SrHfO3 as gate dielectric for future CMOS technology (English)
- New search for: Rossel, C.
- New search for: Sousa, M.
- New search for: Marchiori, C.
- New search for: Fompeyrine, J.
- New search for: Webb, D.
- New search for: Caimi, D.
- New search for: Mereu, B.
- New search for: Ispas, A.
- New search for: Locquet, J.P.
- New search for: Siegwart, H.
- New search for: Germann, R.
- New search for: Tapponnier, A.
- New search for: Babich, K.
- New search for: Rossel, C.
- New search for: Sousa, M.
- New search for: Marchiori, C.
- New search for: Fompeyrine, J.
- New search for: Webb, D.
- New search for: Caimi, D.
- New search for: Mereu, B.
- New search for: Ispas, A.
- New search for: Locquet, J.P.
- New search for: Siegwart, H.
- New search for: Germann, R.
- New search for: Tapponnier, A.
- New search for: Babich, K.
In:
Microelectronic Engineering
;
84
, 9-10
;
1869-1873
;
2007
-
ISSN:
- Article (Journal) / Electronic Resource
-
Title:SrHfO3 as gate dielectric for future CMOS technology
-
Contributors:Rossel, C. ( author ) / Sousa, M. ( author ) / Marchiori, C. ( author ) / Fompeyrine, J. ( author ) / Webb, D. ( author ) / Caimi, D. ( author ) / Mereu, B. ( author ) / Ispas, A. ( author ) / Locquet, J.P. ( author ) / Siegwart, H. ( author )
-
Published in:Microelectronic Engineering ; 84, 9-10 ; 1869-1873
-
Publisher:
-
Publication date:2007-01-01
-
Size:5 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 84, Issue 9-10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1845
-
Materials and device structures for sub-32 nm CMOS nodesSkotnicki, Thomas et al. | 2007
- 1853
-
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacksNarayanan, V. / Paruchuri, V.K. / Cartier, E. / Linder, B.P. / Bojarczuk, N. / Guha, S. / Brown, S.L. / Wang, Y. / Copel, M. / Chen, T.C. et al. | 2007
- 1857
-
Modulation of the effective work function of fully-silicided (FUSI) gate stacksKittl, J.A. / Lauwers, A. / Pawlak, M.A. / Veloso, A. / Yu, H.Y. / Chang, S.Z. / Hoffmann, T. / Pourtois, G. / Brus, S. / Demeurisse, C. et al. | 2007
- 1861
-
0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrateOgawa, A. / Iwamoto, K. / Ota, H. / Morita, Y. / Ikeda, M. / Nabatame, T. / Toriumi, A. et al. | 2007
- 1865
-
Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layerSinganamalla, R. / Yu, H. / O’Sullivan, B.J. / Petry, J. / Mercha, A. / Paraschiv, V. / Volders, H. / Kubicek, S. / De Meyer, K. / Biesemans, S. et al. | 2007
- 1869
-
SrHfO3 as gate dielectric for future CMOS technologyRossel, C. / Sousa, M. / Marchiori, C. / Fompeyrine, J. / Webb, D. / Caimi, D. / Mereu, B. / Ispas, A. / Locquet, J.P. / Siegwart, H. et al. | 2007
- 1874
-
The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETsNegara, M.A. / Cherkaoui, K. / Majhi, P. / Young, C.D. / Tsai, W. / Bauza, D. / Ghibaudo, G. / Hurley, P.K. et al. | 2007
- 1878
-
Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiNSan Andrés, E. / Pantisano, L. / Severi, S. / Trojman, L. / Ferain, I. / Toledano-Luque, M. / Jurczak, M. / Groeseneken, G. / De Gendt, S. / Heyns, M. et al. | 2007
- 1882
-
Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacksFerain, I. / Pantisano, L. / Kottantharayil, A. / Petry, J. / Trojman, L. / Collaert, N. / Jurczak, M. / De Meyer, K. et al. | 2007
