Thermal decomposition of very thin oxide layers on Si(111) (English)
- New search for: Kobayashi, Y.
- New search for: Sugii, K.
- New search for: Kobayashi, Y.
- New search for: Sugii, K.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
10
, 4
;
2308-2313
;
1992
- Article (Journal) / Electronic Resource
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Title:Thermal decomposition of very thin oxide layers on Si(111)
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Additional title:Thermal decomposition of very thin oxide layers on Si(111)
-
Contributors:Kobayashi, Y. ( author ) / Sugii, K. ( author )
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Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 10, 4 ; 2308-2313
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1992-07-01
-
Size:6 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 10, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 591
-
Scanning tunneling microscopy of DNA: The chemical modification of gold surfaces for immobilization of DNABottomley, L. A. / Haseltine, J. N. / Allison, D. P. / Warmack, R. J. / Thundat, T. / Sachleben, R. A. / Brown, G. M. / Woychik, R. P. / Jacobson, K. Bruce / Ferrell, T. L. et al. | 1992
- 596
-
Atomic force microscope images of collagen fibersChernoff, Ellen A. G. / Chernoff, Donald A. et al. | 1992
- 600
-
Intramolecular imaging of physisorbed molecules with the scanning tunneling microscope at liquid/graphite interfaceYeo, Y. H. / Yackoboski, K. / McGonigal, G. C. / Thomson, D. J. et al. | 1992
- 603
-
Possible many‐body effects in scanning tunneling microscopy of molecular adsorbatesMintmire, J. W. / Harrison, J. A. / Colton, R. J. / White, C. T. et al. | 1992
- 606
-
Surface structural study of poly‐hydroxy‐aniline and aniline‐(3‐aminophenyl boronic acid) copolymer filmsPorter, T. L. / Oden, P. I. / Lee, C. Y. / Caple, G. et al. | 1992
- 611
-
Sub‐centimeter micromachined electron microscopeFeinerman, A. D. / Crewe, D. A. / Perng, D. C. / Shoaf, S. E. / Crewe, A. V. et al. | 1992
- 617
-
Direct synthesis of GaAs quantum‐wire structures by molecular‐beam epitaxy on (311) surfacesNötzel, R. / Ploog, K. et al. | 1992
- 623
-
Polybutadiene emulsion particles observed by scanning tunneling microscopyMorris, William G. / White, Dwain M. / Gordon, Janet L. / Thundat, Thomas et al. | 1992
- 627
-
Polyethylene crystal lamella growth on the micaXue, Z. Q. / Liu, W. M. / Gao, H. J. / Zhu, C. / Ma, Z. / Pang, S. J. et al. | 1992
- 630
-
Atomic force microscopy of deoxyribonucleic acid strands adsorbed on mica: The effect of humidity on apparent width and image contrastThundat, T. / Warmack, R. J. / Allison, D. P. / Bottomley, L. A. / Lourenco, A. J. / Ferrell, T. L. et al. | 1992
- 636
-
Nanometer‐scale instability at sliding interfaces: Tribological considerations in scanning tunneling microscopyJones, L. A. / Thomas, D. F. et al. | 1992
- 641
-
Force microscopy utilizing tunnel junction controlKim, H. S. / Bryant, P. J. et al. | 1992
- 645
-
First‐principles calculations of electronic subband structure and elementary excitations of a quantum wireYu, R. H. et al. | 1992
- 651
-
Scanning tunneling microscopy study of supported Pt and Pd catalysts: Microstructure and morphologyYeung, King Lun / Wolf, E. E. et al. | 1992
- 657
-
Si(111)–(2√3×2√3)Sn reconstruction studied by ion scattering spectrometry and scanning tunneling microscopyWorthington, M. S. / Stevens, J. L. / Chang, C. S. / Tsong, I. S. T. et al. | 1992
- 657
-
Si(111)-(23 x 23)Sn reconstruction studied by ion scattering spectrometry and scanning tunneling microscopyWorthington, M. S. / Stevens, J. L. / Chang, C. S. / Tsong, I. S. T. et al. | 1992
- 664
-
Optical study of strained quantum well wiresTan, I‐Hsing / Yasuda, Takashi / Mirin, Richard / Lishan, David / Hu, Evelyn / Bowers, John / Merz, James / He, Ming Yuan / Evans, Anthony et al. | 1992
- 669
-
Faceting, reconstruction, and defect microstructure at ceramic surfaces revealed by atomic force microscopyAntonik, M. D. / Lad, R. J. et al. | 1992
- 674
-
Scanning probe metrologyGriffith, J. E. / Grigg, D. A. / Vasile, M. J. / Russell, P. E. / Fitzgerald, E. A. et al. | 1992
- 680
-
Tip–sample forces in scanning probe microscopy in air and vacuumGrigg, D. A. / Russell, P. E. / Griffith, J. E. et al. | 1992
- 684
-
Theory of epitaxial growth onto nonplanar substratesOzdemir, M. / Zangwill, A. et al. | 1992
- 691
-
Nonplanar step and terrace configurated surfaces as templates for crystal growth dynamics studiesColas, E. / Nihous, G. C. / Hwang, D. M. et al. | 1992
- 697
-
InGaAs quantum well wires grown on patterned GaAs substratesMirin, Richard P. / Tan, I‐Hsing / Weman, Helge / Leonard, Marilyn / Yasuda, Takashi / Bowers, John E. / Hu, Evelyn L. et al. | 1992
- 701
-
Low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy using a nitrogen free‐radical sourcePark, Robert M. et al. | 1992
- 705
-
Metal–oxide–semiconductor gate oxide reliability and the role of fluorineMa, T. P. et al. | 1992
- 713
-
Role of ion energy in ion beam oxidation of semiconductors: Experimental study and modelVancauwenberghe, O. / Herbots, N. / Hellman, O. C. et al. | 1992
- 719
-
