Electroluminescence from amorphous silicon carbide heterojunctions under reverse biased conditions (English)
National licence
- New search for: Alvarez, F.
- New search for: Fragnito, H. L.
- New search for: Chambouleyron, I.
- New search for: Alvarez, F.
- New search for: Fragnito, H. L.
- New search for: Chambouleyron, I.
In:
Journal of Applied Physics
;
63
, 1
;
244-246
;
1988
- Article (Journal) / Electronic Resource
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Title:Electroluminescence from amorphous silicon carbide heterojunctions under reverse biased conditions
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Contributors:
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Published in:Journal of Applied Physics ; 63, 1 ; 244-246
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Publisher:
- New search for: American Institute of Physics
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Publication date:1988-01-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 63, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Electron energy deposition in atomic oxygenSlinker, S. P. / Taylor, R. D. / Ali, A. W. et al. | 1988
- 11
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A lithium‐fluoride flashover ion source cleaned with a glow discharge and irradiated with vacuum‐ultraviolet radiationBurns, E. J. T. / Woodworth, J. R. / Bieg, K. W. / Mehlhorn, T. A. / Stygar, W. A. / Sweeney, M. A. et al. | 1988
- 28
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Analysis and observation of current spreading and current concentrating effects in constricted double‐heterojunction lasersDu, Guotong / Xiao, Jianwei / Gao, Dingsan et al. | 1988
- 32
-
Preionization electron density and ion decay measurements in an x‐ray preionized rare‐gas‐fluoride laserOsborne, M. R. et al. | 1988
- 38
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Microphone‐detected ion‐acoustic signal from metalsDio´szeghy, T. / Bi´ro´, T. / Szo˝kefalvi‐Nagy, Z. et al. | 1988
- 43
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Relation between variance and sample duration of 1/f noise signalsKleinpenning, T. G. M. / de Kuijper, A. H. et al. | 1988
- 46
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Time‐resolved investigations of laser‐induced shock waves in water by use of polyvinylidenefluoride hydrophonesSchoeffmann, H. / Schmidt‐Kloiber, H. / Reichel, E. et al. | 1988
- 52
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Effect of temperature on the uniform field breakdown strength of electronegative gasesChristophorou, L. G. / Mathis, R. A. / Hunter, S. R. / Carter, J. G. et al. | 1988
- 60
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The Faraday dark space of a He glow dischargeKagan, Yu. M. / Cohen, C. / Avivi, P. et al. | 1988
- 64
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Si‐ion implantation in GaAs and AlxGa1−xAsAdachi, Sadao et al. | 1988
- 68
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Low‐temperature annealing of As‐implanted GeHattangady, S. V. / Fountain, G. G. / Nicollian, E. H. / Markunas, R. J. et al. | 1988
- 75
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Effects of energy straggling on surface analysis with fast ion beamsKawano, Akira / Kido, Yoshiaki et al. | 1988
- 80
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Temperature and pulse shape dependence of the switching behavior in ferroelectric liquid crystalsPatel, J. S. / Goodby, J. W. et al. | 1988
- 87
-
Raman scattering measurement of silicon‐on‐insulator substrates formed by high‐dose oxygen‐ion implantationTakahashi, Jun‐ichi / Makino, Takahiro et al. | 1988
- 92
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Photothermal wave imaging of metal‐oxide‐semiconductor field‐effect transistor structuresMandelis, Andreas / Williams, Andrew / Siu, Edwin K. M. et al. | 1988
- 99
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Shock‐induced melting and shear banding in single‐crystal NaClSchmitt, Douglas R. / Ahrens, Thomas J. / Svendsen, Bob et al. | 1988
- 107
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Structural properties of bismuth‐bearing semiconductor alloysBerding, M. A. / Sher, A. / Chen, A.‐B. / Miller, W. E. et al. | 1988
- 116
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Boron diffusion in silicon at high concentrationsOrr Arienzo, W. A. / Glang, R. / Lever, R. F. / Lewis, R. K. / Morehead, F. F et al. | 1988
- 121
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Discrimination between conduction and polarization processes in an ac electric fieldDoi, Akira et al. | 1988
- 126
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Strain distribution in thin aluminum films using x‐ray depth profilingDoerner, M. F. / Brennan, S. et al. | 1988
- 132
