The dynamics of a high‐pressure ac gas discharge between dielectric coated electrodes near breakdown threshold (English)
National licence
- New search for: Nagorny, V. P.
- New search for: Drallos, P. J.
- New search for: Williamson, W.
- New search for: Nagorny, V. P.
- New search for: Drallos, P. J.
- New search for: Williamson, W.
In:
Journal of Applied Physics
;
77
, 8
;
3645-3656
;
1995
- Article (Journal) / Electronic Resource
-
Title:The dynamics of a high‐pressure ac gas discharge between dielectric coated electrodes near breakdown threshold
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Contributors:
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Published in:Journal of Applied Physics ; 77, 8 ; 3645-3656
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Publisher:
- New search for: American Institute of Physics
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Publication date:1995-04-15
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 77, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3597
-
Semiconductor molecular‐beam epitaxy at low temperaturesEaglesham, D. J. et al. | 1995
- 3618
-
Adsorption‐induced surface stress and its effects on resonance frequency of microcantileversChen, G. Y. / Thundat, T. / Wachter, E. A. / Warmack, R. J. et al. | 1995
- 3618
-
Adsorption-induced surface stress and its effects on response frequency of microcantileversChen, G.Y. / Thundat, T. / Wachter, E.A. / Warmack, R.J. et al. | 1995
- 3623
-
Analysis of Paul–Straubel trap and its variationsYu, N. / Nagourney, W. et al. | 1995
- 3631
-
Dispersion curves and transmission spectra of a two‐dimensional photonic band‐gap crystal: Theory and experimentQiu, Y. / Leung, K. M. / Carin, L. / Kralj, D. et al. | 1995
- 3637
-
Phase matched second harmonic generation using thin film ZnTe optical waveguidesWagner, H. P. / Wittmann, S. / Schmitzer, H. / Stanzl, H. et al. | 1995
- 3641
-
Effects of variations in layer thickness on the reflectivity spectra of semiconductor Bragg mirrorsMurtaza, S.S. / Campbell, J.C. et al. | 1995
- 3641
-
Effects of variations in layer thicknesses on the reflectivity spectra of semiconductor Bragg mirrorsMurtaza, S. S. / Campbell, J. C. et al. | 1995
- 3645
-
The dynamics of a high‐pressure ac gas discharge between dielectric coated electrodes near breakdown thresholdNagorny, V. P. / Drallos, P. J. / Williamson, W. et al. | 1995
- 3657
-
Characterization of magnetohydrodynamic effects in a plasma opening switchSpanjers, G. G. / Yadlowsky, E. J. / Hazelton, R. C. / Moschella, J. J. et al. | 1995
- 3657
-
Characterization of magnetohydrodynamic effects in plasma opening switchSpanjers, G.G. / Yadlowsky, E.J. / Hazelton, R.C. / Moschella, J.J. et al. | 1995
- 3668
-
The effect of subwafer dielectrics on plasma properties in plasma etching reactorsHoekstra, Robert J. / Kushner, Mark J. et al. | 1995
- 3674
-
Energy of positive ions absorbed by negatively pulsed electrodes in two and three component plasmasAmin, Ali / Kim, Hyun‐Soo / Yi, Seungjun / Lonngren, Karl E. / Alexeff, Igor et al. | 1995
- 3679
-
Effects of irradiation temperature on radiation damage in InP solar cellsYamaguchi, Masafumi et al. | 1995
- 3684
-
