Rapid direct writing of high‐aspect ratio trenches in silicon: Process physics (English)
- New search for: Treyz, G. V.
- New search for: Beach, R.
- New search for: Osgood, R. M.
- New search for: Treyz, G. V.
- New search for: Beach, R.
- New search for: Osgood, R. M.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
;
6
, 1
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37-44
;
1988
- Article (Journal) / Electronic Resource
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Title:Rapid direct writing of high‐aspect ratio trenches in silicon: Process physics
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Additional title:Rapid direct writing of high‐aspect ratio trenches in Si
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Contributors:
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1988-01-01
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Size:8 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 6, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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A review of excimer laser projection lithographyRothschild, M. / Ehrlich, D. J. et al. | 1988
- 18
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Local electronic structure and surface geometry of Ag on Si(111)Demuth, J. E. / Von Lenen, E. J. / Tromp, R. M. / Hamers, R. J. et al. | 1988
- 26
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Morphology of thermally etched GaAs substrate and molecular‐beam epitaxial layers grown on its substrateSaito, Junji / Nanbu, Kazuo / Kondo, Kazuo et al. | 1988
- 31
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Observation of the superstructure at the Al–GaAs(001) interface by synchrotron x‐ray diffractionMizuki, J. / Akimoto, K. / Hirosawa, I. / Hirose, K. / Mizutani, T. / Matsui, J. et al. | 1988
- 34
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X‐ray double‐crystal diffraction studies of GaInAsP/InP heterostructuresWang, X. R. / Chi, X. Y. / Zheng, H. / Miao, Z. L. / Wang, J. / Zhang, Z. S. / Jin, Y. S. et al. | 1988
- 37
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Rapid direct writing of high‐aspect ratio trenches in silicon: Process physicsTreyz, G. V. / Beach, R. / Osgood, R. M. et al. | 1988
- 45
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Thermal nitridation of silicon dioxide filmsMenéndez, I. / Fernández, M. / Sacedón, J. L. et al. | 1988
- 48
-
Photocathodic deposition of gold alloys for Ohmic contacts to III–V materialsKelly, J. J. / Rikken, J. M. G. / Jacobs, J. W. M. / Valster, A. et al. | 1988
- 53
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In situ investigation of TiN formation on top of TiSi2Willemsen, M. F. C. / Kuiper, A. E. T. / Reader, A. H. / Hokke, R. / Barbour, J. C. et al. | 1988
- 62
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Preoxidation treatments for very thin oxides grown after silicon exposure to reactive ion etching plasmaBellezza, O. / Ghezzi, P. / Gualandris, F. / Riva, C. et al. | 1988
- 66
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Plasma etching of organic materials. II. Polyimide etching and passivation downstream of an O2–CF4–Ar microwave plasmaVukanovic, V. / Takacs, G. A. / Matuszak, E. A. / Egitto, F. D. / Emmi, F. / Horwath, R. S. et al. | 1988
- 72
-
Temperature and flow effects in aluminum etching using bromine‐containing plasmasKeaton, A. Landauer / Hess, D. W. et al. | 1988
- 77
-
Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and HeSeabaugh, Alan et al. | 1988
- 82
-
Polymethacrylonitrile as a resist in x‐ray lithographySchlegel, L. / Schnabel, W. et al. | 1988
- 87
-
New portable conformable masking excimer laser lithography using water‐soluble contrast enhanced materialEndo, M. / Sasago, M / Hirai, Y. / Ogawa, K. / Ishihara, T. et al. | 1988
- 91
-
