Synchrotron radiation‐excited chemical‐vapor deposition and etching (English)
- New search for: Urisu, Tsuneo
- New search for: Kyuragi, Hakaru
- New search for: Urisu, Tsuneo
- New search for: Kyuragi, Hakaru
In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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5
, 5
;
1436-1440
;
1987
- Article (Journal) / Electronic Resource
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Title:Synchrotron radiation‐excited chemical‐vapor deposition and etching
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Additional title:Synchrotron radiation‐excited CVD and etching
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Contributors:Urisu, Tsuneo ( author ) / Kyuragi, Hakaru ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:1987-09-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 5, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1317
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Low‐resistivity W/WSix bilayer gates for self‐aligned GaAs metal–semiconductor field‐effect transistor large‐scale integrated circuitsKanamori, M. / Nagai, K. / Nozaki, T. et al. | 1987
- 1321
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A model for stress‐induced metal notching and voiding in very large‐scale‐integrated Al–Si (1%) metallizationMcPherson, J. W. / Dunn, C. F. et al. | 1987
- 1326
-
Secondary ion mass spectrometry studies of Al, Ga, and In unintentional donors in ZnSe epilayers on GaAsSmith, T. L. / Cheng, H. / Mohapatra, S. K. / Potts, J. E. et al. | 1987
- 1332
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A low‐energy metal‐ion source for primary ion deposition and accelerated ion doping during molecular‐beam epitaxyHasan, M.‐A. / Knall, J. / Barnett, S. A. / Rockett, A. / Sundgren, J.‐E. / Greene, J. E. et al. | 1987
- 1340
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Barrier height reduction in Au–Ge Schottky contacts to n‐type GaAsIliadis, A. et al. | 1987
- 1346
-
Determination of band offsets in AlGaAs/GaAs and InGaAs/GaAs multiple quantum wellsJi, G. / Huang, D. / Reddy, U. K. / Unlu, H. / Henderson, T. S. / Morkoç, H. et al. | 1987
- 1353
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The properties and exposure chemistry of a soluble polydiacetylene (P4BCMU) used as a negative electron‐beam resistColton, R. J. / Marrian, C. R. K. / Snow, A. / Dilella, D. et al. | 1987
- 1360
-
Dry process ultraviolet patterning of paracyclophane to polyparaxylyleneMariella, R. P. / Steinhauser, S. W. / Diebold, A. C. et al. | 1987
- 1364
-
Contribution of the ion‐energy distribution to the current‐density distribution of a focused‐ion beamKawanami, Yoshimi / Ishitani, Tohru / Umemura, Kaoru / Shukuri, Shoji et al. | 1987
- 1368
-
Effects of ambient gases on ion emission stability of liquid‐metal ion sourcesArimoto, Hiroshi / Miyauchi, Eizo / Hashimoto, Hisao et al. | 1987
- 1372
-
A mechanistic study of SF6/O2 reactive ion etching of molybdenumPark, Seong‐ju / Sun, Chung‐ping / Purtell, R. J. et al. | 1987
- 1374
-
Substrate rotation and carbon generation in a molecular‐beam epitaxy systemFarley, C. W. / Crook, G. E. / Kesan, V. P. / Block, T. R. / Stevens, H. A. / Mattord, T. J. / Neikirk, D. P. / Streetman, B. G. et al. | 1987
- 1377
-
A simple source for uniform and reproducible deposition of the dopant silicon in III–V molecular beam epitaxyMiller, D. L. / Sullivan, G. J. et al. | 1987
- 1387
-
The reaction of Si(100) 2×1 with NO and NH3: The role of surface dangling bondsAvouris, Ph. / Bozso, F. / Hamers, R. J. et al. | 1987
- 1393
-
Molecular‐dynamics simulation of low‐energy beam deposition of siliconDodson, Brian W. et al. | 1987
- 1399
-
Summary Abstract: Chemical etching of silicon by CO2 laser‐induced dissociation of NF3Brannon, James H. et al. | 1987
- 1400
-
Visible‐laser etching of refractory metals by surface modificationRothschild, M. / Sedlacek, J. H. C. / Ehrlich, D. J. et al. | 1987
- 1404
-
Modulated molecular‐beam studies of the surface chemistry of silicon reaction with reactive gasesOlander, D. R. / Balooch, M. / Abrefah, J. / Siekhaus, W. J. et al. | 1987
- 1410
-
Effects of Ar+ angle of incidence on the etching of Si with Cl2 and low‐energy Ar+ ionsvan Zwol, J. / van Laar, J. / Kolfschoten, A. W. / Dieleman, J. et al. | 1987
