Thermal atomic layer etching: A review (English)
- New search for: Fischer, Andreas
- New search for: Routzahn, Aaron
- New search for: George, Steven M.
- New search for: Lill, Thorsten
- New search for: Fischer, Andreas
- New search for: Routzahn, Aaron
- New search for: George, Steven M.
- New search for: Lill, Thorsten
In:
Journal of Vacuum Science & Technology A
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39
, 3
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17
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2021
- Article (Journal) / Electronic Resource
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Title:Thermal atomic layer etching: A review
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Contributors:Fischer, Andreas ( author ) / Routzahn, Aaron ( author ) / George, Steven M. ( author ) / Lill, Thorsten ( author )
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Published in:Journal of Vacuum Science & Technology A ; 39, 3 ; 17
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Publisher:
- New search for: American Vacuum Society
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Publication date:2021-05-01
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Size:17 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 39, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approachesJaffal, Moustapha / Yeghoyan, Taguhi / Lefèvre, Gauthier / Gassilloud, Rémy / Possémé, Nicolas / Vallée, Christophe / Bonvalot, Marceline et al. | 2021
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Thermal atomic layer etching: A reviewFischer, Andreas / Routzahn, Aaron / George, Steven M. / Lill, Thorsten et al. | 2021
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Heterovalent semiconductor structures and devices grown by molecular beam epitaxyZhang, Yong-Hang / Smith, David J. et al. | 2021
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Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for ZrxHf1−xO2Muneshwar, Triratna / Barlage, Doug / Cadien, Ken et al. | 2021
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Ion implantation in β-Ga2O3: Physics and technologyNikolskaya, Alena / Okulich, Evgenia / Korolev, Dmitry / Stepanov, Anton / Nikolichev, Dmitry / Mikhaylov, Alexey / Tetelbaum, David / Almaev, Aleksei / Bolzan, Charles Airton / Buaczik, Antônio et al. | 2021
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Microstructure and optical properties of sputter-deposited Ga2O3 filmsVega, Eduardo / Isukapati, Sundar B. / Oder, Tom N. et al. | 2021
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Influence of quantum-confined device fabrication on semiconductor-laser theoryChow, Weng W. / Jahnke, Frank et al. | 2021
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Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting filmSabeeh, Ala H. / Brigman, Alyssa N. / Ruzyllo, Jerzy et al. | 2021
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Effect of metal contacts on (100) β-Ga2O3 Schottky barriersLyle, Luke A. M. / Jiang, Kunyao / Favela, Elizabeth V. / Das, Kalyan / Popp, Andreas / Galazka, Zbigniew / Wagner, Guenter / Porter, Lisa M. et al. | 2021
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Self-assembled nanocolumns in Bi2Se3 grown by molecular beam epitaxyGinley, Theresa P. / Law, Stephanie et al. | 2021
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Enhancement in the tribological performance of WSx/a-C multilayer films with Al sublayers in vacuumYang, Fang-er / Zhang, Wan-kun / Wang, Gong-qi / Wang, Tao / Zheng, Xiao-hua et al. | 2021
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Topotactic crystal structure transformation from spinel ferrite to wüstite in epitaxial Fe3O4 films via Kr ion irradiationLiu, Yang / Hisamatsu, Yuki / Sharmin, Sonia / Oshima, Daiki / Iwata, Satoshi / Kato, Takeshi / Sekiba, Daiichiro / Kita, Eiji / Yanagihara, Hideto et al. | 2021
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Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer depositionKolhep, Maximilian / Sun, Cheng / Bläsing, Jürgen / Christian, Björn / Zacharias, Margit et al. | 2021
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(tBuN)SiMe2NMe2—A new N,N′-κ2-monoanionic ligand for atomic layer deposition precursorsGriffiths, Matthew B. E. / Zanders, David / Land, Michael A. / Masuda, Jason D. / Devi, Anjana / Barry, Seán T. et al. | 2021
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Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory studyHidayat, Romel / Kim, Hye-Lee / Kim, Hohoon / Byun, Younghun / Lee, Jongsoo / Lee, Won-Jun et al. | 2021
