Bright‐field analysis of field‐emission cones using high‐resolution transmission electron microscopy and the effect of structural properties on current stability (English)
- New search for: Goodhue, W. D.
- New search for: Nitishin, P. M
- New search for: Harris, C. T.
- New search for: Bozler, C. O.
- New search for: Rathman, D. D.
- New search for: Johnson, G. D.
- New search for: Hollis, M. A.
- New search for: Goodhue, W. D.
- New search for: Nitishin, P. M
- New search for: Harris, C. T.
- New search for: Bozler, C. O.
- New search for: Rathman, D. D.
- New search for: Johnson, G. D.
- New search for: Hollis, M. A.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
;
12
, 2
;
693-696
;
1994
- Article (Journal) / Electronic Resource
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Title:Bright‐field analysis of field‐emission cones using high‐resolution transmission electron microscopy and the effect of structural properties on current stability
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Additional title:Bright‐field analysis of field‐emission cones
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Contributors:Goodhue, W. D. ( author ) / Nitishin, P. M ( author ) / Harris, C. T. ( author ) / Bozler, C. O. ( author ) / Rathman, D. D. ( author ) / Johnson, G. D. ( author ) / Hollis, M. A. ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1994-03-01
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Size:4 pages
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 12, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 515
-
Contributions of scanning probe microscopy and spectroscopy to the investigation and fabrication of nanometer‐scale structures*Wiesendanger, R. et al. | 1994
- 530
-
Low damage etching of InGaAs/AlGaAs by the electron cyclotron resonance plasma with Cl2/He mixture for heterojunction bipolar transistorsMiyakuni, S. / Sakai, M. / Hattori, R. / Izumi, S. / Shimura, T. / Sato, K. / Takano, H. / Otsubo, M. et al. | 1994
- 536
-
Reactive ion etching of AlInGaP and GaAs in SiCl4/CH4/Ar‐based plasmasChang, C. V. J. M. / Rijpers, J. C. N. et al. | 1994
- 540
-
Electron cyclotron resonance plasma oxidation studies of InPHu, Y. Z. / Joseph, J. / Irene, E. A. et al. | 1994
- 547
-
Optimal surface cleaning of GaAs (001) with atomic hydrogenPetit, E. J. / Houzay, F. et al. | 1994
- 551
-
Arsenic capping and decapping of InyAl1−yAs(100) grown by molecular beam epitaxyClark, S. A. / Dunscombe, C. J. / Woolf, D. A. / Wilks, S. P. / Williams, R. H. et al. | 1994
- 555
-
Investigation of chemically assisted ion beam etching for the fabrication of vertical, ultrahigh quality facets in GaAsHagberg, Mats / Jonsson, Björn / Larsson, Anders G. et al. | 1994
- 567
-
Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron‐enhanced reactive ion etchingGu, Tieer / Ditizio, R. A. / Fonash, S. J. / Awadelkarim, O. O. / Ruzyllo, J. / Collins, R. W. / Leary, H. J. et al. | 1994
- 574
-
Cleaning of silicon surfaces by hydrogen multipolar microwave plasma excited by distributed electron cyclotron resonanceRaynaud, P. / Pomot, C. et al. | 1994
- 581
-
Silicon dioxide deposition by electron cyclotron resonance plasma: Kinetic and ellipsometric studiesHernandez, M. J. / Garrido, J. / Piqueras, J. et al. | 1994
- 585
-
High temperature deposition of SiN films using low pressure chemical vapor deposition system for x‐ray mask applicationOhta, Tsuneaki / Kumar, Rakesh / Yamashita, Yoshio / Hoga, Hirosi et al. | 1994
- 589
-
Fundamental principles of phase shifting masks by Fourier optics: Theory and experimental verificationRonse, K. / Op de Beeck, M. / Van den hove, L. / Engelen, J. et al. | 1994
- 601
-
Tungsten trench etching in a magnetically enhanced triode reactorPendharkar, S. V. / Wolfe, J. C. et al. | 1994
- 605
-
Effects of substrate temperature and angular position on the properties of ion beam sputter deposited Fe films on (100) GaAs substratesBernstein, S. D. / Wong, T. Y. / Tustison, R. W. et al. | 1994
