Gap fill dependence of fluorinated polyimide films on solid content, adhesion promoter, spin dwell time, and solvent spray (English)
- New search for: Wang, Shi‐Qing
- New search for: Zhao, Bin
- New search for: Wang, Shi‐Qing
- New search for: Zhao, Bin
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
14
, 4
;
2656-2659
;
1996
- Article (Journal) / Electronic Resource
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Title:Gap fill dependence of fluorinated polyimide films on solid content, adhesion promoter, spin dwell time, and solvent spray
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Additional title:Gap fill dependence of polyimide films
-
Contributors:Wang, Shi‐Qing ( author ) / Zhao, Bin ( author )
-
Published in:
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1996-07-01
-
Size:4 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
-
Source:
Table of contents – Volume 14, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2399
-
Single‐electron charging of a molecule observed in scanning tunneling scattering experimentsNejo, H. / Aono, M. / Baksheyev, D. G. / Tkachenko, V. A. et al. | 1996
- 2403
-
Current characteristics in near field emission scanning tunneling microscopesMesa, G. / Sáenz, J. J. / García, R. et al. | 1996
- 2407
-
Morphological modeling of atomic force microscopy imaging including nanostructure probes and fibrinogen moleculesWilson, David L. / Kump, Kenneth S. / Benard, William / Xue, Ping / Marchant, Roger E. / Eppell, Steven J. et al. | 1996
- 2417
-
Scanning scattering microscope for surface microtopography and defect imagingLorincik, J. / Marton, D. / King, R. L. / Fine, J. et al. | 1996
- 2424
-
Scanning tunneling microscope study of defect structures on As‐terminated Si(001) surfacesJackson, M. D. / Leibsle, F. M. / Cole, R. J. / Gregory, D. A. C. / Woolf, D. A. / Weightman, P. et al. | 1996
- 2428
-
Simultaneous imaging of Si(111) 7×7 with atomic resolution in scanning tunneling microscopy, atomic force microscopy, and atomic force microscopy noncontact modeGüthner, Peter et al. | 1996
- 2432
-
Structure imaging by atomic force microscopy and transmission electron microscopy of different light emitting species of porous siliconSassaki, R. Massami / Douglas, R. A. / Kleinke, M. U. / Teschke, O. et al. | 1996
- 2438
-
Field emission characteristics of the scanning tunneling microscope for nanolithographyMayer, T. M. / Adams, D. P. / Marder, B. M. et al. | 1996
- 2445
-
Proximity effect correction for nanolithographyRau, Richard / McClellan, James H. / Drabik, Timothy J. et al. | 1996
- 2456
-
Independent parallel lithography using the atomic force microscopeMinne, S. C. / Manalis, S. R. / Atalar, A. / Quate, C. F. et al. | 1996
- 2462
-
Monte Carlo simulation of inclined incidence of fast electrons to solidsGueorguiev, Y. M. / Mladenov, G. M. / Ivanov, D. I. et al. | 1996
- 2467
-
Generation mechanism of distortion aberration in a symmetric magnetic doublet for an electron beam projection systemNakasuji, Mamoru / Shimizu, Hiroyasu et al. | 1996
- 2474
-
Reticle fabrication by high acceleration voltage electron beam: Representative figure method for proximity effect correction [VI]Abe, Takayuki et al. | 1996
- 2485
-
Surface tension, adhesion and wetting of materials for photolithographic processBauer, J. / Drescher, G. / Illig, M. et al. | 1996
- 2493
-
