Semiconducting CdF2 : Mn—A new material for efficient blue‐green electroluminescence (English)
National licence
- New search for: Langer, T.
- New search for: Krukowska‐Fulde, B.
- New search for: Langer, J. M.
- New search for: Langer, T.
- New search for: Krukowska‐Fulde, B.
- New search for: Langer, J. M.
In:
Applied Physics Letters
;
34
, 3
;
216-218
;
1979
- Article (Journal) / Electronic Resource
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Title:Semiconducting CdF2 : Mn—A new material for efficient blue‐green electroluminescence
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Contributors:
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Published in:Applied Physics Letters ; 34, 3 ; 216-218
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Publisher:
- New search for: American Institute of Physics
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Publication date:1979-02-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 34, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 179
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A model for predicting acoustic material signaturesWeglein, R. D. et al. | 1979
- 182
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The acoustic measurement of stress intensity factorsResch, M. T. / Khuri‐Yakub, B. T. / Kino, G. S. / Shyne, J. C. et al. | 1979
- 184
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Smooth multilayer films suitable for x‐ray mirrorsHaelbich, Rolf‐Peter / Segmu¨ller, Armin / Spiller, Eberhard et al. | 1979
- 187
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Electron‐attachment rate constant for Cl2 at room temperature and 250 °CRokni, M. / Jacob, J. H. / Mangano, J. A. et al. | 1979
- 190
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Experimental results on the multiphoton ionization of molecular nitrogenBaravian, G. / Godart, J. / Sultan, G. et al. | 1979
- 192
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Triode plasma etchingMinkiewicz, V. J. / Chapman, B. N. et al. | 1979
- 194
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Chemical effect in (LVV) Auger spectra of third‐period elements (Al, Si, P, and S) dissolved in copperHiraki, A. / Kim, S. / Kammura, W. / Iwami, M. et al. | 1979
- 196
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Laser‐damage‐resistant transparent conductive indium tin oxide coatingsPawlewicz, W. T. / Mann, I. B. / Lowdermilk, W. H. / Milam, D. et al. | 1979
- 198
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Angle‐of‐incidence effects in electron‐beam‐deposited SnO2/Si solar cellsFeng, Tom / Ghosh, Amal K. / Fishman, Charles et al. | 1979
- 200
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Optical damage thresholds of thin‐film and in‐diffused waveguidesNormandin, R. / So, V. C. Y. / Teh, G. A. / Stegeman, G. I. et al. | 1979
- 203
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Temperature dependence of recombination rate constants for KrF*+R+R→RKrF*+R (R=Ar,Kr)Shui, Ven H. et al. | 1979
- 205
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Raman scattering from anodic oxide‐GaAs interfacesSchwartz, G. P. / Schwartz, B. / DiStefano, D. / Gualtieri, G. J. / Griffiths, J. E. et al. | 1979
- 208
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Improvement in XeF laser efficiency at elevated temperaturesHsia, J. C. / Mangano, J. A. / Jacob, J. H. / Rokni, M. et al. | 1979
- 211
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Pulsed transverse electrodeless discharge excitation of a CO2 laserChristensen, C. P. et al. | 1979
- 213
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Ultra‐high‐gain laser‐produced plasma laser in xenon using periodic pumpingSilfvast, W. T. / Szeto, L. H. / Wood II, O. R. et al. | 1979
- 216
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Semiconducting CdF2 : Mn—A new material for efficient blue‐green electroluminescenceLanger, T. / Krukowska‐Fulde, B. / Langer, J. M. et al. | 1979
- 218
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A modulated submillimeter‐laser polarimeter for the measurement of the Faraday rotation by a plasmaMa, C. H. / Hutchinson, D. P. / Vander Sluis, K. L. et al. | 1979
- 221
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Laser annealing for solid‐phase thin‐film reactionsLiau, Z. L. / Tsaur, B. Y. / Mayer, J. W. et al. | 1979
- 224
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Long‐range enhancement of boron diffusivity induced by a high‐surface‐concentration phosphorus diffusionLecrosnier, D. / Gauneau, M. / Paugam, J. / Pelous, G. / Richou, F. et al. | 1979
- 226
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Deep exponential distribution of traps in naphthaleneCampos, M. / Giacometti, J. A. / Silver, M. et al. | 1979
- 229
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p‐n junction diodes in InP and In1−xGaxAsyP1−y fabricated by beryllium‐ion implantationArmiento, C. A. / Donnelly, J. P. / Groves, S. H. et al. | 1979
- 232
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RED display structures having dynamic hysteresis characteristicsVan Uitert, L. G. / Camlibel, I. / DeLaRue, R. M. / Kyle, T. R. / Pawelek, R. / Singh, S. / Stocker, H. J. / Zydzik, G. J. et al. | 1979
- 234
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Electronic density of states in discharge‐produced amorphous siliconHirose, M. / Suzuki, T. / Do¨hler, G. H. et al. | 1979
- 237
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Application of selective chemical reaction concept for controlling the properties of oxides on GaAsChang, R. P. H. / Coleman, J. J. / Polak, A. J. / Feldman, L. C. / Chang, C. C. et al. | 1979
- 239
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Direct observation of two‐dimensional lattice mismatch parallel to the interfacial boundary between the LPE Ga0.65Al0.35As layer and the GaAs substrateChang, Shih‐Lin et al. | 1979
- 241
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Mechanical properties of in situ multifilamentary Nb3Sn superconducting wiresFoner, S. / Roberge, R. / McNiff, E. J. / Schwartz, B. B. / Fihey, J. L. et al. | 1979