- 613
-
Selective deposition of metals on submicron resist patternsPetermann, J. / Hoffmann, T. / Martinez‐Salazar, J. et al. | 1994
- 616
-
Improvement in molecular‐beam epitaxy machine reliability using preventive maintenanceEbert, C. W. / Peticolas, L. J. / Reynolds, C. L. / Vuong, H. H. et al. | 1994
- 620
-
Optical beam‐deflection scanning force microscope with easy cantilever‐laser beam alignmentSugihara, Kazuyoshi / Sakai, Akira / Matsuda, Tetsuo / Toyosaki, Masao / Tanaka, Kuniyoshi / Matsuura, Akira / Tsukada, Shirou et al. | 1994
- 629
-
Arrays of gated field‐emitter cones having 0.32 μm tip‐to‐tip spacingBozler, Carl O. / Harris, Christopher T. / Rabe, Steven / Rathman, Dennis D. / Hollis, Mark A. / Smith, Henry I. et al. | 1994
- 633
-
Chemical vapor deposition and plasma‐enhanced chemical vapor deposition carbonization of silicon microtips *Zhirnov, V. V. / Givargizov, E. I. et al. | 1994
- 638
-
Process characterization and analysis of sealed vacuum microelectronic devicesMei, Q. / Zurn, S. / Polla, D. L. et al. | 1994
- 644
-
Knife‐edge thin film field emission cathodes on (110) silicon wafersLee, Bo / Elliott, T. S. / Mazumdar, T. K. / McIntyre, P. M. / Pang, Y. / Trost, H. J. et al. | 1994
- 648
-
Silicon vacuum microdiode with on‐chip anodeYoon, Yeong J. / Lu, Yicheng / Lalevic, B. / Zeto, Robert J. et al. | 1994
- 652
-
Oxidized amorphous silicon as gate insulator for silicon tipsPeters, D. / Paulus, I. / Stephani, D. et al. | 1994
- 655
-
Space‐charge effects in Spindt‐type field emission cathodesvan Veen, G. N. A. et al. | 1994
- 662
-
Field emission from pyramidal cathodes covered in porous siliconWilshaw, P. R. / Boswell, E. C. et al. | 1994
- 666
-
Improved monolithic vacuum field emission diodesLegg, James D. / Mason, Mark E. / Williams, Roger T. / Weichold, Mark H. et al. | 1994
- 672
-
Characterization of silicon field emission microtriodesLiu, D. / Marcus, R. B. et al. | 1994
- 676
-
Fabrication and characterization of silicon field emission diodes and triodesLi, Q. / Yuan, M. Y. / Kang, W. P. / Tang, S. H. / Xu, J. F. / Zhang, D. / Wu, J. L. et al. | 1994
- 680
-
Gated chromium volcano emittersPogemiller, J. E. / Busta, H. H. / Zimmerman, B. J. et al. | 1994
- 685
-
Stability of the emission of a microtipPy, C. / Baptist, R. et al. | 1994
- 689
-
Scaling of emission currents and of current fluctuations of gated silicon emitter ensemblesBusta, H. H. / Pogemiller, J. E. / Zimmerman, B. J. et al. | 1994
- 693
-
Bright‐field analysis of field‐emission cones using high‐resolution transmission electron microscopy and the effect of structural properties on current stabilityGoodhue, W. D. / Nitishin, P. M / Harris, C. T. / Bozler, C. O. / Rathman, D. D. / Johnson, G. D. / Hollis, M. A. et al. | 1994
- 697
-
SiO2‐induced silicon emitter emission instabilityBintz, W. J. / McGruer, N. E. et al. | 1994
- 700
-
Activation, stabilization degradation, and lifetime predictions of refractory thin films emitters operated in cold cathode magnetrons*Kopylov, M. F. et al. | 1994
- 703
-
Diffusion on an elliptical field emission cathode*Eremchenko, D. V. / Makhov, V. I. et al. | 1994
- 705
-
Atom probe analysis and field emission studies of siliconKing, R. A. / Mackenzie, R. A. D. / Smith, G. D. W. / Cade, N. A. et al. | 1994
- 710
-
Investigation of the operating modes of gated vacuum field emitter arrays to reduce failure ratesMeassick, S. / Xia, Z. / Chan, C. / Browning, J. et al. | 1994
- 713
-
Characterization of gridded field emittersHuang, M. / Mackenzie, R. A. D. / Godfrey, T. J. / Smith, G. D. W. et al. | 1994
- 717
-
Modification of Si field emitter surfaces by chemical conversion to SiCLiu, J. / Son, U. T. / Stepanova, A. N. / Christensen, K. N. / Wojak, G. J. / Givargizov, E. I. / Bachmann, K. J. / Hren, J. J. et al. | 1994
- 722
-
Transition metal carbides for use as field emission cathodesMackie, William A. / Hartman, Robert L. / Anderson, Mark A. / Davis, Paul R. et al. | 1994
- 727
-
