Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces (English)
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- New search for: Hirayama, Hideki
- New search for: Tanaka, Satoru
- New search for: Ramvall, Peter
- New search for: Aoyagi, Yoshinobu
- New search for: Hirayama, Hideki
- New search for: Tanaka, Satoru
- New search for: Ramvall, Peter
- New search for: Aoyagi, Yoshinobu
In:
Applied Physics Letters
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72
, 14
;
1736-1738
;
1998
- Article (Journal) / Electronic Resource
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Title:Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
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Contributors:Hirayama, Hideki ( author ) / Tanaka, Satoru ( author ) / Ramvall, Peter ( author ) / Aoyagi, Yoshinobu ( author )
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Published in:Applied Physics Letters ; 72, 14 ; 1736-1738
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Publisher:
- New search for: American Institute of Physics
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Publication date:1998-04-06
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 72, Issue 14
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1667
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The investigation of the relaxation processes in antiferroelectric liquid crystals by electro-optic spectroscopyPanarin, Yu. P. / Kalinovskaya, O. / Vij, J. K. et al. | 1998
- 1670
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Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dotsGraham, L. A. / Huffaker, D. L. / Deng, Q. / Deppe, D. G. et al. | 1998
- 1673
-
A low pressure mercury vapor resonance ionization image detectorMatveev, O. I. / Smith, B. W. / Winefordner, J. D. et al. | 1998
- 1676
-
Transmissive properties of Ag/MgF2 photonic band gapsBloemer, Mark J. / Scalora, Michael et al. | 1998
- 1679
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Thermally stable high-gain photorefractive polymer composites based on a tri-functional chromophoreHendrickx, E. / Herlocker, J. / Maldonado, J. L. / Marder, S. R. / Kippelen, B. / Persoons, A. / Peyghambarian, N. et al. | 1998
- 1682
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How good is the polarization selection rule for intersubband transitions?Liu, H. C. / Buchanan, M. / Wasilewski, Z. R. et al. | 1998
- 1685
-
Effect of external electric field on the growth of nanotubulesSrivastava, Anchal / Srivastava, A. K. / Srivastava, O. N. et al. | 1998
- 1688
-
Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxyGuan, Z. P. / Kuang, G. K. / Griebl, E. / Kastner, M. / Gebhardt, W. et al. | 1998
- 1691
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Equation of state of wurtzitic boron nitride to 66 GPaSolozhenko, Vladimir L. / Ha¨usermann, Daniel / Mezouar, Mohamed / Kunz, Martin et al. | 1998
- 1694
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Arsenic incorporation in HgCdTe grown by molecular beam epitaxyWijewarnasuriya, P. S. / Sivananthan, S. et al. | 1998
- 1697
-
Local determination of the stacking sequence of layered materialsFompeyrine, J. / Berger, R. / Lang, H. P. / Perret, J. / Ma¨chler, E. / Gerber, Ch. / Locquet, J.-P. et al. | 1998
- 1700
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Optical and electrical properties of aluminum oxide films deposited by spray pyrolysisAguilar-Frutis, M. / Garcia, M. / Falcony, C. et al. | 1998
- 1703
-
Hydrogen-decorated lattice defects in proton implanted GaNWeinstein, Marcie G. / Song, C. Y. / Stavola, Michael / Pearton, S. J. / Wilson, R. G. / Shul, R. J. / Killeen, K. P. / Ludowise, M. J. et al. | 1998
- 1706
-
A model of bonding and band-forming for oxides and nitridesSun, Chang Q. et al. | 1998
- 1709
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Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusionChang, R. D. / Choi, P. S. / Kwong, D. L. / Wristers, D. / Chu, P. K. et al. | 1998
- 1712
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Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dotsNeves, B. R. A. / Andrade, M. S. / Rodrigues, W. N. / Sa´far, G. A. M. / Moreira, M. V. B. / de Oliveira, A. G. et al. | 1998
- 1715
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Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnaceMiyata, Noriyuki / Watanabe, Heiji / Ichikawa, Masakazu et al. | 1998
- 1718
-
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishingCurrie, M. T. / Samavedam, S. B. / Langdo, T. A. / Leitz, C. W. / Fitzgerald, E. A. et al. | 1998
- 1721
-
