Adsorption and decomposition of diethylgermane on Si(111) 7×7 (English)
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- New search for: Coon, P. A.
- New search for: Wise, M. L.
- New search for: Walker, Z. H.
- New search for: George, S. M.
- New search for: Roberts, D. A.
- New search for: Coon, P. A.
- New search for: Wise, M. L.
- New search for: Walker, Z. H.
- New search for: George, S. M.
- New search for: Roberts, D. A.
In:
Applied Physics Letters
;
60
, 16
;
2002-2004
;
1992
- Article (Journal) / Electronic Resource
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Title:Adsorption and decomposition of diethylgermane on Si(111) 7×7
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Contributors:Coon, P. A. ( author ) / Wise, M. L. ( author ) / Walker, Z. H. ( author ) / George, S. M. ( author ) / Roberts, D. A. ( author )
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Published in:Applied Physics Letters ; 60, 16 ; 2002-2004
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Publisher:
- New search for: American Institute of Physics
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Publication date:1992-04-20
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 60, Issue 16
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1921
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Circularly symmetric operation of a concentric‐circle‐grating, surface‐ emitting, AlGaAs/GaAs quantum‐well semiconductor laserErdogan, T. / King, O. / Wicks, G. W. / Hall, D. G. / Anderson, Erik H. / Rooks, M. J. et al. | 1992
- 1924
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Wide‐band Bragg reflectors made with silica on silicon waveguidesAdar, R. / Henry, C. H. / Kistler, R. C. / Kazarinov, R. F. / Weiner, J. S. et al. | 1992
- 1927
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Low threshold, 633 nm, single tensile‐strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laserBour, D. P. / Treat, D. W. / Thornton, R. L. / Paoli, T. L. / Bringans, R. D. / Krusor, B. S. / Geels, R. S. / Welch, D. F. / Wang, T. Y. et al. | 1992
- 1930
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Effect of state filling on the modulation response and the threshold current of quantum well lasersZhao, B. / Chen, T. R. / Yariv, A. et al. | 1992
- 1933
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New method of measuring second harmonic generation efficiency using powder crystalsKiguchi, M. / Kato, M. / Okunaka, M. / Taniguchi, Y. et al. | 1992
- 1936
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Compatible laser emission and optical waveguide modulation at 1.5 μm using Wannier–Stark localizationBigan, E. / Harmand, J. C. / Allovon, M. / Carre´, M. / Carenco, A. / Voisin, P. et al. | 1992
- 1939
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High current and directional electron beams produced from gold photocathodes by ultrashort excimer laser pulsesMoustaizis, S. D. / Tatarakis, M. / Kalpouzos, C. / Fotakis, C. et al. | 1992
- 1942
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Study of silicon‐hydrogen bonds at an amorphous silicon/silicon nitride interface using infrared attenuated total reflection spectroscopyMatsumoto, Tomotaka / Murata, Yuji / Watanabe, Jun‐ichi et al. | 1992
- 1945
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Linewidth dependence of notchlike void generation in fine aluminum conductorsYamaji, Tetsuo / Igarashi, Yasushi / Nishikawa, Satoshi et al. | 1992
- 1948
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Massive thinning of diamond films by a diffusion processJin, S. / Graebner, J. E. / Kammlott, G. W. / Tiefel, T. H. / Kosinski, S. G. / Chen, L. H. / Fastnacht, R. A. et al. | 1992
- 1951
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Epitaxial growth of double hexagonal close‐packed Nd on the α‐Fe (111) surfaceCheng, Yang‐Tse / Chen, Yen‐Lung et al. | 1992
- 1954
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Boundary layer elasto‐optic switching in ferroelectric liquid crystalsParmar, D. S. et al. | 1992
- 1957
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Enhancement of sp3/sp2 ratio in plasma deposited amorphous hydrogenated carbon films by the addition of ammoniaSeth, Jayshree / Ward, Anthony J. I. / Babu, S. V. et al. | 1992
- 1960
-
Atomic‐scale manipulation in air with the scanning tunneling microscopeGarci´a Garci´a, Ricardo et al. | 1992
- 1963
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Si‐implanted InGaP/GaAs metal‐semiconductor field‐effect transistorsHyuga, Fumiaki / Aoki, Tatsuo / Sugitani, Suehiro / Asai, Kazuyoshi / Imamura, Yoshihiro et al. | 1992