Energy exchange processes in electron emission at high fields and temperaturesChung, M. S. / Cutler, P. H. / Miskovsky, N. M. / Sullivan, T. E. et al. | 1994
- 737
-
Calculated I–V characteristics of a gold liquid metal ion source for a prototype emitter modeled as a cone–sphereMiskovsky, Shana Nicole / Miskovsky, N. M. / Cutler, P. H. et al. | 1994
- 745
-
Calculations of capacitance and electric field of a vacuum field effect deviceHuang, Z.‐H. / Cutler, P. H. / Miskovsky, N. M. / Sullivan, T. E. et al. | 1994
- 749
-
Field emission diode characterization through model parameters extraction from current–voltage experimental dataNicolaescu, Dan / Avramescu, Viorel et al. | 1994
- 754
-
Use of boundary element methods in field emission computationsHartman, Robert L. / Mackie, William A. / Davis, Paul R. et al. | 1994
- 759
-
Technological parameters distribution effects on the current–voltage characteristics of field emitter arraysNicolaescu, Dan et al. | 1994
- 764
-
Simulations of fabricated field emitter structuresHong, D. / Aslam, M. / Feldmann, M. / Olinger, M. et al. | 1994
- 770
-
Time dependent, self‐consistent simulations of field emission from silicon using the Wigner distribution functionJensen, K. L. / Ganguly, A. K. et al. | 1994
- 776
-
Field emission from an elliptical boss: Exact and approximate forms for area factors and currentsJensen, K. L. / Zaidman, E. G. et al. | 1994
- 781
-
New electron excited light emitting materials*Vecht, A. / Smith, D. W. / Chadha, S. S. / Gibbons, C. S. / Koh, James / Morton, David et al. | 1994
- 785
-
Phosphor selection constraints in application of gated field‐emission microcathodes to flat panel displaysChakhovskoi, Andrei G. / Kesling, W. Dawson / Trujillo, Johann T. / Hunt, Charles E. et al. | 1994
- 790
-
Deflection microwave and millimeter‐wave amplifiersTang, Cha‐Mei / Lau, Y. Y. / Swyden, T. A. et al. | 1994
- 795
-
Study of the I–V characteristics of planar‐doped‐barrier electron emittersJiang, Wei‐Nan. / Mishra, Umesh K. et al. | 1994
- 801
-
Energy distribution of tunneling emission from Si‐gate metal–oxide–semiconductor cathodeYokoo, Kuniyoshi / Sato, Shinji / Koshita, Gen / Amano, Isato / Murota, Junichi / Ono, Shoich et al. | 1994
- 815
-
Metal plasma immersion ion implantation and deposition using vacuum arc plasma sourcesAnders, André / Anders, Simone / Brown, Ian G. / Dickinson, Michael R. / MacGill, Robert A. et al. | 1994
- 821
-
50‐kV pulse generator for plasma source ion implantation*Böhm, G. / Günzel, R. et al. | 1994
- 823
-
Metal ion implantation: Conventional versus immersionBrown, I. G. / Anders, A. / Anders, S. / Dickinson, M. R. / MacGill, R. A. et al. | 1994
- 828
-
Plasma ion implantation technology for broad industrial applicationDeb, Dipten / Siambis, John / Symons, Robert et al. | 1994
- 833
-
Analytical modeling of plasma immersion ion implantation target current using the SPICE circuit simulatorEn, William / Cheung, Nathan W. et al. | 1994
- 838
-
High power modulator for plasma ion implantationGoebel, Dan M. et al. | 1994
- 843
-
Overview of plasma source ion implantation research at University of Wisconsin–MadisonMalik, Shamim M. / Sridharan, K. / Fetherston, R. P. / Chen, A. / Conrad, and J. R. et al. | 1994
- 850
-
Plasma ion implantation technology at Hughes Research LaboratoriesMatossian, Jesse N. et al. | 1994
- 854
-
Survey of high‐voltage pulse technology suitable for large‐scale plasma source ion implantation processesReass, William A. et al. | 1994
- 861
-
Magnetic insulation of secondary electrons in plasma source ion implantationRej, D. J. / Wood, B. P. / Faehl, R. J. / Fleischmann, H. H. et al. | 1994
- 867
-
Development of plasma source ion implantation in ChinaTang, Bao Yin et al. | 1994
- 870
-
Initial operation of a large‐scale plasma source ion implantation experimentWood, B. P. / Henins, I. / Gribble, R. J. / Reass, W. A. / Faehl, R. J. / Nastasi, M. A. / Rej, D. J. et al. | 1994
- 875
-
