Adsorption of N2H4 on silicon surfaces (English)
- New search for: Tindall, C.
- New search for: Li, L.
- New search for: Takaoka, O.
- New search for: Hasegawa, Y.
- New search for: Sakurai, T.
- New search for: Tindall, C.
- New search for: Li, L.
- New search for: Takaoka, O.
- New search for: Hasegawa, Y.
- New search for: Sakurai, T.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
15
, 3
;
1155-1158
;
1997
- Article (Journal) / Electronic Resource
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Title:Adsorption of N2H4 on silicon surfaces
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Contributors:Tindall, C. ( author ) / Li, L. ( author ) / Takaoka, O. ( author ) / Hasegawa, Y. ( author ) / Sakurai, T. ( author )
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Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 15, 3 ; 1155-1158
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1997-05-01
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Size:4 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 15, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 445
-
Approach for a three-dimensional on-chip quantification by secondary-ion mass spectrometry analysisGnaser, Hubert et al. | 1997
- 445
-
Applied Surface Science: Surface Chemical Imaging and Small Volume Analysis| 1997
- 452
-
Effects of oxygen flooding on sputtering and ionization processes during ion bombardmentTian, C. / Vandervorst, W. et al. | 1997
- 452
-
Depth Profiling| 1997
- 460
-
Optimized time-of-flight secondary ion mass spectroscopy depth profiling with a dual beam techniqueIltgen, K. / Bendel, C. / Benninghoven, A. / Niehuis, E. et al. | 1997
- 465
-
Nondestructive depth profiling in Auger electron spectroscopy by means of partial intensity analysisWerner, Wolfgang S. M. et al. | 1997
- 465
-
Advanced Quantitative Analysis| 1997
- 470
-
Growth and characterization of aluminum oxide thin films for evaluation as reference materialsGaarenstroom, Stephen W. et al. | 1997
- 470
-
Standard Materials, Methods, and Data: Honoring ASTM E42 20th Anniversary| 1997
- 478
-
Factors causing deterioration of depth resolution in Auger electron spectroscopy depth profiling of multilayered systemsSatori, K. / Haga, Y. / Minatoya, R. / Aoki, M. / Kajiwara, K. et al. | 1997
- 485
-
Surface chemical analysis: Comparing and exchanging dataSeah, M. P. et al. | 1997
- 493
-
MAXMIND—Data storage and evaluation environment in surface analysisBrandl, K. W. / Störi, H. et al. | 1997
- 500
-
Aspects of Applied Surface Science Poster Session| 1997
- 500
-
Nanometer-scale structure of hectorite–aniline intercalatesPorter, Timothy L. / Thompson, D. / Bradley, M. / Eastman, Michael P. / Hagerman, Michael E. / Attuso, Jennifer L. / Votava, Amy E. / Bain, Edlin D. et al. | 1997
- 505
-
X-ray photoelectron spectroscopy study of the chemical interaction between BN and Ti/TiNSeal, Sudipta / Barr, Tery L. / Sobczak, Natalie / Benko, Ewa et al. | 1997
- 513
-
Metal overlayers on organic functional groups of self-organized molecular assemblies: VII. Ion scattering spectroscopy and x-ray photoelectron spectroscopy of andHerdt, G. C. / Czanderna, A. W. et al. | 1997
- 520
-
Extracting more chemical information from X-ray photoelectron spectroscopy by using monochromatic X raysSherwood, Peter M. A. et al. | 1997
- 526
-
Determination of the surface silanol concentration of amorphous silica surfaces using static secondary ion mass spectroscopyD’Souza, Andrew S. / Pantano, Carlo G. / Kallury, Krishna M. R. et al. | 1997
- 526
-
Insulators, Glasses, and Oxides| 1997
- 532
-
Structure and composition of oxidized aluminum on NiO(100)Imaduddin, S. / Lad, R. J. et al. | 1997
- 538
-
High resolution electron energy loss spectroscopy study of vapor-deposited polyaniline thin filmsPlank, R. V. / DiNardo, N. J. / Vohs, J. M. et al. | 1997
- 538
-
Polymer Surfaces| 1997
- 544
-
Study of poly(ether sulfone)/metal interfaces by high energy x-ray photoelectron spectroscopy and x-ray absorption spectroscopyTegen, N. / Morton, S. A. / Watts, J. F. et al. | 1997
- 544
-
Polymer Interfaces and Adhesion| 1997
- 550
-