- 1886
-
Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniquesCosnier, V. / Besson, P. / Loup, V. / Vandroux, L. / Minoret, S. / Cassé, M. / Garros, X. / Pedini, J-M. / Lhostis, S. / Dabertrand, K. et al. | 2007
- 1890
-
La-based ternary rare-earth oxides as alternative high-κ dielectricsLopes, J.M.J. / Roeckerath, M. / Heeg, T. / Littmark, U. / Schubert, J. / Mantl, S. / Jia, Y. / Schlom, D.G. et al. | 2007
- 1890
-
La-based ternary rare-earth oxides as alternative high- kappa dielectricsLopes, J.M.J. / Roeckerath, M. / Heeg, T. / Littmark, U. / Schubert, J. / Mantl, S. / Jia, Y. / Schlom, D.G. et al. | 2007
- 1894
-
Thermal-stability improvement of LaON thin film formed using nitrogen radicalsSato, S. / Tachi, K. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Sugii, N. / Hattori, T. / Iwai, H. et al. | 2007
- 1898
-
Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacksChen, Shih-Chang / Chen, Yung-Yu / Chang, Yu-Tzu / Lou, Jen-Chung / Kin, Kon-Tsu / Chien, Chao-Hsin et al. | 2007
- 1902
-
Electrical and material property enhancement in HfTaSiON-gated MOS devices by tuning Hf compositionTsai, Ping-Hung / Chang-Liao, Kuei-Shu / Chang, Hsin-Chun / Wang, Tien-Ko / Wu, Wen-Fa et al. | 2007
- 1906
-
Dielectric quality and reliability of FUSI/HfSiON devices with process induced strainShickova, A. / Kaczer, B. / Simoen, E. / Verheyen, P. / Eneman, G. / Jurczak, M. / Absil, P. / Maes, H. / Groeseneken, G. et al. | 2007
- 1910
-
Reliability issues for nano-scale CMOS dielectricsRibes, G. / Rafik, M. / Roy, D. et al. | 2007
- 1917
-
A physics-based deconstruction of the percolation model of oxide breakdownSuñé, J. / Wu, E.Y. / Tous, S. et al. | 2007
- 1921
-
HCI degradation model based on the diffusion equation including the MVHR modelLachenal, D. / Monsieur, F. / Rey-Tauriac, Y. / Bravaix, A. et al. | 2007
- 1925
-
A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scalingRoussel, Ph.J. / Degraeve, R. / Sahhaf, S. / Groeseneken, G. et al. | 2007
- 1929
-
Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high-κ dielectric N-MOS Flash memory cellZhang, Y. / Ang, D.S. et al. | 2007
- 1934
-
Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFETJo, Minseok / Park, Hokyung / Chang, Man / Jung, Hyung-Suk / Lee, Jong-Ho / Hwang, Hyunsang et al. | 2007
- 1938
-
Hot-carrier damage from high to low voltage using the energy-driven frameworkGuerin, C. / Huard, V. / Bravaix, A. et al. | 2007
- 1943
-
Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injectionToledano-Luque, M. / Pantisano, L. / Degraeve, R. / Zahid, M.B. / Ferain, I. / San Andrés, E. / Groeseneken, G. / De Gendt, S. et al. | 2007
- 1947
-
Performance and reliability of ultra-thin oxide nMOSFETs under variable body biasCrupi, F. / Magnelli, L. / Falbo, P. / Lanuzza, M. / Nafría, M. / Rodríguez, R. et al. | 2007
- 1951
-
Impact of process conditions on interface and high-κ trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)Zahid, M.B. / Degraeve, R. / Zhang, J.F. / Groeseneken, G. et al. | 2007
- 1956
-
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolutionPorti, M. / Gerardin, S. / Nafrı´a, M. / Aymerich, X. / Cester, A. / Paccagnella, A. / Schiavuta, P. / Pierobon, R. et al. | 2007
- 1960
-
