Optical characterization of strained InGaAsN/GaAs multiple quantum wells (English)
- New search for: Héroux, J. B.
- New search for: Yang, X.
- New search for: Wang, W. I.
- New search for: Héroux, J. B.
- New search for: Yang, X.
- New search for: Wang, W. I.
In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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20
, 3
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1154-1157
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2002
- Article (Journal) / Electronic Resource
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Title:Optical characterization of strained InGaAsN/GaAs multiple quantum wells
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Contributors:
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:2002-05-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 20, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 757
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Theory of nanotip formationBilbro, Griff L. et al. | 2002
- 762
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Three-dimensional site control of self-organized InAs quantum dots by in situ scanning tunneling probe-assisted nanolithography and molecular beam epitaxyKohmoto, S. / Nakamura, H. / Nishikawa, S. / Asakawa, K. et al. | 2002
- 766
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Morphological evolution and surface and interface structure of aluminum on polyimideLin, Xue-Feng / Grove, David A. / Wei, Lun-Cun / Strossman, Greg S. / Lefever-Button, Glenn / Kingsley, Jeffrey R. et al. | 2002
- 776
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Effect of polishing pretreatment on the fabrication of ordered nanopore arrays on aluminum foils by anodizationWu, M. T. / Leu, I. C. / Hon, M. H. et al. | 2002
- 783
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Scanning capacitance microscopy measurements using diamond-coated probesYabuhara, Hidehiko / Ciappa, Mauro / Fichtner, Wolfgang et al. | 2002
- 787
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Field electron emission device using silicon nanoprotrusionsSawada, Kazuaki / Tabe, Michiharu / Ishikawa, Yasuhiko / Ishida, Makoto et al. | 2002
- 791
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Importance of fluorine surface diffusion for plasma etching of siliconVerdonck, P. / Goodyear, A. / Mansano, R. D. / Barroy, P. R. J. / St. J. Braithwaite, N. et al. | 2002
- 797
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Advanced transfer system for spin coating film transfer and hot-pressing in planarization technologySato, Norio / Machida, Katsuyuki / Kudou, Kazuhisa / Yano, Masaki / Kyuragi, Hakaru et al. | 2002
- 802
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Carbon nanotube films grown by laser-assisted chemical vapor depositionRohmund, F. / Morjan, R.-E. / Ledoux, G. / Huisken, F. / Alexandrescu, R. et al. | 2002
- 812
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Quantum transport through one-dimensional aluminum wiresBatra, Inder P. / Sen, Prasenjit / Ciraci, S. et al. | 2002
- 818
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Spatially selective single-grain silicon films induced by hydrogen plasma seedingBo, Xiang-Zheng / Yao, Nan / Wagner, Sigurd / Sturm, J. C. et al. | 2002
- 822
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Atomic force microscopy using single-wall C nanotube probesSnow, E. S. / Campbell, P. M. / Novak, J. P. et al. | 2002
- 828
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Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technologyLu, Hongqiang / Cui, Hao / Bhat, Ishwara / Murarka, Shyam / Lanford, Williams / Hsia, Wei-Jen / Li, Weidan et al. | 2002
- 834