Determination of electron temperatures in plasmas by multiple rare gas optical emission, and implications for advanced actinometryMalyshev, M. V. / Donnelly, V. M. et al. | 1997
- 550
-
Plasma Science and Technology: High Density Plasma I| 1997
- 559
-
Direct simulation Monte Carlo computation of reactor-feature scale flowsHudson, Mary L. / Bartel, Timothy J. et al. | 1997
- 559
-
Deposition -- PECVD| 1997
- 564
-
Effects of the axial external magnetic field on the reduction of the dielectric window damage due to capacitive coupling in the inductively coupled plasmaKim, Jung-Hun / Lee, Ho-Jun / Kim, Youn-Taeg / Whang, Ki-Woong / Joo, Jung-Hoon et al. | 1997
- 564
-
Oxide Etch I -- Mechanisms| 1997
- 568
-
radical densities during Si, , and etching employing electron cyclotron resonance plasmaMiyata, K. / Hori, M. / Goto, T. et al. | 1997
- 568
-
CFx(XMiyata, K. et al. | 1997
- 573
-
Study of shallow silicon trench etch process using planar inductively coupled plasmasLee, Ju-Hoon / Yeom, Geun-Young / Lee, Ju-Wook / Lee, Jung-Yong et al. | 1997
- 573
-
High Density Plasmas and Etching Poster Session| 1997
- 579
-
Aspect ratio effects in submicron contact hole plasma etching investigated by quantitative x-ray photoelectron spectroscopyLe Goff, C. / Peignon, M. C. / Turban, G. / Bilhant, R. et al. | 1997
- 585
-
Hole-size dependent highly selective etching with a hexthode-type wide-gap plasma etcherHosomi, Shinichi / Omori, Nobuhiko et al. | 1997
- 590
-
Physical damage and contamination by magnetized inductively coupled plasmas and effects of various cleaning and annealing methodsNam, Wook-Jun / Yeom, Geun-Young / Kim, Jung-Hun / Whang, Ki-Woong / Yoon, Jong-Ku et al. | 1997
- 596
-
Insight into the dry etching of fence-free patterned platinum structuresMilkove, K. R. / Wang, C. X. et al. | 1997
- 604
-
Cl2 plasma etching of Si(100): Damaged surface layer studied by in situ spectroscopic ellipsometryLayadi, N. / Donnelly, V. M. / Lee, J. T. C. / Klemens, F. P. et al. | 1997
- 604
-
Etch I| 1997
- 610
-
Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl2, and Cl+ beam scatteringChang, Jane P. / Sawin, Herbert H. et al. | 1997
- 616
-
Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion sourceHryniewicz, John V. / Chen, Y. J. / Hsu, Shih Hsiang / Lee, Chau-Han D. / Porkolab, Gyorgy A. et al. | 1997
- 616
-
Etching of III-V Materials| 1997
- 622
-
Dry etching of InGaP in magnetron enhanced BCl3 plasmasMcLane, G. F. / Wood, M. C. / Eckart, D. W. / Lee, J. W. / Lee, K. N. / Pearton, S. J. / Abernathy, C. R. et al. | 1997
- 626
-
Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching usingEtrillard, J. / Ossart, P. / Patriarche, G. / Juhel, M. / Bresse, J. F. / Daguet, C. et al. | 1997
- 633
-
High-density plasma etching of compound semiconductorsShul, R. J. / McClellan, G. B. / Briggs, R. D. / Rieger, D. J. / Pearton, S. J. / Abernathy, C. R. / Lee, J. W. / Constantine, C. / Barratt, C. et al. | 1997
- 638
-
Plasma etching of III-nitrides in ICl/Ar and IBr/Ar plasmasVartuli, C. B. / Pearton, S. J. / Lee, J. W. / MacKenzie, J. D. / Abernathy, C. R. / Shul, R. J. et al. | 1997
- 643
-
Essential points for precise etching processes in pulse-time-modulated ultrahigh-frequency plasmaSamukawa, Seiji / Tsukada, Tsutomu et al. | 1997
- 643
-
Pulsed Plasma Processing| 1997
- 647
-
Deposition and Plasma Ion Implantation Poster Session| 1997
- 647
-
Determining the number of chemical steps responsible, for the distribution of molecular species within an electron cyclotron resonance-microwave plasmaWebb, S. F. / Gaddy, G. A. / Blumenthal, Rik et al. | 1997
- 654
-
Sheath thickness in very-high-frequency plasma chemical vapor deposition of hydrogenated amorphous siliconvan Sark, W. G. J. H. M. / Meiling, H. / Hamers, E. A. G. / Bezemer, J. / van der Weg, W. F. et al. | 1997
- 659
-
Diagnosing contact etch stop with optical emissionMcNevin, S. C. / Cerullo, M. et al. | 1997
- 659
-
Oxide Etch II -- Etch Stop| 1997
- 664
-
Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching systemDoh, Hyun-Ho / Yeon, Chung-Kyu / Whang, Ki-Woong et al. | 1997
- 668
-
Homogeneity characterization of a large microwave plasmaBéchu, S. / Boisse-Laporte, C. / Leprince, P. / Marec, J. et al. | 1997
- 668
-