Effects of NH3 and N2 source gases and plasma excitation frequencies on the reaction chemistry for Si3N4 thin‐film growth by remote plasma‐enhanced chemical‐vapor depositionTheil, J. A. / Hattangady, S. V. / Lucovsky, G. et al. | 1992
- 728
-
Stacked oxide as trench gate dielectricTsou, L. Y. / Kuo, D. S. / Egloff, R. H. / Mukherjee, S. et al. | 1992
- 733
-
Electrical and dielectric properties of thin film BaTiO3 capacitors deposited by radio frequency magnetron sputteringShi, Z. Q. / Jia, Q. X. / Anderson, W. A. et al. | 1992
- 737
-
Growth sequence dependence of interdiffusion at the GaAs/In0.53Ga0.47As strained‐layer heterojunctionWilliams, M. D. / Chang, T. Y. et al. | 1992
- 741
-
Homojunction band discontinuities induced by dipolar intralayers: Al–As in GeMarsi, M. / La Rosa, S. / Hwu, Y. / Margaritondo, G. et al. | 1992
- 744
-
Internally detected electron photoexcitation spectroscopy on heterostructuresColuzza, C. / Margaritondo, G. / Neglia, A. / Carluccio, R. et al. | 1992
- 749
-
Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructionsVitomirov, I. M. / Raisanen, A. D. / Finnefrock, A. C. / Viturro, R. E. / Chang, S. / Brillson, L. J. / Kirchner, P. D. / Pettit, G. D. / Woodall, J. M. et al. | 1992
- 749
-
Surface and interface states for GaAs(100) (1 x 1) and (4 x 2)-c(8 x 2) reconstructionsVitomirov, I. M. / Raisanen, A. D. / Finnefrock, A. C. / Viturro, R. E. et al. | 1992
- 754
-
Amorphous Si as an interfacial control layer for SiNx/InPKwok, R. W. M. / Lau, W. M. / Ingrey, S. / Landheer, D. et al. | 1992
- 759
-
Enhanced structural and electronic properties of strained Ge(100) films grown by molecular‐beam epitaxy with a Sb surfactant layerRioux, Dennis / Höchst, Hartmut et al. | 1992
- 765
-
Interfacial band alignments for LaF3, NdF3, and TmF3 heterojunctions on Si(111)Colbow, K. M. / Gao, Y. / Tiedje, T. / Dahn, J. R. / Reimers, J. N. / Cramm, S. et al. | 1992
- 769
-
Epitaxial relations and electrical properties of low‐temperature‐grown CaF2 on Si(111)Cho, C.‐C. / Liu, H. Y. / Gnade, B. E. / Kim, T. S. / Nishioka, Y. et al. | 1992
- 775
-
Calculations of the barrier height and charge distribution of a metal–dielectric interfaceKeller, Robert C. / Helms, C. R. et al. | 1992
- 781
-
Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substratesMa, Yi / Yasuda, T. / Habermehl, S. / Lucovsky, G. et al. | 1992
- 788
-
Stacked gates with doped μc‐Si electrodes and SiO2 dielectrics, both deposited by remote plasma‐enhanced chemical vapor depositionLee, D. R. / Ma, Y. / Yasuda, T. / Björkman, C. H. / Lucovsky, G. et al. | 1992
- 792
-
Dry surface cleaning in integrated vacuum reactive ion etching processesYapsir, Andrie S. et al. | 1992
- 795
-
Preoxidation Si cleaning and its impact on metal oxide semiconductor characteristicsKasi, S. R. / Liehr, M. et al. | 1992
- 802
-
Reactivity of a fluorine passivated silicon surfaceHaring, Ruud A. / Liehr, Michael et al. | 1992
- 806
-
Mechanisms of the HF/H2O vapor phase etching of SiO2Helms, C. R. / Deal, B. E. et al. | 1992
- 812
-
Surface electrical properties of HF‐treated Si(100)Huang, L. J. / Lau, W. M. et al. | 1992
- 817
-
Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniquesThomas, R. E. / Mantini, M. J. / Rudder, R. A. / Malta, D. P. / Hattangady, S. V. / Markunas, R. J. et al. | 1992
- 823
-
Excimer laser cleaning and processing of Si(100) substrates in ultrahigh vacuum and reactive gasesWatanabe, J. K. / Gibson, U. J. et al. | 1992
- 829
-
III–V surface processingIngrey, S. et al. | 1992
- 837
-
Surface chemistry of GaAs treated with buffered HF and NH4F solutions: Slow reactions of process residualsYota, J. / Burrows, V. A. et al. | 1992
- 843
-
Temperature optimization in an azimuthally symmetric single-water chemical vapor deposition reactor: The low pressure regimeKotecki, D. E. / Barbee, S. G. et al. | 1992
- 843
-
Temperature optimization in an azimuthally symmetric single‐wafer chemical vapor deposition reactor: The low pressure regimeKotecki, David E. / Barbee, Steven G. et al. | 1992
- 850
-
Application of computational fluid modeling to the development of semiconductor chemical vapor deposition systemsZook, M. A. / Runchal, A. K. et al. | 1992
- 856
-
Selective aluminum chemical vapor depositionTsubouchi, Kazuo / Masu, Kazuya et al. | 1992
- 863
-
Surface analysis studies of copper chemical vapor deposition from 1,5‐cyclooctadiene‐copper(I)‐hexafluoroacetylacetonateCohen, Susan L. / Liehr, Michael / Kasi, Srinandan et al. | 1992
- 869
-
Nucleation and growth of silicon on SiO2 during SiH4 low pressure chemical vapor deposition as studied by hydrogen desorption titrationLiehr, M. / Dana, S. S. / Anderle, M. et al. | 1992
- 874
-
Transmission electron microscopy and vibrational spectroscopy studies of undoped and doped Si,H and Si,C:H filmsChen, Y. L. / Wang, C. / Lucovsky, G. / Maher, D. M. / Nemanich, R. J. et al. | 1992
- 881
-
Structures of selected boranes and carboranesLee, Sunwoo / Dowben, P. A. / Wen, A. T. / Hitchcock, A. P. / Glass, John A. / Spencer, James T. et al. | 1992
- 886
-
Formation of compound semiconductors by electrochemical atomic layer epitaxySuggs, D. Wayne / Villegas, Ignacio / Gregory, Brian W. / Stickney, John L. et al. | 1992
- 892
-
