Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of Ge (English)
National licence
- New search for: Marshall, E. D.
- New search for: Zhang, B.
- New search for: Wang, L. C.
- New search for: Jiao, P. F.
- New search for: Chen, W. X.
- New search for: Sawada, T.
- New search for: Lau, S. S.
- New search for: Kavanagh, K. L.
- New search for: Kuech, T. F.
- New search for: Marshall, E. D.
- New search for: Zhang, B.
- New search for: Wang, L. C.
- New search for: Jiao, P. F.
- New search for: Chen, W. X.
- New search for: Sawada, T.
- New search for: Lau, S. S.
- New search for: Kavanagh, K. L.
- New search for: Kuech, T. F.
In:
Journal of Applied Physics
;
62
, 3
;
942-947
;
1987
- Article (Journal) / Electronic Resource
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Title:Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of Ge
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Contributors:Marshall, E. D. ( author ) / Zhang, B. ( author ) / Wang, L. C. ( author ) / Jiao, P. F. ( author ) / Chen, W. X. ( author ) / Sawada, T. ( author ) / Lau, S. S. ( author ) / Kavanagh, K. L. ( author ) / Kuech, T. F. ( author )
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Published in:Journal of Applied Physics ; 62, 3 ; 942-947
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Publisher:
- New search for: American Institute of Physics
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Publication date:1987-08-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 62, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 745
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Operation of a 120‐MW ion beam source using an Applied‐Bθ ion diodeLockner, T. R. / Poukey, J. W. / Stygar, W. / Humphries, S. / Kraybill, D. M. et al. | 1987
- 754
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Phototriggering of a 1‐J excimer laser using either UV or x raysLacour, B. / Vannier, C. et al. | 1987
- 759
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Control of ion‐exchanged waveguide profiles with Ag thin‐film sourcesTervonen, A. / Honkanen, S. / Leppihalme, M. et al. | 1987
- 764
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Characteristics of molecular‐beam epitaxially grown pair‐groove‐substrate GaAs/AlGaAs multiquantum‐well lasersYuasa, Tonao / Mannoh, Masaya / Yamada, Tomoyuki / Naritsuka, Shigeya / Shinozaki, Keisuke / Ishii, Makoto et al. | 1987
- 771
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Conduction of heat from a planar wall with uniform surface temperature to a monodispersed suspension of spheresChang, Eric Y. / Acrivos, Andreas et al. | 1987
- 777
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Sheath thickness and potential profiles of ion‐matrix sheaths for cylindrical and spherical electrodesConrad, J. R. et al. | 1987
- 780
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Influence of highly charged impurities on ion temperatures measured with active‐beam plasma diagnosticsDonne´, A. J. H. / de Heer, F. J. et al. | 1987
- 787
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Discharge properties of formed‐ferrite plasma sourcesKashiwabara, S. / Watanabe, K. / Fujimoto, R. et al. | 1987
- 792
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Atomic chlorine concentration measurements in a plasma etching reactor. I. A comparison of infrared absorption and optical emission actinometryRichards, Albert D. / Thompson, Brian E. / Allen, Kenneth D. / Sawin, Herbert H. et al. | 1987
- 799
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Atomic chlorine concentration measurements in a plasma etching reactor. II. A simple predictive modelRichards, Albert D. / Sawin, Herbert H. et al. | 1987
- 808
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An IR, optical, and electron‐spin‐resonance study of as‐deposited and annealed a‐Ge1−xCx| 1987
- 813
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Determination of ion implantation damage profiles in III‐V compounds by means of an electrochemical capacitance‐voltage techniqueTell, B. / Brown‐Goebeler, K. F. et al. | 1987
- 819
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High‐temperature heat contents, thermal diffusivities, densities, and thermal conductivities of n‐type SiGe(GaP), p‐type SiGe(GaP), and p‐type SiGe alloysAmano, T. / Beaudry, B. J. / Gschneidner, K. A. / Hartman, R. / Vining, C. B. / Alexander, C. A. et al. | 1987
- 824
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Gold diffusion in InPParguel, V. / Favennec, P. N. / Gauneau, M. / Rihet, Y. / Chaplain, R. / L’Haridon, H. / Vaudry, C. et al. | 1987
- 828
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Behavior of SiNx films as masks for Zn diffusionZou, W. X. / Vawter, G. A. / Merz, J. L. / Coldren, L. A. et al. | 1987
- 832
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An electron‐spin resonance study of the structure of plasma‐deposited silicon‐oxynitride filmsDenisse, C. M. M. / Janssen, J. F. M. / Habraken, F. H. P. M. / Van der Weg, W. F. / Schuivens, E. G. P. et al. | 1987
- 837
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Low‐temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodesIshihara, Shin‐ichiro / Kitagawa, Masatoshi / Hirao, Takashi et al. | 1987
- 841
