Doping effects in off‐stoichiometric glow discharge amorphous silicon nitride (English)
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- New search for: Alvarez, F.
- New search for: Chambouleyron, I.
- New search for: Constantino, C.
- New search for: Cisneros, J. I.
- New search for: Alvarez, F.
- New search for: Chambouleyron, I.
- New search for: Constantino, C.
- New search for: Cisneros, J. I.
In:
Applied Physics Letters
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44
, 1
;
116-118
;
1984
- Article (Journal) / Electronic Resource
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Title:Doping effects in off‐stoichiometric glow discharge amorphous silicon nitride
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Contributors:Alvarez, F. ( author ) / Chambouleyron, I. ( author ) / Constantino, C. ( author ) / Cisneros, J. I. ( author )
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Published in:Applied Physics Letters ; 44, 1 ; 116-118
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Publisher:
- New search for: American Institute of Physics
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Publication date:1984-01-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 44, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Improved AlxGa1−xAs bulk lasers with superlattice interfacesFischer, R. / Klem, J. / Drummond, T. J. / Kopp, W. / Morkoc¸, H. / Anderson, E. / Pion, M. et al. | 1984
- 3
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Optical heating of electron‐hole plasma in silicon by picosecond pulsesLompre´, L.‐A. / Liu, J.‐M. / Kurz, H. / Bloembergen, N. et al. | 1984
- 5
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Single mode operation of a current pulsed GaAlAs laser with dispersive external feedbackAndrews, John R. et al. | 1984
- 7
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Procedure for electron and ion lens optimizationSzilagyi, M. / Yakowitz, S. J. / Duff, M. O. et al. | 1984
- 10
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Phase noise characteristics of single mode semiconductor lasers with optical feedbackChen, Y. C. et al. | 1984
- 13
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Longitudinal mode behavior and tunability of separately pumped (GaAl)As lasersFang, Zu‐Jie / Wang, Shyh et al. | 1984
- 16
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High‐speed optical modulation with GaAs/GaAlAs quantum wells in a p‐i‐n diode structureWood, T. H. / Burrus, C. A. / Miller, D. A. B. / Chemla, D. S. / Damen, T. C. / Gossard, A. C. / Wiegmann, W. et al. | 1984
- 19
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Silicon photodetector integrated on a lithium tantalate substrateReedy, R. E. / Lee, S. H. et al. | 1984
- 22
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Submicron, vacuum ultraviolet contact lithography with an F2 excimer laserWhite, J. C. / Craighead, H. G. / Howard, R. E. / Jackel, L. D. / Behringer, R. E. / Epworth, R. W. / Henderson, D. / Sweeney, J. E. et al. | 1984
- 25
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Urea optical parametric oscillatorDonaldson, William R. / Tang, C. L. et al. | 1984
- 28
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Time‐resolved acoustic pulses generated by 4‐MeV protons stopping in aluminumSieger, G. E. / Lefevre, H. W. et al. | 1984
- 30
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Bistability in coupled cavity semiconductor lasersDutta, N. K. / Agrawal, G. P. / Focht, M. W. et al. | 1984
- 33
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Hysteresis in a low‐pressure argon dischargeMerlino, Robert L. / Cartier, Steven L. et al. | 1984
- 35
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Pulsed laser melting of amorphous silicon layersNarayan, J. / White, C. W. et al. | 1984
- 38
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High‐performance, focusing‐type, time‐of‐flight atom probe with a channeltron as a signal detectorSakurai, Toshio / Hashizume, T. / Jimbo, A. et al. | 1984
- 40
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Surface segregation and diffusion kinetics study of a Pt‐Ir alloy using the time‐of‐flight atom‐probe field ion microscopeAhmad, M. / Tsong, T. T. et al. | 1984
- 42
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New electron trap in p‐type Czochralski siliconMao, B.‐Y. / Lagowski, J. / Gatos, H. C. et al. | 1984
- 45
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Ion mixing of markers in SiO2 and SiBarcz, A. J. / Paine, B. M. / Nicolet, M‐A. et al. | 1984
- 48
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Structural evolution of very thin silicon oxide films during thermal growth in dry oxygenAgius, B. / Rigo, S. / Rochet, F. / Froment, M. / Maillot, C. / Roulet, H. / Dufour, G. et al. | 1984
- 51
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Observation of Si2 in a chemical vapor deposition reactor by laser excited fluorescenceHo, Pauline / Breiland, William G. et al. | 1984
- 53
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Scaling relations in the equation of state, thermal expansion, and melting of metalsGuinea, Francisco / Rose, James H. / Smith, John R. / Ferrante, John et al. | 1984
- 56
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Blocking of threading dislocations by Hg1−xCdxTe expitaxial layersJames, T. W. / Stoller, R. E. et al. | 1984
- 59
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Photothermal spectroscopy using a pyroelectric thin‐film detectorCoufal, H. et al. | 1984
- 62
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Hydrogen content of thermally nitrided thin silicon dioxide filmsHabraken, F. H. P. M. / Evers, E. J. / Kuiper, A. E. T. et al. | 1984
- 65
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Poling behavior of polyvinylidene fluoride at room temperatureMopsik, F. I. / DeReggi, A. S. et al. | 1984
