Strain relaxation in [001]‐ and [111]‐GaAs/CaF2 analyzed by Raman spectroscopy (English)
National licence
- New search for: Puech, P.
- New search for: Landa, G.
- New search for: Carles, R.
- New search for: Pizani, P. S.
- New search for: Daran, E.
- New search for: Fontaine, C.
- New search for: Puech, P.
- New search for: Landa, G.
- New search for: Carles, R.
- New search for: Pizani, P. S.
- New search for: Daran, E.
- New search for: Fontaine, C.
In:
Journal of Applied Physics
;
77
, 3
;
1126-1132
;
1995
- Article (Journal) / Electronic Resource
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Title:Strain relaxation in [001]‐ and [111]‐GaAs/CaF2 analyzed by Raman spectroscopy
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Contributors:Puech, P. ( author ) / Landa, G. ( author ) / Carles, R. ( author ) / Pizani, P. S. ( author ) / Daran, E. ( author ) / Fontaine, C. ( author )
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Published in:Journal of Applied Physics ; 77, 3 ; 1126-1132
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Publisher:
- New search for: American Institute of Physics
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Publication date:1995-02-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 77, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 955
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Simulation of diffusion and trapping in digitized heterogeneous mediaCoker, David A. / Torquato, Salvatore et al. | 1995
- 965
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Relaxation processes in poled nonlinear optical polymer filmsSuzuki, Akiyoshi / Matsuoka, Yoshihiko et al. | 1995
- 970
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Static electric fields due to seeding inside and outside of a planar waveguideBrauer, M. L. / Dajani, I. et al. | 1995
- 976
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Optical and magnetic resonance study of impurity ions in undoped and cerium‐doped Sr0.61Ba0.39Nb2O6Giles, N. C. / Wolford, J. L. / Edwards, G. J. / Uhrin, R. et al. | 1995
- 981
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Intensity dependence of the third‐harmonic‐generation efficiency for high‐power far‐infrared radiation in n‐siliconUrban, M. / Nieswand, Ch. / Siegrist, M. R. / Keilmann, F. et al. | 1995
- 985
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Study of surface charges on dielectric electrodes in a radio‐frequency glow dischargeKakuta, S. / Kamata, T. / Makabe, T. / Kobayashi, S. / Terai, K. / Tamagawa, T. et al. | 1995
- 992
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Unified particle simulation technique for the plasma bulk and the cathode sheath of a dc glow dischargeMeyer, Peter / Wunner, Gu¨nter / Schmitt, Wolfgang / Ruder, Hanns et al. | 1995
- 1001
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X‐ray scattering from nonideal multilayer structures: Calculations in the kinematical approximationBruson, A. / Toussaint, J. C. et al. | 1995
- 1010
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Formation and kinetics of ion‐induced yttrium silicide layersAlford, T. L. et al. | 1995
- 1015
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Distribution of incident ions and retained dose analysis for a wedge‐shaped target in plasma source ion implantationMalik, Shamim M. / Muller, D. E. / Sridharan, K. / Fetherston, R. P. / Tran, Ngoc / Conrad, J. R. et al. | 1995
- 1020
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Nitrogen implantation in (100)-b-SiC layers grown on Si substrateHirano, Yasuaki et al. | 1995
- 1020
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Nitrogen implantation in (100)-beta-SiC layers grown on Si substrateHirano, Y. / Inada, T. et al. | 1995
- 1020
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Nitrogen implantation in (100)‐β‐SiC layers grown on Si substrateHirano, Yasuaki / Inada, Taroh et al. | 1995
- 1029
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Characterization of buried K‐fulleride layers formed by ion implantationPalmetshofer, L. / Geretschla¨ger, M. / Kastner, J. / Kuzmany, H. / Piplits, K. et al. | 1995
- 1034
