Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements (English)
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- New search for: Cui, L. J.
- New search for: Zeng, Y. P.
- New search for: Wang, B. Q.
- New search for: Zhu, Z. P.
- New search for: Lin, L. Y.
- New search for: Jiang, C. P.
- New search for: Guo, S. L.
- New search for: Chu, J. H.
- New search for: Cui, L. J.
- New search for: Zeng, Y. P.
- New search for: Wang, B. Q.
- New search for: Zhu, Z. P.
- New search for: Lin, L. Y.
- New search for: Jiang, C. P.
- New search for: Guo, S. L.
- New search for: Chu, J. H.
In:
Applied Physics Letters
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80
, 17
;
3132-3134
;
2002
- Article (Journal) / Electronic Resource
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Title:Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements
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Contributors:Cui, L. J. ( author ) / Zeng, Y. P. ( author ) / Wang, B. Q. ( author ) / Zhu, Z. P. ( author ) / Lin, L. Y. ( author ) / Jiang, C. P. ( author ) / Guo, S. L. ( author ) / Chu, J. H. ( author )
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Published in:Applied Physics Letters ; 80, 17 ; 3132-3134
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Publisher:
- New search for: American Institute of Physics
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Publication date:2002-04-29
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 80, Issue 17
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3033
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Visualization of low-frequency liquid surface acoustic waves by means of optical diffractionMiao, Runcai / Yang, Zongli / Zhu, Jingtao / Shen, Changyu et al. | 2002
- 3036
-
Broadband optical amplifier based on a conjugated polymerLawrence, J. R. / Turnbull, G. A. / Samuel, I. D. W. et al. | 2002
- 3039
-
Wavelength stabilization of semiconductor lasers with a tunable photodetectorColace, Lorenzo / Masini, Gianlorenzo / Assanto, Gaetano et al. | 2002
- 3042
-
Polarization effects of a europium complex in stretched polyethyleneSrdanov, V. I. / Robinson, M. R. / Bartl, M. H. / Bu, X. / Bazan, G. C. et al. | 2002
- 3045
-
Coupled-stripe quantum-well-assisted AlGaAs–GaAs–InGaAs–InAs quantum-dot laserWalter, G. / Chung, T. / Holonyak, N. et al. | 2002
- 3048
-
Intrinsic reduction of the depolarization loss in solid-state lasers by use of a (110)-cut Y3Al5O12 crystalShoji, Ichiro / Taira, Takunori et al. | 2002
- 3051
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Unidirectional bistability in semiconductor waveguide ring lasersSorel, M. / Laybourn, P. J. R. / Giuliani, G. / Donati, S. et al. | 2002
- 3054
-
Effects of insertion of strain-mediating layers on luminescence properties of 1.3-(micro)m GaInNAs-GaNAs-GaAs quantum-well structuresPavelescu, E.-M. et al. | 2002
- 3054
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Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structuresPavelescu, E.-M. / Peng, C. S. / Jouhti, T. / Konttinen, J. / Li, W. / Pessa, M. / Dumitrescu, M. / Spa⁁nulescu, S. et al. | 2002
- 3057
-
Rate equations of vertical-cavity semiconductor optical amplifiersRoyo, P. / Koda, R. / Coldren, L. A. et al. | 2002
- 3060
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Quantum cascade lasers with double metal-semiconductor waveguide resonatorsUnterrainer, Karl / Colombelli, Raffaele / Gmachl, Claire / Capasso, Federico / Hwang, Harold Y. / Sergent, A. Michael / Sivco, Deborah L. / Cho, Alfred Y. et al. | 2002
