Inelastic electron scattering study of metallic oxidation: Synergistic effects involving electrons during the low temperature oxidation of Ni(111) (English)
- New search for: Li, Wei
- New search for: Stirniman, M. J.
- New search for: Sibener, S. J.
- New search for: Li, Wei
- New search for: Stirniman, M. J.
- New search for: Sibener, S. J.
In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
;
13
, 3
;
1574-1578
;
1995
- Article (Journal) / Electronic Resource
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Title:Inelastic electron scattering study of metallic oxidation: Synergistic effects involving electrons during the low temperature oxidation of Ni(111)
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Additional title:Inelastic electron scattering study of metallic oxidation
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Contributors:
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Published in:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films ; 13, 3 ; 1574-1578
-
Publisher:
- New search for: American Vacuum Society
-
Publication date:1995-05-01
-
Size:5 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 13, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 503
-
Vacuum gauging with complementary metal–oxide–semiconductor microsensorsPaul, O. / Brand, O. / Lenggenhager, R. / Baltes, H. et al. | 1995
- 509
-
Optical method for low pressure measurementsBello, I. / Bederka, S. / Haworth, L. et al. | 1995
- 515
-
Surface analysis of carbon on ozone treated metalsMomose, T. / Maeda, Y. / Asano, K. / Ishimaru, H. et al. | 1995
- 520
-
Outgassing reduction of type 304 stainless steel by surface oxidation in airOdaka, Kenji / Ueda, Shinjiro et al. | 1995
- 524
-
Enhancement of hydrogen pumping by injecting fluorine into the exhaust system of turbomolecular pumpsOgure, N. / Shibata, A. / Ono, K. / Hayasaka, N. / Okano, H. / Okumura, K. et al. | 1995
- 531
-
Pumping behavior of ion pump elements at high and misaligned magnetic fieldsHseuh, H. C. / Jiang, W. S. / Mapes, M. et al. | 1995
- 536
-
Modeling of a multistage claw rotor vacuum pumpIoffe, I. V. / Koss, V. A. / Gray, M. / Livesey, R. G. et al. | 1995
- 540
-
Vacuum characteristics of titaniumMinato, Michio / Itoh, Yoshio et al. | 1995
- 545
-
Recombination limited outgassing of stainless steelMoore, Boude C. et al. | 1995
- 549
-
Theoretical submonolayer adsorption isotherms for hydrogen on a heterogeneous surfaceHobson, J. P. et al. | 1995
- 551
-
Pumping characteristics of a cryopump with Ar sorbent in He and in a D2/He mixtureMenon, M. M. / Laughon, G. J. / Maingi, R. / Wade, M. R. / Hillis, D. L. / Mahdavi, M. A. et al. | 1995
- 556
-
TiN thin film on stainless steel for extremely high vacuum materialSaito, K. / Inayoshi, S. / Ikeda, Y. / Yang, Y. / Tsukahara, S. et al. | 1995
- 562
-
Secondary ion mass spectroscopy analysis for aluminum surfaces treated by glow discharge cleaningChen, J. R. / Hsiung, G. Y. / Liu, Y. C. / Lee, W. H. / Nee, C. C. et al. | 1995
- 571
-
Reduction of outgassing rate by glow discharge cleaningLi, Minxu / Dylla, H. F. et al. | 1995
- 576
-
X‐ray photoelectron spectroscopy analysis of cleaning procedures for synchrotron radiation beamline materials at the Advanced Photon SourceLi, Y. / Ryding, D. / Liu, C. / Kuzay, T. M. / McDowell, M. W. / Rosenberg, R. A. et al. | 1995
- 581
-
Photon stimulated desorption measurements of extruded copper and of welded copper beam chambers for the PEP‐II asymmetric B factoryFoerster, C. L. / Lanni, C. / Perkins, C. / Calderon, M. / Barletta, W. et al. | 1995
- 585
-
Photodesorption from a copper chamber with a broached inner surfaceKobari, T. / Matumoto, M. / Hirano, N. / Katane, M. / Matsuzaki, M. / Hori, Y. / Kobayashi, M. / Nagai, M. et al. | 1995
- 590
-
Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applicationsEizenberg, M. / Littau, K. / Ghanayem, S. / Liao, M. / Mosely, R. / Sinha, A. K. et al. | 1995
- 596
-
Plasma enhanced chemical vapor deposition of TiO2 in microwave‐radio frequency hybrid plasma reactorLee, Young H. / Chan, Kevin K. / Brady, Michael J. et al. | 1995
- 602
-
Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopyWu, W. / Skala, S. L. / Tucker, J. R. / Lyding, J. W. / Seabaugh, A. / Beam, E. A. / Jovanovic, D. et al. | 1995
- 607
-
Fourier transform infrared study of rapid thermal annealing of a‐Si:N:H(D) films prepared by remote plasma‐enhanced chemical vapor depositionLu, Z. / Santos‐Filho, P. / Stevens, G. / Williams, M. J. / Lucovsky, G. et al. | 1995
- 614
-
Electrical transport properties of hot electrons at metal, insulator, and semiconductor interfacesLudeke, R. / Bauer, A. et al. | 1995
- 623
-
Epitaxial growth of a metal(CoSi2)/insulator(CaF2) nanometer‐thick heterostructure and its application to quantum‐effect devicesAsada, M. / Watanabe, M. / Suemasu, T. / Kohno, Y. / Saitoh, W. et al. | 1995
- 629
-
Optical waveguides on silicon chipsYokoyama, S. / Nagata, T. / Kuroda, Y. / Doi, T. / Namba, T. / Miyake, K. / Miyamoto, T. / Miyazaki, S. / Koyanagi, M. / Hirose, M. et al. | 1995
- 636
-
Si1−xGex/Si multiple quantum wells on Si(100) and Si(110) for infrared absorptionKreifels, T. L. / Hengehold, R. L. / Yeo, Y. K. / Thompson, P. E. / Simons, D. S. et al. | 1995
- 642
-
Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasersHobson, W. S. / Ren, F. / Mohideen, U. / Slusher, R. E. / Lamont Schnoes, M. / Pearton, S. J. et al. | 1995
- 646
-
Correlation of surface morphology with chemical structures of sulfur‐passivated GaAs(100) investigated by scanning tunneling microscopy and x‐ray photoelectron spectroscopyHa, Jeong Sook / Park, Seong‐Ju / Kim, Sung‐Bock / Lee, El‐Hang et al. | 1995
- 652
-
Sulfide‐assisted reordering at the InP surface and SiNx/InP interfaceKwok, R. W. M. / Jin, G. / So, B. K. L. / Hui, K. C. / Huang, L. / Lau, W. M. / Hsu, C. C. / Landheer, D. et al. | 1995
- 658
-
Sputter deposition of yttria‐stabilized zirconia onto a porous Au substrateJankowski, A. F. / Hayes, J. P. et al. | 1995
- 662
-
Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)Garcia, R. / Daley, K. E. / Sego, S. / Culbertson, R. J. / Poker, D. B. et al. | 1995
- 666
-
Zincblende–CdSe on GaSb(110): Characterization of epitaxial growth and electronic structureNeuhold, G. / Horn, K. / Magnusson, K. O. / Evans, D. A. et al. | 1995
- 672
-
Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor depositionHwang, C.‐Y. / Schurman, M. J. / Mayo, W. E. / Li, Y. / Lu, Y. / Liu, H. / Salagaj, T. / Stall, R. A. et al. | 1995
- 676
-
Conformality of SiO2 films from tetraethoxysilane‐sourced remote microwave plasma‐enhanced chemical vapor depositionRaupp, Gregory B. / Levedakis, Dimitri A. / Cale, Timothy S. et al. | 1995
- 681
-
Molecular beam epitaxy growth and characterizations of (Zn, Mg)(S,Se) epilayers for II–VI blue/green laser diodesGrillo, D. C. / Ringle, M. D. / Hua, G. C. / Han, J. / Gunshor, R. L. / Nurmikko, A. V. et al. | 1995
- 683
-
Molecular beam epitaxial growth of ZnMgSSe and its application to blue and green laser diodesIkeda, M. / Ishibashi, A. / Mori, Y. et al. | 1995
- 690
-
Deep levels near ‘‘buried’’ ZnSe/GaAs(100) heterointerfacesRaisanen, A. / Brillson, L. J. / Vanzetti, L. / Sorba, L. / Franciosi, A. et al. | 1995
- 696
-
Heteroepitaxy of lattice‐matched compound semiconductors on siliconBachmann, Klaus J. / Dietz, Nikolaus / Miller, Amy E. / Venables, David / Kelliher, James T. et al. | 1995
- 705
-
InGaN/AlGaN blue‐light‐emitting diodesNakamura, Shuji et al. | 1995
- 711
-
Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammoniaKidder, J. N. / Kuo, J. S. / Ludviksson, A. / Pearsall, T. P. / Rogers, J. W. / Grant, John M. / Allen, Lynn R. / Hsu, Sheng Teng et al. | 1995