Characteristics of diazonaphthoquinone‐4‐ and ‐5‐sulfonate derivatives as sensitizers for electron‐beam positive resistsTanigaki, Katsumi et al. | 1988
- 95
-
Incorporation of rapid isothermal processor in a vacuum systemRadpour, F. / Anandakugan, S. / Chou, P. / Singh, R. et al. | 1988
- 107
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X‐ray lithographyHeuberger, A. et al. | 1988
- 122
-
Fabrication of quantum devices in metals and semiconductorsSchmid, H. / Rishton, S. A. / Kern, D. P. / Washburn, S. / Webb, R. A. / Kleinsasser, A. / Chang, T. H. P. / Fowler, A. et al. | 1988
- 127
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Fabrication of quantum wires in GaAs/AlGaAs heterolayersThoms, S. / McIntyre, I. / Beaumont, S. P. / Al‐Mudares, M. / Cheung, R. / Wilkinson, C. D. W. et al. | 1988
- 131
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Observation of Aharonov–Bohm effect in quasi‐one‐dimensional GaAs/AlGaAs ringsMankiewich, P. M. / Behringer, R. E. / Howard, R. E. / Chang, A. M. / Chang, T. Y. / Chelluri, B. / Cunningham, J. / Timp, G. et al. | 1988
- 134
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Fabrication and characterization of ultrashort gate length GaAs field‐effect transistorsTiberio, R. C. / Wolf, E. D. / Anderson, S. F. / Schaff, W. J. / Tasker, P. J. / Eastman, L. F. et al. | 1988
- 137
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Electron velocity overshoot in sub‐100‐nm channel length metal–oxide–semiconductor field‐effect transistors at 77 and 300 KShahidi, G. G. / Antoniadis, D. A. / Smith, Henry I. et al. | 1988
- 140
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Lithography for ultrashort channel silicon field effect transistor circuitsRishton, S. A. / Schmid, H. / Kern, D. P. / Luhn, H. E. / Chang, T. H. P. / Sai‐Halasz, G. A. / Wordeman, M. R. / Ganin, E. / Polcari, M. et al. | 1988
- 146
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Electron‐beam inspection technology for x‐ray masksTakeuchi, S. / Moriizumi, K. / Saitoh, K. / Yoshioka, N. / Kato, T. et al. | 1988
- 150
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Use of a pi‐phase shifting x‐ray mask to increase the intensity slope at feature edgesKu, Y.‐C. / Anderson, Erik H. / Schattenburg, Mark L. / Smith, Henry I. et al. | 1988
- 154
-
An improved boron nitride technology for synchrotron x‐ray masksLevy, R. A. / Resnick, D. J. / Frye, R. C. / Yanof, A. W. / Wells, G. M. / Cerrina, F. et al. | 1988
- 162
-
Radiation damage in boron nitride x‐ray lithography masksKing, Paul L. / Pan, Lawrence / Pianetta, Piero / Shimkunas, Alex / Mauger, Philip / Seligson, Daniel et al. | 1988
- 167
-
Reduction in x‐ray lithography shot noise exposure limit by dissolution phenomenaNeureuther, Andrew R. / Willson, C. Grant et al. | 1988
- 174
-
Reduction in x‐ray mask distortion using amorphous WNx absorber stress compensated with ion bombardmentKanayama, Toshihiko / Sugawara, Minoru / Itoh, Junji et al. | 1988
- 178
-
Progress in deep‐etch synchrotron radiation lithographyEhrfeld, W. / Bley, P. / Götz, F. / Mohr, J. / Münchmeyer, D. / Schelb, W. / Baving, H. J. / Beets, D. et al. | 1988
- 183
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Radiation stability and damage mechanisms in x‐ray membranesVladimirsky, Y. et al. | 1988
- 186
-
X‐ray lithography using broadband sourcesHollman, Richard et al. | 1988
- 191
-
Development of highly reliable synchrotron radiation lithography beamlineOkada, K. / Fujii, K. / Kawase, Y. / Nagano, M. et al. | 1988
- 195
-
Plasma focus x‐ray source for lithographyKato, Yasuo / Ochiai, Isao / Watanabe, Yoshio / Murayama, Seiichi et al. | 1988
- 199
-
Electron‐beam lithography system using a quadrupole tripletOkayama, Shigeo et al. | 1988
- 204
-
High‐precision reticle making by electron‐beam lithographyHamaguchi, Shin‐ichi / Kai, Jun‐ichi / Yasuda, Hiroshi et al. | 1988
- 209
-
