Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage (English)
- New search for: De Santi, C.
- New search for: Meneghini, M.
- New search for: Marioli, M.
- New search for: Buffolo, M.
- New search for: Trivellin, N.
- New search for: Weig, T.
- New search for: Holc, K.
- New search for: Köhler, K.
- New search for: Wagner, J.
- New search for: Schwarz, U.T.
- New search for: Meneghesso, G.
- New search for: Zanoni, E.
- New search for: De Santi, C.
- New search for: Meneghini, M.
- New search for: Marioli, M.
- New search for: Buffolo, M.
- New search for: Trivellin, N.
- New search for: Weig, T.
- New search for: Holc, K.
- New search for: Köhler, K.
- New search for: Wagner, J.
- New search for: Schwarz, U.T.
- New search for: Meneghesso, G.
- New search for: Zanoni, E.
In:
Microelectronics and Reliability
;
54
, 9-10
;
2147-2150
;
2014
-
ISSN:
- Article (Journal) / Electronic Resource
-
Title:Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
-
Contributors:De Santi, C. ( author ) / Meneghini, M. ( author ) / Marioli, M. ( author ) / Buffolo, M. ( author ) / Trivellin, N. ( author ) / Weig, T. ( author ) / Holc, K. ( author ) / Köhler, K. ( author ) / Wagner, J. ( author ) / Schwarz, U.T. ( author )
-
Published in:Microelectronics and Reliability ; 54, 9-10 ; 2147-2150
-
Publisher:
- New search for: Elsevier Ltd
-
Publication date:2014-07-08
-
Size:4 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 54, Issue 9-10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1637
-
EditorialBoit, Christian et al. | 2014
- 1638
-
Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF statesWrachien, N. / Cester, A. / Lago, N. / Meneghesso, G. / D’Alpaos, R. / Stefani, A. / Turatti, G. / Muccini, M. et al. | 2014
- 1643
-
Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tagsBose, I. / Tetzner, K. / Borner, K. / Bock, K. et al. | 2014
- 1648
-
Robustness Validation – A physics of failure based approach to qualificationKanert, W. et al. | 2014
- 1655
-
A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devicesSintamarean, N.C. / Wang, H. / Blaabjerg, F. / Rimmen, P.de P. et al. | 2014
- 1661
-
Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) testsMavinkurve, A. / Goumans, L. / O’Halloran, G.M. / Rongen, R.T.H. / Farrugia, M.-L. et al. | 2014
- 1666
-
Robust Electromigration reliability through engineering optimizationNg, Wee Loon / Tee, Kheng Chok / Liu, Junfeng / Ee, Yong Chiang / Aubel, Oliver / Tan, Chuan Seng / Pey, Kin Leong et al. | 2014
- 1671
-
Empirical BEOL-TDDB evaluation based on I(t)-trace analysisAubel, O. / Beyer, A. / Talut, G. / Gall, M. et al. | 2014
- 1675
-
As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliabilityTang, B.J. / Croes, K. / Barbarin, Y. / Wang, Y.Q. / Degraeve, R. / Li, Y. / Toledano-Luque, M. / Kauerauf, T. / Bömmels, J. / Tőkei, Zs. et al. | 2014
- 1680
-
Physics-of-failure assessment methodology for power electronic systemsSquiller, D. / Greve, H. / Mengotti, E. / McCluskey, F.P. et al. | 2014
- 1686
-
Influence of dicing damages on the thermo-mechanical reliability of bare-chip assembliesSteiert, M. / Wilde, J. et al. | 2014
- 1692
-
Study of EM void nucleation and mechanic relaxation effectsMarti, G. / Arnaud, L. / Wouters, Y. et al. | 2014
- 1697
-
Assessment methodology of the lateral migration component in data retention of 3D SONOS memoriesLiu, Lifang / Arreghini, Antonio / Van den bosch, Geert / Pan, Liyang / Van Houdt, Jan et al. | 2014
