Scattering mechanism of hole carriers in organic molecular semiconductors deduced from analyses of terahertz absorption spectra using Drude–Anderson model (English)
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- New search for: Miyamoto, T.
- New search for: Otaki, T.
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- New search for: Kida, N.
- New search for: Osakabe, N.
- New search for: Tsurumi, J.
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- New search for: Okamoto, T.
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- New search for: Miyamoto, T.
- New search for: Otaki, T.
- New search for: Takamura, N.
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- New search for: Osakabe, N.
- New search for: Tsurumi, J.
- New search for: Watanabe, S.
- New search for: Okamoto, T.
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In:
Applied Physics Letters
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120
, 5
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7
;
2022
- Article (Journal) / Electronic Resource
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Title:Scattering mechanism of hole carriers in organic molecular semiconductors deduced from analyses of terahertz absorption spectra using Drude–Anderson model
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Contributors:Han, Y. ( author ) / Miyamoto, T. ( author ) / Otaki, T. ( author ) / Takamura, N. ( author ) / Kida, N. ( author ) / Osakabe, N. ( author ) / Tsurumi, J. ( author ) / Watanabe, S. ( author ) / Okamoto, T. ( author ) / Takeya, J. ( author )
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Published in:Applied Physics Letters ; 120, 5 ; 7
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Publisher:
- New search for: AIP Publishing LLC
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Publication date:2022-01-31
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 120, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Heterodyne terahertz detection based on antenna-coupled AlGaN/GaN high-electron-mobility transistorFeng, Wei / Zhu, Yifan / Ding, Qingfeng / Zhu, Kaiqiang / Sun, Jiandong / Zhang, Jinfeng / Li, Xinxing / Shangguan, Yang / Jin, Lin / Qin, Hua et al. | 2022
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Step-like resistance changes in VO2 thin films grown on hexagonal boron nitride with in situ optically observable metallic domainsGenchi, Shingo / Yamamoto, Mahito / Iwasaki, Takuya / Nakaharai, Shu / Watanabe, Kenji / Taniguchi, Takashi / Wakayama, Yutaka / Tanaka, Hidekazu et al. | 2022
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Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic propertiesTakeuchi, Yutaro / Okuda, Ryotaro / Igarashi, Junta / Jinnai, Butsurin / Saino, Takaharu / Ikeda, Shoji / Fukami, Shunsuke / Ohno, Hideo et al. | 2022
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Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metalsUryu, Kazuya / Kiuchi, Shota / Sato, Taku / Suzuki, Toshi-kazu et al. | 2022
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Observation of magnetoelectric effect in the S = 1/2 spin chain compound CoSe2O5 single crystalLin, L. / Tang, Y. S. / Huang, L. / Zhai, W. J. / Zhou, G. Z. / Zhang, J. H. / Liu, M. F. / Li, G. Y. / Li, X. Y. / Yan, Z. B. et al. | 2022
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Distinctive Nb–O hybridization at domain walls in orthorhombic KNbO3 ferroelectric perovskiteThong, Hao-Cheng / Xu, Ben / Wang, Ke et al. | 2022
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Thickness dependence of quantum transport in the topological superconductor candidate SnTaS2Zhu, Mengcheng / Chen, Dong / Zhu, Ankang / Wu, Yuelong / Han, Minglong / Han, Yuyan / Zheng, Guolin / Gao, Wenshuai / Tian, Mingliang et al. | 2022
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In situ Raman spectroscopy across superconducting transition of liquid-gated MoS2Zhang, Yijin / Zhao, Dong / Wang, Qixing / Smet, Jurgen H. et al. | 2022
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Scattering mechanism of hole carriers in organic molecular semiconductors deduced from analyses of terahertz absorption spectra using Drude–Anderson modelHan, Y. / Miyamoto, T. / Otaki, T. / Takamura, N. / Kida, N. / Osakabe, N. / Tsurumi, J. / Watanabe, S. / Okamoto, T. / Takeya, J. et al. | 2022
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Formation energy and optical excitation mechanisms of Er in GaN semi-bulk crystalsYan, Y. Q. / Li, J. / Lin, J. Y. / Jiang, H. X. et al. | 2022
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