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Atomic layer deposition and selective etching of ruthenium for area-selective deposition: Temperature dependence and supercycle designVos, Martijn F. J. / Chopra, Sonali N. / Ekerdt, John G. / Agarwal, Sumit / Kessels, Wilhelmus M. M. (Erwin) / Mackus, Adriaan J. M. et al. | 2021
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Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer depositionWang, Chen / Bao, Chun-Hui / Wu, Wan-Yu / Hsu, Chia-Hsun / Zhao, Ming-Jie / Lien, Shui-Yang / Zhu, Wen-Zhang et al. | 2021
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In situ compositional mapping of combinatorial materials libraries by scanning low-angle x-ray spectroscopyKim, Jeonggoo / Strikovski, Mikhail D. / Garrahan, Steven L. / Mozelack, Richard / Parkinson, Jonathan E. / Kolagani, Solomon H. et al. | 2021
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Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperatureZhou, Shun / Liu, Hao / Dong, Linpeng / Liu, Weiguo / Song, Shigeng / Liu, Wenjun et al. | 2021
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Efficacy of boron nitride encapsulation against plasma-processing of 2D semiconductor layersKumar, Pawan / Figueroa, Kelotchi S. / Foucher, Alexandre C. / Jo, Kiyoung / Acero, Natalia / Stach, Eric A. / Jariwala, Deep et al. | 2021
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Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InPAhadi, Kaveh / Cadien, Ken et al. | 2021
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Correlation between electrical conductivity and luminescence properties in β-Ga2O3:Cr3+ and β-Ga2O3:Cr,Mg single crystalsVasyltsiv, Vyacheslav / Luchechko, Andriy / Zhydachevskyy, Yaroslav / Kostyk, Lyudmyla / Lys, Roman / Slobodzyan, Dmytro / Jakieła, Rafał / Pavlyk, Bohdan / Suchocki, Andrzej et al. | 2021
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Erratum: “Universal scaling relationship for atomic layer etching” [J. Vac. Sci. Technol. A 39, 010401 (2021)]Kanarik, Keren J. / Tan, Samantha / Yang, Wenbing / Berry, Ivan L. / Pan, Yang / Gottscho, Richard A. et al. | 2021
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N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germaniumRanga, Praneeth / Bhattacharyya, Arkka / Whittaker-Brooks, Luisa / Scarpulla, Michael A. / Krishnamoorthy, Sriram et al. | 2021
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Epitaxial integration of BaTiO3 on Si for electro-optic applicationsGuo, Wei / Posadas, Agham B. / Demkov, Alexander A. et al. | 2021
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Atomic layer deposition and characterization of Zn-doped Ga2O3 filmsBaji, Zsófia / Cora, Ildikó / Horváth, Zsolt Endre / Agócs, Emil / Szabó, Zoltán et al. | 2021
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Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based filmsWalton, S. G. / Boris, D. R. / Rosenberg, S. G. / Miyazoe, H. / Joseph, E. A. / Engelmann, S. U. et al. | 2021
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Study of plasma etching impact on chemoepitaxy directed self-assemblyGusmão Cacho, Maria Gabriela / Benotmane, Khatia / Le Pennec, Aurélie / Bouet, Charlotte / Pimenta-Barros, Patricia / Rademaker, Guido / Argoud, Maxime / Tiron, Raluca / Possémé, Nicolas et al. | 2021
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Gate spacers etching of Si3N4 using cyclic approach for 3D CMOS devicesBacquié, Valentin / Tavernier, Aurélien / Boulard, François / Pollet, Olivier / Possémé, Nicolas et al. | 2021
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Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applicationsHernandez-Mainet, Luis / Chen, Guopeng / Zangiabadi, Amir / Shen, Aidong / Tamargo, Maria C. et al. | 2021
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Influence of W content on microstructure and surface morphology of hard Ni-W films fabricated by magnetron co-sputteringEsmaeili, Amir R. / Mir, Noshin / Mohammadi, Reza et al. | 2021
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Epitaxial superconductor-semiconductor two-dimensional systems for superconducting quantum circuitsO’Connell Yuan, Joseph / Wickramasinghe, Kaushini S. / Strickland, William M. / Dartiailh, Matthieu C. / Sardashti, Kasra / Hatefipour, Mehdi / Shabani, Javad et al. | 2021
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Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing techniquePark, Hyunik / Choi, Yongha / Yang, Sujung / Bae, Jinho / Kim, Jihyun et al. | 2021