Analysis of the post-breakdown current in HfO2/TaN/TiN gate stack MOSFETs for low applied biasesMiranda, E. / Pey, K.L. / Ranjan, R. / Tung, C.H. et al. | 2007
- 1964
-
Charge carrier generation/trapping mechanisms in HfO2/SiO2 stackSamanta, Piyas / Zhu, Chunxiang / Chan, Mansun et al. | 2007
- 1968
-
Charge trapping in ultrathin Gd2O3 high-k dielectricNazarov, A.N. / Gomeniuk, Y.V. / Gomeniuk, Y.Y. / Gottlob, H.D.B. / Schmidt, M. / Lemme, M.C. / Czernohorsky, M. / Osten, H.J. et al. | 2007
- 1972
-
Reliability degradation of HfSiO gate dielectric layers: influence of nitridationVellianitis, G. / Pétry, J. / Hooker, J.C. / Delabie, A. / De Gendt, S. et al. | 2007
- 1976
-
Memory technology in the futureKim, Kinam / Lee, S.Y. et al. | 2007
- 1982
-
Resistive switching in a Pt/TiO2/Pt thin film stack – a candidate for a non-volatile ReRAMSchroeder, Herbert / Jeong, Doo Seok et al. | 2007
- 1986
-
Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidationIoannou-Sougleridis, V. / Dimitrakis, P. / Vamvakas, V.Em. / Normand, P. / Bonafos, C. / Schamm, S. / Cherkashin, N. / Ben Assayag, G. / Perego, M. / Fanciulli, M. et al. | 2007
- 1990
-
Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memoriesBeylier, G. / Bruyère, S. / Ghibaudo, G. et al. | 2007
- 1994
-
Nickel nanoparticle deposition at room temperature for memory applicationsVerrelli, E. / Tsoukalas, D. / Giannakopoulos, K. / Kouvatsos, D. / Normand, P. / Ioannou, D.E. et al. | 2007
- 1998
-
On the RTS phenomenon and trap nature in Flash memory tunnel oxideFantini, P. / Calderoni, A. / Sebastiani, A. / Ghidini, G. et al. | 2007
- 2002
-
Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealingChang, Man / Hasan, Musarrat / Jung, Seungjae / Park, Hokyung / Jo, Minseok / Choi, Hyejung / Kwon, Moonjae / Hwang, Hyunsang / Choi, Sangmoo et al. | 2007
- 2006
-
Impact of temperature on non-equilibrium Fowler-Nordheim EEPROM programmingBaboux, N. / Plossu, C. / Boivin, P. / Mirabel, J.M. et al. | 2007
- 2010
-
Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar siliconKukli, Kaupo / Niinistö, Jaakko / Tamm, Aile / Lu, Jun / Ritala, Mikko / Leskelä, Markku / Putkonen, Matti / Niinistö, Lauri / Song, Fuquan / Williams, Paul et al. | 2007
- 2014
-
The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitorsJuan, P.C. / Jiang, J.D. / Shih, W.C. / Lee, J.Y.M. et al. | 2007
- 2018
-
Fabrication and characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layerTokumitsu, E. / Takano, Y. / Shibata, H. / Saiki, H. et al. | 2007
- 2022
-
First principles investigation of defects at interfaces between silicon and amorphous high-κ oxidesBroqvist, Peter / Pasquarello, Alfredo et al. | 2007
- 2022
-
First principles investigation of defects at interfaces between silicon and amorphous high- kappa oxidesBroqvist, P. / Pasquarello, A. et al. | 2007
- 2028
-
Oxygen vacancies in high-k oxidesTse, K. / Liu, D. / Xiong, K. / Robertson, J. et al. | 2007
- 2032
-
Theoretical analysis of high-k dielectric gate stacksDemkov, A.A. / Sharia, O. / Lee, J.K. et al. | 2007
- 2035
-
Protons at the Si-SiO2 interface: a first principle investigationGodet, Julien / Pasquarello, Alfredo et al. | 2007
- 2039
-
Ab initio study of high permittivity phase stabilization in HfSiOFischer, D. / Kersch, A. et al. | 2007
