Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix (English)
- New search for: Yoshikawa, A.
- New search for: Che, S. B.
- New search for: Hashimoto, N.
- New search for: Saito, H.
- New search for: Ishitani, Y.
- New search for: Wang, X. Q.
- New search for: Yoshikawa, A.
- New search for: Che, S. B.
- New search for: Hashimoto, N.
- New search for: Saito, H.
- New search for: Ishitani, Y.
- New search for: Wang, X. Q.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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26
, 4
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1551-1559
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2008
- Article (Journal) / Electronic Resource
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Title:Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
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Additional title:Fabrication and characterization of novel monolayer InN
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Contributors:Yoshikawa, A. ( author ) / Che, S. B. ( author ) / Hashimoto, N. ( author ) / Saito, H. ( author ) / Ishitani, Y. ( author ) / Wang, X. Q. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:2008-07-01
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Size:9 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 26, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1197
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Gas-assisted focused electron beam and ion beam processing and fabricationUtke, Ivo / Hoffmann, Patrik / Melngailis, John et al. | 2008
- 1277
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Structural and electrical properties of thin films deposited on substrates by rf-magnetron sputteringAhn, Jun-Ku / Cuong, Nguyen Duy / Yoon, Soon-Gil / Kim, Chang-Soo et al. | 2008
- 1281
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Surface roughness generated by plasma etching processes of siliconMartin, M. / Cunge, G. et al. | 2008
- 1289
-
System-level line-edge roughness limits in extreme ultraviolet lithographyNaulleau, Patrick P. / Niakoula, Dimitra / Zhang, Guojing et al. | 2008
- 1294
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Highly reliable growth process of carbon nanowalls using radical injection plasma-enhanced chemical vapor depositionKondo, Shingo / Hori, Masaru / Yamakawa, Koji / Den, Shoji / Kano, Hiroyuki / Hiramatsu, Mineo et al. | 2008
- 1301
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Metal-containing release layers for use with UV-cure nanoimprint lithographic template materialsHoule, F. A. / Raoux, S. / Miller, D. C. / Jahnes, C. / Rossnagel, S. et al. | 2008
- 1305
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Stable field emission from screen-printed ZnO-tetrapod emittersHou, Kai / Li, Chi / Lei, Wei / Zhang, Xiaobing / Qu, Ke / Yang, Xiaxi / Zhao, Zhiwei / Wang, Baoping et al. | 2008
- 1309
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Conformal filling of silicon micropillar platform withDeo, N. / Brewer, J. R. / Reinhardt, C. E. / Nikolić, R. J. / Cheung, C. L. et al. | 2008
- 1315
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Synthesis and characterization of nanocompositesGoyal, Amita / Rumaiz, Abdul K. / Miao, Y. / Hazra, Sukti / Ni, C. / Shah, S. Ismat et al. | 2008
- 1321
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Preparation and field emission property of nanodiamond-cluster-embedded diamondlike carbon filmXie, W. G. / Chen, Jian / Ming, W. W. / Chen, Jun / Zhou, J. / Deng, S. Z. / Xu, N. S. et al. | 2008
- 1326
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Smooth sidewall in InP-based photonic crystal membrane etched by -based inductively coupled plasmaLee, K. H. / Guilet, S. / Patriarche, G. / Sagnes, I. / Talneau, A. et al. | 2008
- 1334
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Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applicationsHur, Sung-Gi / Kim, Eui-Tae / Lee, Ji-Hong / Kim, Geun-Hong / Yoon, Soon-Gil et al. | 2008
- 1338
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Interfacial and electrical properties of films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high- gate dielectricSahu, B. S. / Pammi, S. V. N. / Seong, Nak-Jin / Yoon, Soon-Gil et al. | 2008
- 1344
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Metal nanoparticle embedded porous thin films prepared by oblique angle coevaporationBlackwell, R. / Zhao, Y.-P. et al. | 2008
- 1350
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Optical and photocatalytic properties of oblique angle deposited nanorod arrayHe, Y. P. / Zhang, Z. Y. / Zhao, Y. P. et al. | 2008
- 1359
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bilayer Ohmic contact onOhyanagi, Takasumi / Onose, Yasuo / Watanabe, Atsuo et al. | 2008
- 1363
