2002 International Conference on Molecular Beam Epitaxy : 15 - 20 September 2002, San Francisco, CA (English)
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2002
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ISBN:
- Conference Proceedings / Electronic Resource
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Title:2002 International Conference on Molecular Beam Epitaxy : 15 - 20 September 2002, San Francisco, CA
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Contributors:
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Publisher:
- New search for: IEEE Service Center
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Place of publication:Piscataway, NJ
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Publication date:2002
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Remarks:"IEEE Catalog Number: 02EX607"--Cover
Includes bibliographical references and index -
ISBN:
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Type of media:Conference Proceedings
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Three decades of MBEFoxon, C.T. et al. | 2002
- 5
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Prospects of advanced quantum nano-structures and roles of molecular beam epitaxySakaki, H. et al. | 2002
- 7
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Speculations about future directionsKroemer, H. et al. | 2002
- 9
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MA1.1 Molecular Beam Epitaxy and Properties of Ferromagnetic III-V Semiconductors| 2002
- 9
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Molecular beam epitaxy and properties of ferromagnetic III-V semiconductorsOhno, H. et al. | 2002
- 11
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MA1.2 New Structures for Carrier-Controlled Ferromagnetism in CdMnTe Quantum Wells| 2002
- 11
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New structures for carrier-controlled ferromagnetism in Cd/sub 1-x/Mn/sub x/Te quantum wellsTatarenko, S. / Bertolini, M. / Boukari, H. / Ferrand, D. / Cibert, J. / Gilles, B. / Maslana, W. / Kossacki, P. / Gaj, J.A. et al. | 2002
- 13
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MA1.3 Growth and Characterization of Self-Organized (In,Mn)As Diluted Magnetic Quantum Dots| 2002
- 13
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Growth and characterization of self-organized (In,Mn)As diluted magnetic quantum dotsGhosh, S. / Vurgaftman, I. / Bhattacharya, P. et al. | 2002
- 15
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(In/sub 1-x/Mn/sub x/)As diluted diluted magnetic semiconductor quantum dots with above room ferromagnetic transition temperatureHee Chang Jeon, / Youn Seek Jeong, / Kwang Jae Chung, / Kwang Jo Chung, / Tae Won Kang, / Tae Whan Kim, / Wanho Jhe, / Se Ahn Song, et al. | 2002
- 15
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MA1.4 (In~1~-~xMn~x)As Diluted Magnetic Semiconductor Quantum Dots with Above Room Ferromagnetic Transition Temperature| 2002
- 17
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MA1.5 Properties of Quaternary Alloy Ferromagnetic Semiconductor (InGaMn)As Grown on InP| 2002
- 17
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Properties of quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InPOhya, S. / Yamaguchi, H. / Tanaka, M. et al. | 2002
- 19
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Compliant epitaxial growth of In/sub x/Ga/sub 1-x/As on In/sub 0.25/Ga/sub 0.75/As pseudo-substratesPickrell, G.W. / Xu, C.F. / Chang, K.L. / Hsieh, K.C. / Cheng, K.Y. et al. | 2002
- 19
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MB1.1 Compliant Epitaxial Growth of In~xGa~1~-~xAs on In~0~.~2~5Ga~0~.~7~5As Pseudo-Substrates| 2002
- 21
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MB1.2 Interplays between Plastic Relaxation, Surface Morphology and Composition Modulation in InAlAs Graded Buffer Layers under Various Growth Conditions| 2002
- 21
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Interplays between plastic relaxation, surface morphology and composition modulation in InAlAs graded buffer layers under various growth conditionsChauveau, J.-M. / Cordier, Y. / Ferre, D. / Androussi, Y. / Di Persio, J. et al. | 2002
- 23
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MB1.3 Crosshatch Surface Morphology in Mismatched Films| 2002
- 23
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Crosshatch surface morphology in mismatched filmsAndrews, A.M. / Speck, J.S. et al. | 2002
- 25
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MB1.4 Interface Disorder of In incorporated AlGaAs/GaAs Quantum well grown by Molecular Beam Epitaxy| 2002
- 25
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Interface disorder of In incorporated AlGaAs/GaAs quantum well grown by molecular beam epitaxyWang, W.C. / Chen, H. / Jia, H.Q. / Sang, X.Z. / Huang, Q. / Zhou, J.M. et al. | 2002
- 27
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MB1.5 Mesoscopic Island Structure at GaAs/(AlGa)As Interfaces Grown by MBE| 2002
- 27
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Mesoscopic island structure at GaAs/(AlGa)As interfaces grown by MBEGottwaldt, L. / Pierz, K. / Ahlers, F.J. / Gobel, E.O. / Nau, S. / Torunski, T. / Stolz, W. et al. | 2002
- 29
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Epitaxial growth of 1.55 /spl mu/m emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applicationsSchwertberger, R. / Gold, D. / Reithmaier, J.P. / Forchel, A. et al. | 2002
- 29
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MB1.6 Epitaxial Growth of 1.55 mum Emitting InAs Quantum Dashes on InP-based Heterostructures by GS-MBE for Long-Wavelength Laser Applications| 2002
- 31
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Continuous wave operation of quantum cascade lasersBeck, M. / Hofstetter, D. / Aellen, T. / Faist, J. et al. | 2002
- 31
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MA2.1 Continuous Wave Operation of Quantum Cascade Lasers| 2002
- 33
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Growth of GaAs based quantum cascade lasersStrasser, G. / Schrenk, W. / Anders, S. / Pflugl, C. / Gornik, E. et al. | 2002
- 33
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MA2.2 Growth of GaAs based Quantum Cascade Lasers| 2002
- 35
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Thermal behavior of GaAs/AlGaAs quantum-cascade-lasers: effect of the Al content in the barrier layersOrtiz, V. / Page, H. / Becker, C. / Sirtori, C. et al. | 2002
- 35
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MA2.3 Thermal Behavior of GaAs/AlGaAs Quantum Cascade Lasers: Effect of the Al Content in the Barrier Layers| 2002
- 37
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MBE growth of terahertz quantum cascade semiconductor lasersBeere, H.E. / Linfield, E.H. / Davies, A.G. / Ritchie, D.A. / Kohler, R. / Tredicucci, A. / Beltram, F. / Rochat, M. / Ajili, L. / Willenberg, H. et al. | 2002
- 37
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MA2.4 MBE Growth of Terahertz Quantum Cascade Semiconductor Lasers| 2002
- 39
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MA2.5 InAs-based Quantum Cascade Light Emitting Structures Containing a Double Plasmon Waveguide| 2002
- 39
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InAs-based quantum cascade light emitting structures containing a double plasmon waveguideOhtani, K. / Sakuma, H. / Ohno, H. et al. | 2002
- 41
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MA2.6 Material Engineering for InAs/GaSb/AlSb Quantum Cascade Light Emitting Devices| 2002
- 41
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Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devicesMarcadet, X. / Becker, C. / Prevot, I. / Renard, C. / Sirtori, C. et al. | 2002
- 43
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Gas source MBE growth of TlInGaAs/InP laser diodes and their first successful room temperature operationAsahi, H. / Lee, H.J. / Fujiwara, A. / Zhou, Y.K. et al. | 2002
- 43
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MA2.7 Gas Source MBE Growth of TlInGaAs/InP Laser Diodes and their First Successful Room Temperature Operation| 2002
- 45
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Development of integrated heterostructures on silicon by MBEDroopad, R. / Curless, J.A. / Yu, Z. / Jordan, D.C. / Liang, Y. / Overgaard, C.D. / Li, H. / Eschrich, T. / Craigo, B. / Eisenbeiser, K.W. et al. | 2002
- 45
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MB2.1 Development of Integrated Heterostructures on Silicon by MBE| 2002
- 47
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Advances in high & kappa gate dielectrics for Si and III-V semiconductorsKwo, J. / Hong, M. / Busch, B. / Muller, D.A. / Chabal, Y.J. / Kortan, A.R. / Mannaerts, J.P. / Yang, B. / Ye, P. / Gossmann, H. et al. | 2002
- 47
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MB2.2 Advances in High & Kappa Gate Dielectrics for Si and III-V Semiconductors| 2002
- 49
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Heavy arsenic doping of silicon by molecular beam epitaxyXian Liu, / Qiang Tang, / Kamins, T.I. / Harris, J.S. et al. | 2002
- 49
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MB2.3 Heavy Arsenic Doping of Silicon by Molecular Beam Epitaxy| 2002
- 51
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MB2.4 Si Nanowires Growth Catalyzed by TiSi2 Islands in Gas-Source MBE| 2002
- 51
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Si nanowires growth catalyzed by TiSi/sub 2/ islands in gas-source MBEQiang Tang, / Xian Liu, / Kamins, T. / Solomon, G.S. / Harris, J.S. et al. | 2002
- 53
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Dynamics and surface segregation during GSMBE of Si/sub 1-y/C/sub y/ and Si/sub 1-x-y/Ge/sub x/C/sub y/ on the Si[001] surfacePrice, R.W. / Tok, E.S. / Liu, R. / Wee, A.T.S. / Woods, N.J. / Zhang, J. et al. | 2002
- 53
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MB2.5 Dynamics and Surface Segregation during GSMBE of Si~1~-~yC~y and Si~1~-~x~-~yGe~xC~y on the Si(001) Surface| 2002
