Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures (English)
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In:
Surface Science
;
168
, 1-3
;
665-671
;
1985
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures
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Contributors:Herms, A. ( author ) / Morante, J.R. ( author ) / Samitier, J. ( author ) / Cornet, A. ( author ) / Cartujo, P. ( author ) / Lora-Tamayo, E. ( author )
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Published in:Surface Science ; 168, 1-3 ; 665-671
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Publisher:
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Publication date:1985-07-12
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 168, Issue 1-3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Atomic geometries of zincblende compound semiconductor surfaces: Similarities in surface rehybridizationsKahn, A. et al. | 1985
- 16
-
Some recent results on low-temperature studies of cleaved Si and Ge surfacesGrazhulis, V.A. et al. | 1985
- 28
-
The effect of surface states and band bending change on reflectivity of cleaved GaAs(110) and GaP(110)Ciccacci, F. / Selci, S. / Chiarotti, G. / Chiaradia, P. / Cricenti, A. et al. | 1985
- 35
-
Optical and electron energy-loss spectra of Si(111)2 × 1Selloni, A. / Del Sole, R. et al. | 1985
- 46
-
The effect of surface stress on the reconstruction of the Si(111) surfacePearson, E. / Halicioglu, T. / Tiller, W.A. et al. | 1985
- 52
-
On the evaporation rate of siliconSouchière, J.L. / Binh, Vu Thien et al. | 1985
- 59
-
Cleanliness and pollution of Si(111) and Si(100) surface studied by AESVignes, J.-L. / Denjean, P. / Le Héricy, J. / Langeron, J.-P. et al. | 1985
- 68
-
Electronic properties of the InP(100) surfaceMoison, J.M. / Bensoussan, M. et al. | 1985
- 74
-
Initial formation process of metal/silicon interfacesHiraki, Akio et al. | 1985
- 100
-
Initial stages of the Schottky-barrier formation for abrupt covalent interfacesPlatero, G. / Vergés, J.A. / Flores, F. et al. | 1985
- 105
-
Electronic structure of Si(111) surfaces with group III ad-atomsHansson, G.V. / Nicholls, J.M. / MÅrtensson, P. / Uhrberg, R.I.G. et al. | 1985
- 114
-
Effect of valency in metal adsorption on Si(111): The case of Sb on the cleaved surfaceTaleb-Ibrahimi, A. / Sébenne, C.A. et al. | 1985
- 122
-
Formation of noble-metal-Si(100) interfacesHanbücken, M. / Le Lay, G. et al. | 1985
- 133
-
Sem observations of Ag surface diffusion at the Si(111)√3-Ag interfaceHanbücken, M. / Doust, T. / Osasona, O. / Le Lay, G. / Venables, J.A. et al. | 1985
- 142
-
Coupled interface plasmons of the Ag-Si(111) system as investigated with high-resolution electron energy-loss spectroscopyLayet, J.M. / Contini, R. / Derrien, J. / Lüth, H. et al. | 1985
- 149
-
Ion-beam-induced amorphization of silicon surfaces: Role on the formation of Au/Si(100) interfacesCarrière, B. / Deville, J.P. / El Maachi, A. et al. | 1985
- 158
-
Characterization of Cu/Si(100) interfaces by different surface-sensitive techniquesMathiez, P. / Daugy, E. / Salvan, F. / Metois, J.J. / Hanbücken, M. et al. | 1985
- 164
-
Importance of coulomb correlation in silicide spectraCalandra, C. / Bisi, O. / Del Pennino, U. / Valeri, S. / Xi, Yiming et al. | 1985
- 171
-
Structural and electronic properties of CoSi2 epitaxially grown on Si(111)Derrien, J. et al. | 1985
- 184
-
Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfacesHo, P.S. / Liehr, M. / Schmid, P.E. / Legoues, F.K. / Yang, E.S. / Evans, H.L. / Wu, X. et al. | 1985