High Density Plasmas II| 1997
- 673
-
Frequency dependence of helicon wave plasmas near lower hybrid resonance frequencyYun, Seok-Min / Kim, Jung-Hyung / Chang, Hong-Young et al. | 1997
- 678
-
Diagnostics, Fundamentals, Modeling, and ICF Poster Session| 1997
- 678
-
Characterization of wall conditions in DIII-DHoltrop, K. L. / Jackson, G. L. / Kellman, A. G. / Lee, R. L. / West, W. P. / Wood, R. D. / Whyte, D. G. et al. | 1997
- 683
-
Fabrication of cross-linked polymer shells for inertial confinement fusion experimentsKubo, Uichi / Nakano, Hitoshi / Kim, Hyo-gun et al. | 1997
- 686
-
Angular dependence of the polysilicon etch rate during dry etching in andHedlund, C. / Jonsson, L. B. / Katardjiev, I. V. / Berg, S. / Blom, H.-O. et al. | 1997
- 686
-
Etch II| 1997
- 692
-
Etch III| 1997
- 692
-
Electrical-stress simulation of plasma-damage to submicron metal–oxide–silicon field-effect transistors: Comparison between direct current and alternating current stressesTrabzon, L. / Awadelkarim, O. O. et al. | 1997
- 697
-
Minimizing metal etch rate pattern sensitivity in a high density plasma etcherGabriel, Calvin T. / Zheng, Jie / Abraham, Susan C. et al. | 1997
- 702
-
Performance of different etch chemistries on titanium nitride antireflective coating layers and related selectivity and microloading improvements for submicron geometries obtained with a high-density metal etcherAbraham, S. C. / Gabriel, C. T. / Zheng, J. et al. | 1997
- 707
-
Deposition III -- Metals and Sputtering| 1997
- 707
-
Tantalum metallization using an electron–cyclotron-resonance plasma source coupled with divided microwavesNishimura, H. / Ono, T. / Oda, M. / Matsuo, S. et al. | 1997
- 712
-
Reactive-sputtering of titanium oxide thin filmsGuerin, D. / Shah, S. Ismat et al. | 1997
- 716
-
Operational experience of novel vacuum chambers incorporating massive titanium-sublimation pumping in the Cornell electron–positron storage ring interaction regionKersevan, Roberto / Li, Yulin / Mistry, Nariman B. et al. | 1997
- 716
-
Vacuum Technology: Accelerators and Gas-Beam Interactions in Accelerators| 1997
- 723
-
Installation of a 14 mm vacuum chamber for an undulator in the 1.3 GeV storage ring at Synchrotron Radiation Research CenterHsiung, G. Y. / Wang, D. J. / Shyy, J. G. / Hsu, S. N. / Hsiao, K. M. / Lin, M. C. / Chen, J. R. et al. | 1997
- 728
-
Calculated physical adsorption isotherms of neon and radon on a heterogeneous surfaceHobson, J. P. et al. | 1997
- 731
-
Tests of an environmental and personnel safe cleaning process for Brookhaven National Laboratory accelerator and storage ring componentsFoerster, C. L. / Lanni, C. / Lee, R. / Mitchell, G. / Quade, W. et al. | 1997
- 736
-
Synchrotron radiation induced desorption from aluminum surfacesChen, J. R. / Hsiung, G. Y. / Huang, J. R. / Chang, C. M. / Liu, Y. C. et al. | 1997
- 740
-
Cold cathode gauges for ultrahigh vacuum measurementsKendall, B. R. F. / Drubetsky, E. et al. | 1997
- 740
-
Calibration and Precision Gauging| 1997
- 747
-
Precision gas flowmeter for vacuum calibrationLevine, P. D. / Sweda, J. R. et al. | 1997
- 753
-
Calibration of an axial symmetric transmission gauge in ultrahigh and extreme high vacuumAkimichi, H. / Arai, T. / Takeuchi, K. / Tuzi, Y. / Arakawa, I. et al. | 1997
- 759
-
Application of a high critical temperature superconductor bearing for high vacuum measurementChew, A. D. / Chambers, A. / Troup, A. P. et al. | 1997
- 759
-
Developments in Vacuum Science and Technology| 1997
- 763
-
Gas permeation and leakage through reusable sealsJohnson, M. L. / Manos, D. M. / Provost, T. et al. | 1997
- 768
-
Experimental approach to a biological characterization of materialsNygren, Håkan / Eriksson, Cecilia et al. | 1997
- 768
-
Biomaterial Interfaces: Protein-Surface Interactions| 1997
- 773
-
Evidence for covalent attachment of purple membrane to a gold surface via genetic modification of bacteriorhodopsinBrizzolara, Robert A. / Boyd, Jennifer L. / Tate, Ann E. et al. | 1997
- 779
-
Cell-Surface Interactions| 1997
- 779
-
Electrical characterization of Uromyces germ tubes grown on integrated circuit substratesMcNally, Helen A. / Kozicki, Michael N. / Roberson, Robert W. / Whidden, Thomas K. et al. | 1997
