On the Role of AlO x Thickness in AlO x /SiN y : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si (English)
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- New search for: Schmid, Andreas
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- New search for: Schmid, Andreas
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Title:On the Role of AlO x Thickness in AlO x /SiN y : H Layer Stacks Regarding Light- and Elevated Temperature-Induced Degradation and Hydrogen Diffusion in c-Si
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Contributors:Schmid, Andreas ( author ) / Fischer, Christian ( author ) / Skorka, Daniel ( author ) / Herguth, Axel ( author ) / Winter, Clemens ( author ) / Zuschlag, Annika ( author ) / Hahn, Giso ( author )
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Publication date:2021-01-01
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Remarks:IEEE Journal of Photovoltaics ; 11 (2021), 4. - S. 967-973. - IEEE. - ISSN 2156-3403. - eISSN 2156-3403
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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