Investigation of the thermal dissociation of PH3 and NH3 using quadrupole mass spectrometry (English)
National licence
- New search for: Baillargeon, J. N.
- New search for: Cheng, K. Y.
- New search for: Jackson, S. L.
- New search for: Stillman, G. E.
- New search for: Baillargeon, J. N.
- New search for: Cheng, K. Y.
- New search for: Jackson, S. L.
- New search for: Stillman, G. E.
In:
Journal of Applied Physics
;
69
, 12
;
8025-8030
;
1991
- Article (Journal) / Electronic Resource
-
Title:Investigation of the thermal dissociation of PH3 and NH3 using quadrupole mass spectrometry
-
Contributors:Baillargeon, J. N. ( author ) / Cheng, K. Y. ( author ) / Jackson, S. L. ( author ) / Stillman, G. E. ( author )
-
Published in:Journal of Applied Physics ; 69, 12 ; 8025-8030
-
Publisher:
- New search for: American Institute of Physics
-
Publication date:1991-06-15
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Source:
Table of contents – Volume 69, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 7973
-
Electromagnetic fields for an irregularly shaped, near‐spherical particle illuminated by a focused laser beamBarton, J. P. / Alexander, D. R. et al. | 1991
- 7987
-
The electromagnetic field of a horizontal electric dipole in the presence of a three‐layered regionKing, Ronold W. P. et al. | 1991
- 7996
-
Cl2 reactive ion etching mechanisms studied by in situ determination of ion energy and ion fluxManenschijn, A. / van der Drift, E. / Janssen, G. C. A. M. / Radelaar, S. et al. | 1991
- 8005
-
Pump polarization effects in cw dye lasersCasperson, Lee W. / Sandle, W. J. / Wilson, A. C. / Warrington, D. M. / Ballagh, R. J. et al. | 1991
- 8011
-
Second‐order nonlinear optical properties and relaxation characteristics of poled linear epoxy polymers with tolane chromophoresJungbauer, D. / Teraoka, I. / Yoon, D. Y. / Reck, B. / Swalen, J. D. / Twieg, R. / Willson, C. G. et al. | 1991
- 8018
-
Excitation of ultrasonic Lamb waves in piezoelectric platesJoshi, S. G. / Jin, Y. et al. | 1991
- 8025
-
Investigation of the thermal dissociation of PH3 and NH3 using quadrupole mass spectrometryBaillargeon, J. N. / Cheng, K. Y. / Jackson, S. L. / Stillman, G. E. et al. | 1991
- 8031
-
Movement of phase boundaries of metals subjected to surface periodic energy pulsesSmurov, I. Yu. / Uglov, A. A. / Lashin, A. M. / Matteazzi, P. / Tagliaferri, V. / Covelli, L. et al. | 1991
- 8037
-
Mathematical model of internal temperature profile of GaAs during rapid thermal annealingThird, C. E. / Weinberg, F. / Young, L. et al. | 1991
- 8042
-
Characterization of lubricated states on carbon coated media by low energy photoelectron spectroscopy method in ambient atmosphereNishimori, Ken‐ichi / Tanaka, Kohichi / Inoue, Yasunobu et al. | 1991
- 8047
-
A continuum model for low‐pressure radio‐frequency dischargesMeyyappan, M. et al. | 1991
- 8052
-
A method for the phase measurement of the multipacting electronsNoori, Majid T. / Harmon, Gerald S. et al. | 1991
- 8056
-
High‐dose neutron generation from plasma ion implantationUhm, Han S. / Lee, W. M. et al. | 1991
- 8064
-
Ion extraction characteristics on a barium plasma produced between grounded parallel plate electrodes and a positively biased upper plate electrodeYamada, Kimio / Tetsuka, Tsutomu / Deguchi, Yoshihiro et al. | 1991