Infrared spectroscopy of hydrogen‐terminated gallium arsenide (100)Gee, P. E. / Hicks, R. F. et al. | 1992
- 897
-
Low temperature, low pressure CdZnS films produced by metalorganic chemical vapor depositionSmith, Patricia B. et al. | 1992
- 903
-
Metalorganic chemical vapor deposition growth of ZnTe on GaAsTompa, G. S. / Summers, C. J. et al. | 1992
- 907
-
Dopant diffusion in silicides: Effect of diffusion pathsStanis, C. / Thomas, O. / Cotte, J. / Charai, A. / LeGoues, F. K. / d’Heurle, F. M. et al. | 1992
- 912
-
Etching of thin metal films using a ballistic modelTait, R. N. / Dew, S. K. / Smy, T. / Brett, M. J. et al. | 1992
- 916
-
Reduction in diffusion of copper in parylene by thermal pretreatmentYang, G.‐R. / Dabral, S. / Wu, X. M. / Lu, T.‐M. / McDonald, J. F. / Bakhru, H. et al. | 1992
- 920
-
Adsorption and decomposition of TMGa on GaAs(100)Stienstra, J. / Lewis, B. S. / Aarts, J. F. M. et al. | 1992
- 926
-
Adsorption kinetics of n‐alkyl thiols on gold studied by second harmonic generation and x‐ray photoelectron spectroscopyBuck, M. / Grunze, M. / Eisert, F. / Fischer, J. / Träger, F. et al. | 1992
- 930
-
Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processingLavoie, C. / Johnson, S. R. / Mackenzie, J. A. / Tiedje, T. / van Buuren, T. et al. | 1992
- 934
-
In situ real‐time ellipsometry for film thickness measurement and controlHenck, Steven A. et al. | 1992
- 939
-
In situ characterization of sputtered thin films using a normal incidence laser reflectometerBabić, Dubravko I. / Reynolds, Thomas E. / Hu, Evelyn L. / Bowers, John E. et al. | 1992
- 945
-
Monitoring of the aluminum nitride sputtering deposition by soft x‐ray emission spectroscopyLegrand, P. B. / Dauchot, J. P. / Hecq, M. et al. | 1992
- 950
-
Silicon nitride/silicon oxynitride/silicon dioxide thin film multilayer characterized by variable angle spectroscopic ellipsometryXiong, Yi‐Ming / Snyder, Paul G. / Woollam, John A. / Krosche, Eric R. et al. | 1992
- 955
-
Synthesis of boron nitride ultrathin films: The bonding and chemistry of ammonia and hydrazine on Ru(0001) and B/Ru(0001) surfacesRodriguez, José A. / Truong, Charles M. / Goodman, D. Wayne et al. | 1992
- 960
-
Electron beam patterning of epitaxial CaF2 and Ca0.5Sr0.5F2/(100)GaAsHirose, Y. / Horng, S. / Kahn, A. / Wrenn, C. / Pfeffer, R. et al. | 1992
- 965
-
Electron beam patterning of SiO2Allen, P. E. / Griffis, D. P. / Radzimski, Z. J. / Russell, P. E. et al. | 1992
- 970
-
Synthesis and characterization of SiO2 films deposited using tetraethylorthosilicate/ozone at low processing pressures (10−1 to 10−3)Stonnington, K. D. / Hsieh, K. Y. / King, L. L. H. / Bachman, K. J. / Kingon, A. I. et al. | 1992
- 974
-
Polarization of electronic charge and distortion of surface geometry by a scanning tunneling microscopy tip: Si(100)Huang, Z.‐H. / Weimer, M. / Allen, R. E. / Lim, H. et al. | 1992
- 978
-
Theoretical studies of clean and hydrogenated diamond (100) by molecular mechanicsYang, Yuemei L. / D’Evelyn, Mark P. et al. | 1992
- 985
-
Si(111)(7×7) dangling bond contribution to surface recombinationHsu, J. W. P. / Bahr, C. C. / vom Felde, A. / Downey, S. W. / Higashi, G. S. / Cardillo, M. J. et al. | 1992
- 985
-
Si(111)(7 x 7) dangling bond contribution to surface recombinationHsu, J. W. P. / Bahr, C. C. / Vom Felde, A. / Downey, S. W. et al. | 1992
- 990
-
Minority‐carrier lifetime and photon recycling in n‐GaAsAhrenkiel, R. K. / Keyes, B. M. / Lush, G. B. / Melloch, M. R. / Lundstrom, M. S. / MacMillan, H. F. et al. | 1992
- 996
-
Annealing and activation of Si implanted InPAkano, U. G. / Mitchell, I. V. / Shepherd, F. R. / Miner, C. J. et al. | 1992
- 1002
-
Amorphization of c‐Si by the sputter deposition of Au studied by x‐ray photoelectron diffractionLamontagne, B. / Sacher, E. / Wertheimer, M. R. et al. | 1992
- 1006
-
Nondestructive evaluation of silicon‐on‐insulator substrates using x‐ray double crystal topographyMa, David I / Campisi, George J. / Qadri, Syed B. / Peckerar, Martin C. et al. | 1992
- 1012
-
Characterization of the electrical bias induced strain variation in metal–oxide–semiconductor field effect transistors using x‐ray double crystal topographyMa, David I / Qadri, Syed B. / Peckerar, Martin C. / McCarthy, Daniel et al. | 1992
- 1020
-
Interfacial reactions in the Co/Si/GaAs and Si/Co/GaAs systemsHsu, C. C. / Jin, G. L. / Ho, J. / Chen, W. D. et al. | 1992
- 1029
-
Limits on the use of tunneling to describe the Pd–Ge ohmic contact to GaAsHerrera‐Gómez, A. / Meissner, P. L. / Bravman, J. C. / Spicer, W. E. et al. | 1992
- 1035
-
Influence of monoenergetic surface state occupation on Fermi level pinning of metal–GaAs interfacesDarling, Robert B. et al. | 1992
- 1041
-
Kinetics of particle formation in the sputtering and reactive ion etching of siliconYoo, W. J. / Steinbrüchel, Ch. et al. | 1992
- 1048
-
Powder dynamics in very high frequency silane plasmasDorier, J.‐L. / Hollenstein, Ch. / Howling, A. A. / Kroll, U. et al. | 1992
- 1053
-
Plasma particulate contamination control. II. Self‐cleaning tool designSelwyn, Gary S. / Patterson, Edward F. et al. | 1992
- 1060
-
Interferometric thermometry measurements of silicon wafer temperatures during plasma processingDonnelly, V. M. / Ibbotson, D. E. / Chang, C.‐P. et al. | 1992