- 716
-
Growth of InxGa1−xN and InxAl1−xN on GaAs metalorganic molecular beam epitaxyAbernathy, C. R. / MacKenzie, J. D. / Bharatan, S. R. / Jones, K. S. / Pearton, S. J. et al. | 1995
- 719
-
Outdiffusion of deuterium from GaN, AlN, and InNWilson, R. G. / Pearton, S. J. / Abernathy, C. R. / Zavada, J. M. et al. | 1995
- 724
-
Magnetron reactive ion etching of AlN and InN in BCl3 plasmasMcLane, G. F. / Casas, L. / Lareau, R. T. / Eckart, D. W. / Vartuli, C. B. / Pearton, S. J. / Abernathy, C. R. et al. | 1995
- 727
-
Ellipsometry for III–V epitaxial growth diagnosticsMaracas, G. N. / Kuo, C. H. / Anand, S. / Droopad, R. / Sohie, G. R. L. / Levola, T. et al. | 1995
- 733
-
Real‐time monitoring of resonant‐tunneling diode growth using spectroscopic ellipsometryCelii, F. G. / Kao, Y.‐C. / Katz, A. J. / Moise, T. S. et al. | 1995
- 740
-
Real‐time spectroscopic ellipsometry monitoring of Si1−xGex/Si epitaxial growthPickering, C. / Hope, D. A. O. / Carline, R. T. / Robbins, D. J. et al. | 1995
- 740
-
Real-time spectroscopic ellipsometry monitoring of Si1-xGe(sub x)-Si epitaxial growthPickering, C. et al. | 1995
- 745
-
Observation of surface symmetry for Si/XeF2 and Si/Cl2 system using second‐harmonic generationHaraichi, Satoshi / Sasaki, Fumio / Kobayashi, Shunsuke / Komuro, Masanori / Tani, Toshiro et al. | 1995
- 750
-
Effect of hydrogen annealing on second‐harmonic generation from SiO2/Si(111) interfacesHirayama, Hiroyuki / Ito, Fuminori / Watanabe, Kohji et al. | 1995
- 753
-
Nanoscale structures in III–V semiconductors using sidewall masking and high ion density dry etchingRen, F. / Pearton, S. J. / Abernathy, C. R. / Lothian, J. R. et al. | 1995
- 758
-
Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processingLovejoy, Michael L. / Howard, Arnold J. / Zavadil, Kevin R. / Rieger, Dennis J. / Shul, Randy J. / Barnes, Peter A. et al. | 1995
- 763
-
Sensor for measuring the atomic fraction in highly dissociated hydrogenGardner, W. L. et al. | 1995
- 767
-
Oxidation and 6H‐SiC–SiO2 interfacesHornetz, B. / Michel, H.‐J. / Halbritter, J. et al. | 1995
- 772
-
Evolution of atomic-scale roughening on Si(001)-(2x1) surfaces resulting from high temperature oxidationSeiple, J.V. et al. | 1995
- 772
-
Evolution of atomic‐scale roughening on Si(001)‐(2×1) surfaces resulting from high temperature oxidationSeiple, J. V. / Pelz, J. P. et al. | 1995
- 777
-
Atomically resolved scanning tunneling microscopy study of the adsorption and dissociation of methylchloride on Si(001)Bronikowski, Michael J. / Hamers, Robert J. et al. | 1995
- 782
-
Roughness in Si1−xGex/Si superlattices: Growth temperature dependenceHeadrick, R. L. / Baribeau, J.‐M. et al. | 1995
- 787
-
Buffer layer–modulation‐doped field‐effect‐transistor interactions in the Al0.33Ga0.67As/GaAs superlattice systemPellegrino, J. G. / Richter, C. A. / Dura, J. A. / Amirtharaj, P. M. / Qadri, S. B. / Roughani, B. et al. | 1995
- 792
-
Interfacial properties of metal–insulator–semiconductor capacitors on GaAs(110)Huang, L. J. / Rajesh, K. / Lau, W. M. / Ingrey, S. / Landheer, D. / Noël, J.‐P. / Lu, Z. H. et al. | 1995
- 797
-
The correlation between selective oxide etching and thermodynamic predictionMcNevin, S. C. et al. | 1995
- 801
-
High rate and highly selective SiO2 etching employing inductively coupled plasma and discussion on reaction kineticsHoriike, Yasuhiro / Kubota, Kazuhiro / Shindo, Haruo / Fukasawa, Takayuki et al. | 1995
- 810
-
Tungsten etching using an electron cyclotron resonance plasmaMaruyama, T. / Fujiwara, N. / Shiozawa, K. / Yoneda, M. et al. | 1995
- 815
-
Application of electron cyclotron resonance plasma source to conductive film depositionShimada, Masaru / Ono, Toshiro / Nishimura, Hiroshi / Matsuo, Seitaro et al. | 1995