- 784
-
Electronic Materials and Processing: Ultrathin Dielectrics| 1997
- 784
-
Image force effects and the dielectric response of in electron transport across metal–oxide–semiconductor structuresWen, H. J. / Ludeke, R. / Newns, D. M. / Lo, S. H. et al. | 1997
- 790
-
Analysis of interface roughness’s effect on metal–oxide–semiconductor Fowler-Nordheim tunneling behavior using atomic force microscope imagesLin, Heng-Chih / Ying, Ji-Feng / Yamanaka, Toshiyaki / Fang, Simon J. / Helms, C. R. et al. | 1997
- 797
-
Rapid thermal processing of III-nitridesHong, J. / Lee, J. W. / Vartuli, C. B. / Abernathy, C. R. / MacKenzie, J. D. / Donovan, S. M. / Pearton, S. J. / Zolper, J. C. et al. | 1997
- 797
-
Growth and Processing of Wide Band Gap Semiconductors for Optoelectronics| 1997
- 802
-
Comparison of ohmic metallization schemes for InGaAlNRen, F. / Vartuli, C. B. / Pearton, S. J. / Abernathy, C. R. / Donovan, S. M. / MacKenzie, J. D. / Shul, R. J. / Zolper, J. C. / Lovejoy, M. L. / Baca, A. G. et al. | 1997
- 807
-
Real-time monitoring of surface processes by -polarized reflectanceDietz, N. / Sukidi, N. / Harris, C. / Bachmann, K. J. et al. | 1997
- 807
-
In Situ Characterization of Materials and Processes| 1997
- 816
-
Optimization of an electron cyclotron resonance etch process using full wafer charge coupled device interferometryPendharkar, S. V. / Resnick, D. J. / Dauksher, W. J. / Cummings, K. D. / Tepermeister, I. / Conner, W. T. et al. | 1997
- 820
-
In situ analysis of Si(100) surface damage induced by low-energy rare-gas ion bombardment using x-ray photoelectron spectroscopyIshii, Masahiko / Hirose, Yoshiharu / Sato, Toshikazu / Ohwaki, Takeshi / Taga, Yasunori et al. | 1997
- 825
-
Ion-scattering spectroscopy during InGaAs molecular beam epitaxy: Reduction of sputtering using glancing-angle Ar ionsLabanda, J. G. C. / Barnett, S. A. et al. | 1997
- 830
-
Design of a scanning tunneling microscope for in situ topographic and spectroscopic measurements within a commercial molecular beam epitaxy machineVentrice, Jr., C. A. / LaBella, V. P. / Schowalter, L. J. et al. | 1997
- 836
-
Electronic Materials and Processing Poster Session I| 1997
- 836
-
Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si–O–F alloy filmsLucovsky, G. / Yang, H. et al. | 1997
- 844
-
Vapor deposition polymerization of polyimide for microelectronic applicationsMalba, Vincent / Liberman, Vladimir / Bernhardt, Anthony F. et al. | 1997
- 850
-
Study of oxidized cadmium zinc telluride surfacesChen, K.-T. / Shi, D. T. / Chen, H. / Granderson, B. / George, M. A. / Collins, W. E. / Burger, A. / James, R. B. et al. | 1997
- 854
-
Nickel doping of boron–carbon alloy films and corresponding Fermi level shiftsHwang, Seong-Don / Remmes, N. / Dowben, P. A. / McIlroy, D. N. et al. | 1997
- 860
-
Silicon and germanium nanoparticle formation in an inductively coupled plasma reactorGorla, C. R. / Liang, S. / Tompa, G. S. / Mayo, W. E. / Lu, Y. et al. | 1997
- 865
-
Real-time ultraviolet ellipsometry monitoring of gate patterning in a high-density plasmaVallon, S. / Joubert, O. / Vallier, L. / Ferrieu, F. / Drévillon, B. / Blayo, N. et al. | 1997
- 871
-
Chlorine chemisorption and reaction on the Si(111) surface and its characterization using second-harmonic generationHaraichi, Satoshi / Sasaki, Fumio et al. | 1997
- 875
-
Fowler–Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk siliconJiang, J. / Awadelkarim, O. O. / Werking, J. / Bersuker, G. / Chan, Y. D. et al. | 1997
- 875
-
Electronic Materials and Processing Poster Session II| 1997
- 880
-
Low energy cathodoluminescence spectroscopy of nanoparticlesYang, X. / Law, K.-Y. / Brillson, L. J. et al. | 1997
- 885
-
Comparison of dry etch chemistries for SiCMcDaniel, G. / Lee, J. W. / Lambers, E. S. / Pearton, S. J. / Holloway, P. H. / Ren, F. / Grow, J. M. / Bhaskaran, M. / Wilson, R. G. et al. | 1997
- 890
-
Damage investigation in AlGaAs and InGaP exposed to high ion density Ar and SF6 plasmasLee, J. W. / Lee, K. N. / Stradtmann, R. R. / Abernathy, C. R. / Pearton, S. J. / Hobson, W. S. / Ren, F. et al. | 1997
- 894
-
