2.6 A, 0.69 MWcm−2 single-chip bulk GaN p-i-n rectifier (English)
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In:
Solid-State Electronics
;
48
, 2
;
359-361
;
2003
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:2.6 A, 0.69 MWcm−2 single-chip bulk GaN p-i-n rectifier
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Contributors:Irokawa, Y. ( author ) / Luo, B. ( author ) / Kang, B.S. ( author ) / Kim, Jihyun ( author ) / LaRoche, J.R. ( author ) / Ren, F. ( author ) / Baik, K.H. ( author ) / Pearton, S.J. ( author ) / Pan, C.-C. ( author ) / Chen, G.-T. ( author )
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Published in:Solid-State Electronics ; 48, 2 ; 359-361
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Publisher:
- New search for: Elsevier Ltd
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Publication date:2003-07-16
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Size:3 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 48, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 197
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Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cellsStem, N / Cid, M et al. | 2003
- 207
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Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturationChang, S.T. / Liu, C.W. / Lu, S.C. et al. | 2003
- 217
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A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistorsKuntman, Ayten / Ardalı, Arda / Kuntman, Hakan / Kaçar, Firat et al. | 2003
- 225
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2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substratesJankovic, N.D. / O’Neill, A. et al. | 2003
- 231
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Schottky diode back contacts for high frequency capacitance studies on semiconductorsMallik, Kanad / Falster, R.J. / Wilshaw, P.R. et al. | 2003
- 239
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Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOSKim, Keunwoo / Chuang, Ching-Te / Rim, Kern / Joshi, Rajiv V. et al. | 2003
- 245
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A 200 V silicon-on-sapphire LDMOS structure with a step oxide extended field plateRoig, J. / Flores, D. / Rebollo, J. / Hidalgo, S. / Millan, J. et al. | 2003
- 253
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Analysis and design criteria for traveling-wave MESFETKaddour, M. / Gharsallah, A. / Gharbi, A. / Baudrand, H. et al. | 2003
- 259
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A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuitsYang, Ji-Woon / Fossum, Jerry G. / Workman, Glenn O. / Huang, Cheng-Liang et al. | 2003
- 271
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Electrical overstress in AlGaN/GaN HEMTs: study of degradation processesKuzmı́k, J. / Pogany, D. / Gornik, E. / Javorka, P. / Kordoš, P. et al. | 2003
- 277
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Performance evaluation of SiGe heterojunction bipolar transistors on virtual substratesJankovic, N.D. / O’Neill, A. et al. | 2003
- 285
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High frequency C–V study of devices based on diamond-like carbon filmsCheng, Xiang / Chen, Chao / Zhou, Haiwen et al. | 2003
- 291
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Nitrogen activated bowing parameter of GaAs1−xNx (x⩽1%) obtained from photoreflectance spectraKhan, Arif / Nelson, Nicole / Griffin, James A. / Smith, David J. / Steiner, Todd / Noor Mohammad, S. et al. | 2003
- 291
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Nitrogen activated bowing parameter of GaAs1-xNx (x<=1%) obtained from photoreflectance spectraKhan, Arif et al. | 2004
- 297
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The impact of the distributed RC effect on high frequency noise modeling of bipolar transistorLee, Wai-Kit / Man, T.Y. / Mok, Philip K.T. / Ko, Ping K. / Chan, Mansun et al. | 2003
- 309
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Thin film transistors on nanocrystalline silicon directly deposited by a microwave plasma CVDTeng, L.H. / Anderson, W.A. et al. | 2003
- 315
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DC and RF characteristics of RPCVD grown modulation doped Si0.8Ge0.2 pMOSFETsSong, Young-Joo / Kim, Sang-Hoon / Lee, Sang-Heung / Bae, Hyun-Chul / Kang, Jin-Young / Shim, Kyu-Hwan / Kim, Joeng-Hoon / Song, Jong-In et al. | 2003
- 321
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Nonlinear effects in Schottky junction under a periodic reverse bias with large amplitudeLos, Andrei V. / Mazzola, Michael S. et al. | 2003
- 327
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A comprehensive and analytical drain current model for pocket-implanted NMOSFETsHo, C.S. / Liou, Juin J. / Chu, Gordon / Liu, Y.C. et al. | 2003
- 335
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Negative Schottky barrier between titanium and n-type Si() for low-resistance ohmic contactsTao, M. / Udeshi, D. / Agarwal, S. / Maldonado, E. / Kirk, W.P. et al. | 2003
- 339
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A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistorsRieh, Jae-Sung / Jagannathan, Basanth / Greenberg, David / Freeman, Greg / Subbanna, Seshadri et al. | 2003
- 345
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Evaluation of performance degradation factors for high-k gate dielectrics in N-channel MOSFETsOhata, Akiko et al. | 2003
- 351
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AlGaN/GaN HEMT based liquid sensorsMehandru, R. / Luo, B. / Kang, B.S. / Kim, Jihyun / Ren, F. / Pearton, S.J. / Pan, C.-C. / Chen, G.-T. / Chyi, J.-I. et al. | 2003
- 355
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Small signal measurement of Sc2O3 AlGaN/GaN moshemtsLuo, B. / Mehandru, R. / Kang, B.S. / Kim, J. / Ren, F. / Gila, B.P. / Onstine, A.H. / Abernathy, C.R. / Pearton, S.J. / Gotthold, D. et al. | 2003
- 359
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2.6 A, 0.69 MWcm−2 single-chip bulk GaN p-i-n rectifierIrokawa, Y. / Luo, B. / Kang, B.S. / Kim, Jihyun / LaRoche, J.R. / Ren, F. / Baik, K.H. / Pearton, S.J. / Pan, C.-C. / Chen, G.-T. et al. | 2003
- 363
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Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistorsHwang, Jeonghyun / Schaff, William J. / Green, Bruce M. / Cha, Hoyoung / Eastman, Lester F. et al. | 2003