- 1065
-
Low temperature etch chuck: Modeling and experimental results of heat transfer and wafer temperatureWright, D. R. / Hartman, D. C. / Sridharan, U. C. / Kent, M. / Jasinski, T. / Kang, S. et al. | 1992
- 1071
-
Measurements of the Cl atom concentration in radio‐frequency and microwave plasmas by two‐photon laser‐induced fluorescence: Relation to the etching of SiOno, Kouichi / Oomori, Tatsuo / Tuda, Mutumi / Namba, Keisuke et al. | 1992
- 1080
-
Frequency effects in silane plasmas for plasma enhanced chemical vapor depositionHowling, A. A. / Dorier, J.‐L. / Hollenstein, Ch. / Kroll, U. / Finger, F. et al. | 1992
- 1086
-
Theoretical and experimental study of large aperture low energy e‐beam source for semiconductor processingKovalev, A. S. / Mankelevich, Yu. A. / Muratov, E. A. / Rakhimov, A. T. / Suetin, N. V. et al. | 1992
- 1092
-
Generation of high‐density O2 supermagnetron plasma for highly uniform plasma etchingKinoshita, Haruhisa / Nomoto, Kentaro et al. | 1992
- 1096
-
Characterization of a novel microwave stripperPasierb, F. / Ghanbari, A. / Ameen, M. S. / Heinrich, R. S. et al. | 1992
- 1100
-
Aluminum–4% Cu interconnect etching in a low‐pressure magnetically enhanced reactorNarasimhan, M. / Sasserath, J. / Ghanbari, E. et al. | 1992
- 1106
-
Reactive ion etching of HgCdTe with methane and hydrogenElkind, J. L. / Orloff, Glennis J. et al. | 1992
- 1113
-
Flow and transport modeling of a low pressure plasma etching systemBradley, Stephen G. / Chen, Ching‐Hwa / Jasinski, Thomas J. et al. | 1992
- 1118
-
Atomic hydrogen interactions with disordered regions in siliconSrikanth, K. / Ashok, S. et al. | 1992
- 1124
-
Reactive ion etching of polyimidesiloxanes in fluorine‐containing dischargesJeng, S. / Kwok, H. S. / Tyrell, J. A. et al. | 1992
- 1128
-
Ballistic transport‐reaction prediction of film conformality in tetraethoxysilane O2 plasma enhanced deposition of silicon dioxideCale, T. S. / Raupp, G. B. / Gandy, T. H. et al. | 1992
- 1135
-
Diagnostics of direct‐current‐magnetron discharges by the emission‐selected computer‐tomography techniqueMiyake, S. / Shimura, N. / Makabe, T. / Itoh, A. et al. | 1992
- 1140
-
Modeling the uniformity in a magnetron etching systemParanjpe, A. P. / Moslehi, M. M. / Davis, C. J. et al. | 1992
- 1147
-
Magnetron etching of GaAs: Etch characteristics and surface characterizationMeyyappan, M. / McLane, G. F. / Cole, M. W. / Laraeu, R. / Namaroff, M. / Sasserath, J. / Sundararaman, C. S. et al. | 1992
- 1152
-
Evaluation of sol‐gel processing as a method for fabricating spherical‐shell silica aerogel inertial confinement fusion targetsJang, K. Y. / Kim, K. et al. | 1992
- 1158
-
D–T and D2 retention in plastic shellsCollins, G. W. / Sanchez, J. J. / Fearon, E. M. et al. | 1992
- 1164
-
Ion microtomography and particle‐induced x‐ray emission analysis of direct drive inertial confinement fusion targetsAntolak, A. J. / Pontau, A. E. / Morse, D. H. / Weirup, D. L. / Heikkinen, D. W. / Cholewa, M. / Bench, G. S. / Legge, G. J. F. et al. | 1992
- 1170
-
Impurity and recycling control with gettering in the Advanced Toroidal FacilitySimpkins, J. E. / Mioduszewski, P. K. / Isler, R. C. et al. | 1992
- 1174
-
Deposition of deuterium and metals on divertor tiles in the DIII–D tokamakWalsh, D. S. / Doyle, B. L. / Jackson, G. L. et al. | 1992
- 1180
-
TiN film coatings on alumina radio frequency windowsMichizono, S. / Kinbara, A. / Saito, Y. / Yamaguchi, S. / Anami, S. / Matuda, N. et al. | 1992
- 1185
-
Simple aluminum gasket for use with both stainless steel and aluminum flangesLangley, R. A. et al. | 1992
- 1188
-
Effects of surfaces on H‐atom concentration in pulsed and continuous dischargesTserepi, Angeliki D. / Dunlop, James R. / Preppernau, Bryan L. / Miller, Terry A. et al. | 1992
- 1193
-
Appearance mass spectrometry of neutral radicals in radio frequency plasmasSugai, H. / Toyoda, H. et al. | 1992
- 1201
-
Time‐resolved measurements of electron and ion concentrations in low‐frequency sulfur hexafluoride dischargesUtagikar, Ajit / Thompson, Brian E. et al. | 1992
- 1207
-
Langmuir probe measurements of the electron energy distribution function in radio‐frequency plasmasScanlan, John V. / Hopkins, Michael B. et al. | 1992
- 1212
-
Influence of polymer formation on the angular dependence of reactive ion beam etchingBarklund, A. M. / Blom, H.‐O. et al. | 1992
- 1217
-
High selectivity electron cyclotron resonance etching of submicron polysilicon gate structuresMa, Diana X. / Lin, Tsu‐An / Chen, Ching‐Hwa et al. | 1992
- 1227
-
SiO2/Si etching with CHF3 in a high‐field magnetronMcNevin, S. C. / Ciampa, N. A. / Miner, J. et al. | 1992
- 1232
-
Electron cycloton resonance etching of aluminum alloys with BCl3–Cl2–N2Marx, William F. / Ma, Diana X. / Chen, Ching‐Hwa et al. | 1992
- 1238
-
Magnetically enhanced etching of sub‐0.5 μm polysilicon gatesBui, S. / Sasserath, J. / Ghanbari, E. et al. | 1992
- 1244
-
Recycling and particle control in DIII–DJackson, G. L. et al. | 1992
- 1252
-
Initial boronization of the DIII–D tokamakPhillips, J. / Hodapp, T. / Holtrop, K. / Jackson, G. L. / Moyer, R. / Watkins, J. / Winter, J. et al. | 1992
- 1256
-
