Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxy (English)
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In:
Journal of Crystal Growth
;
95
, 1-4
;
296-300
;
1989
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxy
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Contributors:Li, Aizhen ( author ) / Kim, H.K. ( author ) / Jeong, J.C. ( author ) / Wong, D. ( author ) / Zhao, J.H. ( author ) / Fang, Z.-Q. ( author ) / Schlesinger, T.E. ( author ) / Milnes, A.G. ( author )
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Published in:Journal of Crystal Growth ; 95, 1-4 ; 296-300
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Publisher:
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Publication date:1989-01-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 95, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Current state and future challenge in Molecular Beam Epitaxy (MBE) researchCho, A.Y. et al. | 1989
- 11
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Current understanding of growth mechanisms in III–V MBEFoxon, C.T. et al. | 1989
- 17
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Migration-enhanced epitaxy of GaAs and AlGaAsHorikoshi, Yoshiji / Kawashima, Minoru et al. | 1989
- 23
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On the origin of RHEED intensity oscillationsPetrich, G.S. / Pukite, P.R. / Wowchak, A.M. / Whaley, G.J. / Cohen, P.I. / Arrott, A.S. et al. | 1989
- 28
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Influence of surface morphology upon recovery kinetics during interrupted epitaxial growthClarke, S. / Vvedensky, D.D. / Ricketts, M.W. et al. | 1989
- 32
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Low-temperature selective growth of GaAs by alternately supplying molecular beam epitaxyYokoyama, S. / Oogi, J. / Yui, D. / Kawabe, M. et al. | 1989
- 35
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Surface segregation of third-column atoms in III–V ternary arsenidesHouzay, F. / Moison, J.M. / Guille, C. / Barthe, F. / Van Rompay, M. et al. | 1989
- 38
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TEM investigation of modulated structures and ordered structures in InAlAs crystals grown on (001) InP substrates by molecular beam epitaxyUeda, O. / Fujii, T. / Nakada, Y. / Yamada, H. / Umebu, I. et al. | 1989
- 43
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Atomic ordering in GaAs0.5Sb0.5 grown by molecular beam epitaxyOtsuka, N. / Ihm, Y.E. / Hirotsu, Y. / Klem, J. / Morkoç, H. et al. | 1989
- 48
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Simulation of MBE growthBeeby, J.L. et al. | 1989
- 51
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Effects of growth interruption on structure of MBE grown GaAs/AlAs hetero-interfaces studied by x-ray diffractionKoshiba, S. / Nanao, S. / Tsuda, O. / Watanabe, Y. / Sakurai, Y. / Sakaki, H. / Kawata, H. / Ando, M. et al. | 1989
- 55
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Simulation of epitaxial growth over patterned substratesOhtsuka, Mitsuru / Suzuki, Akira et al. | 1989
- 60
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Electron mobility and roughness scattering in Potential Inserted Quantum Wells (PI-QWs)Noda, T. / Tanaka, M. / Sakaki, H. et al. | 1989
- 64
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Near surface transition layer model of MBE growthHerman, M.A. et al. | 1989
- 66
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Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasersMeier, H.P. / Van Gieson, E. / Epperlein, P.W. / Harder, C. / Walter, W. / Krahl, M. / Bimberg, D. et al. | 1989
- 71
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Anisotropic surface migration of Ga atoms on GaAs (001)Ohta, Kimihiro / Kojima, Takeshi / Nakagawa, Tadashi et al. | 1989
- 75
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Interface roughness and confined LO phonons in quantum wellsFasol, G. / Tanaka, M. / Sakaki, H. / Horikoshi, Y. et al. | 1989
- 79
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Electronic and optical devices with gallium arsenide on silicon prepared by MBEMorkoç, H. et al. | 1989
- 87
