Free molecular transport and deposition in cylindrical features (English)
- New search for: Cale, T. S.
- New search for: Raupp, G. B.
- New search for: Cale, T. S.
- New search for: Raupp, G. B.
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
;
8
, 4
;
649-655
;
1990
- Article (Journal) / Electronic Resource
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Title:Free molecular transport and deposition in cylindrical features
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Additional title:Free molecular transport and deposition in cylindrical features
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Contributors:Cale, T. S. ( author ) / Raupp, G. B. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1990-07-01
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 8, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 0
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17th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, 31 Jan.-2 Feb. 1990, Clearwater Beach, FL, USA| 1990
- 581
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Effects on sidewall profile of Si etched in BCl3/Cl2 chemistryMaa, Jer‐shen / Gossenberger, Herman / Hammer, Larry et al. | 1990
- 581
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Effects on sidewall profile of Si etched in BCl3/Cl3 chemistryMaa, J. / Gossenberger, H. / Hammer, L. et al. | 1990
- 586
-
Development of a chlorofluorocarbon/oxygen reactive ion etching chemistry for fine‐line tungsten patterningDaubenspeck, T. H. / Sukanek, P. C. et al. | 1990
- 596
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Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance dischargesConstantine, C. / Johnson, D. / Pearton, S. J. / Chakrabarti, U. K. / Emerson, A. B. / Hobson, W. S. / Kinsella, A. P. et al. | 1990
- 607
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Reactive ion etching of GaAs, AlGaAs, and GaSb in Cl2 and SiCl4Pearton, S. J. / Chakrabarti, U. K. / Hobson, W. S. / Kinsella, A. P. et al. | 1990
- 618
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Thermal stability of ohmic contacts to n‐GaAs formed by scanned electron beam processingPrasad, K. / Faraone, L. / Nassibian, A. G. et al. | 1990
- 625
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Formation of quantum wires and quantum dots on InSb utilizing the Schottky effectSikorski, Ch. et al. | 1990
- 630
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Rapid electron beam annealing of tantalum films on siliconMahmood, F. / Cheema, O. S. / Williams, D. A. / McMahon, R. A. / Ahmed, H. / Suleman, M. et al. | 1990
- 635
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Repair of transparent defects on photomasks by laser‐induced metal deposition from an aqueous solutionJacobs, Jan W. M. / Nillesen, Chris J. C. M. et al. | 1990
- 643
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A review of simplified photolithographic techniques for image transfer in planarized very large scale integrated circuits technologyFrieser, R. G. / Ashburn, S. P. / Tranjan, F. M. / DuBois, T. D. / Bobbio, S. M. et al. | 1990
- 649
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Free molecular transport and deposition in cylindrical featuresCale, T. S. / Raupp, G. B. et al. | 1990
- 656
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In situ removal of native oxide from silicon wafersSherman, Arthur et al. | 1990
- 658
-
Erratum: Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content [J. Vac. Sci. Technol. B 7, 2030 (1989)]Maile, B. E. / Forchel, A. / Germann, R. / Grützmacher, D. / Meier, H. P. / Reithmaier, J.‐P. et al. | 1990
