Oxygen chemiluminescence in He plasma as a method for plasma damage evaluation (English)
- New search for: Urbanowicz, A.M.
- New search for: Shamiryan, D.
- New search for: Baklanov, M.R.
- New search for: De Gendt, S.
- New search for: Urbanowicz, A.M.
- New search for: Shamiryan, D.
- New search for: Baklanov, M.R.
- New search for: De Gendt, S.
In:
Microelectronic Engineering
;
85
, 10
;
2164-2168
;
2008
-
ISSN:
- Article (Journal) / Electronic Resource
-
Title:Oxygen chemiluminescence in He plasma as a method for plasma damage evaluation
-
Contributors:Urbanowicz, A.M. ( author ) / Shamiryan, D. ( author ) / Baklanov, M.R. ( author ) / De Gendt, S. ( author )
-
Published in:Microelectronic Engineering ; 85, 10 ; 2164-2168
-
Publisher:
- New search for: Elsevier B.V.
-
Publication date:2008-03-17
-
Size:5 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 85, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1937
-
Proceedings of the Twelfth European Workshop on Materials for Advanced Metallization 2008Schulz, Stefan E. / Körner, Heinrich / Zschech, Ehrenfried et al. | 2008
- 1940
-
Integration of high-performance RF passive modules (MIM capacitors and inductors) in advanced BEOLFarcy, A. / Carpentier, J.-F. / Thomas, M. / Torres, J. / Ancey, P. et al. | 2008
- 1947
-
Barrier and seed layer coverage in 3D structures with different aspect ratios using sputtering and ALD processesLühn, O. / Van Hoof, C. / Ruythooren, W. / Celis, J.-P. et al. | 2008
- 1952
-
High aspect ratio copper through-silicon-vias for 3D integrationSong, Chongshen / Wang, Zheyao / Chen, Qianwen / Cai, Jian / Liu, Litian et al. | 2008
- 1957
-
High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seedDruais, G. / Dilliway, G. / Fischer, P. / Guidotti, E. / Lühn, O. / Radisic, A. / Zahraoui, S. et al. | 2008
- 1962
-
Impact of dummy metal filling strategy dedicated to inductors integrated in advanced thick copper RF BEOLPastore, C. / Gianesello, F. / Gloria, D. / Serret, E. / Benech, Ph. et al. | 2008
- 1967
-
Mechanical reliability evaluation of Sn-37Pb solder joint using high speed lap-shear testJeon, Seong-jae / Hyun, Seungmin / Lee, Hak-Joo / Kim, Jong-Woong / Ha, Sang-Su / Yoon, Jeong-Won / Jung, Seung-Boo / Lee, Hoo-Jeong et al. | 2008
- 1971
-
Toward the integration of a single carbon nanofibre as via interconnectCoiffic, J.C. / Poche, H. Le / Mariolle, D. / Chevalier, N. / Olivier, S. / Fayolle, M. / Maitrejean, S. et al. | 2008
- 1975
-
Self-assembled metallic nanocrystal structures for advanced non-volatile memory applicationsHofmann, Ralf / Krishna, Nety et al. | 2008
- 1979
-
Controlling the formation of nanoparticles for definite growth of carbon nanotubes for interconnect applicationsHermann, Sascha / Ecke, Ramona / Schulz, Stefan / Gessner, Thomas et al. | 2008
- 1984
-
Fabrication of CNTs/Cu composite thin films for interconnects applicationLiu, Ping / Xu, Dong / Li, Zijiong / Zhao, Bo / Kong, Eric Siu-Wai / Zhang, Yafei et al. | 2008
- 1988
-
Characterization of copper grain growth limitations inside narrow wires depending of overburden thicknessDubreuil, O. / Cordeau, M. / Mourier, Th. / Chausse, P. / Mellier, M. / Bellet, D. / Torres, J. et al. | 2008
- 1992
-
Electronic transport properties in copper nanowireMohammadzadeh, Saeideh / Pouladsaz, Davoud / Streiter, Reinhard / Gessner, Thomas et al. | 2008
