Optical reflectance in GaAs/AlGaAs quantum wells (English)
National licence
- New search for: Pearah, P. J.
- New search for: Klem, J.
- New search for: Henderson, T.
- New search for: Peng, C. K.
- New search for: Morkoc¸, H.
- New search for: Reynolds, D. C.
- New search for: Litton, C. W.
- New search for: Pearah, P. J.
- New search for: Klem, J.
- New search for: Henderson, T.
- New search for: Peng, C. K.
- New search for: Morkoc¸, H.
- New search for: Reynolds, D. C.
- New search for: Litton, C. W.
In:
Journal of Applied Physics
;
59
, 11
;
3847-3850
;
1986
- Article (Journal) / Electronic Resource
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Title:Optical reflectance in GaAs/AlGaAs quantum wells
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Contributors:Pearah, P. J. ( author ) / Klem, J. ( author ) / Henderson, T. ( author ) / Peng, C. K. ( author ) / Morkoc¸, H. ( author ) / Reynolds, D. C. ( author ) / Litton, C. W. ( author )
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Published in:Journal of Applied Physics ; 59, 11 ; 3847-3850
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Publisher:
- New search for: American Institute of Physics
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Publication date:1986-06-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 59, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3621
-
Electrostatic electron cyclotron resonance maser (linear theory)Liu, Shenggang / Zhang, Shichang / Yang, Zhonghai / Cheng, Xiaodong / Ouyang, Zhengbiao et al. | 1986
- 3627
-
Application of digital image analysis to pattern formation in polymer systemsTanaka, Hajime / Hayashi, Takafumi / Nishi, Toshio et al. | 1986
- 3644
-
The spectrum of highly ionized praseodymium and dysprosium from the Texas tokamak plasma in the 50–250‐A˚ rangeFinkenthal, M. / Lippmann, A. S. / Huang, L. K. / Yu, T. L. / Stratton, B. C. / Moos, H. W. / Klapisch, M. / Mandelbaum, P. / Bar Shalom, A. / Hodge, W. L. et al. | 1986
- 3650
-
Radiative transfer in multilayered random medium with laminar structure: Green’s function approachKaram, M. A. / Fung, A. K. et al. | 1986
- 3662
-
Transmittance of liquid‐crystal cells: A comparisonAnjaneyulu, Y. / Yoon, D. W. et al. | 1986
- 3665
-
Kinetics of nuclear super‐radianceBaldwin, G. C. / Feld, Michael S. et al. | 1986
- 3672
-
Splitting of domain of angles for incident wave vectors in elastic anisotropic mediaRokhlin, S. I. / Bolland, Ken / Adler, Laszlo et al. | 1986
- 3678
-
One‐dimensional collisions of two similar flat elastic solidsColtharp, David R. / Jones, Gordon E. et al. | 1986
- 3684
-
Experimental study of SF6/N2 and SF6/CCl2F2 mixtures by the steady‐state Townsend methodFre´chette, M. F. et al. | 1986
- 3694
-
Spark breakdown of liquid hydrocarbons. I. Fast current and voltage measurements of the spark breakdown in liquid n‐hexaneFuhr, Jitka / Schmidt, Werner F. / Sato, Shuji et al. | 1986
- 3702
-
Spark breakdown of liquid hydrocarbons. II. Temporal development of the electric spark resistance in n‐pentane, n‐hexane, 2,2 dimethylbutane, and n‐decaneFuhr, Jitka / Schmidt, Werner F. et al. | 1986
- 3709
-
Microparticles and their effects in vacuum diodesGray, Eoin W. et al. | 1986
- 3716
-