Measurements of potentials and sheath formation in plasma immersion ion implantationCollins, G. A. / Tendys, J. et al. | 1994
- 880
-
Model for expanding sheaths and surface charging at dielectric surfaces during plasma source ion implantationEmmert, G. A. et al. | 1994
- 884
-
Application of particle‐in‐cell simulation to plasma source ion implantationFaehl, Rickey / De Volder, Barbara / Wood, Blake et al. | 1994
- 889
-
Two‐dimensional fluid modeling of time‐dependent plasma sheathHong, MunPyo / Emmert, G. A. et al. | 1994
- 897
-
Ion‐matrix sheath around a square barSheridan, T. E. / Alport, M. J. et al. | 1994
- 901
-
Two ion fluid model for plasma source ion implantationThomas, K. / Alport, M. J. / Sheridan, T. E. et al. | 1994
- 905
-
Energy and angle distributions of ions striking the spherical target* in plasma source ion implantationWang, Dezhen / Ma, Tengcai / Deng, Xinlu et al. | 1994
- 910
-
Target temperature prediction for plasma source ion implantationBlanchard, James P. et al. | 1994
- 918
-
Dose analysis of nitrogen plasma source ion implantation treatment of titanium alloysChen, A. / Firmiss, J. / Conrad, J. R. et al. | 1994
- 923
-
Nitrogen profiles of high dose, high temperature plasma source ion implantation treated austenitic stainless steelFranklyn, C. B. / Nothnagel, G. et al. | 1994
- 927
-
Plasma source ion implantation of oxygen and nitrogen in aluminum*Günzel, R. / Wieser, E. / Richter, E. / Steffen, J. et al. | 1994
- 931
-
Structure and wear behavior of nitrogen‐implanted aluminum alloys*Xia, Lifang / Wang, Rizhi / Ma, Xinxin / Sun, Yue et al. | 1994
- 935
-
Significance of nitrogen mass transfer mechanism on the nitriding behavior of austenitic stainless steelSamandi, M. / Shedden, B. A. / Bell, T. / Collins, G. A. / Hutchings, R. / Tendys, J. et al. | 1994
- 940
-
Enhanced pitting corrosion resistance of 304L stainless steel by plasma ion implantationSmith, Preston P. / Buchanan, R. A. / Roth, J. Reece / Kamath, Sanjay G. et al. | 1994
- 945
-
Nitrogen plasma source ion implantation of aluminumWalter, K. C. et al. | 1994
- 951
-
Structural characterization of plasma‐doped silicon by high resolution x‐ray diffractionChapek, D. L. / Conrad, J. R. / Matyi, R. J. / Felch, S. B. et al. | 1994
- 956
-
Anomalous behavior of shallow BF3 plasma immersion ion implantationJones, Erin C. / En, William / Ogawa, Shinichi / Fraser, David B. / Cheung, Nathan W. et al. | 1994
- 962
-
Plasma immersion ion implantation doping experiments for microelectronicsQin, Shu / Chan, Chung et al. | 1994
- 969
-
Characteristics of a plasma doping system for semiconductor device fabricationSheng, T. / Felch, S. B. / Cooper, C. B. et al. | 1994
- 973
-
Plasma immersion ion implantation for semiconductor thin film growthTuszewski, M. / Scheuer, J. T. / Campbell, I. H. / Laurich, B. K. et al. | 1994
- 977
-
Mechanical properties of Si‐diamondlike carbon films formed by ion beam assisted depositionFountzoulas, C. G. / Kattamis, T. Z. / Demaree, J. D. / Kosik, W. E. / Franzen, W. / Hirvonen, J. K. et al. | 1994
- 981
-
Carbonaceous surface layers deposited on TiN coatings by ion implantationFranck, M. / Blanpain, B. / Celis, J. P. / Roos, J. R. / Pattyn, H. et al. | 1994
- 986
-
Ion‐beam‐induced densification of sol‐gel ceramic thin filmsLevine, Timothy E. / Revesz, Peter / Giannelis, Emmanuel P. / Mayer, James W. et al. | 1994
- 991
-
Potential applications of fusion neutral beam facilities for advanced material processingWilliams, J. M. / Tsai, C. C. / Stirling, W. L. / Whealton, J. H. et al. | 1994
- 1009
-
Ordered and randomly disordered AlAs/GaAs short‐period superlatticesArent, D. J. / Alonso, R. / Horner, G. / Bode, M. / Olson, J. M. / Yin, X. / DeLong, M. C. / SpringThorpe, A. J. / Majeed, A. et al. | 1994
- 1013
-
Growth optimization of molecular beam epitaxy grown InAlAs on InPChoi, Woo‐Young / Fonstad, Clifton G. et al. | 1994
- 1016
-
Modulated arsenic molecular‐beam epitaxial growth of In0.48Al0.52AsChou, S. T. / Cheng, K. Y. et al. | 1994
- 1019
-