- 820
-
Plasma‐enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursorsHoffman, David M. / Prakash Rangarajan, Sri / Athavale, Satish D. / Economou, Demetre J. / Liu, Jia‐Rui / Zheng, Zongshuang / Chu, Wei‐Kan et al. | 1995
- 826
-
Analysis of the oxygen contamination present in SiNx films deposited by electron cyclotron resonanceGarcía, S. / Martin, J. M. / Fernández, M. / Mártil, I. / González‐Diaz, G. et al. | 1995
- 831
-
Synergistic sputtering effects during ion bombardment with two ion speciesBerg, S. / Katardjiev, I. V. et al. | 1995
- 834
-
High‐aspect‐ratio Si etching for microsensor fabricationJuan, W. H. / Pang, S. W. et al. | 1995
- 839
-
Composition of the oxygen plasmas from two inductively coupled sourcesTuszewski, M. / Scheuer, J. T. / Tobin, J. A. et al. | 1995
- 843
-
Radio frequency hollow cathode discharge for large‐area double‐sided foil processingKorzec, D. / Schott, M. / Engemann, J. et al. | 1995
- 849
-
High density, low temperature dry etching in GaAs and InP device technologyPearton, S. J. / Abernathy, C. R. / Ren, F. et al. | 1995
- 853
-
Substrate bias effects in high‐aspect‐ratio SiO2 contact etching using an inductively coupled plasma reactorWesterheim, A. C. / Labun, A. H. / Dubash, J. H. / Arnold, J. C. / Sawin, H. H. / Yu‐Wang, V. et al. | 1995
- 859
-
The effect of the presheath on the ion angular distribution at the wafer surfaceZheng, Jie / Brinkmann, Ralf P. / McVittie, James P. et al. | 1995
- 865
-
Ponderomotive effects in helicon plasmasBrown, R. D. / Gilland, J. H. / Hershkowitz, N. / Breun, R. A. et al. | 1995
- 871
-
Large area radio frequency plasma for microelectronics processingYu, Z. / Shaw, D. / Gonzales, P. / Collins, G. J. et al. | 1995
- 875
-
Large volume electron cyclotron resonance plasma generation by use of the slotted antenna microwave sourceEngemann, J. / Schott, M. / Werner, F. / Korzec, D. et al. | 1995
- 883
-
Performance and modeling of a permanent magnet electron cyclotron resonance plasma sourceSaproo, A. / Mantei, T. D. et al. | 1995
- 887
-
Diagnostics and control of radicals in an inductively coupled etching reactorSugai, H. / Nakamura, K. / Hikosaka, Y. / Nakamura, M. et al. | 1995
- 894
-
Monitoring InP and GaAs etched in Cl2/Ar using optical emission spectroscopy and mass spectrometryThomas, S. / Ko, K. K. / Pang, S. W. et al. | 1995
- 900
-
Effect of plasma overetch of polysilicon on gate oxide damageGabriel, Calvin T. / McVittie, James P. et al. | 1995
- 905
-
Plasma-induced gate-oxide charging issues for sub-0.5 mm complementary metal-oxide-semiconductor technologiesStamper, A.K. et al. | 1995
- 905
-
Plasma‐induced gate‐oxide charging issues for sub‐0.5 μm complementary metal–oxide–semiconductor technologiesStamper, A. K. / Lasky, J. B. / Adkisson, J. W. et al. | 1995
- 912
-
Plasma‐induced damage of GaAs during etching of refractory metal contactsShul, R. J. / Lovejoy, M. L. / Baca, A. G. / Zolper, J. C. / Rieger, D. J. / Hafich, M. J. / Corless, R. F. / Vartuli, C. B. et al. | 1995
- 918
-
Spatiotemporal powder formation and trapping in radio frequency silane plasmas using two‐dimensional polarization‐sensitive laser scatteringDorier, J.‐L. / Hollenstein, Ch. / Howling, A. A. et al. | 1995
- 927
-
Dynamics of particulates in the afterglow of a radio frequency excited plasmaYeon, Chung‐Kyu / Kim, Jung‐hun / Whang, Ki‐Woong et al. | 1995
- 931
-
Reactive ion etching‐induced damage in GaAs/AlGaAs quantum well structures and recovery by rapid thermal annealing and hydrogen passivationYoo, Byueng‐Su / Park, Seong‐Ju / Park, Kyung‐Ho et al. | 1995
- 935
-
Ion and neutral argon temperatures in electron cyclotron resonance plasmas by Doppler broadened emission spectroscopyTsu, David V. / Young, R. T. / Ovshinsky, S. R. / Klepper, C. C. / Berry, L. A. et al. | 1995
- 943
-