High defect density regions in neutron irradiated high‐purity germanium: Characteristics and formation mechanismsFourches, N. et al. | 1995
- 3864
-
Seminumerical simulation of dispersive transport in the oxide of metal‐oxide semiconductor devicesLathi, Seema / Das, Amitava et al. | 1995
- 3690
-
Refractory metal silicides synthesized by metal vapor vacuum arc ion source implantationZhu, D. H. / Liu, B. X. et al. | 1995
- 3697
-
Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulationHobler, G. / Simionescu, A. / Palmetshofer, L. / Tian, C. / Stingeder, G. et al. | 1995
- 3704
-
Behavior of Bi1.7Pb0.3Sr2Ca2Cu3Ox at high temperatureZhang, H. / Ritter, F. / Frieling, T. / Kindler, B. / Assmus, W. et al. | 1995
- 3704
-
Behaviour of Bi(1.7)Pb(0.3)Sr2Ca2Cu3O(x) at high temperatureZhang, H. / Ritter, F. / Frieling, T. / Kindler, B. / Assmus, W. et al. | 1995
- 3710
-
Anomalous depth distributions of bulk microdefects in heat‐treated Czochralski silicon wafers due to nonequilibrium self‐interstitialsSatoh, Yuhki / Furuya, Hisashi / Kadoi, Mikio / Shimanuki, Yasushi et al. | 1995
- 3725
-
Interaction of iron with a grain boundary in boron‐doped multicrystalline siliconKittler, M. / Seifert, W. / Stemmer, M. / Palm, J. et al. | 1995
- 3729
-
Microstructural properties of silicon powder produced in a low pressure silane dischargeDutta, Joydeep / Bacsa, Wolfgang / Hollenstein, Ch. et al. | 1995
- 3729
-
Microstructural properties properties of silicon powder produced in a low pressure silane dischargeDutta, J. / Bacsa, W. / Hollenstein, C. et al. | 1995
- 3734
-
Optimization of ion‐beam induced charge microscopy for the analysis of integrated circuitsBreese, M. B. H. / Saint, A. / Sexton, F. W. / Horn, K. M. / Scho¨ne, H. / Doyle, B. L. / Laird, J. S. / Legge, G. J. F. et al. | 1995
- 3734
-
Optimization of ion-beam induced charge microscopy for the analysis of intetraged circuitsBreese, M.B.H. / Saint, A. / Sexton, F.W. / Horn, K.M. / Schöne, H. / Doyle, B.L. / Laird, J.S. / Legge, G.J.F. et al. | 1995
- 3742
-
On the mechanical strength of free‐standing and substrate‐bonded Al thin filmsHeinen, D. / Bohn, H. G. / Schilling, W. et al. | 1995
- 3746
-
Considerations on the precursor decay anomaly in lithium fluorideSano, Yukio et al. | 1995
- 3756
-
Experimental and numerical study of laser induced spallation in glassde Ress´guier, T. / Cottet, F. et al. | 1995
- 3762
-
Correlation between strain fields on the facet and along the cavity in semiconductor diode lasersYang, Jian / Cassidy, Daniel T. et al. | 1995
- 3766
-
High‐energy‐ion damage in semicrystalline polyvinylidene fluorideMusumeci, P. / Calcagno, L. / Percolla, R. / Foti, G. et al. | 1995
- 3766
-
High-energy-ion damage in semicrystalline poyvinylidene fluorideMusumeci, P. et al. | 1995
- 3774
-
Ion beam induced lateral diffusion in Ni/Si couples at room temperatureDesimoni, J. / Hage`ge, S. / Traverse, A. et al. | 1995
- 3777
-
Low temperature properties of the filled skutterudite CeFe4Sb12Morelli, Donald T. / Meisner, Gregory P. et al. | 1995
- 3782
-
Nickel silicide formation in silicon implanted nickelRao, Z. / Williams, J. S. / Pogany, A. P. / Sood, D. K. / Collins, G. A. et al. | 1995
- 3791
-
Crystallization and growth of Ni‐Si alloy thin films on inert and on silicon substratesGrimberg, I. / Weiss, B. Z. et al. | 1995
