Erratum: ‘‘Transient cathodoluminescence of semiconductors in a scanning electron microscope’’ [J. Appl. Phys. 58, 4354 (1985)] (English)
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In:
Journal of Applied Physics
;
59
, 8
;
3002
;
1986
- Article (Journal) / Electronic Resource
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Title:Erratum: ‘‘Transient cathodoluminescence of semiconductors in a scanning electron microscope’’ [J. Appl. Phys. 58, 4354 (1985)]
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Contributors:Jakubowicz, A. ( author )
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Published in:Journal of Applied Physics ; 59, 8 ; 3002
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Publisher:
- New search for: American Institute of Physics
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Publication date:1986-04-15
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 59, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2609
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Electromagnetic scattering by periodic arrays of particlesWaterman, P. C. / Pedersen, N. E. et al. | 1986
- 2619
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Picosecond study of near‐band‐gap nonlinearities in GaInAsPIslam, M. N. / Ippen, E. P. / Burkhardt, E. G. / Bridges, T. J. et al. | 1986
- 2629
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Direct observation of structural phase changes in proton‐exchanged LiNbO3 waveguides using transmission electron microscopyLee, W. E. / Sanford, N. A. / Heuer, A. H. et al. | 1986
- 2634
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Electron orbits in combined rotating quadrupole and dipole magnetic fieldsLevush, B. / Antonsen, T. M. / Manheimer, W. M. et al. | 1986
- 2638
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Distribution of charge carriers generated in a semiconductor by a focused convergent light beamWilson, T. / McCabe, E. M. et al. | 1986
- 2643
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Structural characterization of proton exchanged LiNbO3 optical waveguidesCanali, C. / Carnera, A. / Della Mea, G. / Mazzoldi, P. / Al Shukri, S. M. / Nutt, A. C. G. / De La Rue, R. M. et al. | 1986
- 2650
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Propagation of light in an optically active electro‐optic crystal of Bi12SiO20: Measurement of the electro‐optic coefficientHenry, M. / Mallick, S. / Roue`de, D. / Celaya, L. E. / Garcia Weidner, A. et al. | 1986
- 2655
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Electronic conduction in polyethylene naphthalate at high electric fieldsKojima, Kenzo / Takai, Yoshiaki / Ieda, Masayuki et al. | 1986
- 2660
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Reflection of surface acoustic waves on anisotropic mediaSchiavone, P. / Planat, M. et al. | 1986
- 2666
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cw composite acoustic resonator and some applications in nondestructive testing of materialsIvanov, D. V. / Burov, J. I. et al. | 1986
- 2673
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Diffusive gas transport through capillaries: A solution to the intermediate case based upon the kinetic theory of gasesMoss, Arthur Z. et al. | 1986
- 2677
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Large‐scale‐length nonuniformities in gas puff implosionsHussey, T. W. / Matzen, M. K. / Roderick, N. F. et al. | 1986
- 2685
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Magnetic insulation of extraction Applied‐B ion diodesSlutz, Stephen A. / Seidel, David B. et al. | 1986
- 2689
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Dopant redistribution during titanium silicide formationAmano, Jun / Merchant, P. / Cass, T. R. / Miller, J. N. / Koch, Tim et al. | 1986
- 2694
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Characterization of shallow (Rp <20 nm) As‐ and B‐implanted and electron‐beam annealed siliconMcMillan, G. B. / Shannon, J. M. / Clegg, J. B. / Ahmed, H. et al. | 1986
- 2704
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Acoustic emissions from penny‐shaped cracks in glass. I. Radiation pattern and crack orientationKim, Kwang Yul / Sachse, Wolfgang et al. | 1986
- 2704
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Acoustic emissions from penny-shaped cracks in glass. Pt. 1. Radiation pattern and crack orientationKim, K.Y. / Sachse, W. et al. | 1986
- 2711
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Acoustic emissions from penny-shaped cracks in glass. Pt. 2. Moment tensor and source-time functionKim, K.Y. / Sachse, W. et al. | 1986
- 2711
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Acoustic emissions from penny‐shaped cracks in glass. II. Moment tensor and source‐time functionKim, Kwang Yul / Sachse, Wolfgang et al. | 1986
- 2716
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Elastic precursor decay calculationPartom, Y. et al. | 1986
- 2728
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Low‐temperature phase diagram of the Ga‐As‐Sb system and liquid‐phase‐epitaxial growth of lattice‐matched GaAsSb on (100) InAs substratesMani, H. / Joullie, A. / Karouta, F. / Schiller, C. et al. | 1986
