Powder‐free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge (English)
National licence
- New search for: Watanabe, Y.
- New search for: Shiratani, M.
- New search for: Makino, H.
- New search for: Watanabe, Y.
- New search for: Shiratani, M.
- New search for: Makino, H.
In:
Applied Physics Letters
;
57
, 16
;
1616-1618
;
1990
- Article (Journal) / Electronic Resource
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Title:Powder‐free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge
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Contributors:
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Published in:Applied Physics Letters ; 57, 16 ; 1616-1618
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Publisher:
- New search for: American Institute of Physics
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Publication date:1990-10-15
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 57, Issue 16
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1595
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Effect of composition on the rates of photodarkening and silver photodoping in amorphous P‐Se filmsKawashima, Koichi / Hosono, Hideo / Abe, Yoshihiro et al. | 1990
- 1597
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Double‐sided epitaxy of multiquantum well modulator arrays by molecular beam epitaxyScott, E. G. / Rejman‐Greene, M. A. Z. et al. | 1990
- 1600
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New phase interference technique applied for sensitive photothermal microscopyWalther, H. G. / Friedrich, K. / Haupt, K. / Muratikov, K. / Glazov, A. et al. | 1990
- 1602
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Onset of subharmonics generated by forward wave interactions in Bi12SiO20Webb, D. J. / Au, L. B. / Jones, D. C. / Solymar, L. et al. | 1990
- 1605
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Submilliamp threshold vertical‐cavity laser diodesGeels, Randall S. / Coldren, Larry A. et al. | 1990
- 1608
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Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diodeZah, C. E. / Bhat, R. / Cheung, K. W. / Andreadakis, N. C. / Favire, F. J. / Menocal, S. G. / Yablonovitch, E. / Hwang, D. M. / Koza, M. / Gmitter, T. J. et al. | 1990
- 1610
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InGaAs/InP quantum well lasers with sub‐mA threshold currentTemkin, H. / Dutta, N. K. / Tanbun‐Ek, T. / Logan, R. A. / Sergent, A. M. et al. | 1990
- 1613
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Observation of reduced current thresholds in GaAs/AlGaAs vertical‐cavity surface‐emitting lasers grown on 4° off‐orientation (001) GaAs substratesWang, Y. H. / Tai, K. / Hsieh, Y. F. / Chu, S. N. G. / Wynn, J. D. / Cho, A. Y. et al. | 1990
- 1616
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Powder‐free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf dischargeWatanabe, Y. / Shiratani, M. / Makino, H. et al. | 1990
- 1619
-
Multi‐beam‐bulk model for electron transport during commutation in an optically triggered pseudospark thyratronPak, Hoyoung / Kushner, Mark J. et al. | 1990
- 1622
-
Friction reduction and zero wear for 52100 bearing steel by high‐dose implantation of carbonKobs, K. / Dimigen, H. / Denissen, C. J. M. / Gerritsen, E. / Politiek, J. / van Ijzendoorn, L. J. / Oechsner, R. / Kluge, A. / Ryssel, H. et al. | 1990
- 1625
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Spatially addressable light transducer using an organic electroluminescent diode combined with amorphous silicon carbide film as an electron photoinjecting electrodeHiramoto, Masahiro / Miyao, Tomoya / Yokoyama, Masaaki et al. | 1990
- 1628
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Growth of in situ doped silicon epitaxial layer by rapid thermal processingLee, S. K. / Ku, Y. H. / Hsieh, T. Y. / Jung, K. H. / Kwong, D. L. / Spratt, David / Chu, P. et al. | 1990
- 1631
-