- 1702
-
Power grid redundant path contribution in system on chip (SoC) robustness against electromigrationOuattara, Boukary / Doyen, Lise / Ney, David / Mehrez, Habib / Bazargan-sabet, Pirouz et al. | 2014
- 1707
-
Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitorsBlasco, J. / Castán, H. / García, H. / Dueñas, S. / Suñé, J. / Kemell, M. / Kukli, K. / Ritala, M. / Leskelä, M. / Miranda, E. et al. | 2014
- 1712
-
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layerShubhakar, K. / Raghavan, N. / Kushvaha, S.S. / Bosman, M. / Wang, Z.R. / O’Shea, S.J. / Pey, K.L. et al. | 2014
- 1718
-
Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessmentSantini, T. / Morand, S. / Fouladirad, M. / Phung, L.V. / Miller, F. / Foucher, B. / Grall, A. / Allard, B. et al. | 2014
- 1724
-
Degradation behavior in upstream/downstream via test structuresKludt, J. / Weide-Zaage, K. / Ackermann, M. / Hein, V. / Kovács, C. et al. | 2014
- 1729
-
Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memoryRaghavan, Nagarajan / Frey, Daniel D. / Pey, Kin Leong et al. | 2014
- 1735
-
Analytical stress characterization after different chip separation methodsFuegl, M. / Mackh, G. / Meissner, E. / Frey, L. et al. | 2014
- 1741
-
Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin filmsRückerl, A. / Huppmann, S. / Zeisel, R. / Katz, S. et al. | 2014
- 1745
-
Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testingPetrov, A.S. / Tapero, K.I. / Ulimov, V.N. et al. | 2014
- 1749
-
RTN distribution comparison for bulk, FDSOI and FinFETs devicesGerrer, L. / Amoroso, S.M. / Hussin, R. / Asenov, A. et al. | 2014
- 1753
-
Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stressesDuan, N. / Bach, T. / Shen, J. / Rongen, R. et al. | 2014
- 1758
-
Vacuum quality evaluation for uncooled micro bolometer thermal imager sensorsElßner, Michael et al. | 2014
- 1764
-
Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test techniqueMagnien, J. / Khatibi, G. et al. | 2014
- 1770
-
μ-Raman spectroscopy for stress analysis in high power silicon devicesKociniewski, T. / Moussodji, J. / Khatir, Z. et al. | 2014
- 1774
-
Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analysesWang, Y. / Zhang, Y. / Deng, E.Y. / Klein, J.O. / Naviner, L.A.B. / Zhao, W.S. et al. | 2014
- 1779
-
Precise nanofabrication with multiple ion beams for advanced circuit editWu, Huimeng / Ferranti, David / Stern, Lewis et al. | 2014
- 1785
-
Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structuresSimon-Najasek, Michél / Huebner, Susanne / Altmann, Frank / Graff, Andreas et al. | 2014
- 1790
-
Local thickness and composition analysis of TEM lamellae in the FIBLang, C. / Hiscock, M. / Dawson, M. / Hartfield, C. et al. | 2014
- 1794
-
Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials – An adaptive calibration algorithmScholz, P. / Herfurth, N. / Sadowski, M. / Lundquist, T. / Kerst, U. / Boit, C. et al. | 2014
- 1798
-
Focused ion beam contact to non-volatile memory cellsHelfmeier, Clemens / Schlangen, Rudolf / Boit, Christian et al. | 2014
- 1802
-
Low temperature FIB cross section: Application to indium micro bumpsDantas de Morais, L. / Chevalliez, S. / Mouleres, S. et al. | 2014
- 1806
-
Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehiclesThoben, M. / Sauerland, F. / Mainka, K. / Edenharter, S. / Beaurenaut, L. et al. | 2014
- 1813
-