The electron‐beam column for a high‐dose and high‐voltage electron‐beam exposure system EX‐7Tamamushi, S. / Wada, H. / Ogawa, Y. / Sasaki, I. / Nakasuji, M. / Kusakabe, H. / Yoshikawa, R. / Takigawa, T. et al. | 1988
- 213
-
A multiple exposure strategy for reducing butting errors in a raster‐scanned electron‐beam exposure systemDameron, David H. / Fu, Chong‐Cheng / Pease, R. F. W. et al. | 1988
- 216
-
Achromatic holographic lithography in the deep ultravioletAnderson, Erik H. / Komatsu, Kazuhiko / Smith, Henry I. et al. | 1988
- 219
-
Azide–poly(methylmethacrylate) photoresist for ultraviolet lithographyHan, C. C. / Corelli, J. C. et al. | 1988
- 224
-
Printability of defects in optical lithography: Polarity and critical location effectsMastromarco, Vincent / Neureuther, A. R. / Toh, Kenny et al. | 1988
- 230
-
Au–Zn–Si liquid‐metal ion source emitting multiple p‐ and n‐type ion species for compositional disordering of GaAs–AlGaAs multiquantum wellsArimoto, Hiroshi / Miyauchi, Eizo / Furuya, Akira / Ishida, Koji / Takamori, Takeshi / Nakashima, Hisao / Hashimoto, Hisao et al. | 1988
- 234
-
Focused‐ion‐beam milling, scanning‐electron microscopy, and focused‐droplet deposition in a single microcircuit surgery toolSudraud, P. / Ben Assayag, G. / Bon, M. et al. | 1988
- 239
-
Summary Abstract: An ion beam lithography system for nanolithography with a focused H+2 ion probeLewis, George / Mioduszewski, John / Weiner, David / Siegel, Benjamin et al. | 1988
- 241
-
Fine pattern lithography using a helium field ion sourceHoriuchi, K. / Itakura, T. / Ishikawa, H. et al. | 1988
- 245
-
Performance of a 20–200 kV focused‐ion‐beam system with a new optical design conceptAihara, R. / Sawaragi, H. / Morimoto, H. / Hosono, K. / Sasaki, Y. / Kato, T. / Hassel Shearer, M. et al. | 1988
- 249
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Pattern transfer by dry etching through stencil masksPang, S. W. / Geis, M. W. / Goodhue, W. D. / Efremow, N. N. / Ehrlich, D. J. / Goodman, R. B. / Randall, J. N. et al. | 1988
- 253
-
Characterization of ion beam etching induced defects in GaAsYuba, Yoshihiko / Ishida, Tomohiro / Gamo, Kenji / Namba, Susumu et al. | 1988
- 257
-
Magnetically enhanced reactive ion etching of silicon in bromine plasmasEl‐Masry, Ahmed M. / Fong, F‐O. / Wolfe, J. C. / Randall, John N. et al. | 1988
- 263
-
Broad ion beam modeling for extraction optics optimization and etching process simulationKorzec, D. / Schmitz, K. / Engemann, J. et al. | 1988
- 268
-
Plasma etching with a microwave cavity plasma disk sourceHopwood, J. / Dahimene, M. / Reinhard, D. K. / Asmussen, J. et al. | 1988
- 272
-
Anisotropy of low‐energy ion etching via electron cyclotron resonance plasmaTobinaga, Y. / Hayashi, N. / Araki, H. / Nakayama, S. / Kudoh, H. et al. | 1988
- 277
-
Electrical damage induced by ion beam etching of GaAsScherer, A. / Craighead, H. G. / Roukes, M. L. / Harbison, J. P. et al. | 1988
- 280
-
Effects of dry etching on the electrical properties of siliconHeddleson, J. M. / Horn, M. W. / Fonash, S. J. / Nguyen, D. C. et al. | 1988
- 284
-
Characterization of a reactive broad beam radio‐frequency ion sourceLossy, R. / Engemann, J. et al. | 1988
- 288
-
Electron energy distributions in oxygen microwave plasmasHeidenreich, J. E. / Paraszczak, J. R. / Moisan, M. / Sauve, G. et al. | 1988
- 293
-
Lift‐off metallization using poly(methyl methacrylate) exposed with a scanning tunneling microscopeMcCord, M. A. / Pease, R. F. W. et al. | 1988
- 297
-
Nanometer‐scale structure for the study of flux‐line lattice shearing in superconducting double layers of a‐Nb3Ge and NbNv. d. Drift, E. / Radelaar, S. / Pruymboom, A. / Kes, P. H. et al. | 1988
- 302
-
Microstructure fabrication and transport through quantum dotsRandall, J. N. / Reed, M. A. / Moore, T. M. / Matyi, R. J. / Lee, J. W. et al. | 1988
- 306
-
Scanning tunneling microscope liquid‐metal ion source for microfabricationBell, A. E. / Rao, K. / Swanson, L. W. et al. | 1988
