The effect of rf power on reactively sputtered zinc oxide (English)
National licence
- New search for: Aita, C. R.
- New search for: Lad, R. J.
- New search for: Tisone, T. C.
- New search for: Aita, C. R.
- New search for: Lad, R. J.
- New search for: Tisone, T. C.
In:
Journal of Applied Physics
;
51
, 12
;
6405-6410
;
1980
- Article (Journal) / Electronic Resource
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Title:The effect of rf power on reactively sputtered zinc oxide
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Contributors:
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Published in:Journal of Applied Physics ; 51, 12 ; 6405-6410
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Publisher:
- New search for: American Institute of Physics
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Publication date:1980-12-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 51, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 6055
-
Release wave calibration of manganin gaugesYaziv, D. / Rosenberg, Z. / Partom, Y. et al. | 1980
- 6058
-
Analysis of the pressure, density, and velocity distributions in a spectroscopic heat‐pipe oven and the resulting limitations on device performanceBoyd, Robert W. / Dodd, Jack G. et al. | 1980
- 6062
-
Determination of fuel density‐radius product of inertial confinement fusion targets by neutron activationCampbell, E. M. / Lane, S. M. / Pan, Y. L. / Larsen, J. T. / Wahl, R. J. / Price, R. H. et al. | 1980
- 6065
-
Use of a radioactive tracer to determine the fraction of fusion target debris collectedCampbell, E. M. / Hicks, H. G. / Mead, W. C. / Coleman, L. M. / Hatcher, C. W. / Dellis, J. H. / Boyle, M. J. / Larsen, J. T. / Lane, S. M. et al. | 1980
- 6068
-
Collective acceleration of electrons using an autoacceleration processLockner, Thomas R. / Friedman, Moshe et al. | 1980
- 6075
-
Polarization characteristics of dye‐laser amplifiers I. Unidirectional molecular distributionsReyzer, Kendall C. / Casperson, Lee W. et al. | 1980
- 6083
-
Polarization characteristics of dye‐laser amplifiers II. Isotropic molecular distributionsReyzer, Kendall C. / Casperson, Lee W. et al. | 1980
- 6091
-
Pumping mechanism of mercury‐ion laserNinomiya, H. / Osumi, H. / Horiguchi, S. et al. | 1980
- 6095
-
Calculated absorption, emission, and gain in In0.72Ga0.28As0.6P0.4Dutta, N. K. et al. | 1980
- 6101
-
Large aperture stark modulated retroreflector at 10.8 μmKlein, M. B. / Sipman, R. H. et al. | 1980
- 6105
-
On the theory of the prism waveguide coupler in the strong coupling regimeSarid, Dror / Kermisch, Dorian / Revelli, Joseph et al. | 1980
- 6107
-
Jet formation experiments and computations with a Lagrange codevan Thiel, M. / Levatin, JoAnne et al. | 1980
- 6115
-
The photoacoustic effect at first‐order phase transitionKorpiun, P. / Tilgner, R. et al. | 1980
- 6120
-
Hard‐x‐ray spectrum from a single‐electron‐temperature laser plasma modelColombant, D.G. / Manheimer, W.M. et al. | 1980
- 6124
-
Multichannel discharges in low‐pressure rare‐gas–mercury mixtures caused by anode oscillationWatanabe, Yoshio / Yamane, Mikiya et al. | 1980
- 6130
-
Spherical shock development near laser‐heated microshell targetsLeonard, Thomas A. / Hammerling, Peter et al. | 1980
- 6134
-
Cutoff frequencies of intermediate frequency waves in a bounded magnetoplasmaBasu, J. / Das, S. K. et al. | 1980
- 6141
-
Low‐current electric discharges in H2‐He mixturesMuller, C. H. / Phelps, A. V. et al. | 1980
- 6149
-