- 2735
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Interfacial conditions for thermomechanical equilibrium in two‐phase crystalsJohnson, William C. / Alexander, J. Iwan D. et al. | 1986
- 2747
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Trapping of deuterium in krypton‐implanted nickelFrank, R. C. / McManus, S. P. / Rehn, L. E. / Baldo, P. et al. | 1986
- 2752
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Transport number measurements during plasma anodization of Si, GaAs, and ZrSi2Perrie`re, J. / Siejka, J. / Re´mili, N. / Laurent, A. / Straboni, A. / Vuillermoz, B. et al. | 1986
- 2760
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Thermal evolution of molybdenum disilicide grown on (100) silicon under ultrahigh vacuum conditionsPerio, A. / Torres, J. et al. | 1986
- 2765
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Hydrogenation during thermal nitridation of silicon dioxideKuiper, A. E. T. / Willemsen, M. F. C. / Theunissen, A. M. L. / van de Wijgert, W. M. / Habraken, F. H. P. M. / Tijhaar, R. H. G. / van der Weg, W. F. / Chen, James T. et al. | 1986
- 2773
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Cross‐sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus‐doped polycrystalline silicon gateWong, C. Y. / Lai, F. S. / McFarland, P. A. / d’Heurle, F. M. / Ting, C. Y. et al. | 1986
- 2777
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Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxyRockett, A. / Klem, J. / Barnett, S. A. / Greene, J. E. / Morkoc¸, H. et al. | 1986
- 2784
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Localized epitaxial growth of CrSi2 on siliconShiau, F. Y. / Cheng, H. C. / Chen, L. J. et al. | 1986
- 2788
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Quantifying solid–fluid interfacial phenomena in porous rocks with proton nuclear magnetic resonanceSchmidt, Ehud J. / Velasco, Katherine K. / Nur, Amos M. et al. | 1986
- 2798
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Computer simulation of high‐resolution transmission electron microscopy images of Si/SiO2 interfacesOhdomari, Iwao / Mihara, Tohru / Kai, Kazuhiko et al. | 1986
- 2803
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Model for ion‐assisted thin‐film densificationMu¨ller, Karl‐Heinz et al. | 1986
- 2808
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Interface reactions at Cu‐Hg1−xCdxTe contactsEhsani, H. / Bene´, R. W. et al. | 1986
- 2812
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Photoexcitation effects in semi‐insulating GaAs as revealed by electron paramagnetic resonanceGoltzene´, A. / Meyer, B. / Schwab, C. et al. | 1986
- 2817
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Investigation of localization in a 10‐well superlatticeLittleton, R. K. / Camley, R. E. et al. | 1986
- 2821
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Hydrogenation of shallow‐donor levels in GaAsPearton, S. J. / Dautremont‐Smith, W. C. / Chevallier, J. / Tu, C. W. / Cummings, K. D. et al. | 1986
- 2828
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Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxyZemon, S. / Norris, P. / Koteles, E. S. / Lambert, G. et al. | 1986
- 2833
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Photoluminescence killer center in AlGaAs grown by molecular‐beam epitaxyAkimoto, K. / Kamada, M. / Taira, K. / Arai, M. / Watanabe, N. et al. | 1986
- 2837
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Band structure and density of states changes in heavily doped siliconBennett, Herbert S. et al. | 1986
- 2845
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Influence of thickness on the galvanomagnetic properties of thin InSb films for highly sensitive magnetoresistance elementsIsai, Masaaki / Fukunaka, Toshiaki / Ohshita, Masahide et al. | 1986
- 2849
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Theoretical study of the photovoltaic properties of polycrystalline siliconJoshi, D. P. / Srivastava, R. S. et al. | 1986
- 2859
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Electrical behavior of extended twins present in layered GeSeAnagnostopoulos, A. N. / Kyriakos, D. S. et al. | 1986
- 2863
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Photoconductivity in doped microcrystalline Si:H,Cl filmsAugelli, Vincenzo / Ligonzo, Teresa / Murri, Roberto / Schiavulli, Luigi et al. | 1986
- 2866
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Studies on n‐CdTe/p‐CuInSe2 heterojunctionsPrasad, J. J. B. / Rao, D. Krishna / Sobhanadri, J. et al. | 1986
- 2870
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Temperature dependence of the Hall‐effect electron concentration in n‐Al0.28Ga0.72 As/GaAs heterostructuresSvensson, Stefan P. / Swanson, Alan W. et al. | 1986
- 2879
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Interpretation of capacitance versus voltage measurements in the presence of a high density of deep levelsShiau, Jeng‐Jye / Fahrenbruch, Alan L. / Bube, Richard H. et al. | 1986
- 2885