Fluctuations and nonuniformity of the ion beam current and electron flow in a long‐pulse, applied Br magnetically insulated ion diodeNakagawa, Yoshiro / Enomoto, Tamotsu et al. | 1986
- 3722
-
Laser initiation of an electrical discharge channel in cesium contained gasTamura, H. / Horioka, K. / Kasuya, K. et al. | 1986
- 3728
-
High‐pressure and high‐temperature crystal chemistry of beryllium oxideHazen, R. M. / Finger, L. W. et al. | 1986
- 3734
-
Imaging of radio‐carbon clusters in high‐purity germanium using a self‐detection schemeLuke, P. N. / Haller, E. E. et al. | 1986
- 3737
-
Characterization of EL2 distribution on semi‐insulating GaAs wafer by optically assisted imperfection profileWang, Faa‐Ching et al. | 1986
- 3743
-
Dynamical x‐ray diffraction from nonuniform crystalline films: Application to x‐ray rocking curve analysisWie, C. R. / Tombrello, T. A. / Vreeland, T. et al. | 1986
- 3747
-
Electron dislocation drag at low temperaturesGalligan, J. M. / Goldman, P. D. / Motowidlo, L. / Pellegrino, J. et al. | 1986
- 3756
-
Lattice‐graded epitaxial layersCook, Melvin S. et al. | 1986
- 3760
-
Influence of [V]/[III] beam ratio on crystal qualities of GaSb‐AlSb superlattice films grown by molecular‐beam epitaxySuzuki, Yoshifumi / Ohmori, Yutaka / Okamoto, Hiroshi et al. | 1986
- 3768
-
Interfacial CuAl2 precipitate nucleation and growth during the deposition of Al‐4% Cu‐1.5% Si alloysThomas, M. E. / Keyser, T. K. / Goo, E. K. W. et al. | 1986
- 3774
-
Electron mobility studies of the donor neutralization by atomic hydrogen in GaAs doped with siliconJalil, A. / Chevallier, J. / Azoulay, R. / Mircea, A. et al. | 1986
- 3778
-
Interface properties of plasma‐enhanced chemical vapor deposited SiOxNy/n‐GaAs metal‐insulator‐semiconductor systemChou, T. Y. / Lin, M. S. et al. | 1986
- 3783
-
Comprehensive study of AuMn p‐type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistorsDubon‐Chevallier, C. / Gauneau, M. / Bresse, J. F. / Izrael, A. / Ankri, D. et al. | 1986
- 3787
-
Degradation of the electrical characteristics of the Si–SiO2 interface induced by electron injectionFalcony, C. / Salas, F. H. et al. | 1986
- 3792
-
Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor depositionHase, I. / Kawai, H. / Kaneko, K. / Watanabe, N. et al. | 1986
- 3798
-
Calculation of warm electron transport in AlGaAs/GaAs single heterostructures using a Monte Carlo methodYokoyama, Kiyoyuki / Hess, Karl et al. | 1986
- 3803
-
Transitional behavior of pulsed dc losses in superconducting solenoids with self‐fields greater than B*Broach, J. Thomas / Lee, W. David / Eaton, Russell et al. | 1986
- 3807
-
Optical detector using superconducting BaPb0.7Bi0.3O3 thin filmsEnomoto, Youichi / Murakami, Toshiaki et al. | 1986
- 3815
-
Mathematical model for the calculation of magnetization in anisotropic materialsFurlani, Edward P. / Baker, Alan G. et al. | 1986
- 3820
-
Magneto‐optical properties of substituted cobalt ferrites: CoFe2−xMexO4 (Me=Rh3+, Mn3+, Ti4++Co2+)Martens, J. W. D. et al. | 1986
- 3824
-
Magnetic anisotropy of MnAl and MnAlC permanent magnet materialsPareti, L. / Bolzoni, F. / Leccabue, F. / Ermakov, A. E. et al. | 1986
- 3829
-
Study of the α and β relaxations on a commercial poly(vinyl chloride) by thermally stimulated creep and depolarization current techniquesdel Val, J. J. / Alegri´a, A. / Colmenero, J. / Lacabanne, C. et al. | 1986