Plasma–materials interaction issues for the International Thermonuclear Experimental Reactor (ITER)Cohen, S. A. / Mattas, R. F. / Werley, K. A. et al. | 1992
- 1265
-
Ion and neutral energies in a multipolar electron cyclotron resonance plasma sourceKing, G. / Sze, F. C. / Mak, P. / Grotjohn, T. A. / Asmussen, J. et al. | 1992
- 1270
-
Plasma uniformity and power deposition in electron cyclotron resonance etch toolsStevens, J. E. / Huang, Y. C. / Jarecki, R. L. / Cecchi, J. L. et al. | 1992
- 1276
-
Characterization of a large volume electron cyclotron resonance plasma for etching and deposition of materialsGhanbari, A. / Ameen, M. S. / Heinrich, R. S. et al. | 1992
- 1281
-
Investigation of the influence of electromagnetic excitation on electron cyclotron resonance discharge propertiesMak, P. / King, G. / Grotjohn, T. A. / Asmussen, J. et al. | 1992
- 1288
-
Self‐consistent numerical model for analyzing thermal layering of liquid mixtures of hydrogen isotopes inside a spherical inertial confinement fusion targetSimpson, E. M. / Kim, K. / Bernat, T. P. et al. | 1992
- 1295
-
Poly‐Si etching using electron cyclotron resonance microwave plasma sources with multipole confinementGorbatkin, S. M. / Berry, L. A. / Swyers, John et al. | 1992
- 1303
-
Anisotropic highly selective electron cyclotron resonance plasma etching of polysiliconGadgil, P. K. / Dane, D. / Mantei, T. D. et al. | 1992
- 1307
-
Cryogenic electron cyclotron resonance plasma etchingWhang, Ki Woong / Lee, Seok Hyun / Lee, Ho Jun et al. | 1992
- 1313
-
Low temperature etching of silicon trenches with SF6 in an electron cyclotron resonance reactorWatts, A. J. / Varhue, W. J. et al. | 1992
- 1318
-
Surface damage threshold of Si and SiO2 in electron‐cyclotron‐resonance plasmasLee, Young H. et al. | 1992
- 1325
-
X‐ray diagnostics for electron cyclotron resonance processing plasmasCastagna, T. J. / Shohet, J. L. / Ashtiani, K. A. / Hershkowitz, N. et al. | 1992
- 1331
-
Electron–sheath interaction in capacitive radio‐frequency plasmasVender, D. / Boswell, R. W. et al. | 1992
- 1339
-
Two‐dimensional model of glow discharges for a cylindrical geometryHashiguchi, Seishiro et al. | 1992
- 1344
-
Modeling of magnetron etching dischargesMeyyappan, M. / Govindan, T. R. et al. | 1992
- 1349
-
Numerical model of bombarding ions energy distribution function in magnetron dischargeLukyanova, A. V. / Rakhimov, A. T. / Suetin, N. V. et al. | 1992
- 1352
-
High‐power fast‐atom beam source and its application to dry etchingShimokawa, Fusao et al. | 1992
- 1358
-
X‐ray photoelectron spectroscopic study of the interaction of low energy carbon ions with GaAs and InPMeharg, P. F. A. / Ogryzlo, E. A. / Bello, I. / Lau, W. M. et al. | 1992
- 1365
-
X‐ray photoelectron spectroscopic study of the interactions of fluorine ions with gallium arsenideWilliston, L. R. / Bello, I. / Lau, W. M. et al. | 1992
- 1371
-
Hydrogen based reactive ion etching of zinc sulfideOrloff, Glennis J. / Elkind, J. L. / Koch, David et al. | 1992
- 1389
-
Experiments on helicon plasma sourcesChen, Francis F. et al. | 1992
- 1402
-
Characterization of biased electron cyclotron resonance deposited oxidesBulat, E. S. / Ditmer, G. / Herrick, C. / Hankin, S. et al. | 1992
- 1407
-
Mass spectrometric study of tetraethoxysilane and tetraethoxysilane–oxygen plasmas in a diode type radio‐frequency reactorCharles, C. / Garcia, P. / Grolleau, B. / Turban, G. et al. | 1992
- 1414
-
Diamondlike carbon films sputter deposited with an electron cyclotron resonance reactorKidder, J. N. / Varhue, W. J. et al. | 1992
- 1423
-
Diamond deposition in a permanent magnet microwave electron cyclotron resonance dischargeMantei, T. D. / Chang, J. J. et al. | 1992
- 1426
-
Detection of reactions and changes in thin film morphology using stress measurementsGardner, Donald S. / Longworth, Hai P. / Flinn, Paul A. et al. | 1992
- 1442
-
Effects of initial growth conditions on the stress profiles of Mo sputtered onto both moving and stationary substratesBell, Brent C. / Glocker, David A. et al. | 1992
- 1446
-
Residual stress and the effect of implanted argon in films of zirconium nitride made by physical vapor depositionPerry, A. J. / Sartwell, B. D. / Valvoda, V. / Rafaja, D. / Williamson, D. L. / Nelson, A. J. et al. | 1992
- 1453
-
Vapor transport epitaxy, a novel growth technique for compound semiconductorsGurary, A. / Tompa, G. S. / Nelson, C. R. / Stall, R. A. / Liang, S. / Lu, Y. et al. | 1992
- 1458
-
Spin superlattice formation in ZnSe‐based diluted magnetic semiconductor heterostructuresJonker, B. T. / Chou, W. C. / Petrou, A. / Warnock, J. et al. | 1992
- 1462
-
Graded refractive index silicon oxynitride thin film characterized by spectroscopic ellipsometrySnyder, Paul G. / Xiong, Yi‐Ming / Woollam, John A. / Al‐Jumaily, Ghanim A. / Gagliardi, F. J. et al. | 1992
- 1467
-
Preparation, characterization, and chemical properties of ultrathin MgO films on Mo(100)Wu, Ming‐Cheng / Corneille, Jason S. / He, Jian‐Wei / Estrada, Cesar A. / Goodman, D. Wayne et al. | 1992
- 1472
-
In situ characterization of thin‐film defect generation using total internal reflection microscopyWilliams, F. L. / Petersen, G. A. / Carmiglia, C. K. / Pond, B. J. et al. | 1992
- 1479
-