- 1995
-
Atom probe tomography of Ni silicides: First stages of reaction and redistribution of PtMangelinck, D. / Hoummada, K. / Cojocaru-Mirédin, O. / Cadel, E. / Perrin-Pellegrino, C. / Blavette, D. et al. | 2008
- 2000
-
Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interfaceTsutsui, Kazuo / Shiozawa, Takashi / Nagahiro, Koji / Ohishi, Yoshihisa / Kakushima, Kuniyuki / Ahmet, Parhat / Urushihara, Nobuyuki / Suzuki, Mineharu / Iwai, Hiroshi et al. | 2008
- 2005
-
Nitrogen impurity effects on nickel silicide formation at low temperatures – New “nitrogen co-plasma” approachImbert, B. / Gregoire, M. / Zoll, S. / Beneyton, R. / Del-Medico, S. / Trouiller, C. / Thomas, O. et al. | 2008
- 2009
-
A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrierZhao, C. / Ahn, J.Y. / Horiguchi, N. / Demuynck, S. / Tőkei, Zs. et al. | 2008
- 2013
-
Study of Ni/Si(100) solid-state reaction with Y additionHuang, Yi-Fei / Jiang, Yu-Long / Ru, Guo-Ping / Qu, Xin-Ping / Li, Bing-Zong et al. | 2008
- 2016
-
Sputtering of Ni/Ti/SiC ohmic contactsMachac, Petr / Barda, Bohumil / Hubickova, Marie et al. | 2008
- 2019
-
Gentle FUSI NiSi metal gate process for high-k dielectric screeningGottlob, H.D.B. / Lemme, M.C. / Schmidt, M. / Echtermeyer, T.J. / Mollenhauer, T. / Kurz, H. / Cherkaoui, K. / Hurley, P.K. / Newcomb, S.B. et al. | 2008
- 2022
-
Ti and Ti/Sb ohmic contacts on n-type 6H–SiCBarda, Bohumil / Macháč, Petr / Hubičková, Marie et al. | 2008
- 2025
-
The integration of alternative contact cleaning techniques for future DRAM technology nodesStavrev, Momtchil / Fitz, Clemens / Thuemmel, Ines / Beckert, Audrey / Schupke, Kristin / Schmidbauer, Sven / Graf, Werner et al. | 2008
- 2028
-
Cu contact on NiSi substrate with a Ta/TaN barrier stackZhou, Mi / Zhao, Ying / Huang, Wei / Wang, Bao-Min / Ru, Guo-Ping / Jiang, Yu-Long / Liu, Ran / Qu, Xin-Ping et al. | 2008
- 2032
-
Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectricWang, Bao-Min / Ru, Guo-Ping / Jiang, Yu-Long / Qu, Xin-Ping / Li, Bing-Zong / Liu, Ran et al. | 2008
- 2037
-
Interface optimization for poly silicon/tungsten gatesSchmidbauer, Sven / Hahn, Jens / Buerke, Axel / Jakubowski, Frank / Storbeck, Olaf / Ting, Yu-Wei / Schuster, Thomas / Faul, Jürgen et al. | 2008
- 2042
-
Extensive investigations of temperature influence on barrier integrity during reliability testingAubel, O. / Meyer, M.A. / Feustel, F. / Engelmann, H.J. / Zienert, I. / Poppe, J. / Schmidt, H. / Gehre, D. / Geisler, H. / Langer, E. et al. | 2008
- 2047
-
Screening self-assembled monolayers as Cu diffusion barriersMaestre Caro, A. / Maes, G. / Borghs, G. / Whelan, C.M. et al. | 2008
- 2051
-
Physical investigation of the impact of electrolessly deposited self-aligned caps on insulation of copper interconnectsOlivier, S. / Decorps, T. / Bernard, M. / Haumesser, P.H. / Passemard, G. et al. | 2008
- 2055
-
TEM investigation of Ti and Ti/Al bilayer as alternative diffusion barriers for Cu metallization for SAW device applicationsSpindler, M. / Menzel, S.B. / Eggs, C. / Thomas, J. / Gemming, T. / Eckert, J. et al. | 2008
- 2059
-
Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasmaXie, Qi / Musschoot, Jan / Detavernier, Christophe / Deduytsche, Davy / Meirhaeghe, Roland L Van / Berghe, Sven Van den / Jiang, Yu-Long / Ru, Guo-Ping / Li, Bing-Zong / Qu, Xin-Ping et al. | 2008
- 2064
-
Effect of wet chemical substrate pretreatment on the growth behavior of Ta(N) films deposited by thermal ALDStrehle, S. / Schumacher, H. / Schmidt, D. / Knaut, M. / Albert, M. / Bartha, J.W. et al. | 2008
- 2068
-
XPS studies of the ALD-growth of TaN diffusion barriers: Impact of the dielectric surface chemistry on the growth mechanismVolpi, F. / Cadix, L. / Berthomé, G. / Blanquet, E. / Jourdan, N. / Torres, J. et al. | 2008
- 2071
-
Air gap formation by UV-assisted decomposition of CVD materialPantouvaki, M. / Humbert, A. / VanBesien, E. / Camerotto, E. / Travaly, Y. / Richard, O. / Willegems, M. / Volders, H. / Kellens, K. / Daamen, R. et al. | 2008
- 2075
-
Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localizationVilmay, M. / Roy, D. / Volpi, F. / Chaix, J.-M. et al. | 2008
- 2079
-
Cracking energy estimation of ultra low-k package using novel prediction approach combined with global–local modeling techniqueLee, Chang-Chun / Chou, Tsung-Lin / Chiu, Chien-Chia / Hsia, Chin-Chiu / Chiang, Kuo-Ning et al. | 2008
- 2085
-
Phosphorous doped SOG as a pre-metal-dielectric for sub-50nm technology nodesDas, Arabinda / Stavrev, Momtchil / Prenz, Heike / Schardin, Markus / Uhlig, Ines / Graf, Werner / Sperlich, Hans-Peter et al. | 2008
- 2089
-
Study of solvent penetration inside a porous low k material by neutron reflectometry – Influence of material surface modifications and of solvent propertiesRébiscoul, D. / Broussous, L. / Puyrenier, W. / Rouessac, V. / Ayral, A. / Cubitt, R. et al. | 2008
- 2094
-
Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengthsPrager, L. / Marsik, P. / Wennrich, L. / Baklanov, M.R. / Naumov, S. / Pistol, L. / Schneider, D. / Gerlach, J.W. / Verdonck, P. / Buchmeiser, M.R. et al. | 2008
- 2098
-
Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyondChapelon, L.L. / Chaabouni, H. / Imbert, G. / Brun, P. / Mellier, M. / Hamioud, K. / Vilmay, M. / Farcy, A. / Torres, J. et al. | 2008
- 2102
-
Porosity generation using hydrogen plasma assisted thermal curing for ultra low k materialZenasni, A. / Jousseaume, V. / Gourhant, O. / Favennec, L. / Maury, P. et al. | 2008
- 2105
-
Weight-scale, XRR and corona charge method on back-end dielectrics for 65 and 45nm technology nodesFossati, D. / Duru, R. / Desmercières, S. / Royer, J.-C. et al. | 2008
- 2107
-
Evaluation of plasma damage in ultra-low-k materials with cap film using “extracted k-value” methodTakahashi, Hyoh / Takimoto, Yoshio / Masuda, Makoto / Ando, Yoshito et al. | 2008
- 2111
-
Optical, electrical and structural properties of spin-on MSQ low-k dielectrics over a wide temperature rangeAhner, N. / Schulz, S.E. / Blaschta, F. / Rennau, M. et al. | 2008
- 2114
-
Influence of NH3 plasma treatment on chemical bonding and water adsorption of low-k SiCOH filmGuo, Hao-Wen / Zhu, Lian / Zhang, Lei / Ding, Shi-Jin / Zhang, David Wei / Liu, Ran et al. | 2008
- 2118
-
Structure analysis and property improvements of the computer-simulated fullerene-based ultralow-k dielectricsZagorodniy, K. / Hermann, H. / Taut, M. / Seifert, G. / Zschech, E. et al. | 2008
- 2123
-
