Field emission properties of carbon nanotube emitters dependent on electrode geometry (English)
- New search for: Song, Yenan
- New search for: Hoon Shin, Dong
- New search for: Jeon, Seok-Gy
- New search for: Kim, Jung-Il
- New search for: Jin Lee, Cheol
- New search for: Song, Yenan
- New search for: Hoon Shin, Dong
- New search for: Jeon, Seok-Gy
- New search for: Kim, Jung-Il
- New search for: Jin Lee, Cheol
In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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31
, 5
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5
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2013
- Article (Journal) / Electronic Resource
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Title:Field emission properties of carbon nanotube emitters dependent on electrode geometry
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Additional title:Field emission properties of carbon nanotube emitters
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Contributors:Song, Yenan ( author ) / Hoon Shin, Dong ( author ) / Jeon, Seok-Gy ( author ) / Kim, Jung-Il ( author ) / Jin Lee, Cheol ( author )
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Published in:
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Publisher:
- New search for: American Vacuum Society
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Publication date:2013-09-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 31, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Flexible substrate and release layer for flexible MEMS devicesAhmed, Moinuddin / Butler, Donald P. et al. | 2013
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Low-damage silicon etching using a neutral beamMiwa, Kazuhiro / Nishimori, Yuki / Ueki, Shinji / Sugiyama, Masakazu / Kubota, Tomohiro / Samukawa, Seiji et al. | 2013
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Three-step growth of metamorphic GaAs on Si(001) by low-pressure metal organic chemical vapor depositionWang, Yifan / Wang, Qi / Jia, Zhigang / Li, Xiaoyi / Deng, Can / Ren, Xiaomin / Cai, Shiwei / Huang, Yongqing et al. | 2013
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Vacuum frequency mixer with a field emitter arrayGotoh, Yasuhito / Yasutomo, Yoshiki / Tsuji, Hiroshi et al. | 2013
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Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineeringSheng, Josephine J. / Leonhardt, Darin / Han, Sang M. / Johnston, Steven W. / Cederberg, Jeffrey G. / Carroll, Malcolm S. et al. | 2013
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Fabrication of transferrable, fully suspended silicon photonic crystal nanomembranes exhibiting vivid structural color and high-Q guided resonanceLin, Chenxi / Martínez, Luis Javier / Povinelli, Michelle L. et al. | 2013
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Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor depositionPolyakov, Alexander Y. / Smirnov, N. B. / Kozhukhova, E. A. / Osinsky, Andrei V. / Pearton, Stephen J. et al. | 2013
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Thermal pretreatment of sapphire substrates prior to ZnO buffer layer growthHuang, Shimin / Gu, Shulin / Zhu, Shunming / Gu, Ran / Tang, Kun / Ye, Jiandong / Zhang, Rong / Shi, Yi / Zheng, Youdou et al. | 2013
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Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing processBoronat, Alfredo / Silvestre, Santiago / Orpella, Albert et al. | 2013
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Fabrication of GaN nanodots via GaN thermal decomposition in H2 atmosphereHui, Xiong / Zhang, Jin / Li, Senlin / Wang, Hu / Fang, Yanyan / Dai, Jiangnan / Chen, Changqing et al. | 2013
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Universal three-dimensional nanofabrication for hard materialsYamazaki, Kenji / Yamaguchi, Hiroshi et al. | 2013
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Smooth MgO films grown on graphite and graphene by pulsed laser depositionStuart, Sean C. / Satchet, Edward / Sandin, Andreas / Maria, Jon-Paul / Rowe, John E. (Jack) / Dougherty, Daniel B. / Ulrich, Marc et al. | 2013
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Influence of porosity on dielectric breakdown of ultralow-k dielectricsVanstreels, Kris / Ciofi, Ivan / Barbarin, Yohan / Baklanov, Mikhail et al. | 2013
