Reordering of polycrystalline Pd2Si on epitaxial Pd2Si (English)
National licence
- New search for: Comrie, C. M.
- New search for: Liu, J. C.
- New search for: Hung, L. S.
- New search for: Mayer, J. W.
- New search for: Comrie, C. M.
- New search for: Liu, J. C.
- New search for: Hung, L. S.
- New search for: Mayer, J. W.
In:
Journal of Applied Physics
;
63
, 7
;
2402-2405
;
1988
- Article (Journal) / Electronic Resource
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Title:Reordering of polycrystalline Pd2Si on epitaxial Pd2Si
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Contributors:
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Published in:Journal of Applied Physics ; 63, 7 ; 2402-2405
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Publisher:
- New search for: American Institute of Physics
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Publication date:1988-04-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 63, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2187
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A closer look at the effect of lens aberrations and object size on the intensity distribution and resolution in electron opticsRempfer, Gertrude F. / Mauck, Michael S. et al. | 1988
- 2200
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Bistability and intensity noise of semiconductor lasers due to weak optical feedbackSato, Hisanao / Matsui, Yasushi / Ohya, Jun / Serizawa, Hiroyuki et al. | 1988
- 2206
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Lasers pumped by ion beamsUlrich, A. / Hammer, J. W. / Biermayer, W. et al. | 1988
- 2212
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Laser heating and melting of thin films with time‐dependent absorptance: An exact solution for time intervals less than or equal to the transit timeEl‐Adawi, M. K. / Shalaby, S. A. et al. | 1988
- 2217
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Experimental verification of beta‐decay‐driven sublimation in deuterium‐tritium ice held in spherical fusion targetsMruzek, M. T. / Musinski, D. L. / Ankney, J. S. et al. | 1988
- 2221
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Functional dependencies of the Cu XXVIII line power output coincident with a nuclear transition in 169TmCoulter, M. C. / Apruzese, J. P. / Kepple, P. C. et al. | 1988
- 2226
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An experimental study of a parallel‐plate radio‐frequency discharge: Measurements of the radiation temperature and electron densityHebner, G. A. / Verdeyen, J. T. / Kushner, M. J. et al. | 1988
- 2237
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Hollow‐anode discharge with axial‐magnetic field as an electron beam sourceMiljevic´, Vujo I. et al. | 1988
- 2241
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Monte Carlo simulation of ion transport through rf glow‐discharge sheathsThompson, Brian E. / Sawin, Herbert H. / Fisher, Donald A. et al. | 1988
- 2252
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Crystallographic properties and optical energy gap values for (CuIn)x(AgIn)yCd2zTe2 alloysGuerrero, Eunice / Quintero, Miguel / Woolley, J. C. et al. | 1988
- 2257
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Mixing of Pt‐Rene´ N4 alloy under Pt+ bombardmentSrinivasan, V. / Bhattacharya, R. S. et al. | 1988
- 2260
-
Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon filmsHatalis, Miltiadis K. / Greve, David W. et al. | 1988
- 2267
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Phase transitions in Ru based thick‐film (cermet) resistorsMorten, B. / Prudenziati, M. / Sacchi, M. / Sirotti, F. et al. | 1988
- 2272
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Growth kinetics and step density in reflection high‐energy electron diffraction during molecular‐beam epitaxyClarke, Shaun / Vvedensky, Dimitri D. et al. | 1988
- 2284
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Growth behavior during nonplanar metalorganic vapor phase epitaxyDemeester, P. / Van Daele, P. / Baets, R. et al. | 1988
- 2291
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Measurements of hydrogen in metal‐oxide‐semiconductor structures using nuclear reaction profilingMarwick, A. D. / Young, D. R. et al. | 1988
- 2299
-
Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxyPetruzzello, J. / Greenberg, B. L. / Cammack, D. A. / Dalby, R. et al. | 1988
- 2304
-
Characterization of tungsten‐related deep levels in bulk silicon crystalFujisaki, Yoshihisa / Ando, Toshio / Kozuka, Hirotsugu / Takano, Yukio et al. | 1988
- 2307
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Metastable carrier concentration in GaAs/GaAlAs heterostructure under hydrostatic pressureSuski, T. / Litwin‐Staszewska, E. / Wis´niewski, P. / Dmowski, L. / Zhuang, W. H. / Liang, G. B. / Sun, D. Z. / Zhen, Y. P. et al. | 1988
- 2311
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Field‐induced transition in the conductivity mechanism of polycrystalline silicon filmsAda‐Hanifi, M. / Sicart, J. / Dusseau, J. M. / Robert, J. L. et al. | 1988
- 2316
-
