Enhancement of the 77 K irreversibility field and critical current density of (Bi,Pb)2Sr2Ca2Cu3Ox tapes by manipulation of the final cooling rate (English)
National licence
- New search for: Parrell, J. A.
- New search for: Larbalestier, D. C.
- New search for: Riley, G. N.
- New search for: Li, Q.
- New search for: Parrella, R. D.
- New search for: Teplitsky, M.
- New search for: Parrell, J. A.
- New search for: Larbalestier, D. C.
- New search for: Riley, G. N.
- New search for: Li, Q.
- New search for: Parrella, R. D.
- New search for: Teplitsky, M.
In:
Applied Physics Letters
;
69
, 19
;
2915-2917
;
1996
- Article (Journal) / Electronic Resource
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Title:Enhancement of the 77 K irreversibility field and critical current density of (Bi,Pb)2Sr2Ca2Cu3Ox tapes by manipulation of the final cooling rate
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Contributors:Parrell, J. A. ( author ) / Larbalestier, D. C. ( author ) / Riley, G. N. ( author ) / Li, Q. ( author ) / Parrella, R. D. ( author ) / Teplitsky, M. ( author )
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Published in:Applied Physics Letters ; 69, 19 ; 2915-2917
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Publisher:
- New search for: American Institute of Physics
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Publication date:1996-11-04
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 69, Issue 19
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2795
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Metal‐grating‐outcoupled, surface‐emitting distributed‐feedback diode lasersKasraian, Masoud / Botez, Dan et al. | 1996
- 2798
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Si/SiO2 resonant cavity photodetectorDiaz, D. C. / Schow, C. L. / Qi, Jieming / Campbell, J. C. / Bean, J. C. / Peticolas, L. J. et al. | 1996
- 2801
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The origin of blue and ultraviolet emission from porous GaPMeijerink, A. / Bol, A. A. / Kelly, J. J. et al. | 1996
- 2804
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Broad wavelength tunability of grating‐coupled external cavity midinfrared semiconductor lasersLe, H. Q. / Turner, G. W. / Ochoa, J. R. / Manfra, M. J. / Cook, C. C. / Zhang, Y.‐H. et al. | 1996
- 2807
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A gratingless wavelength stabilized semiconductor laserPezeshki, Bardia / Agahi, Farid / Kash, Jeffrey A. et al. | 1996
- 2810
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Long wavelength infrared (lambda approximately equal to 11 m) quantum cascade lasersSirtori, C. / Faist, J. / Capasso, F. / Sivco, D. L. / Hutchinson, A. L. / Cho, A. Y. et al. | 1996
- 2810
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Long wavelength infrared (lSirtori, C. et al. | 1996
- 2810
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Long wavelength infrared (λ&bartil;11 μm) quantum cascade lasersSirtori, C. / Faist, J. / Capasso, F. / Sivco, D. L. / Hutchinson, A. L. / Cho, A. Y. et al. | 1996
- 2813
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Second‐order nonlinearity of nonpoled polymeric thin films doped with pyrylium salts with blue window characteristicsNakayama, Hideki / Matsushima, Ryoka / Okamoto, Naomichi / Mizuno, Atsushi / Sugihara, Okihiro / Egami, Chikara et al. | 1996
- 2816
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Lateral self‐limitation in the laser‐induced oxidation of ultrathin metal filmsGorbunov, A. A. / Eichler, H. / Pompe, W. / Huey, B. et al. | 1996
- 2819
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Diffusion and aggregation of size‐selected silver clusters on a graphite surfaceGoldby, I. M. / Kuipers, L. / von Issendorff, B. / Palmer, R. E. et al. | 1996
- 2819
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Diffusion and aggregation of size-elected silver clusters on a graphite surfaceGoldby, I.M. et al. | 1996
- 2822
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Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopySpringholz, G. / Ueta, A. Y. / Frank, N. / Bauer, G. et al. | 1996
- 2825
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Growth and field emission properties of multiply twinned diamond films with quintuplet wedgesWang, W. N. / Fox, N. A. / Davis, T. J. / Richardson, D. / Lynch, G. M. / Steeds, J. W. / Lee, J. S. et al. | 1996
