Effects of carrier and dispersion on propagation of a directed electromagnetic pulse (English)
National licence
- New search for: Hafizi, B.
- New search for: Hafizi, B.
In:
Journal of Applied Physics
;
73
, 2
;
513-521
;
1993
- Article (Journal) / Electronic Resource
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Title:Effects of carrier and dispersion on propagation of a directed electromagnetic pulse
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Contributors:Hafizi, B. ( author )
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Published in:Journal of Applied Physics ; 73, 2 ; 513-521
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Publisher:
- New search for: American Institute of Physics
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Publication date:1993-01-15
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 73, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 489
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A novel switchable glazing formed by electrically induced chains of suspensionsTada, Hiroaki / Saito, Yasuhiro / Hirata, Masahiro / Hyodo, Masato / Kawahara, Hideo et al. | 1993
- 494
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Electronic structure of double‐layer graphene tubulesSaito, Riichiro / Dresselhaus, G. / Dresselhaus, M. S. et al. | 1993
- 501
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Theory of eddy current inversionNorton, Stephen J. / Bowler, John R. et al. | 1993
- 513
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Effects of carrier and dispersion on propagation of a directed electromagnetic pulseHafizi, B. et al. | 1993
- 522
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Desorption spectra of laser ablation of Tl‐Ca‐Ba‐Cu‐O superconductorsChen, C. H. / Phillips, R. C. / McCann, M. P. et al. | 1993
- 526
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Axial strain‐induced microbending losses in double‐coated optical fibersShiue, Sham‐Tsong et al. | 1993
- 530
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Ultrashort‐pulse propagation in dye laser amplifiersJiang, Shuanghua / Casperson, Lee W. et al. | 1993
- 541
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Effects of scattering on the dynamics of holographic recording and erasure in photorefractive lithium niobateManiloff, Eric S. / Johnson, Kristina M. et al. | 1993
- 548
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Thin film devices based on second order Bragg interactionKasraian, Masoud / Seshadri, S. R. et al. | 1993
- 566
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Surface roughness and the ultrasonic detection of subsurface scatterersNagy, Peter B. / Rose, James H. et al. | 1993
- 581
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Thermal and electrical conductivity of monolithic carbon aerogelsLu, Xianping / Nilsson, Ove / Fricke, Jochen / Pekala, Richard W. et al. | 1993
- 585
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The effects of gas phase convection on mass transfer in spin coatingBornside, David E. / Brown, Robert A. / Ackmann, Paul W. / Frank, John R. / Tryba, Anthony A. / Geyling, Franz T. et al. | 1993
- 601
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Evaluation of crystal diffractor parameters for curved diffractorsWittry, D. B. / Chang, W. Z. et al. | 1993
- 608
-
Transmission electron microscopy study of heavily delta‐doped GaAs grown by molecular beam epitaxyLiu, D. G. / Fan, J. C. / Lee, C. P. / Chang, K. H. / Liou, D. C. et al. | 1993
- 615
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Thermal conversion of semi‐insulating GaAs in high‐temperature annealingOhkubo, N. / Shishikura, M. / Matsumoto, S. et al. | 1993