Polysilicon gate etching in high density plasmas. III. X‐ray photoelectron spectroscopy investigation of sidewall passivation of silicon trenches using an oxide hard maskBell, F. H. / Joubert, O. et al. | 1996
- 2500
-
Influence of patterning in silicon quantum well structures on photoluminescenceNamatsu, Hideo / Furuta, Tomofumi / Nagase, Masao / Kurihara, Kenji / Iwadate, Kazumi / Murase, Katsumi / Makino, Takahiro et al. | 1996
- 2505
-
Computer simulations of porous silicon formationWeng, Y. M. / Qiu, J. Y. / Zhou, Y. H. / Zong, X. F. et al. | 1996
- 2510
-
Comparison of advanced plasma sources for etching applications. V. Polysilicon etching rate, uniformity, profile control, and bulk plasma properties in a helical resonator plasma sourceLee, J. T. C. / Layadi, N. / Guinn, K. V. / Maynard, H. L. / Klemens, F. P. / Ibbotson, D. E. / Tepermeister, I. / Egan, P. O. / Richardson, R. A. et al. | 1996
- 2519
-
Surface morphologies for Br‐etched Si(100)‐2×1: Kinetics of pit growth and step retreatWilliams, F. J. / Aldao, C. M. / Weaver, J. H. et al. | 1996
- 2524
-
Deep‐etch silicon millimeter waveguide structure for electron accelerationWillke, T. L. / Feinerman, A. D. et al. | 1996
- 2531
-
Minimized response time of optical emission and mass spectrometric signals for optimized endpoint detectionThomas, S. / Chen, H. H. / Hanish, C. K. / Grizzle, J. W. / Pang, S. W. et al. | 1996
- 2537
-
Reactive ion etching of sloped sidewalls for surface emitting structures using a shadow mask techniqueJacobs, B. / Zengerle, R. et al. | 1996
- 2543
-
Comparison of the physical and electrical properties of electron cyclotron resonance and distributed electron cyclotron resonance SiO2Firon, M. / Hugon, M. C. / Agius, B. / Hu, Y. Z. / Wang, Y. / Irene, E. A. et al. | 1996
- 2550
-
Reactive‐ion etching of WSix in CF4+O2 and the associated damage in GaAsChan, Yi‐Jen / Su, Chao‐Shin / Sung, Kuo‐Tung et al. | 1996
- 2555
-
Characterization of electrical damage induced by CH4/H2 reactive ion etching of molecular beam epitaxial InAlAsAchouche, M. / Clei, A. / Harmand, J. C. et al. | 1996
- 2567
-
Cl2/Ar plasma etching of binary, ternary, and quaternary In‐based compound semiconductorsLee, J. W. / Hong, J. / Abernathy, C. R. / Lambers, E. S. / Pearton, S. J. / Hobson, W. S. / Ren, F. et al. | 1996
- 2574
-
Metal stack etching using a helical resonator plasmaLabelle, C. B. / Maynard, H. L. / Lee, J. T. C. et al. | 1996
- 2582
-
Microstructural stability of ohmic contacts to InxGa1−xNDurbha, A. / Pearton, S. J. / Abernathy, C. R. / Lee, J. W. / Holloway, P. H. / Ren, F. et al. | 1996
- 2588
-
Patterned eutectic bonding with Al/Ge thin films for microelectromechanical systemsVu, Bao / Zavracky, Paul M. et al. | 1996
- 2595
-
Simulation of three‐dimensional refractory metal step coverage over contact cuts and viasSheergar, M. K. / Smy, T. / Dew, S. K. / Brett, M. J. et al. | 1996
- 2603
-
Liner conformality in ionized magnetron sputter metal deposition processesHamaguchi, S. / Rossnagel, S. M. et al. | 1996
- 2609
-
High‐vacuum versus ‘‘environmental’’ electron beam depositionFolch, Albert / Servat, Jordi / Esteve, Joan / Tejada, Javier / Seco, Miquel et al. | 1996
- 2615
-
Simulations of metal thin film thermal flow processesLiao, Hung / Cale, Timothy S. et al. | 1996
- 2623
-
Nonlinear analysis of the I–V characteristics in Ti/Si and TiSi2/Si Schottky diodesPérez‐Rigueiro, J. / Jiménez, C. / Pérez‐Casero, R. / Martínez‐Duart, J. M. et al. | 1996