- 3799
-
A highly oriented Al[111] texture developed on ultrathin metal underlayersKamijo, Atsushi / Mitsuzuka, Tsutomu et al. | 1995
- 3805
-
Orientation control of (Ca,Sr)CuO2 thin filmsNagai, Satoshi / Tanaka, Hideaki / Fujimura, Norifumi / Ito, Taichiro et al. | 1995
- 3812
-
Sputtering of boron‐doped graphite USB15—Investigation of the origin of low chemical erosionSchwo¨rer, R. / Roth, J. et al. | 1995
- 3818
-
Interface structure of CdSe/ZnSe epilayersWu, Xue‐Hua / Peng, Zhong‐Ling / Yuan, Shi‐Xing / Li, Fang‐Hua et al. | 1995
- 3823
-
Hydrogen ion interactions with silicon carbide and the nucleation of diamond thin filmsLannon, J. M. / Gold, J. S. / Stinespring, C. D. et al. | 1995
- 3831
-
Microstructure of the Cr underlayer and its effect on Sm‐Co//Cr thin filmsLiu, Y. / Robertson, B. W. / Shan, Z. S. / Liou, S. H. / Sellmyer, D. J. et al. | 1995
- 3836
-
Structure of AlAs/GaAs distributed Bragg reflector grown on Si substrate by metalorganic chemical vapor depositionEgawa, T. / Jimbo, T. / Umeno, M. et al. | 1995
- 3839
-
Phase and composition depth distribution analyses of low energy, high flux N implanted stainless steelO¨ztu¨rk, Orhan / Williamson, D. L. et al. | 1995
- 3851
-
High resolution method for the analysis of admittance spectroscopy dataMaier, D. / Hug, P. / Fiederle, M. / Eiche, C. / Ebling, D. / Weese, J. et al. | 1995
- 3858
-
Improvement of minority carrier diffusion length in Si by Al getteringJoshi, Subhash M. / Go¨sele, Ulrich M. / Tan, Teh Y. et al. | 1995
- 3868
-
Electronic structures of Si1−xCx and Si1−x−yCxGey alloysXie, Jianjun / Zhang, Kaiming / Xie, Xide et al. | 1995
- 3872
-
Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler–Wronski effectKounavis, P. et al. | 1995
- 3879
-
Photoconductive spectroscopy of diamond grown by chemical vapor depositionAllers, L. / Collins, A. T. et al. | 1995
- 3885
-
Hydrogen passivation and its effects on carrier trapping by dislocations in InP/GaAs heterostructuresChatterjee, B. / Ringel, S. A. et al. | 1995
- 3899
-
Native oxides on Si surfaces of deep‐submicron contact‐hole bottomsAoto, Nahomi / Nakamori, Masaharu / Yamasaki, Shinya / Hada, Hiromitsu / Ikarashi, Nobuyuki / Ishida, Koichi / Teraoka, Yuden / Nishiyama, Iwao et al. | 1995
- 3908
-
Electrical characteristics and thermal stability of ohmic contacts to p‐type In0.47Ga0.53/As/InPLeech, Patrick W. / Reeves, Geoffrey K. et al. | 1995
- 3913
-
Impact ionization in GaAs metal–semiconductor field‐effect transistors with a lightly doped drain structure and an Al0.2Ga0.8As/GaAs heterobuffer layerHaruyama, Junzi / Katano, Humiaki et al. | 1995
- 3919
-
Er‐related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxyElsaesser, D. W. / Yeo, Y. K. / Hengehold, R. L. / Evans, K. R. / Pedrotti, F. L. et al. | 1995
- 3927
-
Carrier transport properties of iodine‐doped (ZnS)3(ZnSe)42 ordered alloys grown by atomic layer epitaxyFujiwara, Hiroyuki / Kiryu, Hideaki / Shimizu, Isamu et al. | 1995
- 3934
-
Raman spectroscopic analysis of the free carrier concentration in GaAs oval defectsDobal, P. S. / Bist, H. D. / Mehta, S. K. / Jain, R. K. et al. | 1995
- 3938
-
Photoconducting properties of a ladder polymerNarayan, K. S. / Taylor‐Hamilton, B. E. / Spry, R. J. / Ferguson, J. B. et al. | 1995