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A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package applicationKim, Jongseok / Kwon, Sangwook / Hong, Youngteak / Song, Insang / Ju, Byeongkwon et al. | 2008
- 1368
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Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation densityEwing, D. J. / Derenge, M. A. / Shah, P. B. / Lee, U. / Zheleva, T. S. / Jones, K. A. et al. | 2008
- 1373
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Etching rate, optical transmittance, and charge trapping characteristics of Al-rich thin film fabricated by rf magnetron cosputteringNakata, Shunji / Nagai, Shingo / Kumeda, Minoru / Kawae, Takeshi / Morimoto, Akiharu / Shimizu, Tatsuo et al. | 2008
- 1379
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Flexible organic light-emitting diodes with improved performance by insertion of an UV-sensitive layerHui, Lin / Junsheng, Yu / Nana, Wang / Chunhua, Huang / Yadong, Jiang et al. | 2008
- 1382
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Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammoniaD’Emic, C. / Newbury, J. / Scerbo, C. / Copel, M. / Gordon, M. et al. | 2008
- 1390
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Direct UV-imprint lithography using conductive nanofiller-dispersed UV-curable resinChoi, Jun-Hyuk / Lee, Soon-Won / Choi, Dae-Geun / Kim, Ki-Don / Jeong, Jun-Ho / Lee, Eung-Suk et al. | 2008
- 1395
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X-ray photoelectron spectroscopy and low-energy electron diffraction analyses on the extremely low work-function surface of W(100) modified by yttrium oxideKawakubo, Takashi / Shimoyama, Yusuke / Nakane, Hideaki / Adachi, Hiroshi et al. | 2008
- 1398
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Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositionsTong, X. L. / Jiang, D. S. / Liu, L. / Dai, H. et al. | 2008
- 1404
-
Spherical field emission cathode based on carbon nanotube paste and its application in luminescent bulbsFu, Weiqi / Liu, Peng / Tang, Jie / Liu, Liang / Fan, Shoushan et al. | 2008
- 1407
-
A study of patterning and annealing effects on the performance of magnetic planar inductorSun, Hongfang / Liu, Zewen / Zhao, Jiahao / Wang, Li / Zhu, Jing et al. | 2008
- 1412
-
High sensitivity cantilevers for measuring persistent currents in normal metal ringsBleszynski-Jayich, A. C. / Shanks, W. E. / Ilic, B. R. / Harris, J. G. E. et al. | 2008
- 1417
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Effect of contact metals on the piezoelectric properties of aluminum nitride thin filmsHarman, J. / Kabulski, A. / Pagán, V. R. / Famouri, P. / Kasarla, K. R. / Rodak, L. E. / Peter Hensel, J. / Korakakis, D. et al. | 2008
- 1420
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Electrical characteristics of Schottky contacts to plasma-etched AlGaNSyed, A. A. / Cao, X. A. / Woodworth, A. A. / Stinespring, C. D. et al. | 2008
- 1425
-
Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profilesOsano, Yugo / Ono, Kouichi et al. | 2008
- 1440
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Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devicesBliznetsov, V. / Singh, N. / Kumar, R. / Balasubramanian, N. / Guo, P. / Lee, S. J. / Cai, Y. et al. | 2008
- 1445
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Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectricsAguilera, L. / Polspoel, W. / Volodin, A. / Van Haesendonck, C. / Porti, M. / Vandervorst, W. / Nafria, M. / Aymerich, X. et al. | 2008
- 1450
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Erratum: “Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition” [J. Vac. Sci. Technol. B 26, L1 (2008)]Kim, Jung Hyeun et al. | 2008
- 1454
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Interfacial effects in thin films of polymeric semiconductorsRivnay, Jonathan / Jimison, Leslie H. / Toney, Michael F. / Preiner, Michael / Melosh, Nicholas A. / Salleo, Alberto et al. | 2008
- 1461
-
Single molecule measurements with photoelectron emission microscopyKong, Xianhua / Rowe, J. E. / Nemanich, R. J. et al. | 2008
- 1466
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Depth-resolved cathodoluminescence spectroscopy study of defects inZhang, Jun / Walsh, S. / Brooks, C. / Schlom, D. G. / Brillson, L. J. et al. | 2008
- 1472
-
Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistorsMoon, Yeon-Keon / Moon, Dae-Yong / Lee, Sih / Lee, Sang-Ho / Park, Jong-Wan / Jeong, Chang-Oh et al. | 2008
- 1477
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Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfacesDoutt, D. R. / Zgrabik, C. / Mosbacker, H. L. / Brillson, L. J. et al. | 2008
- 1483
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Theory of electron tunneling through a scanning tunneling microscopy-tip/quantum dot junctionKuo, David M.-T. / Chang, Yia-Chung et al. | 2008
- 1488
-
