Annealing temperature dependence of effective magnetic anisotropy of Fe‐Cu‐Nb‐Si‐B nanocrystalline alloys (English)
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- New search for: Xiong, Xiang‐Yuan
- New search for: Ho, Kai‐Yuan
- New search for: Xiong, Xiang‐Yuan
- New search for: Ho, Kai‐Yuan
In:
Journal of Applied Physics
;
77
, 5
;
2094-2096
;
1995
- Article (Journal) / Electronic Resource
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Title:Annealing temperature dependence of effective magnetic anisotropy of Fe‐Cu‐Nb‐Si‐B nanocrystalline alloys
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Contributors:Xiong, Xiang‐Yuan ( author ) / Ho, Kai‐Yuan ( author )
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Published in:Journal of Applied Physics ; 77, 5 ; 2094-2096
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Publisher:
- New search for: American Institute of Physics
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Publication date:1995-03-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 77, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1827
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Heat and mass transfer in semiconductor melts during single‐crystal growth processesKakimoto, Koichi et al. | 1995
- 1843
-
X‐ray focusing optics. I. Applications of wave optics to doubly curved crystals with a point x‐ray sourceChukhovskii, F. N. / Chang, W. Z. / Fo¨rster, E. et al. | 1995
- 1849
-
X‐ray focusing optics. II. Properties of doubly bent crystals with an extended x‐ray sourceChukhovskii, F. N. / Chang, W. Z. / Fo¨rster, E. et al. | 1995
- 1855
-
Sample‐probe interactions in spectroscopy: Sampling microscopic property gradientsLipkin, Don M. / Clarke, David R. et al. | 1995
- 1864
-
Characteristics of absorption Fabry–Pe´rot modulators due to the influence of coupled cavitiesLaw, Kwok‐Keung et al. | 1995
- 1864
-
Characteristics of absorption Fabry-Pérot modulators due to the influence of coupled cavitiesLaw, Kwok-Keung et al. | 1995
- 1868
-
Description of the thermalization process of the sputtered atoms in a glow discharge using a three‐dimensional Monte Carlo methodBogaerts, Annemie / van Straaten, Mark / Gijbels, Renaat et al. | 1995
- 1875
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Evolution of electrical activity and structure of nickel precipitates with the treatment temperature of a Σ=25 silicon bicrystalRizk, R. / Ihlal, A. / Portier, X. et al. | 1995
- 1875
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Evolution of electrical activity and structure of nickel precipitates with the treatment temperature of a Sigme = 25 silicon bicrystalRizk, R. / Ihlal, A. / Portier, X. et al. | 1995
- 1875
-
Evolution of electrical activity and structure of nickel precipitates with the treatment temperature of a SRizk, R. et al. | 1995
- 1881
-
Optical and crystalline properties of Yb implanted InPKatsumata, H. / Uekusa, S. / Majima, A. / Kumagai, M. et al. | 1995
- 1888
-
Two‐dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopyHenning, Albert K. / Hochwitz, Todd / Slinkman, James / Never, James / Hoffmann, Steven / Kaszuba, Phil / Daghlian, Charles et al. | 1995
- 1897
-
Kinetic model for photoinduced and thermally induced creation and annihilation of metastable defects in hydrogenated amorphous siliconAbdulhalim, I. et al. | 1995
- 1902
-
Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibriumReichert, W. / Chen, C. Y. / Li, W. M. / Shield, J. E. / Cohen, R. M. / Simons, D. S. / Chi, P. H. et al. | 1995
- 1907
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Strain, dislocations, and critical dimensions of laterally small lattice‐mismatched semiconductor layersAtkinson, A. / Jain, S. C. / Harker, A. H. et al. | 1995
- 1914
-
Molecular motions and ordering of the interfacial, droplet and binder regions of polymer dispersed liquid crystal displays: A paramagnetic resonance spin probe studyKim, Y. C. / Lee, S. H. / West, J. L. / Gelerinter, E. et al. | 1995