- 3942
-
Hysteretic behavior of the transport critical current density in a bent Bi‐Pb‐Sr‐Ca‐Cu‐O silver sheathed tapeLee, W. D. / Horng, L. / Yang, T. J. / Chiou, Bi‐Shiou et al. | 1995
- 3945
-
Critical‐state magnetization of type‐II superconductors in rectangular slab and cylinder geometriesJohansen, T. H. / Bratsberg, H. et al. | 1995
- 3953
-
Interface structure and perpendicular magnetic anisotropy in Pt/Co multilayersBertero, G. A. / Sinclair, R. / Park, C.‐H. / Shen, Z. X. et al. | 1995
- 3960
-
Magnetization reversal in systems of interacting magnetically hard particlesWirth, S. et al. | 1995
- 3965
-
Magnetic properties of Fe/Pd multilayers grown by electron‐beam evaporationLi, M. / Ma, X. D. / Peng, C. B. / Zhao, J. G. / Mei, L. M. / Liu, Y. H. / Gu, Y. S. / Chai, W. P. / Mai, Z. H. / Shen, B. G. et al. | 1995
- 3971
-
A study of interlayer coupling in Co/Cu multilayersJin, Q. Y. / Zhai, H. R. / Xu, Y. B. / Zhai, Y. / Lu, M. / Zhou, S. M. / Payson, J. S. / Dunifer, G. L. / Naik, R. / Auner, G. W. et al. | 1995
- 3975
-
Band states and shallow hole traps in Pb(Zr,Ti)O3 ferroelectricsRobertson, J. / Warren, W. L. / Tuttle, B. A. et al. | 1995
- 3981
-
Thickness‐dependent electrical characteristics of lead zirconate titanate thin filmsUdayakumar, K. R. / Schuele, P. J. / Chen, J. / Krupanidhi, S. B. / Cross, L. E. et al. | 1995
- 3987
-
Electrostriction of the copolymer of vinylidene‐fluoride and trifluoroethyleneElhami, K. / Gauthier‐Manuel, B. / Manceau, J. F. / Bastien, F. et al. | 1995
- 3987
-
Electrostriction of the copolymer of vinylidene-fluoride and trifluorethyleneElhami, K. / Gauthier-Manuel, B. / Manceau, J.F. / Bastien, F. et al. | 1995
- 3991
-
Relaxor‐normal ferroelectric transition in tetragonal‐rich field of Pb(Ni1/3Nb2/3)O3‐PbTiO3‐PbZrO3 systemYoon, Man‐Soon / Jang, Hyun M. et al. | 1995
- 4002
-
Shift and deformation of the hysteresis curve of ferroelectrics by defects: An electrostatic modelRobels, U. / Calderwood, J. H. / Arlt, G. et al. | 1995
- 4002
-
Shift and deformation of the hysteresis curve of ferroelectronics by defects: an electrostatic modelRobels, U. / Calderwood, J.H. / Arlt, G. et al. | 1995
- 4009
-
In situ observation of the strain in GaP on Si during cooling step after growth by Raman spectroscopySugiura, Masayuki / Kishi, Masato / Katoda, Takashi et al. | 1995
- 4013
-
Nature of photoluminescence involving transitions from the ground to 4f n−1 5d1 states in rare‐earth‐doped glassesYokokawa, T. / Inokuma, H. / Ohki, Y. / Nishikawa, H. / Hama, Y. et al. | 1995
- 4013
-
Nature of photoluminescence involving transitions from the ground to 4f(n-1) 5d(1) states rare-earth-doped glassesYokokawa, T. / Inokuma, H. / Ohki, Y. / Nishikawa, H. / Hama, Y. et al. | 1995
- 4018
-
Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layersRoura, P. / Clark, S. A. / Bosch, J. / Peira, F. / Cornet, A. / Morante, J. R. et al. | 1995
- 4021
-
Cathodoluminescence from fractured surfaces of ZnO varistorsTanaka, Shigeru / Takahashi, Ken / Sekiguchi, Takashi / Sumino, Koji / Tanaka, Junzo et al. | 1995
- 4021
-
Cathodoluminescence foam fractured surfaces of ZnO varistorsTanaka, Shigeru / Takahashi, Ken / Sekiguchi, Takashi / Sumino, Koji / Tanaka, Junzo et al. | 1995