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Optical and electrical properties of Ag‐As‐S glassesOhto, M. / Itoh, M. / Tanaka, K. et al. | 1995
- 1040
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Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP‐coated GaAs substratesChen, Y. F. / Shen, J. L. / Chang, I. M. / Chang, S. Z. / Lee, S. C. et al. | 1995
- 1043
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In situ spectroscopic ellipsometry to monitor the process of TiN(sub x) thin films deposited by reactive sputteringLogothetidis, S. et al. | 1995
- 1043
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In situ spectroscopic ellipsometry to monitor the process of TiNx thin films deposited by reactive sputteringLogothetidis, S. / Alexandrou, I. / Papadopoulos, A. et al. | 1995
- 1048
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Layering of inertial confinement fusion targets in microgravity environmentsParks, P. B. / Fagaly, R. L. et al. | 1995
- 1055
-
Structural and magnetic studies of FexCo1−x(001) alloy films on MgO(001) substratesMu¨hge, Th. / Zeidler, Th. / Wang, Q. / Morawe, Ch. / Metoki, N. / Zabel, H. et al. | 1995
- 1061
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Correlation of mesoscopic structure, electronic structure, and current‐controlled electrical switching of KH2PO4 and poly(p‐phenylene vinylene) composite filmsYamamoto, Hiromichi et al. | 1995
- 1069
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Growth, structural, and optical properties of II‐VI layers: (001) CdMnTe grown by molecular‐beam epitaxyBodin, C. / Cibert, J. / Grieshaber, W. / Si Dang, Le / Marcenat, F. / Wasiela, A. / Jouneau, P. H. / Feuillet, G. / Herve´, D. / Molva, E. et al. | 1995
- 1082
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Al2Cu precipitate distribution in AlCu interconnects after electromigration stressing: A study by Auger microscopy and ion beam bevellingBarkshire, I. R. / Prutton, M. et al. | 1995
- 1086
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Solid state reaction of Co,Ti with epitaxially‐grown Si1−xGex film on Si(100) substrateQi, Wen‐Jie / Li, Bing‐Zong / Huang, Wei‐Ning / Gu, Zhi‐Guang / Lu, Hong‐Qiang / Zhang, Xiang‐Jiu / Zhang, Ming / Dong, Guo‐Sheng / Miller, David C. / Aitken, Robert G. et al. | 1995
- 1093
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Generation of guided polaritons in electro‐optic LiTaO3 probesHollricher, O. / Ru¨ders, F. / Buchal, Ch. et al. | 1995
- 1097
-
Exciton binding energy in a quantum wire in the presence of a magnetic fieldLi, Gang / Branis, Spiros V. / Bajaj, K. K. et al. | 1995
- 1105
-
Magnetic‐field effects on current‐generated spatially periodic potentials in p‐Ge at 4.2 KLiu, Shuzheng / Zitter, R. N. et al. | 1995
- 1107
-
Noise performance of bound‐to‐miniband transition III‐V quantum‐well infrared photodetectorsWang, Daniel C. / Bosman, Gijs / Wang, Yeng H. / Li, Sheng S. et al. | 1995
- 1113
-
Short‐period transient grating measurements of perpendicular over‐barrier diffusion in GaAs/AlGaAs multiple quantum wellsNorwood, D. P. / Smirl, Arthur L. / Swoboda, H.‐E. et al. | 1995
- 1120
-
Mechanism of photocurrent multiplication in amorphous silicon carbide Schottky cellsAkita, Seiji / Ueda, Hiro‐omi / Nakayama, Yoshikazu et al. | 1995
- 1126
-
Strain relaxation in [001]‐ and [111]‐GaAs/CaF2 analyzed by Raman spectroscopyPuech, P. / Landa, G. / Carles, R. / Pizani, P. S. / Daran, E. / Fontaine, C. et al. | 1995
- 1133
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Current induced degradation in boron‐doped hydrogenated amorphous silicon: A novel investigation techniqueMasini, G. / De Cesare, G. / Palma, F. et al. | 1995
- 1137
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Interface‐trap generation at ultrathin SiO2 (4–6 nm)‐Si interfaces during negative‐bias temperature agingOgawa, Shigeo / Shimaya, Masakazu / Shiono, Noboru et al. | 1995
- 1149
-
Effect of quantum carrier and escape time on frequency chirp in multiple‐quantum‐well lasersWartak, M. S. / Makino, T. / Chen, Y. et al. | 1995
- 1154
-
Evidence of type‐II band alignment at the ordered GaInP to GaAs heterointerfaceLiu, Q. / Derksen, S. / Lindner, A. / Scheffer, F. / Prost, W. / Tegude, F.‐J. et al. | 1995
