Characteristics of heavily doped ultrashallow junction prepared by plasma doping and laser annealing (English)
- New search for: Baek, Sungkweon
- New search for: Heo, Sungho
- New search for: Choi, Haejung
- New search for: Hwang, Hyunsang
- New search for: Baek, Sungkweon
- New search for: Heo, Sungho
- New search for: Choi, Haejung
- New search for: Hwang, Hyunsang
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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23
, 1
;
257-261
;
2005
- Article (Journal) / Electronic Resource
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Title:Characteristics of heavily doped ultrashallow junction prepared by plasma doping and laser annealing
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Additional title:Characteristics of heavily doped ultrashallow junction
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Contributors:Baek, Sungkweon ( author ) / Heo, Sungho ( author ) / Choi, Haejung ( author ) / Hwang, Hyunsang ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:2005-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 23, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Electrical and optical properties of GaCrN films grown by molecular beam epitaxyPolyakov, A. Y. / Smirnov, N. B. / Govorkov, A. V. / Thaler, G. T. / Frazier, R. M. / Abernathy, C. R. / Pearton, S. J. et al. | 2005
- 5
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Thermal oxidation of epitaxial layers characterized by Raman and infrared spectroscopiesCuadras, A. / Garrido, B. / Morante, J. R. / Hunt, C. E. / Robinson, McD et al. | 2005
- 11
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Deposition of silica-silver nanocomposites by magnetron cosputteringBoscarino, Diego / Vomiero, Alberto / Mattei, Giovanni / Quaranta, Alberto / Mazzoldi, Paolo / Della Mea, Gianantonio et al. | 2005
- 20
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Local pressure in the proximity of a field emitterŽumer, Marko / Nemanič, Vincenc / Zajec, Bojan et al. | 2005
- 24
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Deposition of diamond-like carbon film on phase-change optical disk by PECVDUeng, H. Y. / Guo, C. T. et al. | 2005
- 32
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Fabrication technique for microelectromechanical systems vertical comb-drive actuators on a monolithic silicon substrateZhang, Q. X. / Liu, A. Q. / Li, J. / Yu, A. B. et al. | 2005
- 42
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Improved characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor depositionKadoshima, Masaru / Akiyama, Koji / Yamamoto, Katsuhiko / Fujiwara, Hideaki / Yasuda, Tetsuji / Nabatame, Toshihide / Toriumi, Akira et al. | 2005
- 48
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Electrical properties of and contacts onLin, Yow-Jon et al. | 2005
- 51
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Sidewall profile control of thick benzocyclobutene reactively ion etched in plasmasBuchwald, Walter R. / Vaccaro, Kenneth et al. | 2005
- 57
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Use of UV light for selective-area fibroblast cell growthKang, B. S. / Ren, F. / Jeong, B. S. / Kwon, Y. W. / Baik, K. H. / Norton, D. P. / Pearton, S. J. et al. | 2005
- 61
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Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structuresDouhéret, O. / Bonsels, S. / Anand, S. et al. | 2005
- 66
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Characterization of prototype silicon pitch artifacts fabricated by scanning probe lithography and anisotropic wet etchingChien, F. S.-S. / Hsieh, W.-F. / Gwo, S. / Jun, J. / Silver, R. M. / Vladár, A. E. / Dagata, J. A. et al. | 2005
- 72
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Nanoimprint process using epoxy-siloxane low-viscosity prepolymerViallet, Benoît / Gallo, Pascal / Daran, Emmanuelle et al. | 2005
- 76
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Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructuresKluth, S. M. / Álvarez, D. / Trellenkamp, St. / Moers, J. / Mantl, S. / Kretz, J. / Vandervorst, W. et al. | 2005
- 80
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Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applicationsMa, Dongjoon / Park, Sungho / Seo, Bum-Seok / Choi, SangJun / Lee, Naesung / Lee, Jung-Hyun et al. | 2005
- 84
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Predicting surface figure in diamond turned calcium fluoride using in-process force measurementMarsh, Eric R. / John, Binu P. / Couey, Jeremiah A. / Wang, Jue / Grejda, Robert D. / Vallance, R. Ryan et al. | 2005