Identification of plasma induced failure modes in the development of a bipolar‐complementary metal–oxide–semiconductor processHackenberg, J. J. / Dion, M. J. / Hemmenway, D. F. / Pearce, L. G. / Werner, J. W. et al. | 1995
- 948
-
Preparation of germanium doped plasma polymerized coatings as inertial confinement fusion target ablatorsBrusasco, Raymond / Saculla, Michael / Cook, Robert et al. | 1995
- 952
-
Development of neutral‐beam‐assisted etcherYunogami, Takashi / Yokogawa, Ken’etsu / Mizutani, Tatsumi et al. | 1995
- 959
-
Hyperthermal neutral beam etchingGiapis, Konstantinos P. / Moore, Teresa A. / Minton, Timothy K. et al. | 1995
- 966
-
Molecular dynamics simulation of atomic layer etching of siliconAthavale, Satish D. / Economou, Demetre J. et al. | 1995
- 972
-
Defect production and recombination during low‐energy ion processingKellerman, B. K. / Floro, J. A. / Chason, E. / Brice, D. K. / Picraux, S. T. / White, J. M. et al. | 1995
- 979
-
Precision shell characterization using radial averaging of x‐ray imagesStephens, Richard B. et al. | 1995
- 983
-
The design, performance, and application of an atomic force microscope‐based profilometerMcEachern, R. L. / Moore, C. E. / Wallace, R. J. et al. | 1995
- 990
-
Thin film sensors for automobilesTaga, Y. et al. | 1995
- 990
-
Thin Films for Sensors| 1995
- 996
-
Increasing the selectivity of commercially available tin oxide based gas sensors for monitoring combustible gases in process environmentsHawk, Roger M. / Narayanaswamy, Arvind et al. | 1995
- 1001
-
Piezoelectric tactile integrated circuit sensorKolesar, Edward S. / Dyson, Craig S. et al. | 1995
- 1008
-
Composition and morphology of a MgF2/Al multilayer thin film reflective coatingWeimer, J. J. / Kim, J. / Zukic, M. / Torr, D. G. et al. | 1995
- 1008
-
Optical, Piezoeletric, and Ferroelectric Films| 1995
- 1013
-
Production and characterization of multilayer KCl:LiF thin films on glassSomma, F. / Ercoli, A. / Santucci, S. / Lozzi, L. / Passacantando, M. / Picozzi, P. et al. | 1995
- 1017
-
Smart thin film TiNi/piezoelectric heterostructuresMercado, P. G. / Jardine, A. P. et al. | 1995
- 1022
-
Microstructures of sputtered PbTiO3 thin filmsSatoh, Toshifumi / Wasa, Kiyotaka / Tabata, Kenji / Adachi, Hideaki / Ichikawa, Yo / Setsune, Kentaro et al. | 1995
- 1027
-
A novel technique for characterizing the surface coverage of thin‐film chemical vapor deposition in ultra‐high‐aspect‐ratio microstructuresSoave, Robert J. / Tasker, G. William / Then, Alan M. / Mayer, James W. / Shacham‐Diamand, Yosi et al. | 1995
- 1027
-
Deposition and Characterization Techniques of Nanostructures in Thin Films| 1995
- 1032
-
Fabrication of thin films with highly porous microstructuresRobbie, K. / Friedrich, L. J. / Dew, S. K. / Smy, T. / Brett, M. J. et al. | 1995
- 1036
-
Heteroepitaxial growth of C70 films on MoS2(0001) and their characterization by low energy electron diffraction and photoelectron spectroscopyHan, Bo‐ying / Hevesi, K. / Yu, Li‐ming / Gensterblum, G. / Pireaux, J.‐J. / Thiry, P. A. / Caudano, R. et al. | 1995
- 1040
-
Magnetic, microstructural, and compositional characterization of Fe–N thin films for recording sensor applicationsKim, Y. K. / Narayan, P. B. et al. | 1995
- 1044
-
Positron annihilation studies of diamondlike nanocomposite filmsAsoka‐Kumar, P. / Dorfman, B. F. / Abraizov, M. G. / Yan, D. / Pollak, Fred H. et al. | 1995
- 1048
-
Calculation of the figure of merit for indium tin oxide films based on basic theoryKnickerbocker, S. A. / Kulkarni, A. K. et al. | 1995
- 1048
-
Aspects of Thin Films| 1995
- 1053
-
Low temperature formation of textured ZnO transparent electrodes by magnetron sputteringMinami, Tadatsugu / Sonohara, Hideo / Takata, Shinzo / Fukuda, Ichiro et al. | 1995
- 1058
-
Vacuum conditions for sputtering thin film TiNiJardine, A. Peter et al. | 1995