- 55
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In-plan self-organized two-dimensional-ordered GeSi islands grown on Si[001] by molecular beam epitaxyPeng, C.S. / Li, Y.K. / Zhou, J.M. et al. | 2002
- 55
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MB2.6 In-Plan Self-Organized Two-Dimensional-Ordered GeSi Islands Grown on Si (001) by Molecular Beam Epitaxy| 2002
- 57
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MB2.7 Ordered Arrays of Rare Earth Silicide Nanowires on Si(001)| 2002
- 57
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Ordered arrays of rare earth silicide nanowires on Si[001]Ragan, R. / Yong Chen, / Ohlberg, D.A.A. / Williams, R.S. et al. | 2002
- 61
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TuA1.2 A 1.5 mum GaInNAs(Sb) Laser Grown on GaAs by MBE| 2002
- 61
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A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBEWonill Ha, / Gambin, V. / Bank, S. / Wistey, M. / Yuen, H. / Goddard, L. / Seongsin Kim, / Harris, J. et al. | 2002
- 63
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TuA1.3 1.3 mum InGaAsN/GaAs Edge Emitting and Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy| 2002
- 63
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1.3 /spl mu/m InGaAsN/GaAs edge emitting and vertical cavity surface emitting lasers grown by molecular beam epitaxyPeng, C.S. / Jouhti, T. / Konttinen, J. / Li, W. / Pessa, M. et al. | 2002
- 65
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1.36 /spl mu/m InGaNAs/GaNAs laser diodes grown by molecular beam epitaxy using an Ar/N/sub 2/ RF plasmaGupta, J.A. / Barrios, P.J. / Wasilewski, Z.R. / Aers, G.C. / Williams, R.L. et al. | 2002
- 65
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TuA1.4 1.36mum InGaNAs/GaNAs Laser Diodes Grown by Molecular Beam Epitaxy using an Ar/N2 RF Plasma| 2002
- 67
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MBE development of dilute nitrides for commercial long-wavelength VCSEL applicationsMalis, O. / Liu, W.K. / Fastenau, J.M. / Pelzel, R. / Evans, K. / Joel, A. / Gong, P. / Bland, S.W. / Moshegov, N. et al. | 2002
- 67
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TuA1.5 MBE Development of Dilute Nitrides for Commercial Long-Wavelength VCSEL Applications| 2002
- 69
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TuB1.1 Properties of Metamorphic Materials and Device Structures on GaAs Substrates| 2002
- 69
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Properties of metamorphic materials and device structures on GaAs substratesHoke, W.E. / Kennedy, T.D. / Torabi, A. / Whelan, C.S. / Marsh, P.F. / Leoni, R.E. / Jang, J.H. / Adesida, I. / Chang, K.L. / Hsieh, K.C. et al. | 2002
- 71
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Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAsCordier, Y. / Lorenzini, P. / Chauveau, J.-M. / Ferre, D. / Androussi, Y. / DiPersio, J. / Vignaud, D. / Codron, J.-L. et al. | 2002
- 71
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TuB1.2 Influence of Growth Conditions on the Structural, Optical and Electrical Quality of MBE Grown InAlAs/InGaAs Metamorphic HEMTs on GaAs| 2002
- 73
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High indium metamorphic HEMT on a GaAs substrateHoke, W.E. / Kennedy, T.D. / Torabi, A. / Whelan, C.S. / Marsh, P.F. / Leoni, R.E. / Xu, C. / Hsieh, K.C. et al. | 2002
- 73
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TuB1.3 High Indium Metamorphic HEMT on a GaAs Substrate| 2002
- 75
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TuB1.4 Interface Roughness Scattering of Electrons in a (411)A In~0~.~5~3Ga~0~.~4~7As/In~0~.~5~2Al~0~.~4~8 As HEMT Structure with Super-Flat Interfaces| 2002
- 75
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Interface roughness scattering of electrons in a [411]A In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMT structure with super-flat interfacesWatanabe, I. / Kanzaki, K. / Kitada, T. / Yamamoto, M. / Shimomura, S. / Hiyamizu, S. et al. | 2002
- 77
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TuB1.5 High Performance of InGaP/InGaAs Enhanced-Mode PHEMT Structures by Gas Source Molecular Beam Epitaxy| 2002
- 77
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High performance of InGaP/InGaAs enhanced-mode PHEMT structures by gas source molecular beam epitaxyLi, A.Z. / Chen, Y.Q. / Chen, J.X. / Liu, X.C. / Chen, J. / Wang, R.M. et al. | 2002
- 79
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TuA2.1 InP-based VCSEL Technology Covering the Wavelength Range from 1.3 to 2.0 mum| 2002
- 79
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InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 /spl mu/mBoehm, G. / Shau, R. / Meyer, R. / Amann, M.-C. / Ortsiefer, M. / Rosskopf, J. / Mederer, F. et al. | 2002
- 81
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TuA2.2 Fabrication of GaAs Laser Diodes on Si using Low Temperature Bonding of MBE Grown GaAs Wafers with Si Wafers| 2002
- 81
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Fabrication of GaAs laser diodes on Si using low temperature bonding of MBE grown GaAs wafers with Si wafersCengher, D. / Hatzopoulos, Z. / Gallis, S. / Deligeorgis, G. / Aperathitis, E. / Alexe, M. / Dragoi, V. / Kyriakis-Bitzaros, E.D. / Halkias, G. / Georgakilas, A. et al. | 2002
- 83
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TuA2.3 A Forbidden Temperature Region for the Growth of Planar Strained InAlGaAs MQW Structures for 1.3mum Lasers| 2002
- 83
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A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 /spl mu/m lasersSpring Thorpe, A.J. / Extavour, M. / Griswold, E.M. / Shen, A. / White, J.K. / Hinzer, K. et al. | 2002
- 85
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Lattice-matched Al/sub 0.95/Ga/sub 0.05/AsSb oxide for current confinement in InP-based long wavelength VCSELsReddy, M.H.M. / Buell, D.A. / Asano, T. / Koda, R. / Freezell, D. / Huntington, A.S. / Coldren, L.A. et al. | 2002
- 85
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TuA2.4 Lattice Matched Al~0~.~9~5Ga~0~.~0~5AsSb Oxide for Current Confinement in InP-based Long Wavelength VCSELs| 2002
- 87
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Size control of self-assembled quantum wires for emission wavelength engineeringGonzalez, L. / Gonzalez, Y. / Granados, D. / Garcia, J.M. / Fuster, D. / Martinez-Pastor, J. et al. | 2002
- 87
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TuA2.5 Size Control of Self-Assembled Quantum Wires for Emission Wavelength Engineering| 2002
- 89
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The effect of (NH/sub 4/)/sub 2/S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectorZhang, X. / Li, A.Z. / Lin, C. / Xu, G.Y. et al. | 2002
- 89
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TuA2.6 The Effect of (NH4)2S Passivation Treatments on the Dark Current-Voltage Characteristics of InGaAsSb PIN Detector| 2002
- 91
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Real-time tracking of InGaAs composition during growth for multi-wafer production MBE using optical-based flux monitor (OFM)Marquis, J. / Hubbard, J. / Dickey, R. / Trevedi, M. / Vargason, K. / Randall Thomason, J. / Xiao-Jun Jin, / Pinsukanjana, P. / Yung-Chung Kao, et al. | 2002
- 91
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TuB2.1 Real-time Tracking of InGaAs Composition during Growth for Multi-Wafer Production MBE using Optical-Based Flux Monitor (OFM)| 2002
- 93
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Multiwafer gas source MBE development for InGaAsP/InP laser productionLelarge, F. / Sanchez, J.J. / Gaborit, F. / Gentner, J.L. et al. | 2002
- 93
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TuB2.2 Multiwafer Gas Source MBE Development For InGaAsP/InP Laser Production| 2002
- 95
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Low current-blocking InGaAs/InP DHBT grown by solid-source MBEShu-Han Chen, / Meng-Lin Lee, / Ming-Yuan Tseng, / Wei-Sheng Liu, / Jen-Inn Chyi, et al. | 2002
- 95
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TuB2.3 Low Current-Blocking InGaAs/InP DHBT Grown by Solid-Source MBE| 2002
- 97
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Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistorsRajavel, R.D. / Hussain, T. / Montes, M.C. / Chow, D.H. et al. | 2002
- 97
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TuB2.4 MBE Growth and Characterization of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors| 2002
- 99
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MBE growth of high quality AlGaN/GaN HEMTs on resistive Si[111] substrate with RF small signal and power performancesCordier, Y. / Semond, F. / Lorenzini, P. / Grandjean, N. / Natali, F. / Damilano, B. / Massies, J. / Hoel, V. / Minko, A. / Vellas, N. et al. | 2002
- 99
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TuB2.5 MBE Growth of High Quality AlGaN/GaN HEMTs on Resistive Si(111) Substrate with RF Small Signal and Power Performances| 2002
- 101
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TuB2.6 Device and Materials Characteristics of MBE-Grown InAs Bipolar Transistors| 2002
- 101
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Device and materials characteristics of MBE-grown InAs bipolar transistorsAverett, K.L. / Wu, X. / Maimon, S. / Koch, M.W. / El-Naggar, A. / Wicks, G.W. et al. | 2002
- 103
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TuA3.1 Control of MBE Surface Step-Edge Kinetics to Make an Atomically Smooth Quantum Well| 2002
- 103
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Control of MBE surface step-edge kinetics to make an atomically smooth quantum wellYoshita, M. / Ji-Won Oh, / Akiyamat, H. / Pfeiffer, L. / Westt, K.W. et al. | 2002
- 105
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TuA3.2 Terrace and Reconstruction Dynamics on the Growing GaAs(001)Surface Studied by Synchrotron X-ray Diffraction| 2002
- 105
