Determination of in‐plane residual stress states in plates using horizontally polarized shear waves (English)
National licence
- New search for: King, R. B.
- New search for: Fortunko, C. M.
- New search for: King, R. B.
- New search for: Fortunko, C. M.
In:
Journal of Applied Physics
;
54
, 6
;
3027-3035
;
1983
- Article (Journal) / Electronic Resource
-
Title:Determination of in‐plane residual stress states in plates using horizontally polarized shear waves
-
Contributors:King, R. B. ( author ) / Fortunko, C. M. ( author )
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Published in:Journal of Applied Physics ; 54, 6 ; 3027-3035
-
Publisher:
- New search for: American Institute of Physics
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Publication date:1983-06-01
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ISSN:
-
DOI:
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Type of media:Article (Journal)
-
Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 54, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2895
-
Granular effective medium approximationYonezawa, F. / Cohen, M. H. et al. | 1983
- 2900
-
Conduction mechanism and 1/f noise in ZnO varistorsKusy, A. / Kleinpenning, T. G. M. et al. | 1983
- 2907
-
Transient capacitance measurements on resistive samplesBroniatowski, A. / Blosse, A. / Srivastava, P. C. / Bourgoin, J. C. et al. | 1983
- 2911
-
Beam‐plasma discharge in a Kyoto beam‐plasma‐ion sourceIshikawa, Junzo / Takagi, Toshinori et al. | 1983
- 2923
-
Calculated Auger rates and temperature dependence of threshold for semiconductor lasers emitting at 1.3 and 1.55 μmNelson, R. J. / Dutta, N. K. et al. | 1983
- 2930
-
Simulation of rectangular arrays of large charged spheres of alternating sign by sets of point chargesZimmels, Y. et al. | 1983
- 2940
-
Inductive response of metallic spheres and spherical shellsCallarotti, R. C. / Schmidt, P. E. et al. | 1983
- 2947
-
Theoretical and experimental study of swept line electron beam annealing of semiconductorsBanerjee, S. / Streetman, B. G. et al. | 1983
- 2956
-
High‐power KrF laser transmission through optical fibers and its application to the triggering of gas switchesItoh, Yasuyuki / Kunitomo, Kouichi / Obara, Minoru / Fujioka, Tomoo et al. | 1983
- 2962
-
Analysis of multielement semiconductor lasersEbeling, K. J. / Coldren, L. A. et al. | 1983
- 2970
-
Large‐bore copper‐vapor lasers: Kinetics and scaling issuesKushner, M. J. / Warner, B. E. et al. | 1983
- 2983
-
Threshold‐temperature characteristics in (GaAl)As visible laser diodes emitting below 750 nmHayakawa, T. / Suyama, T. / Yamamoto, S. / Hayashi, H. / Yano, S. / Hijikata, T. et al. | 1983
- 2987
-
Numerical analysis of an optically pumped D2O far infrared laserOkada, T. / Behn, R. / Dupertuis, M. A. / Morgan, P. D. / Siegrist, M. R. et al. | 1983
- 2995
-
A high power D2O laser optimized for microsecond pulse durationBehn, R. / Kjelberg, I. / Morgan, P. D. / Okada, T. / Siegrist, M. R. et al. | 1983
- 3003
-
Theory of transient self‐focusing of a CO2 laser pulse in a cold dense plasmaSchmitt, A. / Ong, R. S. B. et al. | 1983
- 3012
-
Measurement of bulk photovoltaic and photorefractive characteristics of iron doped LiNbO3Grousson, R. / Henry, M. / Mallick, S. / Xu, S. L. et al. | 1983
- 3017
-
Coupling of Love waves with the bulk elastic waves in the substrateSeshadri, S. R. et al. | 1983
- 3027
-
Determination of in‐plane residual stress states in plates using horizontally polarized shear wavesKing, R. B. / Fortunko, C. M. et al. | 1983
- 3036
-
Solitons in distensible tubesThielheim, K. O. et al. | 1983
- 3043
-
Thermal‐resistive current filamentation in the cathode plasma of a pinch‐reflex diodeTripathi, V. K. / Ottinger, P. F. / Guillory, J. et al. | 1983