- 2627
-
The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization processOuellet, L. / Tremblay, Y. / Gagnon, G. / Caron, M. / Currie, J. F. / Gujrathi, S. C. / Biberger, M. et al. | 1996
- 2636
-
Effects of oxide overlayer on thermal stress and yield behavior of Al alloy filmsYeo, I.‐S. / Anderson, S. G. H. / Jawarani, D. / Ho, P. S. / Clarke, A. P. / Saimoto, S. / Ramaswami, S. / Cheung, R. et al. | 1996
- 2645
-
Effects of insulator surface roughness on Al‐alloy film properties and electromigration performance in Al‐alloy/Ti insulator layered interconnectsOnoda, Hiroshi / Narita, Tadashi / Touchi, Kenshin / Hashimoto, Keiichi et al. | 1996
- 2656
-
Gap fill dependence of fluorinated polyimide films on solid content, adhesion promoter, spin dwell time, and solvent sprayWang, Shi‐Qing / Zhao, Bin et al. | 1996
- 2660
-
Characterization of the Si/SiO2 interface formed by remote plasma enhanced chemical vapor deposition from SiH4/N2O with or without chlorine additionPark, Young‐Bae / Li, Xiaodong / Rhee, Shi‐Woo et al. | 1996
- 2667
-
Oxide growth on silicon (100) in the plasma phase of dry oxygen using an electron cyclotron resonance sourceKim, Keunjoo / An, M. H. / Shin, Y. G. / Suh, M. S. / Youn, C. J. / Lee, Y. H. / Lee, K. B. / Lee, H. J. et al. | 1996
- 2674
-
Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor‐based metal–insulator–semiconductor devicesPark, D. G. / Tao, M. / Li, D. / Botchkarev, A. E. / Fan, Z. / Wang, Z. / Mohammad, S. N. / Rockett, A. / Abelson, J. R. / Morkoç, H. et al. | 1996
- 2684
-
B/Si(100) surface: Atomic structure and epitaxial Si overgrowthZhang, Z. / Kulakov, M. A. / Bullemer, B. / Eisele, I. / Zotov, A. V. et al. | 1996
- 2690
-
High phosphorus doping of epitaxial silicon at low temperature and very low pressureHuang, X. D. / Han, P. / Chen, H. / Zheng, Y. D. / Hu, L. Q. / Wang, R. H. / Zhu, S. M. / Feng, D. et al. | 1996
- 2693
-
Characterization by x‐ray photoelectron spectroscopy of the chemical structure of semi‐insulating polycrystalline silicon thin filmsIacona, Fabio / Lombardo, Salvatore / Campisano, Salvatore U. et al. | 1996
- 2701
-
Inherent possibilities and restrictions of plasma immersion ion implantation systemsMändl, S. / Brutscher, J. / Günzel, R. / Möller, W. et al. | 1996
- 2707
-
X‐ray photoelectron spectroscopy study on native oxidation of As‐implanted Si (100)Yano, Fumiko / Hiraoka, Akiko / Itoga, Toshihiko / Matsubara, Atsuko / Kojima, Hisao / Kanehori, Keiichi / Mitsui, Yasuhiro et al. | 1996
- 2712
-
Quantification of metal trace contaminants on Si wafer surfaces by Laser‐SNMS and TOF‐SIMS using sputter deposited submonolayer standardsSchnieders, A. / Möllers, R. / Terhorst, M. / Cramer, H.‐G. / Niehuis, E. / Benninghoven, A. et al. | 1996
- 2725
-
Phonon scattering in novel superlattice‐asymmetric double barrier resonant tunneling structureBanoo, K. / Daniels‐Race, T. / Wallis, C. R. / Teitsworth, S. W. et al. | 1996
- 2731
-
Facet generation during molecular beam epitaxy of GaAs/AlGaAs multilayers on GaAs (001) patterned substratesTakebe, T. / Fujii, M. / Yamamoto, T. / Fujita, K. / Watanabe, T. et al. | 1996
- 2739
-
InP/InGaAs single heterojunction bipolar transistors grown by solid‐source molecular beam epitaxy using a phosphorus valved crackerChen, W. L. / Chin, T. P. / Woodall, J. M. / Haddad, G. I. et al. | 1996