- 3063
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Symmetry-induced perfect transmission of light waves in quasiperiodic dielectric multilayersPeng, R. W. / Huang, X. Q. / Qiu, F. / Wang, Mu / Hu, A. / Jiang, S. S. / Mazzer, M. et al. | 2002
- 3066
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Principle and application of a thermal probe to reactive plasmasStamate, E. / Sugai, H. / Ohe, K. et al. | 2002
- 3069
-
Dislocation jumping over the sound barrier in tungstenLi, Qikai / Shi, San-Qiang et al. | 2002
- 3072
-
Delayed phase explosion during high-power nanosecond laser ablation of siliconLu, Quanming / Mao, Samuel S. / Mao, Xianglei / Russo, Richard E. et al. | 2002
- 3075
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Evidence of swelling of SiO2 upon thermal annealingBanerjee, S. / Chakraborty, S. / Lai, P. T. et al. | 2002
- 3078
-
Ordering of Ge quantum dots with buried Si dislocation networksLeroy, F. / Eymery, J. / Gentile, P. / Fournel, F. et al. | 2002
- 3081
-
Percolation behavior in the Raman spectra of ZnBeTe alloyPage`s, O. / Tite, T. / Bormann, D. / Maksimov, O. / Tamargo, M. C. et al. | 2002
- 3084
-
Selective study of polymer/dielectric interfaces with vibrationally resonant sum frequency generation via thin-film interferenceWilson, Philip T. / Briggman, Kimberly A. / Wallace, William E. / Stephenson, John C. / Richter, Lee J. et al. | 2002
- 3087
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Unusual transition phenomenon in Zr-based bulk metallic glass upon heating at high pressureSun, Liling / Kikegawa, Takumi / Wu, Qi / Zhai, Zhanji / Wang, Wenkui et al. | 2002
- 3090
-
Manufacture of specific structure of aluminum-doped zinc oxide films by patterning the substrate surfaceJiang, X. / Jia, C. L. / Szyszka, B. et al. | 2002
- 3093
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Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substratesRiemann, T. / Christen, J. / Kaschner, A. / Laades, A. / Hoffmann, A. / Thomsen, C. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2002
- 3096
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Thermophysical properties and glass forming ability in the alloy series (Ti100−xZrx)45(Ni14.5Cu85.5)55Hays, C. C. / Glade, S. C. et al. | 2002
- 3099
-
Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structuresAumer, M. E. / LeBoeuf, S. F. / Moody, B. F. / Bedair, S. M. / Nam, K. / Lin, J. Y. / Jiang, H. X. et al. | 2002
- 3102
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Large changes in refractive index by synchrotron-radiation-driven compaction of hydrogenated silicon nitride filmsAkazawa, Housei et al. | 2002
- 3105
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Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substratesKim, Kwiseon / Hart, Gus L. W. / Zunger, Alex et al. | 2002
- 3108
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Boundary conditions in an electric current contactTitov, O. Yu. / Giraldo, J. / Gurevich, Yu. G. et al. | 2002
- 3111
-
Band alignment between GaAs and partially ordered GaInPZhang, Yong / Mascarenhas, Angelo / Wang, Lin-Wang et al. | 2002
- 3114
-
Bias-dependent photoluminescence in CdTe photovoltaicsShvydka, Diana / Karpov, V. G. / Compaan, A. D. et al. | 2002
- 3117
-
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructuresMyronov, M. / Irisawa, T. / Mironov, O. A. / Koh, S. / Shiraki, Y. / Whall, T. E. / Parker, E. H. C. et al. | 2002
- 3120