- 2043
-
Electronic structure of insulator-confined ultra-thin Si channelsSushko, P.V. / Shluger, A.L. et al. | 2007
- 2047
-
Strain and channel engineering for fully depleted SOI MOSFETs towards the 32 nm technology nodeAndrieu, F. / Weber, O. / Ernst, T. / Faynot, O. / Deleonibus, S. et al. | 2007
- 2054
-
Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETsKelly, D.Q. / Lee, S. / Kalra, P. / Harris, R. / Oh, J. / Kirsch, P. / Banerjee, S.K. / Majhi, P. / Tseng, H. / Jammy, R. et al. | 2007
- 2058
-
Performance assessment of (110) p-FET high-κ/MG: is it mobility or series resistance limited?Trojman, L. / Pantisano, L. / Severi, S. / San Andres, E. / Hoffman, T. / Ferain, I. / De Gendt, S. / Heyns, M. / Maes, H. / Groeseneken, G. et al. | 2007
- 2063
-
High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETsKrishnamohan, T. / Jungemann, C. / Kim, D. / Ungersboeck, E. / Selberherr, S. / Pham, A.-T. / Meinerzhagen, B. / Wong, P. / Nishi, Y. / Saraswat, K.C. et al. | 2007
- 2067
-
Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivationKaczer, B. / De Jaeger, B. / Nicholas, G. / Martens, K. / Degraeve, R. / Houssa, M. / Pourtois, G. / Leys, F. / Meuris, M. / Groeseneken, G. et al. | 2007
- 2071
-
Multi-gate SOI MOSFETsColinge, J.P. et al. | 2007
- 2077
-
The impact of mobility enhanced technology on device performance and reliability for sub-90 nm SOI nMOSFETsYeh, Wen-Kuan et al. | 2007
- 2081
-
Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETsRafí, J.M. / Simoen, E. / Mercha, A. / Hayama, K. / Campabadal, F. / Ohyama, H. / Claeys, C. et al. | 2007
- 2085
-
Concurrent HCI-NBTI: worst case degradation condition for 65 nm p-channel SOI MOSFETsMishra, R. / Mitra, S. / Gauthier, R. / Ioannou, D.E. / Seguin, C. / Halbach, R. et al. | 2007
- 2089
-
Oxide interface studies using second harmonic generationTolk, N.H. / Alles, M.L. / Pasternak, R. / Lu, X. / Schrimpf, R.D. / Fleetwood, D.M. / Dolan, R.P. / Standley, R.W. et al. | 2007
- 2093
-
Electrical characteristic fluctuations in 16 nm bulk-FinFET devicesLi, Yiming / Hwang, Chih-Hong et al. | 2007
- 2097
-
Independent double-gate FinFETs with asymmetric gate stacksMasahara, M. / Surdeanu, R. / Witters, L. / Doornbos, G. / Nguyen, V.H. / Van den bosch, G. / Vrancken, C. / Devriendt, K. / Neuilly, F. / Kunnen, E. et al. | 2007
- 2101
-
Fin-height controlled TiN-gate FinFET CMOS based on experimental mobilityLiu, Y.X. / Matsukawa, T. / Endo, K. / Masahrara, M. / O’uchi, S. / Yamauchi, H. / Ishii, K. / Tsukada, J. / Ishikawa, Y. / Sakamoto, K. et al. | 2007
- 2105
-
High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETsCheng, W. / Teramoto, A. / Kuroda, R. / Hirayama, M. / Ohmi, T. et al. | 2007
- 2109
-
CMOS gate oxide defects induced by pre-gate plasma processCarrère, J-P. / Garnier, P. / Desvoivres, L. / Berthoud, A. / Lunenborg, M. et al. | 2007
- 2113
-
Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performanceAguilera, L. / Martı´n-Martı´nez, J. / Porti, M. / Rodrı´guez, R. / Cambrea, M. / Crupi, F. / Nafrı´a, M. / Aymerich, X. et al. | 2007
- 2117
-
Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devicesLi, Yiming / Yu, Shao-Ming / Chen, Hung-Ming et al. | 2007
- 2121
-