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Comparative study on alloy cluster formation in Co-Al and Co-Pt systemsKonno, Toyohiko J. / Yamamuro, Saeki / Sumiyama, Kenji et al. | 2002
- 843
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Selective etching of Al/AlN structures for metallization of surface acoustic wave devicesEngelmark, F. / Iriarte, G. F. / Katardjiev, I. V. et al. | 2002
- 849
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Electron-beam double resist process to enhance bright field pattern resolutionChan, Victor W. C. / Chan, Philip C. H. et al. | 2002
- 855
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Simulation and dielectric characterization of reactive dc magnetron cosputtered thin filmsWestlinder, J. / Zhang, Y. / Engelmark, F. / Possnert, G. / Blom, H.-O. / Olsson, J. / Berg, S. et al. | 2002
- 862
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Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurementsLegrand, B. / Deresmes, D. / Stiévenard, D. et al. | 2002
- 871
-
Thin-film resistor fabrication for InP technology applicationsKopf, R. F. / Melendes, R. / Jacobson, D. C. / Tate, A. / Melendes, M. A. / Reyes, R. R. / Hamm, R. A. / Yang, Y. / Frackoviak, J. / Weimann, N. G. et al. | 2002
- 876
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Protection of structures during lateral oxidation using an amorphous InGaP layerPickrell, G. W. / Chang, K. L. / Epple, J. H. / Cheng, K. Y. / Hsieh, K. C. et al. | 2002
- 880
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Thermal stability of multilayer structures improved by cavity formationAlberti, A. / La Via, F. / Ravesi, S. et al. | 2002
- 885
-
Inverse electronic scattering from shifted projections within the Fresnel-Kirchhoff formalismMayer, A. et al. | 2002
- 891
-
Development of a data-driven dynamic model for a plasma etching reactorZhang, Haiyang / Nikolaou, Michael / Peng, Ying et al. | 2002
- 902
-
Deep etch of GaP using high-density plasma for light-emitting diode applicationsWuu, D. S. / Chung, C. R. / Liu, Y. H. / Horng, R. H. / Huang, S. H. et al. | 2002
- 909
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Highly cross-linked polysilane as antireflective coating for deep ultraviolet lithography to improve durability during etchingSato, Yasuhiko / Shiobara, Eishi / Onishi, Yasunobu / Yoshikawa, Sawako / Nakano, Yoshihiko / Hayase, Shuzi / Hamada, Yoshitaka et al. | 2002
- 914
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Ion-graphy implanter with stencil maskNishihashi, T. / Kashimoto, K. / Fujiyama, J. / Sakurada, Y. / Shibata, T. / Suguro, K. / Sugihara, K. / Okumura, K. / Gotou, T. / Saji, S. et al. | 2002
- 918
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Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabricationKim, Sam-Dong / Hwang, In-Seok / Park, Hyung-Moo / Rhee, Jin-Koo / Nam, Chul-Woo et al. | 2002
- 924
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Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresistHoule, F. A. / Hinsberg, W. D. / Sanchez, M. I. / Hoffnagle, J. A. et al. | 2002
- 932
-
Fabrication of micrometer and nanometer scale structures in silica sol-gel films using electron beam writing methodsVisovsky, Nick J. / Ukrainczyk, Ljerka / Dawes, Steven B. et al. | 2002
- 936
-
Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride filmsYamada-Takamura, Y. / Yoshida, T. et al. | 2002
- 940
-
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion abilityLin, Kun-Cheng / Shieh, Jia-Min / Chang, Shih-Chieh / Dai, Bau-Tong / Chen, Chia-Fu / Feng, Ming-Shiann et al. | 2002
- 946
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Molecular dynamics simulation of sputter trench-filling morphology in damascene processJu, Shin-Pon / Weng, Cheng-I / Chang, Jee-Gong / Hwang, Chi-Chuan et al. | 2002