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Transport properties of Mn δ-doped GaAs and the effect of selective dopingNazmul, Ahsan M. / Sugahara, S. / Tanaka, M. et al. | 2002
- 3120
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Transport properties of Mn d-doped GaAs and the effect of selective dopingNazmul, Ahsan M. et al. | 2002
- 3123
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Tris-(8-hydroxyquinoline)aluminum-based organic light-emitting devices with Al/CaF2 cathode: Performance enhancement and interface electronic structuresLee, J. / Park, Y. / Lee, S. K. / Cho, E.-J. / Kim, D. Y. / Chu, H. Y. / Lee, H. / Do, L.-M. / Zyung, T. et al. | 2002
- 3126
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Spin splitting in modulation-doped AlGaN/GaN two-dimensional electron gasTsubaki, K. / Maeda, N. / Saitoh, T. / Kobayashi, N. et al. | 2002
- 3129
-
Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solutionSong, June O / Park, Seong-Ju / Seong, Tae-Yeon et al. | 2002
- 3132
-
Zero-field spin splitting in In0.52Al0.48As/InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurementsCui, L. J. / Zeng, Y. P. / Wang, B. Q. / Zhu, Z. P. / Lin, L. Y. / Jiang, C. P. / Guo, S. L. / Chu, J. H. et al. | 2002
- 3135
-
60&percent; magnetoresistance at room temperature in Co–Fe/Al–O/Co–Fe tunnel junctions oxidized with Kr–O2 plasmaTsunoda, Masakiyo / Nishikawa, Kazuhiro / Ogata, Satoshi / Takahashi, Migaku et al. | 2002
- 3138
-
Anomalous Hall effect in La1−xCaxCoO3Baily, S. A. / Salamon, M. B. / Kobayashi, Y. / Asai, K. et al. | 2002
- 3141
-
Local magnetic ordering in La1−xCaxMnO3 determined by spin-polarized x-ray absorption spectroscopyQian, Q. / Tyson, T. A. / Kao, C.-C. / Croft, M. / Ignatov, A. Yu. et al. | 2002
- 3144
-
Spin-coherent transport in ferromagnetically contacted carbon nanotubesZhao, B. / Mo¨nch, I. / Vinzelberg, H. / Mu¨hl, T. / Schneider, C. M. et al. | 2002
- 3147
-
Resonant terahertz radiation from Tl2Ba2CaCu2O8+d thin films by ultrafast optical pulse excitationTominari, Yukihiro et al. | 2002
- 3147
-
Resonant terahertz radiation from Tl2Ba2CaCu2O8+δ thin films by ultrafast optical pulse excitationTominari, Yukihiro / Kiwa, Toshihiko / Murakami, Hironaru / Tonouchi, Masayoshi / Wald, Hagen / Seidel, Paul / Schneidewind, Henrik et al. | 2002
- 3150
-
Stroboscopic single-shot detection of the flux state in a radio frequency superconducting quantum interference deviceCosmelli, C. / Sciamanna, F. / Castellano, M. G. / Leoni, R. / Torrioli, G. / Carelli, P. / Chiarello, F. et al. | 2002
- 3153
-
Fluxon insertion into annular Josephson junctionsUstinov, Alexey V. et al. | 2002
- 3156
-
Spin valves with interlayer coupling domain biasingLu, Z. Q. / Pan, G. et al. | 2002
- 3159
-
Fast time-resolved x-ray diffraction in BaTiO3 films subjected to a strong high-frequency electric fieldZolotoyabko, E. / Quintana, J. P. / Hoerman, B. H. / Wessels, B. W. et al. | 2002
- 3162
-
Field-cooled static nonlinear response of relaxor ferroelectricsKutnjak, Z. / Pirc, R. / Blinc, R. et al. | 2002
- 3165
-
Polarized Raman scattering of epitaxial PbTiO3 thin film with coexisting c and a domainsLee, Sun-Hwa / Jang, Hyun M. / Cho, Seong M. / Yi, Gyu-Chul et al. | 2002
- 3168
-
Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory applicationChen, San-Yuan / Sun, Chia-Liang / Chen, Shi-Bai / Chin, Albert et al. | 2002
- 3171
-
Na0.5K0.5NbO3 thin films for voltage controlled acoustoelectric device applicationsCho, Choong-Rae / Katardjiev, Ilia / Grishin, Michael / Grishin, Alex et al. | 2002
- 3174
-