- 3835
-
Band discontinuities and calculations of GaAs‐AlGaAs superlattice structuresChomette, A. / Deveaud, B. / Baudet, M. / Auvray, P. / Regreny, A. et al. | 1986
- 3841
-
Photoluminescence study of residual shallow acceptors in liquid‐encapsulated Czochralski‐grown InPKubota, Eishi / Katsui, Akinori / Sugii, Kiyomasa et al. | 1986
- 3847
-
Optical reflectance in GaAs/AlGaAs quantum wellsPearah, P. J. / Klem, J. / Henderson, T. / Peng, C. K. / Morkoc¸, H. / Reynolds, D. C. / Litton, C. W. et al. | 1986
- 3851
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Electron field emission from intentionally introduced particles on extended niobium surfacesNoer, R. J. / Niedermann, Ph. / Sankarraman, N. / Fischer, O&slash;. et al. | 1986
- 3861
-
Excimer laser etching of polymersSrinivasan, V. / Smrtic, Mark A. / Babu, S. V. et al. | 1986
- 3868
-
Electron flow and impedance of an 18‐blade frustum diodeSanford, T. W. L. / Lee, J. R. / Halbleib, J. A. / Quintenz, J. P. / Coats, R. S. / Stygar, W. A. / Clark, R. E. / Faucett, D. L. / Webb, D. / Heath, C. E. et al. | 1986
- 3881
-
High‐field tunneling calculations in metal‐oxide‐silicon capacitors incorporating the perimeter effectHook, Terence B. / Ma, T.‐P. et al. | 1986
- 3890
-
A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2Shatzkes, M. / Lloyd, J. R. et al. | 1986
- 3894
-
Electrical properties of Schottky diodes of Ti on highly doped GaAsZussman, A. et al. | 1986
- 3901
-
Modified image method: Application to the response of layered ohmic conductors to active electromagnetic sourcesBergeron, Clyde J. et al. | 1986
- 3909
-
Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100)Malik, R. J. / van der Ziel, J. P. / Levine, B. F. / Bethea, C. G. / Walker, J. et al. | 1986
- 3911
-
Electric field‐induced negative photoconductivity in GaAsWieder, H. H. / Hanson, Cynthia M. / Zuleeg, Rainer et al. | 1986
- 3914
-
Deposition of refractory metal films by rare‐gas halide laser photodissociation of metal carbonylsFlynn, Diane K. / Steinfeld, Jeffrey I. / Sethi, Dhanwant S. et al. | 1986
- 3917
-
Distributed amplifier using Josephson vortex flow transistorsMcGinnis, D. P. / Beyer, J. B. / Nordman, J. E. et al. | 1986
- 3919
-
Growth of crystalline zinc sulfide films on a (111)‐oriented silicon by molecular‐beam epitaxyYokoyama, Meiso / Ohta, Shin‐ichi et al. | 1986
- 3921
-
Formation of thin silicon oxide films by rapid thermal heatingPonpon, J. P. / Grob, J. J. / Grob, A. / Stuck, R. et al. | 1986
- 3923
-
Aberrations in diverging electron beams caused by an inhomogeneous current densityvan den Broek, M. H. L. M. et al. | 1986
- 3925
-
Photoluminescence from GaAs quantum wells under high electric fieldsPan, Janet L. / Ho¨pfel, Ralph A. / Shah, Jagdeep et al. | 1986
- 3928
-
Possibility of measuring shear waves in oblique‐impact experiments with in‐material piezoresistance gaugesRosenberg, Z. / Bless, S. J. et al. | 1986
- 3930
-
Transversely excited atmospheric‐pressure copper‐vapor laserIm, Kiegon / Sung, Nackchin / Kim, Jin J. et al. | 1986
- 3933
-
Erratum: Distribution of nitrogen and defects in SiOxNy/Si structures formed by the thermal nitridation of SiO2/Si [J. Appl. Phys. 59, 972 (1986)]Vasquez, R. P. / Madhukar, A. / Grunthaner, F. J. / Naiman, M. L. et al. | 1986