- 1058
-
Vacuum conditions for sputtering thin film TiNlJardine, A. P. et al. | 1995
- 1063
-
Ionized magnetron sputter deposition of amorphous carbon nitride thin filmsLi, D. / Lopez, S. / Chung, Y. W. / Wong, M. S. / Sproul, W. D. et al. | 1995
- 1067
-
Residual stress in metal ion implanted titanium nitride films studied by glancing incidence x‐ray diffractionPerry, Anthony J. / Treglio, James R. / Valvoda, Vaclav / Rafaja, David et al. | 1995
- 1073
-
Thin Films for Energy Conversion and Efficiency-Active Films| 1995
- 1073
-
Sputter deposition of cermet fuel electrodes for solid oxide fuel cellsTsai, T. / Barnett, S. A. et al. | 1995
- 1078
-
Morphology of precursors and CuIn1−xGaxSe2 thin films prepared by a two‐stage selenization processDhere, Neelkanth G. / Kuttath, Shanker / Moutinho, Helio R. et al. | 1995
- 1083
-
Growth of chalcopyrite Cu(In,Ga)Se2/CuIn3Se5 absorbers by radio frequency sputteringHernández‐Rojas, J. L. / Mártil, I. / Santamaria, J. / González‐Diaz, G. / Sánchez‐Quesada, F. et al. | 1995
- 1088
-
Attaining a solar energy economy with active thin film structuresGoldner, R. B. et al. | 1995
- 1095
-
Properties of transparent zinc‐stannate conducting films prepared by radio frequency magnetron sputteringMinami, T. / Takata, S. / Sato, H. / Sonohara, H. et al. | 1995
- 1100
-
Oxygen content of indium tin oxide films fabricated by reactive sputteringHonda, Shinichi / Tsujimoto, Akira / Watamori, Michio / Oura, Kenjiro et al. | 1995
- 1100
-
Thin Film Characterization and Sensors Applications| 1995
- 1104
-
Structure and composition of hydrogenated TixCy thin films prepared by reactive sputteringDelplancke, M. P. / Vassileris, V. / Winand, R. et al. | 1995
- 1111
-
Synchrotron radiation photoelectron emission microscopy of chemical‐vapor‐deposited diamond electron emittersShovlin, J. D. / Kordesch, M. E. / Dunham, D. / Tonner, B. P. / Engel, W. et al. | 1995
- 1116
-
Surface spectroscopic studies of the deposition of TiN thin films from tetrakis‐(dimethylamido)‐titanium and ammoniaCorneille, J. S. / Chen, P. J. / Truong, C. M. / Oh, W. S. / Goodman, D. W. et al. | 1995
- 1121
-
Characterization of aluminum based oxide layers formed by microwave plasmaKatz‐Tsameret, Zivit / Raveh, Avi et al. | 1995
- 1128
-
Investigation of pyroelectric characteristics of lead titanate thin films for microsensor applicationsDeb, K. K. / Bennett, K. W. / Brody, P. S. et al. | 1995
- 1133
-
ReSi2 thin‐film infrared detectorsBecker, James P. / Mahan, John E. / Long, Robert G. et al. | 1995
- 1136
-
Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopyHammond, M. S. / Schultz, J. A. / Krauss, A. R. et al. | 1995
- 1136
-
In Situ Thin Film Characterization| 1995
- 1145
-
Spectroscopic ellipsometry of thin films on transparent substrates: A formalism for data interpretationYang, Y. H. / Abelson, J. R. et al. | 1995
- 1150
-
Optical emission spectroscopy of H2–CO and H2O–CH3OH plasmas for diamond growthManukonda, R. / Dillon, R. / Furtak, T. et al. | 1995
- 1155
-
Effect of 20–95 eV Ar ion bombardment of GaAs(001): In pursuit of damage‐free ion‐assisted growth and etchingMirecki Millunchick, J. / Hultman, L. / Barnett, S. A. et al. | 1995
- 1155
-
Thin Film Microstructure Evolution| 1995
- 1160
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A molecular dynamics study of transient processes during deposition on (001) metal surfacesGilmore, C. M. / Sprague, J. A. et al. | 1995
- 1165
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Annealing study of gold films using scanning tunneling microscopyPorath, D. / Bar‐Sadeh, E. / Wolovelsky, M. / Grayevsky, A. / Goldstein, Y. / Millo, O. et al. | 1995
- 1171
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Role of temporal delay in dual‐laser ablated plumesWitanachchi, S. / Mukherjee, P. et al. | 1995