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Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100) Si grown by migration-enhanced epitaxyStolz, W. / Horikoshi, Y. / Naganuma, M. / Nozawa, K. et al. | 1989
- 91
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Low-temperature cleaning of Si and growth of GaAs on Si by hydrogen plasma-assisted metalorganic molecular-beam epitaxyKunitsugu, Y. / Suemune, I. / Tanaka, Y. / Kan, Y. / Yamanishi, M. et al. | 1989
- 96
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GaAs on Si and related systems: Problems and prospectsKroemer, Herbert / Liu, Tak-Yu / Petroff, Pierre M. et al. | 1989
- 103
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Initial stage of epitaxy of GaAs on SiKawabe, M. / Shiraishi, T. et al. | 1989
- 107
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Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxyYao, Takafumi / Nakao, Hiroshi / Kawanami, Hitoshi / Toba, Ryuichi et al. | 1989
- 113
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Growth and characterization of GaAs films on porous SiHasegawa, Shigehiko / Maehashi, Kenzo / Nakashima, Hisao / Ito, Toshimichi / Hiraki, Akio et al. | 1989
- 117
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Molecular beam epitaxy of single domain InP films directly grown on Si(001) substratesKawanami, Hitoshi / Hayashi, Yutaka et al. | 1989
- 121
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From chemical vapor epitaxy to chemical beam epitaxyTsang, W.T. et al. | 1989
- 132
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Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopyIshii, H. / Ohno, H. / Matsuzaki, K. / Hasegawa, H. et al. | 1989
- 136
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Surface chemical kinetics during the growth of GaAs by chemical beam epitaxyChiu, T.H. / Cunningham, J.E. / Robertson, A. Jr. et al. | 1989
- 140
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Selective-area epitaxy of GaAs by Molecular-Beam Epitaxy (MBE) and metalorganic MBE with excimer laser irradiationTu, C.W. / Donnelly, V.M. / Beggy, J.C. / McCrary, V.R. / McCaulley, J.A. et al. | 1989
- 142
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Photo-assisted chemical beam epitaxy of GaAsNagata, K. / Iimura, Y. / Aoyagi, Y. / Namba, S. / Den, S. et al. | 1989
- 145
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Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyYamada, Takumi / Tokumitsu, Eisuke / Saito, Koki / Akatsuka, Takeshi / Miyauchi, Motoya / Konagai, Makoto / Takahashi, Kiyoshi et al. | 1989
- 150
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Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxyBenchimol, J.L. / Alexandre, F. / Gao, Y. / Alaoui, F. et al. | 1989
- 154
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Carbon incorporation in MOMBE-grown Ga0.47In0.53AsKamp, M. / Contini, R. / Werner, K. / Heinecke, H. / Weyers, M. / Lüth, H. / Balk, P. et al. | 1989
- 158
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MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSbKaneko, Tadaaki / Asahi, Hajime / Okuno, Yasutoshi / Gonda, Shun-ichi et al. | 1989
- 163
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Growth of (AlIn)P/GaAs single quantum well structure on (001) GaAs by gas source MBE using AsH3 and PH3 gasNagao, Satoru / Inoue, Yuichi / Katoh, Masanori / Shimoyama, Kenji / Gotoh, Hideki et al. | 1989
- 167
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Selective area growth of indium phosphide based heterostructures by metalorganic molecular beam epitaxyAndrews, D.A. / Rejman-Greene, M.A.Z. / Wakefield, B. / Davies, G.J. et al. | 1989
- 171
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Growth mechanism of In1−xGaxP and In1−xAlxP in metalorganic molecular beam epitaxyOzasa, Kazunari / Yuri, Masaaki / Tanaka, Shigehisa / Matsunami, Hiroyuki et al. | 1989
- 176
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Gas source MBE growth of InPMorishita, Yoshitaka / Maruno, Shigemitsu / Gotoda, Mitsunobu / Nomura, Yoshinori / Ogata, Hitoshi et al. | 1989
- 181
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Sn doping for InP and InGaAs grown by metalorganic molecular beam epitaxy using tetraethyltinKawaguchi, Yoshihiro / Nakashima, Kiichi et al. | 1989
- 185