- 2742
-
Chemistry of arsenic incorporation during GaAs/GaAs(100) molecular beam epitaxy probed by simultaneous laser flux monitoring and reflection high‐energy electron diffractionOtt, Adina K. / Casey, Sean M. / Alstrin, April L. / Leone, Stephen R. et al. | 1996
- 2753
-
Solid source molecular beam epitaxy of low threshold 1.55 μm wavelength GaInAs/GaInAsP/InP semiconductor lasersJohnson, F. G. / King, O. / Seiferth, F. / Stone, D. R. / Whaley, R. D. / Dagenais, M. / Chen, Y. J. et al. | 1996
- 2757
-
Molecular beam epitaxy grown ZnSe studied by reflectance anisotropy spectroscopy and reflection high‐energy electron diffractionZettler, J. ‐T. / Stahrenberg, K. / Richter, W. / Wenisch, H. / Jobst, B. / Hommel, D. et al. | 1996
- 2761
-
Solvent effect on the properties of sulfur passivated GaAsBessolov, Vasily N. / Konenkova, Elena V. / Lebedev, Mikhail V. et al. | 1996
- 2767
-
Silicon dioxide chemical vapor deposition using silane and hydrogen peroxideGaillard, Frédéric / Brault, Pascal / Brouquet, Pierre et al. | 1996
- 2770
-
Analytical method of gigabit trench doping uniformity by secondary ion mass spectrometryMatsuo, Naoto / Tsukamoto, Kazuyoshi / Miyoshi, Tadaki et al. | 1996
- 2772
-
Erratum: Measurement of interfacial shear (friction) with an ultrahigh vacuum atomic force microscope [J. Vac. Sci. Technol. B 14, 1289 (1996)]Carpick, R. W. / Agraït, N. / Ogletree, D. F. / Salmeron, M. et al. | 1996
- 2776
-
Effect of dislocations in strained Si/SiGe on electron mobilityIsmail, K. et al. | 1996
- 2780
-
Quantum transport: Silicon inversion layers and InAlAs–InGaAs heterostructuresVasileska, D. / Eldridge, T. / Ferry, D. K. et al. | 1996
- 2786
-
Ballistic electron emission microscopy of Au–InAs–GaAs systemKe, Mao‐long / Westwood, D. I. / Matthai, C. C. / Richardson, B. E. / Williams, R. H. et al. | 1996
- 2790
-
Interface roughness effects on transport in tunnel structuresTing, D. Z.‐Y. / McGill, T. C. et al. | 1996
- 2794
-
Electron transport at Au/InP interface with nanoscopic exclusionsAnand, S. / Carlsson, S‐B. / Deppert, K. / Montelius, L. / Samuelson, L. et al. | 1996
- 2799
-
Relaxation of the step profile for different microscopic mechanismsLiu, Da‐Jiang / Fu, Elain S. / Johnson, M. D. / Weeks, John D. / Williams, Ellen D. et al. | 1996
- 2809
-
First‐principles study of Si 2p core‐level shifts at water and hydrogen covered Si(001)2×1 surfacesPasquarello, Alfredo / Hybertsen, Mark S. / Car, Roberto et al. | 1996
- 2812
-
New approach to preparing smooth Si(100) surfaces: Characterization by spectroellipsometry and validation of Si/SiO2 interfaces properties in metal‐oxide‐semiconductor devicesSchmidt, D. / Niimi, H. / Hinds, B. J. / Aspnes, D. E. / Lucovsky, G. et al. | 1996
- 2817
-
Schwoebel barriers on Si(111) steps and kinksKodiyalam, S. / Khor, K. E. / Das Sarma, S. et al. | 1996
- 2824
-
An inquiry concerning the principles of Si 2p core‐level photoemission shift assignments at the Si/SiO2 interfaceMcFeely, F. R. / Zhang, K. Z. / Banaszak Holl, Mark M. / Lee, Sunghee / Bender, John E. et al. | 1996
- 2832
-
Defect properties of Si‐, O‐, N‐, and H‐atoms at Si—SiO2 interfacesLucovsky, G. / Jing, Z. / Lee, D. R. et al. | 1996
- 2840
-
Oxidation of silicon (100): Experimental data versus a unified chemical modelThanikasalam, P. / Whidden, T. K. / Ferry, D. K. et al. | 1996