Low temperature influence on the uniaxially strained FD SOI nMOSFETs behaviorde Souza, M. / Pavanello, M.A. / Martino, J.A. / Simoen, E. / Claeys, C. et al. | 2007
- 2125
-
Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiationHayama, K. / Takakura, K. / Yoneoka, M. / Ohyama, H. / Rafí, J.M. / Mercha, A. / Simoen, E. / Claeys, C. et al. | 2007
- 2129
-
Investigation of polarization mechanisms on unibond buried oxide layerTsouti, V. / Papaioannou, G. / Jomaah, J. / Balestra, F. et al. | 2007
- 2133
-
III-V field-effect transistors for low power digital logic applicationsDatta, Suman et al. | 2007
- 2138
-
Compound semiconductor MOSFETsDroopad, R. / Rajagopalan, K. / Abrokwah, J. / Zurcher, P. / Passlack, M. et al. | 2007
- 2142
-
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstructionWebb, D.J. / Fompeyrine, J. / Nakagawa, S. / Dimoulas, A. / Rossel, C. / Sousa, M. / Germann, R. / Alvarado, S.F. / Locquet, J.P. / Marchiori, C. et al. | 2007
- 2146
-
Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristicsMartens, K. / Wang, W. / De Keersmaecker, K. / Borghs, G. / Groeseneken, G. / Maes, H. et al. | 2007
- 2150
-
Monte Carlo simulations of InGaAs nano-MOSFETsKalna, K. / Droopad, R. / Passlack, M. / Asenov, A. et al. | 2007
- 2154
-
Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOSBrammertz, G. / Heyns, M. / Meuris, M. / Caymax, M. / Jiang, D. et al. | 2007
- 2158
-
Device physics of capacitive MEMSFelnhofer, D. / Khazeni, K. / Mignard, M. / Tung, Y.J. / Webster, J.R. / Chui, C. / Gusev, E.P. et al. | 2007
- 2165
-
Atomic - vapour - deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applicationsLukosius, M. / Wenger, Ch. / Schroeder, T. / Dabrowski, J. / Sorge, R. / Costina, I. / Müssig, H.-J. / Pasko, S. / Lohe, Ch. et al. | 2007
- 2169
-
Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensorsBenoit, D. / Regolini, J. / Morin, P. et al. | 2007
- 2173
-
Stable and robust low-voltage pentacene transistor based on a hybrid dielectricHan, K. / Lee, S. / Kang, H.W. / Lee, H.H. et al. | 2007
- 2177
-
The evolution of multi-level air gap integration towards 32 nm node interconnectsDaamen, R. / Bancken, P.H.L. / Nguyen, V.H. / Humbert, A. / Verheijden, G.J.A.M. / Hoofman, R.J.O.M. et al. | 2007
- 2184
-
Integration of gas cluster process for copper interconnects reliability improvement and process impact evaluation on BEOL dielectric materialsGras, R. / Gosset, L.G. / Hopstaken, M. / Bouyssou, R. / Chevolleau, T. / Petitprez, E. / Girault, V. / Jullian, S. / Guillan, J. / Imbert, G. et al. | 2007
- 2188
-
UV-O3 treatment effects on structural changes of low-k thin filmsHeo, Jaeyeong / Eom, Dail / Kim, Hyeong Joon et al. | 2007
- 2192
-
Improved electrical characteristics of high-k gated MOS devices by nitrogen incorporation with plasma immersion ion implantation (PIII)Tsai, Ping-Hung / Chang-Liao, Kuei-Shu / Kao, H.Y. / Wang, T.K. / Huang, S.F. / Tsai, W.F. / Ai, C.F. et al. | 2007
- 2196
-
Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high-κ gate oxidesSchaeffer, J.K. / Gilmer, D.C. / Capasso, C. / Kalpat, S. / Taylor, B. / Raymond, M.V. / Triyoso, D. / Hegde, R. / Samavedam, S.B. / White, B.E. Jr et al. | 2007
- 2201
-
Extraction of gate-edge workfunction of metal gate and its impact on scaled MOSFETsMise, N. / Matsuki, T. / Watanabe, T. / Eimori, T. / Nara, Y. et al. | 2007