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Very high purity GaAs grown by gas source molecular beam epitaxyCunningham, J.E. / Timp, G. / Chiu, T.H. / Ditzenberger, J.A. / Tsang, W.T. / Sergent, A.M. / Lang, D.V. et al. | 1989
- 189
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Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1−xAs/N-In0.52Al0.48As heterostructuresSasa, S. / Nakata, Y. / Sugiyama, Y. / Fujii, T. / Miyauchi, E. et al. | 1989
- 193
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Growth phenomena and characteristics of strained InxGa1−xAs on GaAsPamulapati, J. / Berger, P. / Chang, K. / Oh, J. / Chen, Yi / Singh, J. / Bhattacharya, P. / Gibala, R. et al. | 1989
- 197
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Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAsEvans, Keith R. / Stutz, C.E. / Lorance, D.K. / Jones, R.L. et al. | 1989
- 201
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Effects of the elastic strains and relaxations on In-incorporation in (Al,In)As pseudomorphic layers grown by molecular beam epitaxyTurco, F. / Mbaye, A.A. / Massies, J. et al. | 1989
- 202
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Structural and optical studies on molecular beam epitaxially grown (InAs)m(AlAs)m and (InAs)m(GaAs)m short-period strained layer superlatticesNishi, Kenichi / Anan, Takayoshi / Ide, Yuichi / Onabe, Kentaro et al. | 1989
- 206
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High-quality AlGaAs/GaAs quantum well with a short period (InGaAs)(GaAs) strained superlattice buffer layerSato, F. / Imamoto, H. / Imanaka, K. / Shimura, M. et al. | 1989
- 210
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MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applicationsMatsushima, Yuichi / Kato, Hiroshi / Utaka, Katsuyuki / Sakai, Kazuo et al. | 1989
- 215
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Hot carrier photoluminescence from strained InxGa1−xAs/GaAs single quantum wellsAndersson, T.G. / Chen, Z.-G. / Xu, Z.-Y. / Xu, J.-Z. / Ge, W.-K. et al. | 1989
- 220
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MBE growth of pseudomorphic GaAsySb1−y in a GaAs host latticeHobson, G.I. / Khamsehpour, B. / Singer, K.E. / Truscott, W.S. et al. | 1989
- 224
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Rheed and x-ray characterization of InGaAs/GaAs grown by MBEFujita, Shizuo / Nakaoka, Yasushi / Uemura, Tetsuya / Tabuchi, Masao / Noda, Susumu / Takeda, Yoshikazu / Sasaki, Akio et al. | 1989
- 228
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Interfacial studies and electrical characterisation of heteroepitaxial InSb on GaAs (100) grown by MBEMcConville, C.F. / Whitehouse, C.R. / Williams, G.M. / Cullis, A.G. / Ashley, T. / Skolnick, M.S. / Brown, G.T. / Courtney, S.J. et al. | 1989
- 235
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Heteroepitaxy of InAs quantum wellsMunekata, H. / Smith, T.P. III / Chang, L.L. et al. | 1989
- 240
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Stress relief in patterned GaAs grown on mismatched substratesYacobi, B.G. / Zemon, S. / Jagannath, C. / Sheldon, P. et al. | 1989
- 245
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Growth and characterization of in-situ (In,Ga)As ohmic contacts to n-GaAsWright, S.L. / Marks, R.F. / Marshall, E.D. / Shih, Y.C. / Young, A.B. et al. | 1989
- 247
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Growth and doping of heterostructures for high electron mobilitiesGossard, Arthur C. / English, John H. / Miller, Mark / Simes, Robert J. et al. | 1989
- 250
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MBE growth of two-dimensional electron system with extremely low disorderShayegan, M. / Goldman, V.J. / Sajoto, T. / Santos, M. / Jiang, C. / Ito, H. et al. | 1989
- 253
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Spatial localization of Si in selectively δ-doped AlxGa1−xAs/GaAs heterostructures for high mobility and density realizationCunningham, J.E. / Timp, G. / Chang, A.M. / Chiu, T.H. / Jan, W. / Schubert, E.F. / Tsung, W.T. et al. | 1989
- 257
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Si migration effects in GaAs/(Al,Ga)As heterojunction and δ-doped structuresHarris, J.J. / Beall, R.B. / Clegg, J.B. / Foxon, C.T. / Battersby, S.J. / Lacklison, D.E. / Duggan, G. / Hellon, C.M. et al. | 1989