- 619
-
Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systemsZou, J. / Cockayne, D. J. H. / Usher, B. F. et al. | 1993
- 627
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Extrinsic recombination processes in proton irradiated InAs/GaAs heterostructures grown by molecular beam epitaxyVodopyanov, K. L. / Graener, H. / Phillips, C. C. / Tate, T. J. et al. | 1993
- 633
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The lattice locations of silicon atoms in delta‐doped layers in GaAsAshwin, M. J. / Fahy, M. / Harris, J. J. / Newman, R. C. / Sansom, D. A. / Addinall, R. / McPhail, D. S. / Sharma, V. K. M. et al. | 1993
- 633
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The lattice locations of silicon atoms in delta-doped layers in GaAs2100019Ashwin, M.J. / Fahy, M. / Harris, J.J. / Newman, R.C. / Sansom, D.A. / Addinall, R. / McPhail, D.S. / Sharma, V.K.M. et al. | 1993
- 640
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Characterization of deep‐level defects in GaAs irradiated by 1 MeV electronsLai, S. T. / Nener, B. D. / Faraone, L. / Nassibian, A. G. / Hotchkis, M. A. C. et al. | 1993
- 648
-
A positron annihilation study of defects in neutron transmutation‐doped float‐zone (Ar)‐SiPuff, Werner / Meng, Xiang‐ti et al. | 1993
- 652
-
Atomic structure and defects in decagonal quasicrystals of Al62Cu20Co15Si3Zhang, Z. / Li, N. C. / Williams, D. B. et al. | 1993
- 658
-
Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistorsStahlbush, R. E. / Edwards, A. H. / Griscom, D. L. / Mrstik, B. J. et al. | 1993
- 668
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Effects of thin, semi‐rigid coatings on the adhesion‐induced deformations between rigid particles and soft substratesRimai, D. S. / DeMejo, L. P. / Vreeland, W. B. / Bowen, R. C. / Gaboury, S. R. / Urban, M. W. et al. | 1993
- 673
-
Strength of titanium diboride under shock wave loadingDandekar, Dattatraya P. / Benfanti, Daniel C. et al. | 1993
- 680
-
The metal‐particle/insulating oil system: An ideal electrorheological fluidDavis, L. C. et al. | 1993
- 684
-
Photoacoustic investigation of the thermal properties of layered materials: Calculation of the forward signal and numerical inversion procedureGlorieux, C. / Fivez, J. / Thoen, J. et al. | 1993
- 691
-
Heavy doping effects in the diffusion of group IV and V impurities in siliconLarsen, A. Nylandsted / Larsen, K. Kyllesbech / Andersen, P. E. / Svensson, B. G. et al. | 1993
- 699
-
Diffusion of P in a novel three‐dimensional device based on Si–TaSi2 eutecticPelleg, Joshua / Ditchek, Brian M. et al. | 1993
- 707
-
Hydrogen enhanced out‐diffusion of oxygen in Czochralski siliconZhong, L. / Shimura, F. et al. | 1993
- 711
-
Orientation relationship between chemical vapor deposited diamond and graphite substratesLi, Zhidan / Wang, Long / Suzuki, Tetsuya / Argoitia, Alberto / Pirouz, Pirouz / Angus, John C. et al. | 1993
- 716
-
Mechanisms of atomic layer epitaxy of GaAsYu, Ming L. et al. | 1993
- 726
-
Growth mechanism of 6H‐SiC in step‐controlled epitaxyKimoto, Tsunenobu / Nishino, Hironori / Yoo, Woo Sik / Matsunami, Hiroyuki et al. | 1993
- 733
-
Structural control of nonequilibrium WSi2.6 thin films by external stressFujimura, Norifumi / Tachibana, Shoji / Ito, Taichiro / Hosokawa, Norio et al. | 1993
- 740
-
Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1−xAs quantum wellsLord, S. M. / Roos, G. / Harris, J. S. / Johnson, N. M. et al. | 1993
- 749
-
Evidence for Pd bonding with Si intermediate oxidation statesFaraci, G. / La Rosa, S. / Pennisi, A. R. / Hwu, Y. / Lozzi, L. / Margaritondo, G. et al. | 1993