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Terrace and reconstruction dynamics on the growing GaAs[001] surface studied by synchrotron X-ray diffractionBraun, W. / Jenichen, B. / Kaganer, V.M. / Shtukenherg, A.G. / Daweritz, L. / Ploog, K.H. et al. | 2002
- 107
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TuA3.3 Some Key Features of the Ga1-xInxAs Surface Reactivity to Phosphorus| 2002
- 107
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Some key features of the Ga/sub 1-x/In/sub x/As surface reactivity to phosphorusWallart, X. / Priester, C. / Deresmes, D. / Mollot, F. et al. | 2002
- 109
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Time-resolved X-ray diffraction study on surface structure and morphology during molecular beam epitaxy growthTakahasi, M. / Yoneda, Y. / Inoue, H. / Yamamoto, N. / Mizuki, J. et al. | 2002
- 109
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TuA3.4 Time-Resolved X-Ray Diffraction Study on Surface Structure and Morphology During Molecular Beam Epitaxy Growth| 2002
- 111
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In situ control of the desorption process of GaAs surface native oxide by direct Ga beam irradiationAsaoka, Y. / Kanebishi, T. / Sano, N. / Kaneko, T. et al. | 2002
- 111
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TuA3.5 In situ Control of the Desorption Process of GaAs Surface Native Oxide by Direct Ga Beam Irradiation| 2002
- 113
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TuA3.6 Ga-Rich GaAs(001) Surfaces Observed by STM during High-Temperature Annealing in MBE| 2002
- 113
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Ga-rich GaAs[001] surfaces observed by STM during high-temperature annealing in MBE chamberTsukamoto, S. / Pristovsek, M. / Ohtake, A. / Orr, B.G. / Bell, G.R. / Ohno, T. / Koguchi, N. et al. | 2002
- 115
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TuB3.1 Growth and Properties of Ferromagnet-Semiconductor Heterostructures for Spin Injection at Room Temperature| 2002
- 115
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Growth and properties of ferromagnet-semiconductor heterostructures for spin injection at room temperaturePloog, K.H. et al. | 2002
- 117
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MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructuresPalmstrom, C.J. / Carr, D.M. / Dong, J.W. / Dong, X. / Lu, J. / Ludge, K. / McKernan, S. / Schultz, B.D. / Shih, T.C. / Xie, J.Q. et al. | 2002
- 117
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TuB3.2 MBE Growth and Interfacial Reaction Control of Ferromagnetic Metal/GaAs Heterostructures| 2002
- 119
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Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact [111]B GaAs substrates: the effect of an ultrathin GaAs buffer layerSugahara, S. / Tanaka, M. et al. | 2002
- 119
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TuB3.3 Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer| 2002
- 121
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TuB3.4 Spin Injection from a Ferromagnetic Electrode into InAs Surface Inversion Layer| 2002
- 121
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Spin injection from a ferromagnetic electrode into InAs surface inversion layerYoh, K. / Ohno, H. / Katano, Y. / Mukasa, K. et al. | 2002
- 123
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Molecular beam epitaxial growth of CdMnSe as a promising material for spin injectionGrabs, P. / Richter, G. / Fiederling, R. / Gould, C. / Becker, C.R. / Schmidt, G. / Molenkamp, L.W. / Weigand, W. / Gleim, T. / Heske, C. et al. | 2002
- 123
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TuB3.5 Molecular Beam Epitaxial Growth of CdMnSe as a Promising Material for Spin Injection| 2002
- 125
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TuP1 Very Shallow Two-dimensional Electron Gas Realized by InxA1-xAs/InAs Single Quantum Well Grown on GaAs(111)A substrate| 2002
- 125
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Very shallow two-dimensional electron gas realized by In/sub x/Al/sub 1-x/As/InAs single quantum well grown on GaAs[111]A substrateGozu, S. / Watanabe, K. / Ishibashi, K. / Aoyagi, Y. et al. | 2002
- 127
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TuP2 Electronic Properties of Etched-Regrown Heterostructure Interfaces| 2002
- 127
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Electronic properties of etched-regrown heterostructure interfacesBeyer, S. / Lohr, S. / Heyn, C. / Heitmann, D. / Hansen, W. et al. | 2002
- 129
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TuP3 Confined Optical Phonons in AlAs/AlP Strained Short-Period Superlattices| 2002
- 129
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Confined optical phonons in AlAs/AlP strained short-period superlatticesNagano, M. / Sugie, R. et al. | 2002
- 131
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TuP4 MBE Growth and Photoluminescence Properties of Strained InAsSb/AlSbAs Quantum Wells| 2002
- 131
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MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wellsSolov'ev, V.A. / Terent'ev, Ya.V. / Toropov, A.A. / Mel'tser, B.Ya. / Semenov, A.N. / Ivanov, S.V. / Kop'ev, P.S. / Meyer, J.R. et al. | 2002
- 133
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TuP5 V-Grooved InGaAs Quantum-Wire FET Fabricated under an As2 Flux in Molecular Beam Epitaxy| 2002
- 133
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V-grooved InGaAs quantum-wire FET fabricated under an As/sub 2/ flux in molecular beam epitaxySugaya, T. / Jang, K.-Y. / Wada, T. / Ogura, M. / Komori, K. et al. | 2002
- 135
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Composition dependence of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxyBeresford, R. / Lynch, C. / Chason, E.A. et al. | 2002
- 135
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TuP6 Composition Dependence of Dislocation-Mediated Strain Relaxation in InGaAs/GaAs Heteroepitaxy| 2002
- 137
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Theoretical study of In surface kinetics during MBE growth of InGaAs and InGaNStanley, I. / Coleiny, G. / Venkat, R. et al. | 2002
- 137
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TuP7 Theoretical Study of In Surface Kinetics during MBE Growth of InGaAs and InGaN| 2002
- 139
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Improvement of crystal quality of cubic GaN film using AlN/GaN ordered alloy on GaAs[100] by plasma assisted molecular beam epitaxyKimura, R. / Shigemori, A. / Shike, J. / Ohuchi, M. / Ishida, K. / Takahashi, K. et al. | 2002
- 139
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TuP8 Improvement of Crystal Quality of Cubic GaN Film Using AlN/GaN Ordered Alloy on GaAs (100)| 2002
- 141
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Control of the polarity of GaN epilayers using a Mg adsorption layerGrandjean, N. / Talent, M.-L. / Dussaigne, A. / Vennegues, P. / Tournie, E. et al. | 2002
- 141
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TuP9 Control of the Polarity of GaN Epilayers using a Mg Adsorption Layer| 2002
- 143
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TuP10 MOMBE Growth Studies of GaN using Metalorganic Sources and N or NH~3| 2002
- 143
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MOMBE growth studies of GaN using metalorganic sources and N or NH/sub 3/Li, T. / Campion, R.P. / Foxon, C.T. / Rushworth, S. / Smith, L. et al. | 2002
- 145
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Critical thickness of GaAs/sub (1-x)/N/sub x/ and In/sub y/Ga/sub (1-y)/As/sub (1-x)/N/sub x/ MQW structuresMussler, G. / Ploog, K.H. et al. | 2002
- 145
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TuP11 Critical Thickness of GaAs~(~1~-~x~)N~(~x~) and In~(~y~)Ga~(~1~-~y~) As~(~1~-~x~)N~(~x~) MQW Structures| 2002
- 147
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TuP12 RF-MBE Growth of InAsN layers on GaAs (001) Substrates using a Thick InAs Buffer Layer| 2002
- 147
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RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layerSusurnuNishio, / Nishikawa, A. / Katayama, R. / Onabe, K. / Shhki, Y. et al. | 2002
- 149
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MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]Nishikawa, A. / Katayama, R. / Onabe, K. / Shiraki, Y. et al. | 2002
- 149
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TuP13 MBE Growth and Photoreflectance Study of GaAsN Alloy Films Grown on GaAs (001)| 2002
- 151
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Indium surface segregation in InGaN/GaN quantum wellsDussaigne, A. / Damilano, B. / Grandjean, N. / Massies, J. et al. | 2002
- 151
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TuP14 Indium Surface Segregation in InGaN/GaN Quantum Wells| 2002
- 153
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Optimisation of growth parameters for photonic crystal structuresAtkinson, P. / Johnston, M.B. / Beere, H.E. / Ritchie, D.A. et al. | 2002
- 153
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TuP15 Optimisation of Growth Parameters for Photonic Crystal Structures| 2002
- 155
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TuP16 Nanofabrication of Heavily Carbon Doped p-Type GaAs by Atomic Force Microscope Nano-Oxidation Process and Its Application to Single Hole Transistors| 2002
- 155
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Nanofabrication of heavily carbon doped p-type GaAs by atomic force microscope nano-oxidation process and its application to single hole transistorsMatsuzaki, Y. / Yamada, A. / Konagai, M. et al. | 2002
- 157
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TuP17 Scanning Tunneling Microscopy Study of GaAs Overgrowth on InAs Islands Formed on GaAs(001)| 2002
- 157
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Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs[001]Hasegawa, S. / Suekane, O. / Takata, M. / Nakashima, H. et al. | 2002
- 159
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Accuracy of AlGaAs growth rates and composition determination using RHEED oscillationsHarvey, T.E. / Bertness, K.A. / Wang, C.M. / Splett, J.D. et al. | 2002