Prediction of supercapacitors floating ageing with surface electrode interface based ageing lawGerman, R. / Sari, A. / Venet, P. / Ayadi, M. / Briat, O. / Vinassa, J.M. et al. | 2014
- 1818
-
Eliminating infant mortality in metallized film capacitors by defect detectionMcCluskey, F.P. / Li, N.M. / Mengotti, E. et al. | 2014
- 1823
-
Metallized polymer film capacitors ageing law based on capacitance degradationMakdessi, M. / Sari, A. / Venet, P. et al. | 2014
- 1828
-
Impact of gate drive voltage on avalanche robustness of trench IGBTsRiccio, M. / Maresca, L. / Irace, A. / Breglio, G. / Iwahashi, Y. et al. | 2014
- 1833
-
Thermal-aware design and fault analysis of a DC/DC parallel resonant converterDe Falco, G. / Riccio, M. / Breglio, G. / Irace, A. et al. | 2014
- 1839
-
Comparison of temperature limits for Trench silicon IGBT technologies for medium power applicationsPerpiñà, X. / Jordà, X. / León, J. / Vellvehi, M. / Antón, D. / Llorente, S. et al. | 2014
- 1845
-
3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditionsRiccio, Michele / d’Alessandro, Vincenzo / Irace, Andrea / Rostaing, Gilles / Berkani, Mounira / Lefebvre, Stéphane / Dupuy, Philippe et al. | 2014
- 1851
-
Performance drifts of N-MOSFETs under pulsed RF life testBelaïd, M.A. / Gares, M. / Daoud, K. / Latry, O. et al. | 2014
- 1856
-
Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modulesDugal, F. / Ciappa, M. et al. | 2014
- 1862
-
Improving the FE simulation of molded packages using warpage measurementsHuber, S. / Dijk, M.v. / Walter, H. / Wittler, O. / Thomas, T. / Lang, K.-D. et al. | 2014
- 1867
-
Reliability of Cu nanoparticle joint for high temperature power electronicsIshizaki, T. / Kuno, A. / Tane, A. / Yanase, M. / Osawa, F. / Satoh, T. / Yamada, Y. et al. | 2014
- 1872
-
Dielectric strength and thermal performance of PCB-embedded power electronicsRandoll, R. / Wondrak, W. / Schletz, A. et al. | 2014
- 1877
-
The influence of liners with Ti, Ta or Ru finish on thin Cu filmsGross, David / Haag, Sabine / Schneider-Ramelow, Martin / Lang, Klaus-Dieter et al. | 2014
- 1883
-
HCS degradation of 5nm oxide high-voltage PLDMOSOlk, C. / Aresu, S. / Rudolf, R. / Röhner, M. / Gustin, W. / Stein Von Kamienski, E. et al. | 2014
- 1887
-
Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applicationsBergès, C. / Soufflet, P. / Jadrani, A. et al. | 2014
- 1891
-
Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part IITakaishi, J. / Harada, S. / Tsukuda, M. / Omura, I. et al. | 2014
- 1897
-
Short-circuit protection for an IGBT with detecting the gate voltage and gate chargeHasegawa, K. / Yamamoto, K. / Yoshida, H. / Hamada, K. / Tsukuda, M. / Omura, I. et al. | 2014
- 1901
-
Joining and package technology for 175°C Tj increasing reliability in automotive applicationsDietrich, Peter et al. | 2014
- 1906
-
Overload robust IGBT design for SSCB applicationSupono, I. / Urresti, J. / Castellazzi, A. / Flores, D. et al. | 2014
- 1911
-
Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehiclesWang, Y. / Jones, S. / Dai, A. / Liu, G. et al. | 2014
- 1916
-
Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal designGiuliani, F. / Dipankar, D. / Delmonte, N. / Castellazzi, A. / Cova, P. et al. | 2014
- 1921
-
Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditionsTran, S.H. / Dupont, L. / Khatir, Z. et al. | 2014
- 1927
-
Turn-off instabilities in large area IGBTsAbbate, C. / Iannuzzo, F. / Busatto, G. / Sanseverino, A. / Velardi, F. / Ronsisvalle, C. / Victory, J. et al. | 2014