- 8072
-
Investigation of Se+‐implanted GaAs layers by temperature‐dependent dechannelingBachmann, T. / Wesch, W. / Ga¨rtner, K. / Bartsch, H. et al. | 1991
- 8076
-
Scanning tunneling microscopy of hexagonal BN grown on graphiteFukumoto, H. / Hamada, T. / Endo, T. / Osaka, Y. et al. | 1991
- 8076
-
Scanning tunneling microcopy of hexagonal BN grown on graphiteFukumoto, H. / Hamada, T. / Endo, T. / Osaka, Y. et al. | 1991
- 8079
-
Fourier transform infrared attenuated total reflexion spectra of ion-implanted silica glassesHosono, H. et al. | 1991
- 8079
-
Fourier transform infrared attenuated total reflection spectra of ion‐implanted silica glassesHosono, Hideo et al. | 1991
- 8083
-
Mechanisms of thermal stress relaxation and stress‐induced voiding in narrow aluminum‐based metallizationsKorhonen, M. A. / Paszkiet, C. A. / Li, Che‐Yu et al. | 1991
- 8092
-
Study of point defect cluster produced by BF2+ implantation in silicon single crystalsKrishan Lal / Bhagavannarayana, G. / Virdi, G.S. et al. | 1991
- 8092
-
Study of point defect clusters produced by BF+2 implantation in silicon single crystalsLal, Krishan / Bhagavannarayana, G. / Virdi, G. S. et al. | 1991
- 8096
-
X‐ray diffraction from d spacing gradients along ion‐implanted zonesRao, Satish I. / Houska, C. R. et al. | 1991
- 8104
-
X‐ray diffuse scattering from a nitrogen‐implanted niobium filmRao, Satish I. / Houska, C. R. / Grabowski, K. / Ice, G. / Sparks, C. J. et al. | 1991
- 8111
-
X‐ray diffraction analysis of concentration and residual stress gradients in nitrogen‐implanted niobium and molybdenumRao, Satish I. / He, Baoping / Houska, C. R. / Grabowski, K. et al. | 1991
- 8119
-
Screened potential of a charged dislocation in piezoelectric semiconductorsShintani, K. et al. | 1991
- 8122
-
The thermal conductivity of isotopically enriched polycrystalline diamond filmsAnthony, T. R. / Fleischer, J. L. / Olson, J. R. / Cahill, David G. et al. | 1991
- 8122
-
The thermal conductivity of isotopically enriched polycristalline diamond filmsAnthony, T.R. / Fleischer, J.L. / Olson, J.R. / Cahill, D.G. et al. | 1991
- 8126
-
Li and Sb doping effects on the growth behavior of ZnS on GaP substratesFuke, Shunro / Sugihara, Yoshihide / Maezawa, Chikako / Kuwahara, Kazuhiro / Imai, Tetsuji et al. | 1991
- 8130
-
Characterization of epitaxial yttria‐stabilized zirconia/Si interface by ion beam channelingFukumoto, H. / Yamamoto, M. / Osaka, Y. et al. | 1991
- 8133
-
Simulation of transient boron diffusion during rapid thermal annealing in siliconHeinrich, Michael / Budil, Matthias / Po¨tzl, Hans W. et al. | 1991
- 8139
-
Growth and characterization of Fe‐doped semi‐insulating InP prepared by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphineHuang, Rong‐Ting / Appelbaum, Ami / Renner, Daniel / Burke, Wally / Zehr, Stanley W. et al. | 1991
- 8145
-
Characterization of diamond films synthesized in the microwave plasmas of CO/H2 and CO/O2/H2 systems at low temperatures (403–1023 K)Muranaka, Yasushi / Yamashita, Hisao / Miyadera, Hiroshi et al. | 1991
- 8154
-
Defect‐free growth of AlxGa1−xAs by liquid‐phase epitaxy on V‐grooved (001) GaAs substratesRechenberg, I. / Stoeff, S. / Krahl, M. / Bimberg, D. / Ho¨pner, A. et al. | 1991