- 956
-
Patterning pentacene organic thin film transistorsKymissis, Ioannis / Dimitrakopoulos, Christos D. / Purushothaman, Sampath et al. | 2002
- 960
-
Controlled tuning of periodic morphologies on vicinal surfacesSzkutnik, Pierre-David / Sander, Dirk / Dulot, Frédéric / d’Avitaya, François Arnaud / Hanbücken, Margrit et al. | 2002
- 964
-
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperatureNg, T. K. / Yoon, S. F. / Wang, S. Z. / Loke, W. K. / Fan, W. J. et al. | 2002
- 969
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Room temperature magnetism in produced by both ion implantation and molecular-beam epitaxyOverberg, M. E. / Gila, B. P. / Thaler, G. T. / Abernathy, C. R. / Pearton, S. J. / Theodoropoulou, N. A. / McCarthy, K. T. / Arnason, S. B. / Hebard, A. F. / Chu, S. N. G. et al. | 2002
- 974
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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperaturesVan den Berg, J. A. / Armour, D. G. / Zhang, S. / Whelan, S. / Ohno, H. / Wang, T.-S. / Cullis, A. G. / Collart, E. H. J. / Goldberg, R. D. / Bailey, P. et al. | 2002
- 984
-
Specular ion current measurements as a quantitative, real-time probe of GaAs(001) epitaxial growthRuthe, K. C. / DeLuca, P. M. / Barnett, S. A. et al. | 2002
- 992
-
Cluster-ion implantation: An approach to fabricate ultrashallow junctions in siliconLu, Xinming / Shao, Lin / Wang, Xuemei / Liu, Jiarui / Chu, Wei-Kan / Bennett, Joe / Larson, Larry / Ling, Peiching et al. | 2002
- 995
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Nanophase films deposited from a high-rate, nanoparticle beamUrban, F. K. / Hosseini-Tehrani, A. / Griffiths, P. / Khabari, A. / Kim, Y.-W. / Petrov, I. et al. | 2002
- 1000
-
Effects of the polymer residues on via contact resistance after reactive ion etchingKo, Hyoung-Soo / Nah, Jae-Woong / Paik, Kyung W. / Park, Y. et al. | 2002
- 1008
-
Freestanding microheaters in Si with high aspect ratio microstructuresTian, W.-C. / Pang, S. W. et al. | 2002
- 1013
-
1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active regionLei, Po-Hsun / Wu, Ming-Yuan / Wu, Meng-Chyi / Lee, Chong-Yi / Ho, Wen-Jeng / Lin, Chia-Chien et al. | 2002
- 1019
-
Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuitsSugitani, Suehiro / Onodera, Kiyomitsu / Aoyama, Shinji / Hirano, Makoto / Tokumitsu, Masami et al. | 2002
- 1026
-
Charging-damage-free and precise dielectric etching in pulsed plasmaOhtake, H. / Samukawa, S. et al. | 2002
- 1031
-
Modeling and simulation of atomic layer deposition at the feature scaleGobbert, Matthias K. / Prasad, Vinay / Cale, Timothy S. et al. | 2002
- 1044
-
Low-energy electron point source microscope as a tool for transport measurements of free-standing nanometer-scale objects: Application to carbon nanotubesDorozhkin, P. / Nejoh, H. / Fujita, D. et al. | 2002
- 1048
-
Reduced pressure chemical vapor deposition of and heterostructuresLoup, V. / Hartmann, J. M. / Rolland, G. / Holliger, P. / Laugier, F. / Vannuffel, C. / Séméria, M. N. et al. | 2002
- 1055
-
Etching of polysilicon in inductively coupled and HBr discharges. I. Experimental characterization of polysilicon profilesMahorowala, Arpan P. / Sawin, Herbert H. / Jones, Richard / Labun, Andrew H. et al. | 2002
- 1064
-
Etching of polysilicon in inductively coupled and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kineticsMahorowala, Arpan P. / Sawin, Herbert H. et al. | 2002
- 1077
-
Etching of polysilicon in inductively coupled and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenchingMahorowala, Arpan P. / Sawin, Herbert H. et al. | 2002
- 1084
-