How to improve intrinsic and extrinsic reliability of vias by process optimizationPenka, Sabine / Schulte, Susanne / Czekalla, Markus / Kriz, Jakob / Hommel, Martina et al. | 2008
- 2128
-
Overview of dual damascene integration schemes in Cu BEOL integrationKriz, J. / Angelkort, C. / Czekalla, M. / Huth, S. / Meinhold, D. / Pohl, A. / Schulte, S. / Thamm, A. / Wallace, S. et al. | 2008
- 2133
-
Cu grain growth in interconnects trenches – Experimental characterization of the overburden effectCarreau, V. / Maitrejean, S. / Brechet, Y. / Verdier, M. / Bouchu, D. / Passemard, G. et al. | 2008
- 2137
-
Impact of Al in Cu alloy interconnects on electro and stress migration reliabilitiesMaekawa, Kazuyoshi / Mori, Kenichi / Suzumura, Naohito / Honda, Kazuhito / Hirose, Yukinori / Asai, Koyu / Uedono, Akira / Kojima, Masayuki et al. | 2008
- 2142
-
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiCKuchuk, A.V. / Guziewicz, M. / Ratajczak, R. / Wzorek, M. / Kladko, V.P. / Piotrowska, A. et al. | 2008
- 2146
-
Post electrochemical Cu deposition anneal impact on stress-voiding in individual viasGregoire, M. / Juhel, M. / Vannier, P. / Normandon, P. et al. | 2008
- 2150
-
Analysis of Cu/Low-k structure under back end of line processChiu, C.C. / Lee, C.C. / Chou, T.L. / Hsia, C.C. / Chiang, K.N. et al. | 2008
- 2155
-
Nanotwin formation and its physical properties and effect on reliability of copper interconnectsXu, Di / Sriram, Vinay / Ozolins, Vidvuds / Yang, Jenn-Ming / Tu, K.N. / Stafford, Gery R. / Beauchamp, Carlos / Zienert, Inka / Geisler, Holm / Hofmann, Petra et al. | 2008
- 2159
-
New precursors for CVD copper metallizationNorman, John A.T. / Perez, Melanie / Schulz, Stefan E. / Waechtler, Thomas et al. | 2008
- 2164
-
Oxygen chemiluminescence in He plasma as a method for plasma damage evaluationUrbanowicz, A.M. / Shamiryan, D. / Baklanov, M.R. / De Gendt, S. et al. | 2008
- 2169
-
Chemical bonds in damaged and pristine low-κ materials: A comparative EELS studyStegmann, Heiko / Özdöl, V. Burak / Koch, Christoph / van Aken, Peter A. / Engelmann, Hans-Jürgen / Potapov, Pavel / Zschech, Ehrenfried et al. | 2008
- 2169
-
Chemical bonds in damaged and pristine low-k materials: A comparative EELS studyStegmann, H. / Ozdol, V. B. / Koch, C. / van Aken, P. A. / Engelmann, H. J. / Potapov, P. / Zschech, E. et al. | 2008
- 2172
-
Study of nano-mechanical properties for thin porous films through instrumented indentation: SiO2 low dielectric constant films as an exampleHerrmann, M. / Richter, F. / Schulz, S.E. et al. | 2008
- 2175
-
Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysisKaouache, B. / Labat, S. / Thomas, O. / Maitrejean, S. / Carreau, V. et al. | 2008
- 2179
-
Diffusional creep induced stress relaxation in thin Cu films on siliconChocyk, D. / Proszynski, A. / Gladyszewski, G. et al. | 2008
- 2183
-
A compact wide band filter based on the left handed material theoryHuang, C. / Chen, D. / Wei, W.J. / Jing, X.M. / Chen, X. / Liu, J.Q. / Zhu, J. / Wei, Z.Y. / Li, H.Q. et al. | 2008
- 2187
-
The possibility of polarization recovery in fatigued ferroelectric vinylidene fluoride and trifluoroethylene copolymer filmsZeng, ZhiGang / Zhu, GuoDong / Liu, Ran / Zhang, Qun / Yan, XueJian et al. | 2008
- IFC
-
Inside Front Cover - Editorial Board| 2008
- v
-
Table of Contents| 2008