- 3049
-
Propagation of a large‐amplitude surface wave in a plasma column sustained by the waveMateev, E. / Zhelyazkov, I. / Atanassov, V. et al. | 1983
- 3053
-
Kinetics of formation of krypton‐halogen atom exciplexes in electron beam irradiated gasesCooper, Ronald / Denison, Lynette S. / Zeglinski, Philip / Roy, Colin R. / Gillis, Hugh et al. | 1983
- 3059
-
Effect of hydrogen impurity on the electrical characteristics of neon‐argon gas mixtures. I. Measurement of ionization coefficientsBhattacharya, A. K. et al. | 1983
- 3066
-
Effect of hydrogen impurity on the electrical characteristics of neon‐argon gas mixtures. II. Deionization processes in afterglow plasmasBhattacharya, A. K. et al. | 1983
- 3074
-
Role of photodetachment in initiation of electric discharges in SF6 and O2Van Brunt, R. J. / Misakian, M. et al. | 1983
- 3080
-
Measurement of spatially resolved gas‐phase plasma temperatures by optical emission and laser‐induced fluorescence spectroscopyDavis, Glenn P. / Gottscho, Richard A. et al. | 1983
- 3087
-
Effect of modulated high‐pressure mercury discharges on the shape of self‐reversed linesDamelincourt, J. J. / Aubes, M. / Fragnac, P. / Karabourniotis, D. et al. | 1983
- 3098
-
Isotope dependence of the breakdown strength of gasesChristophorou, L. G. / Mathis, R. A. / James, D. R. et al. | 1983
- 3101
-
Dependence of the microstructure of amorphous silicon thin films prepared by planar rf magnetron sputtering on deposition parametersDas, S. R. / Williams, D. F. / Webb, J. B. et al. | 1983
- 3106
-
Measurement of boron diffusivity in hydrogenated amorphous silicon by using nuclear reaction 10B(n,α)7LiMatsumura, H. / Sakai, K. / Maeda, M. / Furukawa, S. / Horiuchi, K. et al. | 1983
- 3111
-
Crystallization characteristics of Ni‐Zr metallic glasses from Ni20Zr80 to Ni70Zr30Altounian, Z. / Guo‐hua, Tu / Strom‐Olsen, J. O. et al. | 1983
- 3117
-
Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAsGoltzene, A. / Meyer, B. / Schwab, C. et al. | 1983
- 3121
-
Electrical properties of S implants in GaAs activated by infrared rapid thermal annealingKuzuhara, M. / Kohzu, H. / Takayama, Y. et al. | 1983
- 3125
-
Low temperature annealing of Be‐implanted GaAsKwun, Sook‐Il / Hong, Chong‐Han / Spitzer, W. G. et al. | 1983
- 3129
-
Structure of ion‐implanted and annealed Hg1−xCdxTeBahir, G. / Kalish, R. et al. | 1983
- 3141
-
The energy spectra and the quantum efficiencies of electrons emitted from the metallic elements irradiated by 60Co gamma raysNakamura, Masamoto et al. | 1983
- 3150
-
Ion‐beam‐induced conductivity in polymer filmsVenkatesan, T. / Forrest, S. R. / Kaplan, M. L. / Murray, C. A. / Schmidt, P. H. / Wilkens, B. J. et al. | 1983
- 3154
-
Electrical response of relaxing dielectrics compressed by arbitrary stress pulsesLysne, P. C. et al. | 1983
- 3160
-
Dielectric relaxation in insulators slightly damaged by stress pulsesLysne, P. C. et al. | 1983
- 3166
-
Temperature dependence of the nonlinearity constant and ultrasonic attenuation in pure silicon and germaniumRajagopalan, S. / Joharapurkar, D. N. et al. | 1983
- 3172
-
Interdiffusion in β phase Cu–Al alloysRomig, A. D. et al. | 1983
- 3172
-
Interdiffusion in beta phase Cu-Al alloysRomig, A.D.JR et al. | 1983
- 3176
-
Pulsed laser annealing of GaAs and Si: Combined reflectivity and time‐of‐flight measurementsPospieszczyk, A. / Harith, M. Abdel / Stritzker, B. et al. | 1983
- 3183
-
Theory of bulk getteringKnize, R. J. / Cecchi, J. L. et al. | 1983
- 3190
-
Reactively sputtered titanium carbide thin films: Preparation and propertiesEizenberg, M. / Murarka, S. P. et al. | 1983
- 3195
-
Interaction of reactively sputtered titanium carbide thin films with Si, SiO2Ti, TiSi2, and AlEizenberg, M. / Murarka, S. P. / Heimann, P. A. et al. | 1983