- 755
-
Studies of turbulent oxyacetylene flames used for diamond growthMarks, C. M. / Burris, H. R. / Grun, J. / Snail, K. A. et al. | 1993
- 760
-
A new technique to decompose closely spaced interface and bulk trap states using temperature dependent pulse‐width deep level transient spectroscopy method: An application to PT/CdS photodetectorWang, C. W. / Wu, C. H. / Boone, J. L. et al. | 1993
- 767
-
A Tougaard background deconvolution study of the compositional depth profile in amorphous a‐Si1−xCx:H alloysSastry, Murali / Sainkar, S. R. et al. | 1993
- 771
-
Field effect on thermal emission from the 0.40 eV electron level in InGaPZhu, Q. S. / Hiramatsu, K. / Sawaki, N. / Akasaki, I. / Liu, X. N. et al. | 1993
- 775
-
Thermomagnetic annealing of soft amorphous metallic alloys monitored by in situ resistance and magnetoresistance measurementsGerard, P. / Suran, G. et al. | 1993
- 782
-
Preparation and properties of electrodeposited indium tin oxide/SnO2/CdTe and indium tin oxide/SnO2/CdS/CdTe solar cellsDas, S. K. / Morris, G. C. et al. | 1993
- 787
-
Electron transport in N,N’‐bis(2‐phenethyl)‐perylene‐3,4: 9,10‐bis(dicarboximide)Magin, Edward H. / Borsenberger, Paul M. et al. | 1993
- 792
-
Charge density excitations of two‐dimensional magnetoplasma in semiconductor superlatticesKushwaha, Manvir S. et al. | 1993
- 804
-
Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate lengthDollfus, P. / Bru, C. / Hesto, P. et al. | 1993
- 813
-
Electromigration‐induced compressive stresses in encapsulated thin‐film conductors with and without the presence of drift velocityHemmert, R. S. / Shatzkes, M. et al. | 1993
- 820
-
The effect of the planar doping on the electrical transport properties at the Al:n‐GaAs(100) interface: Ultrahigh effective dopingGeraldo, J. M. / Rodrigues, W. N. / Medeiros‐Ribeiro, G. / de Oliveira, A. G. et al. | 1993
- 824
-
A macroscopic time dependent electrical conduction model for thin phosphosilicate glass filmsPopa, O. / Cobianu, C. et al. | 1993
- 829
-
Equivalent circuit and capacitance of double barrier resonant tunneling diodeWei, T. / Stapleton, S. / Berolo, E. et al. | 1993
- 835
-
Effect of surface hydrogen on metal‐diamond interface propertiesTachibana, T. / Glass, J. T. / Nemanich, R. J. et al. | 1993
- 843
-
The role of high‐pressure sintering in preparing high‐quality n‐type Nd2−xCexCuO4−y superconductorsJin, C. Q. / Zhou, W. L. / Gu, H. / Yao, Y. S. / Wang, W. K. et al. | 1993
- 850
-
Thermal boundary resistance and diffusivity measurements on thin YBa2Cu3O7−x films with MgO and SrTiO3 substrates using the transient grating methodMarshall, C. D. / Tokmakoff, A. / Fishman, I. M. / Eom, C. B. / Phillips, Julia M. / Fayer, M. D. et al. | 1993
- 858
-
Soft magnetic properties of Fe multilayered films with amorphous intermediate layersKobayashi, Toshio et al. | 1993
- 865
-
Effects of melt temperature on the magnetic properties of FeCuNbSiB alloyLim, S. H. / Pi, W. K. / Noh, T. H. / Kim, H. J. / Kang, I. K. et al. | 1993
- 871
-
Magnetomechanical damping in FeSiB amorphous wiresAtalay, S. / Squire, P. T. et al. | 1993
- 876
-
Electron spin resonance characterization and localization of a thermally generated donor inherent to the separation by implantation of oxygen processVanheusden, K. / Stesmans, A. et al. | 1993
- 890
-
Correlation of optical and dielectrical properties of water trees in polyetyleneViard Jerome et al. | 1993
- 890
-
Correlation of optical and dielectric properties of water trees in polyethyleneViard, Je´roˆme et al. | 1993
- 898
-
Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxyRinaldi, R. / Cingolani, R. / Ferrara, M. / Tapfer, L. / Ku¨nzel, H. / Hase, A. et al. | 1993