- 68
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Interfacial electromigration of aluminum in thin‐film polysilicon/silicide structuresLloyd, J. R. / Sullivan, M. J. / Jozwiak, J. L. / Murphy, R. J. et al. | 1984
- 71
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Compensation effects in Si‐doped GaAs grown by molecular beam epitaxyNottenburg, R. / Bu¨hlmann, H. J. / Frei, M. / Ilegems, M. et al. | 1984
- 74
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Carbon in semi‐insulating, liquid encapsulated Czochralski GaAsHunter, A. T. / Kimura, H. / Baukus, J. P. / Winston, H. V. / Marsh, O. J. et al. | 1984
- 77
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Periodically structured amorphous silicon detectors with improved picosecond responsivityGlass, A. M. / Liao, P. F. / Johnson, A. M. / Humphrey, L. M. / Lemons, R. / Olson, D. H. / Stern, M. B. et al. | 1984
- 80
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Reduction of interface states in Pt‐GaAs buried Schottky barrierOnuma, Takeshi / Uenoyama, Takeshi / Yagita, Hideki et al. | 1984
- 82
-
Variation of intervalence band absorption with hole concentration in p‐type InPCasey, H. C. / Carter, P. L. et al. | 1984
- 84
-
Localization induced electron‐hole transition rate enhancement in GaAs quantum wellsChristen, J. / Bimberg, D. / Steckenborn, A. / Weimann, G. et al. | 1984
- 87
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Time‐resolved measurement of hole sweepout in a GaAs photoconductorVon Lehmen, A. / Ballantyne, J. M. et al. | 1984
- 90
-
Resonant Fowler–Nordheim tunneling in n−GaAs‐undoped AlxGa1−xAs‐n+GaAs capacitorsHickmott, T. W. / Solomon, P. M. / Fischer, R. / Morkoc¸, H. et al. | 1984
- 93
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Probing the transition layer at the SiO2‐Si interface using core level photoemissionHollinger, G. / Himpsel, F. J. et al. | 1984
- 96
-
Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structuresLenahan, P. M. / Dressendorfer, P. V. et al. | 1984
- 99
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Interdigitated Al0.48In0.52As/Ga0.47In0.53As photoconductive detectorsChen, C. Y. / Pang, Y. M. / Alavi, K. / Cho, A. Y. / Garbinski, P. A. et al. | 1984
- 102
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Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyBean, J. C. / Sheng, T. T. / Feldman, L. C. / Fiory, A. T. / Lynch, R. T. et al. | 1984
- 105
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Graded collector heterojunction bipolar transistorChiu, L. C. / Harder, Ch. / Margalit, S. / Yariv, A. et al. | 1984
- 107
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Transient enhanced diffusion in arsenic‐implanted short time annealed siliconKalish, R. / Sedgwick, T. O. / Mader, S. / Shatas, S. et al. | 1984
- 110
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Reduction of silicon‐aluminum interdiffusion by improved semiconductor surface orderingBrillson, L. J. / Slade, M. L. / Katnani, A. D. / Kelly, M. / Margaritondo, G. et al. | 1984
- 113
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Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interfaceKendelewicz, T. / Petro, W. G. / Pan, S. H. / Williams, M. D. / Lindau, I. / Spicer, W. E. et al. | 1984
- 116
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Doping effects in off‐stoichiometric glow discharge amorphous silicon nitrideAlvarez, F. / Chambouleyron, I. / Constantino, C. / Cisneros, J. I. et al. | 1984
- 119
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Formation of optically induced catastrophic degradation lines in InGaAsP epilayersMahajan, S. / Temkin, H. / Logan, R. A. et al. | 1984
- 122
-
Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretationTiong, K. K. / Amirtharaj, P. M. / Pollak, F. H. / Aspnes, D. E. et al. | 1984
- 125
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Effect of temperature gradients on the first‐order Raman spectrum of SiRaptis, J. / Liarokapis, E. / Anastassakis, E. et al. | 1984
- 128
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Infrared photodetection in proton‐bombarded InPMiyoshi, T. / Tien, P. K. / Martin, R. J. / Tennant, D. M. / Johnson, A. M. / Downey, P. M. et al. | 1984
- 131
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Effects of a voltage‐dependent light‐generated current on solar cell measurements: CuInSe2/Cd(Zn)SEron, M. / Rothwarf, A. et al. | 1984
- 134
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Meyer–Neldel rule in solar cellsCoutts, T. J. / Pearsall, N. M. et al. | 1984
- 136
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Stimulated emission of GaAs‐Al0.6Ga0.4As multiple quantum well structures grown by metalorganic chemical vapor depositionXu, Z. Y. / Kreismanis, V. G. / Tang, C. L. et al. | 1984
- 139
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Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)AsSto¨rmer, H. L. / Gossard, A. C. / Wiegmann, W. / Blondel, R. / Baldwin, K. et al. | 1984
- 142
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Iodine ion milling of indium‐containing compound semiconductorsChew, N. G. / Cullis, A. G. et al. | 1984
- 145
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Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InP p‐n junction structuresYeats, R. / Von Dessonneck, K. et al. | 1984
- 148
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High‐energy product Nd‐Fe‐B permanent magnetsCroat, J. J. / Herbst, J. F. / Lee, R. W. / Pinkerton, F. E. et al. | 1984
- 150
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Comment on ‘‘Lattice location of chromium in semi‐insulating GaAs by ion channeling techniques’’ [Appl. Phys. Lett. 42, 599 (1983)]Pronko, P. P. / Bhattacharya, R. S. / Holland, O. W. / Appleton, B. R. et al. | 1984