Spectroscopic characterization techniques for semiconductor technology III : 14 - 15 March 1988, Newport Beach, California (English)
- New search for: Glembocki, Orest J.
1988
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ISBN:
- Conference Proceedings / Print
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Title:Spectroscopic characterization techniques for semiconductor technology III : 14 - 15 March 1988, Newport Beach, California
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Contributors:
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Conference:Conference ; 1988 ; Newport Beach, Calif.
Symposium on Advances in Semiconductors and Superconductors: Physics and Device Applications -
Published in:
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Publisher:
- New search for: SPIE
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Place of publication:Bellingham, Wash.
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Publication date:1988
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Size:VIII, 234 S
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Remarks:28 cm
Ill., graph. Darst
Includes bibliographies and index -
ISBN:
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Type of media:Conference Proceedings
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Type of material:Print
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Language:English
- New search for: 621.381/52
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Keywords:
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Classification:
DDC: 621.381/52 -
Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Modulation Spectroscopy Of Semiconductor Microstructures: An OverviewPollak, Fred H. / Glembocki, O. J. et al. | 1988
- 36
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Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of ElectromodulationShen, H. / Pan, S. H. / Pollak, Fred H. / Sacks, R. N. et al. | 1988
- 43
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Photoreflectance And The Seraphin Coefficients In Quantum Well StructuresZheng, X. L. / Helman, D. / Lax, B. / Chambers, F. A. et al. | 1988
- 48
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Surface Potential Characterization Of The Photoelectrochemical Etching System By Photoreflectance And Electroreflectance TechniquesWillner, A. E. / Glembocki, O. J. / Podlesnik, D. V. / Palik, E. D. / Osgood, R. M. et al. | 1988
- 57
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Photoreflectance Study of Ion-implanted CdTeAmirtharaj, P. M. / Bowman, R. C. / Alt, R. L. et al. | 1988
- 65
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Optical And Structural Characterization Of Boron Implanted GaAsBowman, R. C. / Jamieson, D. N. / Adams, P. M. / Alt, R. L. et al. | 1988
- 76
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Effective Bandgap Shrinkage Measurement In Silicon Solar Cell By Electro-Reflectance MethodGupta, Tapan K. et al. | 1988
- 84
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Analysis Of Semiconductor Materials And Structures By SpectroellipsometryAspnes, D. E. et al. | 1988
- 98
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Optical Measurement Of Built-In And Applied Electric Fields In AlxGa1-xAs/GaAs HeterostructuresSynder, Paul G. / Merkel, Kenneth G. / Woollam, John A. et al. | 1988
- 105
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GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic EllipsometryMerkel, Kenneth G. / Snyder, Paul G. / Woollam, John A. / Alterovitz, Samuel A. et al. | 1988
- 112
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In Situ Optical Measurements Of The Growth Of GaAs and AlGaAs By Molecular Beam EpitaxyAspnes, D. E. / Harbison, J. P. / Studna, A. A. / Florez, L. T. / Kelly, M. K. et al. | 1988
- 122
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Algorithm For LI Near Gradient Refractive IndicesPotter, Roy F. et al. | 1988
- 129
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Optical Study Of Interface Effects In TCO/Amorphous Semiconductors SystemsDemichelis, F. / Kaniadakis, G. / Tresso, E. / Tagliaferro, A. / Arya, R. R. et al. | 1988
- 136
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Raman Characterization Of Semiconductor SuperlatticesSapriel, J. et al. | 1988
- 146
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Reactive Ion Etching of MBE GaAs: A Raman Scattering StudyRoughani, Bahram / Jbara, Joubran J. / Boyd, Joseph T. / Mantei, Thomas D. / Jackson, Howard E. et al. | 1988
- 150
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Alloy Disorder Effects In Molecular Beam Epitaxically Grown AlxGa1-xAs Examined Via Raman And Rayleigh Scattering And Near Edge LuminescenceLao, Pudong / Tang, Wade C. / Madhukar, A. / Chen, P. et al. | 1988
- 155
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Characterization of MeV iOn-Implanted GainAs/GaAs Using X-Ray And Raman TechniquesWie, Chu R. / Xie, K. / Kim, H. M. / Chen, J. F. / Burns, G. / Dacol, F. H. / Pettit, G. D. / Woodall, J. M. et al. | 1988
- 163
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Strain Distribution Of MBE Grown GexSi1-x/Si Layers by Raman ScatteringChang, S. J. / Kallel, M. A. / Wang, K. L. / Bowman, R. C. / Chow, Peter et al. | 1988
- 169
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Growth-Induced Complex Defects In GaAs Grown By Molecular Beam EpitaxyBeye, A. C. / Neu, G. / Contour, J. P. / Garcia, J. C. / Gil, B. et al. | 1988
- 172
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Photoluminescence Studies Of InGaAlAs Quaternary AlloysJones, Eric D. / Dawson, L.Ralph et al. | 1988
- 177
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The Recombination Mechanism Of Excited-State Acceptor-Acceptor Pairs In GaAsOhnishi, Nobukazu / Makita, Yunosuke / Mori, Masahiko / Phelan, Paul / Irie, Katsuhiro et al. | 1988
- 186
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TEM Characterization of II-VI Compound SemiconductorsSchaake, Herbert F. et al. | 1988
- 195
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Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)Kelly, Nicola / Kaiser, Ulrich et al. | 1988
- 204
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Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon OxidationProkes, S. M. / Glembocki, O. J. / Donovan, E. P. / Stahlbush, R. / Carlos, W. E. / Dietrich, H. / Christou, A. et al. | 1988
- 211
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Scanning Tunneling SpectroscopyBiegelsen, D. K. et al. | 1988
- 219
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Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission StudyCao, Renyu / Miyano, Ken / Chin, K.Ken. / Lindau, Ingolf / Spicer, William E. et al. | 1988
- 227
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Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric FilmsJousse, D. / Kanicki, J. / Stathis, J. / Cros, Y. et al. | 1988