- 1935
-
Impact of active thermal management on power electronics designAndresen, M. / Liserre, M. et al. | 2014
- 1940
-
NBTI degradation in STI-based LDMOSFETsHe, Yandong / Zhang, Ganggang / Zhang, Xing et al. | 2014
- 1944
-
Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing testAyadi, M. / Briat, O. / Lallemand, R. / Eddahech, A. / German, R. / Coquery, G. / Vinassa, J.M et al. | 2014
- 1949
-
Reliability challenges for barrier/liner system in high aspect ratio through silicon viasLi, Yunlong / Van Huylenbroeck, Stefaan / Van Besien, Els / Shi, Xiaoping / Wu, Chen / Stucchi, Michele / Beyer, Gerald / Beyne, Eric / De Wolf, Ingrid / Croes, Kristof et al. | 2014
- 1953
-
The effects of etching and deposition on the performance and stress evolution of open through silicon viasFilipovic, Lado / Selberherr, Siegfried et al. | 2014
- 1959
-
Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integrationSander, C. / Standke, Y. / Niese, S. / Rosenkranz, R. / Clausner, A. / Gall, M. / Zschech, E. et al. | 2014
- 1963
-
Stress analyses of high spatial resolution on TSV and BEoL structuresVogel, D. / Auerswald, E. / Auersperg, J. / Bayat, P. / Rodriguez, R.D. / Zahn, D.R.T. / Rzepka, S. / Michel, B. et al. | 2014
- 1969
-
Study of the UBM to copper interface robustness of solder bumps in flip chip packagesDreybrodt, J. / Dupraz, Y. et al. | 2014
- 1972
-
A study of through package vias in a glass interposer for multifunctional and miniaturized systemsEl Amrani, A. / Benali, A. / Bouya, M. / Faqir, M. / Demir, K. / Hadjoudja, A. / Ghogho, M. et al. | 2014
- 1977
-
Evaluation new corner stress relief structure layout for high robust metallizationHein, V. / Kludt, J. / Weide-Zaage, K. et al. | 2014
- 1982
-
Sn whisker evaluations in 3D microbumped structuresVakanas, G.P. / Vandecasteele, B. / Schaubroek, D. / De Messemaeker, J. / Willems, G. / Ashworth, M.A. / Wilcox, G.D. / De Wolf, I. et al. | 2014
- 1988
-
Reliability of Wafer Level Chip Scale PackagesRongen, R. / Roucou, R. / vd Wel, P.J. / Voogt, F. / Swartjes, F. / Weide-Zaage, K. et al. | 2014
- 1995
-
High temperature degradation of palladium coated copper bond wiresKrinke, J.C. / Dragicevic, D. / Leinert, S. / Friess, E. / Glueck, J. et al. | 2014
- 2000
-
Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materialsMärz, B. / Graff, A. / Klengel, R. / Petzold, M. et al. | 2014
- 2006
-
Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methodsArjmand, E. / Agyakwa, P.A. / Johnson, C.M. et al. | 2014
- 2013
-
Qualification procedure for moisture in embedded capacitorsFrémont, Hélène / Kludt, Jörg / Wade, Massar / Weide-Zaage, Kirsten / Bord-Majek, Isabelle / Duchamp, Geneviève et al. | 2014
- 2017
-
High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substratesLahokallio, S. / Kiilunen, J. / Frisk, L. et al. | 2014
- 2023
-
A study on electrochemical effects in external capacitor packagesPreu, H. / Feilmeier, J. / Lang, M. / Soellner, N. / Walter, J. / Mack, W. et al. | 2014
- 2028
-
Thermal and mechanical effects of voids within flip chip soldering in LED packagesLiu, Yang / Leung, Stanley Y.Y. / Zhao, Jia / Wong, Cell K.Y. / Yuan, Cadmus A. / Zhang, Guoqi / Sun, Fenglian / Luo, Liangliang et al. | 2014
- 2034
-
Influence of mobile ion in organic material used in semiconductor devicesTan, Y.Y. / Keller, C. / Teo, K.S. / Rajamanickam, Sivanyanam et al. | 2014
- 2039
-