- 193
-
Synchrotron radiation studies of the effect of thermal treatment on the Si(111)-Yb interfacesBraicovich, L. / Abbati, I. / Carbone, C. / Nogami, J. / Lindau, I. et al. | 1985
- 204
-
Electron energy-loss spectroscopy of Ni2Si: Valence collective excitation and structural propertiesBetti, M.G. / Rinaldi, C. / Sassaroli, P. / Sorba, L. / Nannarone, S. / de Crescenzi, M. / del Pennino, U. / Mariani, C. / Valeri, S. et al. | 1985
- 212
-
Thin film reactions on silicon surfaces and the quality of metal-semiconductor interfacesMorgen, P. / Jørgensen, B. / Rasmussen, J. / Labunov, V.A. / Nylandsted Larsen, A. et al. | 1985
- 225
-
First stages of the Mo/Si(III) interface formation: An UPS, LEED and Auger studyBalaska, H. / Cinti, R.C. / Nguyen, T.T.A. / Derrien, J. et al. | 1985
- 234
-
Inverse and direct photoemission experiments (UV range) of the Si/Ni interfacesAzizan, M. / Baptist, R. / Chauvet, G. / Nguyen Tan, T.A. et al. | 1985
- 240
-
The mechanisms of Schottky barrier pinning in III–V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experimentsSpicer, W.E. / Kendelewicz, T. / Newman, N. / Chin, K.K. / Lindau, I. et al. | 1985
- 260
-
Promoting and characterizing new chemical structure at metal-semiconductor interfacesBrillson, L.J. et al. | 1985
- 275
-
Calculation of Schottky barrier heights from semiconductor band structuresTersoff, J. et al. | 1985
- 285
-
Theoretical models of metal-semiconductor contactsSchluter, M. et al. | 1985
- 290
-
The effects of microstructure on interface characterizationLudeke, R. et al. | 1985
- 301
-
The formation of the AuGaAs(001) interfaceAndersson, Thorwald G. / Kanski, Janusz / Le Lay, Guy / Svensson, Stefan P. et al. | 1985
- 309
-
Modeling homogeneous and heterogeneous metal/semiconductor interface reactions with photoemission and angle-resolved auger spectroscopyDel Guidice, M. / Grioni, M. / Joyce, J.J. / Ruckman, M.W. / Chambers, S.A. / Weaver, J.H. et al. | 1985
- 323
-
Metal contacts to semiconductors, indium phosphide and cadmium tellurideWilliams, R.H. / Dharmadasa, I.M. / Patterson, M.H. / Maani, C. / Forsyth, N.M. et al. | 1985
- 336
-
Formation and properties of (Au, Al, Ag, In) (InP-GaAs) Schottky diodes; contribution of the semiconductor surface to the diode characteristicsLassabatère, L. / Ismail, A. / Palau, J.M. / Ben Brahim, A. et al. | 1985
- 347
-
Chemical and morphological aspects of the build-up of the interface between InP(100) and column III metal overlayersHouzay, F. / Bensoussan, M. / Barthe, F. et al. | 1985
- 356
-
Comparison between metal and electrolyte/(III–V) semiconductor interfacesAllongue, Philippe / Cachet, Hubert et al. | 1985
- 365
-
Film and interface properties of epitaxial metal/insulator/semiconductor systems formed by ionized cluster beam depositionYamada, I. / Usui, H. / Inokawa, H. / Takagi, T. et al. | 1985
- 376
-
Theoretical interpretation of Schottky barriers and ohmic contactsAllen, Roland E. / Sankey, Otto F. / Dow, John D. et al. | 1985
- 386
-
The effect of surface preparation and properties on AgGaAs (100) Schottky diodesIsmail, A. / Palau, J.M. / Lassabatère, L. et al. | 1985
- 395
-
Investigation of interfacial reactions between thin films of gold and substrates of gallium arsenide by transmission electron microscopyBauer, C.L. et al. | 1985
- 404
-
Thermally-induced reactions at Pt-GaAs JunctionsCros, A. et al. | 1985
- 409
-
The adsorption of oxygen on InP cleaved surfaces and its influence on schottky barrier propertiesIsmail, A. / Ben Brahim, A. / Palau, J.M. / Lassabatère, L. et al. | 1985