- 260
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Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structuresPetroff, P.M. / Gaines, J. / Tsuchiya, M. / Simes, R. / Coldren, L. / Kroemer, H. / English, J. / Gossard, A.C. et al. | 1989
- 266
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One- and zero-dimensional systems: Fabrication and characterizationHong, J.M. / Smith, T.P. III / Lee, K.Y. / Knoedler, C.M. / Laux, S.E. / Kern, D.P. / Esaki, L. et al. | 1989
- 269
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The meandering of steps on GaAs(100)Pukite, P.R. / Petrich, G.S. / Batra, S. / Cohen, P.I. et al. | 1989
- 273
-
Surface diffusion during MBE growth of GaAs-AlGaAs single quantum wells on vicinal surfacesKanamoto, K. / Fujiwara, K. / Tokuda, Y. / Tsukada, N. / Ishii, M. / Nakayama, T. et al. | 1989
- 277
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Optical properties of thermally interdiffused MBE-grown GaAs/GaAlAs quantum wellsLeier, H. / Rothfritz, H. / Forchel, A. / Weimann, G. et al. | 1989
- 281
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Lattice-matched and lattice-mismatched growth on novel GaAs substrate orientationsUppal, P.N. / Ahearn, J.S. / Svensson, S.P. / Herring, R. et al. | 1989
- 288
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X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substratesAuvray, P. / Baudet, M. / Regreny, A. et al. | 1989
- 292
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Comparison of RHEED during MBE growth and the quality of AlGaAs:Si grown on (100) and misoriented GaAs substratesLee, H. / Nouri, N. / Colvard, C. / Ackley, D. et al. | 1989
- 296
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Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxyLi, Aizhen / Kim, H.K. / Jeong, J.C. / Wong, D. / Zhao, J.H. / Fang, Z.-Q. / Schlesinger, T.E. / Milnes, A.G. et al. | 1989
- 301
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Influence of As4/Ga flux ratio on Be incorporation in heavily doped GaAs grown by molecular beam epitaxyPao, Y.C. / Franklin, J. / Harris, J.S. Jr. et al. | 1989
- 305
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Molecular beam epitaxy AlGaAs/GaAs grown in the presence of hydrogenPao, Y.C. / Liu, D. / Harris, J.S. Jr. et al. | 1989
- 309
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MBE as a production technology for HEMT LSIsKondo, Kazuo / Saito, Junji / Igarashi, Takeshi / Nanbu, Kazuo / Ishikawa, Tomonori et al. | 1989
- 317
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Ultra-high throughput of GaAs and (AlGa)As layers grown by MBE with a specially designed MBE systemSonoda, T. / Ito, M. / Kobiki, M. / Hayashi, K. / Takamiya, S. / Mitsui, S. et al. | 1989
- 322
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In situ cleaning of GaAs substrates with HCl gas and hydrogen mixture prior to MBE growthSaito, Junji / Nanbu, Kazuo / Ishikawa, Tomonori / Kondo, Kazuo et al. | 1989
- 328
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Recent developments in optical processes in quantum wells and superlattices: Many body effects and field-induced localizationVoos, M. et al. | 1989
- 333
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MBE growth and properties of (100)- and (111)-oriented GaInP/AlInP quantum wells on GaAs substratesTakahashi, Kosei / Hayakawa, Toshiro / Hosoda, Masahiro / Yamamoto, Saburo / Hijikata, Toshiki et al. | 1989
- 338
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Optical properties of high-quality InAlAs/InGaAs SQWs grown by MBE using specially refined In and Al sourcesMishima, T. / Kasai, J. / Uchida, Y. / Takahashi, S. et al. | 1989
- 343
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Molecular beam epitaxial growth of (AlyGa1−y)xIn1−xP (x ∽ 0.5) on (100) GaAsHayakawa, Toshiro / Takahashi, Kosei / Sasaki, Kazuaki / Yamamoto, Saburo / Hijikata, Toshiki et al. | 1989
- 348
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High on/off ratio bistable operation of InGaAs/InAlAs MQW lasers using resonant tunneling effectKawamura, Y. / Wakita, K. / Mikami, O. et al. | 1989
- 352