Etching of polysilicon in inductively coupled and HBr discharges. IV. Calculation of feature charging in profile evolutionMahorowala, Arpan P. / Sawin, Herbert H. et al. | 2002
- 1096
-
Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistorsYu, Kuo-Hui / Lin, Kun-Wei / Lin, Kuan-Po / Yen, Chih-Hung / Wang, Ckih-Kai / Liu, Wen-Chau et al. | 2002
- 1102
-
Growth and evolution of ZnCdSe quantum dotsShan, C. X. / Fan, X. W. / Zhang, J. Y. / Zhang, Z. Z. / Li, B. S. / Lu, Y. M. / Liu, Y. C. / Shen, D. Z. / Kong, X. G. / Wang, X. H. et al. | 2002
- 1107
-
Selective wet etching of AlGaAs in solutions: Application to vertical taper structures in integrated optoelectronic devicesHuang, Hui / Huang, Yongqing / Ren, Xiaomin et al. | 2002
- 1111
-
Effects of the underlayer substrates on copper chemical vapor depositionLin, Cheng-Li / Chen, Peng-Sen / Chen, Mao-Chieh et al. | 2002
- 1118
-
Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopyHuang, S. M. / Hong, M. H. / Luk’yanchuk, B. S. / Lu, Y. F. / Song, W. D. / Chong, T. C. et al. | 2002
- 1126
-
Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applicationsJohnson, R. S. / Hong, J. G. / Hinkle, C. / Lucovsky, G. et al. | 2002
- 1132
-
Feasibility of thin film microfabricated hydrogen ion sourcesReuss, Robert H. / Chalamala, Babu R. et al. | 2002
- 1135
-
Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 KBanerjee, Souri / Huang, Shaoyun / Yamanaka, Takayuki / Oda, Shunri et al. | 2002
- 1139
-
Investigation of polymethylmethacrylate resist residues using photoelectron microscopyMaximov, I. / Zakharov, A. A. / Holmqvist, T. / Montelius, L. / Lindau, I. et al. | 2002
- 1143
-
Ultrathin nitrided-nanolaminate for metal–oxide–semiconductor gate dielectric applicationsJeon, Sanghun / Yang, Hyundoek / Chang, Hyo Sik / Park, Dae-Gyu / Hwang, Hyunsang et al. | 2002
- 1154
-
Optical characterization of strained InGaAsN/GaAs multiple quantum wellsHéroux, J. B. / Yang, X. / Wang, W. I. et al. | 2002
- 1158
-
Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiencyKovsh, A. R. / Wang, J. S. / Wei, L. / Shiao, R. S. / Chi, J. Y. / Volovik, B. V. / Tsatsul’nikov, A. F. / Ustinov, V. M. et al. | 2002
- 1163
-
Growth of GaInNAs quaternaries using a digital alloy techniqueHong, Y. G. / Egorov, A. Yu. / Tu, C. W. et al. | 2002
- 1167
-
Growth and characterization of quantum wells with barriers by plasma-assisted molecular beam epitaxyGovindaraju, Sridhar / Holmes, Archie L. et al. | 2002
- 1170
-
Substrate preparation and low-temperature boron doped silicon growth on wafer-scale charge-coupled devices by molecular beam epitaxyCalawa, S. D. / Burke, B. E. / Nitishin, P. M. / Loomis, A. H. / Gregory, J. A. / Lind, T. A. et al. | 2002
- 1174
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Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptionsSigmund, J. / Saglam, M. / Hartnagel, H. L. / Zverev, V. N. / Raichev, O. E. / Debray, P. / Miehe, G. / Fuess, H. et al. | 2002
- 1178
-
Atomistics of III–V semiconductor surfaces: Role of group V pressureGrosse, Frank / Barvosa-Carter, William / Zinck, Jenna J. / Gyure, Mark F. et al. | 2002
- 1182
-
Electrical spin injection into quantum dots using (Ga,Mn)AsGhosh, S. / Bhattacharya, P. et al. | 2002
- 1185
-
Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrierStiff-Roberts, A. D. / Krishna, S. / Bhattacharya, P. / Kennerly, S. et al. | 2002
- 1188
-
Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using capping layersKim, Eui-Tae / Chen, Zhonghui / Ho, Max / Madhukar, Anupam et al. | 2002
- 1192
-
Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxySugaya, Takeyoshi / Bird, Jonathan P. / Ferry, David K. / Jang, Kee Youn / Ogura, Mutsuo / Sugiyama, Yoshinobu et al. | 2002
- 1196