- 669
-
Empirical interatomic potentials for compound semiconductors: Application to superlattice stabilityKhor, K. E. / Ito, Tomonori / Das Sarma, S. et al. | 1990
- 674
-
The growth of bismuth and antimony overlayers on InP(110)Stephens, C. / Zahn, D. R. T. / Fives, K. / Cimino, R. / Braun, W. / McGovern, I. T. et al. | 1990
- 680
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Thermal stability and Schottky barrier of Sb overlayers on GaAs(110) and InP(110)Esser, N. / Reckzügel, M. / Srama, R. / Resch, U. / Zahn, D. R. T. / Richter, W. / Stephens, C. / Hünermann, M. et al. | 1990
- 686
-
Synchrotron radiation assisted metalorganic layer epitaxyHöchst, Hartmut / Engelhardt, Mike A. et al. | 1990
- 692
-
Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high‐energy electron diffractionHata, M. / Isu, T. / Watanabe, A. / Katayama, Y. et al. | 1990
- 697
-
In situ low‐energy ion scattering analysis of InP surface during molecular‐beam epitaxyKubo, Minoru / Narusawa, Tadashi et al. | 1990
- 701
-
Effect of GaAs surface reconstruction on interface state density of epitaxial ZnSe/epitaxial GaAs heterostructuresQiu, J. / Qian, Q.‐D. / Kobayashi, M. / Gunshor, R. L. / Menke, D. R. / Li, D. / Otsuka, N. et al. | 1990
- 705
-
Photoemission study of the novel Sn/GaAs(110) interface structuresTang, Ming / Joyce, J. J. / Meng, Y. / Anderson, J. / Lapeyre, G. J. et al. | 1990
- 710
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InAs/Ga1−xInxSb strained‐layer superlattices grown by molecular‐beam epitaxyChow, D. H. / Miles, R. H. / Söderström, J. R. / McGill, T. C. et al. | 1990
- 715
-
Electronic and geometric structure of clean InP(001) and of the CaF2/InP(001) interfaceWeiss, W. / Hornstein, R. / Schmeisser, D. / Göpel, W. et al. | 1990
- 724
-
Structure, chemistry, and Fermi‐level movement at interfaces of epitaxial NiAl and GaAs(001)Chambers, S. A. / Loebs, V. A. et al. | 1990
- 730
-
Homogeneous nucleation of dislocations in In0.4Ga0.6As/GaAs near critical thicknessBreen, K. R. / Uppal, P. N. / Ahearn, J. S. et al. | 1990
- 736
-
Relative core level deformation potentials in strained layer heterojunctionsGrant, R. W. / Waldrop, J. R. / Kraut, E. A. / Harrison, W. A. et al. | 1990
- 741
-
GaAs/GaP strained‐layer superlattices grown by atomic layer epitaxyOzeki, M. / Kodama, K. / Sakuma, Y. / Ohtsuka, N. / Takanohashi, T. et al. | 1990
- 747
-
Band offset measurements for AlSb/ZnTe heterojunctionsSchwartz, G. P. / Gualtieri, G. J. / Feldman, R. D. / Austin, R. F. / Nuzzo, R. G. et al. | 1990
- 751
-
Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical propertiesGrundmann, M. / Lienert, U. / Christen, J. / Bimberg, D. / Fischer‐Colbrie, A. / Miller, J. N. et al. | 1990
- 758
-
The effect of strain on the valence band structure of InAs(100)Williams, M. D. / Chiu, T. H. et al. | 1990
- 760
-
Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum wellWilke, W. G. / Maierhofer, Ch. / Horn, K. et al. | 1990
- 768
-
Measurement of AlAs/InP and InP/In0.52Al0.48As heterojunction band offsets by x‐ray photoemission spectroscopyWaldrop, J. R. / Kraut, E. A. / Farley, C. W. / Grant, R. W. et al. | 1990
- 773
-
Interface strain at the lattice‐matched In0.53Ga0.47As/InP(001) heterointerfaceHybertsen, Mark S. et al. | 1990
- 779
-
Transport properties and applications of unstrained In0.75Ga0.25As/Al0.6Ga0.4As heterojunctionsRossi, D. V. / Fossum, E. R. / Kirchner, P. D. / Woodall, J. M. et al. | 1990
- 783
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Effects of interface donors on far infrared photoresponse at cyclotron resonance in a (AlGa)As/GaAs heterojunctionGrimes, R. T. / Chamberlain, J. M. / Hughes, O. H. / Henini, M. / Hill, G. et al. | 1990
