Silicium polycristallin (French)
- New search for: Equer, Bernard
- New search for: Pinard, Pierre
- New search for: Rocher, André
- New search for: Rodot, Michel
- New search for: Equer, Bernard
- New search for: Pinard, Pierre
- New search for: Rocher, André
- New search for: Rodot, Michel
In:
Revue de Physique Appliquée
;
22
, 7
;
511
;
1987
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Silicium polycristallin
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Contributors:Equer, Bernard ( author ) / Pinard, Pierre ( author ) / Rocher, André ( author ) / Rodot, Michel ( author )
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Published in:Revue de Physique Appliquée ; 22, 7 ; 511
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Publisher:
- New search for: EDP Sciences
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Publication date:1987-07-01
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Size:1 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:French
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Keywords:Crystallization , Bicrystal , Materials science , Physics , Polycrystal , Electrical properties , Condensed matter physics , Deep level transient spectrometry , Transmission electron microscopy , Passivation , Defect level , Photovoltaic effect , Silicon , Microstructure , Experimental study , Impurity , Semiconductor materials , Grain boundary , Solar cell
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Source:
Table of contents – Volume 22, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 473
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Etude de l'influence de l'épaisseur de la région n pour l'optimisation de la tenue en tension des structures p-n-n+Boisson, V. / Le Helley, M. / Chante, J.P. et al. | 1987
- 477
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Recent developments of the two-dimensional technological process simulator OSIRISGuillemot, N. / Pananakakis, G. / Chenevier, P. et al. | 1987
- 487
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Etude expérimentale et modélisation d'un stockage thermique de longue durée en lit de cailloux enterré, couplé à des capteurs solaires à airDang Vu, C. / Delcambre, B. et al. | 1987
- 505
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Static response of miniature capacitive pressure sensors with square or rectangular silicon diaphragmBlasquez, G. / Naciri, Y. / Blondel, P. / Ben Moussa, N. / Pons, P. et al. | 1987
- 511
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Silicium polycristallinEquer, Bernard / Pinard, Pierre / Rocher, André / Rodot, Michel et al. | 1987
- 513
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Polycrystalline siliconEquer, Bernard / Pinard, Pierre / Rocher, André / Rodot, Michel et al. | 1987
- 515
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Czochralski growth of silicon bicrystalsAubert, J.J. / Bacmann, J.J. et al. | 1987
- 519
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Etude de la solidification directionnelle en creuset du silicium en vue d'un usage solaireRevel, G. / Pastol, J.-L. / Hania, D. / Nguyen Dinh Huynh et al. | 1987
- 529
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The Polyx photovoltaic technology: progress and prospectsFally, J. / Fabre, E. / Chabot, B. et al. | 1987
- 535
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Le silicium polycristallin Polix : élaboration, propriétés et performancesNouet, G. / Lay, P. / Chermant, J.L. et al. | 1987
- 549
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Solidification of polycrystalline silicon ingots : simulation and characterization of the microstructureLay, P. / Nouet, G. / Coster, M. / Chermant, L. / Chermant, J.L. et al. | 1987
- 557
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Le ruban de silicium E.P.R.: élaboration et mise au point d'un dispositif d'analyse des contraintes résiduellesChambonnet, D. / Gauthier, R. / M'Ghaieth, R. / Pinard, P. et al. | 1987
- 563
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Atomic structure of grain boundaries in semiconductorsBourret, A. / Bacmann, J.J. et al. | 1987
- 569
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Deformation mechanisms of Σ = 9 bicrystals of siliconEl Kajbaji, M. / Thibault-Desseaux, J. / Martinez-Hernandez, M. / Jacques, A. / George, A. et al. | 1987
- 579
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Electronic properties of grain boundaries in semiconductorsBourgoin, J.C. / Mauger, A. / Lannoo, M. et al. | 1987
- 585
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Les propriétés électriques de la macle Σ = 25 du silicium et leur évolution en fonction de traitements de recuitBroniatowski, A. et al. | 1987
- 591
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Origine structurale et chimique de l'activité électrique des joints de grains dans le siliciumRocher, A. et al. | 1987
- 597
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EBIC and conductance measurements in poly- and bicrystalline siliconBary, A. / Mercey, B. / Poullain, G. / Chermant, J.L. / Nouet, G. et al. | 1987
- 603
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Texture analysis of silicon with an heterogeneous morphology used for the photovoltaic conversion by neutron diffractionAndonov, P. / Dervin, P. / Esling, C. et al. | 1987
- 613
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On the origin of the electrical activity in silicon grain boundariesMaurice, J.-L. et al. | 1987
- 623
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Impurity-induced microstructure of grain boundaries in cast silicon. Incidence on electrical propertiesLaval, J.Y. / Maurice, J.L. / Cabanel, C. et al. | 1987
- 631
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Recombination effects and impurity segregation at grain boundaries in polycrystalline siliconPizzini, S. / Sandrinelli, A. / Beghi, M. / Narducci, D. / Fabbri, P.L. et al. | 1987
- 637
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Influence and passivation of extended crystallographic defects in polycrystalline siliconMartinuzzi, S. et al. | 1987
- 645
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Improvement of electron diffusion lengths in polycrystalline silicon wafers by aluminiumMartinuzzi, S. / Poitevin, H. / Zehaf, M. / Zurletto, C. et al. | 1987
- 649
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Hydrogen ion passivation of multicrystalline silicon solar cellsMuller, J.C. / Barhdadi, A. / Ababou, Y. / Siffert, P. et al. | 1987
- 655
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Impurity-defect interaction in polycrystalline silicon for photovoltaic applications. The role of hydrogenChari, A. / de Mierry, P. / Menikh, A. / Aucouturier, M. et al. | 1987
- 663
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Role of oxygen in surface segregation of metal impurities in silicon poly-and bicrystalsAmarray, E. / Deville, J.P. et al. | 1987
- 671
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Microstructure effect on the HNO3-HF etching of LPCVD boron-doped polycrystalline siliconMansour-Bahloul, F. / Bielle-Daspet, D. / Peyrelavigne, A. et al. | 1987
- 677
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3D-Modelling of polycrystalline silicon solar cellsDugas, J. / Oualid, J. et al. | 1987
- 687
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Thin film solar cells using impure polycrystalline siliconRodot, M. / Barbe, M. / Bouree, J.E. / Perraki, V. / Revel, G. / Kishore, R. / Pastol, J.L. / Mertens, R. / Caymax, M. / Eyckmans, M. et al. | 1987
- 695
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Polyx multicrystalline silicon solar cells processed by PF+ 5 unanalysed ion implantation and rapid thermal annealingAdekoya, W.O. / Li Jin Chai / Ajaka, M. / Muller, J.C. / Siffert, P. et al. | 1987
- 705
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Revue de livres| 1987