A three-scale approach to the numerical simulation of metallic bonding for MEMS packagingGhisi, Aldo / Mariani, Stefano / Corigliano, Alberto / Allegato, Giorgio / Oggioni, Laura et al. | 2014
- 2044
-
Microstructure of Sn–1Ag–0.5Cu solder alloy bearing Fe under salt spray testNordin, N.I.M. / Said, S.M. / Ramli, R. / Sabri, M.F.M. / Sharif, N.M. / Arifin, N.A.F.N.M. / Ibrahim, N.N.S. et al. | 2014
- 2048
-
Protective coatings of electronics under harsh thermal shockPippola, J. / Marttila, T. / Frisk, L. et al. | 2014
- 2053
-
Evaluating board level solder interconnects reliability using vibration test methodsLiu, Y. / Sun, F.L. / Zhang, H.W. / Wang, J. / Zhou, Z. et al. | 2014
- 2058
-
Reliability of adhesive joined thinned chips on flexible substrates under humid conditionsFrisk, Laura / Saarinen-Pulli, Kirsi et al. | 2014
- 2064
-
Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defectWeber, Y. / Buffo, L. / Vanhuffel, B. / Lee, N. / Stirlen, N. / Chen, J. / Wang, X.D. et al. | 2014
- 2070
-
Quantitative Scanning Microwave Microscopy: A calibration flowSchweinböck, T. / Hommel, S. et al. | 2014
- 2075
-
Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of packageReverdy, A. / Marchetti, M. / Fudoli, A. / Pagani, A. / Goubier, V. / Cason, M. / Alton, J. / Igarashi, M. / Gibbons, G. et al. | 2014
- 2081
-
Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fieldsCiappa, Mauro / Illarionov, Alexey Yu. / Ilgünsatiroglu, Emre et al. | 2014
- 2088
-
A comprehensive study of the application of the EOP techniques on bipolar devicesRebaï, M.M. / Darracq, F. / Guillet, J.-P. / Bernou, E. / Sanchez, K. / Perdu, P. / Lewis, D. et al. | 2014
- 2093
-
Magnetic Field Imaging for non destructive 3D IC testingGaudestad, J. / Orozco, A. et al. | 2014
- 2099
-
Pattern image enhancement by extended depth of fieldChef, S. / Billiot, B. / Jacquir, S. / Sanchez, K. / Perdu, P. / Binczak, S. et al. | 2014
- 2105
-
Backside spectroscopic photon emission microscopy using intensified silicon CCDGlowacki, A. / Boit, C. / Perdu, P. / Iwaki, Y. et al. | 2014
- 2109
-
Fretting corrosion: Analysis of the failure mechanism for low voltage drives applicationsMengotti, E. / Duarte, L.I. / Pippola, J. / Frisk, L. et al. | 2014
- 2115
-
SEM-based nanoprobing on 32 and 28nm CMOS devices challenges for semiconductor failure analysisPaul, Erik / Herzog, Holger / Jansen, Sören / Hobert, Christian / Langer, Eckhard et al. | 2014
- 2118
-
Acoustic detection of micro-cracks in small electronic devicesReuther, G.M. / Pufall, R. / Goroll, M. et al. | 2014
- 2123
-
Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer rangeCiappa, Mauro / Ilgünsatiroglu, Emre / Illarionov, Alexey Yu. et al. | 2014
- 2128
-
Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltageDoering, S. / Rudolf, R. / Pinkert, M. / Roetz, H. / Wagner, C. / Eckl, S. / Strasser, M. / Wachowiak, A. / Mikolajick, T. et al. | 2014
- 2133
-
Electromigration reliability of open TSV structuresZisser, W.H. / Ceric, H. / Weinbub, J. / Selberherr, S. et al. | 2014
- 2138
-
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveformsDal Lago, M. / Meneghini, M. / De Santi, C. / Barbato, M. / Trivellin, N. / Meneghesso, G. / Zanoni, E. et al. | 2014
- 2142
-
Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laserNeitzert, H.C. / Landi, G. et al. | 2014
- 2147
-
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltageDe Santi, C. / Meneghini, M. / Marioli, M. / Buffolo, M. / Trivellin, N. / Weig, T. / Holc, K. / Köhler, K. / Wagner, J. / Schwarz, U.T. et al. | 2014