- 90
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High-temperature self-grown layer against Cu diffusion at interfaceLiu, C. J. / Chen, J. S. et al. | 2005
- 96
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Anodic bonding using the low expansion glass ceramic Zerodur®van Elp, J. / Giesen, P. T. M. / van der Velde, J. J. et al. | 2005
- 99
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Tapered sidewall dry etching process for GaN and its applications in device fabricationChoi, H. W. / Jeon, C. W. / Dawson, M. D. et al. | 2005
- 103
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Mass spectrometry studies of resist trimming processes in and chemistriesPargon, E. / Joubert, O. / Chevolleau, T. / Cunge, G. / Xu, Songlin / Lill, Thorsten et al. | 2005
- 113
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High-temperature electrostatic chuck for nonvolatile materials dry etchKanno, S. / Edamura, M. / Yoshioka, K. / Nishio, R. / Kanai, S. / Kihara, H. / Shimada, T. et al. | 2005
- 119
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Use of lateral film structure for ultrathin diffusion barrier thermal stability studyLim, Boon Kiat / Park, Hun-Sub / Tan, Valuina / See, Alex K. H. / Seet, Chim-Seng / Lee, Tae-Jong / Yakovlev, Nikolai L. et al. | 2005
- 125
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Chamber maintenance and fault detection technique for a gate etch process via self-excited electron resonance spectroscopyBaek, Kye Hyun / Jung, Youngjae / Min, Gyung Jin / Kang, Changjin / Cho, Han Ku / Moon, Joo Tae et al. | 2005
- 130
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Fabrication of natural diamond microlenses by plasma etchingChoi, H. W. / Gu, E. / Liu, C. / Griffin, C. / Girkin, J. M. / Watson, I. M. / Dawson, M. D. et al. | 2005
- 133
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Partial blanking of an electron beam using a quadrupole lensZhang, Feng / Smith, Henry I. et al. | 2005
- 138
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Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithographyJunarsa, Ivan / Stoykovich, Mark P. / Nealey, Paul F. / Ma, Yuansheng / Cerrina, Franco / Solak, Harun H. et al. | 2005
- 144
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Studies on the interfacial and crystallographic characteristics of and stacksKim, Joong-Jung / Yang, Jun-Mo / Jang, Se-Aug / Lim, Kwan-Yong / Cho, Heung-Jae / Lee, Soun-Young / Kawasaki, Masahiro et al. | 2005
- 149
-
Photoluminescence properties of -type InGaAsN grown by rf plasma-assisted molecular beam epitaxyXie, S. Y. / Yoon, S. F. / Wang, S. Z. et al. | 2005
- 153
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Formation of film on via phase transformation assisted by interfacial layerChung, K. B. / Choi, Y. K. / Jang, M. H. / Noh, M. / Whang, C. N. / Jang, H. K. / Jung, E. J. / Ko, D.-H. et al. | 2005
- 157
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High-current-density field emitters based on arrays of carbon nanotube bundlesManohara, Harish M. / Bronikowski, Michael J. / Hoenk, Michael / Hunt, Brian D. / Siegel, Peter H. et al. | 2005
- 162
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thin film growth on (0001)-GaNHansen, Peter J. / Terao, Yutaka / Wu, Yuan / York, Robert A. / Mishra, Umesh K. / Speck, J. S. et al. | 2005
- 168
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Analysis of stress and composition of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition for microfabrication processesCianci, E. / Pirola, F. / Foglietti, V. et al. | 2005
- 173
-
On-wafer monitoring of plasma-induced electrical current in silicon dioxide to predict plasma radiation damageOkigawa, Mitsuru / Ishikawa, Yasushi / Samukawa, Seiji et al. | 2005
- 178
-
Schottky barrier height of -type Si(100) evaluated by forward current–voltage and capacitancePelleg, Joshua / Douhin, A. et al. | 2005
- 186
-
Rigorous coupled wave analysis of front-end-of-line wafer alignment marksYeo, Swee Hock / Tan, Chin Boon / Khoh, Andrew et al. | 2005
- 196
-
Subpicosecond jitter in picosecond electron bunchesIoakeimidi, K. / Gradinaru, S. / Liu, Z. / Machuca, F. / Nielsen, J. F. / Aldana, R. / Bolton, R. P. / Clendenin, J. / Leheny, R. / Pease, R. F. W. et al. | 2005
- 201
-
Temperature dependent defect formation and charging in hafnium oxides and silicatesLim, D. / Haight, R. et al. | 2005
- 206
-
Electron-beam-assisted etching of films byWang, S. / Sun, Y.-M. / White, J. M. / Stivers, A. / Liang, T. et al. | 2005
- 210
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Highly selective low-damage processes using advanced neutral beams for porous low- filmsOhtake, Hiroto / Inoue, Nobuhiko / Ozaki, Takuya / Samukawa, Seiji / Soda, Eiichi / Inukai, Kazuaki et al. | 2005
