Acoustic graded‐index lenses (English)
National licence
- New search for: Jen, C. K.
- New search for: Wang, Z.
- New search for: Nicolle, A.
- New search for: Neron, C.
- New search for: Adler, E. L.
- New search for: Kushibiki, J.
- New search for: Jen, C. K.
- New search for: Wang, Z.
- New search for: Nicolle, A.
- New search for: Neron, C.
- New search for: Adler, E. L.
- New search for: Kushibiki, J.
In:
Applied Physics Letters
;
59
, 12
;
1398-1400
;
1991
- Article (Journal) / Electronic Resource
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Title:Acoustic graded‐index lenses
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Contributors:Jen, C. K. ( author ) / Wang, Z. ( author ) / Nicolle, A. ( author ) / Neron, C. ( author ) / Adler, E. L. ( author ) / Kushibiki, J. ( author )
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Published in:Applied Physics Letters ; 59, 12 ; 1398-1400
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Publisher:
- New search for: American Institute of Physics
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Publication date:1991-09-16
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 59, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1395
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Etched‐facet AlGaAs triangular‐shaped ring lasers with output couplingBehfar‐Rad, A. / Ballantyne, J. M. / Wong, S. S. et al. | 1991
- 1398
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Acoustic graded‐index lensesJen, C. K. / Wang, Z. / Nicolle, A. / Neron, C. / Adler, E. L. / Kushibiki, J. et al. | 1991
- 1401
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Extremely‐low‐threshold and high‐temperature operation in a photopumped ZnSe/ZnSSe blue laserNakanishi, K. / Suemune, I. / Fujii, Y. / Kuroda, Y. / Yamanishi, M. et al. | 1991
- 1404
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Cumulative nature of two‐wave mixing and its dependence on crystal orientationJoseph, Joby / Singh, K. / Pillai, P. K. C. et al. | 1991
- 1407
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Buried heterostructure laser fabricated using three‐step gas source molecular beam epitaxyLie´vin, J.‐L. / Bonnevie, D. / Poingt, F. / Starck, C. / Sigogne, D. / Le Gouezigou, O. / Goldstein, L. et al. | 1991
- 1409
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Direct visual observation of powder dynamics in rf plasma‐assisted depositionHowling, A. A. / Hollenstein, Ch. / Paris, P.‐J. et al. | 1991
- 1412
-
Study of the composition of thin dielectrics grown on Si in a pure N2O ambientChu, T. Y. / Ting, W. / Ahn, J. H. / Lin, S. / Kwong, D. L. et al. | 1991
- 1415
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Nanocomposites by fractal growth of electrodeposited silver in ion‐exchanged oxide glassesRoy, S. / Chakravorty, D. et al. | 1991
- 1418
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High‐temperature compressive plastic deformation of Nd2Fe14B single crystalsKuhrt, Ch. / Schultz, L. / Schnitzke, K. / Hock, S. / Behrensmeier, R. et al. | 1991
- 1421
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Continuous amorphous antimony thin films obtained by low‐energy cluster beam depositionJensen, Pablo / Melinon, Patrice / Treilleux, Michel / Hoareau, Alain / Hu, Jian Xiong / Cabaud, Bernard et al. | 1991
- 1424
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Cu passivation: A method of inhibiting copper‐polyamic acid interactionsShih, D‐Y. / Kim, J. / Walker, G. F. / Chang, C‐A. / Paraszczak, J. / Nunes, S. / Yang, C. et al. | 1991
- 1427
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Mole fractions of H, CH3, and other species during filament‐assisted diamond growthHsu, W. L. et al. | 1991
- 1430
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Lateral solid phase crystallization of amorphous Si induced by patterned indium tin oxide on a glass substrateGuendouz, M. / Richard, J. / Joubert, P. / Haji, L. et al. | 1991
- 1433
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Cobalt thin films prepared by chemical vapor deposition from cobaltous acetateMaruyama, Toshiro / Nakai, Tsuyoshi et al. | 1991
- 1435
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Body current scanning: A novel technique for characterizing the floating body effects and parasitic bipolar action in silicon‐on‐insulator metal‐oxide‐semiconductor transistorsLiu, Patrick S. / Li, G. P. et al. | 1991
- 1438
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Low‐pressure chemical vapor deposition of low in situ phosphorus doped silicon thin filmsSarret, M. / Liba, A. / Bonnaud, O. et al. | 1991