Piezoelectric properties and phase transitions of <001>-oriented Pb(Zn1-3Nb2-3)O3-PbTiO3 single crystalsRen, W. et al. | 2002
- 3174
-
Piezoelectric properties and phase transitions of 〈001〉-oriented Pb(Zn1/3Nb2/3)O3–PbTiO3 single crystalsRen, W. / Liu, S-F. / Mukherjee, B. K. et al. | 2002
- 3177
-
Suppressed boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor structuresCho, Heung-Jae / Park, Dae-Gyu / Lim, Kwan-Yong / Ko, Jung-Kyu / Yeo, In-Seok / Park, Jin Won / Roh, Jae-Sung et al. | 2002
- 3180
-
Determination of the optimal cation composition of ferroelectric (ZnxCd1−x)S thin films for applications to silicon-based nonvolatile memoriesHotta, Y. / Rokuta, E. / Jhoi, J.-H. / Tabata, H. / Kobayashi, H. / Kawai, T. et al. | 2002
- 3183
-
Application of HfSiON as a gate dielectric materialVisokay, M. R. / Chambers, J. J. / Rotondaro, A. L. P. / Shanware, A. / Colombo, L. et al. | 2002
- 3186
-
Artificial nanocluster crystal: Lattice of identical Al clustersJia, Jinfeng / Wang, Jun-Zhong / Liu, Xi / Xue, Qi-Kun / Li, Zhi-Qiang / Kawazoe, Y. / Zhang, S. B. et al. | 2002
- 3189
-
Field emission from nonaligned carbon nanotubes embedded in a polystyrene matrixPoa, C. H. / Silva, S. R. P. / Watts, P. C. P. / Hsu, W. K. / Kroto, H. W. / Walton, D. R. M. et al. | 2002
- 3192
-
Performance projections for ballistic carbon nanotube field-effect transistorsGuo, Jing / Lundstrom, Mark / Datta, Supriyo et al. | 2002
- 3195
-
Size effect in mesoscopic epitaxial ferroelectric structures: Increase of piezoelectric response with decreasing feature sizeBu¨hlmann, S. / Dwir, B. / Baborowski, J. / Muralt, P. et al. | 2002
- 3198
-
Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetectionMonroy, E. / Palacios, T. / Hainaut, O. / Omne`s, F. / Calle, F. / Hochedez, J.-F. et al. | 2002
- 3201
-
Anthracene derivatives for stable blue-emitting organic electroluminescence devicesShi, Jianmin / Tang, Ching W. et al. | 2002
- 3204
-
Three-terminal gated magnetoelectronic deviceZelakiewicz, S. / Johnson, Mark et al. | 2002
- 3207
-
Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistorsTan, W. S. / Houston, P. A. / Parbrook, P. J. / Wood, D. A. / Hill, G. / Whitehouse, C. R. et al. | 2002
- 3210
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High speed data link between digital superconductor chipsHerr, Quentin P. / Smith, Andrew D. / Wire, Michael S. et al. | 2002
- 3213
-
Quantitative analysis of one-dimensional dopant profile by electron holographyMcCartney, M. R. / Gribelyuk, M. A. / Li, Jing / Ronsheim, P. / McMurray, J. S. / Smith, David J. et al. | 2002
- 3216
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Maximum current in nitride-based heterostructure field-effect transistorsKoudymov, A. / Fatima, H. / Simin, G. / Yang, J. / Khan, M. Asif / Tarakji, A. / Hu, X. / Shur, M. S. / Gaska, R. et al. | 2002
- 3219
-
Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devicesSaks, N. S. / Ancona, M. G. / Rendell, R. W. et al. | 2002
- 3222
-
Resonant-cavity-enhanced heterostructure metal–semiconductor–metal photodetectorChen, Xiying / Nabet, Bahram / Quaranta, Fabio / Cola, Adriano / Currie, Marc et al. | 2002
- 3225
-
Charge-density wave as an electro-optical switch and memoryOgawa, N. / Miyano, K. et al. | 2002
- 3228
-
Monte Carlo simulation of bremsstrahlung emission by electronsAcosta, E. / Llovet, X. / Salvat, F. et al. | 2002
- 3231
-
Erratum: “Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors” [Appl. Phys. Lett. 80, 1580 (2002)]Shen, T.-C. / Ji, J.-Y. / Zudov, M. A. / Du, R.-R. / Kline, J. S. / Tucker, J. R. et al. | 2002