- 2151
-
FIB-induced electro-optical alterations in a DFB InP laser diodeMura, G. / Vanzi, M. / Marcello, G. et al. | 2014
- 2154
-
UV LEDs reliability tests for fluoro-sensing sensor applicationArques-Orobon, F.J. / Nuñez, N. / Vazquez, M. / González-Posadas, V. et al. | 2014
- 2159
-
A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switchesKoutsoureli, M. / Michalas, L. / Gantis, A. / Papaioannou, G. et al. | 2014
- 2164
-
Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stressKang, Jung Han / Cho, Edward Namkyu / Yun, Ilgu et al. | 2014
- 2167
-
The effect of gate overlap on the device degradation in IGZO thin film transistorsKim, Dae Hyun / Park, Jong Tae et al. | 2014
- 2171
-
Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applicationsSeif, M. / Pascal, F. / Sagnes, B. / Hoffmann, A. / Haendler, S. / Chevalier, P. / Gloria, D. et al. | 2014
- 2176
-
The degradation of multi-crystalline silicon solar cells after damp heat testsOh, Wonwook / Kim, Seongtak / Bae, Soohyun / Park, Nochang / Kang, Yoonmook / Lee, Hae-Seok / Kim, Donghwan et al. | 2014
- 2180
-
A fast reliability assessment method for Si MEMS based microcantilever beamsRafiee, P. / Khatibi, G. et al. | 2014
- 2185
-
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETsFayyaz, A. / Yang, L. / Riccio, M. / Castellazzi, A. / Irace, A. et al. | 2014
- 2191
-
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistorsChevtchenko, S.A. / Schulz, M. / Bahat-Treidel, E. / John, W. / Freyer, S. / Kurpas, P. / Würfl, J. et al. | 2014
- 2196
-
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier DiodesHu, J. / Stoffels, S. / Lenci, S. / Ronchi, N. / Venegas, R. / You, S. / Bakeroot, B. / Groeseneken, G. / Decoutere, S. et al. | 2014
- 2200
-
Thermal damage in SiC Schottky diodes induced by SE heavy ionsAbbate, C. / Busatto, G. / Cova, P. / Delmonte, N. / Giuliani, F. / Iannuzzo, F. / Sanseverino, A. / Velardi, F. et al. | 2014
- 2207
-
Temperature effects on the ruggedness of SiC Schottky diodes under surge currentLeón, J. / Perpiñà, X. / Banu, V. / Montserrat, J. / Berthou, M. / Vellvehi, M. / Godignon, P. / Jordà, X. et al. | 2014
- 2213
-
Proton induced trapping effect on space compatible GaN HEMTsStocco, A. / Gerardin, S. / Bisi, D. / Dalcanale, S. / Rampazzo, F. / Meneghini, M. / Meneghesso, G. / Grünenpütt, J. / Lambert, B. / Blanck, H. et al. | 2014
- 2217
-
Analysis of an ESD failure mechanism on a SiC MESFETPhulpin, T. / Trémouilles, D. / Isoird, K. / Tournier, D. / Godignon, P. / Austin, P. et al. | 2014
- 2222
-
Traps localization and analysis in GaN HEMTsChini, A. / Soci, F. / Meneghesso, G. / Meneghini, M. / Zanoni, E. et al. | 2014
- 2227
-
Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generationKatsuno, T. / Manaka, T. / Ishikawa, T. / Ueda, H. / Uesugi, T. / Iwamoto, M. et al. | 2014
- 2232
-
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stressWu, Tian-Li / Marcon, Denis / Stoffels, Steve / You, Shuzhen / De Jaeger, Brice / Van Hove, Marleen / Groeseneken, Guido / Decoutere, Stefaan et al. | 2014
- 2237
-
Failure signatures on 0.25μm GaN HEMTs for high-power RF applicationsStocco, A. / Dalcanale, S. / Rampazzo, F. / Meneghini, M. / Meneghesso, G. / Grünenpütt, J. / Lambert, B. / Blanck, H. / Zanoni, E. et al. | 2014
- 2242
-