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Formation of large metal clusters by surface nucleationKnauer, W. et al. | 1987
- 852
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Nonlinear theory of power dissipation due to the motion of heavy interstitials in a fluctuating inhomogeneous field with a strong bias: Special reference to the Snoek–Ko¨ster relaxationOg˘urtani, Tarik O¨. / Seeger, Alfred K. et al. | 1987
- 862
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Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor depositionPearton, S. J. / Vernon, S. M. / Abernathy, C. R. / Short, K. T. / Caruso, R. / Stavola, M. / Gibson, J. M. / Haven, V. E. / White, A. E. / Jacobson, D. C. et al. | 1987
- 868
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Generation and annealing of defects in silicon dioxideReisman, A. / Williams, C. K. / Maldonado, J. R. et al. | 1987
- 875
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Growth and characterization of lattice‐matched CaxSr1−xF2 on GaAs(100)Sinharoy, S. / McMullin, P. G. / Greggi, J. / Lin, Y. F. et al. | 1987
- 879
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Localized epitaxial growth of TaSi2 on (111) and (001)Si by rapid thermal annealingWu, I. C. / Chu, J. J. / Chen, L. J. et al. | 1987
- 885
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Growth of ZnSe on Ge(100) substrates by molecular‐beam epitaxyYamaguchi, Eiji / Takayasu, Ichiro / Minato, Tetsuo / Kawashima, Mitsuo et al. | 1987
- 890
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Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2Badoz, P. A. / Rosencher, E. / Torres, J. / Fishman, G. et al. | 1987
- 896
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Temperature dependence of the dynamic response of the photorefractive signal in Bi12SiO20Arizmendi, Luis / Powell, Richard C. et al. | 1987
- 900
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Optimization of the energy resolution of deep level transient spectroscopyNolte, D. D. / Haller, E. E. et al. | 1987
- 907
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Study of anomalous photovoltaic effect in vacuum‐deposited wedge‐shaped CdTe filmsSharma, Suresh K. / Srivastava, Ram S. et al. | 1987
- 912
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Degradation of tin‐doped indium‐oxide film in hydrogen and argon plasmaBanerjee, Ratnabali / Ray, Swati / Basu, N. / Batabyal, A. K. / Barua, A. K. et al. | 1987
- 917
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Nontrap capacitance dispersion in Se‐Schottky diodesChampness, C. H. et al. | 1987
- 922
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On the gate capacitance in n‐channel inversion layers on ternary semiconductors under magnetic quantizationGhatak, K. P. / Mondal, M. et al. | 1987
- 925
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Hole trapping in SiO2 films annealed in low‐pressure oxygen atmosphereHofmann, K. / Young, D. R. / Rubloff, G. W. et al. | 1987
- 931
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Electron trapping during high‐field tunneling injection in metal‐oxide‐silicon capacitors: The effect of gate‐induced strainHook, Terence B. / Ma, T.‐P. et al. | 1987
- 939
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Thermally stimulated persistent conductivity in n‐AlGaAs/GaAs heterostructuresLeybovich, I. S. / Rode, D. L. / Davis, G. A. et al. | 1987
- 942
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Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of GeMarshall, E. D. / Zhang, B. / Wang, L. C. / Jiao, P. F. / Chen, W. X. / Sawada, T. / Lau, S. S. / Kavanagh, K. L. / Kuech, T. F. et al. | 1987
- 948
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An analytical study of the p/n junction space‐charge region under high forward voltagePark, Jong‐Sik / Lindholm, Fred A. / Neugroschel, Arnost et al. | 1987
- 954
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Effects of substrate misorientation and background impurities on electron transport in molecular‐beam‐epitaxial‐grown GaAs/AlGaAs modulation‐doped quantum‐well structuresRadulescu, D. C. / Wicks, G. W. / Schaff, W. J. / Calawa, A. R. / Eastman, L. F. et al. | 1987
- 961
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Epitaxial growth of NbN on an ultrathin MgO/semiconductor systemTonouchi, Masayoshi / Sakaguchi, Yoshiyuki / Kobayashi, Takeshi et al. | 1987
- 967
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Microstructure of hot‐pressed and die‐upset NdFeB magnetsMishra, Raja K. et al. | 1987
- 972
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Optical probing of magnetostatic forward volume waves in thin film yttrium‐iron‐garnetVlannes, Nickolas P. et al. | 1987
- 990
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Coercivity after heat treatment of overquenched and optimally quenched Nd‐Fe‐BWecker, J. / Schultz, L. et al. | 1987
- 994
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Effects of electron irradiation and annealing on ferroelectric vinylidene fluoride‐trifluoroethylene copolymersDaudin, B. / Dubus, M. / Legrand, J. F. et al. | 1987
- 998
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Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet dopingKaliski, R. W. / Nam, D. W. / Deppe, D. G. / Holonyak, N. / Hsieh, K. C. / Burnham, R. D. et al. | 1987
