Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates (English)
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- New search for: Jiang, C. P.
- New search for: Huang, Z. M.
- New search for: Guo, S. L.
- New search for: Chu, J. H.
- New search for: Cui, L. J.
- New search for: Zeng, Y. P.
- New search for: Zhu, Z. P.
- New search for: Wang, B. Q.
- New search for: Jiang, C. P.
- New search for: Huang, Z. M.
- New search for: Guo, S. L.
- New search for: Chu, J. H.
- New search for: Cui, L. J.
- New search for: Zeng, Y. P.
- New search for: Zhu, Z. P.
- New search for: Wang, B. Q.
In:
Applied Physics Letters
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79
, 12
;
1909-1911
;
2001
- Article (Journal) / Electronic Resource
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Title:Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
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Contributors:Jiang, C. P. ( author ) / Huang, Z. M. ( author ) / Guo, S. L. ( author ) / Chu, J. H. ( author ) / Cui, L. J. ( author ) / Zeng, Y. P. ( author ) / Zhu, Z. P. ( author ) / Wang, B. Q. ( author )
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Published in:Applied Physics Letters ; 79, 12 ; 1909-1911
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Publisher:
- New search for: American Institute of Physics
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Publication date:2001-09-17
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 79, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1745
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Continuous-wave operation of a 5.2 (micro)m quantum-cascade laser up to 210 KIshaug, Brian et al. | 2001
- 1745
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Continuous-wave operation of a 5.2 μm quantum-cascade laser up to 210 KIshaug, Brian / Hwang, Wen-Yen / Um, Jae / Guo, Bujin / Lee, Hao / Lin, Chih-Hsiang et al. | 2001
- 1748
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Three-photon phenomena in the upconversion luminescence of erbium–ytterbium-codoped phosphate glassSong, Feng / Zhang, Guangyin / Shang, Meiru / Tan, Hao / Yang, Jia / Meng, Fanzhen et al. | 2001
- 1751
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Laser frequency converter for continuous-wave tunable Ti:sapphire lasers based on aperiodically poled LiNbO3:Nd3+Capmany, J. / Pereda, J. A. / Bermu´dez, V. / Callejo, D. / Die´guez, E. et al. | 2001
- 1754
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Orientation-controlled epitaxy of A2CuO3 (A: Sr,&hthinsp;Ca) films with large optical nonlinearityManako, T. / Okimoto, Y. / Izumi, M. / Shinomori, S. / Kawasaki, M. / Kishida, H. / Okamoto, H. / Fukumura, T. / Ohtani, M. / Tokura, Y. et al. | 2001
- 1757
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Formation and decay of nonbridging oxygen hole centers in SiO2 glasses induced by F2 laser irradiation: In situ observation using a pump and probe techniqueKajihara, Koichi / Skuja, Linards / Hirano, Masahiro / Hosono, Hideo et al. | 2001
- 1760
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Vertical and lateral heterogeneous integrationGeske, Jon / Okuno, Yae L. / Bowers, John E. / Jayaraman, Vijay et al. | 2001
- 1763
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Optical gain and saturation in nitride-based laser structuresVehse, M. / Michler, P. / Lange, O. / Ro¨we, M. / Gutowski, J. / Bader, S. / Lugauer, H.-J. / Bru¨derl, G. / Weimar, A. / Lell, A. et al. | 2001
- 1766
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Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasersArzberger, M. / Bo¨hm, G. / Amann, M.-C. / Abstreiter, G. et al. | 2001
- 1769
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Comparison of negative-ion and positive-ion-assisted etching of siliconKanakasabapathy, Sivananda K. / Khater, Marwan H. / Overzet, Lawrence J. et al. | 2001
- 1772
-
Variance method for the evaluation of particle size and dislocation density from x-ray Bragg peaksBorbe´ly, A. / Groma, I. et al. | 2001
- 1775
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Electronic structure of noncrystalline transition metal silicate and aluminate alloysLucovsky, G. / Rayner, G. B. / Kang, D. / Appel, G. / Johnson, R. S. / Zhang, Y. / Sayers, D. E. / Ade, H. / Whitten, J. L. et al. | 2001
- 1778
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Radial-pattern formation in the polycarbonate substratum of recordable compact disksTanimura, M. / Ishikawa, I. / Tachibana, M. / Shinozaki, K. / Kojima, K. et al. | 2001
- 1781
-
Antiphase-boundary extension in single-variant CuPt–B ordered Ga0.47In0.53As on InPAhrenkiel, S. P. / Hanna, M. C. et al. | 2001
- 1783
-
Atomic-scale surface control and second-harmonic generation in GdxY1−xCa4O(BO3)3 thin films grown by combinatorial laser molecular-beam epitaxyKim, T.-W. / Arai, N. / Koinuma, H. / Matsumoto, Y. / Yoshimura, M. / Furuya, H. / Nakao, H. / Mori, Y. / Sasaki, T. et al. | 2001