Growth studies on In0.5Ga0.5As/AlGaAs quantum wells grown on GaAs with a linearly graded InGaAs bufferChui, H. C. / Harris, J. S. et al. | 1994
- 1023
-
Accurate measurements of transients and intentional rates of change in molecular beam epitaxy growth rate calibrationsFernandez, Rouel / Harwit, Alex / Kinell, Don et al. | 1994
- 1026
-
External photoluminescence efficiency and minority carrier lifetime of (Al,Ga)As/GaAs multi‐quantum‐well samples grown by molecular beam epitaxy using both As2 and As4Foxon, C. T. / Cheng, T. S. / Dawson, P. / Lacklison, D. E. / Orton, J. W. / Van der Vleuten, W. / Hughes, O. H. / Henini, M. et al. | 1994
- 1029
-
Bonding and migration of 111In atoms on GaAs surfaces studied by perturbed‐angular‐correlation spectroscopyFu, Jianming / Adams, James M. / Catchen, Gary L. / Miller, D. L. / Kim, J. / Gallagher, M. C. / Willis, R. F. et al. | 1994
- 1034
-
Structural properties of highly mismatched InGaAs‐based devices grown by molecular beam epitaxy on GaAs substratesGoorsky, M. S. / Eldredge, J. W. / Lord, S. M. / Harris, J. S. et al. | 1994
- 1038
-
Interface analysis of dry etched and molecular beam epitaxial regrown AlGaAsGrober, L. H. / Hong, M. / Mannaerts, J. P. / Freund, R. S. / Luftman, H. S. / Chu, S. N. G. et al. | 1994
- 1043
-
Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxyHiyamizu, S. / Shimomura, S. / Wakejima, A. / Kaneko, S. / Adachi, A. / Okamoto, Y. / Sano, N. / Murase, K. et al. | 1994
- 1047
-
In situ nonalloyed ohmic contacts to p‐GaAsHong, M. / Vakhshoori, D. / Mannaerts, J. P. / Thiel, F. A. / Wynn, J. D. et al. | 1994
- 1050
-
Effects of As4 flux on reflection high‐energy electron diffraction oscillations during growth of GaAs at low temperaturesIbbetson, J. P. / Mirin, R. P. / Mishra, U. K. / Gossard, A. C. et al. | 1994
- 1053
-
Quantum‐confined Stark shift observed by electroluminescence and circularpolarized luminescence excitation spectroscopy in GaAs/AlGaAs coupled quantum wellsKato, Y. / Takahashi, Y. / Fukatsu, S. / Shiraki, Y. / Ito, R. et al. | 1994
- 1056
-
Raman scattering study of the intermixing of AlAs monolayers in GaAs grown by molecular‐beam epitaxyKatzer, D. S. / Shanabrook, B. V. / Gammon, D. et al. | 1994
- 1059
-
Low‐temperature growth and characterization of GaAs epitaxial layer on (111)B GaAs substratesKim, G. H. / Gray, J. L. / Yoo, H. M. / Ohuchi, F. S. et al. | 1994
- 1063
-
Molecular‐beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAsLeonard, D. / Krishnamurthy, M. / Fafard, S. / Merz, J. L. / Petroff, P. M. et al. | 1994
- 1067
-
Molecular beam epitaxial growth of GaAs on CaF2/Si(111) substrateLi, Weidan / Anan, Takayoshi / Schowalter, Leo J. et al. | 1994
- 1071
-
Realization of three‐dimensionally confined structures via one‐step in situ molecular beam epitaxy on appropriately patterned GaAs(111)B and GaAs(001)Rajkumar, K. C. / Madhukar, A. / Chen, P. / Konkar, A. / Chen, L. / Rammohan, K. / Rich, D. H. et al. | 1994
- 1075
-
Application of the digital alloy composition grading technique to strained InGaAs/GaAs/AlGaAs diode laser active regionsCody, Jeffrey G. / Mathine, David L. / Droopad, Ravi / Maracas, George N. / Rajesh, Ramamurti / Carpenter, Ray W. et al. | 1994
- 1078
-
Determination of AlAs mole fraction in AlxGa1−xAs using Raman spectroscopy and x‐ray diffractionSolomon, G. S. / Kirillov, D. / Chui, H. C. / Harris, J. S. et al. | 1994
- 1082
-
Random‐period superlattice quantum wellsShih, Y. C. Albert / Sadra, K. / Streetman, B. G. et al. | 1994
- 1086
-
Characterization and improvement of the layer uniformity for large‐area quantum well device arrays grown in an Intevac/Varian Gen II molecular beam epitaxy systemSvensson, Stefan P. / Towner, Frederick J. et al. | 1994
- 1091
-
Molecular beam epitaxy of MnAs thin films on GaAsTanaka, M. / Harbison, J. P. / Sands, T. / Cheeks, T. L. / Keramidas, V. G. / Rothberg, G. M. et al. | 1994
- 1095
-
Study of lattice‐mismatched (In,Ga)As/GaAs heterostructures on the unconventional (110) GaAs surfaceSun, Decai / Towe, Elias / Bennett, Brian R. et al. | 1994
