Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene–phenylene based light emitting diodes (English)
- New search for: Romero, B.
- New search for: Arredondo, B.
- New search for: Alvarez, A.L.
- New search for: Mallavia, R.
- New search for: Salinas, A.
- New search for: Quintana, X.
- New search for: Otón, J.M.
- New search for: Romero, B.
- New search for: Arredondo, B.
- New search for: Alvarez, A.L.
- New search for: Mallavia, R.
- New search for: Salinas, A.
- New search for: Quintana, X.
- New search for: Otón, J.M.
In:
Solid-State Electronics
;
53
, 2
;
211-217
;
2008
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene–phenylene based light emitting diodes
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Contributors:Romero, B. ( author ) / Arredondo, B. ( author ) / Alvarez, A.L. ( author ) / Mallavia, R. ( author ) / Salinas, A. ( author ) / Quintana, X. ( author ) / Otón, J.M. ( author )
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Published in:Solid-State Electronics ; 53, 2 ; 211-217
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2008-11-16
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 53, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 117
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Maximum powers of low-loss series–shunt FET RF switchesYang, Z. / Hu, X. / Yang, J. / Simin, G. / Shur, M. / Gaska, R. et al. | 2008
- 120
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Red electroluminescent devices based on rubrene derivative in 4,4′-N,N′-dicarubreneazole-biphenyl host and its application in white light emitting device for lighting purposeLi, Tianle / Li, Wenlian / Li, Xiao / Han, Liangliang / Chu, Bei / Li, Mingtao / Hu, Zhizhi / Zhang, Zhiqiang et al. | 2008
- 120
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Red electroluminescent devices based on rubrene derivative in 4,4prime-N,Nprime-dicarubreneazole-biphenyl host and its application in white light emitting device for lighting purposeLi, T. / Li, W. / Li, X. / Han, L. / Chu, B. / Li, M. / Hu, Z. / Zhang, Z. et al. | 2009
- 124
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A novel vertical channel self-aligned split-gate flash memoryWu, Dake / Zhou, Falong / Huang, Ru / Li, Yan / Cai, Yimao / Guo, Ao / Zhang, Xing / Wang, Yangyuan et al. | 2008
- 127
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Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFETCathignol, Augustin / Bordez, Samuel / Cros, Antoine / Rochereau, Krysten / Ghibaudo, Gérard et al. | 2008
- 134
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Raman study of Formula Not Shown quantum dots: A dielectric continuum approachZhong, Q. H. / Liu, C. H. et al. | 2009
- 134
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Raman study of quantum dots: A dielectric continuum approachZhong, Qing-Hu / Liu, Cui-Hong et al. | 2008
- 134
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Raman study of quantum dots: A dielectric continuum approachZhong, Qing-Hu et al. | 2009
- 140
-
An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective massYuan, Yu / Yu, Bo / Song, Jooyoung / Taur, Yuan et al. | 2008
- 145
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Analysis of the impact of the drain-junction tunneling effect on a microwave MOSFET from S-parameter measurementsTorres-Rios, Emmanuel / Torres-Torres, Reydezel / Gutiérrez-D, Edmundo A. et al. | 2008
- 150
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Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETsNa, K.-I. / Cristoloveanu, S. / Bae, Y.-H. / Patruno, P. / Xiong, W. / Lee, J.-H. et al. | 2008
- 154
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Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTsChen, Ke-Shian / Chang, Edward Yi / Lin, Chia-Ching / Lee, Cheng-Shih et al. | 2008
- 160
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New modes of THz generation by low-temperature-grown GaAsSbHargreaves, S. / Bignell, L.J. / Lewis, R.A. / Sigmund, J. / Hartnagel, H.L. et al. | 2008
- 166
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Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDsTörmä, P.T. / Svensk, O. / Ali, M. / Suihkonen, S. / Sopanen, M. / Odnoblyudov, M.A. / Bougrov, V.E. et al. | 2008
- 170
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A model for the C–V characteristics of the metal–ferroelectric–insulator–semiconductor structureZhang, Jun Jie / Sun, Jing / Zheng, Xue Jun et al. | 2008
- 176
-
Efficient electron transfers in ZnO nanorod arrays with N719 dye for hybrid solar cellsThitima, Rattanavoravipa / Patcharee, Chareonsirithavorn / Takashi, Sagawa / Susumu, Yoshikawa et al. | 2008
- 181
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RF performance of GaAs pHEMT switches with various upper/lower δ-doped ratio designsChiu, Hsien-Chin / Fu, Jeffrey S. / Chen, Chung-Wen et al. | 2008
- 181
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RF performance of GaAs pHEMT switches with various upper/lower d-doped ratio designsChiu, H. C. / Fu, J. S. / Chen, C. W. et al. | 2009
- 185
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Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTsXiao, Dongping / Schreurs, Dominique / De Raedt, W. / Derluyn, J. / Germain, M. / Nauwelaers, B. / Borghs, G. et al. | 2008
- 190
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On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)Chen, Tzu-Pin / Lee, Chi-Jhung / Lour, Wen-Shiung / Guo, Der-Feng / Tsai, Jung-Hui / Liu, Wen-Chau et al. | 2008
- 195
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Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon modelsLou, Lifang / Liou, Juin J. / Dong, Shurong / Han, Yan et al. | 2008
- 204
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Passivation of 4H–SiC Schottky barrier diodes using aluminum based dielectricsKumta, A. / Rusli / Xia, J.H. et al. | 2008
- 211
-
Influence of electrical operating conditions and active layer thickness on electroluminescence degradation in polyfluorene–phenylene based light emitting diodesRomero, B. / Arredondo, B. / Alvarez, A.L. / Mallavia, R. / Salinas, A. / Quintana, X. / Otón, J.M. et al. | 2008
- 218
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A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETsHariharan, Venkatnarayan / Vasi, Juzer / Ramgopal Rao, V. et al. | 2008
- 225
-
Drain bias dependent bias temperature stress instability in a-Si:H TFTTang, Z. / Park, M.S. / Jin, S.H. / Wie, C.R. et al. | 2008
- 234
-
Parameter determination of Schottky-barrier diode model using differential evolutionWang, Kaier / Ye, Meiying et al. | 2008
- 241
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Photocapacitance study at p–i–n photodiode by numerical C–V integrationKavasoglu, A. Sertap / Kavasoglu, Nese / Oktik, Sener et al. | 2008
- 246
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Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surfaceFan, Ching-Lin / Yang, Tsung-Hsien / Chiu, Ping-Cheng / Huang, Cheng-Han / Lin, Cheng-I et al. | 2008
- IFC
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Editorial Board| 2009