- 2845
-
Kinetics of field‐induced oxidation of hydrogen‐terminated Si(111)Ley, L. / Teuschler, T. / Mahr, K. / Miyazaki, S. / Hundhausen, M. et al. | 1996
- 2850
-
Photoinduced surface reactions of reverse‐biased n‐type porous SiLee, Eric J. / Bitner, Theodore W. / Hall, Anselm P. / Sailor, Michael J. et al. | 1996
- 2855
-
Stressing and high field transport studies on device‐grade SiO2 by ballistic electron emission spectroscopyLudeke, R. / Wen, H. J. / Cartier, E. et al. | 1996
- 2864
-
Ballistic‐electron emission microscopy studies of charge trapping in SiO2Kaczer, B. / Pelz, J. P. et al. | 1996
- 2872
-
Contactless capacitance–voltage and photoluminescence characterization of ultrathin oxide–silicon interfaces formed on hydrogen terminated (111) surfacesHashizume, Tamotsu / Koyanagi, Satoshi / Hasegawa, Hideki et al. | 1996
- 2882
-
Rapid thermal N2O oxynitride on Si(100)Lu, Z. H. / Hussey, R. J. / Graham, M. J. / Cao, R. / Tay, S. P. et al. | 1996
- 2888
-
Surface passivation of In0.53Ga0.47As ridge quantum wires using silicon interface control layersFujikura, Hajime / Kodama, Satoshi / Hashizume, Tamotsu / Hasegawa, Hideki et al. | 1996
- 2895
-
Structure of the SiNx/GaAs (110) interface modified with ultrathin Si and sulfur passivationHuang, L. J. / Lau, W. M. / Tang, H. T. / Lennard, W. N. / Mitchell, I. V. / Landheer, D. / Baribeau, J.‐M. / Ingrey, S. et al. | 1996
- 2901
-
Structural and electronic properties of Sb islands on GaAs (110)Magri, R. / Manghi, F. / Calandra, C. et al. | 1996
- 2909
-
Room‐temperature chlorination of As‐rich GaAs (110)Simpson, William C. / Shuh, David K. / Yarmoff, Jory A. et al. | 1996
- 2914
-
Interaction of hydrogen ions with oxidized GaAs(100) and AlAs(100) surfacesChang, Ying‐Lan / Cao, R. / Spicer, W. E. / Pianetta, P. / Shi, Song / Hu, Evelyn / Merz, James et al. | 1996
- 2918
-
Study on interface abruptness of InxGa1−xAs/InyGa1−yAszP1−z heterostructures grown by gas‐source molecular beam epitaxyBi, W. G. / Tu, C. W. et al. | 1996
- 2922
-
Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/AlxGa1−xAs quantum wellsRich, D. H. / Rammohan, K. / Lin, H. T. / Tang, Y. / Meshkinpour, M. / Goorsky, M. S. et al. | 1996
- 2936
-
Role of structural and chemical contributions to valence‐band offsets at strained‐layer heterojunctions: The GaAs/GaP (001) caseDi Ventra, M. / Peressi, M. / Baldereschi, A. et al. | 1996
- 2940
-
Atomic‐scale structure of InAs/InAs1−xSbx superlattices grown by modulated molecular beam epitaxyLew, A. Y. / Yu, E. T. / Zhang, Y. H. et al. | 1996
- 2944
-
Evidence for the occupation of DX centers in In0.29Al0.71AsYoung, A. P. / Wieder, H. H. et al. | 1996
- 2948
-
Microscopic processes during electron cyclotron resonance microwave nitrogen plasma‐assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modelingBandić, Z. Z. / McGill, T. C. / Hauenstein, R. J. / O’Steen, M. L. et al. | 1996
- 2952
-
Tensile strain relaxation in GaNxP1−x (x≤0.1) grown by chemical beam epitaxyLi, N. Y. / Wong, W. S. / Tomich, D. H. / Kavanagh, K. L. / Tu, C. W. et al. | 1996
- 2957
-
Nickel doping of boron carbide grown by plasma enhanced chemical vapor depositionHwang, Seong‐Don / Remmes, N. B. / Dowben, P. A. / McIlroy, D. N. et al. | 1996
- 2961
-
Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfacesYang, X. / Brillson, L. J. / Raisanen, A. D. / Vanzetti, L. / Bonanni, A. / Franciosi, A. / Grundmann, M. / Bimberg, D. et al. | 1996