- 4024
-
Infrared intersubband transitions in double‐quantum wells under the electric fieldSoldatenko, Yu. N. / Vasko, F. T. et al. | 1995
- 4030
-
Etching characteristics of thin films of tungsten, amorphous silicon carbide, and SAL‐603 resist submitted to a surface‐wave driven SF6 magnetoplasma near electron cyclotron resonance conditionsBounasri, F. / Moisan, M. / St‐Onge, L. / Margot, J. / Chaker, M. / Pelletier, J. / El Khakani, M. A. / Gat, E. et al. | 1995
- 4039
-
Thermodynamics and kinetics of the undercooled liquid and the glass transition of the Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 alloyBusch, R. / Kim, Y. J. / Johnson, W. L. et al. | 1995
- 4044
-
Crystallization process of amorphous GaSb films studied by Raman spectroscopyDias da Silva, J. H. / da Silva, S. W. / Galzerani, J. C. et al. | 1995
- 4049
-
Multiple internal reflection infrared spectroscopy of hydrogen adsorbed on diamond(110)McGonigal, M. / Russell, J. N. / Pehrsson, P. E. / Maguire, H. G. / Butler, J. E. et al. | 1995
- 4054
-
Continuum model of dispersion caused by an inherent material characteristic lengthRubin, M. B. / Rosenau, P. / Gottlieb, O. et al. | 1995
- 4064
-
Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulseKarasik, B. S. / Zorin, M. A. / Milostnaya, I. I. / Elantev, A. I. / Gol’tsman, G. N. / Gershenzon, E. M. et al. | 1995
- 4071
-
Capacitance and hysteresis study of AlAs/GaAs resonant tunneling diode with asymmetric spacer layersWei, T. / Stapleton, S. / Berolo, O. et al. | 1995
- 4077
-
Modeling the effect of a buried layer in GaAs metal‐semiconductor‐metal photodetectorsHurd, C. M. / McKinnon, W. R. et al. | 1995
- 4088
-
Theory for the multiloop dc superconducting quantum interference device magnetometer and experimental verificationDrung, D. / Knappe, S. / Koch, H. et al. | 1995
- 4099
-
Transmission electron microscopy and atomic force microscopy analysis of Nb‐Al‐AlOx‐Nb superconducting tunnel junction detectorsRando, N. / Videler, P. / Peacock, A. / van Dordrecht, A. / Verhoeve, P. / Venn, R. / Wright, A. C. / Lumley, J. et al. | 1995
- 4107
-
Optical epilayers on silicon substrate: Electronic and optical properties of ZnS/Si superlatticeWang, E. G. / Ting, C. S. et al. | 1995
- 4110
-
Process dependence of the SiO2/Si(100) interface structureLu, Z. H. / Tay, S. P. / Miller, T. / Chiang, T.‐C. et al. | 1995
- 4113
-
Improved Si3N4/Si/GaAs metal‐insulator‐semiconductor interfaces by in situ anneal of the as‐deposited SiTao, Meng / Botchkarev, Andrei E. / Park, Daegyu / Reed, John / Chey, S. Jay / Van Nostrand, Joseph E. / Cahill, David G. / Morkoc¸, Hadis et al. | 1995
- 4116
-
Surface resistance and residual losses of Ag‐doped YBa2Cu3O7−δ thin films on sapphirePinto, R. / Apte, P. R. / Hegde, M. S. / Kumar, Dhananjay et al. | 1995
- 4116
-
Surface resistance and residual losses of Ag-doped YBa2Cu 3)O7 - d thin films on sapphirePinto, R. et al. | 1995
- 4119
-
1.3 mm InAsP compressively strained multiple-quantum-well lasers for high-temperature operationOohashi, H. et al. | 1995
- 4119
-
1.3 μm InAsP compressively strained multiple‐quantum‐well lasers for high‐temperature operationOohashi, H. / Hirono, T. / Seki, S. / Sugiura, H. / Nakano, J. / Yamamoto, M. / Tohmori, Y. / Yokoyama, K. et al. | 1995