- 159
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TuP18 Accuracy of AlGaAs Growth Rates and Composition Determination using RHEED Oscillations| 2002
- 161
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TuP19 Real-Time Investigation of In Segregation by RHEED Measurements during MBE Growth of InGaAs on GaAs(001)| 2002
- 161
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Real-time investigation of In segregation by RHEED measurements during MBE growth of InGaAs on GaAs[001]Martini, S. / Lamas, T.E. / Quivy, A.A. / da Silva, E.C.F. / Leite, J.R. et al. | 2002
- 163
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Arsenic pressure dependence of surface migration length of As/sub 4/ molecules during molecular beam epitaxy of GaAsP on [411]A GaAs substrateHiguchi, Y. / Uemura, M. / Tatsuoka, Y. / Kitada, T. / Shimomura, S. / Hiyamizu, S. et al. | 2002
- 163
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TuP20 Arsenic Pressure Dependence of Surface Migration Length of As4 Molecules during Molecular Beam Epitaxy of GaAsP on (411)A GaAs Substrate| 2002
- 165
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A simple model for MBE growth controlled by group III atom migrationHolland, M.C. et al. | 2002
- 165
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TuP21 A Simple Model for MBE Growth Controlled by Group III Atom Migration| 2002
- 167
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TuP22 Selective Growth of GaAs and Associated Faceting and Lateral Overgrowth on Nanoscale SiO~2-patterned GaAs(100) by Molecular Beam Epitaxy| 2002
- 167
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Selective growth of GaAs and associated faceting and lateral overgrowth on nanoscale SiO/sub 2/-patterned GaAs[100] by molecular beam epitaxyLee, S.C. / Malloy, K.J. / Dawson, L.R. / Brueck, S.R.J. et al. | 2002
- 167
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Selective growth of GaAs and associated faceting and lateral overgrowth on nanoscale SiO2-patterned GaAs(100) by molecular beam epitaxyLee, S.C. / Malloy, K.J. / Dawson, L.R. / Brueck, S.R.J. et al. | 2002
- 169
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Real-time assessment of In surface segregation during the MBE growth of AlSb/InAs(Sb) heterostructuresPrevot, I. / Marcadet, X. / Renard, C. / Massies, J. et al. | 2002
- 169
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TuP23 Real-time Assessment of In Surface Segregation during the MBE Growth of AlSb/InAs(Sb) Heterostructures| 2002
- 171
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TuP24 Effects of Noise Level in Fitting In-Situ Optical Reflectance Spectroscopy Data| 2002
- 171
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Effects of noise level in fitting in-situ optical reflectance spectroscopy dataChihchiang Fu, / Bertness, K.A. / Wang, C.M. et al. | 2002
- 173
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TuP25 Experimental Extract and Experienced Formulas of Refractive Indices of GaAs and AlAs at High Temperature by High Resolution X-ray Diffraction and Optical Reflectivity Measurement| 2002
- 173
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Experimental extract and experienced formulas of refractive indices of GaAs and AlAs at high temperature by high resolution x-ray diffraction and optical reflectivity measurementZhang, B.Y. / Solomon, G. / Weihs, G. / Yamamoto, Y. et al. | 2002
- 175
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InAs/AlGaSb heterostructure stress sensor for MEMS/NEMS applicationsYamaguchi, H. / Miyashita, S. / Hirayama, Y. et al. | 2002
- 175
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TuP26 InAs/AlGaSb Heterostructure Stress Sensor for MEMS/NEMS Applications| 2002
- 177
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TuP27 Improvement of Wet Oxidized AlAs through the use of the In~0~.~0~5AlAs/AlAs/In~0~.~0~5AlAs Sandwich Structure| 2002
- 177
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Improvement of wet oxidized AlAs through the use of the In/sub 0.05/AlAs/AlAs/In/sub 0.05/AlAs sandwich structureWang, W.C. / Chen, H. / Jia, H.Q. / Li, W. / Huang, Q. / Zhou, J.M. et al. | 2002
- 179
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Reveal the threading dislocation pits of AlGaAs related epitaxial layer by wet oxidationPeng, C.S. / Jouhti, T. / Konttinen, J. / Pessa, M. et al. | 2002
- 179
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TuP28 Reveal the Threading Dislocation Pits of AlGaAs Related Epitaxial Layer by Wet Oxidation| 2002
- 181
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Antimony segregation in the oxidation of strained AlAsSb interlayersAndrews, A.M. / Speck, J.S. et al. | 2002
- 181
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TuP29 Antimony Segregation in the Oxidation of Strained AlAsSb Interlayers| 2002
- 183
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TuP30 Controlled n-type Doping of Antimonide/Arsenide Heterostructures using GaTe| 2002
- 183
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Controlled n-type doping of antimonide/arsenide heterostructures using GaTeBennett, B.R. / Magno, R. / Ikossi, K. / Papanicolaou, N. / Boos, J.B. / Shanabrook, B.V. et al. | 2002
- 185
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Growth of shallow InAs HEMTs with metamorphic bufferHeyn, C. / Mendach, S. / Schnull, S. / Lohr, S. / Beyer, S. / Hansen, W. et al. | 2002
- 185
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TuP31 Growth of Shallow InAs HEMTs with Metamorphic Buffer| 2002
- 187
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TuP32 Impact of Metal/Oxide Interface on DC and RF Performance of D-mode GaAs MOSFET Employing MBE Grown Ga~2O~3(Gd~2O~3) as Gate Dielectric| 2002
- 187
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Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectricYang, B. / Ye, P.D. / Kwo, J. / Frei, M.R. / Gossmann, H.-J.L. / Mannaerts, J.P. / Sergent, M. / Hong, M. / Ng, K. / Bude, J. et al. | 2002
- 189
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A study of defects in AlGaN/GaN heterostructuresNa, J.H. / Lee, H.S. / Jeon, H.C. / Jeong, Y.S. / Park, C.J. / Park, Y.S. / Cho, H.Y. / Kang, T.W. / Oh, J.E. / Chung, K.S. et al. | 2002
- 189
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TuP33 A Study of Defects in AlGaN/GaN Heterostructures| 2002
- 191
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ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxyOgata, K. / Koike, K. / Tanite, T. / Komuro, T. / Yan, F. / Sasa, S. / Inoue, M. / Yano, M. et al. | 2002
- 191
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TuP35 ZnO and ZnMgO Growth on a-Plane Sapphire by Molecular Beam Epitaxy| 2002
- 195
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WA1.1 Modulated Beam Growth and Interface Control in III-AsSb Laser Heterostructures| 2002
- 195
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Modulated beam growth and interface control in III-AsSb laser heterostructuresKaspi, R. / Ongstad, A.P. / Dente, G.C. / Weimer, M. et al. | 2002
- 197
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Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emissionJohnson, S.R. / Guo, C.Z. / Chaparro, S. / Sadofyev, Yu.G. / Wang, J. / Cao, Y. / Samal, N. / Navarro, C. / Xu, J. / Yu, S.Q. et al. | 2002
- 197
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WA1.2 Band Alignment Determination of MBE Grown GaAsSb on GaAs with 1300 nm Emission| 2002
- 199
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The effect of as incorporation on phase separation in GaAs/GaSb short period superlatticesDorin, C. / Wauchope, C. / Mirecki Millunchick, J. et al. | 2002
- 199
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WA1.3 The Effect of As Incorporation on Phase Separation in GaAs/GaSb Short Period Superlattices| 2002
- 201
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WA1.4 Structure and Composition of (GaIn)(NAsSb)/GaAs Multi Quantum Well Structures Grown by MBE| 2002
- 201
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Structure and composition of (GaIn)(NAsSb)/GaAs multi quantum well structures grown by MBEVolz, K. / Gambin, V. / Ha, W. / Wistey, M. / Harris, J.S. et al. | 2002
- 203
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Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometryAverbeck, R. / Koblmueller, G. / Riechert, H. / Pongratz, P. et al. | 2002
- 203
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WB1.1 Nucleation and Growth of GaN Observed by in situ Line-of-Sight Mass Spectrometry| 2002
- 205
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Reduction of defects in RF-MBE grown GaN on sapphire by optimization of nitridation temperature and intermediate layer parametersBoney, C. / Carreno, A. / Bensaoula, A. / Zhang, Z. / Lee, H.D. / Chu, W.K. / Vigliante, A. et al. | 2002
- 205
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WB1.2 Reduction of Defects in RF-MBE Grown GaN on Sapphire by Optimization of Nitridation Temperature and Intermediate Layer Parameters| 2002
- 207
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Single-crystal zincblende GaN growth on GaP[100] substrate in molecular beam epitaxyMin-Ho Kim, / Juang, F.S. / Hong, Y.G. / Tu, C.W. / Seong-Ju Park, et al. | 2002
- 207
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WB1.3 Single-Crystal Zincblende GaN Growth on GaP(100) Substrate in Molecular Beam Epitaxy| 2002
- 209
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Arsenic incorporation in GaN during growth by molecular beam epitaxyFoxon, C.T. / Novikov, S.V. / Li, T. / Campion, R.P. / Winser, A.J. / Harrison, I. et al. | 2002
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WB1.4 Arsenic Incorporation in GaN during Growth by Molecular Beam Epitaxy| 2002
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Strong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxyJuang, F.S. / Hong, Y.G. / Kim, M.H. / Simpkins, B. / Tu, C.W. / Tsai, J. / Lai, W.C. et al. | 2002