- 1099
-
Growth of the (In,Al,Ga)As quaternary alloy system on GaAs at low substrate temperatures by molecular‐beam epitaxyTowe, E. / Sun, D. / Bennett, B. R. et al. | 1994
- 1102
-
Lateral variation of indium content in InGaAs grown on GaAs channeled substrates by molecular beam epitaxyWakejima, A. / Inoue, A. / Kitada, T. / Tomita, N. / Shimomura, S. / Hiyamizu, S. / Fujii, M. / Yamamoto, T. / Kobayashi, K. / Sano, N. et al. | 1994
- 1106
-
Electrical characteristics of InP grown by molecular beam epitaxy using a valved phosphorus cracking cellBaillargeon, J. N. / Cho, A. Y. / Fischer, R. J. / Pearah, P. J. / Cheng, K. Y. et al. | 1994
- 1110
-
Chemical beam epitaxy of strain balanced GaP/GaAs/InP/GaAs superlatticesBensaoula, A. H. / Freundlich, A. / Bensaoula, A. / Rossignol, V. / Ponchet, A. et al. | 1994
- 1113
-
Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxyJelen, C. / Slivken, S. / He, X. G. / Razeghi, M. / Shastry, S. et al. | 1994
- 1116
-
Structural and optical characterizations of InAsP/InP strained multiple quantum wells grown on InP (111)B substratesHou, H. Q. / Tu, C. W. / Shan, W. / Hwang, S. J. / Song, J. J. / Chu, S. N. G. et al. | 1994
- 1119
-
Operation of a molecular‐beam epitaxy machine employing a valved solid phosphorus sourceWicks, G. W. / Koch, M. W. / Johnson, F. G. / Varriano, J. A. / Kohnke, G. E. / Colombo, P. et al. | 1994
- 1122
-
Molecular beam epitaxy grown AlAsSb/GaAsSb distributed Bragg reflector on InP substrate operating near 1.55 μmBlum, O. / Fritz, I. J. / Dawson, L. R. / Howard, A. J. / Headley, T. J. / Olsen, J. A. / Klem, J. F. / Drummond, T. J. et al. | 1994
- 1125
-
Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfacesCollins, D. A. / Wang, M. W. / Grant, R. W. / McGill, T. C. et al. | 1994
- 1129
-
Recombination lifetime in InAs–Ga1−xInxSb superlatticesYoungdale, E. R. / Meyer, J. R. / Hoffman, C. A. / Bartoli, F. J. / Miles, R. H. / Chow, D. H. et al. | 1994
- 1133
-
Reflection high‐energy electron diffraction study of the GaSb surface during molecular beam epitaxyYano, Mitsuaki / Yamamoto, Kazuhiko / Utatsu, Takashige / Inoue, Masataka et al. | 1994
- 1136
-
Molecular‐beam epitaxy growth of Bi epilayers and Bi–CdTe superlatticesDiVenere, A. / Yi, X. J. / Hou, C. L. / Wang, H. C. / Chen, J. / Ketterson, J. B. / Wong, G. K. / Meyer, J. R. / Hoffman, C. A. / Bartoli, F. J. et al. | 1994
- 1140
-
First indications of spontaneous ordering in ZnSe0.50Te0.50 alloyLuo, H. / Samarth, N. / Short, S. W. / Xin, S. H. / Furdyna, J. K. / Ahrenkiel, P. / Bode, M. H. / Al‐Jassim, M. M. et al. | 1994
- 1143
-
Migration enhanced epitaxy and optical properties of ZnSe/CdSe digital alloy quantum wellsShort, S. W. / Luo, H. / Xin, S. / Yin, A. / Pareek, A. / Dobrowolska, M. / Furdyna, J. K. et al. | 1994
- 1146
-
Characteristic Zeeman patterns in novel graded gap II–VI quantum well structuresHagston, W. E. / Weston, S. J. / O’Neill, M. / Stirner, T. / Harrison, P. / Hogg, J. H. C. / Ashenford, D. E. / Lunn, B. et al. | 1994
- 1150
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Exciton dynamics in multiquantum well CdTe–Cd1−xMnxTe systemsStirner, T. / Hagston, W. E. / O’Neill, M. / Harrison, P. et al. | 1994
- 1153
-
Gas source molecular beam epitaxy growth of ZnSe on novel buffer layersLu, K. / Fisher, P. A. / House, J. L. / Ho, E. / Coronado, C. A. / Petrich, G. S. / Kolodziejski, L. A. / Hua, G.‐C. / Otsuka, N. et al. | 1994
- 1156
-
Time‐of‐flight measurement of carrier transport and carrier collection in strained Si1−xGex/Si quantum wellsFukatsu, S. / Fujiwara, A. / Muraki, K. / Takahashi, Y. / Shiraki, Y. et al. | 1994
- 1160
-
Room temperature photoluminescence in strained Si1−xGex/Si quantum wellsFukatsu, S. / Sunamura, H. / Shiraki, Y. et al. | 1994
- 1163
-
Novel integration of a group IV electron‐beam deposition capability with a III–V molecular beam epitaxy system*Lee, H. P. / Szalkowski, F. J. / Sato, D. L. / Liu, X. / Ranalli, E. / George, T. et al. | 1994