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Hg content and thermal stability of the anodic sulfide films on Hg1−xCdxTe investigated by 30–40‐MeV O5+ ion backscatteringIppo¯shi, T. / Takita, K. / Murakami, K. / Masuda, K. / Kudo, H. / Seki, S. et al. | 1988
- 136
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Number of oxygen atoms in a thermal donor in siliconSchroder, D. K. / Chen, C. S. / Kang, J. S. / Song, X. D. et al. | 1988
- 142
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Resonant tunneling in heterostructures: Numerical simulation and qualitative analysis of the current densityCollins, S. / Lowe, David / Barker, J. R. et al. | 1988
- 150
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Interface studies and electrical properties of plasma sulfide layers on n‐type InPKlopfenstein, P. / Bastide, G. / Rouzeyre, M. / Gendry, M. / Durand, J. et al. | 1988
- 159
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Microwave response of thin‐film superconductorsSridhar, S. et al. | 1988
- 167
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In situ observation of interactions between Bloch walls and local crystalline defectsHartmann, U. et al. | 1988
- 172
-
Magnetocrystalline anisotropy in Y1−xPrxCo5Pareti, L. / Moze, O. / Solzi, M. / Bolzoni, F. et al. | 1988
- 176
-
Theoretical study of irreversible jumps of 180° domain well separating infinitely long domainsRoman, Andrzej et al. | 1988
- 183
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Correlation of the concentration of the carbon‐associated radiation damage levels with the total carbon concentration in siliconFerenczi, G. / Londos, C. A. / Pavelka, T. / Somogyi, M. / Mertens, A. et al. | 1988
- 190
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Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structuresKash, K. / Tell, B. / Grabbe, P. / Dobisz, E. A. / Craighead, H. G. / Tamargo, M. C. et al. | 1988
- 195
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High dose Fe implantation of graphite at elevated temperatureLusnikov, A. / Ohana, I. / Dresselhaus, M. S. / Withrow, S. P. et al. | 1988
- 198
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Modeling of pyrolytic laser‐assisted chemical vapor deposition: Mass transfer and kinetic effects influencing the shape of the depositSkouby, D. C. / Jensen, K. F. et al. | 1988
- 207
-
Hydrocarbon dissociation on palladium studied with a hydrogen sensitive Pd‐metal‐oxide‐semiconductor structureDannetun, H. / Lundstro¨m, I. / Petersson, L.‐G. et al. | 1988
- 216
-
Recent developments in gravity gradiometry from the Space‐Shuttle‐borne tethered satellite systemLorenzini, Enrico C. / Gullahorn, Gordon E. / Fuligni, Franco et al. | 1988
- 224
-
Injection currents in insulators: Exact resultsTannous, C. / Yelon, A. et al. | 1988
- 225
-
Microstructural investigation of the high‐Tc superconductor YBa2Cu3Ox with a scanning tunneling microscopeLaiho, R. / Heikkila¨, L. / Snellman, H. et al. | 1988
- 228
-
Refractive indices and the exponential optical absorption for Hg1−xCdxTe (0.2<x<0.3)Toyoda, Taro et al. | 1988
- 231
-
Two‐dimensional effects in two‐terminal n+‐p‐n+ devices fabricated by planar technologyJain, S. C. / Staszak, Z. J. / Musallam, A. / Mattson, R. H. et al. | 1988
- 234
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Time and temperature influence on surface index change in K+‐Na+ ion exchanged optical waveguidesDe Bernardi, C. / Malvicino, C. / Morasca, S. / Morra, M. et al. | 1988
- 236
-
Formation of PtSi in the presence of W and AlChang, Chin‐An et al. | 1988
- 239
-
A photoacoustic study of photoinjection processes in double‐layered organic photoconductorsKanemitsu, Yoshihiko / Imamura, Shunji et al. | 1988
- 241
-
Optical and structural characteristics of Al2O3 films deposited by the reactive ionized cluster beam methodHashimoto, H. / Levenson, L. L. / Usui, H. / Yamada, I. / Takagi, T. et al. | 1988
- 244
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Electroluminescence from amorphous silicon carbide heterojunctions under reverse biased conditionsAlvarez, F. / Fragnito, H. L. / Chambouleyron, I. et al. | 1988
- 246
-
Rh4Si5 formation in the multilayer geometry: Explosive reaction versus nucleation‐controlled kineticsFloro, Jerrold A. et al. | 1988
- 248
-
Broad‐area semiconductor lasers with gain‐length variation for lateral mode control: The bow‐tie geometry laserSheem, S. K. / Vojak, B. A. et al. | 1988
- 250
-
Reliability of planar InGaAs/InP photodiodes passivated with boro‐phospho‐silicate glassMartinelli, Ramon U. / Enstrom, Ronald E. et al. | 1988
- 253
-
On gain scaling of plasma recombination lasersKhare, Alika / Thareja, R. K. et al. | 1988
- 254
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A new method for ion charge‐state analysisBrown, I. G. / Kelly, J. C. et al. | 1988