Process effects on structural properties of TiO2 thin films by reactive sputteringWicaksana, Dwi / Kobayashi, Akihiko / Kinbara, Akira et al. | 1992
- 1483
-
TiOx film formation process by reactive sputteringKinbara, A. / Kusano, E. / Baba, S. et al. | 1992
- 1488
-
Effects of space charge on ion energy in ionized cluster beam film depositionUrban, Frank K. / Feng, Susan W. et al. | 1992
- 1493
-
Effect of deposition technique on the As‐deposited microstructure of copper thin filmsWalsh, L. Harper / Feilchenfeld, Natalie B. / Schwarz, J. A. et al. | 1992
- 1497
-
Study of the oxygen transport through Ag (110), Ag (poly), and Ag 2.0 ZrOutlaw, R. A. / Wu, D. / Davidson, M. R. / Hoflund, Gar B. et al. | 1992
- 1503
-
Synthesis and structural characteristics of ion‐beam sputtered multilayer Ag/Al thin filmsKim, C. / Qadri, S. B. et al. | 1992
- 1508
-
Micrometer patterning of phthalocyanine derivatives by selective chemical vapor deposition methodSekiguchi, A. / Pasztor, K. / Shimo, N. / Masuhara, H. et al. | 1992
- 1511
-
X‐ray photoelectron spectroscopy characterization of a nonsuperconducting Y–Ba–Cu–O superconductor–normal‐metal–superconductor barrier materialVasquez, R. P. / Hunt, B. D. / Foote, M. C. / Bajuk, L. J. et al. | 1992
- 1514
-
Chemical vapor depositing of metal fluoridesSarhangi, A. / Power, J. M. et al. | 1992
- 1518
-
Structural anisotropy in oblique incidence thin metal filmsTait, R. N. / Smy, T. / Brett, M. J. et al. | 1992
- 1522
-
Synthesis and structure of a superconducting Au–Nb superlatticeJankowski, A. F. et al. | 1992
- 1526
-
Manifestation of electric dipole selection rules in angle resolved photoemission spectra from zinc blende semiconductorsNiles, David W. / Höchst, Hartmut et al. | 1992
- 1531
-
Nucleation and growth of DyBa2Cu3O7−x thin films on SrTiO3 substrates studied by transmission electron microscopy and atomic force microscopyAgrawal, V. / Chandrasekhar, N. / Zhang, Y. J. / Achutharaman, V. S. / Mecartney, M. L. / Goldman, A. M. et al. | 1992
- 1537
-
Study of the surface morphology and growth mode of in situ ion‐beam sputter‐deposited YBa2Cu3O7−δ thin filmsLichtenwalner, D. J. / Auciello, O. / Woolcott, R. R. / Soble, C. N. / Adu‐Poku, R. / Chapman, R. / Rou, S. H. / Duarte, J. / Kingon, A. I. et al. | 1992
- 1544
-
Surface and interface properties of superconducting YBa2Cu3O7−x thin films on GaAs using yttrium stablized ZrO2/Si3N4 as a buffer layerJia, Q. X. / Lee, S. Y. / Shi, Z. Q. / Anderson, W. A. / Shaw, D. T. et al. | 1992
- 1547
-
Study of YBaCuO on W/Si by x‐ray photoelectron spectroscopyChopra, D. R. / Chourasia, A. R. / Chen, Li / Bensaoula, A. H. / Bensaoula, A. et al. | 1992
- 1554
-
Integration of ferroelectric thin films into nonvolatile memoriesSinharoy, S. / Buhay, H. / Lampe, D. R. / Francombe, M. H. et al. | 1992
- 1562
-
Effects of post‐deposition annealing ambient on the electrical characteristics and phase transformation kinetics of sputtered lead zirconate titanate (65/35) thin film capacitorsChikarmane, Vinay / Sudhama, Chandra / Kim, Jiyoung / Lee, Jack / Tasch, Al / Novak, Steve et al. | 1992
- 1569
-
Recent advances in physical vapor growth processes for ferroelectric thin filmsKrupanidhi, S. B. et al. | 1992
- 1578
-
Plasma‐enhanced metalorganic chemical vapor deposition of BaTiO3 filmsVan Buskirk, Peter C. / Gardiner, Robin / Kirlin, Peter S. / Krupanidhi, Salora et al. | 1992
- 1584
-
Structural and chemical composition investigation of thin lead zirconate titanate filmsHuffman, M. / Goral, J. P. / Al‐Jassim, M. M. / Echer, C. et al. | 1992
- 1592
-
Atom assisted sputtering yield amplificationBerg, S. / Barklund, A. M. / Gelin, B. / Nender, C. / Katardjiev, I. et al. | 1992
- 1597
-
Molecular‐dynamics study of film growth with energetic Ag atomsGilmore, C. M. / Sprague, J. A. et al. | 1992
- 1600
-
Effect of oxidant on resputtering of Bi from Bi–Sr–Ca–Cu–O filmsGrace, J. M. / McDonald, D. B. / Reiten, M. T. / Olson, J. / Kampwirth, R. T. / Gray, K. E. et al. | 1992
- 1604
-
Deposition and properties of polycrystalline TiN/NbN superlattice coatingsChu, X. / Wong, M. S. / Sproul, W. D. / Rohde, S. L. / Barnett, S. A. et al. | 1992
- 1610
-
Growth of epitaxial aluminum nitride and aluminum nitride/zirconium nitride superlattices on Si(111)Meng, W. J. / Heremans, J. et al. | 1992
- 1618
-
Formation of polyhedral voids at surface cusps during growth of epitaxial TiN/NbN superlattice and alloy filmsHultman, L. / Wallenberg, L. R. / Shinn, M. / Barnett, S. A. et al. | 1992
- 1625
-
Chemical and structural analyses of the titanium nitride/alpha (6H)‐silicon carbide interfaceGlass, R. C. / Spellman, L. M. / Tanaka, S. / Davis, R. F. et al. | 1992
- 1631
-
Microstructure and stoichiometry dependence of ion beam nitrides as a function of energy and temperature: A comparative study between Si and SiGeHellman, Olof C. / Herbots, Nicole / Vancauwenberghe, Olivier / Culbertson, R. J. / Croft, W. J. et al. | 1992
- 1637
-
Reactive N+2 ion bombardment of GaAs{110}: A method for GaN thin film growthDeLouise, Lisa A. et al. | 1992
- 1642
-
Deposition of indium nitride by low energy modulated indium and nitrogen ion beamsBello, I. / Lau, W. M. / Lawson, R. P. W. / Foo, K. K. et al. | 1992