- 211
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WB1.5 Strong Blue Emission from Isoelectronically P-Doped GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy| 2002
- 213
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Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescenceGeorgakilas, / Dimakis, E. / Androulidaki, M. / Tsagaraki, K. / Kittler, G. / Bellet-Almaric, E. / Jalabert, D. / Pelekanos, N.T. et al. | 2002
- 213
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WB1.6 Plasma-Assisted MBE Growth of Quaternary InAlGaN Quantum Well Heterostructures with Room Temperature Luminescence| 2002
- 215
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Influence of growth interruptions at AlSb/InAs interfaces on the atomic morphology and electron transport propertiesSigmund, J. / Saglam, M. / Hartnagel, H.L. / Miehe, G. / Fuess, H. et al. | 2002
- 215
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WA2.1 Influence of Growth Interruptions at AlSb/InAs Interfaces on the Atomic Morphology and Electron Transport Properties| 2002
- 217
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WA2.2 Structure Stability of Short-Period InAs/AlSb Superlattice| 2002
- 217
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Structure stability of short-period InAs/AlSb superlatticesXu, D.P. / Litvinchuk, A. / Delaney, A. / Wang, X. / Le, H. / Pei, S.S. et al. | 2002
- 219
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Transportation phenomena of Sn-doped InSb thin films and application to Hall elementOkamoto, A. / Shibasaki, I. et al. | 2002
- 219
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WA2.3 Transportation Phenomena of Sn-Doped InSb Thin Films and Application to Hall Element| 2002
- 221
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WA2.4 Anisotropic Structural and Electronic Properties of InSb/AlInSb Quantum Wells Grown on GaAs (001) Substrates| 2002
- 221
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Anisotropic structural and electronic properties of InSb/AlInSb quantum wells grown on GaAs [001] substratesMishima, T.D. / Keay, J.C. / Goel, N. / Ball, M.A. / Chung, S.J. / Johnson, M.B. / Santos, M.B. et al. | 2002
- 223
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WA2.5 Regrowth of InAs on the Sides of In-situ Etched InAs/AlSb Superlattice Structures| 2002
- 223
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Regrowth of InAs on the sides of in-situ etched InAs/AlSb superlatticesKolasa, B. / Savvidis, P. / Ulrichs, E. / Allen, S.J. / Chow, D. / Daniel, E. et al. | 2002
- 225
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WB2.1 Polarity Control of GaN/AlGaN/GaN Heterostructure Grown by Molecular Beam Epitaxy| 2002
- 225
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Polarity control of GaN/AlGaN/GaN heterostructure grown by molecular beam epitaxyPark, Y.S. / Lee, H.S. / Na, J.H. / Kim, H.J. / Oh, C.S. / Kang, T.W. / Oh, J.E. et al. | 2002
- 227
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Homoepitaxial growth of GaN/(In,Ga,Al)N MQWs on M-GaN (non-polar) and C-GaN (polar) substratesBhattacharyya, A. / Friel, I. / Moustakas, T.D. / Maruska, H.-P. / Hill, D.W. / Gallagher, J.J. / Chou, M.M.C. / Chai, B. et al. | 2002
- 227
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WB2.2 Homoepitaxial Growth of GaN/(In,Ga,Al)N MQWs on M-GaN (non-polar) and C-GaN (polar) Substrates| 2002
- 229
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WB2.3 Non-Polar III-Nitride Heterostructures| 2002
- 229
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Non-polar III-nitride heterostructuresNg, H.M. et al. | 2002
- 231
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Comparison of high mobility AlGaN/GaN heterostructures grown by MBE on HVPE GaN templates and directly nucleated on sapphireManfra, M.J. / Weimann, N.G. / Hsu, J.W.P. / Pfeiffer, L.N. / West, K.W. / Molnar, R.J. et al. | 2002
- 231
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WB2.4 Comparison of High Mobility AlGaN/GaN Heterostructures Grown by MBE on HVPE GaN Templates and Directly Nucleated on Sapphire| 2002
- 233
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WB2.5 Molecular Beam Epitaxy of Beryllium-doped GaN Buffer Layers for AlGaN/GaN HEMTs| 2002
- 233
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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTsKatzer, D.S. / Storm, D.F. / Binari, S.C. / Roussos, J.A. / Shanabrook, B.V. / Glaser, E.R. et al. | 2002
- 235
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WB2.6 Plasma-Assisted MBE Growth of InN Film and InAlN/InN Heterostructure| 2002
- 235
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Plasma-assisted MBE growth of InN film and InAlN/InN heterostructureHigashiwaki, M. / Matsui, T. et al. | 2002
- 237
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WA3.1 InAs/InGaAs/GaAs Quantum Dot Lasers of 1.3 mum Range with Enhanced Optical Gain| 2002
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InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with enhanced optical gainKovsh, A.R. / Maleev, N.A. / Zhukov, A.E. / Mikhrin, S.S. / Vasil'ev, A.P. / Shernyakov, Yu.M. / Maximov, M.V. / Livshits, D.A. / Ustinov, V.M. / Alferov, Zh.I. et al. | 2002
- 239
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GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laserLiu, H.Y. / Airey, R.J. / Steer, M.J. / Houston, P.A. / Sellers, I.R. / Mowbray, D.J. et al. | 2002
- 239
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WA3.2 GaAs-based Red-Emitting InAlAs/AlGaAs Quantum Dots and Quantum-Dot Laser| 2002
- 241
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Improved performance of MBE grown quantum dot lasers with asymmetric dots in a well design emitting near 1.3 /spl mu/mKrebs, R. / Deubert, S. / Reithmaier, J.P. / Forchel, A. et al. | 2002
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WA3.3 Improved Performance of MBE Grown Quantum Dot Lasers with Asymmetric Dots in a Well Design Emitting Near 1.3 mum| 2002
- 243
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WA3.4 Single Optical Mode - Spontaneous Emission Coupling of a Quantum Dot in a Three-Dimensional Microcavity| 2002
- 243
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Single optical mode-spontaneous emission coupling of a quantum dot in a three-dimensional microcavitySolomon, G.S. / Pelton, M. / Vuckovic, J. / Yamamoto, Y. et al. | 2002
- 245
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WA3.5 Room Temperature 1.3mum Emission from Self-Assembled GaAs/GaSb Quantum Dots| 2002
- 245
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Room temperature 1.3 /spl mu/m emission from self-assembled GaAs/GaSb quantum dotsFarrer, I. / Murphy, M.J. / Thompson, R.M. / Beattie, N.S. / Ritchie, D.A. / Shields, A.J. et al. | 2002
- 247
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Normal incidence, long-wave infrared InAs/In/sub 0.15/Ga/sub 0.85/As dots-in-well detectors grown by molecular beam epitaxyKrishna, S. / Raghavan, S. / Rotella, P. / Fuchs, B. / Stintz, A. / Morath, C. / Dang Le, / Kennerly, S.W. et al. | 2002
- 247
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WA3.6 Normal Incidence, Long-Wave Infrared InAs/In~0~.~1~5Ga~0~.~8~5As Dots-in-Well Detectors Grown by Molecular Beam Epitaxy| 2002
- 249
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Optimizing features of LT-GaAs/AlGaAs Stark geometry photorefractive devicesHan, Y.J. / Guo, L.W. / Bao, C.L. / Huang, Q. / Zhou, J.M. et al. | 2002
- 249
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WA3.7 Optimizing Features of LT-GaAs/AlGaAs Stark Geometry Photorefarctive Devices| 2002
- 251
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In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBEBadano, G. / Zhao, J. / Sivananthan, S. / Aoki, T. / Smith, D. et al. | 2002
- 251
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WB3.1 In-situ Ellipsometric Characterization of Nucleation Conditions of HgCdTe Grown by MBE| 2002
- 253
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Natural ordering of ZnO/sub 1-x/Se/sub x/ grown by radical source MBEIwata, K. / Yamada, A. / Fons, P. / Matsubara, K. / Niki, S. et al. | 2002
- 253
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WB3.2 Natural Ordering of ZnOSe Grown by Radical Source MBE| 2002
- 255
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WB3.3 PL Characteristics of MBE-Grown, Pb-Doped ZnSe Crystal Layers| 2002
- 255
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PL characteristics of MBE-grown, Pb-doped ZnSe crystal layersMita, Y. / Inoue, M. / Sasaki, S. / Kuronuma, R. / Maruyama, S. et al. | 2002
- 257
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WB3.4 Growth and Characterisation of MgS/CdSe Self-Assembled Quantum Dots| 2002
- 257
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Growth and characterisation of MgS/CdSe self-assembled quantum dotsBradford, C. / Urbaszek, B. / Funato, M. / Balocchi, A. / Graham, T.C.M. / McGhee, E.J. / Warburton, R.J. / Prior, K.A. / Cavenett, B. et al. | 2002
- 259
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WB3.5 Growth and Characterisation of CdSe:Mn Quantum Dots| 2002
- 259
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Growth and characterisation of CdSe:Mn quantum dotsTang, X. / Urbaszek, B. / Graham, T.C.M. / Warburton, R.J. / Prior, K.A. / Cavenett, B.C. et al. | 2002
- 261
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WB3.6 Growth of Zinc Blende MnS and MnS Heterostructures by MBE using ZnS as a Sulphur Source| 2002
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Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulphur sourceDavid, L. / Bradford, C. / Tang, X. / Graham, T.C.M. / Prior, K.A. / Cavenett, B.C. et al. | 2002
- 265
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ThA1.1 Correlations between Growth Mode and Structural and Optical Properties of GaInNAs Quantum Wells Grown by MBE| 2002
- 265