Secondary ion mass spectrometry study of silicon surface preparation and the polystyrene/silicon interfaceStrzhemechny, Y. M. / Schwarz, S. A. / Schachter, J. / Rafailovich, M. H. / Sokolov, J. et al. | 1997
- 899
-
Surface chemistry of the N-containing precursor dimethylhydrazine on CuSun, Y.-M. / White, J. M. / Kamath, A. / Kwong, D. L. et al. | 1997
- 905
-
Compositional characterization of very thin SiO2/Si3N4/SiO2 stacked films by x-ray photoemission spectroscopy and time-of-flight-secondary-ion-mass spectroscopy techniquesSantucci, S. / Lozzi, L. / Ottaviano, L. / Passacantando, M. / Picozzi, P. / Moccia, G. / Alfonsetti, R. / Di Giacomo, A. / Fiorani, P. et al. | 1997
- 911
-
Comparison between ultraviolet-photoelectron spectroscopy and reflection high-energy electron diffraction intensity oscillations during Si epitaxial growth on Si(100)Enta, Y. / Irimachi, H. / Suemitsu, M. / Miyamoto, N. et al. | 1997
- 915
-
Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)ABelk, J. G. / Sudijono, J. L. / Yamaguchi, H. / Zhang, X. M. / Pashley, D. W. / McConville, C. F. / Jones, T. S. / Joyce, B. A. et al. | 1997
- 915
-
Strain-Mediated Kinetics in Epitaxial Growth| 1997
- 919
-
Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor depositionLin, D.-S. / Miller, T. / Chiang, T.-C. et al. | 1997
- 927
-
Effect of atomic hydrogen on the growth of Ge/Si(100)Kahng, Se-Jong / Park, J. Y. / Booh, K. H. / Lee, J. / Khang, Y. / Kuk, Y. et al. | 1997
- 930
-
In situ measurements of temperature-dependent strain relaxation of Ge/Si(111)Deelman, P. W. / Schowalter, L. J. / Thundat, T. et al. | 1997
- 936
-
Thin Film: Mechanical Properties| 1997
- 936
-
Atomistic simulations of the nanometer-scale indentation of amorphous-carbon thin filmsSinnott, S. B. / Colton, R. J. / White, C. T. / Shenderova, O. A. / Brenner, D. W. / Harrison, J. A. et al. | 1997
- 941
-
Multilayer film deposition of TiN/AlN on a rotating substrate holder from reactive sputtering of elemental targets of titanium and aluminumJensen, H. / Sobota, J. / Sorensen, G. et al. | 1997
- 946
-
Preparation and characterization of superhard multilayersWu, Mei-Ling / Lin, Xi-Wei / Dravid, Vinayak P. / Chung, Yip-Wah / Wong, Ming-Show / Sproul, William D. et al. | 1997
- 951
-
Microstructure and surface morphology of cryogenic processed thin metal films studied by atomic force microscopeHe, L. et al. | 1997
- 951
-
Thin Film Poster Session I| 1997
- 954
-
Morphological study of GaAs grown by periodic supply epitaxy on (111) B substratesAllegretti, F. E. / Roberts, C. / Neave, J. H. et al. | 1997
- 958
-
Preparation of highly transparent and conducting Ga2O3–In2O3 films by direct current magnetron sputteringMinami, T. / Takeda, Y. / Kakumu, T. / Takata, S. / Fukuda, I. et al. | 1997
- 963
-
Mechanical and fracture toughness studies of amorphous SiC–N hard coatings using nanoindentationScharf, Thomas W. / Deng, Hong / Barnard, John A. et al. | 1997
- 968
-
SiGe/Ge heterojunction infrared detectorJiang, R. L. / Gu, S. L. / Jiang, N. / Li, Z. / Xu, J. / Zhu, S. M. / Hu, L. Q. / Zheng, Y. D. et al. | 1997
- 971
-
Photoluminescence and photoreflectance studies of defects in GaAs epitaxial layers grown by liquid phase epitaxy at different supercooling temperaturesTorres-Delgado, G. / Mendoza‐Alvarez, J. G. / Vazquez-Lopez, C. / Alejo-Armenta, C. et al. | 1997
- 976
-
Modeling of Ge segregation in the limits of zero and infinite surface diffusionGodbey, D. J. / Ancona, M. G. et al. | 1997
- 976
-
Modeling of Thin Film Deposition| 1997
- 981
-
Surface smoothing with energetic cluster beamsInsepov, Z. / Yamada, I. / Sosnowski, M. et al. | 1997
- 985
-
Effect of interface on the characteristics of functional films deposited on polycarbonate in dual-frequency plasmaKlemberg-Sapieha, J. E. / Poitras, D. / Martinu, L. / Yamasaki, N. L. S. / Lantman, C. W. et al. | 1997
- 985
-
Industrial-Scale Deposition: Focus on Optical Coatings| 1997
- 992
-
Five layer stack of nitride, oxide, and amorphous silicon on glass, analyzed with spectroscopic ellipsometryTompkins, Harland G. / Williams, Phillip H. et al. | 1997
- 992
-
In Situ and Ex Situ Characterization I| 1997
- 998
-