- 2828
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Irradiation‐induced improvement of crystalline quality of epitaxially grown Ag thin films on Si substratesTakahiro, K. / Nagata, S. / Yamaguchi, S. et al. | 1996
- 2831
-
Tapping mode atomic force microscopy using electrostatic force modulationHong, J. W. / Khim, Z. G. / Hou, A. S. / Park, Sang‐il et al. | 1996
- 2834
-
Frequency shifts of cantilevers vibrating in various mediaWeigert, Stefan / Dreier, Markus / Hegner, Martin et al. | 1996
- 2837
-
Time‐resolved photoluminescence studies of InGaN epilayersSmith, M. / Chen, G. D. / Lin, J. Y. / Jiang, H. X. / Asif Khan, M. / Chen, Q. et al. | 1996
- 2840
-
Atomic configurations of group V acceptors in ZnSe, ZnTe, and CdTeOstheimer, V. / Jost, A. / Filz, T. / Lauer, St. / Wolf, H. / Wichert, Th. et al. | 1996
- 2843
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Influence of strain conditions on exciton dynamics and on thermal stability of photoluminescence of ZnCdSe/ZnSe quantum wellsGodlewski, M. / Bergman, J. P. / Monemar, B. / Kurtz, E. / Hommel, D. et al. | 1996
- 2846
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Fabrication of GaAs and InAs wires in nanochannel glassBerry, A. D. / Tonucci, R. J. / Fatemi, M. et al. | 1996
- 2849
-
Dislocations and related traps in p‐InGaAs/GaAs lattice‐mismatched heterostructuresDu, A. Y. / Li, M. F. / Chong, T. C. / Teo, K. L. / Lau, W. S. / Zhang, Z. et al. | 1996
- 2852
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Effects of vacuum annealing on the optical properties of porous siliconBalagurov, L. A. / Yarkin, D. G. / Petrova, E. A. / Orlov, A. F. / Karyagin, S. N. et al. | 1996
- 2855
-
Photoluminescence of copper‐doped porous siliconHuang, Y. M. et al. | 1996
- 2858
-
Effective generation‐recombination parameters in high‐energy proton irradiated silicon diodesSimoen, E. / Vanhellemont, J. / Claeys, C. et al. | 1996
- 2861
-
Group velocities in coplanar strip transmission lines on Si and Si/SiO2/Si substrates measured using differential electro‐optic samplingChen, Erli / Chou, Stephen Y. et al. | 1996
- 2864
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Sequential lateral solidification of thin silicon films on SiO2Sposili, Robert S. / Im, James S. et al. | 1996
- 2867
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Effect of sulfur doping on optical anisotropy of CdSiAs2Osinsky, Andrei / Chernyak, Leonid / Temkin, Henryk / Wen, Yuan‐Chung / Parkinson, Bruce A. et al. | 1996
- 2870
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Phase transformations during microcutting tests on siliconTanikella, B. V. / Somasekhar, A. H. / Sowers, A. T. / Nemanich, R. J. / Scattergood, R. O. et al. | 1996
- 2873
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Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructuresAboelfotoh, M. O. / Kern, R. S. / Tanaka, S. / Davis, R. F. / Harris, C. I. et al. | 1996
- 2876
-
HgCdTe and CdTe(113)B growth on Si(112)5(degree) off by molecular beam epitaxyKawano, M. et al. | 1996
- 2876
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HgCdTe and CdTe(1¯ 1¯ 3¯)B growth on Si(112)5° off by molecular beam epitaxyKawano, M. / Ajisawa, A. / Oda, N. / Nagashima, M. / Wada, H. et al. | 1996
- 2879
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Surface lifetimes of Ga and growth behavior on GaN (0001) surfaces during molecular beam epitaxyGuha, S. / Bojarczuk, N. A. / Kisker, D. W. et al. | 1996
- 2882
-
Double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodesWierer, J. J. / Maranowski, S. A. / Holonyak, N. / Evans, P. W. / Chen, E. I. et al. | 1996
- 2885
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Tunneling current noise in thin gate oxidesAlers, G. B. / Krisch, K. S. / Monroe, D. / Weir, B. E. / Chang, A. M. et al. | 1996
- 2888
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Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se)2Herberholz, R. / Walter, T. / Mu¨ller, C. / Friedlmeier, T. / Schock, H. W. / Saad, M. / Lux‐Steiner, M. Ch. / Alberts, V. et al. | 1996
- 2891
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The origin of room temperature luminescence in Si–Ge quantum wells: The case for an interface localization modelTurton, R. J. / Jaros, M. et al. | 1996