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Investigation of asymmetric double barrier resonant tunneling structures based on (AlGa)As/GaAsHughes, O.H. / Henini, M. / Alves, E.S. / Eaves, L. / Leadbeater, M.L. / Sheard, F.W. / Toombs, G.A. / Hill, G. / Pate, M.A. / Portal, J.C. et al. | 1989
- 357
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Tunneling of x-point electrons in triple barrier diodesNakagawa, Tadashi / Kojima, Takeshi / Ohta, Kimihiro et al. | 1989
- 360
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MOCVD — Current state and futureKukimoto, Hiroshi et al. | 1989
- 363
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Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxySugiyama, Y. / Fujii, T. / Nakata, Y. / Muto, S. / Miyauchi, E. et al. | 1989
- 367
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Absence of growth sequence dependence of AlAs/GaAs heterojunction band discontinuity determined by x-ray photoelectron spectroscopyOhnoc, H. / Ishii, H. / Matsuzaki, K. / Hasegawa, H. et al. | 1989
- 371
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Determination of the resonant-state energy of an In0.53Ga0.47As/AlAs pseudomorphic resonant tunneling barrier grown by MBEInata, T. / Muto, S. / Sasa, S. / Miyauchi, E. et al. | 1989
- 375
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Distributed Feedback (DFB) lasers at 1.5 μm grown by Gas Source Molecular Beam Epitaxy (GSMBE)Goldstein, L. / Artigue, C. / Bonnevie, D. / Fernier, B. / Perales, A. / Benoit, J. et al. | 1989
- 378
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AlInAs/GaInAs HEMT application for high performance OEIC receiversWada, O. / Nobuhara, H. / Makiuchi, M. / Hamaguchi, H. / Sasa, S. / Fujii, T. et al. | 1989
- 382
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Low temperature MBE growth of high quality modulation doped AlGaAs/GaAs MQWs for ultra-high-speed laser diodesMishima, T. / Tanoue, T. / Uomi, K. et al. | 1989
- 386
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Observation of microwave oscillations (up to 32.6 GHz) from biwell superlattice devicesTanaka, Y. / Kano, H. / Hashimoto, M. / Igarashi, I. et al. | 1989
- 390
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Growth and properties of N-AlGaAs/InGaAs selectively-doped single- and double-heterojunction fet structuresMatsuno, T. / Nishii, K. / Inoue, K. et al. | 1989
- 394
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Highly-sensitive Hall element with quantum-well superlattice structuresSugiyama, Y. / Soga, H. / Tacano, M. et al. | 1989
- 398
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Growth of single domain GaAs/fluoride/Si structuresTsutsui, Kazuo / Asano, Tanemasa / Ishiwara, Hiroshi / Furukawa, Seijiro et al. | 1989
- 403
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Reduction of strain in GaAs grown on CaF2/Si heteroepitaxial substratesHashimoto, Shin / Gibson, W.M. / Schowalter, L.J. / Lee, E.Y. / Claxton, P.A. et al. | 1989
- 405
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Molecular beam epitaxial growth of high quality GaAs layer directly on GaP substrateTsuji, Masayoshi / Takano, Yasushi / Torihata, Teiji / Kanaya, Yasuhiro / Pak, Kangsa / Yonezu, Hiroo et al. | 1989
- 410
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Growth of single-crystal Fe/Cr magnetic multilayer structures on (001) GaAs by molecular beam epitaxyEtienne, P. / Chazelas, J. / Cruezet, G. / Friederich, A. / Massies, J. / Nguyen-van-dau, F. / Fert, A. et al. | 1989
- 415
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Initial stage of CaF2 heteroepitaxy on GaAs(001) substratesWaho, Takao / Yanagawa, Fumihiko / Yamada, Yasuko et al. | 1989
- 421
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Doping properties of Ge on GaAs (100) grown by MBEKawanaka, Masafumi / Sone, Jun'ichi et al. | 1989
- 425
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MBE growth of AlGaAs/NiAl/AlGaAs heterostructures: A novel epitaxial III–V semiconductor/metal systemHarbison, J.P. / Sands, T. / Tabatabaie, N. / Chan, W.K. / Florez, L.T. / Keramidas, V.G. et al. | 1989
- 427
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Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy systemGuivarc'h, A. / Caulet, J. / Guenais, B. / Ballini, Y. / Guérin, R. / Poudoulec, A. / Regreny, A. et al. | 1989