Determining the optical properties of a mixed-metal oxide film, with spectroscopic ellipsometry and atomic force microscopyRuzakowski Athey, P. / Tabet, M. F. / Urban, F. K. et al. | 1997
- 1007
-
In Situ and Ex Situ Characterization II| 1997
- 1007
-
Characterization of the low-pressure chemical vapor deposition grown rugged polysilicon surface using atomic force microscopyStrausser, Yale E. / Schroth, Michael / Sweeney III, John J. et al. | 1997
- 1014
-
Rectifying behavior of silicon–phthalocyanine junctions investigated with scanning tunneling microscopy/spectroscopyOttaviano, L. / Santucci, S. / Di Nardo, S. / Lozzi, L. / Passacantando, M. / Picozzi, P. et al. | 1997
- 1020
-
Application of plasma enhanced chemical vapor deposition silicon nitride as a double layer antireflection coating and passivation layer for polysilicon solar cellsWinderbaum, S. / Yun, F. / Reinhold, O. et al. | 1997
- 1020
-
Thin Film Poster Session II| 1997
- 1026
-
Metal vapor sources for scientific research and thin film technology: ReviewZolkin, Alexander S. et al. | 1997
- 1032
-
Evidence of aging effects in sputtered ZrN films from positron annihilationBrunner, J. / Perry, A. J. et al. | 1997
- 1035
-
Low-temperature (< 450 C), plasma-assisted deposition of poly-Si thin films on SiO~2 and glass through interface engineeringWolfe, D. M. / Wang, F. / Lucovsky, G. et al. | 1997
- 1035
-
Low-temperature (<450 °C), plasma-assisted deposition of poly-Si thin films on and glass through interface engineeringWolfe, D. M. / Wang, F. / Lucovsky, G. et al. | 1997
- 1041
-
Growth mechanism of cubic boron nitride thin films by ion beam assist sputter depositionPark, K. S. / Lee, D. Y. / Kim, K. J. / Moon, D. W. et al. | 1997
- 1048
-
Influence of strain on semiconductor thin film epitaxyFitzgerald, E. A. / Samavedam, S. B. / Xie, Y. H. / Giovane, L. M. et al. | 1997
- 1048
-
Semiconductor Thin Films| 1997
- 1057
-
Properties of transparent conducting oxides formed from CdO and ZnO alloyed with andWu, X. / Coutts, T. J. / Mulligan, W. P. et al. | 1997
- 1057
-
Transparent Conducting Films| 1997
- 1063
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Transparent and conductive Ga-doped ZnO films grown by low pressure metal organic chemical vapor depositionLi, Y. / Tompa, G. S. / Liang, S. / Gorla, C. / Lu, Y. / Doyle, John et al. | 1997
- 1069
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Highly transparent and conductive thin films prepared by atmospheric pressure chemical vapor depositionMinami, T. / Kumagai, H. / Kakumu, T. / Takata, S. / Ishii, M. et al. | 1997
- 1074
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Film properties of ZnO:Al prepared by cosputtering of ZnO:Al and either Zn or Al targetsTominaga, Kikuo / Manabe, Haruhiko / Umezu, Norio / Mori, Ichiro / Ushiro, Tomoko / Nakabayashi, Ichiro et al. | 1997
- 1080
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Pulsed laser deposition of conductive SrRuO3 thin filmsJia, Q. X. / Foltyn, S. R. / Hawley, M. / Wu, X. D. et al. | 1997
- 1080
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Vacuum Metallurgy: Advances in Deposition Technology| 1997
- 1084
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Crystalline alumina deposited at low temperatures by ionized magnetron sputteringSchneider, Jochen M. / Sproul, William D. / Voevodin, Andrey A. / Matthews, Allan et al. | 1997
- 1089
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Materials processing with intense pulsed ion beamsRej, D. J. / Davis, H. A. / Olson, J. C. / Remnev, G. E. / Zakoutaev, A. N. / Ryzhkov, V. A. / Struts, V. K. / Isakov, I. F. / Shulov, V. A. / Nochevnaya, N. A. et al. | 1997
- 1098
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Tailored Multifunctionality in Thin Films| 1997
- 1098
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Multifunctional multilayer optical coatingsMartin, P. M. / Stewart, D. C. / Bennett, W. D. / Affinito, J. D. / Gross, M. E. et al. | 1997
- 1103
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Epitaxial growth of ZnO thin films on -plane sapphire substrate by radio frequency magnetron sputteringKim, Young Jin / Kim, Yoo Taek / Yang, Hyung Kook / Park, Jong Chul / Han, Jung In / Lee, Yong Eui / Kim, Hyeong Joon et al. | 1997
- 1103