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Correlations between growth mode and structural and optical properties of GaInNAs quantum wells grown by MBEChauveau, J.-M. / Trampert, A. / Tournie, E. / Pinault, M.-A. / Ploog, K.H. et al. | 2002
- 267
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ThA1.2 A Study and Control of Lattice Sites of N and Ga/In/N Interdiffusion in Dilute Nitride Quantum Wells| 2002
- 267
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A study and control of lattice sites of N and Ga/In/N interdiffusion in dilute nitride quantum wellsPeng, C.S. / Jouhti, T. / Pavelescu, E.-M. / Pessa, M. et al. | 2002
- 269
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ThA1.3 Valence Band Structure of GaAsN Compounds and Band-Edge Line-Up in GaAs/GaAsN/InGaAs Hetorosructures| 2002
- 269
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Valence band structure of GaAsN compounds and band-edge line-up in GaAs/GaAsN/InGaAs heterostructuresEgorov, A.Yu. / Odnobludov, V.A. / Zhukov, A.E. / Tsatsul'nikov, A.F. / Krizhanovskaya, N.V. / Ustinov, V.M. / Hong, Y.G. / Tu, C.W. et al. | 2002
- 271
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ThA1.4 Growth of GaInNAs by Atomic Hydrogen-Assisted RF-MBE| 2002
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Growth of GaInNAs by atomic hydrogen-assisted RF-MBEOhmae, A. / Matsumoto, N. / Okada, Y. et al. | 2002
- 273
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High intensity 1.3-1.6/spl mu/m luminescence from MBE grown GaInNAsSbGambin, V. / Wonill Ha, / Wistey, M. / Bank, S. / Homan Yuen, / Harris, J. / Seongsin Kim, / Chamberlin, D. / Rosner, J. et al. | 2002
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ThA1.5 High Intensity 1.3-1.6mum Luminescence from MBE Grown GaInNAsSb| 2002
- 275
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Surfactant enhanced growth of GaNAs and InGaNAs using a Bi fluxAdamcyk, M. / Ballestad, A. / Schmid, J.H. / Tiedje, T. / Tixier, S. / Young, E.C. / Fink, V. / Kavanagh, K.L. / Koveshnikov, A. et al. | 2002
- 275
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ThA1.6 Surfactant Enhanced Growth of GaNAs and InGaNAs using a Bi Flux| 2002
- 277
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ThB1.1 Improved Uniformity of Self-Organized In~0~.~5~3Ga~0~.~4~7As/In~0~.~5~2Al~0~.~4~8As Quantum Wires Grown on (775)B-Oriented InP Substrate by Molecular Beam Epitaxy| 2002
- 277
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Improved uniformity of self-organized In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxyOhno, Y. / Shimomura, S. / Hiyamizu, S. et al. | 2002
- 279
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Role of annealing process on formation of self-organized InGaAs quantum wires on GaAs [100]Mano, T. / Notzel, R. / Hamhuis, G.J. / Eijkemans, T.J. / Wolter, J.H. et al. | 2002
- 279
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ThB1.2 Role of Annealing Process on Formation of Self-Organized InGaAs Quantum Wires on GaAs (100)| 2002
- 281
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Selective manipulation of self-assembled quantum dot electronic states via use of a lateral potential confinement layerEui-Tae Kim, / Zhonghui Chen, / Madhukar, A. et al. | 2002
- 281
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ThB1.3 Selective Manipulation of Self-Assembled Quantum Dot Electronic States via use of a Lateral Potential Confinement Layer| 2002
- 283
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ThB1.4 Desorption of InAs Quantum Dots| 2002
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Desorption of InAs quantum dotsHeyn, C. / Beyer, S. / Hansen, W. et al. | 2002
- 285
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ThB1.5 Influence of Thin GaAs and AlAs Cap Layers on the Structural Properties of InAs Quantum Dots Grown by Molecular Beam Epitaxy| 2002
- 285
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Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxyFerdos, F. / Shumin Wang, / Yongqiang Wei, / Larsson, A. / Sadeghi, M. / Qingxiang Zhao, et al. | 2002
- 287
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Customized nanostructures MBE growth: from quantum dots to quantum ringsGranados, D. / Gonzalez, L. / Gonzalez, Y. / Garcia, J.M. et al. | 2002
- 287
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ThB1.6 Customized Nanostructures MBE Growth: From Quantum Dots to Quantum Rings| 2002
- 289
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ThA2.1 Detailed Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs Quantum Wells Emitting Near 1.3mum Wavelength| 2002
- 289
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Detailed comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting near 1.3 /spl mu/m wavelengthLi, L.H. / Harmand, J.C. / Patriarche, G. / Lemaitre, A. / Largeau, L. / Travers, L. et al. | 2002
- 291
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ThA2.2 A Comparison of MBE- and MOCVD-Grown InGaAsN| 2002
- 291
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A comparison of MBE- and MOCVD-grown InGaAsNPtak, A.J. / Friedman, D.J. / Johnston, S.W. et al. | 2002
- 293
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Growth temperature and nitrogen composition dependence of growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxyMakino, S. / Miyamoto, T. / Ohta, M. / Kageyama, T. / Ikenaga, Y. / Koyama, F. / Iga, K. et al. | 2002
- 293
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ThA2.3 Growth Temperature and Nitrogen Composition Dependence of Growth Characteristics of GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy| 2002
- 295
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ThA2.4 InAs/InGaAsN Quantum Dots Emitting at 1.55 Micron Grown by Molecular Beam Epitaxy| 2002
- 295
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InAs/InGaAsN quantum dots emitting at 1.55 micron grown by molecular beam epitaxyUstinov, V.M. / Egorov, A.Yu. / Odnoblyudov, V.A. / Kryzhanovskaya, N.V. / Tsatsul'nikov, A.F. / Alferov, Zh.I. et al. | 2002
- 297
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Improvement of crystalline quality of GaAs/sub y/P/sub 1-x-y/N/sub x/ layers with high nitrogen compositions by low-temperature growth under atomic hydrogen irradiationMomose, K. / Yonezu, H. / Furukawa, Y. / Utsumi, A. / Shinohara, S. et al. | 2002
- 297
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ThA2.5 Improvement of Crystalline Quality of GaAs~yP~1~-~x~-~yN~x Layers with High Nitrogen Compositions by Low-Temperature Growth under Atomic Hydrogen Irradiation| 2002
- 299
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Growth and characterization of GaInNP grown on GaAs substratesHong, Y.G. / Juang, F.S. / Kim, M.H. / Tu, C.W. et al. | 2002
- 299
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ThA2.6 Growth and Characterization of GaInNP Grown on GaAs Substrates| 2002
- 301
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ThB2.1 Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 mum Quantum Dot Laser| 2002
- 301
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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 /spl mu/m quantum dot laserParanthoen, C. / Platz, C. / Moreau, G. / Bertru, N. / Dehaese, O. / Le Corre, A. / Miska, P. / Even, J. / Folliot, H. / Labbe, C. et al. | 2002
- 303
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ThB2.2 The Role of Stress Anisotropy in Quantum Wire and Quantum Dot Formation| 2002
- 303
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The role of stress anisotropy in quantum wire and quantum dot formationSilveira, J.P. / Gonzalez, M.U. / Garcia, J.M. / Gonzalez, L. / Gonzalez, Y. / Briones, F. et al. | 2002
- 305
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ThB2.3 Characteristics of InAs "Dots-in-a-Graded-Well"| 2002
- 305
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Characteristics of InAs "dots-in-a-graded-well"Chen, L. / Pal, D. / Towe, E. et al. | 2002
- 307
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ThB2.4 Growth and Microstructure of Semi-Metallic ErAs Particles Embedded in an In~0~.~5~3Ga~0~.~4~7As Matrix| 2002
- 307
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Growth and microstructure of semi-metallic ErAs particles embedded in an In/sub 0.53/Ga/sub 0.47/As matrixDriscoll, D.C. / Hanson, M.P. / Muller, E. / Gossard, A.C. et al. | 2002
- 309
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ThB2.5 Nucleation and Growth of InAs Quantum Dots on GaAs(001)| 2002
- 309
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Nucleation and growth of InAs quantum dots on GaAs[001]Jones, T.S. / Krzyzewski, T.J. / Joyce, P.B. / Bell, G.R. et al. | 2002
- 311
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Low-temperature growth of self-assembled InAs dots on GaAs by MBEZhan, H.H. / Notzel, R. / Hamhuis, G.J. / Eijkemans, T.J. / Wolter, J.H. et al. | 2002
- 311
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ThB2.6 Low-Temperature Growth of Self-Assembled InAs Dots on GaAs by MBE| 2002
- 313
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ThA3.1 Molecular Beam Epitaxial Growth of Ordered GaAs Nanodot Arrays using Anodic Alumina Masks| 2002
- 313
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Molecular beam epitaxial growth of ordered GaAs nanodot arrays using anodic alumina masksXiangyang Mei, / Blumin, M. / Kim, D. / Zhanghua Wu, / Ruda, H.E. et al. | 2002
- 315
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ThA3.2 Self-Assembled Nanoholes by Molecular Beam Epitaxial Growth and Atomically Precise in situ Etching| 2002
- 315
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Self-assembled nanoholes by molecular beam epitaxial growth and atomically precise in situ etchingKiravittaya, S. / Songmuang, R. / Schmidt, O.G. / Panyakeow, S. et al. | 2002
- 317
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The use of surface oxide and MBE-grown multi-layers as an inorganic resist for nano-patterningAsaoka, Y. / Arai, T. / Sano, N. / Kaneko, T. et al. | 2002
- 317
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ThA3.3 The Use of Surface Oxide and MBE-Grown Multi-Layers as an Inorganic Resist for Nano-Patterning| 2002