- 2894
-
Failure phenomena and mechanisms of polymeric light‐emitting diodes: Indium–tin–oxide damageChao, Ching‐Ian / Chuang, Kuen‐Ru / Chen, Show‐An et al. | 1996
- 2897
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Magnetoresistance size effects in a three‐dimensional lattice of InSb quantum dotsRomanov, S. G. / Fokin, A. V. / Maude, D. K. / Portal, J. C. et al. | 1996
- 2900
-
Visible photoluminescence from pressure annealed intrinsic Czochralski‐grown siliconKarwasz, G. P. / Misiuk, A. / Ceschini, M. / Pavesi, L. et al. | 1996
- 2903
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Application of liftoff low‐temperature‐grown GaAs on transparent substrates for THz signal generationHeiliger, H.‐M. / Vossebu¨rger, M. / Roskos, H. G. / Kurz, H. / Hey, R. / Ploog, K. et al. | 1996
- 2906
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Stress reduction and interface quality of buried Sb δ doping layers on Si(001)Falta, J. / Bahr, D. / Hille, A. / Materlik, G. / Kammler, M. / Horn‐von Hoegen, M. et al. | 1996
- 2906
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Stress reduction and interface quality of buried Sb d doping layers on Si(001)Falta, J. et al. | 1996
- 2909
-
Growth of YBa2Cu3O7−δ–Ag thin films (Tc(0)=89 K) by pulsed laser ablation on polycrystalline Ba2LaNbO6: A new perovskite ceramic substrateKurian, J. / Varma, H. K. / Koshy, J. / Pai, S. P. / Pinto, R. et al. | 1996
- 2909
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Growth of YBa2Cu3O7 - d Ag thin films (Tc(o))Kurian, J. et al. | 1996
- 2912
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Properties of DX center in Te-doped In1 - xGaxAs y)P1 - y-GaAs0.61P0.39Jeon, Byung-Deuk et al. | 1996
- 2912
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Properties of DX center in Te‐doped In1−xG axAsyP1−y/GaAs0.61 P/d0.39Jeon, Byung‐Deuk / Kwon, Ho Ki / Choe, Byung‐Doo et al. | 1996
- 2915
-
Enhancement of the 77 K irreversibility field and critical current density of (Bi,Pb)2Sr2Ca2Cu3Ox tapes by manipulation of the final cooling rateParrell, J. A. / Larbalestier, D. C. / Riley, G. N. / Li, Q. / Parrella, R. D. / Teplitsky, M. et al. | 1996
- 2918
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Ramp-type YBa2Cu3O7 - d Josephson junctions with high characteristic voltage, fabricated by a new, completely in situ, growth techniqueStrikovskiy, M.D. et al. | 1996
- 2918
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Ramp‐type YBa2Cu3O7−δ Josephson junctions with high characteristic voltage, fabricated by a new, completely in situ, growth techniqueStrikovskiy, M. D. / Engelhardt, A. et al. | 1996
- 2921
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Fundamental operation of single‐flux‐quantum circuits using coplanar‐type high‐Tc SQUIDsFuke, Hiroyuki / Saitoh, Kazuo / Utagawa, Tadashi / Enomoto, Youichi et al. | 1996
- 2924
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Chemical inhomogeneity and reactions of BiSrCaCuO surfaces detected by synchrotron imaging spectromicroscopyHwu, Y. / Cheng, N.‐F. / Lee, S.‐D. / Tung, C.‐Y. / Alme´ras, P. / Berger, H. et al. | 1996
- 2927
-
A domain size effect in the magnetic hysteresis of NiZn‐ferritesvan der Zaag, P. J. / van der Valk, P. J. / Rekveldt, M. Th. et al. | 1996
- 2930
-
A microelectromechanical‐based magnetostrictive magnetometerOsiander, R. / Ecelberger, S. A. / Givens, R. B. / Wickenden, D. K. / Murphy, J. C. / Kistenmacher, T. J. et al. | 1996
- 2932
-
Electrical measurements of iodine doped amorphous diamondlike films grown on silicon substrateAllon‐Alaluf, M. / Croitoru, N. et al. | 1996
- 2935
-
Nonlinear space‐charge waves in a relativistic electron beam drifting along a Kerr‐like mediumUeda, T. / Shiozawa, T. et al. | 1996
- 2938
-
Comment on "Amorphous films formed b solid-state reaction in an immiscible Y-Mo system and their structural relaxation" [Appl. Phys. Lett. 68, 3096 (1996)]Clemens, B. M. / Hufnagel, T. C. et al. | 1996
- 2938
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Comment on ‘‘Amorphous films formed by solid‐state reaction in an immiscible Y–Mo system and their structural relaxation’’ [Appl. Phys. Lett. 68, 3096 (1996)]Clemens, B. M. / Hufnagel, T. C. et al. | 1996
- 2940
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CUMULATIVE AUTHOR INDEX| 1996