- 1171
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Pulsed Laser and Pulsed Ion Technology for Film Deposition and Surface Modification| 1995
- 1175
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Large‐area pulsed laser deposition: Techniques and applicationsGreer, J. A. / Tabat, M. D. et al. | 1995
- 1182
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Film deposition and surface modification using intense pulsed ion beamsMeli, C. A. / Grabowski, K. S. / Hinshelwood, D. D. / Stephanakis, S. J. / Rej, D. J. / Waganaar, W. J. et al. | 1995
- 1188
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Reactive direct current magnetron sputtering of aluminum oxide coatingsSproul, W. D. / Graham, M. E. / Wong, M. S. / Lopez, S. / Li, D. / Scholl, R. A. et al. | 1995
- 1192
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Simultaneous deposition and lamination process in vacuumFreeland, A. W. / Germundson, J. R. / Swisher, R. L. / Barnes, K. P. / Phipps, J. A. / Wan, C. T. et al. | 1995
- 1192
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Manufacturing Technology for Coatings| 1995
- 1196
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Surface Engineering for Wear and Corrosion Protection| 1995
- 1196
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Thermomechanical and chemical properties of SiC–C functionally gradient coatings on graphiteRichards, M. R. / Richards, A. C. / Taya, M. / Ohuchi, F. S. et al. | 1995
- 1202
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Plasma‐based surface engineering processes for wear and corrosion protectionMatthews, A. / Leyland, A. / Dorn, B. / Stevenson, P. R. / Bin‐Sudin, M. / Rebholz, C. / Voevodin, A. / Schneider, J. et al. | 1995
- 1208
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A vacuum technology for coating TiCN‐based cermetsKonyashin, I. Yu. et al. | 1995
- 1213
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CUMULATIVE AUTHOR INDEX| 1995
- 1217
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Imaging and Small Area Analysis| 1995
- 1217
-
Surface trimer crystallization on poly (ethylene terephthalate) studied by time‐of‐flight secondary ion mass spectrometryReichlmaier, S. / Bryan, S. R. / Briggs, D. et al. | 1995
- 1224
-
Scanning photoelectron microscope with submicron lateral resolution using a Wolter‐type x‐ray focusing mirrorNinomiya, Ken / Hasegawa, Masaki et al. | 1995
- 1229
-
Scanning Auger microscopy and x‐ray photoelectron spectroscopy studies of Roman bronzesPaparazzo, E. / Moretto, L. / Northover, J. P. / D’Amato, C. / Palmieri, A. et al. | 1995
- 1234
-
Strain imaging analysis of Si using Raman microscopyAjito, K. / Sukamto, J. P. H. / Nagahara, L. A. / Hashimoto, K. / Fujishima, A. et al. | 1995
- 1239
-
Nature of the use of adventitious carbon as a binding energy standardBarr, Tery L. / Seal, Sudipta et al. | 1995
- 1247
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Oxidation of gold by ultraviolet light and ozone at 25 (degree)CKing, David E. et al. | 1995
- 1247
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Oxidation of gold by ultraviolet light and ozone at 25 °CKing, David E. et al. | 1995
- 1254
-
X‐ray photoelectron and infrared spectroscopies of Cu‐implanted silica and borosilicate glassesHenderson, D. O. / George, M. A. / Tung, Y. S. / Mu, R. / Burger, A. / Morgan, S. H. / Collins, W. E. / White, C. W. / Zuhr, R. A. / Magruder, R. H. et al. | 1995
- 1260
-
Investigations of the surface chemistry of pathogenic silicatesSeal, Sudipta / Krezoski, Susan / Hardcastle, Steven E. / Barr, Tery L. / Petering, David H. / Cheng, Chi‐Feng / Klinowski, Jacek / Evans, Peter H. et al. | 1995
- 1267
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Depth profiling free carbon in silicon carbidePaulson, T. E. / Bojan, V. J. / Wichterman, B. M. / Pantano, C. G. et al. | 1995