- 319
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ThA3.4 Application of Multistep Formation during Molecular Beam Epitaxy for Fabricating Novel Nanomechanical Structures| 2002
- 319
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Application of multistep formation during molecular beam epitaxy for fabricating novel nanomechanical structuresYamaguchi, H. / Hirayama, Y. et al. | 2002
- 321
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ThA3.5 Strain-Driven (In,Ga)As Growth Instability on GaAs (311)A and (311)B: Self-Organization of Template for InAs Quantum Dot Nucleation Control| 2002
- 321
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Strain-driven (In,Ga)As growth instability on GaAs [311]A and [311]B: self-organization of template for InAs quantum dot nucleation controlGong, Q. / Notzel, R. / Wolter, J.H. et al. | 2002
- 323
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ThA3.6 Etched Mesa Sidewalls: Do They affect Growth on Pre-Patterned GaAs(001) Substrates?| 2002
- 323
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Etched mesa sidewalls: do they affect growth on pre-patterned GaAs[001] substrates?Chandrinou, C. / Williams, R.S. / Ashwin, M.J. / Neave, J.H. / Jones, T.S. et al. | 2002
- 325
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ThP1 Initial Stages of CaF~2 Growth and Wetting Layer Formation on Si(001)| 2002
- 325
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Initial stages of CaF/sub 2/ growth and wetting layer formation on Si[001]Sokolov, N.S. / Suturin, S.M. / Ulin, V.P. / Pasquali, L. / Selvaggi, G. / Nannarone, S. et al. | 2002
- 327
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ThP2 Doping of Aacceptor Impurities into ZnO| 2002
- 327
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Doping of acceptor impurities into ZnOHang-Ju Ko, / Setiawan, A. / Harada, C. / Suzuki, T. / Yao, T. et al. | 2002
- 329
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Dynamics of spontaneous roughening on the GaAs[001] surfaceThibado, P.M. / LaBella, V.P. / Bullock, D.W. / Ding, Z. et al. | 2002
- 329
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ThP3 Dynamics of Spontaneous Roughening on the GaAs(001) Surface| 2002
- 331
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MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr/sub 1-x/Sr/sub x/)/sub y/MnO/sub 3-/spl delta// oriented thin filmsGuojun Liu, / Hongmei Wang, / Makino, H. / Hanada, T. / Yao, T. et al. | 2002
- 331
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ThP4 MBE Growth and Characterization of A-Site Deficient, Low-Field Magnetoresistance (Pr~1~-~xSr~x)~yMnO~3~-~d~e~l~t~a Oriented Thin Films| 2002
- 333
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ThP5 PbTe/CdTe Single Quantum Wells Grown on GaAs(100) Substrates by Molecular Beam Epitaxy| 2002
- 333
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PbTe/CdTe single quantum wells grown on GaAs[100] substrates by molecular beam epitaxyKoike, K. / Honden, T. / Makabe, I. / FengPing Yan, / Yano, M. et al. | 2002
- 335
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ThP6 Tuning of the Alloy Composition Zn~1~-~xCd~xSe Quantum Wells by Submonolayer Pulsed Beam Epitaxy| 2002
- 335
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Tuning of the alloy composition of Zn1-xCdxSe quantum wells by submonolayer pulsed beam epitaxyLopez-Luna, E. / Diaz-Arencibia, P. / Hernandez-Calderon, I. et al. | 2002
- 335
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Tuning of the alloy composition of Zn/sub 1-x/Cd/sub x/Se quantum wells by submonolayer pulsed beam epitaxyLopez-Luna, E. / Diaz-Arencibia, P. / Hernandez-Calderon, I. et al. | 2002
- 337
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ThP7 MBE-Growth and Characterization of MeF~2 (Me=Mn,Zn)/Si Heterostructures| 2002
- 337
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MBE-growth and characterization of MeF/sub 2/ (Me=Mn,Zn)/Si heterostructuresAnisimov, O.A. / Banshchikov, A.G. / Gastev, S.V. / Kartenko, N.F. / Kaveev, A.K. / Sokolov, N.S. et al. | 2002
- 339
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Template design and fabrication for low loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55 /spl mu/mYu, X. / Scaccabarozzi, L. / Pinguet, T.J. / Levi, O. / Fejer, M.M. / Harris, J.S. et al. | 2002
- 339
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ThP9 Template Design and Fabrication for Low Loss Orientation-Patterned Nonlinear Aluminum Gallium Arsenide Waveguides Pumped at 1.55 mum| 2002
- 341
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MBE grown LD arrays with non-absorption window for high peak power outputBo Baoxue, / Qu yi, / Gao xin, / Wang Ling, / Li Hui, / Wang YuXia, / Gao Dingsan, / Du Guotong, et al. | 2002
- 341
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ThP10 MBE Grown LD Arrays with Non-Absorption Window for High Peak Power Output| 2002
- 343
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High power 808 nm InGaAlAs semiconductor lasers by MBEQu Yi, / Bo Baoxue, / Liu Guojun, / Gao Xin, / Jiang Huilin, et al. | 2002
- 343
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ThP11 High Power 808nm InGaAlAs Semiconductor Lasers by MBE| 2002
- 345
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Ga/In-intermixing and segregation during InAs quantum dot formationHeyn, Ch. / Beyer, S. / Hansen, W. et al. | 2002
- 345
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ThP12 Ga/In-Intermixing and Segregation during InAs Quantum Dot Formation| 2002
- 347
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Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dotsPerez-Centeno, A. / Mendez-Garcia, V.H. / Zamora-Peredo, L. / Saucedo-Zeni, N. / Lopez-Lopez, M. et al. | 2002
- 347
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ThP13 Study of the GaAs Growth on Pseudomorphic Si Layers for the Formation of Self-Assembled Quantum Dots| 2002
- 349
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ThP14 Emission Energy and Polarization Tuning of InAs/GaAs Self-Assembled Dots by Growth Interruption| 2002
- 349
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Emission energy and polarization tuning of InAs/GaAs self-assembled dots by growth interruptionOchoa, D. / Polimeni, A. / Capizzi, M. / Patane, A. / Henini, M. / Eaves, L. / Main, P.C. et al. | 2002
- 351
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ThP15 Critical Thickness of Self-assembled Ge Quantum Dot Superlattices| 2002
- 351
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Critical thickness of self-assembled Ge quantum dot superlatticesLiu, J.L. / Wan, J. / Wang, K.L. / Yu, D.P. et al. | 2002
- 353
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ThP16 Characterization of Epitaxial Si1-yCy Layers on Si(001) Grown by Gas-Source Molecular Beam Epitaxy| 2002
- 353
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Characterization of epitaxial Si/sub 1-y/C/sub y/ layers on Si[001] grown by gas-source molecular beam epitaxyAbe, K. / Yamada, A. / Konagai, M. et al. | 2002
- 355
-
ThP17 Growth and Temperature Characteristic of Self-Assembled InAs-QD on GaInP| 2002
- 355
-
Growth and temperature characteristic of self-assembled InAs-QD on GaInPAmanai, H. / Nagao, S. / Sakaki, H. et al. | 2002
- 357
-
ThP18 Infrared Photodetector by InAs/GaAs Quantum Dots Embedded in Modulation Doped AlGaAs/GaAs Heterostructures| 2002
- 357
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Infrared photodetector by InAs/GaAs quantum dots embedded in modulation doped AlGaAs/GaAs heterostructuresKim, M.D. / Noh, S.K. / Hong, S.C. et al. | 2002
- 359
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ThP19 Photoluminescence Investigation of InAs/GaAs Self-Assembled Quantum Dots with 1.3 mum Room Temperature Emission| 2002
- 359
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Photoluminescence investigation of InAs/GaAs self-assembled quantum dots with 1.3 /spl mu/m room temperature emissionSongmuang, R. / Kiravittaya, S. / Panyakeow, S. et al. | 2002
- 361
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ThP20 InAs/GaAs Quantum Dot Formation Studied by Magneto- Photoluminescence Spectroscopy| 2002
- 361
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InAs/GaAs quantum dot formation studied by magneto-photoluminescence spectroscopyMaes, J. / Henini, M. / Hayne, M. / Patane, A. / Pulizzi, F. / Eaves, L. / Main, P.C. / Moshchalkov, V.V. et al. | 2002
- 363
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ThP21 Control of the Coalescence Phenomena in InAs/GaAs Quantum Dots by using High-Index Planes| 2002
- 363
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Control of the coalescence phenomena in InAs/GaAs quantum dots by using high-index planesTakehana, K. / Pulizzi, F. / Henini, M. / Patane, A. / Main, P.C. / Eaves, L. et al. | 2002
- 365
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ThP22 Luminescence at 1.3 and 1.5micron with GaAs-Capped InAs Quantum Dots| 2002
- 365
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Luminescence at 1.3 mu m and 1.5 mu m with GaAs-capped InAs quantum dotsSilva, M.J. da / Quivy, A.A. / Leite, J.R. et al. | 2002
- 365
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Luminescence at 1.3 /spl mu/m and 1.5 /spl mu/m with GaAs-capped InAs quantum dotsda Silva, M.J. / Quivy, A.A. / Leite, J.R. et al. | 2002
- 367
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Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxySaucedo-Zeni, N. / Zamora-Peredo, L. / Gorbatchev, A.Yu. / Lastras-Martinez, A. / Medel-Ruiz, C.I. / Mendez-Garcia, V.H. et al. | 2002
- 367
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ThP23 Growth of Self-Assembled InAs Quantum Dots on Si-Exposed GaAs Substrates by Molecular Beam Epitaxy| 2002
- 369
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ThP24 Aluminium Incorporation for Growth Optimization of Long-Wavelength InAs/GaAs Quantum Dots by Molecular Beam Epitaxy| 2002
- 369