- 311
-
High‐resolution Fresnel zone plates for soft x raysVladimirsky, Y. / Kern, D. / Chang, T. H. P. / Attwood, D. / Ade, H. / Kirz, J. / McNulty, I. / Rarback, H. / Shu, D. et al. | 1988
- 316
-
Microporous GaAs/GaAlAs superlatticesDeckman, H. W. / Moustakas, T. D. et al. | 1988
- 319
-
Nanolithography with an acid catalyzed resistUmbach, C. P. / Broers, A. N. / Willson, C. G. / Koch, R. / Laibowitz, R. B. et al. | 1988
- 323
-
Imaging zone plates for x‐ray microscopy fabricated by electron‐beam lithographyUnger, P. / Bögli, V. / Beneking, H. / Niemann, B. / Guttmann, P. et al. | 1988
- 328
-
Sub‐100‐nm gate length GaAs metal–semiconductor field‐effect transistors and modulation‐doped field‐effect transistors fabricated by a combination of molecular‐beam epitaxy and electron‐beam lithographyAllee, D. R. / de la Houssaye, P. R. / Schlom, D. G. / Harris, J. S. / Pease, R. F. W. et al. | 1988
- 333
-
Macromolecular self‐organized assembliesDeckman, H. W. / Dunsmuir, J. H. / Garoff, S. / McHenry, J. A. / Peiffer, D. G. et al. | 1988
- 337
-
Pattern definition and formation on curved surfacesDeininger, William D. / Garner, Charles E. et al. | 1988
- 341
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Formation of submicron silicon‐on‐insulator structures by lateral oxidation of substrate‐silicon islandsArney, Susanne C. / MacDonald, Noel C. et al. | 1988
- 346
-
A model for comparing process latitude in ultraviolet, deep‐ultraviolet, and x‐ray lithographySmith, Henry I. et al. | 1988
- 350
-
Comparison of data transfer rates of focused electron and ion beam nanometer lithographySiegel, Benjamin M. et al. | 1988
- 353
-
Dot lithography for zero‐dimensional quantum wells using focused ion beamsKubena, R. L. / Joyce, R. J. / Ward, J. W. / Garvin, H. L. / Stratton, F. P. / Brault, R. G. et al. | 1988
- 357
-
Conductive two‐layer resist system for electron‐beam lithographyTodokoro, Yoshihiro / Kajiya, Atsuhiro / Watanabe, Hisashi et al. | 1988
- 361
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Characterization of electron‐beam exposed optical resistTam, Nelson N. / Coyne, Rick D. / Neureuther, Andrew R. / Slayman, Charlie W. et al. | 1988
- 366
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A new contrast enhancement technique for electron‐beam lithographySuga, Osamu / Aoki, Emiko / Okazaki, Shinji / Murai, Fumio / Shiraishi, Hiroshi / Nonogaki, Saburo et al. | 1988
- 370
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New silicon‐containing negative resistsGranger, Diana D. / Miller, Leroy J. / Lewis, Margaret M. et al. | 1988
- 375
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Plasma polymerized styrene: A negative resistFong, F.‐O. / Kuo, Hong C. / Wolfe, J. C. / Randall, John N. et al. | 1988
- 379
-
Characterization of a high‐resolution novolak based negative electron‐beam resist with 4 μC/cm2 sensitivityLiu, Hua‐yu / deGrandpre, Mark P. / Feely, Wayne E. et al. | 1988
- 384
-
Sensitization of optical photoresists for electron‐beam exposure of submicron patternsGoncher, G. M. / Lyngdal, J. W. / Lamer, G. L. et al. | 1988
- 389
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Very large scale integrated pattern registration improvement by photoablation of resist‐covered alignment targetsPolasko, Kenneth J. / Elliott, David J. / Piwczyk, Bernhard P. et al. | 1988
- 394
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Moiré alignment technique for the mix and match lithographic systemNomura, Tsutomu / Kimura, Seiichiro / Uchida, Yoshiyuki / Hattori, Shuzo et al. | 1988
- 399
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Clearing resist from alignment mark areas using an excimer laserSeeger, D. E. / Rosenfield, M. G. et al. | 1988
- 403
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Alignment errors from resist coating topographyBobroff, Norman / Rosenbluth, Alan et al. | 1988
