Elementary excitations in semiconductors with n–i–p–i doping superlattices (English)
- New search for: Ruden, P.
- New search for: Ruden, P.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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1
, 2
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285-288
;
1983
- Article (Journal) / Electronic Resource
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Title:Elementary excitations in semiconductors with n–i–p–i doping superlattices
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Additional title:Elementary excitations
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Contributors:Ruden, P. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1983-04-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 1, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 119
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Summary Abstract: Recent developments in MBE and summary of the MBE conference in JapanCho, A. Y. et al. | 1983
- 120
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A review of recent advances in semiconductor superlatticesChang, L. L. et al. | 1983
- 126
-
Heterostructure bipolar transistors: What should we build?Kroemer, Herbert et al. | 1983
- 131
-
Use of molecular beam epitaxy in research and development of selected high speed compound semiconductor devicesEastman, Lester F. et al. | 1983
- 135
-
Growth of refractory oxide films using solid oxygen sources in a molecular beam epitaxy apparatusStall, R. A. et al. | 1983
- 138
-
Two‐stage arsenic cracking source with integral getter pump for MBE growthKrusor, B. S. / Bachrach, R. Z. et al. | 1983
- 142
-
On the possibility of MBE growth interface modification by hydrogenBachrach, R. Z. / Bringans, R. D. et al. | 1983
- 146
-
Substrate rotation‐induced compositional oscillation in molecular beam epitaxy (MBE)Alavi, K. / Petroff, P. M. / Wagner, W. R. / Cho, A. Y. et al. | 1983
- 149
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Summary Abstract: Segregation of As observed on clean, cleaved GaAs(110) surfacesBartels, F. / Clemens, H. J. / Mönch, W. et al. | 1983
- 150
-
Enhanced optical nonlinearities in superlatticesBloss, W. L. / Friedman, L. et al. | 1983
- 152
-
Optical properties of GaSb–AlSb superlatticesMendez, E. E. / Chang, C.‐A. / Takaoka, H. / Chang, L. L. / Esaki, L. et al. | 1983
- 155
-
AlAs–GaAs superlattices for optimum photoluminescence intensityLaidig, W. D. / Lee, J. W. / Wortman, J. J. / Littlejohn, M. A. et al. | 1983
- 158
-
Examination of MBE GaAs/Al0.3Ga0.7As superlattices by Auger electron spectroscopyErickson, L. Peter / Phillips, Bradway F. et al. | 1983
- 162
-
Autocompensation in molecular beam epitaxial gallium arsenide: The (110) orientationBallingall, J. M. / Wood, C. E. C. et al. | 1983
- 166
-
An investigation of GaAs films grown by MBE at low substrate temperatures and growth ratesMetze, G. M. / Calawa, A. R. / Mavroides, J. G. et al. | 1983
- 170
-
The growth of high quality Alx Ga1−xAs by molecular beam epitaxy and its application to double‐heterojunction lasersCollins, Douglas M. / Mars, Dan E. / Eglash, Stephen J. et al. | 1983
- 174
-
Lead–rare‐earth chalcogenides grown by molecular beam epitaxyPartin, Dale L. et al. | 1983
- 178
-
Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxySilberg, E. / Chang, T. Y. / Caridi, E. A. / Evans, C. A. / Hitzman, C. J. et al. | 1983
- 182
-
Molecular beam epitaxial growth of InGaAsPHolah, G. D. / Meeks, E. L. / Eisele, F. L. et al. | 1983
- 186
-
Design and fabrication of high transconductance modulation‐doped (Al,Ga)As/GaAs FETsLee, K. / Shur, M. S. / Drummond, T. J. / Su, S. L. / Lyons, W. G. / Fischer, R. / Morkoç, H. et al. | 1983
- 190
-
Temperature dependence of the I–V characteristics of modulation‐doped FETsValois, A. J. / Robinson, G. Y. / Lee, K. / Shur, M. S. et al. | 1983
- 196
-
The growth of thin, heavily doped layers for hot electron devicesHarris, J. J. / Woodcock, J. M. et al. | 1983
- 199
-
Growth of millimeter‐wave GaAs IMPATT structures by molecular beam epitaxyShih, H. D. / Bayraktaroglu, B. / Duncan, W. M. et al. | 1983
- 202
-
GaInAs–AlInAs heterostructures for optical devices grown by MBEWelch, D. F. / Wicks, G. W. / Woodard, D. W. / Eastman, L. F. et al. | 1983
- 217
-
Summary Abstract: A perspective in development of synthesized semiconductor superlatticesEsaki, L. et al. | 1983