- 2205
-
Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technologyHasan, Musarrat / Park, Hokyung / Lee, Joon-myong / Jo, Minseak / Hwang, Hyunsang et al. | 2007
- 2209
-
Application of combinatorial methodologies for work function engineering of metal gate/high-κ advanced gate stacksGreen, M.L. / Chang, K.-S. / DeGendt, S. / Schram, T. / Hattrick-Simpers, J. et al. | 2007
- 2213
-
Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gatesLi, Z. / Schram, T. / Pantisano, L. / Witters, T. / Stesmans, A. / Akheyar, A. / Afanasiev, V.V. / Yamada, N. / Takaaki, T. / De Gendt, S. et al. | 2007
- 2217
-
Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devicesChoi, C. / Cartier, E. / Wang, Y.Y. / Narayanan, V. / Khare, M. et al. | 2007
- 2222
-
Integration of functional epitaxial oxides into silicon: from high-k application to nanostructuresOsten, H.J. / Czernohorsky, M. / Dargis, R. / Laha, A. / Kühne, D. / Bugiel, E. / Fissel, A. et al. | 2007
- 2226
-
Enhancement in thermal stability of atomic layer deposited HfO2 films by using top Hf metal layerPark, Tae Joo / Kim, Jeong Hwan / Jang, Jae Hyuck / Seo, Minha / Na, Kwang Duk / Hwang, Cheol Seong et al. | 2007
- 2230
-
Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurementsXiong, H.D. / Heh, D. / Gurfinkel, M. / Li, Q. / Shapira, Y. / Richter, C. / Bersuker, G. / Choi, R. / Suehle, J.S. et al. | 2007
- 2235
-
Electrical characterization of directly deposited La-Sc oxides complex for gate insulator applicationKawanago, T. / Tachi, K. / Song, J. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Sugii, N. / Hattori, T. / Iwai, H. et al. | 2007
- 2239
-
Hafnium silicate as control oxide in non-volatile memoriesErlbacher, T. / Bauer, A.J. / Ryssel, H. et al. | 2007
- 2243
-
Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxidesMerckling, C. / El-Kazzi, M. / Becerra, L. / Largeau, L. / Patriarche, G. / Saint-Girons, G. / Hollinger, G. et al. | 2007
- 2247
-
Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(111)Sokolov, N.S. / Grekhov, I.V. / Ikeda, S. / Kaveev, A.K. / Krupin, A.V. / Saiki, K. / Tsutsui, K. / Tyaginov, S.E. / Vexler, M.I. et al. | 2007
- 2251
-
Monitoring plasma nitridation of HfSiOx by corona charge measurementsEveraert, J-L. / Shi, X. / Rothschild, A. / Schaekers, M. / Rosseel, E. / Pavelka, T. / Don, E. / Vanhaelemeersch, S. et al. | 2007
- 2255
-
Effect of degas before metal gate deposition on the threshold voltagePétry, J. / Xiong, K. / Ragnarsson, L.-A. / Singanamalla, R. / Hooker, J. et al. | 2007
- 2259
-
Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regionsLucovsky, G. / Whitten, J.L. et al. | 2007
- 2263
-
Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on SiZenkevich, A. / Lebedinskii, Yu. / Spiga, S. / Wiemer, C. / Scarel, G. / Fanciulli, M. et al. | 2007
- 2267
-
Experimental and theoretical study of Ge surface passivationHoussa, M. / Pourtois, G. / Kaczer, B. / De Jaeger, B. / Leys, F.E. / Nelis, D. / Paredis, K. / Vantomme, A. / Caymax, M. / Meuris, M. et al. | 2007
- 2274
-
Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phononsSrinivasan, P. / Linder, B.P. / Narayanan, V. / Misra, D. / Cartier, E. et al. | 2007
- 2278