- 3200
-
Band‐gap narrowing from luminescence in p‐type SiDumke, William P. et al. | 1983
- 3203
-
Copper‐related deep level defects in III–V semiconductorsKullendorff, N. / Jansson, L. / Ledebo, L‐A˚. et al. | 1983
- 3213
-
Field drift and hydrogenation of deep level defects associated with 1‐MeV ion‐implanted oxygen in germanium diodesTavendale, A. J. / Pearton, S. J. et al. | 1983
- 3216
-
Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor–electrolyte interfacesZurawsky, W. P. / Littman, J. E. / Drickamer, H. G. et al. | 1983
- 3220
-
Carrier multiplication in semiconductors induced by the absorption of high‐intensity CO2 laser lightJames, R. B. et al. | 1983
- 3236
-
Mobility‐lifetime product and interface property in amorphous silicon solar cellsOkamoto, H. / Kida, H. / Nonomura, S. / Fukumoto, K. / Hamakawa, Y. et al. | 1983
- 3244
-
The effect of surface states and fixed charge on the field effect conductance of amorphous siliconPowell, M. J. / Pritchard, J. et al. | 1983
- 3249
-
A study of the 0.1‐eV conversion acceptor in GaAsLook, D. C. / Pomrenke, Gernot S. et al. | 1983
- 3255
-
Electrical properties of polyacetylene/polysiloxane interfaceEbisawa, F. / Kurokawa, T. / Nara, S. et al. | 1983
- 3260
-
Properties of electroless gold contacts on p‐type cadmium tellurideMusa, A. / Ponpon, J. P. / Grob, J. J. / Hage–Ali, M. / Stuck, R. / Siffert, P. et al. | 1983
- 3269
-
Interaction of hydrogenated amorphous silicon films with transparent conductive filmsKitagawa, M. / Mori, K. / Ishihara, S. / Ohno, M. / Hirao, T. / Yoshioka, Y. / Kohiki, S. et al. | 1983
- 3272
-
Damage induced in Si by ion milling or reactive ion etchingPang, S. W. / Rathman, D. D. / Silversmith, D. J. / Mountain, R. W. / DeGraff, P. D. et al. | 1983
- 3278
-
The microstructure of programmed n+pn+ polycrystalline silicon antifusesLunnon, M. E. / Greve, D. W. et al. | 1983
- 3282
-
Influence of deposition conditions on hydrogenated amorphous silicon prepared by rf planar magnetron sputteringWebb, James B. / Das, S. R. et al. | 1983
- 3286
-
Interaction between microwaves and a single vortex in a long Josephson tunnel junctionScheuermann, M. / Chen, J. T. / Chang, Jhy‐Jiun et al. | 1983
- 3291
-
Properties of Nb3Ge variable‐thickness bridgesGoto, T. / Tanihara, H. et al. | 1983
- 3295
-
Stable performance Nb variable thickness microbridge type Josephson junctions: A reproducible fabrication techniqueKodama, Jun‐ichi / Hontsu, Shigeki / Hirai, Heihachiro / Oka, Hisao / Kato, Tadao / Watakabe, Yaichiro / Kato, Taka‐aki et al. | 1983
- 3302
-
Flux‐flow type Josephson oscillator for millimeter and submillimeter wave regionNagatsuma, T. / Enpuku, K. / Irie, F. / Yoshida, K. et al. | 1983
- 3310
-
Transient flux flow voltages in type II superconductorsAnjaneyulu, Y. / Joiner, W. C. H. / Lee, Jean‐Liong / Sission, Kevin et al. | 1983
- 3310
-
Transient flux flox voltages in type II superconductorsAnjaneyulu, A. / Joiner, W.C.H. / Jean-liong Lee / Sission, K. et al. | 1983
- 3318
-
Effects of additives on the superconducting properties of powder‐metallurgically produced Cu‐Nb3Sn composite wiresWecker, J. / Bormann, R. / Freyhardt, H. C. et al. | 1983
- 3325
-
X‐ray rocking curve and ferromagnetic resonance investigations of ion‐implanted magnetic garnetSperiosu, V. S. / Wilts, C. H. et al. | 1983
- 3344
-
Magnetic properties of iron oxide photolytically produced from Fe(CO)5 impregnated porous glassBorelli, N. F. / Morse, D. L. / Schreurs, J. W. H. et al. | 1983
- 3351
-
Mo¨ssbauer effect and magnetism of single domain Fe3O4 particles in ferrofluidsTari, A. / Popplewell, J. / Charles, S. W. / Bunbury, D. St. P. / Alves, K. M. B. et al. | 1983