- 218
-
A typical example of metastability: Metallic glassesDuwez, Pol et al. | 1983
- 222
-
The stabilization of metastable phases by epitaxyFarrow, R. F. C. et al. | 1983
- 229
-
A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductorsGreene, J. E. et al. | 1983
- 238
-
Liquid phase epitaxy of unstable alloys: Substrate‐induced stabilization and connected effectsQuillec, M. / Launois, H. / Joncour, M. C. et al. | 1983
- 243
-
A new type of order–disorder transition in metastable (GaAs)1−x Ge2x alloysNewman, Kathie E. / Dow, John D. et al. | 1983
- 246
-
Rutherford backscattering/channeling and transmission electron microscopy analysis of epitaxial BaF2 films on Ge and InPPhillips, J. M. / Feldman, L. C. / Gibson, J. M. / McDonald, M. L. et al. | 1983
- 250
-
Epitaxial growth of GaN/AlN heterostructuresYoshida, S. / Misawa, S. / Gonda, S. et al. | 1983
- 254
-
Thermal oxidation and anodic film–substrate reactions on Inx Ga1−x Asy P1−ySchwartz, G. P. / Dutt, B. V. / Malyj, M. / Griffiths, J. E. / Gualtieri, G. J. et al. | 1983
- 260
-
Summary Abstract: HgTe–CdTe superlatticesMcGill, T. C. / Smith, D. L. et al. | 1983
- 262
-
Low pressure‐MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlatticesRazeghi, M. / Duchemin, J. P. et al. | 1983
- 266
-
Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structuresIshiwara, H. / Asano, T. / Furukawa, S. et al. | 1983
- 272
-
Modulated structures and metastable dopant concentrations in silicon annealed with Q‐switched laser pulsesCullis, A. G. et al. | 1983
- 278
-
n‐i‐p‐i doping superlattices—metastable semiconductors with tunable propertiesDöhler, Gottfried H. et al. | 1983
- 285
-
Elementary excitations in semiconductors with n–i–p–i doping superlatticesRuden, P. et al. | 1983
- 289
-
Quantum transport in GaAs doping superlatticesMaan, J. C. / Englert, Th. / Uihlein, Ch. / Künzel, H. / Ploog, K. / Fischer, A. et al. | 1983
- 293
-
MBE growth of GaAs and III‐V alloysFoxon, C. T. et al. | 1983
- 298
-
Simulation models of the crystal–vapor interfaceGilmer, George H. / Broughton, Jeremy Q. et al. | 1983
- 305
-
Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo studySingh, Jasprit / Madhukar, Anupam et al. | 1983
- 313
-
Summary Abstract: Structure and luminescence of III–V compound superlatticesPetroff, P. M. et al. | 1983
- 314
-
Summary Abstract: The role of metastable surfaces in determining MBE heterojunction structure: GaAs/Ge interfacesBauer, Robert S. et al. | 1983
- 315
-
Structural studies of Ge–GaAs interfacesChang, Chin‐An / Kuan, Tung‐Sheng et al. | 1983
- 320
-
Measurement of potential at semiconductor interfaces by electron spectroscopyGrant, R. W. / Kraut, E. A. / Kowalczyk, S. P. / Waldrop, J. R. et al. | 1983
- 328
-
Chemical and structural analysis of the GaAs/AlGaAs heterojunctions by spectroscopic ellipsometryErman, M. / Theeten, J. B. / Vodjdani, N. / Demay, Y. et al. | 1983
- 334
-
Abrupt transitions in composition and doping profile in GaAs–Ga1−xAlxAs heterostructures by atmospheric pressure MOVPEMaluenda, J. / Frijlink, P. M. et al. | 1983
- 338
-
Characterization of thin layers on perfect crystals with a multipurpose high resolution x‐ray diffractometerBartels, W. J. et al. | 1983
- 346
-
Channeling studies of III–V/III–V and IV/III–V semiconductor modulated structuresChang, Chin‐An et al. | 1983
- 353
-
Summary Abstract: Molecular beam growth of metal layers on silicon surfacesKawazu, Akira et al. | 1983
- 354
-
Electronic and atomic structure of Ag–Si(111) and Ag–Ge(111)Le Lay, G. et al. | 1983
- 361
-
Initial growth of Al on GaAs(001) and electrical characterization of the interfaceAndersson, Thorwald G. / Svensson, Stefan P. / Landgren, Gunnar et al. | 1983
- 365
-
Interfacial studies of deposited thin films of refractory metals on gallium arsenide substrates. Mo–GaAsSuh, K. / Park, H. K. / Moazed, K. L. et al. | 1983
- 371
-
Transverse elastic waves in periodically layered infinite, semi‐infinite, and slab mediaCamley, R. E. / Djafari‐Rouhani, B. / Dobrzynski, L. / Maradudin, A. A. et al. | 1983
- 376
-
A new infrared detector using electron emission from multiple quantum wellsSmith, J. S. / Chiu, L. C. / Margalit, S. / Yariv, A. / Cho, A. Y. et al. | 1983
- 379
-
Electronic properties of strained‐layer superlatticesOsbourn, G. C. et al. | 1983
- 383
-