- 1923
-
Effect of substrate preparation on smectic liquid crystal alignment. II. Further results and modelingSmela, Elisabeth / Marti´nez‐Miranda, Luz J. et al. | 1995
- 1930
-
Effect of substrate preparation on smectic liquid‐crystal alignment. III. The significance of thermal historySmela, Elisabeth / Marti´nez‐Miranda, Luz J. et al. | 1995
- 1934
-
Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructuresFischer, G. G. / Zaumseil, P. / Bugiel, E. / Osten, H. J. et al. | 1995
- 1938
-
Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilaneHasegawa, S. / Watanabe, S. / Inokuma, T. / Kurata, Y. et al. | 1995
- 1948
-
Determination of Si self‐interstitial diffusivities from the oxidation‐enhanced diffusion in B doping‐superlattices: The influence of the marker layersGossmann, H.‐J. / Gilmer, G. H. / Rafferty, C. S. / Unterwald, F. C. / Boone, T. / Poate, J. M. / Luftman, H. S. / Frank, W. et al. | 1995
- 1952
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Metalorganic molecular beam epitaxy growth characteristics of GaAs using triethylgallium and trisdimethylaminoarsenicLiu, X. F. / Asahi, H. / Inoue, K. / Marx, D. / Asami, K. / Miki, K. / Gonda, S. et al. | 1995
- 1959
-
Growth of SiGe quantum wires and dots on patterned Si substratesHartmann, A. / Vescan, L. / Dieker, C. / Lu¨th, H. et al. | 1995
- 1964
-
Thin InSb films—A candidate for multiple recordingChou, L. H. / Kuo, M. C. et al. | 1995
- 1969
-
Structure and thermal stability of sputtered metal/oxide multilayers: The case of Co/Al2O3Morawe, Ch. / Zabel, H. et al. | 1995
- 1977
-
Direct measurement of lateral elastic modulations in a zero‐net strained GaInAsP/InP multilayerPonchet, A. / Rocher, A. / Emery, J‐Y. / Starck, C. / Goldstein, L. et al. | 1995
- 1985
-
Organic/inorganic superlattices with ordered organic layersTokito, Shizuo / Sakata, Jiro / Taga, Yasunori et al. | 1995
- 1990
-
Excitonic binding energies in diffused‐intermixed GaAs/AlAs/AlGaAs double barrier quantum wellsKupka, R. K. / Chen, Y. et al. | 1995
- 1998
-
Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductorsPalma, A. / Jime´nez‐Tejada, J. A. / Melchor, I. / Lo´pez‐Villanueva, J. A. / Carceller, J. E. et al. | 1995
- 2006
-
Diffusion length measurements on n-CuInS2 crystals by ealuation of electron-beam-induced current profiles in edge-scan and planar configurationsScheer, R. / Lewerenz, H.J. et al. | 1995
- 2006
-
Diffusion length measurements on n‐CuInS2 crystals by evaluation of electron‐beam‐induced current profiles in edge‐scan and planar configurationsScheer, R. / Lewerenz, H. J. et al. | 1995
- 2010
-
Structure and magnetoresistance of granular Ag‐FexCo1−x alloys: Influence of a phase change from fcc to bccKubinski, D. J. / Holloway, H. et al. | 1995
- 2015
-
A numerical study of the z2 parameter for random suspensions of disksGreengard, Leslie et al. | 1995
- 2015
-
A numerical study of the ζ2 parameter for random suspensions of disksGreengard, Leslie / Helsing, Johan et al. | 1995
- 2015
-
A numerical study of the zeta~2 parameter for random suspensions of disksGreengard, L. / Helsing, J. et al. | 1995
- 2020
-
Impact‐ionization model consistent with the band structure of semiconductorsSano, Nobuyuki / Yoshii, Akira et al. | 1995
- 2026
-
Reduction of deep defect concentration in chlorine‐doped ZnSe by after‐growth thermal treatmentHu, B. / Karczewski, G. / Luo, H. / Bindley, U. / Furdyna, J. K. et al. | 1995
- 2029
-
Proposal of step barrier structures to reduce hole localization in multiple quantum well structuresTomita, Akihisa et al. | 1995
- 2032
-
Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interfaceDiMaria, D. J. / Buchanan, D. A. / Stathis, J. H. / Stahlbush, R. E. et al. | 1995
- 2041
-