- 787
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Photoexcited carrier lifetimes and spatial transport in surface‐free GaAs homostructuresSmith, L. M. / Wolford, D. J. / Martinsen, J. / Venkatasubramanian, R. / Ghandhi, S. K. et al. | 1990
- 793
-
Full‐zone k⋅p theory of semiconductor superlattice electronic structureMailhiot, C. / Smith, D. L. et al. | 1990
- 798
-
Inequivalence of normal and inverted interfaces of molecular‐beam epitaxy grown AlGaAs/GaAs quantum wellsKöhrbrück, R. / Munnix, S. / Bimberg, D. / Mars, D. E. / Miller, J. N. et al. | 1990
- 805
-
Growth of Ca0.43Sr0.57F2 molecular beam epitaxy films on GaAs(100) at 560 °C studied by photoemission spectroscopyStair, Kathleen / Zajac, G. / Chambers, F. / Engelhardt, M. A. / Höchst, H. et al. | 1990
- 810
-
Modeling of novel heterojunction tunnel structuresTing, D. Z.‐Y. / Yu, E. T. / Collins, D. A. / Chow, D. H. / McGill, T. C. et al. | 1990
- 817
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Electronic structure of a quasi‐one‐dimensional electron gas at finite temperatureYu, Hong / Hermanson, J. C. et al. | 1990
- 822
-
Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2Lucovsky, G. / Kim, S. S. / Fitch, J. T. et al. | 1990
- 832
-
Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilizationHollinger, G. / Gallet, D. / Gendry, M. / Santinelli, C. / Viktorovitch, P. et al. | 1990
- 838
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Formation of S–GaAs surface bondsGeib, K. M. / Shin, J. / Wilmsen, C. W. et al. | 1990
- 843
-
Electronic properties of NH3 adsorbed on InP(110) surfaces at room temperatureSalmagne, S. Rossi / Baier, H.‐U. / Mönch, W. et al. | 1990
- 848
-
In situ x‐ray photoelectron spectroscopic study of remote plasma enhanced chemical vapor deposition of silicon nitride on sulfide passivated InPLau, W. M. / Jin, S. / Wu, X.‐W. / Ingrey, S. et al. | 1990
- 856
-
Thermal and chemical stability of Se‐passivated GaAs surfacesTurco, F. S. / Sandroff, C. J. / Hedge, M. S. / Tamargo, M. C. et al. | 1990
- 860
-
Studies of GaAs–oxide interfaces with and without Si interlayerFreeouf, J. L. / Buchanan, D. A. / Wright, S. L. / Jackson, T. N. / Batey, J. / Robinson, B. / Callegari, A. / Paccagnella, A. / Woodall, J. M. et al. | 1990
- 867
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Characterization of InGaAs surface passivation structure having an ultrathin Si interface control layerHasegawa, Hideki / Akazawa, Masamichi / Ishii, Hirotatsu / Uraie, Atsuhiro / Iwadate, Hirokake / Ohue, Eiji et al. | 1990
- 874
-
Step structure and interface morphology: Arsenic on vicinal silicon surfacesOhno, T. R. / Williams, Ellen D. et al. | 1990
- 884
-
The structure of the ZnSe(100)c(2×2) surfaceFarrell, H. H. / Tamargo, M. C. / Shibli, S. M. / Chang, Yeh et al. | 1990
- 888
-
New surface atomic structures for column V overlayers on the (110) surfaces of III–V compound semiconductorsLaFemina, John P. / Duke, C. B. / Mailhiot, Christian et al. | 1990
- 896
-
Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfacesChang, Yia‐Chung / Aspnes, D. E. et al. | 1990
- 900
-
Electronic states of Sb, Bi, Au, and Sn clusters on GaAs(110)Menon, Madhu / Allen, Roland E. et al. | 1990
- 903
-
Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometryFarrell, H. H. / Palmstro/m, C. J. et al. | 1990
- 908
-
Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)Yu, E. T. / Croke, E. T. / Chow, D. H. / Collins, D. A. / Phillips, M. C. / McGill, T. C. / McCaldin, J. O. / Miles, R. H. et al. | 1990
- 916
-