- 409
-
An alignment system for synchrotron radiation x‐ray lithographyItoh, Junji / Kanayama, Toshihiko / Atoda, Nobufumi / Hoh, Koichiro et al. | 1988
- 413
-
A practical interferometric technique for mask/wafer alignment during proximity printingBartelt, John L. / Olney, Ross D. et al. | 1988
- 417
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An improved magnetic‐collimating secondary electron energy filter for very large scale integrated diagnosticsRichardson, Neil / Muray, Andrew et al. | 1988
- 422
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Simple calculation formulas for field and aberrations of resistance box yokesJiang, Xinrong et al. | 1988
- 426
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Electron scattering distribution in InP at 50 kVTennant, D. M. / Doran, G. E. / Howard, R. E. / Denker, J. S. et al. | 1988
- 432
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Exact solution of the proximity effect equation by a splitting methodGerber, P. Dean et al. | 1988
- 436
-
Applying transform based proximity corrections to electron‐beam lithography with 0.2‐μm featuresHaslam, Michael E. / McDonald, John F. et al. | 1988
- 443
-
Proximity correction on the AEBLE‐150Otto, O. W. / Griffith, A. K. et al. | 1988
- 448
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GHOST proximity correction technique: Its parameters, limitations, and process latitudeKostelak, R. L. / Kung, E. H. / Thomson, M. G. R. / Vaidya, S. et al. | 1988
- 456
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Ionized cluster beam depositionKnauer, W. / Poeschel, R. L. et al. | 1988
- 461
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Summary Abstract: Photoablation of photoresist polymer thin films using synchrotron radiationMancini, Derrick C. / Taylor, James W. / Beall, Charles E. et al. | 1988
- 463
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Dopant‐induced ablation of polymers by a 308 nm excimer laserHiraoka, H. / Chuang, T. J. / Masuhara, H. et al. | 1988
- 466
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Growth mechanism of thin oxide films under low‐energy oxygen‐ion bombardmentTodorov, S. S. / Fossum, E. R. et al. | 1988
- 470
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Deposition and characterization of silicon dioxide thin films deposited by mercury‐arc‐source driven photon‐activated chemical‐vapor depositionScoles, Kevin J. / Kim, Anderson H. / Jiang, Mian‐Heng / Lee, Brian C. et al. | 1988
- 473
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SiO2 films deposited on Si by dual ion beamsMinowa, Y. / Ito, H. et al. | 1988
- 477
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High‐resolution electron‐beam induced depositionKoops, H. W. P. / Weiel, R. / Kern, D. P. / Baum, T. H. et al. | 1988
- 482
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A study of time and angle correlations in the ion emission from gallium liquid metal ion sourcesBarr, D. L. / Thomson, D. J. / Brown, W. L. et al. | 1988
- 485
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Production of focused, low‐energy, hydrogen‐ion beams using a Colutron ion sourceCain, Bruce L. / Ruzic, David N. / Bastasz, Robert et al. | 1988
- 491
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A comparison of boron emission characteristics for liquid metal ion sources of PtB, PdB, and NiBSwanson, L. W. / Bell, A. E. / Schwind, G. A. et al. | 1988
- 496
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Summary Abstract: Qualitative description of cluster and droplet emission from liquid‐metal ion sourcesBahasadri, A. / Pourrezaei, K. / Francois, M. / Nayak, D. et al. | 1988
- 498
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Characteristics of a helium field ion gunKonishi, Morikazu / Takizawa, Masaaki / Tsumori, Toshiro et al. | 1988