- 4122
-
Molecular dynamics simulation of mass transfer in molten siliconKakimoto, Koichi et al. | 1995
- 4125
-
Electron irradiation induced outgrowths from quartzStevens Kalceff, M. A. / Phillips, M. R. et al. | 1995
- 4128
-
A comparison of models for phonon scattering in silicon inversion layersGa´miz, F. / Lo´pez‐Villanueva, J. A. et al. | 1995
- 4130
-
Re‐establishment of photoluminescence in Cu quenched porous silicon by acid treatmentHilliard, Joseph E. / Nayfeh, Hasan M. / Nayfeh, Munir H. et al. | 1995
- 4133
-
Thermomagnetic analysis of NdFeB melt‐spun alloys with low Nd contentKim, Y. B. / Park, W. S. / Kim, H. T. / Cho, Y. S. / Kim, C. S. / Park, M. J. / Kim, T. K. et al. | 1995
- 4136
-
Study on the formation mechanism of a complex domain structure in LiNbO3Zhang, Zhi‐yong / Zhu, Yong‐yuan / Zhu, Shi‐ning / Shu, Hong / Wang, Hai‐feng / Hong, Jing‐fen / Ge, Chuan‐zhen / Ming, Nai‐ben et al. | 1995
- 4139
-
Application of Kramers-Krönig analysis to the photoreflectance spectra of heavily doped GaAs-SI-GaAs structuresJezierski, K. et al. | 1995
- 4139
-
Application of Kramers-Kroenig analysis to the photoreflectance spectra of heavily doped GaAs/Si-GaAs structuresJezierski, K. / Markiewicz, P. / Misiewicz, J. / Panek, M. et al. | 1995
- 4139
-
Application of Kramers–Kro¨nig analysis to the photoreflectance spectra of heavily doped GaAs/SI‐GaAs structuresJezierski, K. / Markiewicz, P. / Misiewicz, J. / Panek, M. / S´ciana, B. / Korbutowicz, R. / Tl&slash;aczal&slash;a, M. et al. | 1995
- 4142
-
Deposition of C60 films by partially ionized fullerene beamsRen, Zhong‐Min / Xiong, Xia‐Xing / Du, Yuan‐Cheng / Ying, Zhi‐Feng / Li, Fu‐Ming / Chen, Liang‐Yao et al. | 1995
- 4145
-
Quantum beats of excitons in Zn1−xCdxSe/ZnSe multiple quantum well structuresWeckendrup, D. / Saschek, M. / Neukirch, U. / Gutowski, J. / Ferreira, S. O. / Sitter, H. et al. | 1995
- 4148
-
Empirical formula for the spin‐orbit splitting in semiconductorsNag, B. R. et al. | 1995
- 4150
-
On degradation of ZnSe‐based blue‐green diode lasersHovinen, M. / Ding, J. / Salokatve, A. / Nurmikko, A. V. / Hua, G. C. / Grillo, D. C. / He, Li / Han, J. / Ringle, M. / Gunshor, R. L. et al. | 1995
- 4153
-
Comment on ‘‘Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk HgxCd1−xTe’’ [J. Appl. Phys. 74, 4774 (1993)]Williams, G. M. et al. | 1995
- 4153
-
Comment on "Temperature limits on infrared detectivities of InAs-InxGa1 - xSb superlattices and bulk HgxCd(sub 1 - x)Te" (J. Appl. Phys. 74, 4774 (1993))Williams, G.M. et al. | 1995
- 4156
-
Reply to ‘‘Comment on ‘Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk Hg1−xCdxTe’ ’’ [J. Appl. Phys. 74, 4774 (1993)]Grein, C. H. / Flatte´, M. E. / Ehrenreich, H. / Miles, R. H. et al. | 1995
- 4159
-
Erratum: ‘‘Production of semi‐insulating layers in n‐doped InP by Fe implantation’’ [J. Appl. Phys. 76, 5085 (1994)]Carnera, A. / Gasparotto, A. / Tromby, M. / Caldironi, M. / Pellegrino, S. / Vidimari, F. / Bocchi, C. / Frigeri, C. et al. | 1995
- 4159
-
"Production of semi-insulating layers in n-doped InP by Fe implantation: [J. Appl. Phys. 76, 5085 (1994)]Carnera, A. / Gasparotto, A. / Tromby, M. / Caldironi, M. et al. | 1995
- 4160
-
CUMULATIVE AUTHOR INDEX| 1995