- 8158
-
Growth and characterization of undoped and in situ doped Si(1-x)Ge(x) on patterned oxide Si substrates by very low pressure chemical vapor deposition at 700 and 625 CelTasi, C. / Syun-Ming Jang / Tsai, J. / Reif, R. et al. | 1991
- 8158
-
Growth and characterization of undoped and in situ doped Si1−xGex on patterned oxide Si substrates by very low pressure chemical vapor deposition at 700 and 625 °CTsai, Curtis / Jang, Syun‐Ming / Tsai, Julie / Reif, Rafael et al. | 1991
- 8161
-
Very high critical current in a long YBa2Cu3O(7-delta) single crystalline rodAguillon, C. / McCartney, D.G. / Regnier, P. / Senoussi, S. / Tatlock, G.J. et al. | 1991
- 8164
-
Heteroepitaxy and characterization of Ge‐rich SiGe alloys on GaAsVenkatasubramanian, R. / Timmons, M. L. / Mantini, M. / Kao, C. T. / Parikh, N. R. et al. | 1991
- 8168
-
An Auger and electron energy‐loss study of reactions at the Ti‐SiO2 interfaceWallart, X. / Zeng, H. S. / Nys, J. P. / Dalmai, G. / Friedel, P. et al. | 1991
- 8177
-
Comparison of deep centers in semi‐insulating liquid‐encapsulated Czochralski and vertical‐gradient freeze GaAsFang, Z‐Q. / Look, D. C. et al. | 1991
- 8183
-
Energy levels and crystals quantum states of trivalent holmium in yttrium aluminum garnetGruber, J.B. / Hills, M.E. / Seltzer, M.D. / Stevens, S.B. / Morrison, C.A. / Turner, G.A. / Kokta, M.R. et al. | 1991
- 8183
-
Energy levels and crystal quantum states of trivalent holmium in yttrium aluminum garnetGruber, John B. / Hills, Marian E. / Seltzer, Michael D. / Stevens, Sally B. / Morrison, Clyde A. / Turner, Gregory A. / Kokta, Milan R. et al. | 1991
- 8205
-
Interaction of gold‐related and irradiation‐induced defects in siliconKoteswara Rao, K. S. R. / Kumar, V. / Premachandran, S. K. / Raghunath, K. P. et al. | 1991
- 8210
-
Temperature and illumination intensity dependence of photoconductivity in sputter‐deposited heteroepitaxial (100)CdTe layersDas, S. R. / Cook, J. G. / Mukherjee, G. et al. | 1991
- 8217
-
Capacitance‐voltage characteristics of grain boundaries in cast polycrystalline siliconSuresh, P. R. / Ramkumar, K. / Satyam, M. et al. | 1991
- 8222
-
Thermally stimulated current studies of sille´nite‐type oxide crystals: Retrapping kinetics and identity of trapped carriersTakamori, Takeshi et al. | 1991
- 8227
-
Extremely low non-alloyed specific contact resistance rhoc (10-8 Ohm.cm2) to metalorganic molecular beam epitaxy grown super heavily C-doped (1021 cm3) p(++) GaAsUsagawa, T. / Kobayashi, M. / Mishima, T. / Rabinzohn, P.D. / Ihara, A. / Kawata, M. / Yamada, T. / Tokumitsu, E. / Konagai, M. / Takahashi, K. et al. | 1991
- 8227
-
Extremely low non‐alloyed specific contact resistance ρc (10−8 Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C‐doped (1021 cm−3) p++GaAsUsagawa, T. / Kobayashi, M. / Mishima, T. / Rabinzohn, P. D. / Ihara, A. / Kawata, M. / Yamada, T. / Tokumitsu, E. / Konagai, M. / Takahashi, K. et al. | 1991
- 8233
-
Analysis of charge control in Si delta‐doped field‐effect transistorChen, Qiang / Willander, Magnus et al. | 1991
- 8237
-
Frequency dependence of drift mobility in a‐Si:H measured by traveling‐wave methodKaneko, Y. / Fritzsche, H. et al. | 1991
- 8241
-