Determination of free‐carrier‐enhanced emission rate of carriers in depletion‐edge region by constant capacitance techniqueTomokage, Hajime / Ueta, Takeshi / Furuta, Hirosuke / Miyamoto, Tokuo et al. | 1995
- 2046
-
Influence of the DX center on capacitance‐voltage profiling for Si δ ‐doped AlxGa1−xAsYang, G. M. / Seo, K. S. / Choe, Byung‐Doo et al. | 1995
- 2046
-
Influence of the DX center on capacitance-voltage profiling for Si d-doped AlxGa1 - xAsYang, G.M. et al. | 1995
- 2052
-
Non‐ohmic behavior of the high‐field magnetoresistances in AlGaAs/GaAs heterostructuresAllerman, A. A. / Xu, W. / Hauser, N. / Jagadish, C. et al. | 1995
- 2056
-
Defect‐assisted ohmic contacts on p‐InPPark, Moon‐Ho / Yeh, C. L. / Wang, L. C. / Deng, F. / Liu, Q. Z. / Clawson, A. R. / Lau, S. S. et al. | 1995
- 2061
-
Relationship between hydrogenation and optical properties of dielectric a‐SiC:H films prepared by tetrakis(trimethylsilyl)silane in remote H2 plasmaWickramanayaka, Sunil / Nakanishi, Yoichiro / Hatanaka, Yoshinori et al. | 1995
- 2067
-
Investigation of the temperature dependence of the critical state in melt processed YBa2Cu3O7 - a thick filmsDewhurst, C.D. et al. | 1995
- 2067
-
Investigation of the temperature dependence of the critical state in melt processed YBa2Cu3O(7-delta thick filmsDewhurst, C.D. / Cardwell, D.A. / Alford, N.McN. et al. | 1995
- 2067
-
Investigation of the temperature dependence of the critical state in melt processed YBa2Cu3O7−∂ thick filmsDewhurst, C. D. / Cardwell, D. A. / Alford, N. McN. et al. | 1995
- 2073
-
Influence of the idle region on the dynamic properties of window Josephson tunnel junctionsMonaco, R. / Costabile, G. / Martucciello, N. et al. | 1995
- 2081
-
Superconducting properties of Nb‐CuMn multilayersAttanasio, C. / Maritato, L. / Prischepa, S. L. / Salvato, M. / Engel, B. N. / Falco, C. M. et al. | 1995
- 2087
-
Interaction of optical waveguide modes with dipole‐exchange surface spin waves in a Lu2.14Bi0.86Fe4.94Mg0.06O12 filmMatyushev, V. V. / Kostylev, M. P. / Stashkevich, A. A. / Desvignes, J. M. et al. | 1995
- 2090
-
ac-susceptibility studies on Zr1 - xHoxCo2 (0 <= x <= 1) system and their hydridesRamesh, R. et al. | 1995
- 2090
-
ac‐susceptibility studies on Zr1−xHoxCo2 [0≤x≤1] system and their hydridesRamesh, R. / Ramachandra Rao, M. S. / Rama Rao, K. V. S. et al. | 1995
- 2094
-
Annealing temperature dependence of effective magnetic anisotropy of Fe‐Cu‐Nb‐Si‐B nanocrystalline alloysXiong, Xiang‐Yuan / Ho, Kai‐Yuan et al. | 1995
- 2097
-
Transverse susceptibility of particulate recording media in different remanence statesZimmermann, G. et al. | 1995
- 2097
-
Transvese susceptibility of particulate recording media in different remanence statesZimmermann, G. et al. | 1995
- 2102
-
Electro‐optical properties of a single domain PbTiO3 crystalFontana, M. D. / Abdi, F. / Wojcik, K. et al. | 1995
- 2107
-
Calculations of femtosecond differential optical transmission in germaniumBailey, D. W. / Stanton, C. J. et al. | 1995
- 2116
-
Spectra of tetravalent chromium in calcium fluorophosphateGruber, John B. / Morrison, Clyde A. / Harris, Daniel C. / Seltzer, Michael D. / Allik, Toomas H. / Hutchinson, J. Andrew / Scripsick, Michael P. et al. | 1995
- 2124
-
Photoreflectance study of Si delta‐doped low‐temperature GaAs grown by molecular beam epitaxyCheng, T. M. / Chang, C. Y. / Hsu, T. M. / Lee, W. C. / Huang, J. H. et al. | 1995
- 2128
-
Bismuth substituted iron garnet thin films deposited on silicon by laser ablationLe, T. M. / Huang, F. / Stancil, D. D. / Lambeth, D. N. et al. | 1995
- 2133
-
Optical constants and film density of TiNxOy solar selective absorbersLazarov, M. / Raths, P. / Metzger, H. / Spirkl, W. et al. | 1995
- 2138
-
Field enhancement of the photoelectric and secondary electron emission from CsIBuzulutskov, A. / Breskin, A. / Chechik, R. et al. | 1995
- 2138
-
Field enhancement of the photoelectric and secondary electron emission from CslBuzulutskov, A. et al. | 1995