- 217
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Deposition control for reduction of photoresist degradation in dielectric etchingNegishi, N. / Takesue, H. / Sumiya, M. / Yoshida, T. / Momonoi, Y. / Izawa, M. et al. | 2005
- 224
-
Quantifying acid generation efficiency for photoresist applicationsTsiartas, Pavlos C. / Schmid, Gerard M. / Johnson, Heather F. / Stewart, Michael D. / Willson, C. Grant et al. | 2005
- 229
-
Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnectOu, Keng-Liang / Yu, Ming-Sun / Hsu, Ray-Quen / Lin, Ming-Hong et al. | 2005
- 236
-
Solvent-assisted polymer-bonding lithographyLuan, Shifang / Xing, Rubo / Wang, Zhe / Yu, Xinhong / Han, Yanchun et al. | 2005
- 242
-
Effect of self-patterned template layer on the structural and optical properties of Ge dotsIsmail, B. / Descoins, M. / Ronda, A. / Bassani, F. / Brémond, G. / Maaref, H. / Berbezier, I. et al. | 2005
- 247
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Cleaning of extreme ultraviolet lithography optics and masks using and radiationHamamoto, K. / Tanaka, Y. / Watanabe, T. / Sakaya, N. / Hosoya, M. / Shoki, T. / Hada, H. / Hishinuma, N. / Sugahara, H. / Kinoshita, H. et al. | 2005
- 252
-
Lithographic tuning of photonic-crystal unit-cell resonators with quantum dots emitting atChoi, Y.-S. / Kim, S.-K. / Kim, S.-H. / Park, H.-G. / Lee, Y.-H. / Kaiander, I. N. / Hopfer, F. / Sellin, R. L. / Bimberg, D. et al. | 2005
- 257
-
Characteristics of heavily doped ultrashallow junction prepared by plasma doping and laser annealingBaek, Sungkweon / Heo, Sungho / Choi, Haejung / Hwang, Hyunsang et al. | 2005
- 262
-
Selective growth of InAs quantum dots on patterned GaAsHsieh, Tung-Po / Chiu, Pei-Chin / Liu, Yu-Chuan / Yeh, Nien-Tze / Ho, Wen-Jeng / Chyi, Jen-Inn et al. | 2005
- 267
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Ideal delta doping of carbon in GaAsWinking, L. / Wenderoth, M. / Reusch, T. C. G. / Ulbrich, R. G. / Wilbrandt, P.-J. / Kirchheim, R. / Malzer, S. / Döhler, G. et al. | 2005
- 271
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Electron-beam patterning with sub- line edge roughnessMalac, Marek / Egerton, Ray / Freeman, Mark / Lau, June / Zhu, Yimei / Wu, Lijun et al. | 2005
- 274
-
Properties of Mn- and Co-doped bulk ZnO crystalsPolyakov, A. Y. / Smirnov, N. B. / Govorkov, A. V. / Kozhukhova, E. A. / Heo, Y. W. / Ivill, M. P. / Ip, K. / Norton, D. P. / Pearton, S. J. / Kelly, J. et al. | 2005
- 280
-
Diffusion-barrier properties of alloy films and silicidation-induced Cu penetration in contactsNoya, Atsushi / Takeyama, Mayumi B. / Sase, Touko et al. | 2005
- 288
-
Evaluation of lanthanum based gate dielectrics deposited by atomic layer depositionTriyoso, D. H. / Hegde, R. I. / Grant, J. M. / Schaeffer, J. K. / Roan, D. / White, B. E. / Tobin, P. J. et al. | 2005
- 298
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Performance of nanomanipulator fabricated on glass capillary by focused-ion-beam chemical vapor depositiona)Kometani, Reo / Hoshino, Takayuki / Kondo, Kazushige / Kanda, Kazuhiro / Haruyama, Yuichi / Kaito, Takashi / Fujita, Jun-ichi / Ishida, Masahiko / Ochiai, Yukinori / Matsui, Shinji et al. | 2005
- 302
-
Monitoring polarization and high-numerical aperture with phase shifting masks: Radial phase gratingMcIntyre, Gregory / Neureuther, Andrew R. et al. | 2005
- 307
-
Verification studies of thermophoretic protection for extreme ultraviolet masksa)Dedrick, Daniel E. / Beyer, Eric W. / Rader, Daniel J. / Klebanoff, Leonard E. / Leung, Alvin H. et al. | 2005
- 318
-
Pulsed laser deposition of lanthanum monosulfide thin films on silicon substratesa)Fairchild, S. / Jones, J. / Cahay, M. / Garre, K. / Draviam, P. / Boolchand, P. / Wu, X. / Lockwood, D. J. et al. | 2005
- 322
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Investigation of ohmic contact to heterostructure field-effect transistora)Kim, Ki Hong / Jeon, Chang Min / Oh, Sang Ho / Lee, Jong-Lam / Park, Chan Gyung / Lee, Jung Hee / Lee, Kyu Seok / Koo, Yang Mo et al. | 2005
- 327
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Effects of amine- and pyridine-terminated molecular nanolayers on adhesion at interfacesGanesan, P. G. / Cui, G. / Vijayamohanan, K. / Lane, M. / Ramanath, G. et al. | 2005
- 332
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Process integration compatibility of low- and ultra-low- dielectricsMoore, Darren / Carter, Richard / Cui, Hao / Burke, Peter / McGrath, Peter / Gu, S. Q. / Gidley, David / Peng, Huagen et al. | 2005