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Impact ionization across the conduction‐band‐edge discontinuity of quantum‐well heterostructuresChuang, S. L. / Hess, K. et al. | 1986
- 2895
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A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxyLee, M. / Nicholas, D. J. / Singer, K. E. / Hamilton, B. et al. | 1986
- 2901
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Effect of annealing process parameters on the properties of AuGe ohmic contacts to GaAsKulkarni, A. K. / Lukowski, J. T. et al. | 1986
- 2905
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Effects of rf bias on the superconducting and structural properties of rf magnetron sputtered NbNCarter, W. L. / Cukauskas, E. J. / Qadri, S. B. / Lewis, A. S. / Mattauch, R. J. et al. | 1986
- 2908
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Preparation of remanently ferromagnetic Gd(0001)Weller, D. / Alvarado, S. F. et al. | 1986
- 2914
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Anisotropic aggregates as the origin of magnetically induced dichroism in ferrofluidsReed, Wayne / Fendler, Janos H. et al. | 1986
- 2925
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Calculation of thickness dependence of magnetization and Curie temperature in (111)‐oriented thin Y3Fe5O12 filmsTakeuchi, Teruaki / Sugita, Yutaka et al. | 1986
- 2929
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Electrical conductivity and thermoelectric power measurements of some lithium–titanium ferritesManjula, R. / Murthy, V. R. K. / Sobhanadri, J. et al. | 1986
- 2933
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Radiation damage of germanium‐doped silica glasses: Spectral simplification by photo‐ and thermal bleaching, spectral identification and microwave saturation characteristicsChamulitrat, Walee / Kevan, Larry / Schwartz, Robert N. / Blair, G. Richard / Tangonan, Gregory L. et al. | 1986
- 2940
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Relations between isothermal and adiabatic third‐order material constants of piezoelectric and pyroelectric crystalsKittinger, Erwin / Tichy´, Jan et al. | 1986
- 2944
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Influence of gas viscosity on the photoacoustic signal in gas‐microphone cellsKorpiun, P. / Bu¨chner, B. / Tam, A. C. / Wong, Y. H. et al. | 1986
- 2950
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Optical properties of transparent and heat‐reflecting indium tin oxide films: Refinements of a model for ionized impurity scatteringHamberg, I. / Granqvist, C. G. et al. | 1986
- 2953
-
Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approachSingh, Jasprit et al. | 1986
- 2958
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A study of CClF3/H2 reactive ion etching damage and contamination effects in siliconMu, X. C. / Fonash, S. J. / Oehrlein, G. S. / Chakravarti, S. N. / Parks, C. / Keller, J. et al. | 1986
- 2968
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Free‐electron density and transit time in a finite superlatticeJogai, B. / Wang, K. L. / Brown, K. W. et al. | 1986
- 2971
-
Highly controllable pseudoline electron‐beam recrystallization of silicon on insulatorHamasaki, T. / Inoue, T. / Higashinakagawa, I. / Yoshii, T. / Tango, H. et al. | 1986
- 2977
-
Molecular reactions at plasma‐polymerized film surfacesBuss, Richard J. et al. | 1986
- 2983
-
Comment on ‘‘Phonon fluctuation model for flicker noise in elemental semiconductors’’ [J. Appl. Phys. 52, 2884 (1981)]Yevick, David / Bardyszewski, Witold / Hoenders, Bernhard et al. | 1986
- 2984
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Reply to ‘‘Comment on ‘Phonon fluctuation model for flicker noise in elemental semiconductors’ ’’ [J. Appl. Phys. 52, 2884 (1981)]Jindal, R. P. / van der Ziel, A. et al. | 1986
- 2985
-
Drift dissipative instabilities between the electron and ion cyclotron frequenciesWillett, Joseph E. / Aktas, Yildirim et al. | 1986
- 2988
-
Be/BeO/Pb tunnel junctions with ion‐beam‐sputtered beryllium base electrodesOkamoto, Minoru / Takei, Koji / Maeda, Yasushi / Igarashi, Masaru et al. | 1986
- 2991
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Mo¨ssbauer study of insoluble Fe‐Ag coevaporated thin filmKita, Eiji / Kainosho, Keiji / Tasaki, Akira / Saegusa, Norio / Takao, Masatoshi et al. | 1986
- 2993
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Guided‐wave electro‐optic modulator in Ti:LiNbO3 at λ=2.6 μmEknoyan, O. / Bulmer, C. H. / Moeller, R. P. / Burns, W. K. / Levin, K. H. et al. | 1986
- 2996
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Evidence of isovalent impurities in GaAs grown by molecular‐beam epitaxyLeroux, M. / Neu, G. / Contour, J. P. / Massies, J. / Ve`rie´, C. et al. | 1986
- 2998
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Film formation mechanisms in the plasma deposition of hydrogenated amorphous siliconTsai, C. C. / Knights, J. C. / Chang, G. / Wacker, B. et al. | 1986
- 3002
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Erratum: ‘‘Transient cathodoluminescence of semiconductors in a scanning electron microscope’’ [J. Appl. Phys. 58, 4354 (1985)]Jakubowicz, A. et al. | 1986