Electrical and physical characterization of deuterium sinter on submicron devicesMogul, H. C. / Cong, L. / Wallace, R. M. / Chen, P. J. / Rost, T. A. / Harvey, K. et al. | 1998
- 1724
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Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devicesOverend, N. / Nogaret, A. / Gallagher, B. L. / Main, P. C. / Henini, M. / Marrows, C. H. / Howson, M. A. / Beaumont, S. P. et al. | 1998
- 1727
-
Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopyChen, Huajie / Feenstra, R. M. / Goldman, R. S. / Silfvenius, C. / Landgren, G. et al. | 1998
- 1730
-
Phase separation in InGaN/GaN multiple quantum wellsMcCluskey, M. D. / Romano, L. T. / Krusor, B. S. / Bour, D. P. / Johnson, N. M. / Brennan, S. et al. | 1998
- 1733
-
Acoustically driven bound exciton lifetimes in CdS crystalsKorotchenkov, O. A. / Goto, T. et al. | 1998
- 1736
-
Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfacesHirayama, Hideki / Tanaka, Satoru / Ramvall, Peter / Aoyagi, Yoshinobu et al. | 1998
- 1739
-
Inhomogeneous strain in individual quantum dots probed by transport measurementsAkyu¨z, C. D. / Zaslavsky, A. / Freund, L. B. / Syphers, D. A. / Sedgwick, T. O. et al. | 1998
- 1742
-
Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxyRuterana, P. / Nouet, G. / Van der Stricht, W. / Moerman, I. / Considine, L. et al. | 1998
- 1745
-
Two-dimensional electron gas formed in a back-gated undoped heterostructureHirayama, Y. / Muraki, K. / Saku, T. et al. | 1998
- 1748
-
p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor depositionSugiura, Lisa / Suzuki, Mariko / Nishio, Johji et al. | 1998
- 1751
-
Enhancement of acoustic- and optic-phonon generation by terahertz radiations in a two-dimensional electron systemLei, X. L. / Dong, B. et al. | 1998
- 1754
-
Spectral shifts associated with dark line defects in degraded II-VI laser diodesChao, L.-L. / Cargill, G. S. / Marshall, T. / Snoeks, E. / Petruzzello, J. / Pashley, M. et al. | 1998
- 1757
-
Mixing effect of chelate complex and metal in organic light-emitting diodesLee, Jae-Gyoung / Kim, Youngkyoo / Jang, Sei-Hum / Kwon, Soon-Nam / Jeong, Kwangho et al. | 1998
- 1760
-
A probe for the investigation of the superconducting metastable state in YBa2Cu3O7−x step-edge junctionsBarbanera, S. / Castellano, M. G. / Torrioli, G. / Cirillo, M. et al. | 1998
- 1763
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Superconducting YBa2Cu3O7−x thin films on polycrystalline ferrite for magnetically tunable microwave componentsJia, Q. X. / Findikoglu, A. T. / Arendt, P. / Foltyn, S. R. / Roper, J. M. / Groves, J. R. / Coulter, J. Y. / Li, Y. Q. / Dionne, G. F. et al. | 1998
- 1766
-
Minimization of detrimental effect of air in HgBa2CaCu2O6+δ thin film processingKang, B. W. / Gapud, A. A. / Fei, X. / Aytug, T. / Wu, J. Z. et al. | 1998
- 1766
-
Minimization of detrimental effect of air in HgBa2CaCu2O6+d thin film processingKang, B.W. et al. | 1998
- 1769
-
Proximity effect in bilayer films of YBa2Cu2.7Fe0.3Oy and YBa2Cu3O7-dNesher, O. et al. | 1998
- 1769
-
Proximity effect in bilayer films of YBa2Cu2.7Fe0.3Oy and YBa2Cu3O7−δNesher, O. / Koren, G. / Polturak, E. / Deutscher, G. et al. | 1998
- 1772
-
Nonlinear I–V characteristics and proximity effects for PrBa2Cu3O7−δ/YBa2Cu3O7−δ bilayered structures grown on (001) YBa2Cu3O7−δ single crystal substratesUsagawa, Toshiyuki / Ishimaru, Yoshihiro / Wen, Jianguo / Utagawa, Tadashi / Koyama, Satoshi / Enomoto, Youichi et al. | 1998
- 1772
-
Nonlinear I-V characteristics and proximity effects for PrBa2Cu3O7-d-YBa2Cu3O7-d bilayered structures grown on (001) YBa2Cu3O7-d single crystal substratesUsagawa, Toshiyuki et al. | 1998
- 1775
-
Magnetoelastic coupling and magnetic anisotropy in La0.67Ca0.33MnO3 filmsO’Donnell, J. / Rzchowski, M. S. / Eckstein, J. N. / Bozovic, I. et al. | 1998
- 1778
-
Quantitative topographic imaging using a near-field scanning microwave microscopeVlahacos, C. P. / Steinhauer, D. E. / Dutta, S. K. / Feenstra, B. J. / Anlage, Steven M. / Wellstood, F. C. et al. | 1998
- 1781
-
Alkanethiol self-assembled monolayers as the dielectric of capacitors with nanoscale thicknessRampi, Maria A. / Schueller, Olivier J. A. / Whitesides, George M. et al. | 1998
- 1784
-
Capacitance–voltage characteristics of Bi4Ti3O12/p-Si interfaceFu, Liwei / Liu, Kun / Zhang, Bo / Chu, Junhao / Wang, Hong / Wang, Min et al. | 1998
- 1787
-
Sr0.8Bi2.5Ta1.2Nb0.9O9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputteringTsai, Huei-Mei / Lin, Pang / Tseng, Tseung-Yuen et al. | 1998
- 1790
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CUMULATIVE AUTHOR INDEX| 1998