X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal (English)
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- New search for: Holý, V.
- New search for: Stangl, J.
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- New search for: Lechner, R.T.
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- New search for: Grützmacher, D.
- New search for: Holý, V.
- New search for: Stangl, J.
- New search for: Fromherz, T.
- New search for: Lechner, R.T.
- New search for: Wintersberger, E.
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- Article (Journal) / Electronic Resource
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Title:X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal
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Contributors:Holý, V. ( author ) / Stangl, J. ( author ) / Fromherz, T. ( author ) / Lechner, R.T. ( author ) / Wintersberger, E. ( author ) / Bauer, G. ( author ) / Dais, C. ( author ) / Müller, E. ( author ) / Grützmacher, D. ( author )
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Publication date:2009-01-01
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Remarks:Physical review / B 79, 035324 (2009). doi:10.1103/PhysRevB.79035324
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
- New search for: 530
- Further information on Dewey Decimal Classification
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Keywords:info:eu-repo/classification/ddc/530 , J , atomic force microscopy , elemental semiconductors , Ge-Si alloys , long-range order , molecular beam epitaxial growth , semiconductor quantum dots , semiconductor thin films , short-range order , silicon , sputter etching , synchrotron radiation , ultraviolet lithography , X-ray diffraction
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Classification:
DDC: 530 -
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