Uniaxial stress effects on the AlAs/GaAs double‐barrier heterostructuresLu, S. S. / Meng, C. C. / Williamson, F. / Nathan, M. I. et al. | 1991
- 8247
-
Post‐growth process‐induced degradation in thin gate oxidesMehta, Rajesh / Bhattacharyya, A. B. / Singh, D. N. et al. | 1991
- 8253
-
The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au‐contacted III‐V semiconductorsWeizer, Victor G. / Fatemi, Navid S. et al. | 1991
- 8261
-
Very high critical current in a long YBa2Cu3O7−δ single crystalline rodAguillon, C. / McCartney, D. G. / Regnier, P. / Senoussi, S. / Tatlock, G. J. et al. | 1991
- 8265
-
Influence of the sample geometry on critical current density of high Tc granular superconductorsD’Ovidio, Claudio A. / Fiscina, Jorge E. / Esparza, Daniel A. et al. | 1991
- 8268
-
The effects of processing sequences on the microwave surface resistance of TlCaBaCuOMartens, J. S. / Zipperian, T. E. / Ginley, D. S. / Hietala, V. M. / Tigges, C. P. / Plut, T. A. et al. | 1991
- 8272
-
Spectroscopic ellipsometry studies of YBa2Cu3O7−δ deposited on SrTiO3Sengupta, L. C. / Huang, D. / Roughani, B. / Aubel, J. L. / Sundaram, S. / Chang, C. L. et al. | 1991
- 8272
-
Spectroscopic ellipsometry studies of YBa2Cu3O(7-delta) deposited on SrTiO3Sengupta, L.C. / Huang, D. / Roughani, B. / Aubel, J.L. / Sundaram, S. / Chang, C.L. et al. | 1991
- 8277
-
An experimental system for studying dynamic behavior of magnetic microparticlesHelgesen, G. / Skjeltorp, A. T. et al. | 1991
- 8285
-
Soft magnetic properties and film structures of Fe‐C/Ta multilayered filmsKobayashi, Toshio / Nakamura, Hitoshi / Nakatani, Ryoichi et al. | 1991
- 8291
-
Modification of aggregate formation in arachidic‐acid–cyanine‐dye complex Langmuir–Blodgett films by substituent groupsSaito, Kazuhiro / Ikegami, Keiichi / Kuroda, Shin‐ichi / Saito, Mitsuyoshi / Tabe, Yuka / Sugi, Michio et al. | 1991
- 8298
-
Photoreflectance line shapes of semiconductor microstructuresTang, Y. S. et al. | 1991
- 8304
-
Characterization of epitaxial thin GaP films on GaAs by Raman scatteringMizoguchi, Kohji / Nakashima, Shin‐ichi / Takamori, Akira et al. | 1991
- 8310
-
Determination of very thin semiconductor layer thickness by a photothermal methodYacoubi, N. / Alibert, C. et al. | 1991
- 8310
-
Determination of very thin semiconductor layer thickness by a phototermal methodYacoubi, N. / Alibert, C. et al. | 1991
- 8313
-
Low‐temperature epitaxial growth of cerium dioxide layers on (111) silicon substratesInoue, T. / Osonoe, M. / Tohda, H. / Hiramatsu, M. / Yamamoto, Y. / Yamanaka, A. / Nakayama, T. et al. | 1991
- 8316
-
Epitaxial growth of GaAs films from elemental arsenicChu, Shirley S. / Chu, T. L. / Green, R. F. / Cerny, C. et al. | 1991
- 8420
-
Zn drops at a Si surface measured by the refracted x‐ray fluorescence methodSasaki, Y. C. / Kisimoto, M. / Nagata, S. / Yamaguchi, S. / Hirokawa, K. et al. | 1991
- 8320
-
The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon filmsKunst, M. / Neitzert, H.‐C. et al. | 1991
- 8329
-
The growth kinetics of diamond films deposited by hot‐filament chemical vapor depositionKweon, Dae‐Weon / Lee, Jai‐Young / Kim, Dongho et al. | 1991
- 8336
-
Modeling of epitaxial silicon growth from the SiH2Cl2‐H2‐HCl system in an rf‐heated pancake reactorOh, In‐Hwan / Takoudis, Christos G. et al. | 1991