- 1440
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Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rateColter, P. C. / Hussien, S. A. / Dip, A. / Erdogˇan, M. U. / Duncan, W. M. / Bedair, S. M. et al. | 1991
- 1443
-
Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasmaJohnson, N. M. / Nebel, C. E. / Santos, P. V. / Jackson, W. B. / Street, R. A. / Stevens, K. S. / Walker, J. et al. | 1991
- 1446
-
Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxyFang, Z. M. / Ma, K. Y. / Cohen, R. M. / Stringfellow, G. B. et al. | 1991
- 1449
-
Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor depositionKhan, M. Asif / Kuznia, J. N. / Van Hove, J. M. / Olson, D. T. et al. | 1991
- 1452
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Nonlinear dependencies of Si diffusion in δ‐doped GaAsCunningham, J. E. / Chiu, T. H. / Jan, W. / Kuo, T. Y. et al. | 1991
- 1455
-
1.4 ps rise‐time high‐voltage photoconductive switchingMotet, T. / Nees, J. / Williamson, S. / Mourou, G. et al. | 1991
- 1458
-
Homogeneous hydrogen‐terminated Si(111) surface formed using aqueous HF solution and waterWatanabe, Satoru / Nakayama, Noriaki / Ito, Takashi et al. | 1991
- 1461
-
Ga delta‐doping layers in siliconZagwijn, P. M. / Erokhin, Y. N. / Slijkerman, W. F. J. / van der Veen, J. F. / van de Walle, G. F. A. / Gravesteijn, D. J. / van Gorkum, A. A. et al. | 1991
- 1464
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Stress‐migration related electromigration damage mechanism in passivated, narrow interconnectsLi, C.‐Y. / Bo&slash;rgesen, P. / Sullivan, T. D. et al. | 1991
- 1467
-
Ion implantation doping and isolation of In0.5Ga0.5PPearton, S. J. / Kuo, J. M. / Ren, F. / Katz, A. / Perley, A. P. et al. | 1991
- 1470
-
Brewster angle spectroscopy: A new method for characterization of defect levels in semiconductorsLewerenz, H. J. / Dietz, N. et al. | 1991
- 1473
-
Diamond deposition on silicon surfaces heated to temperature as low as 135 °CIhara, M. / Maeno, H. / Miyamoto, K. / Komiyama, H. et al. | 1991
- 1476
-
Time‐resolved reflectivity studies of the GaAs(100)/oxide and GaAs(100)/ZnSe interfaceCheville, R. A. / Haynes, W. B. / Halas, N. J. et al. | 1991
- 1479
-
Selective growth of silicon‐germanium alloys by atmospheric‐pressure chemical vapor deposition at low temperaturesAgnello, P. D. / Sedgwick, T. O. / Goorsky, M. S. / Ott, J. / Kuan, T. S. / Scilla, G. et al. | 1991
- 1482
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Observation of vacancy type defects in Ga‐doped ZnSe using a monoenergetic positron beamMiyajima, T. / Okuyama, H. / Akimoto, K. / Mori, Y. / Wei, L. / Tanigawa, S. et al. | 1991
- 1485
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High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxyAina, L. / Mattingly, M. / Burgess, M. / Potter, R. / O’Connor, J. M. et al. | 1991
- 1488
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Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structuresHamao, N. / Sugimoto, M. / Kohmoto, S. / Yokoyama, H. et al. | 1991
- 1491
-
Low‐temperature‐grown GaAs quantum wells: Femtosecond nonlinear optical and parallel‐field transport studiesKnox, W. H. / Doran, G. E. / Asom, M. / Livescu, G. / Leibenguth, R. / Chu, S. N. G. et al. | 1991
- 1494
-
Electric field‐dependent conductivity of polycrystalline diamond thin filmsHuang, Bohr‐ran / Reinhard, D. K. et al. | 1991
- 1497
-
Excitonic absorption saturation in ternary alloy AlxGa1−xAs/AlAs multiple‐quantum‐well structuresDabbicco, M. / Cingolani, R. / Ferrara, M. / Ploog, K. / Fisher, A. et al. | 1991
- 1500
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High‐frequency properties of resonant tunneling devicesKislov, V. / Kamenev, A. et al. | 1991
- 1503
-
Pulsed organometallic beam epitaxy of complex oxide filmsDuray, S. J. / Buchholz, D. B. / Song, S. N. / Richeson, D. S. / Ketterson, J. B. / Marks, T. J. / Chang, R. P. H. et al. | 1991
- 1506
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Scanning tunneling microscope surface imaging and etching of single crystals of the high‐temperature superconductor Tl2Ba2CuO6+δParks, D. C. / Wang, Jihong / Clark, Noel A. / Hermann, A. M. et al. | 1991
- 1509
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High misfit epitaxial growth: Superconducting YBa2Cu3O7−x thin films on (100)BaF2 substratesWang, S. Z. / Xiong, G. C. / He, Y. M. / Luo, B. / Su, W. / Yao, S. D. et al. | 1991
- 1512
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Rapid solidification of a plasma‐sprayed ceramic coating melted by a CO2 laserShieh, June‐Hua / Wu, Shinn‐Tyan et al. | 1991