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Epitaxial growth of ZnO thin films on R-plane sapphire substrate by radio frequency magnetron sputtering Young Jin Kim and Yoo Taek KimYoung Jin Kim / Yoo Taek Kim / Hyung Kook Yang / Jong Chul Park / Jung In Han / Yong Eui Lee / Hyeong Joon Kim et al. | 1997
- 1108
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Morphology and phase of tin oxide thin films during their growth from the metallic tinChung, Y. S. / Hubenko, A. / Meyering, L. / Schade, M. / Zimmer, J. / Remmel, T. et al. | 1997
- 1113
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Dependence of microstructure and thermochromism on substrate temperature for sputter-deposited epitaxial filmsJin, P. / Yoshimura, K. / Tanemura, S. et al. | 1997
- 1118
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CUMULATIVE AUTHOR INDEX| 1997
- 1119
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Novel method for growing CdS on CdTe surfaces for passivation of surface states and heterojunction formationNelson, Art J. / Levi, Dean et al. | 1997
- 1119
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Electronic Materials-Surface Science: Surface Chemistry| 1997
- 1124
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Metal-dependent Fermi-level movement in the metal/sulfur-passivated InGaP contactKim, Y. K. / Kim, Sehun / Seo, J. M. / Ahn, S. / Kim, K. J. / Kang, T.-H. / Kim, B. et al. | 1997
- 1129
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Hydrogen on Semiconductor Surfaces| 1997
- 1129
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Hydrogen desorption from ion-roughened Si(100)Hess, G. / Russell, M. / Gong, B. / Parkinson, P. / Ekerdt, J. G. et al. | 1997
- 1135
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Photochemical routes to silicon epitaxyDippel, O. / Wright, S. / Hasselbrink, E. et al. | 1997
- 1140
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Reactions of diethylgermane, triethylgermane, and ethyl groups on Ge(100)Chen, Jihong / Greenlief, C. Michael et al. | 1997
- 1140
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Reactions on Semiconductor Surfaces| 1997
- 1146
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Thermal decomposition reactions of acetaldehyde and acetone on Si(100)Armstrong, J. L. / White, J. M. / Langell, M. et al. | 1997
- 1155
-
Adsorption of N2H4 on silicon surfacesTindall, C. / Li, L. / Takaoka, O. / Hasegawa, Y. / Sakurai, T. et al. | 1997
- 1159
-
Reaction of dimethylzinc and diethylzinc on the As-rich GaAs(100)-c(4 x 4) surfaceLam, H.-T. et al. | 1997
- 1159
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Reaction of dimethylzinc and diethylzinc on the As-rich GaAs(100)- surfaceLam, H.-T. / Venkateswaran, N. / Vohs, J. M. et al. | 1997
- 1163
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Adsorption state of hydrogen sulfide on the GaAs (001)-(4 x 2) surfaceChung, Chan-Hwa et al. | 1997
- 1163
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Adsorption state of hydrogen sulfide on the GaAs (001)-(4×2) surfaceChung, Chan-Hwa / Yi, Sang I. / Weinberg, W. Henry et al. | 1997
- 1168
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Dissociative adsorption of hydrogen sulfide on GaAs(100)-(2 x 4) and GaAs(100)-(4 x 2) surfacesYi, Sang I. et al. | 1997
- 1168
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Dissociative adsorption of hydrogen sulfide on GaAs(100)-(2×4) and GaAs(100)-(4×2) surfacesYi, Sang I. / Chung, Chan-Hwa / Weinberg, W. Henry et al. | 1997
- 1173
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Surface Science-Thin Film-Nanometer-Scale Science and Technology: Tribological Properties of Coatings and Lubricants| 1997
- 1173
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High resolution electron energy loss spectroscopy and photoelectron emission microscopy study of Fomblin Y on molybdenum surfacesMontei, Eric L. / Kordesch, Martin E. et al. | 1997
- 1179
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Use of sputtering and negative carbon ion sources to prepare carbon nitride filmsMurzin, Ivan H. / Tompa, Gary S. / Forsythe, Eric W. / Wei, Jianjun / Muratov, Victor / Fischer, Traugott et al. | 1997