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Aluminium incorporation for growth optimization of long-wavelength InAs/GaAs quantum dots by molecular beam epitaxyWei, Y.Q. / Wang, S.M. / Ferdos, F. / Zhao, Q.X. / Vukusic, J. / Sadeghi, M. / Larsson, A. et al. | 2002
- 371
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The effect of substrate growth temperature on the optical properties of self-assembled InAs quantum dotsPlant, J. / Zhang, B. / Santori, C. / Solomon, G. / Yamamoto, Y. et al. | 2002
- 371
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ThP25 The Effect of Substrate Growth Temperature on the Optical Properties of Self-Assembled InAs Quantum Dots| 2002
- 373
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ThP26 Effect of Annealing on the Structure and Optical properties of InGaAs/GaAs Quantum Dots| 2002
- 373
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Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dotsZhangcheng Xu, / Leosson, K. / Birkedal, D. / Hvam, J.M. / Sadowski, J. / Yanmei Liu, / Kuntang Yang, / Zongyan Zhao, / Xiaoshuang Chen, et al. | 2002
- 375
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Observation of blue shifted photoluminescence in stacked InAs/GaAs quantum dotsSomintac, A. / Estacio, E. / Salvador, A. et al. | 2002
- 375
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ThP27 Observation of Blue Shifted Photoluminescence in Stacked InAs/GaAs Quantum Dots| 2002
- 377
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ThP28 High Quality Heteroepitaxy ZnTe Lyers using Low-Temperature Buffer| 2002
- 377
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The growth of high quality heteroepitaxy ZnTe layers using low-temperature bufferJiho Chang, / Godo, K. / Jungjin Kim, / Dongcheol Oh, / Takafumi Yao, / Changwoo Lee, et al. | 2002
- 379
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ThP29 MBE Growth and Characterization of High-Mobility InAs Quantum-Well Systems for Application in Spintronics| 2002
- 379
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MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronicsSadofyev, Yu.G. / Cao, Y. / Ramamoorthy, A. / Naser, B. / Bird, J.P. / Johnson, S.R. / Zhang, Y.-H. et al. | 2002
- 381
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Observation of strong spin-orbit interaction in 2DEG in an InAs heterostructure grown on GaAs substrateKatano, Y. / Takahashi, M. / Abe, S.-I. / Yoh, K. et al. | 2002
- 381
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ThP30 Observation of Strong Spin-Orbit Interaction in 2DEG in an InAs Hterostructure Grown on GaAs Substrate| 2002
- 383
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Growth conditions in molecular beam epitaxy for controlling CdSeTe-epilayer compositionMatsumura, N. / Sakamoto, T. / Saraie, J. et al. | 2002
- 383
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ThP31 Growth Conditions in Molecular Beam Epitaxy for Controlling CdSeTe-Epilayer Composition| 2002
- 385
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Electrical properties of highly Al-doped ZnSe grown by molecular beam epitaxyOh, D.C. / Chang, J.H. / Takai, T. / Song, J.S. / Kim, J.J. / Godo, K. / Park, Y.G. / Shindo, K. / Yao, T. et al. | 2002
- 385
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ThP32 Electrical Properties of Highly Al-doped ZnSe Grown by Molecular Beam Epitaxy| 2002
- 387
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ThP33 Strong Luminescence due to Localized Excitons in CdTe/ZnSe Fractional Monolayer Structures| 2002
- 387
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Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayerTakai, T. / Jiho Chang, / Godo, K. / Goto, T. / Yao, T. et al. | 2002
- 389
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ThP34 Growth and Optical Properties of CdTe Ultra-Thin Quantum Wells| 2002
- 389
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Growth and optical properties of CdTe ultra-thin quantum wellsGarcia-Rocha, M. / Hernandez-Calderon, I. et al. | 2002
- 391
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ThP35 Photoluminescence of CdSe Quantum Dots Grown on Tilted ZnSe/GaAs(100)| 2002
- 391
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Photoluminescence of CdSe quantum dots grown on tilted ZnSe/GaAs[100]Ohishi, M. / Yoneta, M. / Takeuchi, K. / Saito, H. et al. | 2002
- 393
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Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interferencePrior, K.A. / Tang, X. / O'Donnell, C. / Bradford, C. / David, L. / Cavenett, B.C. et al. | 2002
- 393
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ThP36 Characterisation of MBE Grown II-VI Semiconductor Thin Layers by X-Ray Interference| 2002
- 397
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Si/SiGe quantum cascade structuresGrutzmacher, D. et al. | 2002
- 397
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FA1.1 Si/SiGe Quantum Cascade Structures| 2002
- 399
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Growth of ultrahigh mobility SiGe/Ge/SiGe heterostructures with very small parallel conduction and their device applicationIrisawa, T. / Koh, S. / Nakagawa, K. / Shiraki, Y. et al. | 2002
- 399
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FA1.2 Growth of Utrahigh Mobility SiGe/Ge/SiGe Heterostructures with Very Small Parallel Conduction and Their Devise Application| 2002
- 401
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FA1.3 Fabrication of High-Ge Fraction Relaxed SiGe-On-Insulator Virtual Substrate by MBE Growth and Thermal Annealing| 2002
- 401
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Fabrication of high-Ge fraction relaxed SiGe-On-Insulator virtual substrate by MBE growth and thermal annealingMiura, A. / Irisawa, T. / Koh, S. / Nakagawa, K. / Shiraki, Y. et al. | 2002
- 403
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FA1.4 Relaxation Enhancement of SiGe Thin Layers by Ion Implantation into Si Substrates| 2002
- 403
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Relaxation enhancement of SiGe thin layers by ion implantation into Si substratesSawano, K. / Hirose, Y. / Koh, S. / Nakagawa, K. / Hattori, T. / Shiraki, Y. et al. | 2002
- 405
-
FA1.5 Hole Transport Properties of B-Doped Relaxed Si~0~.~7Ge~0~.~3 Epitaxial Films Grown by MBE| 2002
- 405
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Hole transport properties of B-doped relaxed Si/sub 0.7/Ge/sub 0.3/ epitaxial films grown by MBEKoh, S. / Murata, K. / Irisawa, T. / Nakagawa, K. / Shiraki, Y. et al. | 2002
- 407
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Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structuresSawano, K. / Arimoto, K. / Hirose, Y. / Koh, S. / Usami, N. / Nakagawa, K. / Hattori, I. / Shiraki, Y. et al. | 2002
- 407
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FA1.6 Planarization of SiGe Virtual Substrates by CMP and Its Application to Strained Si Modulation-Doped Structures| 2002
- 409
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Growth, characterization, and spin dynamics of AlSb/GaSb/InAs heterostructures in [100] and [110] orientationsZinck, J.J. / Barvosa-Carter, W.B. / Skeith, S.L. / Ross, R.S. / Boggess, T.F. / Hall, K.C. / Gundogdu, K. / Altunkaya, E. / Ratsch, C. / Grosse, F. et al. | 2002
- 409
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FB1.1 Growth, Characterization, and Spin Dynamics of AlSb/GaSb/InAs Heterostructures in (100) and (110) Orientations| 2002
- 411
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FB1.2 Template Effects on the Molecular Beam Epitaxy of Modulation-Doped ZnSe/(Zn,Cd)Se Quantum Wells on (110) GaAs| 2002
- 411
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Template effects on the molecular beam epitaxy of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on [110] GaAsKu, K.C. / Chun, S.H. / Wang, W.H. / Issadore, D.A. / Samarth, N. / Epstein, R.J. / Awschalom, D.D. et al. | 2002
- 413
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Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injectionDaweritz, L. / Kastner, M. / Hesjedal, T. / Plake, T. / Jenichen, B. / Ploog, K.H. et al. | 2002
- 413
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FB1.3 Structural and Magnetic Order in MnAs Films Grown by Molecular Beam Epitaxy on GaAs for Spin Injection| 2002
- 415
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MBE growth and properties of GaCrNHashimoto, M. / Zhou, Y.K. / Kanamura, M. / Katayama-Yoshida, H. / Asahi, H. et al. | 2002
- 415
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FB1.4 MBE Growth and Properties of GaCrN| 2002
- 417
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FB1.5 Growth of the Half-Heusler Alloy NiMnSb on (In,Ga)As/InP by Molecular Beam Epitaxy| 2002
- 417
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Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxyBach, P. / Ruster, C. / Becker, C.R. / Schmidt, G. / Molenkamp, L.W. et al. | 2002
- 419
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FB1.6 Structural and Transport Properties of Mn o-doped GaAs Layers| 2002
- 419
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Structural and transport properties of Mn /spl delta/-doped GaAs layersNazmul, A.M. / Sugahara, S. / Tanaka, M. et al. | 2002
- 421
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FB1.7 MBE Growth of GaMnN DMS| 2002
- 421
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MBE growth of GaMnN diluted magnetic semiconductors and its magnetic propertiesChen, P.P. / Makino, H. / Kim, J.J. / Yao, T. et al. | 2002
- 423
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High quality GaMnAs films grown with As/sub 2/Campion, R.P. / Foxon, C.T. / Gallagher, B.L. / Edmonds, K.W. / Zhao, L. / Wang, K. et al. | 2002
- 423
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FB1.8 High Quality GaMnAs Films Grown with As~2| 2002
- 425
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Author index| 2002
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2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607)| 2002