Trapping time in processed polycrystalline silicon measured by picosecond time‐resolved reflectivityBambha, N. K. / Nighan, W. L. / Campbell, I. H. / Fauchet, P. M. / Johnson, N. M. et al. | 1988
- 2322
-
Electron energy distributions, transport parameters, and rate coefficients in GaAsCheng, M. / Kunhardt, E. E. et al. | 1988
- 2331
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Thermoelectric properties of lanthanum sulfide with Sm, Eu, and Yb additivesNakahara, J. F. / Takeshita, T. / Tschetter, M. J. / Beaudry, B. J. / Gschneidner, K. A. et al. | 1988
- 2337
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Complex plane analysis of trapping phenomena in zinc oxide based varistor grain boundariesAlim, Mohammad A. / Seitz, Martin A. / Hirthe, Richard W. et al. | 1988
- 2346
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Characterization of a‐Si1−xCx:H/a‐Si:H and a‐SiN:H/a‐Si:H heterojunctions by photothermal deflection spectroscopyAsano, A. / Ichimura, T. / Uchida, Y. / Sakai, H. et al. | 1988
- 2352
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Niobium‐stress influence on Nb/Al‐oxide/Nb Josephson junctionsKuroda, Kenichi / Yuda, Masahiro et al. | 1988
- 2358
-
Magneto‐mechanical damping at low temperatures in purified ironGovaer, D. / Beshers, D. N. et al. | 1988
- 2364
-
Thermomagnetic switching in amorphous rare‐earth transition‐metal alloys with high compensation temperatureHansen, P. et al. | 1988
- 2372
-
Ferromagnetic resonance of thin yttrium iron garnet films near a ground plane: Parallel fieldBarak, J. / Ruppin, R. / Suss, J. T. et al. | 1988
- 2378
-
Photoluminescence characteristics of undoped and terbium chloride doped zinc oxide films deposited by spray pyrolysisFalcony, C. / Ortiz, A. / Garci´a, M. / Helman, J. S. et al. | 1988
- 2382
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The automatic determination of cadmium‐mercury telluride compositionMicklethwaite, W. F. H. et al. | 1988
- 2391
-
Transient thermoreflectance of thin metal films in the picosecond regimeMiklo´s, Andra´s / Lo˝rincz, Andra´s et al. | 1988
- 2396
-
Optical studies of Cd0.9Mn0.1Te doped with Au, As, Cu, and P acceptorsMisiewicz, J. / Becla, P. / Isaacs, E. D. / Wolff, P. A. / Heiman, D. / Ram‐Mohan, L. R. / Wrobel, J. M. et al. | 1988
- 2402
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Reordering of polycrystalline Pd2Si on epitaxial Pd2SiComrie, C. M. / Liu, J. C. / Hung, L. S. / Mayer, J. W. et al. | 1988
- 2406
-
Neutral radical deposition from silane dischargesGallagher, Alan et al. | 1988
- 2414
-
Annealing behavior of refractory metal multilayers on Si: The Mo/Ti and W/Ti systemsPuppin, E. / Krishnamurthy, V. / Helms, C. R. et al. | 1988
- 2420
-
Chemical treatment and Fermi‐level pinning of CuInS2 and InP photocathodesLewerenz, H. J. / Goslowsky, H. et al. | 1988
- 2425
-
Optical charge injection into a gallium arsenide acoustic charge transport deviceBeggs, B. C. / Young, L. / Johnson, R. R. et al. | 1988
- 2431
-
Field‐effect transistor using a solid electrolyte as a new oxygen sensorMiyahara, Yuji / Tsukada, Keiji / Miyagi, Hiroyuki et al. | 1988
- 2435
-
The cutoff wavelength and minority‐carrier lifetime in implanted n+‐on‐bulk p Hg1−xCdxTe photodiodesNemirovsky, Y. / Rosenfeld, D. et al. | 1988
- 2440
-
Observation of optical radiation in the negative differential resistance region of optoelectronic triangular barrier switchMand, Ranjit S. / Nakamura, Masaru et al. | 1988
- 2443
-
The effects of the glass substrate on the properties of rf glow discharge amorphous Si:H thin filmsKoo, Y.C. / Perrin, R. / Aust, K. T. / Zukotynski, S. / Kruzelecky, R. V. et al. | 1988
- 2445
-
Microhardness and plastically deformed regions in CdS single crystalsGoto, Fumiaki / Kudo, Shigeo et al. | 1988
- 2447
-
Magnetic anisotropy in rf sputtered Tb‐Fe filmsKrishnan, R. / Porte, M. / Tessier, M. / Vitton, J. P. / Le Cars, Y. et al. | 1988
- 2449
-
Ion mixing and thermochemical properties of tracers in AgMa, E. / Kim, S.‐J. / Nicolet, M.‐A. / Averback, R. S. et al. | 1988
- 2452
-
Metastable bismuth‐iron alloy films synthesized with ion mixing and magnetron cosputteringChen, Qing‐Ming / Cui, Fu‐Zai / Fan, Yu‐Dian / Li, Heng‐De et al. | 1988
- 2454
-
Sealed‐ampoule diffusion of zinc into Ga1−xAlxAs at 650 °CQuintana, V. / Clemencon, J. J. / Chin, A. K. et al. | 1988
- 2456
-
Semiclassical derivation of Handel’s expression for the Hooge parametervan der Ziel, Aldert et al. | 1988
- 2458
-
Capacitance and conduction properties of semi‐insulating polycrystalline silicon filmsBlack, R. D. et al. | 1988
- 2460
-
An optically controlled closing and opening semiconductor switchSchoenbach, K. H. / Lakdawala, V. K. / Germer, R. / Ko, S. T. et al. | 1988
- 2463
-
Anisotropic plasma‐chemical etching by an electron‐beam‐generated plasmaVerhey, T. R. / Rocca, J. J. / Boyer, P. K. et al. | 1988
- 2466
-
Dielectric measurements on substrate materials at microwave frequencies using a cavity perturbation techniqueDube, D. C. / Lanagan, M. T. / Kim, J. H. / Jang, S. J. et al. | 1988
- 2469
-
Turn‐on delay time fluctuations in gain‐switched AlGaAs/GaAs multiple‐quantum‐well lasersBo¨ttcher, E. H. / Ketterer, K. / Bimberg, D. et al. | 1988