- 1159
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Influence of silicon wafer surface orientation on very thin oxide qualityOhmi, T. / Matsumoto, K. / Nakamura, K. / Makihara, K. / Takano, J. / Yamamoto, K. et al. | 1995
- 1165
-
Effect of structure and morphology on resistive loss at 10 GHz of the large‐area laser‐deposited YBa2Cu3O7 thin filmsLiu, J. Z. / Tian, Y. J. / Li, L. / Guo, L. P. / Zhao, Z. X. / Xu, S. F. / Lu, H. B. / Zhou, Y. L. / Chen, Z. H. / Cui, D. F. et al. | 1995
- 1171
-
Numerical study of fluxon dynamics in a system of two‐stacked Josephson junctionsPetraglia, A. / Ustinov, A. V. / Pedersen, N. F. / Sakai, S. et al. | 1995
- 1178
-
Structure and magnetic properties of MnBiDy(Sm) permanent magnetic filmsFang, Ruiyi / Fang, Qingqing / Zhang, Sheng / Peng, Chubing / Dai, Daosheng et al. | 1995
- 1184
-
Stress effect on coercivity of g-Fe2O3 thin filmsChang, W.D. et al. | 1995
- 1184
-
Stress effect on coercivity of gamma-F8~2O~3 thin filmsChang, W. D. / Chin, T. S. / Wu, H. S. / Chou, S. W. et al. | 1995
- 1184
-
Stress effect on coercivity of γ‐Fe2O3 thin filmsChang, W. D. / Chin, T. S. / Wu, H. S. / Chou, S. W. / Jou, J. H. et al. | 1995
- 1184
-
Stress effect on coercivity of gamma-Fe2O3 thin filmsChang, W.D. / Chin, T.S. / Wu, H.S. / Chou, S.W. / Jou, J.H. et al. | 1995
- 1189
-
Magnetic properties of layered CuO in CuO/Al2O3 and CuO/MgO multilayersSohma, M. / Kawaguchi, K. / Fujii, Y. et al. | 1995
- 1194
-
Investigation of the magnetization processes of Nd‐Fe‐B permanent magnets using a torsion pendulum magnetometervon Staa, F. et al. | 1995
- 1201
-
Pyroelectric properties of ferroelectric liquid crystal cells with chevron, bookshelf, and helical structuresO’Sullivan, J. W. / Panarin, Yu. P. / Vij, J. K. et al. | 1995
- 1207
-
Photosensitivity of proton implanted germania‐doped planar silica structuresKyle, D. J. / Weiss, B. L. / Maxwell, G. D. et al. | 1995
- 1211
-
Influence of exciton diffusion and localization on cathodoluminescence imaging of quantum well structuresJahn, U. / Fujiwara, K. / Menniger, J. / Hey, R. / Grahn, H. T. et al. | 1995
- 1217
-
Photoluminescence spectroscopy of growth‐interrupted GaAs/AlAs single quantum wells subjected to hydrogenationYu, Haiping / Mookherjee, Paul B. / Murray, Ray / Yoshinaga, Atshushi et al. | 1995
- 1225
-
Photoluminescence studies in CuAlSe2 epilayers grown by low‐pressure metalorganic chemical‐vapor depositionChichibu, S. / Shirakata, S. / Isomura, S. / Harada, Y. / Uchida, M. / Matsumoto, S. / Higuchi, H. et al. | 1995
- 1233
-
Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2Geisz, J. F. / Kuech, T. F. / Ellis, A. B. et al. | 1995
- 1241
-
Raman study of band bending at ZnSe/GaAs interfacesPage`s, O. / Renucci, M. A. / Briot, O. / Aulombard, R. L. et al. | 1995
- 1249
-
Optical properties of PbSeSuzuki, Norihiro / Sawai, Katsuyuki / Adachi, Sadao et al. | 1995
- 1256
-
Erbium in crystal silicon: Optical activation, excitation, and concentration limitsPolman, A. / van den Hoven, G. N. / Custer, J. S. / Shin, J. H. / Serna, R. / Alkemade, P. F. A. et al. | 1995
- 1256
-
Erbium in crystal silicon: Optcial activation, excitation, and concentration limitsPolman, A. / Hoven, G.N. van den / Custer, J.S. / Shin, J.H. / Serna, R. / Alkemade, P.F.A. et al. | 1995
- 1263
-
Chemical and physical sputtering of fluorinated siliconBarone, M. E. / Graves, D. B. et al. | 1995
- 1275
-
Photoemission from Mg irradiated by short pulse ultraviolet and visible lasersSrinivasan‐Rao, T. / Fischer, J. / Tsang, T. et al. | 1995
- 1280
-
Stresses in chemical vapor deposited epitaxial 3C‐SiC membranesSu, C. M. / Fekade, A. / Spencer, M. / Wuttig, Manfred et al. | 1995
- 1284
-
Hydrogen incorporation in silicon nitride films deposited by remote electron‐cyclotron‐resonance chemical vapor depositionKotecki, David E. / Chapple‐Sokol, Jonathan D. et al. | 1995
- 1294
-
Chemical aspects in copper‐implanted fused silica and soda‐lime glassesBertoncello, R. / Trivillin, F. / Cattaruzza, E. / Mazzoldi, P. / Arnold, G. W. / Battaglin, G. / Catalano, M. et al. | 1995
- 1301
-