-
Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3Afanas’ev, V.V. / Shamuilia, S. / Badylevich, M. / Stesmans, A. / Edge, L.F. / Tian, W. / Schlom, D.G. / Lopes, J.M.J. / Roeckerath, M. / Schubert, J. et al. | 2007
- 2282
-
Engineering the interface between epitaxial lanthanide oxide thin films and Si substrates: a route towards tuning the electrical propertiesLaha, Apurba / Fissel, A. / Osten, H.J. et al. | 2007
- 2286
-
Nanoscale imaging and X-ray spectroscopy of electrically active defects in ultra thin dielectrics on siliconBernardini, S. / Ishii, M. / Whittaker, E. / Hamilton, B. / Freeland, J.W. / Poolton, N.R.J. / De Gendt, S. et al. | 2007
- 2290
-
Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacksEfthymiou, E. / Bernardini, S. / Volkos, S.N. / Hamilton, B. / Zhang, J.F. / Uppal, H.J. / Peaker, A.R. et al. | 2007
- 2294
-
Studies of solution processed metal oxides on siliconShanmugasundaram, K. / Brubaker, M. / Chang, K. / Mumbauer, P. / Roman, P. / Ruzyllo, J. et al. | 2007
- 2298
-
Length scales for coherent π-bonding interactions in complex high-k oxide dielectrics and their interfacesSeo, H. / Lucovsky, G. / Fleming, L.B. / Ulrich, M.D. / Lüning, J. / Koster, G. / Geballe, T.H. et al. | 2007
- 2302
-
Core level photoemission study of nitrided hafnium silicate thin filmsBarrett, N. / Renault, O. / Besson, P. / Le Tiec, Y. / Martin, F. / Calvat, F. et al. | 2007
- 2306
-
Current transport mechanisms in (HfO2)x(SiO2) 1−x/SiO2gate stacksMitrovic, I.Z. / Lu, Y. / Buiu, O. / Hall, S. et al. | 2007
- 2310
-
Modified space-charge limited conduction in tantalum pentoxide MIM capacitorsMartinez, V. / Besset, C. / Monsieur, F. / Montès, L. / Ghibaudo, G. et al. | 2007
- 2314
-
Gate dielectric formation and MIS interface characterization on GeTakagi, S. / Maeda, T. / Taoka, N. / Nishizawa, M. / Morita, Y. / Ikeda, K. / Yamashita, Y. / Nishikawa, M. / Kumagai, H. / Nakane, R. et al. | 2007
- 2320
-
In-depth investigation of the mechanisms impacting C-V/G-V characteristics of Ge/GeON/HfO2/TiN stacks by electrical modelingBatude, P. / Garros, X. / Clavelier, L. / Le Royer, C. / Hartmann, J.M. / Loup, V. / Besson, P. / Vandroux, L. / Deleonibus, S. / Boulanger, F. et al. | 2007
- 2324
-
Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectricMavrou, G. / Galata, S.F. / Sotiropoulos, A. / Tsipas, P. / Panayiotatos, Y. / Dimoulas, A. / Evangelou, E.K. / Seo, J.W. / Dieker, Ch. et al. | 2007
- 2328
-
Epitaxial germanium-on-insulator grown on (001) SiSeo, J.W. / Dieker, Ch. / Tapponnier, A. / Marchiori, Ch. / Sousa, M. / Locquet, J.-P. / Fompeyrine, J. / Ispas, A. / Rossel, C. / Panayiotatos, Y. et al. | 2007
- 2332
-
Band engineering in the high-k dielectrics gate stacksWang, S.J. / Dong, Y.F. / Feng, Y.P. / Huan, A.C.H. et al. | 2007
- 2336
-
Improvement of interfacial properties with interfacial layer in La2O3/Ge structureSong, J. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Sugii, N. / Hattori, T. / Iwai, H. et al. | 2007
- 2340
-
Improved reliability of Ge MOS capacitor with HfTiON high-k dielelctric by using Ge surface pretreatment in wet NOLi, C.X. / Lai, P.T. / Xu, J.P. et al. | 2007
- 2340
-
Improved reliability of Ge MOS capacitor with HfTiON high-k dielelectric by using Ge surface pretreatment in wet NOLai, P.T. / Li, C.X. / Xu, J.P. et al. | 2007