Polar and nonpolar contributions to liquid‐crystal orientations on substratesNaemura, Shohei et al. | 1980
- 6160
-
The mechanism of growth of quartz crystals into fused silicaFratello, V. J. / Hays, J. F. / Spaepen, F. / Turnbull, D. et al. | 1980
- 6165
-
Field‐dependent grain‐boundary diffusion in polycrystalline materialSaha, H. / Mukhopadhyaya, K. et al. | 1980
- 6169
-
Study of buried silicon nitride layers synthesized by ion implantationBourguet, P. / Dupart, J. M. / Le Tiran, E. / Auvray, P. / Guivarc’h, A. / Salvi, M. / Pelous, G. / Henoc, P. et al. | 1980
- 6176
-
An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsChristel, L. A. / Gibbons, J. F. / Mylroie, S. et al. | 1980
- 6183
-
The ’’inhibition effect’’ of a trichloroethane oxidation to suppress the stacking‐fault nucleation in siliconClaeys, C. L. / Declerck, G. J. / Van Overstraeten, R. J. et al. | 1980
- 6189
-
Surface segregation of Ni‐Cu alloy in nitrogen and oxygen: An atom‐probe field‐ion microscope studyTsong, T. T. / Ng, Yee S. / McLane, S. B. et al. | 1980
- 6192
-
Low‐flux radiation‐induced precipitationBarbu, A. / Martin, G. / Chamberod, A. et al. | 1980
- 6197
-
Stress‐enhanced crystallization in amorphous selenium filmsStephens, R. B. et al. | 1980
- 6202
-
Effect of hydrogen on the temperature dependence of the elastic constants of palladium single crystalsSalama, K. / Ko, C. R. et al. | 1980
- 6210
-
Quantitative studies of thermally generated elastic waves in laser‐irradiated metalsScruby, C. B. / Dewhurst, R. J. / Hutchins, D. A. / Palmer, S. B. et al. | 1980
- 6217
-
The effect of noncrystallinity on the α→ε transition of Fe85B14Si1 alloyDunn, K. J. / Bundy, F. P. / Walter, J. L. et al. | 1980
- 6221
-
Estimation of uncertainty in isotherms deduced from Hugoniots resulting from shockwave generated defectsRuoff, Arthur L. et al. | 1980
- 6224
-
Automatic x‐ray diffraction measurement of the lattice curvature of substrate wafers for the determination of linear strain patternsSegmu¨ller, Armin / Angilelo, J. / La Placa, Sam J. et al. | 1980
- 6231
-
Observation of the tin whisker by micro‐Auger electron spectroscopyFujiwara, Kenzo / Kawanaka, Ryusuke et al. | 1980
- 6233
-
Admittance spectroscopy of deep levels in Hg1−xCdxTePolla, D. L. / Jones, C. E. et al. | 1980
- 6238
-
Chemical identification of deep energy levels in Si:SeGrimmeiss, H. G. / Janze´n, E. / Skarstam, B. / Lodding, A. et al. | 1980
- 6243
-
Electrical and optical properties of undoped and antimony‐doped tin oxide filmsShanthi, E. / Dutta, V. / Banerjee, A. / Chopra, K. L. et al. | 1980
- 6252
-
Thermal generation of carriers in gold‐doped siliconRichou, F. / Pelous, G. / Lecrosnier, D. et al. | 1980
- 6258
-
Discharge of trapped electrons from MOS structuresYamabe, K. / Miura, Y. et al. | 1980
- 6265
-
An alternative approach to charge transport in semiconducting electrodesThomchick, John / Buoncristiani, A. M. et al. | 1980
- 6273
-
Energy and electric field dependence of Si‐SiO2 interface state parameters by optically activated admittance experimentsPoon, T. C. / Card, H. C. et al. | 1980
- 6279
-
Electrical analysis methods for metal insulator semiconductor structures on GaAsSchuermeyer, Fritz L. / Hartnagel, Hans L. et al. | 1980
- 6286
-
Surface charge and specific ion adsorption effects in photoelectrochemical devicesSingh, P. / Singh, R. / Gale, R. / Rajeshwar, K. / DuBow, J. et al. | 1980
- 6292
-
A study of oxide traps and interface states of the silicon‐silicon dioxide interfaceStivers, A. R. / Sah, C. T. et al. | 1980
- 6305
-