- 8346
-
Facet oxidation of InGaAs/GaAs strained quantum‐well lasersOkayasu, Masanobu / Fukuda, Mitsuo / Takeshita, Tatsuya / Uehara, Shingo / Kurumada, Katsuhiko et al. | 1991
- 8352
-
Preparation and electrical properties of MOCVD‐deposited PZT thin filmsSakashita, Yukio / Ono, Toshiyuki / Segawa, Hideo / Tominaga, Kouji / Okada, Masaru et al. | 1991
- 8358
-
Growth of ceramic thin films on Si(100) using an in situ laser deposition techniqueTiwari, P. / Sharan, S. / Narayan, J. et al. | 1991
- 8363
-
Grain growth processes in ZnO varistors with various valence states of manganese and cobaltChen, Ying‐Chung / Shen, Chi‐Yen / Wu, Long et al. | 1991
- 8368
-
Study on the sensing mechanism of tin oxide flammable gas sensors using the Hall effectIppommatsu, Masamichi / Ohnishi, Hisao / Sasaki, Hirokazu / Matsumoto, Takeshi et al. | 1991
- 8375
-
Modeling and optimization of high‐Tc superconducting bolometers: The effect of film thicknessNeff, H. et al. | 1991
- 8380
-
Characterization of ZnO varistor degradation using lifetime positron‐annihilation spectroscopyRamanachalam, M. S. / Rohatgi, A. / Schaffer, J. P. / Gupta, T. K. et al. | 1991
- 8387
-
Resonant level lifetime in GaAs-AlAs double-barrier structures including Gamma-Chi mixingZheng, T.F. / Cai, W. / Hu, P. / Lax, M. / Shum, K. / Alfano, R.R. et al. | 1991
- 8387
-
Resonant level lifetime in GaAs‐AlAs double‐barrier structures including Γ‐X mixingZheng, T. F. / Cai, W. / Hu, P. / Lax, M. / Shum, Kai / Alfano, R. R. et al. | 1991
- 8392
-
High‐speed photodetectors on InGaAs/GaAs‐on‐GaAs superlatticesZirngibl, M. / Ilegems, M. et al. | 1991
- 8399
-
Influence of thickness and conductivity of alignment layers on the bistability of ferroelectric liquid‐crystal devicesChieu, T. C. et al. | 1991
- 8402
-
Raman investigations of the surface modes of the crystallites in CdS thin films grown by pulsed laser and thermal evaporationChuu, D. S. / Dai, C. M. / Hsieh, W. F. / Tsai, C. T. et al. | 1991
- 8405
-
Diffraction by a half‐plane in a lossy mediuma)Hill, David A. et al. | 1991
- 8408
-
Metal‐oxide semiconductor transistors fabricated on Si/Al2O3/Si structuresIshida, M. / Yamaguchi, S. / Masa, Y. / Nakamura, T. / Hikita, Y. et al. | 1991
- 8411
-
A comparison of deposition rates and temperature measurements for dc and rf diode sputteringManiv, S. et al. | 1991
- 8414
-
Effective mass for strained p‐type Si1−xGexManku, T. / Nathan, A. et al. | 1991
- 8417
-
Structural study of tin and carbon coimplanted siliconMei, P. / Schmidt, M. T. / Yang, E. S. / Wilkens, B. J. et al. | 1991
- 8423
-
Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on beta-SiCSherwin, M.E. / Drummond, T.J. et al. | 1991
- 8423
-
Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β‐SiCSherwin, M. E. / Drummond, T. J. et al. | 1991
- 8426
-
Effect of zinc diffusion on impurity profiles of carbon‐ and beryllium‐doped thin GaAs layers grown by chemical beam epitaxyTokumitsu, E. / Chiu, T. H. / Luftman, H. S. / Ha, N. T. et al. | 1991
- 8429
-
Erratum: ‘‘Suppression of the emitter size effect on the current gain of AlGaAs/GaAs heterojunction bipolar transistor by utilizing (NH4)2Sx treatment’’ [J. Appl. Phys. 69, 2717 (1991)]Shikata, S. / Okada, H. / Hayashi, H. et al. | 1991