Micro‐Raman characterization of structural defects in patterned GaAs‐on‐SiDuncan, W. M. / Matyi, R. J. / Shichijo, H. / Kao, Y.‐C. / Liu, H.‐Y. et al. | 1990
- 1634
-
Implantation profile of low‐energy positrons in solidsAsoka‐Kumar, P. / Lynn, K. G. et al. | 1990
- 1637
-
Possible dislocation multiplication source in (001) semiconductor epitaxyWashburn, J. / Kvam, E. P. et al. | 1990
- 1640
-
Influence of indium doping on AlGaAs layers grown by molecular beam epitaxyChang, K. H. / Lee, C. P. / Wu, J. S. / Liu, D. G. / Liou, D. C. et al. | 1990
- 1643
-
Influence of high‐dose γ irradiation on electron mobility in a silicon inversion layerMajkusiak, B. / Jakubowski, A. / Grigorov, K. / Balasin´ski, A. et al. | 1990
- 1645
-
Deep donors in GaSb grown by molecular beam epitaxyPoole, I. / Lee, M. E. / Cleverley, I. R. / Peaker, A. R. / Singer, K. E. et al. | 1990
- 1648
-
p‐type delta‐doped layers in silicon: Structural and electronic propertiesMattey, N. L. / Dowsett, M. G. / Parker, E. H. C. / Whall, T. E. / Taylor, S. / Zhang, J. F. et al. | 1990
- 1651
-
Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurementNoda, T. / Tanaka, M. / Sakaki, H. et al. | 1990
- 1654
-
Lower plasma‐induced damage in SiO2/Si at lower temperaturesMizutani, Tatsumi / Yunogami, Takashi / Tsujimoto, Kazunori et al. | 1990
- 1657
-
Radiation damage in ReSi2 by a MeV 4He beamBai, G. / Nicolet, M‐A. / Mahan, John E. / Geib, Kent M. / Robinson, Gary Y. et al. | 1990
- 1660
-
Formation of titanium nitride layers by the nitridation of titanium in high‐pressure ammonium ambientHara, Tohru / Tani, Kouichi / Inoue, Ken / Nakamura, Shigeaki / Murai, Takeshi et al. | 1990
- 1663
-
ZnSe field‐effect transistorsDreifus, D. L. / Sneed, B. P. / Ren, J. / Cook, J. W. / Schetzina, J. F. / Kolbas, R. M. et al. | 1990
- 1666
-
Transport properties of excitons in GaAs quantum wells−time‐resolved Raman probeTsen, K. T. / Sankey, O. F. / Morkoc¸, H. et al. | 1990
- 1669
-
Electronic surface states confined to the boundary of periodic multiple quantum wellsHuang, F. Y. et al. | 1990
- 1672
-
Vacuum lithography for in situ fabrication of buried semiconductor microstructuresWang, Y. L. / Temkin, H. / Harriott, L. R. / Hamm, R. A. / Weiner, J. S. et al. | 1990
- 1675
-
Study of electrical characteristics of polyoxides grown by rapid thermal oxdidationLo, G. Q. / Cheung, A. W. / Kwong, D. L. / Alvi, N. S. et al. | 1990
- 1678
-
Ballistic current vortex excitations in electron waveguide structuresLent, Craig S. et al. | 1990
- 1681
-
N+ doping of gallium arsenide by rapid thermal oxidation of a silicon capSadana, D. K. / de Souza, J. P. / Cardone, F. et al. | 1990
- 1684
-
Growth of InGaAs structures using in situ electrochemically generated arsineBuckley, D. N. / Seabury, C. W. / Valdes, J. L. / Cadet, G. / Mitchell, J. W. / DiGiuseppe, M. A. / Smith, R. C. / Filipe, J. R. C. / Bylsma, R. B. / Chakrabarti, U. K. et al. | 1990
- 1687
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Growth of YBa2Cu3O7 thin films on MgO: The effect of substrate preparationMoeckly, B. H. / Russek, S. E. / Lathrop, D. K. / Buhrman, R. A. / Li, Jian / Mayer, J. W. et al. | 1990
- 1690
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Application of a near coincidence site lattice theory to the orientations of YBa2Cu3O7−x grains on (001) MgO substratesHwang, D. M. / Ravi, T. S. / Ramesh, R. / Chan, Siu‐Wai / Chen, C. Y. / Nazar, L. / Wu, X. D. / Inam, A. / Venkatesan, T. et al. | 1990
- 1693
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Effect of annealing on superconductivity of Pb‐doped Bi‐Sr‐Ca‐Cu‐O single‐crystal superconductorsGao, Y. / Li, Y. / Merkle, K. L. / Jiang, P. Z. / Chang, Y. C. / Shi, H. / Lam, D. J. et al. | 1990
- 1696
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Femtosecond optical absorption studies of nonequilibrium electronic processes in high Tc superconductorsChwalek, J. M. / Uher, C. / Whitaker, J. F. / Mourou, G. A. / Agostinelli, J. / Lelental, M. et al. | 1990