- 1275
-
Metal overlayers on organic functional groups of self‐organized molecular assemblies. V. Ion scattering spectroscopy and x‐ray photoelectron spectroscopy of Ag/COOH interfacesHerdt, G. C. / Czanderna, A. W. et al. | 1995
- 1281
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Comparative analysis of trimethylmethoxysilane and trimethylchlorosilane bonding on polished copper surfacesMishra, S. / Weimer, J. J. et al. | 1995
- 1286
-
Counterion and dopant induced effects on the structure of electropolymerized polyaniline thin filmsPorter, T. L. / Minore, D. / Sykes, A. G. et al. | 1995
- 1290
-
Thickness determination of uniform overlayers on rough substrates: A comparison of calculations for Al2O3/Al to x‐ray photoelectron spectroscopy and atomic force microscopy experiments on technical aluminum foilsGunter, P. L. J. / Niemantsverdriet, J. W. et al. | 1995
- 1293
-
Quantitative depth profiling of oxygen in homoepitaxial SrTiO3 filmsWatamori, Michio / Oura, Kenjiro / Nakamura, Takao et al. | 1995
- 1299
-
An x‐ray photoelectron spectroscopic study of voltage bias implantation and nitrogen etching of aluminumRooke, Michael A. / Rotole, John A. / Sherwood, Peter M. A. et al. | 1995
- 1304
-
Inelastic mean free pathlengths of electrons for quantitative investigations of ultrathin technological surface layers by angle‐resolved x‐ray photoelectron spectrometryGries, Werner H. et al. | 1995
- 1310
-
Simultaneous dual‐element analyses of refractory metals in naturally occurring matrices using resonance ionization of sputtered atomsCalaway, W. F. / Wiens, R. C. / Burnett, D. S. / Pellin, M. J. / Gruen, D. M. et al. | 1995
- 1316
-
Resolution in sputter depth profiling assessed by AlAs/GaAs superlatticesKajiwara, K. / Shimizu, R. et al. | 1995
- 1321
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The effect of tilt angle on As implants in SiAnthony, J. M. / Keenan, J. A. et al. | 1995
- 1325
-
Nondestructive and quantitative depth profiling analysis of ion bombarded Ta2O5 surfaces by medium energy ion scattering spectroscopyLee, J. C. / Chung, C. S. / Kang, H. J. / Kim, Y. P. / Kim, H. K. / Moon, D. W. et al. | 1995
- 1331
-
Probing the different phases of self‐assembled monolayers on metal surfaces: Temperature dependence of the C–H stretching modesBensebaa, F. / Ellis, T. H. / Badia, A. / Lennox, R. B. et al. | 1995
- 1337
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Metal overlayers on organic functional groups of self‐assembled monolayers. VI. X‐ray photoelectron spectroscopy of Cr/COOH on 16‐mercaptohexadecanoic acidJung, D. R. / Czanderna, A. W. et al. | 1995
- 1345
-
Adsorption of perfluorinated n‐alkanoic acids on native aluminum oxide surfacesWallace, R. M. / Chen, P. J. / Henck, S. A. / Webb, D. A. et al. | 1995
- 1351
-
Probing the interfacial properties of poly(vinyl acetate‐ethylene) copolymer/poly(vinyl chloride) laminations by time‐of‐flight secondary ion mass spectrometryCornelio Clark, Paula A. / Gardner, Sharon A. / Horwat, David et al. | 1995
- 1359
-
Surface chemistry at metallic step defect sitesYates, John T. et al. | 1995
- 1368
-
Surface chemistry of 1,1‐dimethylhydrazine on platinumSchwaner, A. L. / Kovar, M. / Alberas, Diann J. / White, J. M. et al. | 1995
- 1373
-
Simulation and sensitivity analysis of the heterogeneous oxidation of methane on a platinum foilBehrendt, F. / Deutschmann, O. / Maas, U. / Warnatz, J. et al. | 1995
- 1378
-
Surface relaxation of PbTe(100)Lazarides, A. A. / Duke, C. B. / Paton, A. / Kahn, A. et al. | 1995
- 1382
-
High resolution photoemission and Auger parameter studies of electronic structure of tin oxidesKövér, L. / Moretti, G. / Kovács, Zs. / Sanjinés, R. / Cserny, I. / Margaritondo, G. / Pálinkás, J. / Adachi, H. et al. | 1995