- 1006
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Theoretical approach to the optimal preheating temperature for cw CO2 laser annealing of semiconductorsLiu, Youfan / Wang, Enge et al. | 1987
- 1010
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Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitationUchiki, Hisao / Kobayashi, Takayoshi / Sakaki, Hiroyuki et al. | 1987
- 1017
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A new system for vacuum deposition of refractory materials using an atmospheric‐pressure inductively coupled plasmaMerkle, B. D. / Kniseley, R. N. / Schmidt, F. A. et al. | 1987
- 1022
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A study of initial transient phenomena in the chemical vapor deposition process using silane plasmaNakayama, Yoshikazu / Ohtsuchi, Tetsuro / Kawamura, Takao et al. | 1987
- 1029
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Oxidation resistance of Pb‐Te‐Se optical recording filmTerao, Motoyasu / Horigome, Shinkichi / Shigematsu, Kazuo / Miyauchi, Yasushi / Nakazawa, Masatoshi et al. | 1987
- 1035
-
Titanium‐oxide films made by rf diode sputtering from a compound targetYang, Ming M. et al. | 1987
- 1042
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The kinetics and mechanism of oxide layer formation from porous silicon formed on p‐Si substratesYon, J. J. / Barla, K. / Herino, R. / Bomchil, G. et al. | 1987
- 1049
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Catalyzed gaseous etching of siliconSelamoglu, Nur / Mucha, John A. / Flamm, Daniel L. / Ibbotson, Dale E. et al. | 1987
- 1054
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The first stages of oxidation of a‐Si studied with Auger electron spectroscopyVidal, R. / Koropecki, R. / Arce, R. / Ferro´n, J. et al. | 1987
- 1059
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Analysis of barrier transmission in resonant tunneling diodesAraki, Kinichiro et al. | 1987
- 1070
-
Photolytic decomposition of gold metallopolymer thin films by UV laser direct writingHoulding, V. H. / Clements, N. S. / Beeson, K. W. et al. | 1987
- 1074
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Thin‐film palladium and silver alloys and layers for metal‐insulator‐semiconductor sensorsHughes, R. C. / Schubert, W. K. / Zipperian, T. E. / Rodriguez, J. L. / Plut, T. A. et al. | 1987
- 1084
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Ultrahigh vacuum studies of Pd metal‐insulator‐semiconductor diode H2 sensorsRye, R. R. / Ricco, A. J. et al. | 1987
- 1093
-
Intrusions in the active layer of channeled‐substrate‐planar laser diodesSlavin, S. E. / Hawrylo, F. Z. / Hughes, J. J. et al. | 1987
- 1097
-
Effects of dislocations on threshold voltage of GaAs field‐effect transistorsSuchet, P. / Duseaux, M. / Maluenda, J. / Martin, G. M. et al. | 1987
- 1102
-
New rapid thermal annealing for GaAs digital integrated circuitsTamura, Akiyoshi / Uenoyama, Takeshi / Nishii, Katsunori / Inoue, Kaoru / Onuma, Takeshi et al. | 1987
- 1108
-
Amplification of bipolar current flow by charge induced from an insulated gate electrodeXu, J. / Shur, M. / Hack, M. et al. | 1987
- 1112
-
Raman scattering studies of metalorganic chemical vapor deposition grown GaAs/AlAs superlatticesHark, S. K. / Weinstein, B. A. / Burnham, R. D. et al. | 1987
- 1115
-
Frequencies of the energy‐trapping modes of the thickness‐shear and thickness‐twist vibrations in unelectroded circular, AT‐cut quartz platesSlavov, S. / Ouroushev, D. et al. | 1987
- 1117
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Investigations of dynamical changes in metal/silicon and ion‐implanted silicon thin films by cross‐sectional transmission electron microscopy with intermittent annealings in N2 ambientLu, S. W. / Nieh, C. W. / Chen, L. J. et al. | 1987
- 1120
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Shear strength of shock‐loaded alumina as determined with longitudinal and transverse manganin gaugesRosenberg, Z. / Yaziv, D. / Yeshurun, Y. / Bless, S. J. et al. | 1987
- 1123
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Thermal expansion and flow model for pit formation in laser marking of polymeric film optical disksWissbrun, Kurt F. et al. | 1987
- 1124
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X‐ray diffraction analysis of buffer layer effects on lattice distortions of strained layer superlatticesKamigaki, K. / Sakashita, H. / Kato, H. / Nakayama, M. / Sano, N. / Terauchi, H. et al. | 1987
- 1127
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Properties of zinc phosphide (Zn3P2) thin films prepared by hot‐wall technique under high Sb vapor pressureFuke, Shunro / Imai, Tetsuji / Okuyama, Shinobu / Kuwahara, Kazuhiro et al. | 1987
- 1129
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Neutron transmutation doping of high‐purity InPLee, B. / Pan, N. / Stillman, G. E. / Hess, K. L. et al. | 1987
- 1132
-
Field emission effect on the rise time of small spark‐gap switches for N2 lasersIshikawa, Kazuhito / Muto, Shinzo / Matsuzawa, Hidenori / Suganomata, Shinji et al. | 1987
- 1134
-
Plane crystalline films of stearic acid and ω‐heptadecenoic acid as electron‐beam resistTawata, Masahiro / Morita, Shinzo / Hattori, Shuzo et al. | 1987