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Influence of oxygen partial pressure on properties of monoclinic Ga2O3 deposited on sapphire substratesFreitas, Jaime A. / Culbertson, James C. / Nepal, Neeraj / Mock, Alyssa L. / Tadjer, Marko J. / Feng, Zixuan / Zhao, Hongping et al. | 2021
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Phosphites as precursors in atomic layer deposition thin film synthesisKvamme, Kristian B. / Ruud, Amund / Weibye, Kristian / Sajavaara, Timo / Nilsen, Ola et al. | 2021
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Atomic layer deposition of sodium fluoride thin filmsKuraitis, Sara / Kang, Donghyeon / Mane, Anil U. / Zhou, Hua / Soares, Jake / Elam, Jeffrey W. / Graugnard, Elton et al. | 2021
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Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughnessWang, Xifeng / Wang, Mingmei / Biolsi, Peter / Kushner, Mark J. et al. | 2021
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Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodesYadav, Manoj K / Mondal, Arnab / Sharma, Satinder K. / Bag, Ankush et al. | 2021
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Defect species in Ga-doped ZnO films characterized by photoluminescenceAkazawa, Housei et al. | 2021
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Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewallsÖsterlund, Elmeri / Seppänen, Heli / Bespalova, Kristina / Miikkulainen, Ville / Paulasto-Kröckel, Mervi et al. | 2021
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Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistorsChoi, Su-Hwan / Jeong, Hyun-Jun / Hong, TaeHyun / Na, Yong Hwan / Park, Chi Kwon / Lim, Myung Yong / Jeong, Seong Hoon / Lim, Jun Hyung / Park, Jin-Seong et al. | 2021
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Oxidative molecular layer deposition of PEDOT using volatile antimony(V) chloride oxidantVolk, Amanda A. / Kim, Jung-Sik / Jamir, Jovenal / Dickey, Elizabeth C. / Parsons, Gregory N. et al. | 2021
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Plasma-jet sterilization enhanced by ion windZhu, Hongcheng / Jiang, Linxiu / Xie, Shouru / Jiang, Yongrong / Li, Hua et al. | 2021
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Preface for the AVS Peter Mark award 40th anniversary collectionAydil, Eray S. / Kessels, Wilhelmus M. M. / Law, Stephanie / Sankaran, Mohan / Zide, Joshua M. O. et al. | 2021
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Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2Xu, Wanxing / Lemaire, Paul C. / Sharma, Kashish / Gasvoda, Ryan J. / Hausmann, Dennis M. / Agarwal, Sumit et al. | 2021
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Impact of precursor concentration on the properties of perovskite solar cells obtained from the dehydrated lead acetate precursorsSanni, Dahiru M. / Yerramilli, Aditya S. / Ntsoenzok, Esidor / Adeniji, Sharafadeen A. / Oyelade, Omolara V. / Koech, Richard K. / Fashina, Adebayo A. / Alford, Terry L. et al. | 2021
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Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxyTadjer, Marko J. / Sasaki, Kohei / Wakimoto, Daiki / Anderson, Travis J. / Mastro, Michael A. / Gallagher, James C. / Jacobs, Alan G. / Mock, Alyssa L. / Koehler, Andrew D. / Ebrish, Mona et al. | 2021
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Atomic layer deposition of chromium oxide—An interplay between deposition and etchingMandol, Bireswar / Mahuli, Neha / Ohno, Kenichi / Scudder, Lance / Sarkar, Shaibal K. et al. | 2021
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Properties of indium tin oxide thin films grown by Ar ion beam sputter depositionBundesmann, Carsten / Bauer, Jens / Finzel, Annemarie / Gerlach, Jürgen W. / Knolle, Wolfgang / Hellmich, Anke / Synowicki, Ron et al. | 2021
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Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistanceYeghoyan, Taguhi / Pesce, Vincent / Jaffal, Moustapha / Lefevre, Gauthier / Gassilloud, Rémy / Posseme, Nicolas / Bonvalot, Marceline / Vallée, Christophe et al. | 2021
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Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopySmentkowski, Vincent S. / Goswami, Shubhodeep et al. | 2021
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Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxyDing, Yuanfeng / Yao, Jinshan / Yuan, Ziyuan / Li, Chen / Lu, Ming-Hui / Lu, Hong / Chen, Yan-Feng et al. | 2021
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High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3Bae, Jinho / Jeon, Dae-Woo / Park, Ji-Hyeon / Kim, Jihyun et al. | 2021