- 1167
-
Study of interaction between incident silicon and germanium fluxes and SiO2 layer using solid‐source molecular beam epitaxyYun, Sun Jin / Lee, Seung‐Chang / Kim, Bo‐Woo / Kang, Sang‐Won et al. | 1994
- 1170
-
Atomic layer‐by‐layer epitaxy of cuprate superconductorsBozovic, I. / Eckstein, J. N. / Virshup, G. F. et al. | 1994
- 1174
-
Growth morphologies of (001), (100), and (010) oriented Er5Ba7Cu12Oy high‐temperature superconductor thin films on various substratesChoudhary, K. M. / Seshadri, P. / Black, M. et al. | 1994
- 1178
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Effects of oxygen on the sublimation of alkaline earths from effusion cellsHellman, E. S. / Hartford, E. H. et al. | 1994
- 1181
-
Atomically controlled growth of GaAs/NiAl/GaAs structures by molecular‐beam epitaxyHirono, S. / Tanimoto, M. / Inoue, N. et al. | 1994
- 1184
-
Stabilized α‐Sn grown at high temperature by molecular beam epitaxyKimata, M. / Suzuki, T. / Saino, K. / Kawamura, K. / Hobbs, A. et al. | 1994
- 1186
-
Growth of group III nitrides on Si(111) by plasma‐assisted molecular beam epitaxyStevens, K. S. / Ohtani, A. / Schwartzman, A. F. / Beresford, R. et al. | 1994
- 1190
-
Carbon p+ doping of molecular‐beam epitaxial GaAs films using carbon tetrabromideLemonias, P. J. / Hoke, W. E. / Weir, D. G. / Hendriks, H. T. et al. | 1994
- 1193
-
Carbon doping of InGaAs in solid‐source molecular beam epitaxy using carbon tetrabromideHwang, Wen‐Yen / Miller, D. L. / Chen, Y. K. / Humphrey, D. A. et al. | 1994
- 1197
-
Some doping results in ZnSe grown by molecular beam epitaxyLi, L. K. / Wang, W. I. / Gaines, J. M. / Petruzzello, J. / Marshall, T. et al. | 1994
- 1200
-
Carbon doping by a compact electron beam sourceVan Hove, J. M. / Chow, P. P. / Rosamond, M. F. / Carpenter, G. L. / Chow, L. A. et al. | 1994
- 1203
-
Boron delta doping in Si and SiGe and its application toward field‐effect transistor devicesCarns, T. K. / Zheng, X. / Wang, K. L. / Wu, S. L. / Wang, S. J. et al. | 1994
- 1207
-
Pyrometric interferometry for real time molecular beam epitaxy process monitoringBöbel, F. G. / Möller, H. / Wowchak, A. / Hertl, B. / Van Hove, J. / Chow, L. A. / Chow, P. P. et al. | 1994
- 1211
-
Determination of molecular beam epitaxial growth parameters by ellipsometryDroopad, R. / Kuo, C. H. / Anand, S. / Choi, K. Y. / Maracas, G. N. et al. | 1994
- 1214
-
Measurement of GaAs temperature‐dependent optical constants by spectroscopic ellipsometryKuo, C. H. / Anand, S. / Droopad, R. / Choi, K. Y. / Maracas, G. N. et al. | 1994
- 1217
-
Dual beam atomic absorption spectroscopy for controlling thin film deposition ratesBenerofe, S. J / Ahn, C. H. / Wang, M. M. / Kihlstrom, K. E. / Do, K. B. / Arnason, S. B. / Fejer, M. M. / Geballe, T. H. / Beasley, M. R. / Hammond, R. H. et al. | 1994
- 1221
-
In situ thickness monitoring and control for highly reproducible growth of distributed Bragg reflectorsHoung, Y. M. / Tan, M. R. T. / Liang, B. W. / Wang, S. Y. / Mars, D. E. et al. | 1994
- 1225
-
Factors affecting the temperature uniformity of semiconductor substrates in molecular‐beam epitaxyJohnson, S. R. / Lavoie, C. / Nodwell, E. / Nissen, M. K. / Tiedje, T. / Mackenzie, J. A. et al. | 1994
- 1229
-
Efficient liquid nitrogen supply system for the cooling shroud in a molecular beam epitaxy systemCook, J. W. / Schetzina, J. F. et al. | 1994
- 1232
-
Atomic nitrogen production in a molecular‐beam epitaxy compatible electron cyclotron resonance plasma sourceVaudo, R. P. / Cook, J. W. / Schetzina, J. F. et al. | 1994
- 1236
-
Reflection high‐energy electron diffraction intensity oscillations during molecular‐beam epitaxy on rotating substratesvan der Wagt, Jan P. A. / Harris, James S. et al. | 1994
- 1239
-
Molecular beam epitaxial growth and properties of Si‐doped GaAs/AlGaAs quantum wellsAsom, M. T. / Livescu, G. / Swaminathan, V. / Geva, M. / Luther, L. et al. | 1994
- 1242
-