- 431
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Silicon/germanium strained layer superlatticesAbstreiter, G. / Eberl, K. / Friess, E. / Wegscheider, W. / Zachai, R. et al. | 1989
- 439
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Growth of abrupt Ge layers in Si (100)Iyer, S.S. / Pukite, P.R. / Tsang, J.C. / Copel, M.W. et al. | 1989
- 444
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Gem/Sin strained-layer superlattices fabricated by phase-locked epitaxyMiki, Kazushi / Sakamoto, Kunihiro / Sakamoto, Tsunenori / Okumura, Hajime / Takahashi, Naoki / Yoshida, Sadafumi et al. | 1989
- 447
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Epitaxy of Si-Ge heterostructures by Si MBEBaribeau, J.-M. / Houghton, D.C. / Lockwood, D.J. / Dharma-Wardana, M.W.C. / Aers, G.C. et al. | 1989
- 451
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Study of ultra-thin Ge/Si strained layer superlatticeChang, S.J. / Huang, C.F. / Kallel, M.A. / Wang, K.L. / Bowman, R.C. Jr. / Adams, P.M. et al. | 1989
- 455
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Growth of single crystal CoSi2 layers at room temperatureTung, R.T. / Schrey, F. et al. | 1989
- 461
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Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructureFuyuki, Takashi / Nakayama, Michiaki / Yoshinobu, Tatsuo / Shiomi, Hiromu / Matsunami, Hiroyuki et al. | 1989
- 464
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Preparation and characterization of SiNx films epitaxially grown on Si(111) substratesIchimori, T. / Tabe, M. / Sakakibara, Y. et al. | 1989
- 468
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Microscopic observation of Si MBE on Si(001) surface using microprobe RHEEDDoi, Takahisa / Ichikawa, Masakazu et al. | 1989
- 472
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RHEED intensity rocking curves from Si(111) surface during MBE growthNakahara, Hitoshi / Ichimiya, Ayahiko et al. | 1989
- 476
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Disilane gas source Si-MBEHirayama, Hiroyuki / Tatsumi, Toru / Aizaki, Naoaki et al. | 1989
- 480
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Atomic Layer Doping (ALD) technology in Si and its application to a new structure FETVan Gorkum, Aart A. / Nakagawa, Kiyokazu / Shiraki, Yasuhiro et al. | 1989
- 484
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Very low temperature growth and doping of silicon MBE layersJorke, H. / Kibbel, H. / Schäffler, F. / Casel, A. / Herzog, H.-J. / Kasper, E. et al. | 1989
- 486
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Measurement and mechanism of free carrier recombination in a silicon doping superlatticeTeo, K.H. / McMullin, J.N. / Weichman, F.L. / Schmidt-Weinmar, H.G. / Landheer, D. / Denhoff, M.W. et al. | 1989
- 490
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Self-aligned NiSi2 electrode fabrication by MBE and its application to etched-groove Permeable Base Transistor (PBT)Ohshima, T. / Nakagawa, K. / Nakamura, N. / Shiraki, Y. et al. | 1989
- 494
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Metalorganic molecular beam epitaxy of γ-Al2O3 insulator films on Si with laser irradiationSawada, Kazuaki / Ishida, Makoto / Nakamura, Tetsuro / Suzaki, Tetsuo et al. | 1989
- 500
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Development of a new MBE growth method for fabrication of high quality, double epitaxial Si/γ-Al2O3/Si structuresOgata, H. / Hanafusa, H. / Yoneda, K. et al. | 1989
- 505
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Formation and structures of NiO-ZnO artificial superlatticesIijima, Kenji / Terashima, Takahito / Yamamoto, Kazunuki / Bando, Yoshichika et al. | 1989
- 509
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Homoepitaxial growth of low-resistivity-Al-doped ZnS single crystal films by molecular beam epitaxyKitagawa, Masahiko / Tomomura, Yoshitaka / Suzuki, Akira / Nakajima, Shigeo et al. | 1989
- 512
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Growth of p- and n-type ZnSe by molecular beam epitaxyCheng, H. / DePuydt, J.M. / Potts, J.E. / Haase, M.A. et al. | 1989
- 517