- 2146
-
Electrical properties of ferroelectric thin‐film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applicationsAl‐Shareef, H. N. / Auciello, O. / Kingon, A. I. et al. | 1995
- 2155
-
Kinetic study of atomic hydrogen etching of GaAs (100)Elzey, John W. / Meharg, Paul F. A. / Ogryzlo, Elmer A. et al. | 1995
- 2160
-
Atomic and magnetic ordering in CoPt alloyGomonaj, Elena V. / Klugmann, Eugeniusz et al. | 1995
- 2166
-
Oxidation of polycrystalline silver films by hyperthermal oxygen atomsOakes, D. B. / Krech, R. H. / Upschulte, B. L. / Caledonia, G. E. et al. | 1995
- 2173
-
Electron irradiation of two‐terminal, monolithic InP/Ga0.47In0.53As tandem solar cellsCotal, H. L. / Walters, R. J. / Summers, G. P. / Messenger, S. R. et al. | 1995
- 2177
-
Output characteristics of short‐channel polycrystalline silicon thin‐film transistorsDimitriadis, C. A. / Tassis, D. H. et al. | 1995
- 2184
-
Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high‐electron‐mobility transistorsAniel, F. / Boucaud, P. / Sylvestre, A. / Crozat, P. / Julien, F. H. / Adde, R. / Jin, Y. et al. | 1995
- 2190
-
Growth of epitaxial ferromagnetic MnSb layers by hot‐wall epitaxyTatsuoka, H. / Kuwabara, H. / Oshita, M. / Nakanishi, Y. / Nakamura, T. / Fujiyasu, H. et al. | 1995
- 2193
-
Microwave response of YBa2Cu3O7−x grain boundary junctionCho, Changhyun / Shin, Joongshik / Hwang, Doosup / Kim, Youngkeun / Lee, Youngjong / Chun, John S. / No, Kwangsoo / Bae, Sungjoon / Hong, Seungbum et al. | 1995
- 2196
-
Nb lift‐off procedure for micropatterning Bi2Sr2Ca1Cu2O8+x thin filmsAttanasio, C. / Coccorese, C. / Maritato, L. / Prischepa, S. L. / Salvato, M. et al. | 1995
- 2199
-
Thermal behavior of deep levels correlated with iron in silicon metal‐oxide‐semiconductor structureKishino, S. / Iwamoto, S. / Yoshida, H. / Niu, H. / Matsuda, T. et al. | 1995
- 2202
-
Interface properties of (NH4)2Sx‐treated In0.5Ga0.5P Schottky contactsKwon, S. D. / Kim, C. H. / Kwon, Ho Ki / Choe, Byung‐Doo / Lim, H. et al. | 1995
- 2205
-
Efficient frequency doubling and locking of diode laser light in periodically segmented KTiOPO4 waveguideEger, D. / Oron, M. / Katz, M. / Zussman, A. et al. | 1995
- 2208
-
Second order optical nonlinearity of surface crystallized glass with lithium niobateDing, Yong / Osaka, Akiyoshi / Miura, Yoshinari / Toratani, Hisayoshi / Matsuoka, Yoshihiko et al. | 1995
- 2211
-
Origin of perfect selectivity of Si epitaxial growth through disilane molecular‐beam epitaxy using synchrotron radiationUtsumi, Yuichi / Akazawa, Housei et al. | 1995
- 2214
-
Specific heat behavior for pseudobinary compounds ErxDy1−xSbLong, Y. / Hashiguchi, T. / Hashimoto, T. / Okamura, M. / Sori, N. et al. | 1995
- 2214
-
Specific heat behavior of pseudobinary compounds Er(x)Dy(1-x)SbLong, Y. / Hashiguchi, T. / Hasimoto, T. / Okamura, M. / Sori, N. et al. | 1995
- 2217
-
Photorefractive property and self‐pumped phase conjugation of Mn‐doped (K0.5Na0.5)0.2(Sr0.75 Ba0.25)0.9Nb2O6 crystalLu, Xinliang / Wu, Yaocai / Jiang, Quanzhong / Chen, Lei / Chen, Huanchu / Dou, Shuoxing / Ye, Peixuan et al. | 1995
- 2220
-
Laser ionization time‐of‐flight mass spectrometric study on laser ablation of a graphite‐like material of (BC2N)ncompositionKokai, F. / Taniwaki, M. / Koga, Y. / Kakudate, Y. / Fujiwara, S. / Fukuda, K. / Kawaguchi, M. et al. | 1995
- 2223
-
Comment on ‘‘Generation phenomena of localized interface states induced by irradiation and post‐irradiation annealing at the Si/SiO2 interface’’ [J. Appl. Phys. 73, 4388 (1993)]Alexandrova, S. et al. | 1995
- 2224
-
Response to ‘‘Comment on ‘Generation phenomena of localized interface states induced by irradiation and post‐irradiation annealing at the Si/SiO2’ ’’ [J. Appl. Phys. 77, 2223 (1995)]Kimura, M. et al. | 1995
- 2225
-
40th Annual Conference on Magnetism and Magnetic Materials| 1995
- 2226
-
CUMULATIVE AUTHOR INDEX| 1995