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High quality GaAs grown on Si-on-insulator compliant substratesPei, C. W. / Héroux, J. B. / Sweet, J. / Wang, W. I. / Chen, J. / Chang, M. F. et al. | 2002
- 1200
-
Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafersBaklenov, O. / Lubyshev, D. / Wu, Y. / Fang, X.-M. / Fastenau, J. M. / Leung, L. / Towner, F. J. / Cornfeld, A. B. / Liu, W. K. et al. | 2002
- 1205
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Interfacial roughness and carrier scattering due to misfit dislocations in structuresNaidenkova, M. / Goorsky, M. S. / Sandhu, R. / Hsing, R. / Wojtowicz, M. / Chin, T. P. / Block, T. R. / Streit, D. C. et al. | 2002
- 1209
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High-frequency metamorphic photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communicationsHoke, W. E. / Leoni, R. E. / Whelan, C. S. / Marsh, P. F. / Jang, J. H. / Adesida, I. / Joshi, A. M. / Wang, X. et al. | 2002
- 1213
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InAs-based bipolar transistors grown by molecular beam epitaxyAverett, K. L. / Maimon, S. / Wu, X. / Koch, M. W. / Wicks, G. W. et al. | 2002
- 1217
-
Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxyNg, H. M. / Cho, A. Y. et al. | 2002
- 1221
-
Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxyNamkoong, Gon / Doolittle, W. Alan / Brown, April S. / Losurdo, Maria / Capezzuto, Pio / Bruno, Giovanni et al. | 2002
- 1229
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High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectorsBhattacharyya, A. / Iyer, Sandeep / Iliopoulos, E. / Sampath, A. V. / Cabalu, J. / Moustakas, T. D. / Friel, I. et al. | 2002
- 1234
-
Surface and interface characterization of GaN/AlGaN high electron mobility transistor structures by x-ray and atomic force microscopyTorabi, A. / Ericson, P. / Yarranton, E. J. / Hoke, W. E. et al. | 2002
- 1238
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Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas systemMéndez-Garcı́a, V. H. / Zamora, L. / Lastras-Martinez, A. / Saucedo, N. / Peña, R. / Guillén, A. / Rivera, Z. / Meléndez, M. / López, M. / Hernández, F. et al. | 2002
- 1243
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Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in photodetector structuresChen, Zhonghui / Kim, Eui-Tae / Madhukar, Anupam et al. | 2002
- 1247
-
Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxyLynch, C. / Chason, E. / Beresford, R. / Chen, E. B. / Paine, D. C. et al. | 2002
- 1251
-
Kinetics of the heteroepitaxial growth of Ge on Si(001)Yam, V. / Thanh, Vinh Le / Boucaud, P. / Débarre, D. / Bouchier, D. et al. | 2002
- 1259
-
Vertical ordering in multilayers of self-assembled Ge/Si(001) quantum dotsLe Thanh, Vinh / Yam, V. / Nguyen, Lam H. / Zheng, Y. / Boucaud, P. / Débarre, D. / Bouchier, D. et al. | 2002
- 1266
-
Growth and characterization of ferromagnetic epilayers on (001) ZnSeChun, S. H. / Ku, K. C. / Potashnik, S. J. / Schiffer, P. / Samarth, N. et al. | 2002
- 1270
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High characteristic temperature K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxyOhno, Yasuhide / Kanamori, Hironori / Shimomura, Satoshi / Hiyamizu, Satoshi et al. | 2002
- 1274
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Single-crystal GaN/Gd2O3/GaN heterostructureHong, M. / Kwo, J. / Chu, S. N. G. / Mannaerts, J. P. / Kortan, A. R. / Ng, H. M. / Cho, A. Y. / Anselm, K. A. / Lee, C. M. / Chyi, J. I. et al. | 2002
- 1278
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Molecular-beam epitaxy growth and properties of alloys for optoelectronic devicesMaksimov, O. / Muñoz, Martin / Tamargo, M. C. / Lau, J. / Neumark, G. F. et al. | 2002