- 1786
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A-site surface termination in strontium titanate single crystalsSchrott, A. G. / Misewich, J. A. / Copel, M. / Abraham, D. W. / Zhang, Y. et al. | 2001
- 1789
-
Cathodoluminescence study of diluted magnetic semiconductor quantum well/micromagnet hybrid structuresKossut, J. / Yamakawa, I. / Nakamura, A. / Cywin´ski, G. / Fronc, K. / Czeczott, M. / Wro´bel, J. / Kyrychenko, F. / Wojtowicz, T. / Takeyama, S. et al. | 2001
- 1792
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Investigation of short-range order in nanocrystal-forming Zr60Cu20Pd10Al10 metallic glass and the mechanism of nanocrystal formationFan, Cang / Imafuku, Muneyuki / Kurokawa, Hiroshi / Inoue, Akihisa / Haas, Volker et al. | 2001
- 1795
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Structural effects of the thermal treatment on a GaInNAs/GaAs superlatticeLargeau, L. / Bondoux, C. / Patriarche, G. / Asplund, C. / Fujioka, A. / Salomonsson, F. / Hammar, M. et al. | 2001
- 1798
-
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fractionTezuka, T. / Sugiyama, N. / Takagi, S. et al. | 2001
- 1801
-
Growth front roughening of room-temperature deposited oligomer filmsTsamouras, D. / Palasantzas, G. / De Hosson, J. Th. M. et al. | 2001
- 1804
-
Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodesSuemasu, T. / Negishi, Y. / Takakura, K. / Hasegawa, F. / Chikyow, T. et al. | 2001
- 1804
-
Influence of Si growth temperature for embedding b-FeSi2 and resultant strain in b-FeSi2 on light emission from p-Si-b-FeSi2 particles-n-Si light-emitting diodesSuemasu, T. et al. | 2001
- 1807
-
Lattice constant variation and complex formation in zincblende gallium manganese arsenideSchott, G. M. / Faschinger, W. / Molenkamp, L. W. et al. | 2001
- 1810
-
Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloysLi, Q. / Xu, S. J. / Cheng, W. C. / Xie, M. H. / Tong, S. Y. / Che, C. M. / Yang, H. et al. | 2001
- 1813
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Experimental comparison between optical spectroscopy and laser-ultrasound generation in polymer-matrix compositesDubois, Marc / Lorraine, Peter W. / Filkins, Robert J. / Drake, Thomas E. et al. | 2001
- 1816
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Ohmic contact formation mechanism of Ni on n-type 4H–SiCHan, Sang Youn / Kim, Ki Hong / Kim, Jong Kyu / Jang, Ho Won / Lee, Kwang Ho / Kim, Nam-Kyun / Kim, Eun Dong / Lee, Jong-Lam et al. | 2001
- 1819
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Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon filmsvan der Wilt, Paul Ch. / van Dijk, B. D. / Bertens, G. J. / Ishihara, R. / Beenakker, C. I. M. et al. | 2001
- 1822
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Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallizationJang, Ho Won / Kim, Ki Hong / Kim, Jong Kyu / Hwang, Soon-Won / Yang, Jung Ja / Lee, Kang Jae / Son, Sung-Jin / Lee, Jong-Lam et al. | 2001
- 1825
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Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator waferYoshida, Haruhiko / Sasakura, Hiroshi / Yabuuchi, Tomoyuki / Takami, Toshinori / Uchihashi, Takayuki / Kishino, Seigo et al. | 2001
- 1828
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Single electron tunneling detected by electrostatic forceKlein, Levente J. / Williams, Clayton C. et al. | 2001
- 1831
-
Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structuresWang, Jing / Ma, Yutao / Tian, Lilin / Li, Zhijian et al. | 2001
- 1834
-
Fermi level dependence of hydrogen diffusivity in GaNPolyakov, A. Y. / Smirnov, N. B. / Pearton, S. J. / Ren, F. / Theys, B. / Jomard, F. / Teukam, Z. / Dmitriev, V. A. / Nikolaev, A. E. / Usikov, A. S. et al. | 2001
- 1837
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Direct observation of nanometer-scale Mg- and B-oxide phases at grain boundaries in MgB2Klie, R. F. / Idrobo, J. C. / Browning, N. D. / Regan, K. A. / Rogado, N. S. / Cava, R. J. et al. | 2001
- 1840
-
Superconducting properties of nanocrystalline MgB2 thin films made by an in situ annealing processZeng, X. H. / Sukiasyan, A. / Xi, X. X. / Hu, Y. F. / Wertz, E. / Li, Qi / Tian, W. / Sun, H. P. / Pan, X. Q. / Lettieri, J. et al. | 2001
- 1843
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Beneficial effect of Gd substitution on magnetic properties of magnetically anisotropic SmCo5 ribbonsZhang, Wen-yong / Shen, Bao-gen / Cheng, Zhao-hua / Li, Long / Zhou, Yu-qing / Li, Jian-qi et al. | 2001
- 1846
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Magnetic properties of the MnBi intermetallic compoundYang, J. B. / Kamaraju, K. / Yelon, W. B. / James, W. J. / Cai, Q. / Bollero, A. et al. | 2001