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Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmasBlanc, Romuald / Leverd, François / David, Thibaut / Joubert, Olivier et al. | 2013
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Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structureYan, Xin / Zhang, Xia / Li, Junshuai / Cui, Jiangong / Wang, Sijia / Fan, Shuyu / Huang, Yongqing / Ren, Xiaomin et al. | 2013
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Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistorsPark, Sungho / Park, Sekyoung / Ahn, Seung-Eon / Song, Ihun / Chae, Wonseok / Han, Manso / Lee, Jeseung / Jeon, Sanghun et al. | 2013
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Influence of the hydrogen implantation power density on ion cutting of GeRuan, Yujiao / Lin, Wang / Chen, Songyan / Li, Cheng / Lai, Hongkai / Huang, Wei / Li, Jun et al. | 2013
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Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material systemChin, Matthew L. / Periasamy, Prakash / O'Regan, Terrance P. / Amani, Matin / Tan, Cheng / O'Hayre, Ryan P. / Berry, Joseph J. / Osgood, Richard M. / Parilla, Philip A. / Ginley, David S. et al. | 2013
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Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN filmsSarney, Wendy L. / Svensson, Stefan P. et al. | 2013
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Stiction-free fabrication of lithographic nanostructures on resist-supported nanomechanical resonatorsDiao, Zhu / Losby, Joseph E. / Burgess, Jacob A. J. / Sauer, Vincent T. K. / Hiebert, Wayne K. / Freeman, Mark R. et al. | 2013
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Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devicesLima, Lucas P. B. / Diniz, José A. / Radtke, Claudio / dos Santos, Marcos V. P. / Doi, Ioshiaki / Godoy Fo, José et al. | 2013
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Highly thermally stable in situ SiNX passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structureChiu, Hsien-Chin / Chen, Chao-Hung / Yang, Chih-Wei / Kao, Hsuan-Ling / Huang, Fan-Hsiu / Peng, Sheng-Wen / Lin, Heng-Kuang et al. | 2013
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Field emission properties of carbon nanotube emitters dependent on electrode geometrySong, Yenan / Hoon Shin, Dong / Jeon, Seok-Gy / Kim, Jung-Il / Jin Lee, Cheol et al. | 2013
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Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistorsKim, Hong-Yeol / Kim, Jihyun / Liu, Lu / Lo, Chien-Fong / Ren, Fan / Pearton, Stephen J. et al. | 2013
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Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized SiTurcotte-Tremblay, Pierre / Guihard, Matthieu / Gaudet, Simon / Chicoine, Martin / Lavoie, Christian / Desjardins, Patrick / Schiettekatte, François et al. | 2013
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GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivationHwang, Ya-Hsi / Liu, Lu / Velez, Camilo / Ren, Fan / Gila, Brent P. / Hays, David / Pearton, Stephen J. / Lambers, Eric / Kravchenko, Ivan I. / Lo, Chien-Fong et al. | 2013
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Erratum: “Resonant coupling for contactless measurement of carrier lifetime” [J. Vac. Sci. Technol. B 31, 04D113 (2013)]Ahrenkiel, Richard K. et al. | 2013
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Organic–inorganic hybrid gate dielectric for solution-processed ZnO thin film transistorsOh, Ji-Young / Lim, Sang-Chul / Yeon Kim, Joo / Am Kim, Chul / Cho, Kyoung-Ik / Deok Ahn, Seong / Bon Koo, Jae / Yoon, Sung-Min et al. | 2013
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Low-temperature plasmas in carbon nanostructure synthesisLevchenko, Igor / Keidar, Michael / Xu, Shuyan / Kersten, Holger / Ostrikov, Kostya (Ken) et al. | 2013
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Determining local residual stresses from high resolution wafer geometry measurementsGong, Jie / Vukkadala, Pradeep / Sinha, Jaydeep K. / Turner, Kevin T. et al. | 2013
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High current hybrid single walled carbon nanotube/graphene field emittersLeberl, Daniela / Hensel, Bernhard / Kapitza, Heinrich / Zeininger, Heinrich / Tedde, Sandro F. et al. | 2013