- 3359
-
Corner clusters in thin soft magnetic layers. I. Space‐charge‐density and field singularitiesvan den Berg, H. A. M. et al. | 1983
- 3359
-
Corner clusters in thin soft magnetic layers. IVan Den Berg, H.A.M. et al. | 1983
- 3370
-
Wall oscillations of domain lattices in underdamped garnet filmsArgyle, B. E. / Jantz, W. / Slonczewski, J. C. et al. | 1983
- 3387
-
Investigation of the velocity of energy circulation of magnetostatic modes in ferritesFishman, D. A. / Morgenthaler, F. R. et al. | 1983
- 3394
-
Investigation of the complex permittivity of n‐type silicon at millimeter wavelengthsKinasewitz, Robert T. / Senitzky, B. et al. | 1983
- 3399
-
Polarization and depolarization behavior of hot pressed lead lanthanum zirconate titanate ceramicsXi, Yao / Zhili, Chen / Cross, L. E. et al. | 1983
- 3404
-
Absolute optical absorption coefficient measurements using transverse photothermal deflection spectroscopyMandelis, Andreas et al. | 1983
- 3410
-
Theoretical aspects of photoacoustic spectroscopy with light scattering samplesHelander, Per et al. | 1983
- 3415
-
Induced emission cross section of Nd:Y3Al5O12 grown by floating zone methodSekita, Masami / Kimura, Shigeyuki et al. | 1983
- 3422
-
Photoluminescence and doping in liquid phase epitaxial GaAs1−xSbxCastan˜o, J. L. / Piqueras, J. et al. | 1983
- 3427
-
New photoluminescence lines in GaAs layers grown by metalorganic vapor phase epitaxyRoth, A. P. / Goodchild, R. G. / Charbonneau, S. / Williams, D. F. et al. | 1983
- 3431
-
Optical absorption and thermoluminescence in LiF TLD‐100Caldas, Linda V. E. / Mayhugh, Michael R. / Stoebe, Thomas G. et al. | 1983
- 3438
-
Evidence for plasma jet formation in long‐pulse laser irradiation of thin planar Al targetsAnthes, J. P. / Matzen, M. K. et al. | 1983
- 3443
-
Behavior of positive ions ejected from laser‐irradiated CdSNamiki, A. / Watabe, K. / Fukano, H. / Nishigaki, S. / Noda, T. et al. | 1983
- 3448
-
Band‐to‐band Auger recombination in silicon based on a tunneling technique. I. TheoryKrieger, G. / Swanson, R. M. et al. | 1983
- 3456
-
Band‐to‐band Auger recombination in silicon based on a tunneling technique. II. ExperimentKrieger, G. / Swanson, R. M. et al. | 1983
- 3464
-
Far‐infrared photothermal ionization spectroscopy of semiconductors in the presence of intrinsic lightvan de Steeg, M. J. H. / Jongbloets, H. W. H. M. / Gerritsen, J. W. / Wyder, P. et al. | 1983
- 3475
-
Rod‐like defects in oxygen‐rich Czochralski grown siliconYamamoto, N. / Petroff, P. M. / Patel, J. R. et al. | 1983
- 3479
-
Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interfaceSadana, D. K. / Washburn, J. / Magee, C. W. et al. | 1983
- 3485
-
Impurity segregation during explosive crystallization of amorphous siliconBensahel, D. / Auvert, G. / Perio, A. / Pfister, J. C. / Izrael, A. / Henoc, P. et al. | 1983
- 3489
-
Step coverage simulation and measurement in a de planar magnetron sputtering systemBlech, I.A. / Vander Plas, H.A. et al. | 1983
- 3489
-
Step coverage simulation and measurement in a dc planar magnetron sputtering systemBlech, I. A. / Vander Plas, H. A. et al. | 1983
- 3497
-
Properties of tin doped indium oxide thin films prepared by magnetron sputteringRay, Swati / Banerjee, Ratnabali / Basu, N. / Batabyal, A. K. / Barua, A. K. et al. | 1983
- 3502
-
Kinetics of anisothermal phase transformationsMarkworth, Alan J. / Glasser, M. Lawrence et al. | 1983
- 3509
-
Spatial frequency analysis and matched filtering in electromagnetic nondestructive evaluationAuld, B. A. / Riaziat, M. et al. | 1983
- 3518
-
Time‐dependent etching of GaAs and InP with CCl4 or HCl plasmas: Electrode material and oxidant addition effectsSmolinsky, Gerald / Gottscho, Richard A. / Abys, Susan M. et al. | 1983