- 2967
-
Interfacial chemical bonds, reactions, and band alignment in ZnSe/GaAs(001) heterojunctionsBratina, G. / Ozzello, T. / Franciosi, A. et al. | 1996
- 2973
-
Interface states of ZnSe/GaAs interfaceYang, Z. / Sou, I. K. / Yeung, Y. H. / Wong, G. K. L. / Wang, Jie / Jin, Cai‐xia / Hou, Xiao‐yuan et al. | 1996
- 2980
-
Zn preadsorption on GaAs(100)2×4 prior to ZnSe growthHeun, S. / Paggel, J. J. / Rubini, S. / Franciosi, A. et al. | 1996
- 2985
-
Electronic properties of ideal and interface‐modified metal‐semiconductor interfacesMönch, Winfried et al. | 1996
- 2994
-
Tunable Schottky barriers and the nature of Si interface layers in Al/GaAs(001) diodesSorba, L. / Paggel, J. J. / Franciosi, A. et al. | 1996
- 3000
-
Schottky barrier tuning at Al/GaAs(100) junctionsBerthod, C. / Bardi, J. / Binggeli, N. / Baldereschi, A. et al. | 1996
- 3008
-
Near‐surface dopant passivation after wet‐chemical preparationLey, L. / Ristein, J. / Schäfer, J. / Miyazaki, S. et al. | 1996
- 3013
-
Correlation between surface structure and ordering in GaInPMurata, H. / Lee, S. H. / Ho, I. H. / Stringfellow, G. B. et al. | 1996
- 3019
-
Heteroepitaxy of GaP on Si(100)Bachmann, K. J. / Rossow, U. / Sukidi, N. / Castleberry, H. / Dietz, N. et al. | 1996
- 3030
-
Characterization of Si/Si1−yCy superlattices grown by surfactant assisted molecular beam epitaxyPettersson, P. O. / Ahn, C. C. / McGill, T. C. / Croke, E. T. / Hunter, A. T. et al. | 1996
- 3035
-
Modulation‐doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step‐graded InxGa1−xAs buffersGoldman, R. S. / Kavanagh, K. L. / Wieder, H. H. / Ehrlich, S. N. et al. | 1996
- 3040
-
Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy conditionsRossow, U. / Dietz, N. / Bachmann, K. J. / Aspnes, D. E. et al. | 1996
- 3047
-
Implications of excess strain in As compound/P compound III–V multilayer superlattices grown by metal‐organic vapor‐phase epitaxyClawson, A. R. / Hanson, C. M. et al. | 1996
- 3052
-
In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopyYasuda, T. / Kuo, L. H. / Kimura, K. / Miwa, S. / Jin, C. G. / Tanaka, K. / Yao, T. et al. | 1996
- 3058
-
Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopySteimetz, E. / Zettler, J.‐T. / Richter, W. / Westwood, D. I. / Woolf, D. A. / Sobiesierski, Z. et al. | 1996
- 3065
-
Reflectance anisotropy spectroscopy study of GaAs overlayer growthSobiesierski, Z. / Westwood, D. I. / Woolf, D. A. et al. | 1996
- 3070
-
Interpretation of surface‐induced optical anisotropy of clean, hydrogenated, and oxidized vicinal silicon surfaces investigated by reflectance‐difference spectroscopyRossow, U. / Mantese, L. / Aspnes, D. E. et al. | 1996
- 3075
-
Ab initio calculations of the reflectance anisotropy spectrumBass, J. M. / Matthai, C. C. et al. | 1996
- 3080
-
Anisotropic optical reflection by stepped surfacesde Boeij, P. L. / Wijers, C. M. J. / Zoethout, E. et al. | 1996
- 3089
-
Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction systemLeibovitch, M. / Ram, P. / Malikova, L. / Pollak, Fred H. / Freeouf, J. L. / Kronik, L. / Mishori, B. / Shapira, Yoram / Clawson, A. R. / Hanson, C. M. et al. | 1996
- 3095
-
Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopyWeldon, M. K. / Chabal, Y. J. / Hamann, D. R. / Christman, S. B. / Chaban, E. E. / Feldman, L. C. et al. | 1996