- 1185
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Growth mechanism and structural studies of sputtered thin filmsWasa, Kiyotaka / Haneda, Yoko / Satoh, Toshifumi / Adachi, Hideaki / Setsune, Kentaro et al. | 1997
- 1185
-
Thin Film-Vacuum Metallurgy: Microstructure Development| 1997
- 1190
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X-ray studies on (110) fiber texture in FeTaN films using Ti underlayersKlemmer, T. J. / Inturi, V. R. / Barnard, J. A. et al. | 1997
- 1194
-
Effect of oblique sputtering on microstructural modification of ZnO thin filmsLee, Yong Eui / Kim, Soo Gil / Kim, Young Jin / Kim, Hyeong Joon et al. | 1997
- 1200
-
Ion beam induced surface modification of chemical vapor deposition diamond for x-ray beam position monitor applicationsLiu, Chian / Shu, D. / Kuzay, T. M. / Wen, L. / Melendres, C. A. et al. | 1997
- 1200
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Thin Film Hard Coatings| 1997
- 1206
-
Determination of the components of stress in a polycrystalline diamond film using polarized Raman spectroscopyMossbrucker, J. / Grotjohn, T. A. et al. | 1997
- 1211
-
Properties of films on sapphire prepared by electron cyclotron resonance oxygen-plasma-assisted depositionMoulzolf, S. C. / Yu, Yan / Frankel, D. J. / Lad, R. J. et al. | 1997
- 1215
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Fabrication of spin-current field-effect transistor structuresCabbibo, A. / Childress, J. R. / Pearton, S. J. / Ren, F. / Kuo, J. M. et al. | 1997
- 1215
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Nanometer-Scale Science and Technology-Magnetic Surfaces and Interfaces: Novel Nanoscale Devices and Memories| 1997
- 1220
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Microelectrical Mechanical Systems-Manufacturing Science and Technology: Issues in Manufacturing and Design| 1997
- 1220
-
Microfabricated high intensity discharge lampsKhan, Babar A. / Pinker, Ronald D. / Cammack, David A. / Racz, Jacqueline et al. | 1997
- 1223
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Controlled growth of filmsLeGore, L. J. / Greenwood, O. D. / Paulus, J. W. / Frankel, D. J. / Lad, R. J. et al. | 1997
- 1223
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Thin Film-Surface Science: Thin Film Sensors| 1997
- 1228
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Comparison of interfacial and electronic properties of annealed Pd/SiC and Schottky diode sensorsChen, Liang-Yu / Hunter, Gary W. / Neudeck, Philip G. / Bansal, Gaurav / Petit, Jeremy B. / Knight, Dak et al. | 1997
- 1235
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Characterization of chemical interaction of asbestos surfaces during culturing with lung cellsSeal, Sudipta / Barr, Tery L. / Krezoski, Sue / Petering, David H. / Antholine, W. et al. | 1997
- 1235
-
Applied Surface Science-Biomaterial Interfaces: Aspects of Biomaterial Characterization| 1997
- 1246
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Electrostatically actuated micromechanical switchesMajumder, S. / McGruer, N. E. / Zavracky, P. M. et al. | 1997
- 1246
-
Microelectrical Mechanical Systems-Nanometer-Scale Science and Technology: Electromechanical Actuation on the Micro-Nano Scale| 1997
- 1250
-
Manufacturing Science and Technology-Plasma Science and Technology: Advanced Plasma Equipment: Radio Frequency Sensors and Controls| 1997
- 1250
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Characterization of an aluminum etching process in an inductively coupled discharge using measurements of discharge impedance and current and voltage sensorsPatrick, Roger / Lee, Chii-Guang / Hilliker, Steven E. / Moeller, Ronald D. et al. | 1997
- 1257
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Transmission electron microscopy study of granular Fe–Mg films made by gas evaporationMeng-Burany, X. / Phillips, J. / Hadjipanayis, G. et al. | 1997
- 1257
-
Nanometer-Scale Science and Technology-Surface Science: Properties of Nanostructures I| 1997
- 1261
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Characterization of metal clusters (Pd and Au) supported on various metal oxide surfaces (MgO and TiO2)Xu, C. et al. | 1997