Band offsets and electron localization in semiconductor interfaces and superlatticesMatthai, C. C. / Bass, J. M / Oloumi, M. et al. | 1990
- 920
-
Optical properties of one‐dimensional electron gas in semiconductor quantum wiresWeiner, J. S. / Danan, G. / Pinczuk, A. / Valladares, J. / Pfeiffer, L. N. / West, K. et al. | 1990
- 923
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A proposed quantum wire structure: An ‘‘accumulation wire’’ at crossing heterointerfacesHarbury, Henry / Porod, Wolfgang et al. | 1990
- 929
-
Intersubband absorption in Si1−xGex/Si superlattices for long wavelength infrared detectorsRajakarunanayake, Y. / McGill, T. C. et al. | 1990
- 936
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Surface dielectric anisotropies and phase diagrams of (001) GaAsAspnes, D. E. / Florez, L. T. / Studna, A. A. / Harbison, J. P. et al. | 1990
- 940
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Bismuth and antimony adsorption on III–V(110) substrates: Growth, order, and structureFord, W. K. / Guo, T. / Lantz, S. L. / Wan, K. / Chang, S.‐L. / Duke, C. B. / Lessor, D. L. et al. | 1990
- 948
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Growth temperature and substrate orientation dependences of moving emission and ordering in Ga0.52 In0.48 PDeLong, M. C. / Taylor, P. C. / Olson, J. M. et al. | 1990
- 955
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Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110)Alonso, M. / Cimino, R. / Maierhofer, Ch. / Chassé, Th. / Braun, W. / Horn, K. et al. | 1990
- 964
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Transition metal–GaP(110) interfaces: The roles of impurity states and metallicityLudeke, R. / Prietsch, M. / McLean, A. B. / Santoni, A. et al. | 1990
- 974
-
Morphological study of Ag, In, Sb, and Bi overlayers on GaAs(100)Spindt, C. J. / Cao, R. / Miyano, K. E. / Lindau, I. / Spicer, W. E. / Pao, Y.‐C. et al. | 1990
- 980
-
Electronic structure of sodium atoms adsorbed on the GaAs(110) surfaceAllan, G. / Lannoo, M. / Priester, C. et al. | 1990
- 985
-
The role of ultrathin AlAs interlayers in determining the interface Fermi energy of the epitaxial NiAl/AlAs/n‐GaAs(001) systemChambers, S. A. / Loebs, V. A. / Doyle, D. H. et al. | 1990
- 990
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Scattering from ionized dopants in Schottky barriersvan Schilfgaarde, Mark et al. | 1990
- 995
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Low‐coverage metal‐induced unrelaxation of the semiconductor surface at Ag/InP(110) interfaces: A photoemission extended x‐ray absorption fine structure studyMangat, P. S. / Choudhary, K. M. / Kilday, D. / Margaritondo, G. et al. | 1990
- 1001
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Electrovoltaic effects and symmetric band bending: Inverse photoemission of epitaxial Bi/GaAs(110) between 60 and 300 KHu, Yong‐Jun / Wagener, T. J. / Jost, M. B. / Weaver, J. H. et al. | 1990
- 1008
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Metal/GaAs interface chemical and electronic properties: GaAs orientation dependenceChang, S. / Brillson, L. J. / Rioux, D. F. / Kime, Y. J. / Kirchner, P. D. / Pettit, G. D. / Woodall, J. M. et al. | 1990
- 1014
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Formation of In/GaP(1̄ 1̄ 1̄) interface studied by energy loss spectroscopy, x‐ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopyYu, M. R. / Wang, P. Q. / Jin, X. F. / Wang, X. et al. | 1990
- 1018
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Photovoltaic effects in photoemission studies of Schottky barrier formationHecht, M. H. et al. | 1990