Ga(As,P) strained‐layer superlattices: A ternary semiconductor with independently adjustable band gap and lattice constantGourley, P. L. / Biefeld, R. M. et al. | 1983
- 387
-
Doping and transport studies in InxGa1−xAs/GaAs strained‐layer superlatticesFritz, I. J. / Dawson, L. R. / Zipperian, T. E. et al. | 1983
- 391
-
Energy levels of hydrogenic impurities and Wannier excitons in quantum well structuresGreene, Ronald L. / Bajaj, K. K. et al. | 1983
- 398
-
Formation of silicon nitride layers on crystalline silicon by ion implantation as revealed by internal friction and infrared transmission measurementsOgale, A. S. / Bhoraskar, V. N. / Ghaisas, S. V. / Godbole, V. P. / Ogale, S. B. / Raye, B. S. et al. | 1983
- 401
-
Fermi‐level pinning at heterojunctionsAllen, Roland E. / Beres, Richard P. / Dow, John D. et al. | 1983
- 404
-
Electronic properties of MO–CVD grown InGaAs–InP heterojunctions and superlatticesVoos, M. et al. | 1983
- 409
-
Optical transmission in GaSb–AlSb superlatticesVoisin, P. / Bastard, G. / Voos, M. / Mendez, E. E. / Chang, C.‐A. / Chang, L. L. / Esaki, L. et al. | 1983
- 412
-
Plasma oscillations of layered electron gases in semiconductor heterostructuresOlego, D. / Pinczuk, A. / Gossard, A. C. / Wiegmann, W. et al. | 1983
- 415
-
A simple model for the index of refraction of GaAs–AlAs superlattices and heterostructure layers: Contributions of the states around ΓLeburton, J. P. / Hess, K. et al. | 1983
- 420
-
Persistent red shift of the photoluminscence from the semi‐insulating GaAs substrate in an AlxGa1−xAs/GaAs modulation‐doped structureFischer, Bernhard / Collins, Douglas M. et al. | 1983
- 423
-
Observation of the deHaas–van Alphen effect in a two‐dimensional electron systemStörmer, H. L. / Haavasoja, T. / Narayanamurti, V. / Gossard, A. C. / Wiegmann, W. et al. | 1983
- 427
-
Cyclotron resonance of 2D electrons in GaAs/AlxGa1−xAs heterostructures at low densitiesEnglert, Th. / Maan, J. C. / Uihlein, Ch. / Tsui, D. C. / Gossard, A. C. et al. | 1983
- 431
-
Collective plasmon modes of a semiconductor superlatticeBloss, W. L. et al. | 1983
- 435
-
Interference effect in multivalley quantum well structuresChang, Yia‐Chung / Ting, D. Z.‐Y. et al. | 1983
- 439
-
Tunneling and propagating transport in GaAs–Ga1−xAlxAs–GaAs(100) double heterojunctionsMailhiot, C. / McGill, T. C. / Schulman, J. N. et al. | 1983
- 445
-
Effects of band bending on real space transfer in GaAs–AlxGa1−xAs layered heterostructuresLittlejohn, M. A. / Kwapien, W. M. / Glisson, T. H. / Hauser, J. R. / Hess, K. et al. | 1983
- 449
-
Electron transport in planar‐doped barrier structures using an ensemble Monte Carlo methodLittlejohn, M. A. / Trew, R. J. / Hauser, J. R. / Golio, J. M. et al. | 1983
- 455
-
Summary Abstract: Compound semiconductor structures for high speed, high frequency devicesEastman, Lester F. et al. | 1983
- 456
-
Summary Abstract: Electrical properties of MBE‐grown GaAs/N–AlGaAs heterostructures and application to high speed devicesHiyamizu, S. / Mimura, T. et al. | 1983
- 457
-
Band‐gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devicesCapasso, Federico et al. | 1983
- 462
-
Growth, characterization, and properties of metastable and modulated semiconductor structures: Prospects for future studiesGrunthaner, F. J. / Madhukar, A. et al. | 1983
- 469
-
Surface processes in plasma‐assisted etching environmentsWinters, Harold F. / Coburn, J. W. / Chuang, T. J. et al. | 1983
- 481
-
Ultrahigh molecular weight poly(methyl methacrylate) as an electron‐beam resistGavens, L. M. / Wu, B. J. / Hess, D. W. / Bell, A. T. / Soong, D. S. et al. | 1983
- 487
-
Planarizing of phosphosilicate glass films on patterned silicon wafersJohnson, L. F. / Ingersoll, K. A. / Dalton, J. V. et al. | 1983
- 490
-
Lift‐off process for achieving fine‐line metallizationMilgram, A. A. et al. | 1983
- 494
-
Metal on polymer ion implantation maskTennant, D. M. et al. | 1983
- 497
-
A UHV‐compatible round wafer heater for silicon molecular beam epitaxyFinegan, S. N. / Swartz, R. G. / McFee, J. H. et al. | 1983
- 501
-
End‐point detection and etch‐rate measurement during reactive‐ion etching using fluorescent polymer filmsKolodner, Paul / Katzir, A. / Hartsough, Neal et al. | 1983
- 505
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Erratum: Temperature profiles in solid targets irradiated with finely focused beams [J. Vac. Sci. Technol. B 1, 91 (1983)]Iranmanesh, Ali A. / Pease, R. F. W. et al. | 1983