- 1647
-
Thin‐film development and methods for compact disk and laser disk manufacturingSchulz, S. / Lacher, R. / Reineck, S. R. / Seiler, R. / Marcantonio, J. et al. | 1992
- 1657
-
In situ measurement of temperature uniformity of disk substrate in an in‐line sputtering systemFujita, E. / Furusawa, K. / Kataoka, H. / Tsumita, N. / Yonekawa, T. / Shige, N. et al. | 1992
- 1662
-
Surface modification of steel sheets using dry processHyodo, T. / Kagechika, H. / Kibe, H. / Yasue, Y. / Okude, N. et al. | 1992
- 1669
-
Ion plating as an industrial manufacturing methodPulker, H. K. et al. | 1992
- 1675
-
Commercial‐scale application of plasma processing for polymeric substrates: From laboratory to productionFelts, J. T. / Grubb, A. D. et al. | 1992
- 1682
-
Low resistance indium tin oxide films on large scale glass substrateOyama, T. / Hashimoto, N. / Shimizu, J. / Akao, Y. / Kojima, H. / Aikawa, K. / Suzuki, K. et al. | 1992
- 1687
-
Comparison of ion‐bombardment removal rates of sputter‐deposited niobium during deposition and after depositionMerz, M. D. / McClanahan, E. D. et al. | 1992
- 1690
-
Analysis of ion scattering by thin SiO2 layers in boron implants through SiO2 into siliconPark, Changhae / Klein, Kevin M. / Yang, Shyh‐Horng / Tasch, Al F. / Simonton, Robert B. / Lux, Gayle E. et al. | 1992
- 1696
-
Approach to estimate gettering effects in Ti–O2 reactive sputtering processKusano, E. / Baba, S. / Kinbara, A. et al. | 1992
- 1701
-
Effects of target microstructure on aluminum alloy sputtered thin film propertiesBailey, R. S. et al. | 1992
- 1706
-
Preparation of low resistivity Cu–1 at. %Cr thin films by magnetron sputteringCabral, C. / Harper, J. M. E. / Holloway, K. / Smith, D. A. / Schad, R. G. et al. | 1992
- 1713
-
Particle contamination during sputter deposition of W–Ti filmsWickersham, C. E. / Poole, J. E. / Mueller, J. J. et al. | 1992
- 1718
-
Mass spectrometric ion analysis in the sputtering of oxide targetsIshibashi, K. / Hirata, K. / Hosokawa, N. et al. | 1992
- 1723
-
Deposition and properties of diamondlike carbon films produced in microwave and radio‐frequency plasmaRaveh, A. / Klemberg‐Sapieha, J. E. / Martinu, L. / Wertheimer, M. R. et al. | 1992
- 1728
-
Hydrogenated amorphous silicon thin films deposited by triode assisted reactive sputteringSoukup, R. J. / Kantor, K. J. et al. | 1992
- 1734
-
Comparison of stress and structural composition of sputter deposited thick coatings of TiB2+Ni on polymeric compositesTaylor, K. A. / Emrick, A. J. et al. | 1992
- 1740
-
Cathodic arc evaporation in thin film technologyVyskočil, J. / Musil, J. et al. | 1992
- 1749
-
Properties of (Ti1−xAlx)N coatings for cutting tools prepared by the cathodic arc ion plating methodTanaka, Y. / Gür, T. M. / Kelly, M. / Hagstrom, S. B. / Ikeda, T. / Wakihira, K. / Satoh, H. et al. | 1992
- 1757
-
Modification of chemical properties of materials by ion beam mixing and ion beam assisted depositionWolf, G. K. et al. | 1992
- 1765
-
Enhanced sputtering of one species in the processing of multielement thin filmsHarper, J. M. E. / Berg, S. / Nender, C. / Katardjiev, I. V. / Motakef, S. et al. | 1992
- 1772
-
Reactive alternating current magnetron sputtering of dielectric layersScherer, M. / Schmitt, J. / Latz, R. / Schanz, M. et al. | 1992
- 1777
-
Growth conditions for sputter deposited niobium oxidesLee, R. C. / Aita, C. R. et al. | 1992
- 1784
-
Reactive sputtering with an unbalanced magnetronHowson, R. P. / Ja’fer, H. A. et al. | 1992
- 1791
-
High rate sputter deposition of wear resistant tantalum coatingsMatson, D. W. / Merz, M. D. / McClanahan, E. D. et al. | 1992
- 1797
-
Characterization of TiN films deposited using multicathode unbalanced magnetronsRohde, S. L. / Nelson, A. J. / Mason, A. / Sproul, W. D. et al. | 1992
- 1804
-
Diagnostics of dual source reactive magnetron sputter deposition of aluminum nitride and zirconium nitride thin filmsSell, Jeffrey A. / Meng, W. J. / Perry, Thomas A. et al. | 1992
- 1809
-
Laser ablation deposition of TiN filmsKools, J. C. S. / Nillesen, C. J. C. M / Brongersma, S. H. / van de Riet, E. / Dieleman, J. et al. | 1992
- 1815
-
Growth of ferroelectric oxide thin films by excimer laser ablationKrupanidhi, S. B. / Maffei, N. / Roy, D. / Peng, C. J. et al. | 1992
- 1821
-
High quality YBCO films grown over large areas by pulsed laser depositionGreer, J. A. et al. | 1992
- 1827
-
Excimer laser ablation of ferroelectric Pb(Zr~1Ti)O~3 thin films with low pressure direct-current glow dischargeRoy, D. / Krupanidhi, S. B. / Dougherty, J. P. et al. | 1992
- 1827
-
Excimer laser ablation of ferroelectric Pb(Zr,Ti)O3 thin films with low pressure direct‐current glow dischargeRoy, D. / Krupanidhi, S. B. / Dougherty, J. P. et al. | 1992
- 1832
-
In situ spectroscopic ellipsometry in molecular beam epitaxyMaracas, G. N. / Edwards, J. L. / Shiralagi, K. / Choi, K. Y. / Droopad, R. / Johs, B. / Woolam, J. A. et al. | 1992
- 1840
-
Closed‐loop control of growth of semiconductor materials and structures by spectroellipsometryAspnes, D. E. / Quinn, W. E. / Tamargo, M. C. / Gregory, S. / Schwarz, S. A. / Pudensi, M. A. A. / Brasil, M. J. S. P. / Nahory, R. E. et al. | 1992
- 1842
-