Crosstalk in monolithic GaN-on-Silicon power electronic devicesUnni, V. / Kawai, H. / Narayanan, E.M.S. et al. | 2014
- 2248
-
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTsRossetto, I. / Rampazzo, F. / Meneghini, M. / Silvestri, M. / Dua, C. / Gamarra, P. / Aubry, R. / di Forte-Poisson, M.-A. / Patard, O. / Delage, S.L. et al. | 2014
- 2253
-
Performance and reliability trade-offs for high-κ RRAMRaghavan, Nagarajan et al. | 2014
- 2258
-
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operationsTang, B.J. / Zhang, W.D. / Breuil, L. / Robinson, C. / Wang, Y.Q. / Toledano-Luque, M. / Van den Bosch, G. / Zhang, J.F. / Van Houdt, J. et al. | 2014
- 2262
-
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memoriesDella Marca, V. / Postel-Pellerin, J. / Just, G. / Canet, P. / Ogier, J.-L. et al. | 2014
- 2266
-
Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devicesRaghavan, Nagarajan / Bosman, Michel / Frey, Daniel D. / Pey, Kin Leong et al. | 2014
- 2272
-
Reliability of ESD protection devices designed in a 3D technologyCourivaud, B. / Nolhier, N. / Ferru, G. / Bafleur, M. / Caignet, F. et al. | 2014
- 2278
-
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuitsAutran, J.L. / Glorieux, M. / Munteanu, D. / Clerc, S. / Gasiot, G. / Roche, P. et al. | 2014
- 2284
-
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulationMunteanu, D. / Autran, J.L. et al. | 2014
- 2289
-
Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOSDutertre, J.M. / Possamai Bastos, R. / Potin, O. / Flottes, M.L. / Rouzeyre, B. / Di Natale, G. / Sarafianos, A. et al. | 2014
- 2295
-
Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspectiveRaghavan, Nagarajan / Bosman, Michel / Pey, Kin Leong et al. | 2014
- 2300
-
Comparative soft error evaluation of layout cells in FinFET technologyArtola, L. / Hubert, G. / Alioto, M. et al. | 2014
- 2306
-
A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm nodeWan, Xinggong / Chandrashekhar, Sandhya / Bayha, Boris / Trentzsch, Martin / Balzer, Torben / Siddabathula, Mahesh / Aubel, Oliver et al. | 2014
- 2310
-
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130nm technology p-channel transistorsRott, Gunnar Andreas / Rott, Karina / Reisinger, Hans / Gustin, Wolfgang / Grasser, Tibor et al. | 2014
- 2315
-
Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stressLee, Jae Hoon / Park, Jong Tae et al. | 2014
- 2319
-
Predictive evaluation of electrical characteristics of sub-22nm FinFET technologies under device geometry variationsMeinhardt, C. / Zimpeck, A.L. / Reis, R.A.L. et al. | 2014
- 2325
-
Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETsChoi, Jin Hyung / Han, Jin-Woo / Yu, Chong Gun / Park, Jong Tae et al. | 2014
- 2329
-
Energy distribution of positive charges in high-k dielectricHatta, S.W.M. / Ji, Z. / Zhang, J.F. / Zhang, W.D. / Soin, N. / Kaczer, B. / Gendt, S.D. / Groeseneken, G. et al. | 2014
- 2334
-
Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOSAbdul Wahab, Y. / Soin, N. / Hatta, S.W.M. et al. | 2014
- 2339
-
Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxidePotter, Kenneth / Morgan, Katrina / Shaw, Chris / Ashburn, Peter / Redman-White, William / De Groot, C.H. et al. | 2014
- 2344
-
Voltage scaling and aging effects on soft error rate in SRAM-based FPGAsKastensmidt, F.L. / Tonfat, J. / Both, T. / Rech, P. / Wirth, G. / Reis, R. / Bruguier, F. / Benoit, P. / Torres, L. / Frost, C. et al. | 2014
- IFC
-
Inside front cover - Editorial board| 2014