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Growth and characterization of MBE-grown ZnTe:PHishida, Yuji / Ishii, Hiroaki / Toda, Tadao / Niina, Tatsuhiko et al. | 1989
- 522
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Growth of ZnSe films on GaAs 〈100〉 substrates by conventional and pulsed molecular beam epitaxyLilja, Jarmo / Keskinen, Jari / Asonen, Harry / Pessa, Markus et al. | 1989
- 525
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Lattice strain and its effects on energy band structure in MBE-ZnSxSe1−x/GaAsMatsumura, Nobuo / Tsubokura, Mitsutaka / Saraie, Junji et al. | 1989
- 529
-
MBE growth mechanisms of ZnSe: Flux ratio and substrate temperatureZhu, Ziqiang / Nomura, Takashi / Miyao, Masahiro / Hagino, Minoru et al. | 1989
- 533
-
Incorporation processes in MBE growth of ZnSeVenkatasubramanian, R. / Otsuka, N. / Qiu, J. / Kolodziejski, L.A. / Gunshor, R.L. et al. | 1989
- 538
-
Photo-assisted MBE growth of ZnSe crystalsOhishi, M. / Saito, H. / Okano, H. / Ohmori, K. et al. | 1989
- 543
-
Properties of undoped and Sb-doped CdTe surfaces prepared by conventional and photo-assisted molecular beam epitaxyBenson, J.D. / Rajavel, D. / Wagner, B.K. / Benz, R. II / Summers, C.J. et al. | 1989
- 547
-
MBE-grown ZnTe-ZnS strained-layer superlatticesKarasawa, Takeshi / Ohkawa, Kazuhiro / Mitsuyu, Tsuneo et al. | 1989
- 552
-
Twin free growth of II–VI compounds on (111) CdZnTe substrates by molecular beam epitaxyDi Cioccio, L. / Million, A. / Piaguet, J. / Rolland, G. / Lentz, G. / Magnea, N. / Mariette, H. et al. | 1989
- 557
-
MBE growth of CdTe and Cd1−xMnxTe layers and multilayers on InSb substratesAshenford, D.E. / Lunn, B. / Davies, J.J. / Hogg, J.H.C. / Nicholls, J.E. / Scott, C.G. / Shaw, D. / Sutherland, H.H. / Hilton, C.P. / Gregory, T.J. et al. | 1989
- 562
-
Epitaxial lead chalcogenides on fluoride covered silicon substrates: Properties and infrared device fabricationZogg, H. / Maissen, C. / Masek, J. / Blunier, S. et al. | 1989
- 564
-
Growth of CdTe/α-Sn/CdTe/InSb multilayer structure by MBESatoh, S. / Kimata, M. et al. | 1989
- 567
-
II–VI/III–V heterointerfaces: Epilayer-on-epilayer structuresQian, Q.-D. / Qiu, J. / Glenn, J.L. / O, Sungki / Gunshor, R.L. / Kolodziejski, L.A. / Kobayashi, M. / Otsuka, N. / Melloch, M.R. / Cooper, J.A. Jr. et al. | 1989
- 572
-
A study of growth mechanism of ZnS and ZnSe in MOMBE using dimethylzinc and chalcogen hydrides as reactantsYoshikawa, A. / Oniyama, H. / Yamaga, S. / Kasai, H. et al. | 1989
- 580
-
Atomic layer epitaxy of ZnSe-ZnTe strained layer superlatticesDosho, Shiro / Takemura, Yasushi / Konagai, Makoto / Takahashi, Kiyoshi et al. | 1989
- 584
-
Growth and characterization of CdTe single quantum wells confined by Cd1−xZnxTe alloy and short period CdTe/ZnTe superlatticeMagnea, N. / Lentz, G. / Mariette, H. / Feuillet, G. / Dal'bo, F. / Tuffigo, H. et al. | 1989
- 589
-
Physics and engineering of diluted magnetic semiconductor superlatticesNurmikko, A.V. / Kolodziejski, L.A. / Gunshor, R.L. et al. | 1989
- 594
-
MBE growth and characterization of Hg-based superlatticesWu, Owen K. / Shirland, Fred A. / Baukus, James P. / Schulman, Joel N. / Sanjiv Kamath, G. / Patten, E.A. et al. | 1989
- 599
-
Molecular beam epitaxial growth and photoluminescence of PbS-PbCdSSe single quantum wellsHashimoto, S. / Koguchi, N. / Takahashi, S. / Akiba, S. et al. | 1989
- 603
-
Application of Van der Waals epitaxy to highly heterogeneous systemsSaiki, Koichiro / Ueno, Keiji / Shimada, Toshihiro / Koma, Atsushi et al. | 1989
- 607
-
MBE growth of high critical temperature superconductorsHarris, J.S. / Eckstein, J.N. / Hellmann, E.S. / Schlom, D.G. et al. | 1989
- 617
-
Formation and properties of YBa2Cu3O7−x single-crystal thin films by activated reactive evaporationTerashima, Takahito / Iijima, Kenji / Yamamoto, Kazunuki / Takada, Jun / Hirata, Kazuto / Mazaki, Hiromasa / Bando, Yoshichika et al. | 1989
- 621
-
In situ determination of Ba, Y, Cu and O2 flux by cold cathode discharge induced emission spectroscopySakai, Junro / Kato, Kazunori / Hirama, Kimiaki / Murakami, Shun-ichi / Ishida, Tetsuo et al. | 1989
- 625
-
Author index| 1989
- 635
-
Subject index| 1989
- iv
-
Editorial Board| 1989
- ix
-
PrefaceShiraki, Y. / Sakaki, H. et al. | 1989