- 2344
-
Hydrogen effects in MOS devicesTsetseris, L. / Fleetwood, D.M. / Schrimpf, R.D. / Zhou, X.J. / Batyrev, I.G. / Pantelides, S.T. et al. | 2007
- 2350
-
Defect reduction by suppression of π-bonding coupling in nano- and non-crystalline high-(medium)-κ gate dielectricsLucovsky, G. / Seo, H. / Lee, S. / Fleming, L.B. / Ulrich, M.D. / Lüning, J. et al. | 2007
- 2354
-
Hydrogen induced positive charge in Hf-based dielectricsZhao, C.Z. / Zhang, J.F. / Zahid, M.B. / Efthymiou, E. / Lu, Y. / Hall, S. / Peaker, A.R. / Groeseneken, G. / Pantisano, L. / Degraeve, R. et al. | 2007
- 2362
-
Intrinsic and defect-assisted trapping of electrons and holes in HfO2: an ab initio studyRamo, D. Muñoz / Gavartin, J.L. / Shluger, A.L. / Bersuker, G. et al. | 2007
- 2366
-
Evidence of hafnia oxygen vacancy defects in MOCVD grown HfxSi1−xOy ultrathin gate dielectrics gated with Ru electrodeŤapajna, M. / Rosová, A. / Hušeková, K. / Roozeboom, F. / Dobročka, E. / Fröhlich, K. et al. | 2007
- 2370
-
Oxygen-related defects in amorphous HfO2 gate dielectricsKaneta, C. / Yamasaki, T. et al. | 2007
- 2374
-
Extrinsic stacking fault generation related to high–k dielectric growth on a Si substrateVolkos, S.N. / Bernardini, S. / Rigopoulos, N. / Efthymiou, E.S. / Hawkins, I.D. / Hamilton, B. / Dobaczewski, L. / Hall, S. / Hurley, P.K. / Delabie, A. et al. | 2007
- 2378
-
EPR study of defects in as-received, γ-irradiated and annealed monoclinic HfO2 powderWright, Sandra / Feeney, S. / Barklie, R.C. et al. | 2007
- 2378
-
EPR study of defects in as-received, gamma-irradiated and annealed monoclinic HfO2 powderBarklie, R.C. / Wright, S. / Feeney, S. et al. | 2007
- 2382
-
Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETsArmand, J. / Martinez, F. / Valenza, M. / Rochereau, K. / Vincent, E. et al. | 2007
- 2386
-
Characterization of chemical bonding features and defect state density in HfSiOx Ny/SiO2 gate stackOhta, A. / Munetaka, Y. / Tsugou, A. / Makihara, K. / Murakami, H. / Higashi, S. / Miyazaki, S. / Inumiya, S. / Nara, Y. et al. | 2007
- 2390
-
Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transientsLu, Y. / Hall, S. / Buiu, O. / Zhang, J.F. et al. | 2007
- 2394
-
Long time transients in hafnium oxidePuzzilli, G. / Irrera, F. et al. | 2007
- 2398
-
Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applicationsAsenov, A. / Kalna, K. / Thayne, I. / Hill, R.J.W. et al. | 2007
- 2404
-
Modeling of remote Coulomb scattering limited mobility in MOSFET with HfO2/SiO2 gate stacksBarraud, S. / Thevenod, L. / Cassé, M. / Bonno, O. / Mouis, M. et al. | 2007
- 2408
-
Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacksLeroux, C. / Allain, F. / Toffoli, A. / Ghibaudo, G. / Reimbold, G. et al. | 2007
- 2412
-
Modeling HfO2/SiO2/Si interfaceGavartin, J.L. / Shluger, A.L. et al. | 2007
- 2416
-
Amorphous hafnium silicates: structural, electronic and dielectric propertiesBroqvist, Peter / Pasquarello, Alfredo et al. | 2007
- 2420
-
Author Index| 2007
- IFC
-
Inside Front Cover - Editorial Board| 2007
- iv
-
Contents| 2007
- xiii
-
PrefaceDimoulas, A. / Normand, P. et al. | 2007
- xiv
-
INFOS 2007 Conference Committees| 2007
- xv
-
Acknowledgements| 2007