- 905
-
Numerical calculation of flow orientation effects in the Langmuir–Blodgett deposition processTabe, Yuka / Ikegami, Keiichi / Sugi, Michio et al. | 1993
- 914
-
Optical properties of μc‐Si:H/α‐Si:H layered structures: Influence of the hydrogen bonds, crystallite size, and thicknessBoultadakis, S. / Logothetidis, S. / Ves, S. / Kircher, J. et al. | 1993
- 914
-
Optical properties of mc-Si:H-a-Si:H layered structures: Influence of the hydrogen bonds, crystallite size, and thicknessBoultadakis, S. et al. | 1993
- 926
-
Optical properties of ZnTeSato, Kohzo / Adachi, Sadao et al. | 1993
- 932
-
Improvement in electroabsorption and the effects of parameter variations in the three‐step asymmetric coupled quantum wellSusa, Nobuhiko et al. | 1993
- 943
-
Optical properties of the dominant Nd center in GaPTaniguchi, Moriyuki / Takahei, Kenichiro et al. | 1993
- 948
-
Characterization of He/CH4 dc glow discharge plasmas by optical emission spectroscopy, mass spectrometry, and actinometryde la Cal, E. / Tafalla, D. / Tabares, F. L. et al. | 1993
- 955
-
A study of point defect detectors created by Si and Ge implantationMeng, H. L. / Prussin, S. / Law, M. E. / Jones, K. S. et al. | 1993
- 961
-
The processes of formation and epitaxial alignment of SrTiO3 thin films prepared by metallo‐organic decompositionBraunstein, G. / Paz‐Pujalt, G. R. / Mason, M. G. / Blanton, T. / Barnes, C. L. / Margevich, D. et al. | 1993
- 971
-
Formation of 250‐μm‐diameter diamond crystals by combustion flame method: Effects of preformation of molybdenum oxide on the substrateAbe, Toshimi / Suemitsu, Maki / Miyamoto, Nobuo / Sato, Noriyoshi et al. | 1993
- 971
-
Formation of 250-mm-diameter diamond crystals by combustion flame method: Effects of preformation of molybdenum oxide on the substrateAbe, Toshimi et al. | 1993
- 971
-
Formation of 250-micrometer-diameter diamond crystals by combustion flame method: Effects of preformation of molybdenum oxide on the substrateAbe, Toshimi / Suemitsu, Maki / Miyamoto, Nobuo / Sato, Noriyoshi et al. | 1993
- 977
-
Mechanical properties of Al and Al alloys and their relationship to interconnection reliabilityOzawa, Kiyoshi et al. | 1993
- 986
-
The magneto‐optical Kerr effect of multilayers Fe/Pt and Co/PtZhou, Shiming / Zhai, Hongru / Song, Jingtao / Zhang, Hongyan et al. | 1993
- 989
-
Resonant level lifetime in the double‐barrier structure for both quasi‐bound and extended statesPeng, Jian‐Ping / Mu, Yao‐Ming / Shen, Xue‐Chu et al. | 1993
- 992
-
New optical absorption lines in heat‐treated gallium arsenideSuezawa, Masashi / Sumino, Koji et al. | 1993
- 995
-
Photon assisted reduction of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayersRuzin, A. / Bezinger, A. / Nemirovsky, Y. et al. | 1993
- 998
-
Time‐evolved numerical simulation of a two‐dimensional electron wave packet through a quantum double slitEndoh, Akira / Sasa, Shigehiko / Arimoto, Hiroshi / Muto, Shunichi et al. | 1993
- 1001
-
Measurements of electron density, decay time, and floating potential in methane dischargesSnyder, H. R. / Fleddermann, C. B. et al. | 1993
- 1004
-
Oxygen distribution in a thin epitaxial silicon layerWijaranakula, W. et al. | 1993
- 1007
-
Comment on ‘‘Application of low‐temperature ions in the nonequilibrium state plasma of a Penning source’’ [J. Appl. Phys. 69, 7933 (1991)]Hopkins, M. B. et al. | 1993
- 1008
-
Reply to ‘‘Comment on ‘Application of low‐temperature ions in the nonequilibrium state plasma of a Penning source’ ’’ [J. Appl. Phys. 69, 7933 (1991)]Sato, Yukio et al. | 1993
- 1009
-
CUMULATIVE AUTHOR INDEX| 1993