- 1415
-
Multiphoton‐induced desorption of positive ions from barium fluorideMatthias, E. / Nielsen, H. B. / Reif, J. / Rosén, A. / Westin, E. et al. | 1987
- 1423
-
Excited‐atom production by electron and ion bombardment of alkali halidesWalkup, R. E. / Avouris, Ph. / Ghosh, A. P. et al. | 1987
- 1427
-
Selective area deposition of metals using low‐energy electron beamsKunz, R. R. / Allen, T. E. / Mayer, T. M. et al. | 1987
- 1432
-
Summary Abstract: Role of ions in carbon‐film deposition by a windowless hydrogen lampHanabusa, M. / Kaneoka, T. et al. | 1987
- 1434
-
Summary Abstract: Ion‐beam‐induced deposition of gold by focused and broad‐beam sourcesDubner, A. D. / Shedd, G. M. / Lezec, H. / Melngailis, J. et al. | 1987
- 1436
-
Synchrotron radiation‐excited chemical‐vapor deposition and etchingUrisu, Tsuneo / Kyuragi, Hakaru et al. | 1987
- 1441
-
Summary Abstract: Nucleation considerations in the wavelength‐dependent activation selectivity of aluminum chemical‐vapor depositionHigashi, G. S. / Blonder, G. E. / Fleming, C. G. / McCrary, V. R. / Donnelly, V. M. et al. | 1987
- 1444
-
Chemiluminescence from F and XeF2 etching reactions with siliconMitchell, M. J. / Suto, M. / Lee, L. C. / Chuang, T. J. et al. | 1987
- 1450
-
An in situ infrared study on the interaction of oxygen plasmas with Si and fluorine plasmas with SiO2 surfacesClaassen, W. C. M. / Dieleman, J. et al. | 1987
- 1453
-
Ultraviolet‐assisted growth of GaAsBalk, P. / Fischer, M. / Grundmann, D. / Lückerath, R. / Lüth, H. / Richter, W. et al. | 1987
- 1460
-
Atomic‐layer growth of GaAs by modulated‐continuous‐wave laser metal‐organic vapor‐phase epitaxyAoyagi, Yoshinobu / Doi, Atsutoshi / Iwai, Souhachi / Namba, Susumu et al. | 1987
- 1465
-
Summary Abstract: Mass spectral identification of ultraviolet‐laser photoablation products from polymersEstler, R. C. / Nogar, N. S. et al. | 1987
- 1466
-
Sum‐frequency generation on dye‐coated surfaces using collinear and noncollinear excitation geometriesMuenchausen, R. E. / Nguyen, D. C. / Keller, R. A. / Nogar, N. S. et al. | 1987
- 1470
-
Surface diffusion measured by laser‐induced desorption: Monte Carlo simulation of effects of surface defects on diffusionHall, Richard B. / Upton, Thomas H. / Herbolzheimer, Eric et al. | 1987
- 1477
-
Ion and neutral atomic and cluster sputtering yields of molybdenumPellin, M. J. / Husinsky, W. / Calaway, W. F. / Burnett, J. W. / Schweitzer, E. L. / Young, C. E. / Jo/rgensen, B. / Gruen, D. M. et al. | 1987
- 1482
-
Molecular‐beam epitaxy growth mechanisms on GaAs(100) surfacesFarrell, H. H. / Harbison, J. P. / Peterson, L. D. et al. | 1987
- 1490
-
A study of the mechanism of metal deposition by the laser‐induced forward transfer processAdrian, F. J. / Bohandy, J. / Kim, B. F. / Jette, A. N. / Thompson, P. et al. | 1987
- 1495
-
Chemical processes involved in the etching of silicon by xenon difluorideDagata, J. A. / Squire, D. W. / Dulcey, C. S. / Hsu, D. S. Y. / Lin, M. C. et al. | 1987
- 1501
-
Summary Abstract: Adsorbate interactions and poisoning on Cr(110)Shinn, Neal D. et al. | 1987
- 1504
-
Formation of TiN on Si and SiO2 by rapid processing using a large area electron beamSun, Die‐chi / Yu, Zeng‐qi / Li, Fu‐ming / Du, Yuan‐cheng / Wang, Hai / Jiang, Guo‐bao et al. | 1987
- 1508
-
Tunneling spectroscopy study of aniline adsorbed on aluminum oxideGraves, R. J. / Wallace, C. B. / Ellialtioglu, R. / White, H. W. et al. | 1987
- 1514
-
The role of Farben centers in electron‐ and photon‐stimulated desorption from alkali halidesLoubriel, G. M. / Green, T. A. / Tok, N. H. / Haglund, R. F. et al. | 1987
- 1519
-
Summary Abstract: Laser etching and evaporation of CaF2 studied by mass spectrometryEstler, R. C. / Anderson, J. E. / Apel, E. C. / Nogar, N. S. et al. | 1987
- 1521
-
Energy deposition at insulator surfaces below the ultraviolet photoablation thresholdDreyfus, R. W. / McDonald, F. A. / von Gutfeld, R. J. et al. | 1987
- 1528
-
Summary Abstract: Imaging of surface atoms and their wave functions with the scanning tunneling microscopeDemuth, J. E. / Hamers, R. J. / Tromp, R. M. et al. | 1987
- 1530
-
Pulsed‐laser atom‐probe and field‐ion microscope study of solid surfacesTsong, T. T. / Liu, H. M. / Gao, Q. J. / Ren, D. M. / Liou, Y. et al. | 1987