Zinc oxide/n‐Si junction solar cells produced by spray‐pyrolysis methodKobayashi, H. / Mori, H. / Ishida, T. / Nakato, Y. et al. | 1995
- 1308
-
Influence of the growth mode on the quality of metallic superlattices: The case of the (100) Felr systemAndrieu, Ste´phane / Snoeck, Etienne / Arcade, Philippe / Piecuch, Michel et al. | 1995
- 1308
-
Influence of the growth mode on the quality of metallic superlattices: The case of the (100) FeIr systemAndrieu, Stéphane et al. | 1995
- 1308
-
Influence of the growth model on the quality of metallic superlattices: The case of the (100) FeIr systemAndrieu, S. / Etienne Snoeck / Arcade, P. / Piecuch, M. et al. | 1995
- 1311
-
Photocapacitance investigation of the two photoquenching levels in n‐type GaAs crystals with excess arsenic atomsNishizawa, Jun‐ichi / Oyama, Yutaka / Dezaki, Kazushi et al. | 1995
- 1314
-
Optical methods for determining diffusion in magnetic quantum‐well structuresStirner, T. / Harrison, P. / Hagston, W. E. et al. | 1995
- 1317
-
High‐temperature ohmic contact to n‐type 6H‐SiC using nickelCrofton, J. / McMullin, P. G. / Williams, J. R. / Bozack, M. J. et al. | 1995
- 1317
-
A high-temperature ohmic contact to n-type 6H-SiC using nickelCrofton, J. et al. | 1995
- 1320
-
Determination of silicon point defect parameters and reaction barrier energies from gold diffusion experimentsGhaderi, K. / Hobler, G. / Budil, M. / Mader, L. / Schulze, H. J. et al. | 1995
- 1323
-
Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, Hl) solutionsLi, L. et al. | 1995
- 1323
-
Surface passivation and microroughness of (100) silicon etched in aqueous hydrogen halide (HF, HCl, HBr, HI) solutionsLi, L. / Bender, H. / Trenkler, T. / Mertens, P. W. / Meuris, M. / Vandervorst, W. / Heyns, M. M. et al. | 1995
- 1326
-
Continuous wave spectral width of surface‐emitting lasersDutta, N. K. / Vakhshoori, D. / Wynn, J. D. / Leibenguth, R. E. et al. | 1995
- 1328
-
Infrared‐absorption line shapes of shallow donors in cylindrical quantum‐well‐wire structuresLatge´, A. / Oliveira, Luiz E. et al. | 1995
- 1331
-
"Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors" [J. Appl. Phys. 75, 7910 (1994)]McGregor, D. S. / Rojeski, R. A. / Knoll, G. F. / Terry, F. L. et al. | 1995
- 1331
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Erratum: ‘‘Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors’’ [J. Appl. Phys. 75, 7910 (1994)]McGregor, Douglas S. / Rojeski, Ronald A. / Knoll, Glenn F. / Terry, Fred L. / East, Jack / Eisen, Yosef et al. | 1995
- 1332
-
"Comparison of two-dimensional Heisenberg and two-dimensional XY model behaviors in Pd (1.2 at. % Fe films)" [J. Appl. Phys. 76 7114 (1994)]McKinley, J. D. et al. | 1995
- 1332
-
Erratum: ‘‘Comparison of two‐dimensional Heisenberg and two‐dimensional XY model behaviors in Pd (1.2 at. % Fe films)’’ [J. Appl. Phys. 76, 7114 (1994)]McKinley, J. D. et al. | 1995
- 1333
-
Erratum: ‘‘Permanent magnet film magneto‐optic waveguide isolator’’ [J. Appl. Phys. 75, 6286 (1994)]Levy, M. / Scarmozzino, R. / Osgood, R. M. / Wolfe, R. / Cadieu, F. J. / Hegde, H. / Gutierrez, C. J. / Prinz, G. A. et al. | 1995
- 1333
-
"Permanent magnet film magneto-optic waveguide isolator" [J. Appl. Phys. 75, 6286 (1994)]Levy, M. / Scarmozzino, R. / Osgood, R. M. / Wolfe, R. et al. | 1995
- 1334
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CUMULATIVE AUTHOR INDEX| 1995
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INFORMATION FOR CONTRIBUTORS| 1995
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CROSS-DISCIPLINARY PHYSICS (PACS 81-98)| 1995
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CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79)| 1995
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GENERAL PHYSICS: Nuclear, Atomic, and Molecular (PACS 01-36)| 1995
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CONDENSED MATTER: Structure, Mechanical, and Thermal Properties (PACS 61-68)| 1995
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CONDENSED MATTER: Electrical and Magnetic Properties (PACS 71-76)| 1995
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CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41-52)| 1995