- 416
-
Schottky barrier formation in CdTe crystalMamiński, J.A. / Orlowski, B.A. et al. | 1985
- 423
-
RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsJoyce, B.A. / Dobson, P.J. / Neave, J.H. / Woodbridge, K. / Zhang, Jing / Larsen, P.K. / Bôlger, B. et al. | 1985
- 439
-
Do we understand heterojunction band discontinuities?Margaritondo, G. et al. | 1985
- 454
-
GaAs/Ga1−xAlxAs and Ga1−xAlxAs/GaAs heterointerfaces grown by molecular beam epitaxyAlexandre, F. / Lievin, J.L. / Meynadier, M.H. / Delalande, C. et al. | 1985
- 462
-
Growth and characterization of IV–VI superlatticesBauer, G. et al. | 1985
- 473
-
CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterizationFaurie, J.P. / Hsu, C. / Sivananthan, S. / Chu, X. et al. | 1985
- 483
-
Silicon MBE: Recent developmentsArnaud D'Avitaya, F. / Delage, S. / Rosencher, E. et al. | 1985
- 498
-
Heterojunction band discontinuities for GaAs grown on Ge(110): Time variationGrant, R.W. / Waldrop, J.R. / Kowalczyk, S.P. / Kraut, E.A. et al. | 1985
- 507
-
Amorphous semiconductor heterojunctions: Technological impactPerfetti, P. et al. | 1985
- 518
-
Defective heterojunction modelsFreeouf, J.L. / Woodall, J.M. et al. | 1985
- 531
-
Optical investigations of GaAs-Ga(Al)As interfaces in quantum wellsDelalande, C. et al. | 1985
- 538
-
Photoemission study of a single GaAlAs/GaAs/GaAlAs quantum wellHoudré, R. / Hermann, C. / Lampel, G. / Frijlink, P.M. et al. | 1985
- 546
-
Misfit strains in semiconductor superlatticesVoisin, Paul et al. | 1985
- 553
-
Electronic structure of (100) semiconductor heterojunctionsPlatero, G. / Sánchez-Dehesa, J. / Tejedor, C. / Flores, F. et al. | 1985
- 558
-
Study of the cancellation of the lattice mismatch in GaSb-AlSb superlatticesCalleja, J.M. / Meseguer, F. / Tejedor, C. / Méndez, E.E. / Chang, C.-A. / Esaki, L. et al. | 1985
- 564
-
Interface structure in heteroepitaxial CdTe on GaAs(100)Ponce, F.A. / Anderson, G.B. / Ballingall, J.M. et al. | 1985
- 571
-
Characterization of epitaxial ZnS films fabricated by sputtering in controlled H2S vaporKawakami, Yoichi / Taguchi, Tsunemasa / Hiraki, Akio et al. | 1985
- 577
-
On the oxidation of III–V compound semiconductorsMönch, Winfried et al. | 1985
- 594
-
High-resolution infrared spectroscopy of adsorbates on semiconductor surfaces: Hydrogen on Si(100) and Ge(100)Chabal, Y.J. et al. | 1985
- 609
-
Si(111) surface oxidation: O 1s core-level study using synchrotron radiationHollinger, G. / Morar, J.F. / Himpsel, F.J. / Hughes, G. / Jordan, J.L. et al. | 1985
- 617
-
Early stages in the formation of the oxide-InP(110) interfaceHollinger, G. / Hughes, G. / Himpsel, F.J. / Jordan, J.L. / Morar, J.F. / Houzay, F. et al. | 1985
- 626
-
Molecular beam epitaxy of insulating fluoride-semiconductor heterostructuresMunoz-Yague, A. / Fontaine, C. et al. | 1985
- 635
-
Study of the interaction of plasmas with III–V semiconductor surfaces, application to passivationFriedel, P. / Gourrier, S. / Theeten, J.B. / Arnoult, D. / Taillepied, M. / Erman, M. et al. | 1985
- 645
-
Non-equilibrium depletion relaxation at silicon surfaces in strong electric fieldsKirillova, S.I. / Primachenko, V.E. / Snitko, O.V. et al. | 1985
- 652
-
Depth profiling of plasma anodized SiO2/Si interface structures by using X-ray photoelectron spectroscopySuda, Kakutaro / Hattori, Takeo et al. | 1985
- 657
-
Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurementsPananakakis, G. / Kamarinos, G. et al. | 1985
- 665
-
Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structuresHerms, A. / Morante, J.R. / Samitier, J. / Cornet, A. / Cartujo, P. / Lora-Tamayo, E. et al. | 1985
- 672
-
A LEED, AES and TDS study of very thin nitride film growth on Si(100) by direct thermal nitridation in NH3Glachant, A. / Saidi, D. / Delord, J.F. et al. | 1985
- 681
-
Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)Fontaine, C. / Castano, J.L. / Castagné, J. / Munoz-Yague, A. et al. | 1985
- 688
-
Thin films of solid solutions of fluorides for epitaxy on III–V semiconductorsBarrière, A.S. / Couturier, G. / Gevers, G. / Grannec, J. / Ricard, H. / Sribi, C. et al. | 1985
- 701
-
High-resolution Rutherford backscattering spectrometry of metal-silicon interfacesvan der Veen, J.F. / van Loenen, E.J. et al. | 1985
- 713
-
Structure analysis of Ag overlayers on Si(111) by low-energy Li+ ion scatteringAono, M. / Souda, R. / Oshima, C. / Ishizawa, Y. et al. | 1985
- 724
-
Order and structure of semiconductor surfaces: An assessment with He diffractionCardillo, M.J. / Lambert, W.R. et al. | 1986
- 734
-
Tunneling microscopy and spectroscopy of semiconductor surfaces and interfacesBaratoff, A. / Binnig, G. / Fuchs, H. / Salvan, F. / Stoll, E. et al. | 1985
- 744
-
LEED studies of defects at surfaces and interfacesHenzler, M. et al. | 1985
- 751
-
High-resolution electron microscopy of the initial stages of CoSi2 formation on Si(111)D'Anterroches, Cécile et al. | 1985
- 764
-
Inverse photoemission as a probe for unoccupied electronic statesHimpsel, F.J. / Straub, D. et al. | 1985
- 773
-
Investigation of electronic properties of semiconductor interfaces and layer systems by electron energy-loss spectroscopyLüth, Hans et al. | 1985
- 787
-
X-ray absorption resonance spectroscopy as a local probe of the electronic structure at metal-semiconductor interfaces and silicide: Pt/Si, Pd/Si, and Yb/SiRossi, G. / Roubin, P. / Chandesris, D. / Lecante, J. et al. | 1985
- 795
-
Scanning tunneling microscopy of nanocrystalline silicon surfacesGimzewski, J.K. / Humbert, A. / Pohl, D.W. / Vepřek, S. et al. | 1985
- 801
-
Local structure determination of the CoSi(111) interface by surface electron energy-loss fine-structure techniqueChaînet, E. / De Crescenzi, M. / Derrien, J. / Nguyen, T.T.A. / Cinti, R.C. et al. | 1985
- 810
-
Scanning auger microscopy for the characterization of very thin epitaxial layers in III–V compoundsBresse, J.F. et al. | 1985
- 816
-
Rayleigh scattering from single-site polysylane adsorbed on silicon: TheoryWijers, C.M.J. et al. | 1985
- 823
-
The InP/Sb interface studied by raman scatteringZahn, D. / Esser, N. / Pletschen, W. / Geurts, J. / Richter, W. et al. | 1985
- 830
-
Investigation of metal-semiconductor interface states by constant emission rate and constant capture rate capacitance spectroscopiesMuret, P. / Deneuville, A. et al. | 1985
- 838
-
Experimental evidence of gap states in metal-GaAs interfacesChekir, F. / Barret, C. et al. | 1985
- 846
-
Summary of the round table discussion: future trends| 1986
- 847
-
Trends in quantum well devicesNoblanc, J.P. et al. | 1986
- 852
-
An important problem: The interface band offsetsVoos, M. et al. | 1986
- 855
-
Comments on round table discussion on future trendsHo, Paul S. et al. | 1986
- 858
-
Round table discussion| 1986
- 860
-
Concluding remarks - international conference on the formation of semiconductor interfacesLindau, I. et al. | 1986
- 865
-
Author index| 1986
- 874
-
Subject index| 1986
- ii
-
Editorial Board| 1986
- ix
-
PrefaceLe Lay, Guy / Derrien, Jacques / Sébenne, Claude et al. | 1986
- vii
-
Conference organisation| 1986