Study of GaAs and AlGaAs buried structures by differential photoreflectance spectroscopyBadakhshan, Ali / Sydor, M. / Mitchel, W. C. et al. | 1992
- 1846
-
Reflection high‐energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beamsMokler, S. M. / Liu, W. K. / Ohtani, N. / Joyce, B. A. et al. | 1992
- 1856
-
Optical anisotropy spectra of GaAs(001) surfacesChang, Yia‐Chung / Ren, Shang‐Fen / Aspnes, D. E. et al. | 1992
- 1863
-
Impact of vacuum equipment contamination on semiconductor yieldO’Hanlon, John F. / Parks, Harold G. et al. | 1992
- 1869
-
Contamination control in the design and manufacture of gas flow componentsSullivan, John / Schaffer, Skip / King, Steve / Manos, Dennis / Dylla, H. F. et al. | 1992
- 1875
-
Study of particle emission in vacuum from film depositsLogan, Joseph S. / McGill, James J. et al. | 1992
- 1879
-
Estimating the gas partial pressure due to diffusive outgassingSanteler, Donald J. et al. | 1992
- 1884
-
New generation solar control coated productsNikodem, Robert B. et al. | 1992
- 1892
-
Design of selective transmissive/reflective coatings for windowsKoss, V. A. / Belkind, A. / Vossen, J. L. / Wolfe, J. et al. | 1992
- 1897
-
Plasma ion‐assisted deposition: A promising technique for optical coatingsPongratz, S. / Zöller, A. et al. | 1992
- 1905
-
Ion‐assisted sputtering of tungsten oxide solar‐control filmsRubin, M. et al. | 1992
- 1908
-
Cosputtered films of mixed TiO2/SiO2Laird, R. / Belkind, A. et al. | 1992
- 1913
-
Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperaturesSedgwick, T. O. / Agnello, P. D. et al. | 1992
- 1920
-
Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor depositionQian, R. / Kinosky, D. / Hsu, T. / Irby, J. / Mahajan, A. / Thomas, S. / Anthony, B. / Banerjee, S. / Tasch, A. / Rabenberg, L. et al. | 1992
- 1927
-
Molecular‐beam epitaxy of strained silicon germanium/silicon structuresKasper, E. / Jorke, H. et al. | 1992
- 1935
-
Electronic and geometric effects in tunneling images of silicon based heteroepitaxial growthKubby, J. A. / Greene, W. J. et al. | 1992
- 1940
-
Structure, chemistry, and band bending at the epitaxial NiAl/p‐GaAs(001) interfaceChambers, S. A. / Loebs, V. A. et al. | 1992
- 1946
-
Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structuresPalmstro/m, C. J. / Cheeks, T. L. / Gilchrist, H. L. / Zhu, J. G. / Carter, C. B. / Wilkens, B. J. / Martin, R. et al. | 1992
- 1954
-
Modification of Schottky barrier heights at InP(110) interfaces using Sb interlayersYamada, Masao / Green, Albert M. / Wahi, Anita. K. / Kendelewicz, Tom / Spicer, William E. et al. | 1992
- 1959
-
Correlation of the interfacial structure and electrical properties of epitaxial silicides on SiSullivan, J. P. / Tung, R. T. / Schrey, F. / Graham, W. R. et al. | 1992
- 1965
-
Potassium adsorption on the Si(100)(2x1) surface studied by Si and K core level photoemission and photoabsorption spectroscopyMa, Y. / Rudolf, P. / Chen, C. T. / Sette, F. et al. | 1992
- 1965
-
Potassium adsorption on the Si(100)(2×1) surface studied by Si and K core level photoemission and photoabsorption spectroscopyMa, Y. / Rudolf, P. / Chen, C. T. / Sette, F. et al. | 1992
- 1970
-
Nucleation and growth of thin metal films on clean and modified metal substrates studied by scanning tunneling microscopyHwang, R. Q. / Günther, C. / Schröder, J. / Günther, S. / Kopatzki, E. / Behm, R. J. et al. | 1992
- 1981
-
Microscopic aspects of the initial growth of metastable fcc iron on Au(111)Stroscio, Joseph A. / Pierce, D. T. / Dragoset, R. A. / First, P. N. et al. | 1992
- 1986
-
Metal/metal homoepitaxy on fcc(111) and fcc(001) surfaces: Deposition and scattering from small islandsSanders, David E. / Halstead, David M. / DePristo, Andrew E. et al. | 1992
- 1993
-
Nucleation and growth of ultrathin Fe and Au films on Cu(100) studied by scanning tunneling microscopyChambliss, D. D. / Wilson, R. J. / Chiang, S. et al. | 1992
- 1999
-
Homoepitaxial growth investigated by high‐resolution He atom scattering: NaCl onto NaCl(001)Duan, J. / Bishop, G. G. / Gillman, E. S. / Chern, G. / Safron, S. A. / Skofronick, J. G. et al. | 1992
- 2006
-
I–III–VI2 compound semiconductors for solar cell applicationsBaşol, Bülent M. et al. | 1992
- 2013
-
Grid metallization and antireflection coating optimization for concentrator and one‐sun photovoltaic solar cellsGessert, T. A. / Coutts, T. J. et al. | 1992
- 2025
-
Barrier‐limited transport in μc‐Si and μc‐Si,C thin films prepared by remote plasma‐enhanced chemical‐vapor depositionLucovsky, G. / Wang, C. / Chen, Y. L. et al. | 1992
- 2032
-
Structure and bonding of tetrahedrally coordinated compound semiconductor cleavage facesDuke, C. B. et al. | 1992
- 2041
-
Extended x‐ray absorption fine structure and x‐ray standing wave study of the clean InP(110) surface relaxationWoicik, J. C. / Kendelewicz, T. / Miyano, K. E. / Cowan, P. L. / Richter, M. / Karlin, B. A. / Bouldin, C. E. / Pianetta, P. / Spicer, W. E. et al. | 1992
- 2046
-
Applications of ab initio quantum molecular dynamical relaxation: Silicon(111)‐5×5 surface reconstruction and aluminum deposited on silicon(100)Adams, Gary B. / Sankey, Otto F. et al. | 1992
- 2052
-
Energy surface and dynamics of Si(100)Gryko, Jan / Allen, Roland E. et al. | 1992