The plasma resonance in the response and in the rf impedance of a capacitively shunted Josephson junction in the presence of thermal noisePoorter, T. / Tolner, H. et al. | 1980
- 6319
-
Magnetic and thermal anomalies of Invar alloysMatsui, M. / Adachi, K. / Chikazumi, S. et al. | 1980
- 6326
-
Dispersive optical constants of amorphous Se1−xTex filmsAdachi, Hiroshi / Kao, Kwan C. et al. | 1980
- 6332
-
Composition dependence of Nd3+ homogeneous linewidths in glassesPellegrino, J. M. / Yen, W. M. / Weber, M. J. et al. | 1980
- 6337
-
Photoluminescence of Ge‐doped AlxGa1−xAs grown by liquid phase epitaxyKaneko, Kunio / Ayabe, Masaaki et al. | 1980
- 6342
-
Further investigation of the 1.4‐eV luminescence in solution‐grown CdTe:InNorris, C. B. et al. | 1980
- 6348
-
Electromigration of liquid gallium inclusions in siliconAnthony, T. R. et al. | 1980
- 6356
-
The electromigration of liquid metal inclusions in SiAnthony, T. R. et al. | 1980
- 6366
-
Electron diffraction study of newly discovered nickel phosphides in partially crystallized amorphous electrodeposited Ni‐P thin filmsVafaei‐Makhsoos, E. et al. | 1980
- 6377
-
Oxide growth in an rf plasmaFromhold, A. T. / Baker, John M. et al. | 1980
- 6393
-
Physical structure of Al‐pSi metal‐insulator semiconductor solar cellsOlsen, L. C. / Barton, D. L. / Miller, W. / Garnier, J. E. / Turcotte, R. P. et al. | 1980
- 6399
-
The operation of the semiconductor‐insulator‐semiconductor solar cell: Barrier height lowering through interface statesSpitzer, M. / Shewchun, J. / Burk, D. et al. | 1980
- 6405
-
The effect of rf power on reactively sputtered zinc oxideAita, C. R. / Lad, R. J. / Tisone, T. C. et al. | 1980
- 6411
-
Interference with negative particle sampling due to formation of positive ions in a quadrupole mass spectrometerKuehn, D. G. / Chanin, L. M. et al. | 1980
- 6413
-
Mode locking a diode laserJohnson, L. F. et al. | 1980
- 6415
-
Transient spectra in transverse‐mode stabilized GaAlAs double‐heterostructure lasersHanamitsu, K. / Ishikawa, H. / Nishi, H. / Takusagawa, M. et al. | 1980
- 6418
-
Inelastic scattering of ultrasoundMorris, J. R. et al. | 1980
- 6419
-
Evidence for mixed clusters formed during sulfur hexafluoride expansions in an argon carrier gasKim, Sang Soo / Stein, Gilbert D. et al. | 1980
- 6422
-
Vidicon target of a p‐i‐n structure using a‐Si:HShimizu, Isamu / Oda, Shunri / Saito, Keishi / Inoue, Eiichi et al. | 1980
- 6424
-
Compound formation between amorphous silicon and chromiumYacobi, B.G. / Szadkowski, A.J. / Zukotynski, S. / Corbett, J.M. et al. | 1980
- 6426
-
The generation of electron‐hole pairs in very thin solar cells possessing an optical back‐surface reflectorvon Roos, Oldwig et al. | 1980
- 6429
-
Recombination mechanisms in amorphous silicon‐based alloysAdler, D. / Silver, M. / Madan, A. / Czubatyj, W. et al. | 1980
- 6432
-
Bias‐dependent photoluminescence intensities in n‐InP Schottky diodesAndo, Koushi / Yamamoto, Akio / Yamaguchi, Masafumi et al. | 1980
- 6435
-
Removal of the high‐resistivity layer at the n on n+ liquid phase epitaxial GaAs layer‐substrate interface by controlled in situ etch‐backSeabaugh, Alan C. / Mattauch, Robert J. et al. | 1980
- 6438
-
Validity of the resistively shunted Josephson junction model for small‐area superconductor‐normal‐superconductor junctions in a magnetic fieldBarnes, S. E. et al. | 1980
- 6441
-
An improved technique for selective etching of GaAs and Ga1−xAlxAsLePore, J. J. et al. | 1980
- 6443
-
High‐performance amorphous‐silicon field‐effect transistorsMatsumura, Masakiyo / Nara, Yasuo et al. | 1980