- 3107
-
Nonlinear optical spectroscopy of Si–heterostructure interfacesMeyer, C. / Lüpke, G. / Lü, Z. G. / Gölz, A. / Kurz, H. / Lucovsky, G. et al. | 1996
- 3113
-
Spatial mapping of ordered and disordered domains of GaInP by near‐field scanning optical microscopy and scanning capacitance microscopyLeong, J‐K. / McMurray, J. / Williams, C. C. / Stringfellow, G. B. et al. | 1996
- 3119
-
X‐ray magnetic microscopy and spectroscopy using a third generation synchrotron radiation sourceYoung, A. T. / Padmore, H. A. / Smith, N. V. et al. | 1996
- 3126
-
Imaging of ferromagnetic domains using photoelectrons: Photoelectron emission microscopy of neodymium‐iron‐boron (Nd2Fe14B)Mundschau, M. / Romanowicz, J. / Wang, J. Y. / Sun, D. L. / Chen, H. C. et al. | 1996
- 3131
-
Effect of silicon processing on giant magnetoresistanceBurkett, S. L. / Yang, J. / Pillai, D. / Parker, M. R. et al. | 1996
- 3136
-
Electronic magnetic and structural coupling in colossal magnetoresistive (La,Ca)MnO3Pickett, Warren E. / Singh, David J. et al. | 1996
- 3140
-
Spin‐resolved x‐ray photoemission studies of ferromagnetic metalsKlebanoff, L. E. et al. | 1996
- 3148
-
Magnetic circular dichroism in reflection electron energy loss spectroscopy?Harp, G. R. / Farrow, R. F. C. / Marks, R. F. et al. | 1996
- 3152
-
Probing surface and thin film magnetic structure with circularly polarized synchrotron radiationWaddill, G. D. / Tobin, J. G. / Guo, X. / Tong, S. Y. et al. | 1996
- 3160
-
Theoretical investigation of structural instabilities of Fe layers on face‐centered‐cubic CuNordström, Lars / Singh, David J. et al. | 1996
- 3164
-
Investigation of face‐centered‐cubic Fe thin films using wedged samplesKawakami, R. K. / Escorcia‐Aparicio, Ernesto J. / Qiu, Z. Q. et al. | 1996
- 3171
-
Magnetic x‐ray dichroism in the spectroscopy of ultrathin magnetic alloy filmsTobin, J. G. / Goodman, K. W. / Mankey, G. J. / Willis, R. F. / Denlinger, J. D. / Rotenberg, E. / Warwick, A. et al. | 1996
- 3176
-
Wavelength dependence of the magneto‐optical properties of the interfaces of a Au sandwiched (001) Fe filmGeerts, Wim / Katayama, T. / Suzuki, Y. / Childress, J. et al. | 1996
- 3180
-
Correlation between dynamic magnetic hysteresis loops and nanoscale roughness of ultrathin Co filmsJiang, Q. / Yang, H.‐N. / Wang, G.‐C. et al. | 1996
- 3189
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Magnetic behavior of FexNi(1−x) and CoxNi(1−x) pseudomorphic filmsWu, S. Z. / Schumann, F. O. / Mankey, G. J. / Willis, R. F. et al. | 1996
- 3193
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Epitaxial growth, structure, and composition of Fe films on GaAs(001)‐2×4Kneedler, E. / Thibado, P. M. / Jonker, B. T. / Bennett, B. R. / Shanabrook, B. V. / Wagner, R. J. / Whitman, L. J. et al. | 1996
- 3199
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Mn 3s multiplet splitting of pseudomorphic Mn overlayers on Ru(001)Sham, T. K. / Shek, M. L. / Hrbek, J. / Campen, D. G. Van et al. | 1996
- 3203
-
Temperature dependent magnetic surface anisotropy in ultrathin Fe filmsPappas, D. P. et al. | 1996
- 3207
-
Distinguishing the close‐packed hexagonal and face centered cubic phases of the metallization of diamond by polarization‐dependent extended x‐ray absorption fine structureKemner, K. M. / Elam, W. T. / Harris, V. G. / Idzerda, Y. U. / Wolf, J. A. et al. | 1996