- 1966
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Residue‐free reactive ion etching of β‐SiC in CHF3/O2 with H2 additiveSteckl, A. J. / Yih, P. H. et al. | 1992
- 1969
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Electroabsorption in the type II superlatticesLi, Shaozhong / Khurgin, Jacob B. et al. | 1992
- 1972
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Far‐infrared capture of electrons by DX centersPlombon, J. J. / Bewley, W. W. / Felix, C. L. / Sherwin, M. S. / Hopkins, P. / Sundaram, M. / Gossard, A. C. et al. | 1992
- 1975
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Observation of stable room‐temperature photoconductivity in hydrogenated amorphous silicon following long term light soakingXi, J. / Macneil, J. / Liu, T. / Ghosh, M. et al. | 1992
- 1978
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Raman spectra of individual Si thin layers with 4–40 atomic layer thicknesses buried in GaAs (001)Tanino, H. / Kawanami, H. / Matsuhata, H. et al. | 1992
- 1981
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Optical transitions and chemistry at the In0.52Al0.48As/InP interfaceBrasil, M. J. S. P. / Nahory, R. E. / Quinn, W. E. / Tamargo, M. C. / Farrell, H. H. et al. | 1992
- 1984
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Oxygen assisted ohmic contact formation mechanism to n‐type GaAsLustig, Naftali / Schad, R. G. et al. | 1992
- 1987
-
Evidence for facets with 〈210〉 azimuth in molecular beam epitaxial growth on patterned GaAs(001) substratesBenisty, H. / Bo¨ckenhoff, E. / Talneau, A. et al. | 1992
- 1990
-
Carbon redistribution during molecular beam epitaxy of GaAs n‐i‐p+‐i‐n structures using trimethylgallium as the p‐type dopantHo¨fler, G. E. / Baillargeon, J. N. / Hsieh, K. C. / Cheng, K. Y. et al. | 1992
- 1993
-
Effect of spatial correlation of DX centers on the mobility in heavily doped n‐type GaAsMaude, D. K. / Eaves, L. / Portal, J. C. et al. | 1992
- 1996
-
Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmasLi, P. W. / Wang, Q. / Yang, E. S. et al. | 1992
- 1999
-
Room temperature blue light emitting p‐n diodes from Zn(S,Se)‐based multiple quantum well structuresXie, W. / Grillo, D. C. / Gunshor, R. L. / Kobayashi, M. / Jeon, H. / Ding, J. / Nurmikko, A. V. / Hua, G. C. / Otsuka, N. et al. | 1992
- 2002
-
Adsorption and decomposition of diethylgermane on Si(111) 7×7Coon, P. A. / Wise, M. L. / Walker, Z. H. / George, S. M. / Roberts, D. A. et al. | 1992
- 2005
-
Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxyYin, L.‐W. / Ibbetson, J. P. / Hashemi, M. M. / Gossard, A. C. / Mishra, U. K. / Hwang, Y. / Zhang, T. / Kolbas, R. M. et al. | 1992
- 2008
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Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devicesFleetwood, D. M. / Reber, R. A. / Winokur, P. S. et al. | 1992
- 2011
-
Double wavelength selective GaAs/AlGaAs infrared detector deviceKo¨ck, A. / Gornik, E. / Abstreiter, G. / Bo¨hm, G. / Walther, M. / Weimann, G. et al. | 1992
- 2014
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Tl2Ba2CaCu2O8 films with very low microwave surface resistance up to 95 KHolstein, W. L. / Parisi, L. A. / Wilker, C. / Flippen, R. B. et al. | 1992
- 2017
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Experiments on the interaction between long Josephson junctions and a coplanar strip resonatorDavidson, A. / Pedersen, N. F. et al. | 1992
- 2020
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Superconducting and optical properties of ultrathin films of Bi2(Sr,Ca)3Cu2Ox formed at 673 KYanase, Akihisa / Mori, Masami / Liu, Ziyuan / Kawai, Maki et al. | 1992
- 2023
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In situ fabrication of superconducting Lu‐Ba‐Sr‐Cu‐O films by pulsed‐laser depositionSchwab, P. / Wang, X. Z. / Bauerle, D. et al. | 1992
- 2026
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55 GHz microstrip bandpass filter made from YBa2Cu3O7−x superconductor thin filmGergis, I. S. / Cheung, J. T. / Trinh, T. N. / Sovero, E. A. / Kobrin, P. H. et al. | 1992
- 2029
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Mechanically alloyed and gas‐phase carbonated highly coercive Sm2Fe17CxKuhrt, C. / Katter, M. / Wecker, J. / Schnitzke, K. / Schultz, L. et al. | 1992
- 2032
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Erratum: Phase‐matching retracing behavior: New features in LiB3O5 [Appl. Phys. Lett. 59, 1541 (1991)]Lin, Shujie / Wu, Baichang / Xie, Fali / Chen, Chuangtian et al. | 1992