- 3524
-
Gaseous ion reactions in SiF4 and SiF4–D2 mixturesSenzer, S. N. / Lampe, F. W. et al. | 1983
- 3528
-
Transmit versus receive gains for microwave dish antennasRichter, John L. et al. | 1983
- 3534
-
Theoretical aspects of ionic loss in transmission lines magnetically insulated against electron lossSwegle, John et al. | 1983
- 3544
-
Use of a superconductive magnetic gradiometer near magnetic objectsPodney, Walter / Sager, Ronald et al. | 1983
- 3554
-
Transmission electron microscopy of GaAs permeable base transistor structures grown by vapor phase epitaxyVojak, B. A. / Salerno, J. P. / Flanders, D. C. / Alley, G. D. / Bozler, C. O. / Nichols, K. B. / McClelland, R. W. / Economou, N. P. / Lincoln, G. A. / Murphy, R. A. et al. | 1983
- 3561
-
Incorporation of carbon dioxide laser‐grown oxide layers into conventional metal‐oxide‐silicon devicesBoyd, Ian W. et al. | 1983
- 3566
-
Effect of oxidizing and reducing atmospheres at elevated temperatures on the electrical properties of zinc oxide varistorsSonder, E. / Austin, M. M. / Kinser, D. L. et al. | 1983
- 3573
-
Proximity effect correction for electron beam lithography by equalization of background doseOwen, Geraint / Rissman, Paul et al. | 1983
- 3582
-
Cuprous oxide–indium–tin oxide thin film photovoltaic cellsFujinaka, Masaharu / Berezin, Alexander A. et al. | 1983
- 3589
-
Effects of detector coil size and configuration on measurements of the magnetoencephalogramCuffin, B. Neil / Cohen, David et al. | 1983
- 3595
-
Density and temperature variations in pulsed discharge lasersMilonni, P. W. et al. | 1983
- 3598
-
1.3‐μm InGaAsP continuous‐wave lasers vapor grown on (311) and (511) InP substratesOlsen, G. H. / Zamerowski, T. J. / DiGiuseppe, N. J. et al. | 1983
- 3600
-
GaAs/(GaAl)As deep Zn‐diffused channeled‐substrate laserChoi, H. K. / Wang, Shyh et al. | 1983
- 3603
-
Application of energy balance to compute plasma pinch ratiosLee, S. et al. | 1983
- 3606
-
Laser‐enhanced nucleation of oxidation‐induced stacking faults in siliconHayafuji, Y. / Ogawa, J. / Aoki, Y. / Shibata, A. / Usui, S. et al. | 1983
- 3609
-
High pressure studies of Ge using synchrotron radiationQadri, S. B. / Skelton, E. F. / Webb, A. W. et al. | 1983
- 3612
-
Temperature dependent density of states effective mass in nonparabolic p‐type siliconLang, Joseph E. / Madarasz, Frank L. / Hemenger, Patrick M. et al. | 1983
- 3613
-
Palladium‐ and platinum‐related levels in silicon: Effect of a hydrogen plasmaPearton, S. J. / Haller, E. E. et al. | 1983
- 3616
-
On the calculation of differential mobilityPrice, Peter J. et al. | 1983
- 3618
-
Importance of emitter recombinations in interpretation of reverse recovery experiments at high injectionsJain, S. C. / Agarwal, S. K. / Harsh et al. | 1983
- 3620
-
Ferrite resonance conesBellan, P. M. et al. | 1983
- 3623
-
Refractive index of quaternary In1−xGaxAsyP1−y lattice matched to InPJensen, B. / Torabi, A. et al. | 1983
- 3626
-
CO2 laser‐induced melting of siliconHasselbeck, M. / Kwok, H. S. et al. | 1983
- 3629
-
Laser induced copper platingAl‐Sufi, A. K. / Eichler, H. J. / Salk, J. / Riedel, H. J. et al. | 1983
- 3632
-
Calculation of temperature profiles in radiantly heated and cooled silicon wafersAaron, D. B. / Thomas, R. E. / Wiley, J. D. et al. | 1983
- 3636
-
Polypyrrole‐semiconductor Schottky barriersIngana¨s, Olle / Skotheim, Terje / Lundstro¨m, Ingemar et al. | 1983
- 3640
-
Selective surfaces of anodic copper oxide for solar collectorsMilgram, Alvin A. et al. | 1983
- 3643
-
Erratum: Determination of effective surface recombination velocity and minority carrier lifetime in high efficiency Si solar cells [J. Appl. Phys. 54, 238 (1983)]Rose, B. H. / Weaver, H. T. et al. | 1983