Electrical and optical properties of heavily n‐doped GaSb–AlSb multiquantum well structures for infrared photodetector applicationsBrar, Berinder / Samoska, Lorene / Kroemer, Herbert / English, John H. et al. | 1994
- 1246
-
Growth of GaAs light modulators on Si by gas source molecular‐beam epitaxy for 850 nm optical interconnectsCunningham, J. E. / Goossen, K. W. / Walker, J. A. / Jan, W. / Santos, M. / Miller, D. A. B. et al. | 1994
- 1251
-
Chemical beam epitaxy of InP‐based solar cells and tunnel junctionsVilela, M. F. / Rossignol, V. / Bensaoula, A. / Medelci, N. / Freundlich, A. et al. | 1994
- 1254
-
Molecular beam epitaxy growth of pseudomorphic II–VI multilayered structures for blue/green laser diodes and light‐emitting diodesHan, J. / He, L. / Grillo, D. C. / Clark, S. M. / Gunshor, R. L. / Jeon, H. / Salokatve, A. / Nurmikko, A. V. / Hua, G. C. / Otsuka, N. et al. | 1994
- 1258
-
Buried heterostructure laser diodes fabricated using in situ processingHong, M. / Vakhshoori, D. / Grober, L. H. / Mannaerts, J. P. / Asom, M. T. / Wynn, J. D. / Thiel, F. A. / Freund, R. S. et al. | 1994
- 1262
-
Blue/green ZnSe–ZnCdSe light‐emitting diodes and photopumped laser structures grown by molecular beam epitaxy on ZnSe substratesRen, J. / Eason, D. B. / Yu, Z. / Sneed, B. / Cook, J. W. / Schetzina, J. F. / El‐Masry, N. A. / Yang, X. H. / Song, J. J. / Cantwell, Gene et al. | 1994
- 1266
-
Molecular‐beam epitaxy growth of high‐performance midinfrared diode lasersTurner, G. W. / Choi, H. K. / Calawa, D. R. / Pantano, J. V. / Chludzinski, J. W. et al. | 1994
- 1269
-
Photocontrolled double‐barrier resonant‐tunneling diodeLi, H. S. / Chen, Y. W. / Wang, K. L. / Pan, D. S. / Chen, L. P. / Liu, J. M. et al. | 1994
- 1273
-
Studies of Si segregation in GaAs using current–voltage characteristics of quantum well infrared photodetectorsWasilewski, Z. R. / Liu, H. C. / Buchanan, M. et al. | 1994
- 1277
-
One‐dimensional wire formed by molecular‐beam epitaxial regrowth on a patterned pnpnp GaAs substrateBurroughes, J. H. / Grimshaw, M. P. / Leadbeater, M. L. / Ritchie, D. A. / Pepper, M. / Jones, G. A. C. et al. | 1994
- 1280
-
High‐quality strained quantum wires grown by molecular beam epitaxy on (100) GaAs substrateChen, Y.‐P. / Reed, J. D. / Schaff, W. J. / Eastman, L. F. et al. | 1994
- 1283
-
Current‐controlled negative differential resistance in InAs/AlxGa1−xSb tunnel structuresChow, D. H. / Schulman, J. N. et al. | 1994
- 1286
-
50 nm GaAs/AlAs wire structures grown on corrugated GaAsMiller, David J. / Harris, James S. et al. | 1994
- 1290
-
Effect of the proximity of an ex situ patterned interface on the quality of two‐dimensional electron gases at GaAs/AlGaAs heterojunctionsGrimshaw, M. P. / Ritchie, D. A. / Burroughs, J. H. / Jones, G. A. C. et al. | 1994
- 1293
-
Fabrication of independent contacts to two closely spaced two‐dimensional electron gases using molecular beam epitaxy regrowth and in situ focused ion beam lithographyBrown, K. M. / Linfield, E. H. / Ritchie, D. A. / Jones, G. A. C. / Grimshaw, M. P. / Churchill, A. C. et al. | 1994
- 1296
-
Optimization of high mobility two‐dimensional hole gasesSimmons, M. Y. / Ritchie, D. A. / Zailer, I. / Churchill, A. C. / Jones, G. A. C. et al. | 1994
- 1300
-
AlGaAs/Ge/GaAs heterostructures grown by molecular beam epitaxyWang, Y. / Baruch, N. / Wang, W. I. / Cheney, M. E. / Huang, C. I. / Scherer, R. L. et al. | 1994
- 1303
-
Observation of quantum mechanical reflections of electrons at an in situ grown GaAs/aluminum Schottky barrierWeckwerth, M. V. / van der Wagt, Jan P. A. / Harris, James S. et al. | 1994
- 1306
-
Modulation‐doped InAlAs/InGaAs quantum well structures for high electron mobility transistorsKlein, W. / Böhm, G. / Sexl, M. / Grigull, S. / Heiss, H. / Tränkle, G. / Weimann, G. et al. | 1994
- 1309
-
Double quantum well charge transport in pseudomorphic Al0.3Ga0.7As/In0.15Ga0.85As/GaAs modulation doped heterostructuresYoung, A. P. / Fernandez, J. M. / Chen, Jianhui / Wieder, H. H. et al. | 1994