Proceedings - 1991 International Semiconductor Device Research Symposium : December 4 - 6, 1991, Omni Charlottesville Hotel ; [dedicated to the memory of Professor Aldert van der Ziel] (English)
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1991
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ISBN:
- Conference Proceedings / Print
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Title:Proceedings - 1991 International Semiconductor Device Research Symposium : December 4 - 6, 1991, Omni Charlottesville Hotel ; [dedicated to the memory of Professor Aldert van der Ziel]
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Contributors:
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Conference:International Semiconductor Device Research Symposium (ISDRS) ; 1 ; 1991 ; Charlottesville, Va.
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Publisher:
- New search for: Engineering Academic Outreach, University of Virginia
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Place of publication:Charlottesville, VA
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Publication date:1991
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Size:XI, 758, A7 S
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ISBN:
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Type of media:Conference Proceedings
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Type of material:Print
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Language:English
- New search for: 53.56 / 33.72 / 53.51
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 139
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Carrier confinement in SiO2/Si/Ge heterostructure inversion mode MISFETsFountain, G.G. / Hattangady, S.V. / Alley, R.G. / Mantini, M.J. / Markunas, R.J. et al. | 1991
- 155
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Monolithic Si/SiGe millimeter-wave detector circuitsLuy, J.F. / Strohm, K.M. / Büchler, J. et al. | 1991
- 163
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SiGe materials and device applicationsChang, C.Y. et al. | 1991
- 185
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Fabrication and characterization of electrooptic waveguide devices in GaAs/AlGaAsJohannessen, K. / Neegard, S. et al. | 1991
- 201
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Multiple p-n junction laser heterostructures: a new approach in designing optoelectronically triggered lasers and OEICsJain, F. / Chung, C. / Gokhale, M. et al. | 1991
- 271
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Direct synthesis of III-V semiconductor quantum dots and quantum wires by molecular beam epitaxyPloog, K. / Brandt, O. / Nötzel, R. et al. | 1991
- 297
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CBE grown InGaAs/InP hot electron transistor (HET) with Pd/Ge shallow ohmic base contactChen, W.L. / Sun, J.P. / Haddad, G.I. / Sherwin, M.E. / Munns, G.O. / East, J.R. / Mains, R.K. et al. | 1991
- 327
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A novel fabrication technology for optically interconnected three-dimensional LSI by wafer aligning and bonding techniqueTakata, H. / Nakano, T. / Yokoyama, S. / Horiuchi, S. / Itani, H. / Tsukamoto, H. / Koyanagi, M. et al. | 1991
- 335
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Photochemical selective day recess etching for N-InAlAs/InGaAs HEMTsKuroda, Shigeru / Imanishi, Kenji / Harada, Naoki / Hikosaka, Kohki et al. | 1991
- 491
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Field-effect transistors in 6H-silicon carbidePalmour, J.W. / Kong, Hua-Shuang / Carter, C.H. jun. et al. | 1991
- 499
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Bulk and perimeter generation in 6H-SiC diodesCooper, J.A. jun. / Palmour, J.W. / Gardner, C.T. / Melloch, M.R. / Carter, C.H. jun. et al. | 1991
- 621
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Iono-luminescence of diamond and ion implanted light-emitting diodesSullivan, P.A. / Boring, J.W. / Baragiola, R.A. et al. | 1991
- 631
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Boron-doping and electrical characterization of patterned thin diamond films for device applicationsMasood, A. / Aslam, M. / Tamor, M.A. / Potter, T.J. et al. | 1991
- 635
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Technology and characterization of CVD-diamond piezoresistive devicesAslam, M. / Taher, I. / Masood, A. / Tamor, M.A. / Potter, T.J. et al. | 1991
- 653
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Advances in heterostructure-field-effect transistors and their integration for millimeter wave applicationsPavlidis, D. et al. | 1991
- 701
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Heterojunction bipolar transistors: the recent issuesGao, Guang-Bo / Morkoc, H. et al. | 1991
- 729
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Optimization of high-energy ion implanted collector regions for advanced bipolar transistorsRagay, F.W. / Wijburg, R.C. et al. | 1991
- 745
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SiC field effect transistorsKelner, G. / Shur, M. et al. | 1991