- 1849
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Enhanced magneto-optical Kerr effects and decreased Curie temperature in Co–Mn ferrite thin filmsZhou, Biao / Zhang, Ya-Wen / Liao, Chun-Sheng / Cheng, Fu-Xiang / Yan, Chun-Hua / Chen, Liang-Yao / Wang, Song-You et al. | 2001
- 1852
-
Thermally stable dynamic piezoelectricity in sandwich films of porous and nonporous amorphous fluoropolymerMellinger, Axel / Wegener, Michael / Wirges, Werner / Gerhard-Multhaupt, Reimund et al. | 2001
- 1855
-
Metal drift behavior in low dielectric constant organosiloxane polymerMallikarjunan, A. / Murarka, S. P. / Lu, T.-M. et al. | 2001
- 1858
-
Interface control of Bi4Ti3O12 film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layerRokuta, E. / Choi, J.-H. / Hotta, Y. / Tabata, H. / Kobayashi, H. / Kawai, T. et al. | 2001
- 1861
-
Tailoring the temperature coefficient of capacitance in ferroelectric varactorsGevorgian, S. / Petrov, P. K. / Ivanov, Z. / Wikborg, E. et al. | 2001
- 1864
-
Formation of coupled quantum dots in single-wall carbon nanotubesIshibashi, K. / Suzuki, M. / Ida, T. / Aoyagi, Y. et al. | 2001
- 1867
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Effects of O2, Ar, and H2 gases on the field-emission properties of single-walled and multiwalled carbon nanotubesWadhawan, A. / Stallcup, R. E. / Stephens, K. F. / Perez, J. M. / Akwani, I. A. et al. | 2001
- 1870
-
Enhanced luminescence from the disordered quantum-wire superlatticeSasaki, Akio / Okanishi, Ryohei / Liu, Xinquan / Wang, Xuelun / Ogura, Mutsuo et al. | 2001
- 1873
-
Evaporation of carbon nanotubes during electron field emissionDean, Kenneth A. / Burgin, Timothy P. / Chalamala, Babu R. et al. | 2001
- 1876
-
Formation of metal particle nanowires induced by ultrashort laser pulsesKaempfe, M. / Graener, H. / Kiesow, A. / Heilmann, A. et al. | 2001
- 1879
-
Straight carbon nanotube Y junctionsLi, W. Z. / Wen, J. G. / Ren, Z. F. et al. | 2001
- 1882
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Nanoscale patterning of Si(100) surfaces by scratching through the native oxide layer using atomic force microscopeSantinacci, L. / Djenizian, T. / Schmuki, P. et al. | 2001
- 1885
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Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxySun, Y. T. / Rodrı´guez Messmer, E. / Lourdudoss, S. / Ahopelto, J. / Rennon, S. / Reithmaier, J. P. / Forchel, A. et al. | 2001
- 1888
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Squeezing out hidden force information from scanning force microscopesTodd, Brian A. / Eppell, Steven J. / Zypman, Fredy R. et al. | 2001
- 1891
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Light responsive polymer field-effect transistorNarayan, K. S. / Kumar, N. et al. | 2001
- 1894
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Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gapDiMatteo, R. S. / Greiff, P. / Finberg, S. L. / Young-Waithe, K. A. / Choy, H. K. H. / Masaki, M. M. / Fonstad, C. G. et al. | 2001
- 1897
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Scanning probe electromagnetic tweezersBarbic, Mladen / Mock, Jack J. / Gray, Andrew P. / Schultz, S. et al. | 2001
- 1900
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Investigation of spurious velocity overshoot using Monte Carlo dataGrasser, T. / Kosina, H. / Selberherr, S. et al. | 2001
- 1903
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Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectorsAdivarahan, V. / Simin, G. / Tamulaitis, G. / Srinivasan, R. / Yang, J. / Khan, M. Asif / Shur, M. S. / Gaska, R. et al. | 2001
- 1906
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Dynamics of the response to microwave radiation in YBa2Cu3O7−x hot-electron bolometer mixersHarnack, Oliver / Il’in, Konstantin S. / Siegel, Michael / Karasik, Boris S. / McGrath, William R. / de Lange, Gert et al. | 2001
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Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substratesJiang, C. P. / Huang, Z. M. / Guo, S. L. / Chu, J. H. / Cui, L. J. / Zeng, Y. P. / Zhu, Z. P. / Wang, B. Q. et al. | 2001
- 1912
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Reconstructing x-ray fluorescence microtomogramsSchroer, Christian G. et al. | 2001
- 1915
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Quantitative atom-resolved force gradient imaging using noncontact atomic force microscopyOral, Ahmet / Grimble, Ralph A. / O¨zer, H. O¨zgu¨r / Hoffmann, Peter M. / Pethica, John B. et al. | 2001
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Symmetry dependence of x-ray absorption near-edge structure at the metal K edge of 3d transition metal compoundsWu, Ziyu / Xian, D. C. / Natoli, C. R. / Marcelli, A. / Paris, E. / Mottana, A. et al. | 2001
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