Study of silicon nitride inner spacer formation in process of gate-all-around nano-transistors (English)
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Title:Study of silicon nitride inner spacer formation in process of gate-all-around nano-transistors
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Contributors:
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Publication date:2020-01-01
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Remarks:Scopus 2-s2.0-85083962188
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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DDC: 600 -
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