Imaging classical and quantum structures in an open quantum dot using scanning gate microscopyBurke, A. M. / Aoki, N. / Akis, R. / Ochiai, Y. / Ferry, D. K. et al. | 2008
- 1492
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Quantum ring formation and antimony segregation in nanostructuresTimm, R. / Lenz, A. / Eisele, H. / Ivanova, L. / Dähne, M. / Balakrishnan, G. / Huffaker, D. L. / Farrer, I. / Ritchie, D. A. et al. | 2008
- 1504
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Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptionsVanMil, B. L. / Stahlbush, R. E. / Myers-Ward, R. L. / Lew, K.-K. / Eddy, C. R. / Gaskill, D. K. et al. | 2008
- 1508
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Interaction of microwaves with photoelectrons in semiconductorsAhrenkiel, R. K. / Johnston, S. W. et al. | 2008
- 1516
-
As-rich phases investigated by in situ surface x-ray diffractionTinkham, B. P. / Braun, W. / Ploog, K. H. / Takahasi, M. / Mizuki, J. / Grosse, F. et al. | 2008
- 1521
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Interface structure and transport of complex oxide junctionsNelson-Cheeseman, B. B. / Wong, F. / Chopdekar, R. V. / Chi, M. / Arenholz, E. / Browning, N. D. / Suzuki, Y. et al. | 2008
- 1526
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Magnetocapacitance effect in heterojunctionsRangaraju, N. / Wessels, B. W. et al. | 2008
- 1530
-
Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)Moreno, M. / Kumar, A. / Tallarida, M. / Ney, A. / Ploog, K. H. / Horn, K. et al. | 2008
- 1534
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Surface bonding effects in compound semiconductor nanoparticles: IIFarrell, H. H. et al. | 2008
- 1542
-
Steady state and transient behavior of currents in planar Schottky diodes and mechanism of current collapseHasegawa, Hideki / Akazawa, Masamichi et al. | 2008
- 1551
-
Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrixYoshikawa, A. / Che, S. B. / Hashimoto, N. / Saito, H. / Ishitani, Y. / Wang, X. Q. et al. | 2008
- 1560
-
Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrateLiang, D. / Bowers, J. E. et al. | 2008
- 1569
-
Admittance study of GaAs high- metal-insulator-semiconductor capacitors with Si interface control layerAkazawa, Masamichi / Hasegawa, Hideki et al. | 2008
- 1579
-
Atomic scale dielectric constant near the interfaceWakui, Sadakazu / Nakamura, Jun / Natori, Akiko et al. | 2008
- 1585
-
Optimum ambient pressure during HfAlO pulsed-laser deposition in field effect transistorsTakahashi, M. / Horiuchi, T. / Wang, S. / Li, Q.-H. / Sakai, S. et al. | 2008
- 1588
-
Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer depositionKim, Woong-Sun / Kim, Tae-Sub / Kang, Byung-Woo / Ko, Myoung-Gyun / Park, Sang-Kyun / Park, Jong-Wan et al. | 2008
- 1592
-
Nickel and nickel silicide Schottky barrier contacts to -type silicon nanowiresWoodruff, S. M. / Dellas, N. S. / Liu, B. Z. / Eichfeld, S. M. / Mayer, T. S. / Redwing, J. M. / Mohney, S. E. et al. | 2008
- 1597
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and molecular contacts to GaAsAhktari-Zavareh, Azadeh / Li, Wenjie / Kavanagh, Karen L. / Trionfi, Aaron J. / Jones, Jason C. / Reno, John L. / Hsu, Julia W. P. / Talin, A. Alec et al. | 2008
- 1606
-
Atomic force microscopy and scanning tunneling microscopy-spectroscopy characterization of ZnO nanobeltsMaffeïs, T. G. G. / Penny, M. W. / Brown, M. R. / Liew, K. W. / Fu, D. / Tsolakoglou, N. / Wright, C. J. / Wilks, S. P. et al. | 2008
- 1609
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Tunable double dots and Kondo enhanced Andreev transport in InAs nanowiresSand-Jespersen, T. / Aagesen, M. / Sørensen, C. B. / Lindelof, P. E. / Nygård, J. et al. | 2008
- 1613
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Other one-dimensional systems and thermal propertiesDresselhaus, M. S. / Dresselhaus, G. / Hofmann, Mario et al. | 2008
- 1619
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Surface bound organic nanowiresBalzer, Frank / Schiek, Manuela / Rubahn, Horst-Günter / Al-Shamery, Katharina / Lützen, Arne et al. | 2008
- 1624
-
Generation of dc spin current in a narrow channel with Rashba and Dresselhaus spin-orbit interactionsTang, Chi-Shung / Kuan, Wen-Hsuan / Xu, Wen / Chang, Yia-Chung et al. | 2008
- 1628
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Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistorsKim, Raseong / Neophytou, Neophytos / Paul, Abhijeet / Klimeck, Gerhard / Lundstrom, Mark S. et al. | 2008
- L33
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Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studiesRamanathan, S. / Karthikeyan, A. / Govindarajan, S. A. / Kirsch, P. D. et al. | 2008
- L36
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Ion beam synthesis of Ni nanoparticles embedded in quartzKumar, P. / Kumar, Ravi / Kanjilal, D. / Knobel, M. / Thakur, P. / Chae, K. H. et al. | 2008